ENGINEERING PHYSICS IMPOTRANT QUESTIONS 2013-2014:

UNIT-I
1) Explain bonding in solids and explain the types of bonding in solid?
2) Define cohesive energy. Derive an equation for cohesive energy for a
diatomic molecule?
3) Define the following
a) Unit cell
b) Space lattice
c) Lattice parameter
d) Atomic radius
e) Co-ordinate number
f) Packing factor
g) Define and explain bravias lattices with crystal systems.
4) Explain the following structure
a) Simple cubic
b) Body centered cubic
c) Face centered cubic
d) Diamond
e) Nacl
5) a) Explain the crystal planes and directions with miller indices?
b) Derive an equation for interplanar spacing or orthogonal crystal system?
6) Derive Braggs law. Explain lave method and powder method?
7) Explain the defects in crystals. Explain Berger vector?
UNIT -2
1)Explain dual nature ,deg-broglie hypothesis &matter waves
2)Explain construction of davission's and germer experiment.Explain Heisenberg
Uncertainity principle
3)Derive the expressions for the following
a)Schrodinger wave independent equation b)Physical significance of '?'
c)Particle in 1-D BOx d)Density of energy states
4)Define the folowing:
a)Phase space b)Ensembles
5) Distuingish between 3 Distribution functions
6)Derive the eq'ns for the following
a)Fermi energy level at different temp's b)Bloch theorem
c)Kronig penny model d)Effective mass of electron with E (v/s) K Diagrams
7)Classification of materials into 3 types &explian with BRILLIAN ZONES.
UNIT-III
1) Define the following
a) Electric dipole
b) Dipole movement
c) Dielectric constant
d) Polarisability
e) Susceptibility
f) Displacement vector
2) Derive the following equations
a) Internal fields in solids (or) Lorentz method (or) Local fields in solids
(or) clasius-mosotti equation.
b) Expression for four polarization process.
3) Explain the following
a) Permeability
b) Field intensity
c) Magnetic induction (B)
d) Magnetization
e) Susceptibility
4) Explain piezo and Ferro electricity?
5) Explain origin of magnetic movement with Bohr magneton?

6) Explain the classification of Dia, para, Ferro, Ferri, antiferro on the

basis of magnetic movement?
7) Explain the following
a) Domain of ferro magnetism
b) Hysterisis curve
c) Hard and soft materials
d) Superconductivity
e) Meissner effect
f) Type-I and Type-II superconductors
g) Applications of superconductors.
Unit 4
1) Derive the following:
(a) Interference in thin films.
(b) Newton's rings experiment.
2) Give an expression for Fraunhoffer Diffraction due to single slit and 'n'
slits.
3) Diffraction grating experiment.
4) Explain the construction and working of Nicol's prism.
5) Explain the following:
(a) characteristics of LASERS.
(b) Distinguish b/w Spontaneous and stimulated emission.
(c) Population Inversion.
(d) Lasing action.
(e) Applications of LASERS.
6) Give an expression for Einstein coefficients and their relations.
7) Explain the construction and working of the following:
(a) Ruby LASER.
(b) He-Ne LASER.
(c) Hetero and Homo semiconductor LASERS.
8) What is FIBRE? Explain principle in optical fibre and their applications.
9) Explain construction of a fibre. Give an expression for Acceptance angle,
cone and Numerical aperture.
10) Explain the types of fibres and optical fibres in Communication systems.
UNIT-5
1.Distinguish between intrinsic and extrinsic semicondutors.
2.Derive an expression for the density of holes in the valence band of an
intrinsic Semiconductor
3.Derive an expression for density of electrons in intrinsic semiconductors.
4.Derive an expression for carrier concentration of p-type semiconductors.
5.Explain Hall e?ect and its importance
6.Explain the variation of Fermi level with temperature in the case of ptypesemiconductors.
7.Explain the variation of Fermi level with i. Donor concentration ii.
Acceptor concentration, in the case of extrinsic
semiconductors.
8.What is Hall e?ect? Derive an expression for Hall coe?cient for p-type semiconductor.
9.Derive an expression for density of holes in intrinsic semiconductors
10.What is Hall e?ect? Derive an expression for Hall coe?cient for n-type
semiconductor.
11.Derive an expression for carrier concentration of n-type semiconductors.
12. Explain the variation of Fermi level with temperature in the case of ntypesemiconductors.
13.Derive an expression for density of electrons in intrinsic semiconductors.
14. Explain the variation of Fermi level with temperature in the case of ptypesemiconductors
15.Derive an expression for carrier concentration of n-type semiconductors.

Explain Hall e?ect and its importance.

Derive an expression for density of holes in intrinsic semiconductors[7+8]
[ SET-4]
Write notes on direct band gap and indirect band gap semiconductors
Show that the application of forward bias voltage across p-n junction causes
anexponential increase in number of
charge carriers in opposite regions.
Explain the origin of the internal potential barrier and hence derive the
relationfor contact potential.
Derive the current equation for reverse biased p-n junction
Draw and explain the energy band diagram for a p-n junction diode in
anunbiased condition. Write a detailed note on Photo Diodes.
1.What is acoustics? What are the requisites for good acoustics? Explain
2.Define reverberation and reverberation time.
3.What is reverberation time? Derive Sabines formula for the determination
of reverberation time.
4.What is the sound absorption coe?cient of a material? Explain
5.Describe a method to determine the sound absorption coe?cient of a material.
6.Discuss the factors which are a?ecting the architectural acoustics and
suggest your remedy
7.Describe the di?erent methods of acoustic quieting.
8.Describe various method to achieve soundproo?ng.
9.An auditorium has a volume of 5000 m3. What should be the total absorption
in
10.the auditorium if the reverberation time of 1.25 seconds is to be
maintained?
11.A hall has a volume of 1500 m3. Its total absorption is equivalent to 100
m2 ofopen window. What will be the e?ect
on the reverberation time, if the absorption
is increased by 100 m2 of open window, by ?lling the hall with audience.
1.Write about :
i. Origin of nanotechnology and ii. Surface to volume ratio of nanoparticle.
2.Write notes on: i. Origin of nanotechnology and ii. Nano-scale.
3.What is the meaning of nanotechnology? Explain.
4.Describe the process of sol-gel in the fabrication of nano- structures.
5.Describe any three processes by which nanomaterials are fabricated
6.Describe the top-down methods by which nanomaterials are fabricated.
7.Explain how X-ray di?raction can be used to characterize nanoparticles.
8.Describe the important applications of nanotechnology
9.Write the applications of nanotechnology in Electronic Industry.
10.Write the applications of nanotechnology in Industrial ?eld