BD439/441

BD439/441
Medium Power Linear and Switching
Applications
Complement to BD440, BD442 respectively

1 TO-126
NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base

Absolute Maximum Ratings TC=25C unless otherwise noted

Symbol Parameter Value Units
VCBO Collector-Base Voltage
: BD439 60 V
: BD441 80 V
VCES Collector-Emitter Voltage
: BD439 60 V
: BD441 80 V
VCEO Collector-Emitter Voltage
: BD439 60 V
: BD441 80 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 4 A
ICP *Collector Current (Pulse) 7 A
IB Base Current 1 A
PC Collector Dissipation (TC=25C) 36 W
TJ Junction Temperature 150 C
TSTG Storage Temperature - 65 ~ 150 C

Electrical Characteristics TC=25C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) * Collector-Emitter Sustaining Voltage
: BD439 IC = 100mA, IB = 0 60 V
: BD441 80 V
ICBO Collector Cut-off Current : BD439 VCB = 60V, IE = 0 100 A
: BD441 VCB = 80V, IE = 0 100 A
ICES Collector Cut-off Current : BD439 VCE = 60V, VBE = 0 100 A
: BD441 VCE = 80V, VBE = 0 100 A
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 1 mA
hFE * DC Current Gain : BD439 VCE = 5V, IC = 10mA 20 130
: BD441 15 130
: BD439 VCE =1V, IC = 500mA 40 140
: BD441 40 140
: BD439 VCE = 1V, IC = 2A 25
: BD441 15
VCE(sat) * Collector-Emitter Saturation Voltage IC = 2A, IB = 0.2A 0.8 V
VBE(on) * Base-Emitter ON Voltage VCE = 5V, IC = 10mA 0.58 V
VCE = 1V, IC = 2A 1.5 V
fT Current Gain Bandwidth Product VCE = 1V, IC = 250mA 3 MHz
* Pulse Test: PW=300s, duty Cycle=1.5% Pulsed

2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

 BD439/441
Typical Characteristics

1000 1
VCE = 1V IC = 10 IB

VCE(sat)[V], SATURATION VOLTAGE

hFE, DC CURRENT GAIN

100

0.1

10

1 0.01
0.01 0.1 1 10 0.1 1 10

IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage

5.0 1000
CCBO(pF), COLLECTOR BASE CAPACITANCE
VCE = 1V
4.5

4.0
IC[A], COLLECTOR CURRENT

3.5
100
3.0

2.5

2.0

1.5 10

1.0

0.5

0.0
0.0 0.3 0.5 0.8 1.0 1.3 1.5 1.8 2.0 1
0.1 1 10 100

VBE[V], BASE-EMITTER VOLTAGE VCB[V], COLLECTOR BASE VOLTAGE

Figure 3. Base-Emitter On Voltage Figure 4. Collector-Base Capacitance

48

42
10
IC[A], COLLECTOR CURRENT

PC[W], POWER DISSIPATION

IC MAX. (Pulsed)
36
10 1s
ms 10
1m 0
s s 10 s
IC Max. (Continuous) 30
DC
24

1
18

12

6
BD439
BD441
0.1 0
1 10 100 0 25 50 75 100 125 150 175 200

o
VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE

Figure 5. Safe Operating Area Figure 6. Power Derating

2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

 BD439/441
Package Demensions

TO-126
0.10

8.00 0.30 3.25 0.20

3.90

0.20
14.20MAX

11.00
3.20 0.10

(1.00) (0.50)
0.75 0.10

1.75 0.20
1.60 0.10
0.20
0.30

0.75 0.10
16.10
13.06

#1 +0.10
2.28TYP 2.28TYP 0.50 0.05
[2.280.20] [2.280.20]

Dimensions in Millimeters

2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

2001 Fairchild Semiconductor Corporation Rev. H2