Electronic Devices Assignment 2

1. Find the resistivity of intrinsic Si at 300 K. (For Si: n = 1450, p = 505)

2. (a) Show that the minimum conductivity of a semiconductor sample occurs when
 =

  / .
(b) What is the expression for minimum conductivity
 .
(c) Calculate
 for Si at room temperature and compare with intrinsic conductivity.
{
 = 1.5 10 cm-3,  = 1350 cm2/V.s,  = 480 cm2/V.s }
3. (a) A Si sample is doped with 1017 boron atoms/cm3. What is the electron and hole concentration
at 300 K? What is the resistivity?
(b) A Ge sample is doped with 3 x 1013 Sb atoms/cm3. Calculate the electron concentration n0 at
300 K.
{Si:
 = 1.5 10 cm-3,  = 250 cm2/V.s ; Ge:
 = 3 10 cm-3} Please note that when ni
and ND are comparable, you will have to use the expression derived using space charge neutrality
condition.
4. For a Si conductor of length 5 m, doped n-type at 1015 cm-3, calculate the current density for the
applied voltage of 2.5 V across its length. {  = 1500 cm2/V.s,  = 500 cm2/V.s }
5. Consider a GaAs sample at T = 300 K. A Hall effect device has been fabricated with the
following geometry: d = 0.01 cm, W = 0.05 cm, L = 0.5 cm. The electrical parameters are: Ix =
2.5 mA, Vx = 2.2 V, Bz = 250 Gauss. The Hall voltage is VH = -4.5 mV. Find (a) the conductivity
type, (b) the majority carrier concentration, (c) the mobility and (d) the resistivity.

6. Consider a semiconductor that is nonuniformly doped with donor impurity atoms ND(x). Show
that the induced electric field in the semiconductor in thermal equilibrium is given by
 1 !
 =  
   !

7. An intrinsic Si sample is doped with donors from one side such that ND = N0 exp (-ax ). (a) Find
an expression for the built-in field  at equilibrium over the range for which ND>>ni ;. (b)
Evaluate  when a = 1 m-1.
8. Calculate the electron and hole concentration under steady-state illumination in an n-type silicon
with GL = 1016 cm-3s-l , ND = 1015 cm-3, and n = p = 10 s.
9. The total current in a semiconductor is constant and is composed of electron drift current and
hole diffusion current. The electron concentration is constant and equal to 1016 cm-3. The hole
concentration is given by

" = 10# exp ' ) *+, ,  0
(
where L = 12 m. The hole diffusion coefficient is Dp = 12 cm2/s and the electron mobility is n
= 1000 cm2/V-s. The total current density is J = 4.8 A/cm2. Calculate (a) the hole diffusion
current density versus x, (b) the electron current density versus x, and (c) the electric field versus
x.
10. A silicon wafer (NA = 1014/cm3, n = 1 s, T = 300K) is first illuminated for a time t n with
light which generates GL0 = 1016 e-h pairs per cm3-s uniformly throughout the volume of the
silicon. At time t = 0 the light intensity is reduced, making GL = GL0/2 for t 0. Determine np(t)
for t 0.
11. Excess carriers are injected on one surface of a thin slice of n-type silicon so that pn(x=0) = pn(0).
Thickness of the slice is W. The carriers are extracted at the opposite surface where pn(W) = pn0.
There is no electric field in the region 0 < x < W. Derive the expression for current densities at
the two surfaces.
12. An n-type silicon sample with ND = 1016 cm-3 is steadily illuminated such that GL = 1021/cm-3-s.
If n = p = 10-6 s, calculate the position of the quasi-Fermi levels for electrons and holes with
respect to the intrinsic level. Plot these levels on an energy band diagram.