Power Transistor: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS™

SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185

Cool MOS Power Transistor
VDS @ Tjmax
650
RDS(on)
0.38
ID
11
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
PG-TO220FP
PG-TO262
PG-TO220
Extreme dv/dt rated

High peak current capability
Improved transconductance
P-TO220-3-31
PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
Type
Package
Ordering Code
Marking
SPP11N60C3
PG-TO220
Q67040-S4395
11N60C3
SPI11N60C3
PG-TO262
Q67042-S4403
11N60C3
Q67040-S4408
11N60C3
SPA11N60C3
PG-TO220FP
11N60C3
SPA11N60C3E8185 PG-TO220
Maximum Ratings
Parameter
Symbol
Value
SPA
SPP_I
Continuous drain current
Unit
ID
TC = 25 C
11
11 1)
TC = 100 C
71)
33
33
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
340
340
EAR
0.6
0.6
Avalanche current, repetitive tAR limited by Tjmax
IAR
11
11
Gate source voltage static
VGS
20
20
Gate source voltage AC (f >1Hz)
VGS
30
30
Power dissipation, TC = 25C
Ptot
125
33
Operating and storage temperature
Tj , Tstg
Reverse diode dv/dt 7)
dv/dt
A
mJ
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)

ID=11A, VDD=50V
Rev.
3.2
Page 1
-55...+150
15
W
C
V/ns
2009-11-27
SPP11N60C3
Maximum Ratings
Parameter
Symbol
Drain Source voltage slope
dv/dt
Value
Unit
50
V/ns
Values
Unit
VDS = 480 V, ID = 11 A, Tj = 125 C
Thermal Characteristics
Symbol
Parameter
min.
typ.
max.
Thermal resistance, junction - case
RthJC
Thermal resistance, junction - case, FullPAK
RthJC_FP
3.8
Thermal resistance, junction - ambient, leaded
RthJA
62
Thermal resistance, junction - ambient, FullPAK
RthJA_FP
80
SMD version, device on PCB:
RthJA
@ min. footprint
62
@ 6 cm 2 cooling area 3)
35
260
Soldering temperature, wavesoldering
Tsold
K/W
1.6 mm (0.063 in.) from case for 10s 4)

Electrical Characteristics, at Tj=25C unless otherwise specified
Parameter
Symbol
Conditions
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA

Drain-Source avalanche
V(BR)DS VGS=0V, ID=11A
Values
Unit
min.
typ.
max.
600
700
2.1
3.9
breakdown voltage
Gate threshold voltage
VGS(th)
ID=500A, VGS =VDS
Zero gate voltage drain current
I DSS
VDS=600V, V GS=0V,
Gate-source leakage current
I GSS
Drain-source on-state resistance RDS(on)
Gate input resistance
Rev.
3.2
RG
Tj=25C
0.1
Tj=150C
100
VGS=30V, V DS=0V
100
VGS=10V, ID=7A
Tj=25C
0.34
0.38
Tj=150C
0.92
f=1MHz, open drain
0.86
Page 2
nA
2009-11-27
SPP11N60C3
Electrical Characteristics
Parameter
Transconductance
Symbol
gfs
Conditions
VDS2*ID*R DS(on)max,
Values
Unit
min.
typ.
max.
8.3
S
pF
ID=7A
Input capacitance
Ciss
VGS=0V, VDS=25V,
1200
Output capacitance
Coss
f=1MHz
390
Reverse transfer capacitance
Crss
30
45
85
Effective output capacitance,5) Co(er)

energy related
VGS=0V,
VDS=0V to 480V
Effective output capacitance,6) Co(tr)

time related
Turn-on delay time
td(on)
VDD=380V, VGS=0/10V,
10
Rise time
tr
ID=11A,
Turn-off delay time
td(off)
RG =6.8
44
70
Fall time
tf
5.5
22
45
60
5.5
ns
Gate Charge Characteristics

Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
VDD=480V, ID=11A
VDD=480V, ID=11A,
nC
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=480V, ID=11A
1Limited only by maximum temperature

2Repetitve avalanche causes additional power losses that can be calculated as P =E *f.
AR
AV
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
4Soldering temperature for TO-263: 220C, reflow
5C
o(er)
is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
6C
o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V DSS.
7ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.
Identical low-side and high-side switch.
Rev.
3 .2
Page 3
2009-11-27
SPP11N60C3
Electrical Characteristics
Symbol
Parameter
Inverse diode continuous
IS
Conditions
Values
Unit
min.
typ.
max.
11
33
TC=25C
forward current
Inverse diode direct current,
I SM
pulsed
Inverse diode forward voltage
VSD
VGS =0V, IF=IS
1.2
Reverse recovery time
t rr
VR =480V, IF =IS ,
400
600
ns
Reverse recovery charge
Q rr
diF/dt=100A/s
Peak reverse recovery current
I rrm
41
Peak rate of fall of reverse
dirr /dt
1200
A/s
Tj=25C
recovery current
Typical Transient Thermal Characteristics
Symbol
Value
Unit
SPP_I
SPA
Rth1
0.015
0.15
Rth2
0.03
Rth3
Symbol
Value
Unit
SPP_I
SPA
Cth1
0.0001878
0.0001878
0.03
Cth2
0.0007106
0.0007106
0.056
0.056
Cth3
0.000988
0.000988
Rth4
0.197
0.194
Cth4
0.002791
0.002791
Rth5
0.216
0.413
Cth5
0.007285
0.007401
Rth6
0.083
2.522
Cth6
0.063
0.412
Tj
K/W
R th1
R th,n
T case
Ws/K
E xternal H eatsink
P tot (t)
C th1
C th2
C th,n
T am b
Rev
. 3.2
Page 4
2009-11-27
SPP11N60C3
1 Power dissipation
2 Power dissipation FullPAK
Ptot = f (TC)
Ptot = f (TC)
SPP11N60C3
35
140
W
120
110
25
Ptot
Ptot
100
90
20
80
70
15
60
50
10
40
30
20
10
0
0
20
40
60
80
100
120
0
0
160
20
40
60
80
100
120
TC
3 Safe operating area
4 Safe operating area FullPAK
ID = f ( VDS )
ID = f (VDS)
parameter : D = 0 , TC=25C
parameter: D = 0, TC = 25C
10
C 160
TC
10 2
10 1
10 1
ID
ID
10 0
10 -1
10 0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
10 -2 0
10
Rev.
10
3 .2
10 -1
10
10
V
VDS
10 -2 0
10
Page 5
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
10
10
10
V
VDS
2009-11-27
2SPP11N60C3

5 Transient thermal impedance
6 Transient thermal impedance FullPAK
ZthJC = f (tp)
ZthJC = f (tp)
parameter: D = tp/T
parameter: D = tp/t
10
10 1
K/W
K/W
10 0
ZthJC
ZthJC
10 0
10 -1
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10 -2
10 -3
10 -4 -7
10
10
-6
10
-5
10
-4
10
-3
s
tp
10 -1
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10 -2
10 -3
10
10 -4 -7
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
10
-1
tp
7 Typ. output characteristic
8 Typ. output characteristic
ID = f (VDS); Tj =25C
ID = f (VDS); Tj =150C
parameter: tp = 10 s, VGS
parameter: tp = 10 s, VGS
40
22
20V
10V
8V
20V
8V
7V
7.5V
32
18
7V
6V
16
6,5V
24
ID
28
ID
1
s 10
14
5.5V
12
20
6V
10
16
5V
8
5,5V
12
6
4.5V
8
4
0
0
Rev. 3 .2
12
15
18
21
5V
4,5V
4V
0
0
27
V
VDS
10
15
25
V
VDS
Page 6
2007-08-30
SPP11N60C3
9 Typ. drain-source on resistance
10 Drain-source on-state resistance
RDS(on)=f(ID)
RDS(on) = f (Tj)
parameter: Tj=150C, VGS
parameter : ID = 7 A, VGS = 10 V
2.1
SPP11N60C3
1.8
4.5V
5V
6V
5.5V
1.6
RDS(on)
RDS(on)
4V
1.4
1.6
1.4
1.2
1.2
1
0.8
0.6
0.8
98%
6.5V
8V
20V
0.6
0.4
0
0.4
10
12
typ
0.2
14
16
A
ID
0
-60
20
-20
20
60
100
180
Tj
11 Typ. transfer characteristics
12 Typ. gate charge
ID = f ( VGS ); VDS 2 x ID x RDS(on)max
VGS = f (Q Gate)
parameter: ID = 11 A pulsed
parameter: tp = 10 s
40
16
SPP11N60C3
25C
32
12
24
VGS
ID
28
150C
20
0,2 VDS max
10
0,8 VDS max
16
12
4
8
2
4
0
0
Rev.
3.2
10
12
0
0
V 15
VGS
10
20
30
40
50
nC
70
QGate
Page 7
2009-11-27
SPP11N60C3
13 Forward characteristics of body diode
14 Typ. switching time
IF = f (VSD)
t = f (ID), inductive load, Tj =125C
parameter: Tj , tp = 10 s
par.: VDS =380V, VGS=0/+13V, RG=6.8
2 SPP11N60C3
10
70
ns
A
60
td(off)
55
50
10 1
IF
45
40
35
30
25
10 0
Tj = 25 C typ
20
Tj = 150 C typ
15
Tj = 25 C (98%)
10
Tj = 150 C (98%)
10
-1
0.4
0.8
1.2
1.6
2.4 V
tf
td(on)
tr
0
0
12
A
ID
VSD
15 Typ. switching time
16 Typ. drain current slope
t = f (RG ), inductive load, Tj =125C
di/dt = f(RG ), inductive load, Tj = 125C
par.: VDS =380V, VGS=0/+13V, ID=11 A
par.: VDS =380V, VGS=0/+13V, ID=11A
350
3000
ns
A/s
di/dt
250
2000
200
td(off)
td(on)
tr
tf
150
1500
1000
100
di/dt(off)
500
50
0
0
10
20
30
40
50
0
0
70
RG
Rev.
3 .2
di/dt(on)
20
40
60
80
120
RG
Page 8
2009-11-27
SPP11N60C3
17 Typ. drain source voltage slope
18 Typ. switching losses
dv/dt = f(RG), inductive load, Tj = 125C
E = f (ID), inductive load, Tj=125C
par.: VDS =380V, VGS=0/+13V, RG=6.8
140
0.04
V/ns
mWs
120
*) Eon includes SPD06S60 diode

commutation losses
dv/dt(off)
110
0.03
dv/dt
100
90
0.025
80
0.02
70
60
0.015
50
40
Eon*
0.01
dv/dt(on)
30
0.005
Eoff
20
10
0
10
20
30
40
50
0
0
70
ID
RG
19 Typ. switching losses
20 Avalanche SOA
E = f(RG), inductive load, T j=125C
IAR = f (tAR)
par.: Tj 150 C
0.24
12
11
*) Eon includes SPD06S60 diode

commutation losses
mWs
9
8
0.16
IAR
Eoff
7
6
0.12
5
T j(START)=25C
0.08
Eon*
T j(START)=125C
0.04
1
0
0
10
20
30
40
50
70
0 -3
10
RG
Rev
. 3 .2
Page 9
10
-2
10
-1
10
10
10
4
s 10
tAR
2009-11-27
SPP11N60C3
21 Avalanche energy
22 Drain-source breakdown voltage
EAS = f (Tj)
V(BR)DSS = f (Tj)
par.: ID = 5.5 A, VDD = 50 V

SPP11N60C3
350
720
V(BR)DSS
mJ
EAS
250
200
680
660
640
620
150
600
100
580
50
560
0
20
40
60
80
100
120
540
-60
160
-20
20
60
100
180
Tj
Tj
23 Avalanche power losses
24 Typ. capacitances
PAR = f (f )
C = f (VDS)
parameter: EAR =0.6mJ
parameter: VGS =0V, f=1 MHz

10 4
300
pF
W
Ciss
200
P AR
10 3
10 2
150
Coss
100
10 1
Crss
10 0
0
100
50
0 4
10
10
10
Hz
3 .2
300
400
600
VDS
Rev.
200
Page 10
2009-11-27
SPP11N60C3
25 Typ. Coss stored energy
Eoss=f(VDS)
7.5
Eoss
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
100
200
300
400
600
VDS
Definition of diodes switching characteristics
Rev
. 3 .2
Page 11
2009-11-27
SPP11N60C3
PG-TO-220-3-1, PG-TO-220-3-21
Rev. 3.2
Page 12
2009-11-27
SPP11N60C3
PG-TO-220-3-31/3-111: Outline/ Fully isolated package (2500VAC; 1 minute).
Rev. 3.2
Page 13
2009-11-27
SPP11N60C3
PG-TO-262-3-1 (I-PAK)
Rev. 3.2
Page 14
2009-11-27
SPP11N60C3
PG-TO220-3-36:Outline fully isolated package (2500VAC; 1 minute)
Rev. 3.2
Page 15
2009-11-27
SPP11N60C3
Published by
Infineon Technologies AG
81726 Munich, Germany
2007 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev.
3.2
Page 16
2009-11-27

Power Transistor: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS™

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Power Transistor: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS™

Încărcat de

Drepturi de autor:

Formate disponibile

SPP11N60C3

SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185

Extreme dv/dt rated

PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)

Pulsed drain current, tp limited by Tjmax

Avalanche energy, single pulse

Avalanche current, repetitive tAR limited by Tjmax

Gate source voltage static

Gate source voltage AC (f >1Hz)

Power dissipation, TC = 25C

Operating and storage temperature

Reverse diode dv/dt 7)

Avalanche energy, repetitive tAR limited by Tjmax2)

Drain Source voltage slope

VDS = 480 V, ID = 11 A, Tj = 125 C

Thermal resistance, junction - case

Thermal resistance, junction - case, FullPAK

Thermal resistance, junction - ambient, leaded

Thermal resistance, junction - ambient, FullPAK

SMD version, device on PCB:

Soldering temperature, wavesoldering

1.6 mm (0.063 in.) from case for 10s 4)

Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA

V(BR)DS VGS=0V, ID=11A

ID=500A, VGS =VDS

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance RDS(on)

Gate input resistance

f=1MHz, open drain

Reverse transfer capacitance

Effective output capacitance,5) Co(er)

Effective output capacitance,6) Co(tr)

Turn-off delay time

Gate Charge Characteristics

Gate to drain charge

Gate charge total

Gate plateau voltage

V(plateau) VDD=480V, ID=11A

1Limited only by maximum temperature

VGS =0V, IF=IS

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

Peak rate of fall of reverse

2 Power dissipation FullPAK

3 Safe operating area

4 Safe operating area FullPAK

SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185

6 Transient thermal impedance FullPAK

7 Typ. output characteristic

8 Typ. output characteristic

10 Drain-source on-state resistance

parameter: Tj=150C, VGS

11 Typ. transfer characteristics

12 Typ. gate charge

ID = f ( VGS ); VDS 2 x ID x RDS(on)max

0,2 VDS max

0,8 VDS max

14 Typ. switching time

t = f (ID), inductive load, Tj =125C

par.: VDS =380V, VGS=0/+13V, RG=6.8

15 Typ. switching time