JFET CHARACTERISTICS

Aim :- To draw drain characteristics and transfer

characteristics of N-Channel JFET

Apparatus :-
1) FET Characteristics circuit Arrangement
2) 12V Power Supply.
3) 0-15V Voltmeter.
4) 0-10V Voltmeter.
5) 0-20mA Ammeter.

Circuit Diagram:

Theory :-

FET is a semiconductor device which depends for its

operation on the control of current by an electric field. The
FET differs Bipolar Transistor in the following important
characteristics.

1. Its operation depends on the flow of majority carriers

only hence it is Uni-Polar device.
2. It is simple to fabricate and occupies less space in
integrated form.
3. It exhibits a high input resistance.
4. It is less noisy than Bipolar Transistor.
5. It exhibits no Off-set Voltage at Zero drain current and
hence makes an excellent signal chopper.

The Symbol for N-channel and P-channel JFETs are as follows

n-channel FET p-channel FET

The following are the important parameters of common

source configuration.

1) Drain Resistance (rd) = Vds/Id When Vgs is

constant.
2) Transconductance (gm) = Id/Vgs When Vds is
constant.
3) Amplification Factor ()=rd*gm When Id is constant.

Procedure :-

DRAIN CHARACTERISTICS:-

1. Connections are made as per the circuit diagram

2. To draw drain characteristics, keep V gs=0V and vary Vdd
from 0 to 12V in steps of 1V and note down the
corresponding values of Id.
3. Vary the values of Vgs from -1V to -4V insteps of 1V and
repeat the above procedure.
4. From the above readings draw the drain characteristics
between Id and Vds.
TRANSFER CHARACTERISTICS:-
1. Connections are made as per the circuit diagram.
2. Apply Vdd=10V and vary Vgs from 0 to -5V in steps of
0.1V and note down the Id.
3. From the above draw the transfer characteristics.

RESULT:-

The drain characteristics and transfer characteristics of

N-channel JFET are obtained.
PROGRAM :-

DRAIN CHARACTERISTICS:-

Vgs 1 0 DC 0V
Vx 3 2 DC 0V
Vdd 3 0 DC 12V
J1 2 1 0 JMOD
.MODEL JMOD NJF (Is=100e-14 Rd-10 Rs=10 BETA=1e-3
VTO=-5v)
.DC Vdd 0 12V .2 Vgs 0 -4 1
.PLOT DC I(VX)
.PROBE
.END

TRANSFER CHARACTERISTICS:-

Vgs 1 0 DC 0V
Vx 3 2 DC 0V
Vdd 3 0 DC 10V
J1 2 1 0 JMOD
.MODEL JMOD NJF (Is=100e-14 Rd-10 Rs=10 BETA=1e-3
VTO=-5v)
.DC Vgs 0 -5 .1
.PLOT DC I(VX)
.PROBE
.END
 JFET AMPLIFIER

Aim:- To study the frequency response of n-channel JFET

amplifier and to calculate bandwidth.
Apparatus:-

1. FET Amplifier kit

2. Function Generator
3. CRO
4. Probes and connecting wires.

Circuit Diagram:

Theory:-

FET is a semiconductor device which depends for its

operation on the control of current by an electric field. The
FET differs Bipolar transistor in the following important
characteristics.

1. Its operation depends on the flow of majority carriers

only hence it is Uni-Polar device.
2. It is simple to frabricate and occupies less space in
integrated form.

3. It exhibits a high input resistance because gate to

source is reverse biased.
 4. It is less noisy than Bipolar Transistor.
5. It exhibits no Off-set Voltage at Zero drain current and
hence makes an excellent signal chopper.

The Symbol for N-channel and P-channel JFETs are as follows

n-channel FET p-channel FET

The structure of an N=channel FET is ohmic contacts are

made to the two ends of a semiconductor bar of n-type
material. Current is caused to flow along the length of the bar
because of the voltage supply connected between the ends.

By giving proper biasing conditions FET can be used as an

amplifier. These considerations are output voltage swing,
distortion, power dissipation, voltage gain and drift. In this
circuit, it uses Rg to give proper biasing voltage to the gate of
the GFET to operate in faithful amplification state. R 3 limits
the drain current and C3 forms bypass capacitor and voltage
gain depends on R4, C3 and R3 values.

Procedure:-

1. Connections are made as per the circuit diagram.

2. Feed a sine wave of 0.5V amplitude at 1 KHz from a
signal generator to the input terminals of the amplifier.
3. Measure the output voltage and calculate gain.
Gain=V0/Vin

1) Keep amplitude constant and vary frequency from 10Hz

to 1MHz and note down the output voltage and
calculate gain.
2) Draw the frequency response between frequency and
voltage gain.
Result:-

The frequency response of FET amplifier is obtained and

bandwidth is calculated.
 DUAL VOLTAGE REGULATED POWER SUPPLY

Vin 1 0 AC 230 Sin(0 230 50Hz)

E1 2 0 1 0 0.07
E2 0 3 1 0 0.07
D1 2 4 1N4007
D2 3 4 1N4007
D3 5 3 1N4007
D4 5 4 1N4007
C1 4 0 470uF
C2 0 5 470uF
.MODEL 1N4007 D()
.TRAN 5us 20ms
.PROBE
.END

BUFFER AMPLIFIER
Vin 1 0 AC 0.02V Sin(0 0.02 1Hz)
C1 1 2 0.1uF
R1 3 2 1Mega
R2 2 0 1Mega
RE 4 0 2.7K
CE 4 5 10uF
Rl 5 0 10k
Q 3 2 5 BC148B
.MODEL BC148B npn( )
.TRAN 5us 1ms
.AC 100 10HZ 1Mega
.PROBE
.END