ND2406L/2410L, BSS129

N-Channel Depletion-Mode MOSFET Transistors

Product Summary
Part Number V(BR)DSV Min (V) rDS(on) Max (
) VGS(off) (V) ID (A)
ND2406L 6 1.5 to 4.5 0.23
240
ND2410L 10 0.5 to 2.5 0.18
BSS129 230 20 0.7 (min) 0.15

Features Benefits Applications

High Breakdown Voltage: 260 V

Normally On Low rDS Switch: 3.5


Low Input and Output Leakage

Low-Power Drive Requirement

Low Input Capacitance

Full-Voltage Operation
Normally On Switching Circuits

Low Offset Voltage
Current Sources/Limiters

Low Error Voltage
Power Supply, Converter Circuits

Easily Driven Without Buffer
Solid-State Relays

High-Speed Switching
Telecom Switches

TO-226AA TO-92-18CD
(TO-92) (TO-18 Lead Form)

S 1 S 1

G 2 D 2

D 3 G 3

Top View Top View

ND2406L BSS129
ND2410L

Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted)

Parameter Symbol ND2406L ND2410L BSS129 Unit

Drain-Source Voltage VDS 240 240 230

V
Gate-Source Voltage VGS
30
30
20
=  0.23 0.18 0.15
Continuous Drain Current (TJ = 150C) ID
= 

 0.14 0.12 A
Pulsed Drain Currenta IDM 0.9 0.9 0.6
=  0.8 0.8 1.0
Power Dissipation PD W
= 

 0.32 0.32 0.4
Maximum Junction-to-Ambient RthJA 156 156 125 C/W
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150 C

Notes
a. Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70198.
Applications information may also be obtained via FaxBack, request document #70612.

Siliconix 1
S-52426Rev. C, 14-Apr-97
ND2406L/2410L, BSS129
Specificationsa
Limits
ND2406L ND2410L BSS129

Parameter Symbol Test Conditions Typb Min Max Min Max Min Max Unit

Static

VGS = 9 V, ID = 10 mA 260 240

Drain-Source
D i S
V(BR)DSV VGS = 5 V, ID = 10 mA 260 240
Breakdown Voltage
g
VGS = 3 V, ID = 250 mA 260 230 V
VDS = 5 V, ID = 10 mA 1.5 4.5 0.5 2.5
Gate Source Cutoff Voltage
Gate-Source VGS(off)
GS( ff)
VDS = 3 V, ID = 1 mA 0.7
VDS = 0 V, VGS = "20 V "10 "10 "100
Gate Body Leakage
Gate-Body IGSS nA
TJ = 125
C "50 "50
VDS = 180 V, VGS = 9 V 1
TJ = 125
C 200
VDS = 180 V, VGS = 5 V 1
Drain Cutoff Current ID(off)
D( ff) mA
TJ = 125
C 200
VDS = 230 V, VGS = 3 V 0.1
TJ = 125
C 200
Drain-Saturation Currentc IDSS VDS = 10 V, VGS = 0 V 350 40 40 mA
VGS = 2 V, ID = 30 mA 3.3
VGS = 0 V, ID = 30 mA 4.5 6 10
Drain-Source On Resistancec
Drain Source On-Resistance rDS(on)
DS( ) W
TJ = 125
C 7.2 15 25
VGS = 0 V, ID = 14 mA 4 20
VDS = 25 V, ID = 250 mA 375 140
Forward Transconductance c gfs
f mS
110
Common Source VDS = 10 V, ID = 30 A
gos 70 mS
Output Conductancec

Dynamic

Input Capacitance Ciss 70 120 120

VDS = 25 V,
V VGS = 55 V
Output Capacitance Coss 20 30 30 pF
f = 1 MHz
Reverse Transfer Capacitance Crss 10 15 15

Switchingd

td(on) 15
Turn On Time
Turn-On
tr VDD = 25 V, RL = 830 W 75
ID ^ 30 mA,
mA VGEN = -5 V ns
td(off) RG = 25 W 40
Turn-Off Time
tf 100

Notes
a. TA = 25
C unless otherwise noted. VDDV24
b. For DESIGN AID ONLY, not subject to production testing.
c. Pulse test: PW v300 ms duty cycle v2%.
d. Switching time is essentially independent of operating temperature.

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 ND2406L/2410L, BSS129
Typical Characteristics (25
C Unless Otherwise Noted)
Output Characteristics (ND2406) Output Characteristics (ND2410)
200 200
VGS = 2 V 0.8 V VGS = 2 V 0.2 V
0V
160 1 V 160
0.4 V
I D Drain Current (mA)

I D Drain Current (mA)

0.4 V 0.2 V
0.6 V
120 1.2 V 120

0.4 V
80 1.4 V 80
0.6 V
1.6 V
40 40 0.8 V
1.8 V
1 V
2 V
0 0
0 0.4 0.8 1.2 1.6 2 0 0.4 0.8 1.2 1.6 2.0
VDS Drain-to-Source Voltage (V) VDS Drain-to-Source Voltage (V)

Transfer Characteristics (ND2406) Transfer Characteristics (ND2410)

500 500
VDS = 10 V TC = 55
C VDS = 10 V
125
C
400 400
25
C
I D Drain Current (mA)

I D Drain Current (mA)

300 300

200 200

25
C 55
C
100 100
TC = 125
C
0 0
4.5 3.5 2.5 1.5 0.5 0.5 4.5 3.5 2.5 1.5 0.5 0.5
VGS Gate-Source Voltage (V) VGS Gate-Source Voltage (V)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage On-Resistance vs. DrainCurrent
10 1000 25
VGS = 0 V
rDS(on)
8 800 20
I DSS Drain Current (mA)
rDS(on) On-Resistance (
)

rDS(on) On-Resistance (
)

IDSS

6 600 15
ND2410

4 400 10
ND2406

2 200 5
rDS @ ID = 30 mA, VGS = 0 V
IDSS @ VDS = 7.5 V, VGS = 0 V
0 0 0
1 2 3 4 5 6 10 100 1K
VGS(off) Gate-Source Cutoff Voltage (V) ID Drain Current (mA)

Siliconix 3
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 ND2406L/2410L, BSS129
Typical Characteristics (25
C Unless Otherwise Noted) (Contd)
Normalized On-Resistance
vs. Junction Temperature Forward Transconductance vs. Drain Current
2.25 350
VGS = 0 V 25
C

g fs Forward Transconductance (mS)

rDS(on) Drain-Source On-Resistance

2.00 I D = 30 mA 300
150
C
1.75 250 55
C
(Normalized)

1.50 200

1.25 150

1.00 100
VDS = 10 V
0.75 50 Pulse Test 80 ms,
1% Duty Cycle
0.50 0
50 10 30 70 110 150 1 10 100 1K
TJ Junction Temperature (
C) ID Drain Current (mA)

Capacitance Load Condition Effects on Switching

240 300
tf VDD = 25 V
VGS = 5 V VGS = 0 to 5 V
200 f = 1 MHz RG = 25W
100 t d(off)
t Switching Time (ns)
C Capacitance (pF)

160
tr

120

C iss
80 td(on)
10
40 C oss
C rss
0 3
0 10 20 30 40 50 1 10 100
VDS Drain-to-Source Voltage (V) ID Drain Current (mA)

Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)

1
Duty Cycle = 0.5
Normalized Effective Transient

0.2
Thermal Impedance

0.1 Notes:

0.1 0.05 PDM

0.02
t1
t2
t1
1. Duty Cycle, D =
t2
0.01 2. Per Unit Base = RthJA = 156
C/W
3. TJM TA = PDMZthJA(t)
Single Pulse

0.01
0.1 1 10 100 1K 10 K
t1 Square Wave Pulse Duration (sec)

4 Siliconix
S-52426Rev. C, 14-Apr-97