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Photodiode is basically a light detector semiconductor device, which converts the light
energy into current or voltage depends upon the mode of operation. It has built in
optical filter, lenses and may have a large or small area of surface, when light falls on this
surface, then this produce a current.when there is no any light falls on this surface then it
also gives a small amount of current. The current, which produce this device is directly
proportional to the light falls on the surface of the photodiode but as we increase the
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surface area then it response time to produce current becomes low. The schematic
symbol is shown in figure below:
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According to the figure above it is formed by the diffusion of lightly doped p type impurity
into the heavily doped n type impurity and the area between the p type impurity and n type
impurity is called depletion region. The contact pads are deployed at n type area called
cathode and p type area called anode. In this figure some portion of the front area is
called active area which is coated with anti-refection material to reduce the reflection of
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light and rest of the area is called non-active area which is coated with thick layer of
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silicon dioxide(Sio2). The responsivity and speed of photodiode to convert the light into
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current can controlled by the controlling the thickness area of this non-active area. The
photo diode is operated in reverse bias mode means negative voltage is applied at anode
and positive voltage is applied at cathode
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Photodiode is made of silicon semiconductor material which heave the energy gap 1.12 eV
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at room temperature. This gap is actually between valance band and conduction band and
at zero room temperature, the valance band is completely filled with the negative or
positive ions, similarly, the conduction band is completely vacant means there is no any
negative or positive ions. As we increase the temperature, the electrons in valance band
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become excited and move from valance band to conduction and these electrons are called
free electron. These free electrons are free to conduct the current. When the p type and n
type material formed a junction then a concentration gradient becomes. Due to this
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concentration gradient, the diffusion of holes from p type material region and electron
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from n type material region develop a voltage across the junction and due to this inter
diffusion depletion region is also formed. The voltage across this depletion region
produced electric field. When we connect the photodiode in reverse bias mode then the
width of this depletion region is increased slowly, eventually this region has breakdown
and flow of current start from anode to cathode. This current depends upon the incident
of light at the surface.
Avalanche Diode Mode: This mode is used in high reverse biased condition and
photodiode works in avalanche breakdown region. In this mode the internal gain and
responsivity of the device has increased.
Types of Photodiodes
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Applications of Photodiode
1. They are used in photoconductor, photomultiplier tubes and charged coupled devices
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to generate the output signal which depends upon the light illumination
2. they are used in electronics device such as smoke detector, compact disk players
and infrared remote controls which are used for on the television, LCD and other
devices.
3. they are used in science and industry for accurate measurement of light intensity
and shows more linear behavior than photoconductor.
4. They are widely used in medical equipments for computing the tomography.
5. PIN photodiodes are more sensitive and faster than the PN photodiodes therefore
these are used for light regulation and optical communication
6. These are also used in cameras, safety equipment, position sensors, bar code
sensors, automotive devices and surveying instruments.
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