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EE-112 Basic Electronics Dr. Faraz Akram


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EE-112 Basic Electronics Dr. Faraz Akram


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The BJT is constructed with three doped semiconductor regions


separated by two pn junctions.
The three regions are called emitter, base, and collector.

The term bipolar refers to the


use of both holes and electrons
as current carriers in
the transistor structure.

npn pnp
EE-112 Basic Electronics Dr. Faraz Akram
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The Two Types of BJT Transistors:

npn pnp
E
n p n C E p n p C

C C
B B
B B

npn Symbol pnp Symbol


E E

EE-112 Basic Electronics Dr. Faraz Akram


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EE-112 Basic Electronics Dr. Faraz Akram


BJT Current - Equations 6

C C

+
-
VCB
VBC IC IC
-
IB -

+
+
IB
B VEC
B VCE
+

+
-
IE
IE VEB
VBE

+
- E
E
npn pnp
IE = IB + IC IE = IB + IC

EE-112 Basic Electronics Dr. Faraz Akram


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BJT for operation as an amplifier (forward-reverse bias):


BE junction is forward-biased
BC junction is reverse biased

EE-112 Basic Electronics Dr. Faraz Akram


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EE-112 Basic Electronics Dr. Faraz Akram


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The DC current gain of a transistor is the ratio of the dc


collector current ( ) to the dc base current ( ) and is
designated dc beta ( )
Typical values: 20 200
= In datasheet:

=

The ratio of the dc collector current ( ) to the dc emitter


current ( ) is the dc alpha ( ). The alpha is a less-used
parameter than beta in transistor circuits.

= Typical values: 0.95 0.99

EE-112 Basic Electronics Dr. Faraz Akram


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EE-112 Basic Electronics Dr. Faraz Akram


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Three transistor dc currents and three dc voltages can be


identified.

EE-112 Basic Electronics Dr. Faraz Akram


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When the base-emitter junction is
forward-biased, it is like a forward-
biased diode and has a nominal forward
voltage drop of

= 0.7

=
Also, by Ohms law,
= =
Substituting
=
=

=

EE-112 Basic Electronics Dr. Faraz Akram
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EE-112 Basic Electronics Dr. Faraz Akram


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EE-112 Basic Electronics Dr. Faraz Akram


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EE-112 Basic Electronics Dr. Faraz Akram


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EE-112 Basic Electronics Dr. Faraz Akram


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EE-112 Basic Electronics Dr. Faraz Akram


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EE-112 Basic Electronics Dr. Faraz Akram


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When = 0
Under this condition, there is a very small amount of collector
leakage current, , mainly due to thermally produced carriers.
Because is extremely small, it will usually be neglected in
circuit analysis so that = .

In cutoff, both BE and


BC junctions are
reversed bias

EE-112 Basic Electronics Dr. Faraz Akram


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Saturation Region:
When Both Junctions are
forward Bias

Active region
When BE junction is forward Bias
& BC junction reverse Bias

EE-112 Basic Electronics Dr. Faraz Akram


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EE-112 Basic Electronics Dr. Faraz Akram


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EE-112 Basic Electronics Dr. Faraz Akram


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EE-112 Basic Electronics Dr. Faraz Akram


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EE-112 Basic Electronics Dr. Faraz Akram


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EE-112 Basic Electronics Dr. Faraz Akram


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BJT as an Amplifier

EE-112 Basic Electronics Dr. Faraz Akram


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DC Uppercase Subscripts
, , , , , and

AC lowercase subscript
, , , , , and

EE-112 Basic Electronics Dr. Faraz Akram


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Amplification is the process of linearly increasing the


amplitude of an electrical signal and is one of the major
properties of a transistor.

EE-112 Basic Electronics Dr. Faraz Akram


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We know that Transistor


Amplifies current
=

The base current is very small


compared to collector and emitter
currents.

EE-112 Basic Electronics Dr. Faraz Akram


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The forward-biased BE-


junction presents a very
low resistance to the ac
signal.
This internal ac emitter
resistance is designated

Voltage gain:

= =

Since



EE-112 Basic Electronics Dr. Faraz Akram
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EE-112 Basic Electronics Dr. Faraz Akram


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EE-112 Basic Electronics Dr. Faraz Akram


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BJT as a Switch

EE-112 Basic Electronics Dr. Faraz Akram


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In part (a), the transistor is in the cutoff region because the BE-junction is not
forward-biased. In this condition, there is, ideally, an open between collector
and emitter,

()
() = () =

EE-112 Basic Electronics Dr. Faraz Akram


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EE-112 Basic Electronics Dr. Faraz Akram


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EE-112 Basic Electronics Dr. Faraz Akram


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EE-112 Basic Electronics Dr. Faraz Akram


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EE-112 Basic Electronics Dr. Faraz Akram


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EE-112 Basic Electronics Dr. Faraz Akram


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EE-112 Basic Electronics Dr. Faraz Akram


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EE-112 Basic Electronics Dr. Faraz Akram


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EE-112 Basic Electronics Dr. Faraz Akram

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