Exercise3

1 Themaximumvalueofthefunctionf(x)=in(1+x)x(wherex>1)occurs
atx=_____.

2 Which ONE of the following is a linear nonhomogeneous differential

equation, where x and y are the independent and dependent variables
respectively?

dy dy
(A) + xy = e x (B) + xy = 0
dx dx

dy dy
(C) + xy = e y (D) + x y = 0
dx dx

3Matchtheapplicationtoappropriatenumericalmethod.

Application Numerical|Method
P1:Numericalintegration M1:NewtonRaphsonMethod
P2: Solution to a transcendental M2:RungeKuttaMethod
equation
P3: Solution to a system of linear M3:Simpsons1/3rule
equations
P4:Solutiontoadifferentialequation M4:GaussEliminationMethod
(A)P1M3,P2M2,P3M4,P4M1

(B)P1M3,P2M1,P3M4,P4M2

(C)P1M4,P2M1,P3M3,P4M2

(D)P1M2,P2M1,P3M3,P4M4
4 Anunbiasedcoinistossedaninfinitenumberoftimes.Theprobabilitythat
thefourthheadappearsatthetenthtossis

(A)0.067 (B)0.073 (C)0.082 (D)0.091

5 Ifz=xyln(xy),then

z z z z
(A) x + y = 0 B) y =x
x y x y

z z z z
(C) x =y D) y + x = 0
x y x y

6. A series RC circuit is connected to a DC voltage source at time t = 0. The

relationbetweenthesourcevoltageVS,theresistanceR,thecapacitanceC,
andthecurrenti(t)isgivenbelow:

1 t
c o
Vs = Ri (t ) + i (u )du.

Whichoneofthefollowingrepresentsthecurrenti(t)?

(A) (B)
 (C) (D)

7 Inthefigureshown,thevalueofthecurrentI(inAmperes)is__________.

8. InMOSFETfabrication,thechannellengthisdefinedduringtheprocessof

(A)isolationoxidegrowth (B)channelstopimplantation

(C)polysilicongatepatterning

(D)Lithographystepleadingtothecontactpads

9. A thin Ptype silicon sample is uniformly illuminated with light which

generatesexcesscarriers.Therecombinationrateisdirectlyproportionalto

(A)theminoritycarriermobility

(B)theminoritycarrierrecombinationlifetime

(C)themajoritycarrierconcentration
 (D
D)theexce
essminorittycarriercconcentrattion

10. A T = 300 K, the hole mobilityy of a sem

At or p = 500 cm2/Vs and
miconducto
KT
K
=26m nconstanttDpincm2/sis_____
mV.Theholediffusion / ____
q

11 T
Thedesirab
blecharactteristicsofatransconductanceeamplifierare

(A
A)highinp
putresistanceandhiighoutputresistancee

(B
B)highinp
putresistanceandlo
owoutputresistance

(C
C)lowinputresistan
nceandhigghoutputresistance

(D
D)lowinp
putresistan
nceandlow
woutputrresistance

12 In
n the circu
uit shown, the PNP
P transistor has |VBE| = 0.7 V
V and =
= 50.
A
Assumetha 0k.ForV
atRB=100 V,thevalueeofRC(inkk)is________
V0tobe5V

13 T figure shows a halfwave
The h rectifier. The
T diode D is ideal. The average
stteadystate current (in Ampeeres) thro
ough the diode is approximaately
_
__________
___.

14. A
Ananalogv
voltagein therangee0to8V isdivided in16equaalintervalssfor
conversionto4bitdiigitaloutput.Themaaximumqu nerror(in V)is
uantization
_
_________

15. T
Thecircuits
shownintthefigureiisa

(A
A)ToggleFFlipFlop (B)JKFlipFlop

(C
C)SRLatch
h (D)MaasterSlaveeDFlipFlo
op

16. C
Considerth
hemultipleexerbasedlogiccircu
uitshowninthefigurre.

W
Whichoneofthefollo
owingBoo
oleanfuncttionsisreaalizedbyth
hecircuit?

A) F = WS
(A W 1 S2 (B)F=WSS1+WS2+SS1S2

C) F = W 1 + S1 + S2
(C (D) F = W S1 S2

17. Let x(t) = cos(10

c t) + cos(30t) be sam
mpled at 20 Hz and reconstructed
using an ideal
i lowpass filteer with cu quency off 20 Hz. The
utoff freq
frrequency/ffrequencieespresentinthereco
onstructed
dsignalis/aare

(A
A)5Hzand
d15Hzonly (B)10Hzand15Hzonlyy

(C
C)5Hz,10
0Hzand15
5Hzonly (D)5Hzonly

18. Foranallpasssystem
mH(z)=
(z 1
b ) ,wwhere|H(ee j
)|=1,fforall.
1
(1 az )

IffRe(a) 0
0,Im(a)0
0,thenbeq
quals

(A
A)a (B)a* (C)1/aa* (D)1/a

19. ed signal is y(t) = m(t)cos(40000t), where the baaseband siignal

A modulate
A
m
m(t) has frequency
f componeents less than
t 5 kH
Hz only. The
T minim
mum
reequired raate (in kHzz) at which
h y(t) shou
uld be sam
mpled to recover
r m((t) is
_
_______.

20. C
Considerth
hefollowingblockdiaagraminth
hefigure.

C (s)
T
Thetransfe
erfunction is
R( s)

G1G2
(A
A) (B))G1G2+G
G1+1
1 + G1G2

G1
(C
C)G1G2+G
G2+1 (D
D)
1 + G1G2

21. The 2t u(t), where u(tt) is the unit

T input 3e u step function,
f iss applied to a
s2
syystem with transfer function . If th
he initial vaalue of thee output is 2,
s+3
th
henthevaalueoftheoutputatsteadystaateis

22. T
Thephaser
responseo
ofapassbaandwavefformattheereceiveriisgivenbyy

( f ) = 2
( f f c ) 2 f c
 w
where fc is the centre frequenccy, and and aree positive constants.
c The
actualsignaalpropagattiondelayfromthettransmitterto

(A
A) (B)) (C) (D)
+ +

23. C
Consider an FM sign
nal f(t) = cos[2
c fc t +
+ 2 sin 2 f2 t] sin
n 2 f2 t]. The
m
maximum deviation of the instantaneous frequ m the carrier
uency from
frrequencyffcis

A)1f1+2f2
(A (B)1 f2+2f1 (C)1++2 (D)f1+f2

24. C
Consideran
nairfilledrectangulaarwaveguidewithaccrosssectiionof5cm
m3
cm. For this waveguide, the cutoff
c freq
quency (in
n MHz) off TE21 mod
de is
_
________.

25. In
nthefollowingfigure,thetran
nsmitterTxxsendsaw
wideband modulatedRF
signalviaa coaxialcaabletothe receiverR
Rx.Theouttputimped
danceZTo
ofTx,
th
hecharactteristicimp
pedanceZ0ofthecableandth
heinputim
mpedanceZZRof
R
Rxareallre
eal.

W
Whichone ofthefollowingstatementsissTRUEabo
outthedisstortionoffthe
reeceivedsiggnaldueto
oimpedancemismattch?

A)ThesignalgetsdistortedifZZRZ0,irreespectiveo
(A ofthevalueofZT
 (B)ThesignalgetsdistortedifZTZ0,irrespectiveofthevalueofZR

(C)Signaldistortionimpliesimpedancemismatchatbothends:ZT Z0and
ZRZ0

(D) Impedance mismatches do NOT result in signal distortion but reduce

powertransferefficiency

26 The maximum value of f(x) = 2x3 9x2 + 12 x 3 in the interval 0 x 3

is_______.

27 WhichoneofthefollowingstatementsisNOTtrueforasquarematrixA?

(A) If A is upper triangular, the Eigen values of A are the diagonal

elementsofit

(B) If A is real symmetric, the Eigen values of A are always real and
positive

(C) IfAisreal,theEigenvaluesofAandATarealwaysthesame

(D) IfalltheprincipalminorsofAarepositive,alltheeigenvaluesofA
arealsopositive

28. Afaircoinistossedrepeatedlytillbothheadandtailappearatleastonce.
Theaveragenumberoftossesrequiredis______.

29. Let X1, X2, and X3 be independent and identically distributed random
variableswiththeuniformdistributionon[0,1].TheprobabilityP{X1+X2
X3}is________.

30. C
Considerth
hebuildingblockcalleedNetwo
orkNshow
wninthefigure.

LetC=100FandR==10k.

T
Twosuchblocksarecconnectedincascadee,asshowninthefiggure.

V3 ( s )
T
Thetransfe
erfunction ofthecascadeednetworkis
V1 ( s )

2
s s2 s s
(A
A) (B)) (C) (D)
1+ s 1 + 3s + s 2 1+ s 2+s

31 In nthefigure,thevalu
nthecircuitshownin ueofnodevoltageV2is

(A)22+j2
2V

(B)2+j22
2V

(C)22j2
2V

(D)2j22
2V
32. In
n the circu
uit shown in the figgure, the angular
a freequency (in rad/ss), at
w
which the Norton eq n from terrminals bb' is
quivalent impedance as seen
p
purelyresis
stive,is__________.

33. For the Ynetwork shown

s in the figuree, the value of R1 (in ) in the
equivalent networkis____.

34. T
Thedonor andaccepterimpuritiesinan abruptjun
nctionsilico
ondiodeaare1
x 1016cm3 and510
018cm3,reespectivelyy.Assume thattheintrinsiccarrier
KT
concentratiioninsilico 51010cm
onni=1.5 m3at300 K, =2
26mVand
dthe
q
p
permittivity n si=1.041012F//cm.Theb
yofsilicon builtinpottentialand
dthe
 depletion width of the diod
de under thermal equilibrium conditiions,
reespectivelyy,are

(A nd1x104cm
A)0.7Van Vand1x104cm
(B)0.86V

(C
C)0.7Van 05cm
nd3.3x10 (D)0.86Vand3.3x105

cm

35 T
Theslopeo OSFETinlinearregim
oftheIDvss.VGScurveeofannchannelMO meis
103)1at VDS = 0.1
1 1 V. For the same device,
d neeglecting channel
c length
m n, the slope of the I D vs. VGSS curve (in A/V) under saturaation
modulation

reegimeisap
pproximately__________.

36 A OScapacittorhasborondopinggconcentrrationof1015cm3in
AnidealMO nthe
substrate.W
Whenagaatevoltageeisapplied,adepleetionregionofwidth
h0.5
is form
m med with a surface (cchannel) potential
p o 0.2 V. Given
of G that 0 =
8
8.854 014 F/cm and the relative
x 10 r peermittivitiees of silico
on and sillicon
dioxide are
e 12 and 4,
4 respectivvely, the peak
p electrric field (in
n V/m) in
n the
o
oxideregionis__________.

37. In
n the circu
uit shown,, the silico
on BJT hass = 50. Assume
A VBE
B = 0.7 V and

VCE(sat)=0.2
2V.Whichoneoftheefollowinggstatemen
ntsiscorrecct?

(A =1k,theeBJToperaatesinthesaturation
A)ForRC= nregion
 (B =3k,theeBJToperaatesinthesaturation
B)ForRC= nregion

(C =20k,theeBJToperratesintheecutoffreegion
C)ForRC=

(D =20k,theBJToperratesintheelinearreggion
D)ForRC=

38. AssumingthattheOp
A pampinth
hecircuitsshownisid
deal,Voisggivenby

5 5
A) V1 3V2
(A (B) 2V1 V2
2 2

3 7 11
C) V1 + V2
(C (D) 3V1 + V2
2 2 2

39 FortheMO
OSFETM1sshowninth W/L=2,VDDD=2.0V,nCox
hefigure,aassumeW
= V2 and VTH = 0.5 V. The
= 100 A/V T transistor M1 switches frrom saturaation
reegiontolin nwhenVinn(inVolts)is___________.
nearregion

40. IffWListheWordLineeandBLth
heBitLine,,anSRAMcellisshownin

(A
A) (B)

(C
C) (D)

41. In WandYarreMSBsoffthecontrrolinputs.TTheoutputF
nthecircuitshown,W
issgivenby

 (A) F = WX + WX + YZ (B) F = WX + WX + YZ

(C) F = WXY + WXY (D) F = (W + X )YZ

42. IfXandYareinputsandtheDifference(D=XY)andtheBorrow(B)are
the outputs, which one of the following diagrams implements a half
subtractor?

(A) (B)

(C) (D)

43. LetH1(z)=1pz1)1,H2(z)=1qz1)1,H(z)=H1(z)+rH2(z).Thequantities
p,q,rarerealnumbers.Considerp=1/2,q=1|r|<1.Ifthezeroof
H(Z)liesontheunitcircle,thenr=______

44. Let h(t) de

enote the impulse response
r o a causaal system with tran
of nsfer
1
unction
fu .Considerthefollowingthrreestatem
ments.
s +1

S1:Thesysttemisstab
ble.

h ( t + 1)
S2: isindepen
ndentoft fort>0.
h(t )

S3:Anoncausalsysteemwithth
hesametraansferfuncctionisstaable.

Fortheabo
ovesystem
m,

A)onlyS1andS2areetrue(B)onlySS2andS3aaretrue
(A

(C
C)onlyS1andS3areetrue(D)S1,S2
2andS3arretrue

1
45. T
Theztransformofth
hesequenccex[n]isggivenbyX[z]= ,with
hthe
(1 2zz )
2
1

onvergencee|z|>2.TThen,x[2]is_________
reegionofco

46. T
Thestateequationoffasecondorderlinearsystemisgivenbyy

47. T
Thestateequationoffasecondorderlinearsystemisgivenbyy

x(t)=Axx(t),x(0))=x0
 Forx0= 11 , x (t ) = e t and for x0 = 10 , x (t ) e t e 2t
t t 2 t

[ e ] e + 2 e

W
When x0 = 35 , x(t ) iss

A) 8et +11e2t (B) 11e t 8e 2t

t 2 t t 2 t
(A
8e 22 e 11e +16 e

C) 3e t 5e 2t (D) 5e t 3e 2t
t 2 t t 2 t
(C
3e +10 e 5e 6 e

48. In
n the roott locus plo
ot shown in the figu
ure, the pole/zero marks
m and the
arrowshavvebeenremoved.W
Whichoneo
ofthefollo
owingtran
nsferfuncttions
h
hasthisroo
otlocus?

s +1 s+4
(A
A) (B)
( s + 2)( s + 4)( s + 7)
7 ( s + 1)( s + 2)( s + 7)

s+7 ( s + 1))( s + 2)
(C
C) (D)
( s + 7)( s + 2)( s + 4)
4 ( s + 7))( s + 4)

49. Let X(t) be

e a wide sense
s stattionary (W
WSS) rando
om processs with po
ower
spectral de
ensity Y(t) is the pro
ocess defin
ned as Y(t)) = X(2t 1), the po
ower
spectraldensitySY(f)iis
 1 f 1 f
A) s y ( f ) = S X e j f
(A (B) s y ( f ) = S X e j f /2
2 2 2 2

1 f 1 f
(C
C) sy ( f ) = S X (D) s y ( f ) = S X e j 2 f
2 2 2 2

50. A real ban

A ndlimited random process
p X((t) has tw
wosided power
p spectral
density

106 (3000 | f |) Wattts / Hz for | f | 3KHzz

SX ( f ) =
0 ot therwise

w
wherefisthefrequen ulatesacarrier
ncyexpresssedinHz.ThesignallX(t)modu
cos16000 tandtheeresultantsignalisp dealbandpass
passedthroughanid
widthof2 kHz.
fiilterofunitygainwitthcentreffrequency of8kHzaandbandw
T
Theoutputpower(inWatts)is________.

51. In 0077t)+ccos(100t))}Vissampled
naPCMsyystem,thesignalm(tt)={sin(10
uistrate.TThesampleesareproccessedbyaauniformquantizerwith
attheNyqu
m data ratte of the PCM systeem in bits per
sttep size 0.75 V. Thee minimum
seecondis__
____.

52. A binary raandom variable X takkes the vaalue of 1 with

A w probaability 1/3. X is
nput to a cascade of
in o 2 indepeendent ideentical bin
nary symm
metric chan
nnels
(B
BSCs) each ossover prrobability 1/2. The output of BSCs are the
h with cro
raandomvarriablesY1aandY2assshowninthefigure.

 T
Thevalueo
ofH(Y1)+H
H(Y2)inbitssis___________________

53 G vectorA=((cosx)(siny) a x +(sinx)(cosy) a y ,where a x , a y denote

Giventhev

unitvectorsalongx, ydirections,respectively.Theemagnitud
deofcurl ofA
iss________
_

54. Aregionshownbelow
A wcontainsaperfectconductinghalfspacceandair.The

surface currrent K s on
o the surrface of the
t perfecct conducttor is K s = x 2

amperespe
ermeter.TThetangen
ntial H fieeldintheaairjustabo
ovetheperrfect
conductoriis

A) ( x + z ) 2 Ampeeres per
(A

m
meter

((B) x 2 Amp
peresperm
meter

C) z 2 Amperespermeter
(C

(D
D) z 2 Amperesperm
meter

55. A
Assume that
t a plane wave
w in air witth an electric
e field

E = 10cos(t 3x3 3z )a y V/mis incidentonanonm

magneticdielectricslaabof

ermittivity 3 which covers the region

reelative pe n z > 0. The anglee of
trransmissio
oninthediielectricslaabis_________degreees.

 KeyforExercise3

Q.No. Key 29 0.15to0.18
1 0.01to0.01 30 B
2 A 31 D
3 B 32 1.9to2.1
4 C 33 9to11
5 C 34 D
6 A 35 0.06to0.08
7 0.49to0.51 36 2.3to2.5
8 C 37 B
9 D 38 D
10 12.9to13.1 39 1.4to1.6
11 A 40 B
12 1.04to1.12 41 C
13 0.08to0.12 42 A
14 0.24to0.26 43 0.6to0.4
15 D 44 A
16 D 45 11.9to12.1
17 A 46 0.49to0.51
18 B 47 B
19 9.5to10.5 48 B
20 C 49 C
21 0.01to0.01 50 2.4to2.6
22 C 51 199to201
23 A 52 1.9to2.1
24 7750to7850 53 0.01to0.01
25 C 54 D
26 5.9to6.1 55 29to31
27 B
28 2.9to3.1