FGA60N65SMD

FGA60N65SMD
650 V, 60 A Field Stop IGBT

Features
General Description
Maximum Junction Temperature : TJ =
175oC
Using novel field stop IGBT technology, Fairchilds new series of

field stop 2nd generation IGBTs offer the optimum performance
for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Positive Temperature Co-efficient for Easy Parallel Operating

High Current Capability
Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 60 A
Fast Switching : EOFF = 7.5 uJ/A
Tighten Parameter Distribution
RoHS Compliant
Applications
Solar Inverter, UPS, Welder, PFC, Telecom, ESS
TO-3PN
G CE
Absolute Maximum Ratings

Symbol
VCES
VGES
IC
ICM (1)
IF
IFM (1)
PD
TJ
Description
Ratings
Unit
Collector to Emitter Voltage
650
Gate to Emitter Voltage
20
30
120
Transient Gate to Emitter Voltage

Collector Current
@ TC = 25oC
Collector Current
@ TC = 100 C
Pulsed Collector Current

o
60
180
Diode Forward Current
@ TC = 25 C
60
Diode Forward Current
@ TC = 100oC
30
180
Maximum Power Dissipation
@ TC = 25oC
600
Maximum Power Dissipation
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Operating Junction Temperature
Tstg
Storage Temperature Range
TL
Maximum Lead Temp. for soldering

Purposes, 1/8 from case for 5 seconds
300
-55 to +175
-55 to +175
300
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
2011 Fairchild Semiconductor Corporation
FGA60N65SMD Rev. C2
www.fairchildsemi.com
FGA60N65SMD 650 V, 60 A Field Stop IGBT
October 2013
Symbol
Parameter
Typ.
Max.
Unit
o
RJC(IGBT)
Thermal Resistance, Junction to Case
0.25
RJC(Diode)
Thermal Resistance, Junction to Case
1.1
oC/W
C/W
RJA
Thermal Resistance, Junction to Ambient
40
oC/W
Package Marking and Ordering Information

Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGA60N65SMD
FGA60N65SMD
TO-3PN
30
Electrical Characteristics of the IGBT

Symbol
Parameter
TC = 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
650
V/oC
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A
BVCES
TJ
Temperature Coefficient of Breakdown

Voltage
VGE = 0V, IC = 250A
0.6
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
250
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
400
nA
IC = 250A, VCE = VGE
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage

Collector to Emitter Saturation Voltage
3.5
4.5
6.0
IC = 60A, VGE = 15V
1.9
2.5
IC = 60A, VGE = 15V,

TC = 175oC
2.1
2915
pF
270
pF
85
pF
18
27
ns
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,

f = 1MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
47
70
ns
td(off)
Turn-Off Delay Time
104
146
ns
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Ets
VCC = 400V, IC = 60A,

RG = 3, VGE = 15V,
Inductive Load, TC = 25oC
50
68
ns
1.54
2.31
mJ
Turn-Off Switching Loss
0.45
0.60
mJ
Total Switching Loss
1.99
2.91
mJ
td(on)
Turn-On Delay Time
18
ns
tr
Rise Time
41
ns
td(off)
Turn-Off Delay Time
115
ns
tf
Fall Time
48
ns
VCC = 400V, IC = 60A,

RG = 3, VGE = 15V,
Inductive Load, TC = 175oC
Eon
Turn-On Switching Loss
2.08
mJ
Eoff
Turn-Off Switching Loss
0.78
mJ
Ets
Total Switching Loss
2.86
mJ
FGA60N65SMD Rev. C2
Thermal Characteristics
Symbol
Qg
Parameter
(Continued)
Test Conditions
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
VCE = 400V, IC = 60A,

VGE = 15V
Electrical Characteristics of the Diode

Symbol
Parameter
VFM
Diode Forward Voltage
Erec
Reverse Recovery Energy
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
FGA60N65SMD Rev. C2
Min.
Typ.
Max
Unit
189
284
nC
20
30
nC
91
137
nC
Unit
TC = 25C unless otherwise noted
Test Conditions
IF = 30A
IF =30A,
dIF/dt = 200A/s
Min.
Typ.
Max
TC = 25oC
2.1
2.6
TC = 175oC
1.7
TC = 175oC
127
25oC
47
TC = 175oC
212
TC = 25oC
87
TC = 175oC
933
TC =
V
uJ
ns
nC
Electrical Characteristics of the IGBT
Figure 1. Typical Output Characteristics

180
20V
15V
TC = 25 C
180
TC = 175 C
Collector Current, IC [A]
90
60
VGE = 8V
90
VGE = 8V
60
30
0
0
2
4
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage

Characteristics
2
4
Figure 4. Saturation Voltage vs. Case

Temperature at Variant Current Level
3.5
180
Common Emitter
VGE = 15V
150
10V
120
30
TC = 25 C
o
TC = 175 C
120
90
60
30
1
2
3
4
Common Emitter
VGE = 15V
3.0
120A
2.5
60A
2.0
IC = 30A
1.5
1.0
25
0
5
Figure 5. Saturation Voltage vs. VGE
50
75
100
125
150
o
Case Temperature, TC [ C]
175
Figure 6. Saturation Voltage vs. VGE

20
20
Common Emitter
Common Emitter
T C = 25 C
16
12
8
60A
120A
4
IC = 30A
12V
150
10V
120
20V
15V
12V
150
Figure 2. Typical Output Characteristics
TC = 175 C
16
12
8
60A
IC = 30A
8
12
16
Gate-Emitter Voltage, V GE [V]
FGA60N65SMD Rev. C2
20
120A
8
12
16
Gate-Emitter Voltage, VGE [V]
20
Typical Performance Characteristics

Figure 7. Capacitance Characteristics
Figure 8. Gate charge Characteristics
7000
15
Common Emitter
Common Emitter
VGE = 0V, f = 1MHz
Gate-Emitter Voltage, VGE [V]
6000
TC = 25 C
Capacitance [pF]
5000
4000
Cies
3000
2000
Coes
1000
TC = 25 C
12
VCC = 200V
300V
9
400V
Cres
0
0.1
1
10
0
0
30
Figure 9. Turn-on Characteristics vs.

Gate Resistance
40
200
Figure 9. Turn-off Characteristics vs.

Gate Resistance
6000
100
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
80
tr
60
Switching Time [ns]
Switching Time [ns]
80
120
160
Gate Charge, Qg [nC]
40
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
20
1000 TC = 25 C
o
TC = 175 C
td(off)
100
tf
TC = 25 C
o
TC = 175 C
10
0
10
20
30
40
Gate Resistance, RG []
10
50
Figure 11. Switching Loss vs.

Gate Resistance
10
20
30
40
50
Figure 12. Turn-on Characteristics vs.

Collector Current
1000
10
Common Emitter
VGE = 15V, RG = 3
Switching Time [ns]
Switching Loss [mJ]
TC = 25 C
Eon
Eoff
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 175 C
100
tr
td(on)
10
TC = 25 C
o
TC = 175 C
0.1
10
20
30
40
FGA60N65SMD Rev. C2
1
0
50
30
60
90
120
Figure 13. Turn-off Characteristics vs.

Collector Current
Figure 14. Switching Loss vs..

Collector Current
10
1000
Eon
Switching Loss [mJ]
Switching Time [ns]
td(off)
100
tf
10
Common Emitter
VGE = 15V, RG = 3
1
Eoff
0.1
Common Emitter
VGE = 15V, RG = 3
o
TC = 25 C
TC = 25 C
TC = 175 C
TC = 175 C
0.01
1
0
30
60
90
120
30
Figure 15. Load Current Vs. Frequency

120
Collector Current, Ic [A]
Tc = 100 C
10s
100
120
300
Tc = 100 C
Power Dissipation
: 300W
80
90
Figure 16. SOA Characteristics
Vcc = 400 V
Load Current
: peak of square wave
Duty cycle : 50%
100
60
60
40
10
DC
100s
1ms
10 ms
*Notes:
0.1
1. TC = 25 C
20
0
1k
2. TJ = 175 C
3. Single Pulse
0.01
10k
100k
Switching Frequency, f [Hz]
1M
Figure 17. Forward Characteristics
10
100
1000
Figure 18. Reverse Recovery Current
200
14
100
12
Reverse Recovery Current, Irr [A]
Forward Current, IF [A]
TC = 175 C
o
TC = 125 C
o
TC = 75 C
10
o
TC = 175 C
o
TC = 125 C
o
TC = 25 C
TC = 75 C
o
TC = 25 C
1
2
3
Forward Voltage, VF [V]
FGA60N65SMD Rev. C2
TC = 175 C
10
8
6
di/dt = 200A/uS
di/dt =100A/uS
2
0
TC = 25 C
10
20
30
40
Figure 19. Reverse Recovery Time
Figure 20. Stored Charge
400
1400
o
Stored Recovery Charge, Qrr [nC]
Reverse Recovery Time, trr [ns]
TC = 25 C
o
TC = 175 C
300
200
didt =100A/uS
didt = 200A/uS
50
15
30
45
TC = 175 C
1000
800
600
didt =100A/uS
400
didt = 200A/uS
200
0
60
TC = 25 C
1200
10
20
30
40
50
60
Figure 21.Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
0.5
0.5
0.1
0.2
0.1
0.05
0.02
0.01
0.01
PDM
t1
single pulse
t2
Duty Factor, D = t1/t2

Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5
1E-4
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
Figure 22.Transient Thermal Impedance of Diode
Thermal Response [Zthjc]
3
1
0.5
0.2
0.1
0.1
0.05
PDM
0.02
0.01
single pulse
t1
t2
Duty Factor, D = t1/t2

Peak Tj = Pdm x Zthjc + TC
0.01
0.005
1E-5
1E-4
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
FGA60N65SMD Rev. C2
Mechanical Dimensions
Figure 20. TO-3P 3L - 3LD, T03, PLASTIC, EIAJ SC-65
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3P0-003
Dimensions in Millimeters
FGA60N65SMD Rev. C2
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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2.
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Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.
Rev. I66
FGA60N65SMD Rev. C2
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FGA60N65SMD

650 V, 60 A Field Stop IGBT

Maximum Junction Temperature : TJ =

Using novel field stop IGBT technology, Fairchilds new series of

Positive Temperature Co-efficient for Easy Parallel Operating

Absolute Maximum Ratings

Collector to Emitter Voltage

Gate to Emitter Voltage

Transient Gate to Emitter Voltage

Pulsed Collector Current

Diode Forward Current

Diode Forward Current

Maximum Power Dissipation

Maximum Power Dissipation

Pulsed Diode Maximum Forward Current

Operating Junction Temperature

Storage Temperature Range

Maximum Lead Temp. for soldering

2011 Fairchild Semiconductor Corporation

FGA60N65SMD 650 V, 60 A Field Stop IGBT

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Package Marking and Ordering Information

Electrical Characteristics of the IGBT

TC = 25C unless otherwise noted

Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A

Temperature Coefficient of Breakdown

VGE = 0V, IC = 250A

Collector Cut-Off Current

VCE = VCES, VGE = 0V

G-E Leakage Current

VGE = VGES, VCE = 0V

IC = 250A, VCE = VGE

G-E Threshold Voltage

IC = 60A, VGE = 15V

IC = 60A, VGE = 15V,

Reverse Transfer Capacitance

VCE = 30V, VGE = 0V,

Turn-On Delay Time

Turn-Off Delay Time

Turn-On Switching Loss

VCC = 400V, IC = 60A,

Turn-Off Switching Loss

Total Switching Loss

Turn-On Delay Time

Turn-Off Delay Time

VCC = 400V, IC = 60A,

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

2011 Fairchild Semiconductor Corporation

FGA60N65SMD 650 V, 60 A Field Stop IGBT

Total Gate Charge

Gate to Emitter Charge

Gate to Collector Charge

VCE = 400V, IC = 60A,

Electrical Characteristics of the Diode

Diode Forward Voltage

Reverse Recovery Energy

Diode Reverse Recovery Time

Diode Reverse Recovery Charge

2011 Fairchild Semiconductor Corporation

TC = 25C unless otherwise noted