PD - 96252A

IRF7416GPbF
HEXFET Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance 1 8
A
l P-Channel Mosfet S D
l Surface Mount S
2 7
D
VDSS = -30V
l Available in Tape & Reel
l Dynamic dv/dt Rating S
3 6
D
l Fast Switching 4
l Lead-Free G 5
D RDS(on) = 0.02
l Halogen-Free
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.

The SO-8 has been modified through a customized SO-8

leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25C Continuous Drain Current, VGS @ -10V -10
ID @ TA = 70C Continuous Drain Current, VGS @ -10V -7.1 A
IDM Pulsed Drain Current c -45
PD @TA = 25C Power Dissipation 2.5 W
Linear Derating Factor 0.02 W/C
VGS Gate-to-Source Voltage 20 V
EAS Single Pulse Avalanche Energy d 370 mJ
dv/dt Peak Diode Recovery dv/dt e -5.0 V/ns
TJ Operating Junction and
-55 to + 150 C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Max. Units
RJA Junction-to-Ambient g 50 C/W

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Static Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 V VGS = 0V, ID = -250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient -0.024 V/C Reference to 25C, ID = -1mA
0.020 VGS = -10V, ID = -5.6A f
RDS(on) Static Drain-to-Source On-Resistance
0.035

VGS = -4.5V, ID = -2.8A f
VGS(th) Gate Threshold Voltage -1.0 -2.04 V VDS = VGS, ID = -250A
gfs Forward Transconductance 5.6 S VDS = -10V, ID = -2.8A
IDSS Drain-to-Source Leakage Current -1.0 VDS = -24V, VGS = 0V
A
-25 VDS = -24V, VGS = 0V, TJ = 125C
IGSS Gate-to-Source Forward Leakage -100 VGS = -20V
nA
Gate-to-Source Reverse Leakage 100 VGS = 20V
Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge 61 92 ID = -5.6A
Qgs Gate-to-Source Charge 8.0 12 nC VDS = -24V
Qgd Gate-to-Drain ("Miller") Charge 22 32 VGS = -10V, See Fig. 6 & 9 f
td(on) Turn-On Delay Time 18 VDD = -15V
tr Rise Time 49 ID = -5.6A
ns
td(off) Turn-Off Delay Time 59 RG = 6.2
tf Fall Time 60 RD = 2.7, See Fig. 10 f
Ciss Input Capacitance 1700 VGS = 0V
Coss Output Capacitance 890 pF VDS = -25V
Crss Reverse Transfer Capacitance 410 = 1.0MHz, See Fig. 5

Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

-3.1
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

(Body Diode) c -45

p-n junction diode. S

VSD Diode Forward Voltage -1.0 V TJ = 25C, IS = -5.6A, VGS = 0V e

trr Reverse Recovery Time 56 85 ns TJ = 25C,IF = -5.6A
Qrr Reverse Recovery Charge 99 150 nC di/dt = 100A/s e

Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25C, L = 25mH
RG = 25, IAS = -5.6A. (See Figure 12)
ISD -5.6A, di/dt 100A/s, VDD V(BR)DSS,
T J 150C
Pulse width 300s; duty cycle 2%.
Surface mounted on FR-4 board, t 10sec.

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100 100
VGS VGS
TOP - 15V TOP - 15V
- 10V - 10V
- 7.0V - 7.0V
- 5.5V - 5.5V

-I D , Drain-to-Source Current (A)

-I D , Drain-to-Source Current (A)

- 4.5V - 4.5V
- 4.0V - 4.0V
- 3.5V - 3.5V
BOTTOM - 3.0V BOTTOM - 3.0V

10 10

-3.0V

-3.0V

20s PULSE WIDTH 20s PULSE WIDTH

TJ = 25C TJ = 150C A
1 A 1
0.1 1 10 0.1 1 10
-VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 2.0
I D = -5.6A
R DS(on) , Drain-to-Source On Resistance
-ID , Drain-to-Source Current (A)

TJ = 25C 1.5

TJ = 150C
(Normalized)

10 1.0

0.5

VDS = -10V
20s PULSE WIDTH VGS = -10V
1 0.0 A
A
3.0 3.5 4.0 4.5 5.0 5.5 -60 -40 -20 0 20 40 60 80 100 120 140 160

-VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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4000 20
V GS = 0V, f = 1MHz I D = -5.6A
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd

-VGS , Gate-to-Source Voltage (V)

C oss = C ds + C gd VDS = -24V
16 VDS = -15V
3000
C, Capacitance (pF)

Ciss 12

2000 Coss

1000 Crss
4

FOR TEST CIRCUIT

SEE FIGURE 9
0 A 0 A
1 10 100 0 20 40 60 80 100
VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-ISD , Reverse Drain Current (A)

-IID , Drain Current (A)

100us
TJ = 150C

10 10
TJ = 25C
1ms

TA = 25 C 10ms
TJ = 150 C
VGS = 0V
Single Pulse
1 A 1
0.1 1 10 100
0.4 0.6 0.8 1.0 1.2
-VDS , Drain-to-Source Voltage (V)
-VSD , Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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RD
VDS
QG
V GS
D.U.T.
-10V QGS QGD RG -
+ VDD
VG
-10V
Pulse Width 1 s
Duty Factor 0.1 %
Charge

Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.

50K td(on) tr t d(off) tf

12V .2F VGS
.3F
10%
-

D.U.T. +VDS

VGS
90%
-3mA
VDS
IG ID
Current Sampling Resistors

Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms

100
Thermal Response (Z thJA )

D = 0.50

10 0.20

0.10

0.05

0.02 PDM
1
0.01 t1

SINGLE PULSE t2
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.1
0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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1000
ID

EAS , Single Pulse Avalanche Energy (mJ)

VDS L
TOP -2.5A
-4.5A
RG D.U.T 800 BOTTOM -5.6A
VDD
IAS A
-20V DRIVER
tp 0.01 600

400
15V

200
Fig 12a. Unclamped Inductive Test Circuit

I AS 0
25 50 75 100 125 150
Starting TJ , Junction Temperature (o C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

tp
V(BR)DSS

Fig 12b. Unclamped Inductive Waveforms

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Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
Low Stray Inductance
Ground Plane

Low Leakage Inductance
Current Transformer
-

+


- +
-

**
RG dv/dt controlled by RG +
ISD controlled by Duty Factor "D" *
VDD
-
D.U.T. - Device Under Test
VGS*

* Reverse Polarity for P-Channel

** Use P-Channel Driver for P-Channel Measurements

Driver Gate Drive

P.W.
Period D=
P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[ VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple 5% [ ISD]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 13. For P-Channel HEXFETS

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IRF7416GPbF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)

INCHES MILLIMET ERS

DIM
D B MIN MAX MIN MAX
A 5 A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
b .013 .020 0.33 0.51
8 7 6 5 c .0075 .0098 0.19 0.25
6 H D .189 .1968 4.80 5.00
E
0.25 [.010] A E .1497 .1574 3.80 4.00
1 2 3 4
e .050 BAS IC 1.27 BASIC
e1 .025 BAS IC 0.635 BAS IC
H .2284 .2440 5.80 6.20
K .0099 .0196 0.25 0.50
6X e
L .016 .050 0.40 1.27
y 0 8 0 8

e1 K x 45
A
C y

0.10 [.004]
8X b A1 8X L 8X c

0.25 [.010] C A B 7

FOOT PRINT
NOT ES:
8X 0.72 [.028]
1. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994.
2. CONT ROLLING DIMENSION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROTRUSIONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. 6.46 [.255]
MOLD PROTRUSIONS NOT T O EXCEED 0.25 [.010].
7 DIMENS ION IS T HE LENGTH OF LEAD F OR S OLDERING TO
A SUBST RAT E.

3X 1.27 [.050] 8X 1.78 [.070]

SO-8 Part Marking Information

EXAMPLE: THIS IS AN IRF8707GPBF

DAT E CODE (YWW)
P = DIS GNATES LEAD - FREE
PRODUCT
Y = LAS T DIGIT OF THE YEAR
XXXX WW = WEEK
INT ERNAT IONAL F8707G A = AS S EMBLY S IT E CODE
RECTIFIER LOT CODE
LOGO
PART NUMBER (G DES IGNAT ES
HALOGEN-FREE

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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 IRF7416GPbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)

TERMINAL NUMBER 1

12.3 ( .484 )
11.7 ( .461 )

8.1 ( .318 )
7.9 ( .312 ) FEED DIRECTION

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 101N.Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/2011
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