Power Transistors

2SD2255
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB1493

Unit: mm
15.00.5

15.00.2

20.00.3

19.00.3

16.20.5

2.00.1

3.20.1

3.5

Optimum for 60W HiFi output

High foward current transfer ratio hFE: 5000 to 30000
Low collector to emitter saturation voltage VCE(sat): <2.5V

12.5

10.50.5

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4.00.1

4.00.1

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Features

4.50.2

13.00.5

(TC=25C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

VCBO

160

Collector to emitter voltage

VCEO

140

Emitter to base voltage

VEBO

Peak collector current

ICP

12

Collector current

IC

Collector power TC=25C

dissipation

70

PC

Ta=25C

Junction temperature

Tj

Storage temperature

Tstg

2.5

ICEO
IEBO

int

en

VCEO
hFE1

Ma

Forward current transfer ratio

hFE2*

Collector to emitter saturation voltage

VCE(sat)

Base to emitter saturation voltage

VBE(sat)

Transition frequency

fT

Turn-on time

ton

Storage time

tstg

Fall time

tf

FE2

Symbol

Collector to emitter voltage

*h

55 to +150

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Emitter cutoff current

5.450.3

0.60.2

10.90.5

1:Base
2:Collector
3:Emitter
EIAJ:SC65(a)
TOP3 Package(a)

Internal Connection

(TC=25C)

ICBO

an

Collector cutoff current

150

1.40.3

1.10.1

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Electrical Characteristics
Parameter

2.00.2

Solder Dip

Absolute Maximum Ratings

max

Unit

VCB = 160V, IE = 0

100

VCE = 140V, IB = 0

100

VEB = 5V, IC = 0

100

Conditions

min

IC = 30mA, IB = 0

140

VCE = 5V, IC = 1A

2000

VCE = 5V, IC = 6A

5000

typ

30000

IC = 6A, IB = 6mA

2.5

IC = 6A, IB = 6mA

VCE = 10V, IC = 0.5A, f = 1MHz

IC = 6A, IB1 = 6mA, IB2 = 6mA,
VCC = 50V

3.0

V
V

20

MHz

2.5

5.0

2.5

Rank classification

Rank
hFE2

5000 to 15000 8000 to 30000

Power Transistors

2SD2255

PC Ta

50
40

Base to emitter saturation voltage VBE(sat) (V)

60

VBE(sat) IC
100
TC=25C

10

Collector current IC (A)

(1) TC=Ta
(2) With a 100 100 2mm
Al heat sink
(3) Without heat sink
(PC=2.5W)

(1)

70

IC VCE
12

IB=5mA

1mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA

IC/IB=1000

30

10

3
TC=25C

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Collector power dissipation PC (W)

80

30
20

(2)

0.1mA

60

80 100 12 140 160

VCE(sat) IC

100

10

Forward current transfer ratio hFE

VCE=5V

10

30000

3000 TC=100C

TC=100C

1000

25C

25C

0.3

10

30

100

25C

300

30

10
0.01 0.03

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Collector current IC (A)

ton, tstg, tf IC

100

tf

Collector current IC (A)

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Ma

ton

0.3

10

Collector current IC (A)

1
0.3
0.1
0.03

Non repetitive pulse

TC=25C

ICP

10

t=1ms

10ms

IC

DC

3
1

0.3
0.1

0.03

0.01

0.01
0

12

Collector current IC (A)

16

10

30

100

Cob VCB

IE=0
f=1MHz
TC=25C

300

100

30

10

10

30

100

300

10

30

100

Collector to base voltage VCB (V)

Area of safe operation (ASO)

30

en

tstg

10

0.1

100

Pulsed tw=1ms
Duty cycle=1%
IC/IB=1000 (IB1=IB2)
VCC=50V
TC=25C

30

25C

100

ue

1000

10000

0.3

0.3

Collector current IC (A)

hFE IC

30

0.1
0.1

0.3

Collector to emitter voltage VCE (V)

100000

IC/IB=1000

100C

25C

0.1
0.1

12

Collector output capacitance Cob (pF)

40

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0

20

Ambient temperature Ta (C)

Collector to emitter saturation voltage VCE(sat) (V)

0.2mA

(3)

Switching time ton,tstg,tf (s)

0.3mA

10
0

1000

Collector to emitter voltage VCE (V)

103

102

101

Time t (s)

10

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0.1
104

Ma

Thermal resistance Rth(t) (C/W)

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Power Transistors
2SD2255

1000

Rth(t) t

Note: Rth was measured at Ta=25C and under natural convection.

(1) PT=10V 0.2A (2W) and without heat sink
(2) PT=10V 1.0A (10W) and with a 100 100 2mm Al heat sink

100
(1)

10
(2)

102

103

104

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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
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Consult our sales staff in advance for information on the following applications:
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
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