EXPERIMENT I

DIODE MODEL AND CHARACTERISTIC

I. End Result
To learn and analyze the characteristics of diode.

II. Scope
A. Theory
Semiconductor is the most important substance that had ever been found in
electronics field. One of the semiconductor that will be discussed in this meeting
is diode. Diode is a device that conduct electrical charge in one direction. Diode
has two parts which are Anode (positive) and Cathode (negative). The following
picture is the schematic symbol of PN diode and Zener diode.

Figure 1.1 Diode symbol

Figure 1.2 Physical form of diode

The most frequently used in electronics are Si diode which its knee voltage
0.7 V and 0.3 V for Ge diode. The diode response to the applied voltage is as
shown in Figure 1.3 below:
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In its application, an ideal

diode is just an
approximation. In fact, the
ideal approximation really
helps when designing a
circuit.

Figure 1.3 The Complete V-I characteristic curve for a diode

In this experiment, we will see the characteristics of diode which include

resistance, knee voltage, forward and reverse bias characteristics. Furthermore,
we will see the characteristics of Zener diode and its differences when forward or
reverse bias is applied.

B. References
1. Thomas L. Floyd. (2008). Electronic Devices, Conventional Current Version.
Edisi 8. Pearson, Prentice Hall. New Jersey. 978-0-13-615581-2.
2. Kevin F. Brennan & April S. Brown. (2002). Theory of Modern Electronic
Semiconductor Devices. Edisi 1. John Wiley & Sons. New York. 0-47141541-3.
3. Jimmie J.Cathey. (2002). Electronic Devices and Circuits. Edisi 2. McGrawHill. New York. 0-07-139830-9.
4. Floyd, Thomas L.. (2003). Electronics Fundamentals: Circuits, Devices and
Applications. Edisi 6. Prentice Hall. New Jersey. 0131111388.
5. Robert L. Boylestad & Louis Nashelsky. (2006). Electronics Device and
Circuit Theory. Edisi 9. Pearson, Prentice Ha. New Jersey. 0-13-197408-4.
6. Robert T. Paynter. (2003). Introductory Electronic Devices and Circuits,
Electron Flow Version. Edisi 6. Pearson, Prentice Ha. New Jersey. 0-13120675-3.
7. Malvino, Albert Paul. (1985). Semiconductor Circuit Approximations. Edisi 4.
McGraw-Hill. New York. 0070398984.
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8. Millman and Halkias, Integrated Electronics Mc Graw-Hill,1982.

9. Malvino, Semiconductor Circuit Aproximation, Prentice-Hall, 1985.
10. Floyd,Electronic Device Conventional Current Version Pearson Prentice
Hall, 2005.

III.

Devices
Oscilloscope
Experiment Box
Electronics Devices Experiment Module

IV. Instruction of Laboratory

A. Procedure
1. Forward Bias Characteristics

Figure 1.4

1. Switch on the PIN 1 of the DIP SWITCH to activate the Forward Bias
Characteristics Module, switch off the other pin.
2. Connect VPS to Digital Power Supply.
3. Measure the power supply voltage (VPS), adjust the VPS to the desired
voltage according to Table 1.1.
4. Measure the DIODE voltage and write down the value to Table 1.1.
5. Fill in the value of VR according to the equation provided below.
6. Repeat step 3 and fill Table 1.1.
VR = VPS VD1

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Table 1.1
VPS (Volt)

VD1 (Volt)

VR (Volt)

0,2
0,4
0,6
0,8
1,0
1,5
2,0
2,5

2. Reverse Bias Characteristics

DSW1

1K

VPS

ON

1N

Potensio1
100 K

1N

6.

Zener

VPS

1N4001

1N4001

Diodes
Voltage

GND

Figure 1.5

1. Switch on the PIN 2 of the DIP SWITCH to activate the Reverse Bias
Characteristics Module, switch off the other pin.
2. Connect VPS to Digital Power Supply.
3. Measure the power supply voltage (VPS), adjust the VPS to the desired
voltage according to Table 1.2.
4. Measure the DIODE voltage and write down the value to Table 1.2.
5. Fill in the value of VR according to the equation mentioned before.
6. Repeat from step 2 and so on to fill Table 1.2.

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Table 1.2
VPS (Volt)

VD2 (Volt)

VR (Volt)

1,0
1,5
2,0
3,0
5,0
8,0
10,0

3. Zener Diode Characteristics

Figure 1.6

1. Switch on the PIN 3 of the DIP SWITCH to activate the Zener Diode
Characteristics Module, switch off the other pin.
2. Connect VPS to Digital Power Supply.
3. Measure the power supply voltage (VPS), adjust the VPS to the desired
voltage according to Table 1.3.
4. Measure the DIODE voltage and write down the value to Table 1.3.
5. Fill in the value of VR according to the equation mentioned before.
6. Repeat from step 2 and so on to fill Table 1.3.

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Table 1.3
VPS (Volt)

VZ (Volt)

VR (Volt)

1,0
3,0
5,0
10,0
15,0

Beside Zener Diode,

Schottky Diode is
frequently used for high
frequency devices. Can
you mention one device
that use Schottky Diode?

B. Final reports requirement for minimum grade

1. Explain the diode in a comprehensive explanation! Explain the
characteristics of diode (its meaning, symbol, physical form, parameters:
Vk, VBR, rR, Vz)!
2. Explain the operation principle of diode, diode bias, characteristic curves
between voltage and current on diode, and diode approximations! Provide
images for the explanation!
3. Mention types of diode and explain briefly about the operation principle
and its application!
4. Describe and analyze ways to test a diode whether is damaged or not by
using a multimeter! Explain the background for each ways!

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5. Analyze the circuit below:

Draw and analyze the output signal! Explain the output result!
6. Analyze the circuit above if D1 is replaced by Zener diode!
7. Explain the operation principle of experiment 2.1, 2.2, and 2.3!
8. Analyze the experiment data (the impact of parameter changes which is
given in experiment 2.1, 2.2, and 2.3)! Correlate the data analysis
explanation with the operation principle in the experiment (point number
6)!
9. Simulate experiment 2.1, 2.2, and 2.3 using Multisim! Provide the
simulation data according to each table!
10. Write your conclusions for each experiments (at least 5)!

V. Attachments
Figure 1.7:
A
1K
CH1

V PS

IN4001

Forward
Diode

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Figure 1.8:
B
1K
CH1

IN4001

V PS

Reverse G
Diode

Figure 1.9:
C
1K
CH1

Zener
Diode

Electronic Devices
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Zener
Diode

V PS

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