College of Engineering: Submitted by

Republic of the Philippines
Mindanao State University - Iligan Institute of Technology
College of Engineering
Tibanga, 9200 Iligan City, P.O. Box No.5644 Tel. Nos. (063) 221-4050 Loc.130
Direct line (063) 2351E-mail:fbalagao@yahoo.com
Homepage: http://www.msuiit.edu.ph/coe
Department of Electrical, Electronics and Computer Engineering

Laboratory No. 5
Resistors Layout
In partial fulfillment for the course
ECE 135 (CAD Tools and Layout)
Submitted by:
TOLEDO, John Xavier P.
Submitted to:
Prof. Jefrey C. Pasco
April 2016
ABSTRACT
This paper presents different layouts for different types of resistors

Diffusion, NWell, and Poly- and calculations for length using the given
predetermined values of sheet resistance, width and differential width, and
the number of segments. These resistors are categorized into different
process and layering that each of them undergoes. RPO layering or Reverse
Protect Oxide, introduced in this paper, is capable of blocking silicide layer, a
low resistance layer. This paper also includes percent difference between the
exact value and actual value of resistances involved
INTRODUCTION
A resistor is
a passive two-terminal electrical
component that
implements electrical resistance as a circuit element. Resistors act to reduce
current flow, and, at the same time, act to lower voltage levels within
circuits. In electronic circuits, resistors are used to limit current flow, to
adjust signal levels, bias active elements, and terminate transmission
lines among other uses.
The value of a resistor can be computed given its dimensions and
composition. Each material possesses a characteristic resistivity, is the
inverse of conductivity, so if one of these two properties is known, then the
other can be determined.
R= s
Where,
Rs
( WLT )=R ( WL )
s
= sheet resistance
Figure 1. Illustrative view for thinfilm resistance calculations.

RESISTOR TYPES
a. N+ Diffusion without Silicide (w/ RPO)
Calculations:
Given
R= 1640
Segments = 24
Rs = 59
W = 2.5 m W = 0
No. of
L=
R(W W )
1640 (2.5 m)
=
=2.895 m
Rs (No . of Segments)
59 (24)
Figure 2. Schematic Diagram, Layout, Verifications Results LVS and LPE-, and
Largest Parasitic
Value.
Resistor Type
Total Width
Total Length
No. of
Segments
Resistance
Value
N+ Diffusion
without
Silicide
(w/RPO)
2.5 m
69.48 m
24
1639. 73
Table 1. Schematic Diagram Data in Cell View model.
b. N+ Diffusion with Silicide (w/o RPO)

Calculations:
Given R= 1640
16
L=
Rs = 6.82 W = 1.8 m W = -0.0765 m No. of Segments =
R(W W )
1640 (1.8 m0.0765 m)
=
=28.21 m
6.82(16)
Largest Parasitic
Value.
Resistor Type
Total Width
Total Length
No. of
Segments
Resistance
Value
N+ Diffusion
with Silicide
(w/o RPO)
1.8 m
451.36 m
16
1640. 43
c. P+ Diffusion without Silicide (w/ RPO)

Calculations:
Given R= 1640
L=
Rs = 133 W = 2.5 m W = 0 m No. of Segments = 24
R(W W )
1640 (2.5 m)
=
=1.285 m
133 (24)
Largest Parasitic
Value.
Resistor Type
Total Width
Total Length
No. of
Segments
Resistance
Value
P+ Diffusion
without
Silicide (w/
RPO)
2.5 m
30.84 m
24
1640. 69
d. P+ Diffusion with Silicide (w/o RPO)

Calculations:
Given R= 1640
24
L=
Rs = 7.76 W = 1.8 m W = -0.08 m
R(W W )
1640 (1.8 m+0.08 m)
=
=16.555 m
7.76 (24 )
No. of Segments =
Largest Parasitic
Value.
Resistor Type
Total Width
Total Length
No. of
Segments
Resistance
Value
P+ Diffusion
with Silicide
(w/o RPO)
1.8 m
397.32 m
24
1640
e. N+ Poly with Silicide (w/o RPO)

Calculations:
Given R= 1640
24
L=
Rs = 7.9
W = 1.8 m W = -0.057 m
R(W W )
1640 (1.8 m+0.08 m)
=
=16.09 m
7.9 (24)
No. of Segments =
Largest Parasitic
Value.
Resistor Type
Total Width
Total Length
No. of
Segments
Resistance
Value
N+ Poly with
Silicide (w/o
RPO)
1.8 m
386.16 m
24
1640.71
f. P+ Poly with Silicide (w/o RPO)

Calculations:
Given R= 1640
24
L=
Rs = 7.89 W = 1.8 m W = -0.057 m
R(W W )
1640 (1.8 m+0.057 m)
=
=16.09 m
7. 8 9 (24)
No. of Segments =
Largest Parasitic
Value.
Resistor Type
Total Width
Total Length
No. of
Segments
Resistance
Value
P+ Poly with
Silicide (w/o
RPO)
1.8 m
379.70 m
24
1641.47
g. N-Well Under STI

Calculations:
Given R= 840k
24
L=
Rs = 927 W = 24 m W = 0.182 m
R(W W )
840 k (24 m0.1 8 2 m)
=
=899.275 m
927 (24)
No. of Segments =
Largest Parasitic
Value.
Resistor Type
Width per
Segment
Total Length
No. of
Segments
Resistance
Value
N-Well under
STI
24 m
21582.6 m
24
839976
h. N-Well Under OD
Calculations:
Given R= 840k
40
L=
Rs = 440 W = 20 m W = 0.141 m
R(W W )
840 k (20 m0.1 41 m)
=
=947.815 m
440 (40)
No. of Segments =
Largest Parasitic
Value.
Resistor Type
Width per
Segment
Total Length
No. of
Segments
Resistance
Value
N-Well Under
OD
20 m
37912.60 m
40
840000
Resistor Type
Exact Value
Layout Value
N+ Diffusion
without Silicide
(w/RPO)
N+ Diffusion with
Silicide (w/o
RPO)
P+ Diffusion
without Silicide
(w/ RPO)
P+ Diffusion with
Silicide (w/o
RPO)
N+ Poly with
Silicide (w/o
RPO)
P+ Poly with
Silicide (w/o
RPO)
N-Well Under STI
1640
1639. 73
Percent
Difference (%)
0.01646
1640
1640. 43
0.02622
1640
1640. 69
0.04207
1640
1640
1640
1640.71
0.04329
1640
1641.47
0.08963
840000
839976
0.00286
N-Well Under OD
840000
840000
Table 8. Comparative Resistance Value for each resistor types.
CONCLUSION
Resistors are the most common type of passive component in analog
integrated circuits, and many different types are available. CMOS offers doped
polysilicon resistors that are superior to diffused resistors and well resistors are
used to obtain large values of resistance. The value of most resistors can be
determined by means of simple computation involving length and width.
Based on Table 8, the layout resistance value for each type hardly achieved
exact value of resistance. The increase or decrease of resistance is based on the
percentage tolerance of the resistor. Based on the layout for each resistor, each
segment has the same width and oriented in the same manner with other
segments. Each resistor has included dummy except in the NWell under OD and also
each segment is connected in serpentine manner in order to cancel the
thermoelectric effect.
REFERENCES
1. Hastings, Alan; The Art of Analog Layout (2016), 2 nd ed., Publishing
House of Beijing, Pearson Education in Asia.

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Republic of the Philippines

Mindanao State University - Iligan Institute of Technology

Department of Electrical, Electronics and Computer Engineering

This paper presents different layouts for different types of resistors

Figure 1. Illustrative view for thinfilm resistance calculations.

Table 1. Schematic Diagram Data in Cell View model.

b. N+ Diffusion with Silicide (w/o RPO)

Rs = 6.82 W = 1.8 m W = -0.0765 m No. of Segments =

Table 2. Schematic Diagram Data in Cell View model.

c. P+ Diffusion without Silicide (w/ RPO)

Rs = 133 W = 2.5 m W = 0 m No. of Segments = 24

Table 3. Schematic Diagram Data in Cell View model.

d. P+ Diffusion with Silicide (w/o RPO)

Rs = 7.76 W = 1.8 m W = -0.08 m

Table 4. Schematic Diagram Data in Cell View model.

e. N+ Poly with Silicide (w/o RPO)

Table 5. Schematic Diagram Data in Cell View model.

f. P+ Poly with Silicide (w/o RPO)

Rs = 7.89 W = 1.8 m W = -0.057 m

Table 6. Schematic Diagram Data in Cell View model.

g. N-Well Under STI

Table 7. Schematic Diagram Data in Cell View model.

Table 7. Schematic Diagram Data in Cell View model.

Table 8. Comparative Resistance Value for each resistor types.

House of Beijing, Pearson Education in Asia.

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