This product complies with the RoHS Directive (EU 2002/95/EC).

Power Transistors

2SB1255
Silicon PNP epitaxial planar type darlington
Unit: mm

For power amplification

Complementary to 2SD1895

5.00.2

(0.7)

15.00.3

(3.2)

VCE = 10 V, IC = 0.5 A, f = 1 MHz

20

MHz

ton

IC = 7 A, IB1 = 7 mA, IB2 = 7 mA

1.0

Storage time

tstg

VCC = 50 V

1.5

Fall time

tf

1.2

(3.5)
Solder Dip

fT

Turn-on time

16.20.5

Transition frequency

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Optimum for 90 W HiFi output

High forward current transfer ratio hFE
Low collector-emitter saturation voltage VCE(sat)
Full-pack package which can be installed to the heat sink with one
screw

3.20.1

15.00.2

Features

21.00.5

M
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11.00.2

2.00.2

5.450.3

10.90.5

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

VCBO

160

Collector-emitter voltage (Base open)

VCEO

140

Emitter-base voltage (Collector open)

VEBO

Collector current

IC

Peak collector current

ICP

15

PC

100

Ta = 25C

0.60.2

1.10.1

Absolute Maximum Ratings TC = 25C

Collector power dissipation

2.00.1

1: Base
2: Collector
3: Emitter
EIAJ: SC-92
TOP-3F-A1 Package

Internal Connection

Junction temperature

Tj

150

Storage temperature

Tstg

55 to +150

ue

Electrical Characteristics TC = 25C 3C

Symbol

Conditions

Min

Typ

Max

Unit

VCEO

IC = 30 mA, IB = 0

Collector-base cutoff current (Emitter open)

ICBO

VCB = 160 V, IE = 0

100

Collector-emitter cutoff current (Base open)

ICEO

VCE = 140 V, IB = 0

100

Emitter-base cutoff current (Collector open)

IEBO

VEB = 5 V, IC = 0

100

nc

e/

on

Collector-emitter voltage (Base open)

Di
sc

tin

Parameter

140

hFE1

VCE = 5 V, IC = 1 A

2 000

hFE2 *

VCE = 5 V, IC = 7 A

5 000

Collector-emitter saturation voltage

VCE(sat)

IC = 7 A, IB = 7 mA

2.5

Base-emitter saturation voltage

VBE(sat)

IC = 7 A, IB = 7 mA

3.0

Pl

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te
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Forward current transfer ratio

30 000

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
hFE2

5 000 to 15 000 7 000 to 21 000 8 000 to 30 000

Publication date: March 2003

SJD00064BED

This product complies with the RoHS Directive (EU 2002/95/EC).

2SB1255

TC=25C
IB=2mA

10

Collector current IC (A)

100

VCE(sat) IC

(1)
80

1mA
0.9mA
0.8mA
0.7mA

100

IC/IB=1000

10
TC=100C

M
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tin nc
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Collector power dissipation PC (W)

IC VCE
12

(1)TC=Ta
(2)With a 1001002mm
Al heat sink
(3)Without heat sink
(PC=3W)

Collector-emitter saturation voltage VCE(sat) (V)

PC Ta
120

60

40

(3)

80

120

10

12

Forward current transfer ratio hFE

TC=25C

25C

10

TC=100C

104

25C

103

102

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10

tin

Collector current IC (A)

tstg

Safe operation area

100

Non repetitive pulse

TC=25C

tf

t=1ms

IC

t=10ms

DC

Pl

1 ton

10

0.1

0.1

0.01

12

16

0.01
1

10

100

1 000

Collector-emitter voltage VCE (V)

SJD00064BED

100

IE=0
f=1MHz
TC=25C

100

10

1
1

10

100

Collector-base voltage VCB (V)

Collector current IC (A)

ICP

te
na

10

Collector current IC (A)

on

Di
sc

nc

e/

Pulsed tw=1ms
Duty cycle=1%
IC/IB=1000
(IB1=IB2)
VCC=50V
TC=25C

M
ain

Turn-on time ton , Storage time tstg , Fall time tf (s)

ton , tstg , tf IC

10

Cob VCB

25C

0.1

Collector current IC (A)

1 000

VCE=5V

10
0.01

100

Collector current IC (A)

100

0.1
0.1

hFE IC

10

0.2mA

105

IC/IB=1000

25C
25C

Collector-emitter voltage VCE (V)

VBE(sat) IC

100

Base-emitter saturation voltage VBE(sat) (V)

0.3mA

160

Ambient temperature Ta (C)

0.1
0.1

0.4mA

Collector output capacitance

C (pF)
(Common base, input open circuited) ob

40

100C

0.5mA

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(2)

0.6mA

20

tin

on

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101
104

103

102

101

Time t (s)

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Di
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Pl

M
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Thermal resistance Rth (C/W)

M
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This product complies with the RoHS Directive (EU 2002/95/EC).

2SB1255

104

Rth t

Note: Rth was measured at Ta=25C and under natural convection.

(1)PT=10V0.3A(3W) and without heat sink
(2)PT=10V1.0A(10W) and with a 1001002mm Al heat sink

103

102

(1)

10

(2)

10

102

103

SJD00064BED

104

Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.

pla d in
ea
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M
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

Pl

M
ain

te
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.