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N-Channel
Power MOSFET
CS630F A9H
General Description
200
ID
PD(TC=25)
30
RDS(ON)Typ
0.23
CS630F
A9H,
the
silicon
VDSS
N-channel
Enhanced
Features
l Fast Switching
l Low ON Resistance(Rdson0.28)
l Low Gate Charge
(Typical Data:13nC)
Applications
AutomotiveDC Motor Control and Class D Amplifier.
Parameter
VDSS
Drain-to-Source Voltage
Rating
Units
200
5.5
36
Gate-to-Source Voltage
30
460
mJ
50
mJ
Avalanche Current
3.2
5.0
V/ns
Power Dissipation
30
0.24
W/
15055 to 150
300
ID
IDM
VGS
a2
EAS
EAR
IAR
a1
a1
dv/dt
a3
PD
TJT stg
TL
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 1 of 1 0
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CS630F A9H
Parameter
Test Conditions
VDSS
VGS=0V, ID =250A
BVDSS/T J
ID=250uA,Reference25
IDSS
Rating
Units
Min.
Typ.
Max.
200
--
--
--
0.21
--
V/
--
--
Ta = 125
--
--
10
IGSS(F)
VGS =+30V
--
--
100
nA
IGSS(R)
VGS =-30V
--
--
-100
nA
ON Characteristics
Symbol
Parameter
Test Conditions
R DS(ON)
Drain-to-Source On-Resistance
VGS=10V,ID =5.4A
VGS(TH)
VDS = V GS , ID = 250A
Rating
Units
Min.
Typ.
Max.
--
0.23
0.28
4.0
2.0
Parameter
Test Conditions
g fs
VDS=25V, ID =5.4A
C iss
Input Capacitance
C oss
Output Capacitance
C rss
VGS = 0V V DS = 25V
f = 1.0MHz
Rating
Min.
Typ.
Max.
--
9.5
--
--
600
--
--
90
--
--
10
--
Units
S
pF
Parameter
td(ON)
tr
Rise Time
td(OFF)
tf
Fall Time
Qg
Qgs
Qgd
Test Conditions
ID =9A
VDD = 100V
VGS = 10V RG =12
ID =9A V DD =100V
VGS = 10V
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Rating
Min.
Typ.
Max.
--
10
--
--
21
--
--
24
--
--
17
--
--
13
--
--
--
4.5
--
Pa ge 2 of 1 0
2 0 1 5 V0 1
Units
ns
nC
CS630F A9H
Parameter
IS
Test Conditions
Rating
Units
Min.
Typ.
Max.
--
--
ISM
--
--
36
VSD
IS =9A,V GS =0V
--
--
1.5
trr
IS =9A,Tj = 25C
--
120
ns
dIF /dt=100A/us,
V GS=0V
--
495
nC
Qrr
Parameter
Typ.
R JC
Junction-to-Case
4.17
/W
R JA
Junction-to-Ambient
100
/W
Units
a1
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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2 0 1 5 V0 1
CS630F A9H
Characteristics Curve
40
30
20
10
0
0
25
50
75
100
125
150
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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2 0 1 5 V0 1
CS630F A9H
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 5 of 10
2 0 1 5 V0 1
CS630F A9H
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 6 of 10
2 0 1 5 V0 1
CS630F A9H
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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2 0 1 5 V0 1
CS630F A9H
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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2 0 1 5 V0 1
CS630F A9H
Package Information
Items
Values(mm)
MIN
MAX
9.60
10.40
15.40
16.20
B1
8.90
9.50
4.30
4.90
C1
2.10
3.00
2.40
3.00
0.60
1.00
0.30
0.60
1.12
1.42
3.40
3.80
2.00
2.40
12.00
14.00
6.30
7.70
2.34
2.74
3.15
3.55
3.00
3.30
TO-220F Package
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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2 0 1 5 V0 1
CS630F A9H
0.1%
Limit
Hg
Cd
Cr(VI)
PBB
PBDE
0.1%
0.01%
0.1%
0.1%
0.1%
Lead Frame
Molding Compound
Chip
Wire Bonding
Solder
Warnings
1.
2.
3.
4.
Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximum ratings of the device.
When installing the heatsink, please pay attention to the torsional moment and the smoothness
of the heatsink.
VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect
the device from being damaged by the static electricity when using it.
This publication is made by Huajing Microelectronics and subject to regular change without
notice.
Marketing Part
Post214061
UTH
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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