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PAKISTAN
LDMOS
Introduction of LDMOS
SAAD AFTAB
HASEEB AHMAD
Ali Khalid
This report was submitted as a part of Final Year Project Report, at School of Electrical
Engineering and Computer Sciences, National University of Sciences and Technology, Pakistan.
DOUBLE DIFFUSED MOSFET (DMOS):
The power MOSFETs require higher current capability which can’t be provided by
simple MOSFETs. In order to increase current (ID), Width (W) should be increased
and Length (L) should be decreased according to the relation:
To cater this problem, the transistors with shorter channel lengths and high
breakdown voltages are used. The device used is called DMOS (Double Diffused
Mosfet) or VDMOS (Vertical Double Diffused Mosfet) transistor.
STRUCTURE:
The device is fabricated on a lightly doped n-type substrate with a heavily doped
region at the bottom for the drain contact. Two diffusions are employed, one to
form the p-type body region and another to form the n-type source region.
WORKING:
When VGS greater than threshold voltage (Vt) is applied, it induces a lateral n-
channel in the p-type body region under the gate oxide indicated by L in diagram.
The current is conducted by the electrons from the source moving through the
resulting short channel to the substrate and then vertically down the substrate to
the drain.
Thus, DMOS although has short channel length but its breakdown voltage is as
high as 600V and has a current capability of 50A.
LDMOS
Laterally double Diffused MOSFET (LDMOS) transistor is widely used in high RF
power amplifiers below a few GHz. The LDMOS transistor is a modified type of the
MOSFET to enhance the high power capability. It is a high voltage transistor
design where the drain is designed to have a lower doped diffusion that allows it
to handle higher voltages without damage to the gate. There is a much larger
"Drift" region to support the higher voltages.
It has a low doped and long n type drift region, which enhances the
depletion region and increases the breakdown voltage. However the on-
resistance is high which increases the losses and degrade the RF
performance. Thus, there is always a trade-off between RF output power
and on-resistance.
It has a short channel length created by laterally diffused P-type
implantation, which increases the operating frequency.
The sinker principle is used to connect the source to the substrate backside,
which reduces the source inductance, hence, the gain increases.
Ldmos has a shield between gate and drain to reduce feedback capacitance
(Cgd) which increases the linearity.
ADVANTAGES OF LDMOS:
Thermal stability:
(Ref: AN1223 Application note RF power transistors: comparative study of LDMOS versus
bipolar technology)
(Ref: MTT 2001 “Vdmos vs. LDMOS How to Choose” by Polyfet RF Devices S. K. Leong)
CONCLUSION
LDMOS products are best suited for applications such as CDMA, W-CDMA, Digital
Terrestrial TV, polar transmitter architecture etc., requiring wide frequency range,
high linearity and good ruggedness performances.