Code No: 113AU Set No.

1
JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD
II B.Tech. I Sem., I Mid-Term Examinations, August 2015
ELCTRONIC DEVICES AND CIRCUITS
Objective Exam
Name: ______________________________ Hall Ticket No. A
Answer All Questions. All Questions Carry Equal Marks. Time: 20 Min. Marks: 10.

I Choose the correct alternative:

.IN
1. A __________ is a simplest semiconductor device [ ]
a) Diode b) resistor c) transistor d) UJT

2. An increase in temperature of a semiconductor results in ________________ of free electrons in the

material. [ ]

AL
a) Remains same b) slightly increases c) decreases d) substantially increases

3. The diffused impurities with _____ valence electrons are called acceptor atoms. [ ]
a) 0 b) 3 c) 4 d) 5

4.
a) 21.3% b) 40.6%
RT
The maximum efficiency of half wave rectifier is ______________________
c) 91.2% d) 50%
[ ]

5. Ripple of a capacitive filter ____________ as load resistance increases. [ ]

a) increases b) remains same c) decreases d) None
PO

6. Peak inverse voltage of centre tapped full wave rectifier is _____________. [ ]

a) Vm b) 2Vm c) 3Vm d) 0

7. In a transistor input pn junction is ____ biased and output pn junction is_______ biased. [ ]
a) forward, forward b) forward, reverse c) reverse, forward d) reverse, reverse
TU

8. Which of the following has a negative resistance region? [ ]

a) Diode b) BJT c) UJT d) All

9. ____________ diode is used in voltage regulation applications. [ ]

a) LED b) Tunnel c) Varactor d) Zener
JN

10. If Base is fed with input and output from collector then circuit is in ___________configuration. [ ]
a) Common Emitter b) Common base c) Common collector d) None

Cont2
Code No: 113AU :2: Set No. 1

II Fill in the Blanks

11. Reverse bias current increases with _________________ in temperature.

12. The forward characteristics of a diode grow in _______________ form.

.IN
13. In n type material ________________________ is called the majority carrier.

14. A Zener diode is a _________________ terminal device.

15. Ripple factor of a half wave rectifier is __________________.

AL
16. Bridge rectifier converts ________________ to ___________________.

17. ___________________ diode is called as voltage variable capacitor.

RT
18. Terminal names of a transistor are___________________,___________________&_______________.

19. Base current is ________________ of collector and emitter currents.

PO

20. In a transistor ___________________ is heavily doped.

-oOo-
TU
JN
Code No: 113AU Set No. 2
JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD
II B.Tech. I Sem., I Mid-Term Examinations, August 2015
ELCTRONIC DEVICES AND CIRCUITS
Objective Exam
Name: ______________________________ Hall Ticket No. A
Answer All Questions. All Questions Carry Equal Marks. Time: 20 Min. Marks: 10.

I Choose the correct alternative:

.IN
1. The maximum efficiency of half wave rectifier is ______________________ [ ]
a) 21.3% b) 40.6% c) 91.2% d) 50%

2. Ripple of a capacitive filter ____________ as load resistance increases. [ ]

a) increases b) remains same c) decreases d) None

AL
3. Peak inverse voltage of centre tapped full wave rectifier is _____________. [ ]
a) Vm b) 2Vm c) 3Vm d) 0

4. In a transistor input pn junction is ____ biased and output pn junction is_______ biased.
RT [ ]
a) forward, forward b) forward, reverse c) reverse, forward d) reverse, reverse

5. Which of the following has a negative resistance region? [ ]

a) Diode b) BJT c) UJT d) All
PO

6. ____________ diode is used in voltage regulation applications. [ ]

a) LED b) Tunnel c) Varactor d) Zener

7. If Base is fed with input and output from collector then circuit is in ___________configuration. [ ]
a) Common Emitter b) Common base c) Common collector d) None
TU

8. A __________ is a simplest semiconductor device [ ]

a) Diode b) resistor c) transistor d) UJT

9. An increase in temperature of a semiconductor results in ________________ of free electrons in the

material. [ ]
a) Remains same b) slightly increases c) decreases d) substantially increases
JN

10. The diffused impurities with _____ valence electrons are called acceptor atoms. [ ]
a) 0 b) 3 c) 4 d) 5

Cont2
Code No: 113AU :2: Set No. 2

II Fill in the Blanks

11. A Zener diode is a _________________ terminal device.

12. Ripple factor of a half wave rectifier is __________________.

.IN
13. Bridge rectifier converts ________________ to ___________________.

14. ___________________ diode is called as voltage variable capacitor.

15. Terminal names of a transistor are___________________,___________________&_______________.

AL
16. Base current is ________________ of collector and emitter currents.

17. In a transistor ___________________ is heavily doped.

RT
18. Reverse bias current increases with _________________ in temperature.

19. The forward characteristics of a diode grow in _______________ form.

PO

20. In n type material ________________________ is called the majority carrier.

-oOo-
TU
JN
Code No: 113AU Set No. 3
JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD
II B.Tech. I Sem., I Mid-Term Examinations, August 2015
ELCTRONIC DEVICES AND CIRCUITS
Objective Exam
Name: ______________________________ Hall Ticket No. A
Answer All Questions. All Questions Carry Equal Marks. Time: 20 Min. Marks: 10.

I Choose the correct alternative:

.IN
1. Peak inverse voltage of centre tapped full wave rectifier is _____________. [ ]
a) Vm b) 2Vm c) 3Vm d) 0

2. In a transistor input pn junction is ____ biased and output pn junction is_______ biased. [ ]
a) forward, forward b) forward, reverse c) reverse, forward d) reverse, reverse

AL
3. Which of the following has a negative resistance region? [ ]
a) Diode b) BJT c) UJT d) All

4. ____________ diode is used in voltage regulation applications.

RT [ ]
a) LED b) Tunnel c) Varactor d) Zener

5. If Base is fed with input and output from collector then circuit is in ___________configuration. [ ]
a) Common Emitter b) Common base c) Common collector d) None
PO

6. A __________ is a simplest semiconductor device [ ]

a) Diode b) resistor c) transistor d) UJT

7. An increase in temperature of a semiconductor results in ________________ of free electrons in the

material. [ ]
a) Remains same b) slightly increases c) decreases d) substantially increases
TU

8. The diffused impurities with _____ valence electrons are called acceptor atoms. [ ]
a) 0 b) 3 c) 4 d) 5

9. The maximum efficiency of half wave rectifier is ______________________ [ ]

a) 21.3% b) 40.6% c) 91.2% d) 50%
JN

10. Ripple of a capacitive filter ____________ as load resistance increases. [ ]

a) increases b) remains same c) decreases d) None

Cont2
Code No: 113AU :2: Set No. 3

II Fill in the Blanks

11. Bridge rectifier converts ________________ to ___________________.

12. ___________________ diode is called as voltage variable capacitor.

.IN
13. Terminal names of a transistor are___________________,___________________&_______________.

14. Base current is ________________ of collector and emitter currents.

15. In a transistor ___________________ is heavily doped.

AL
16. Reverse bias current increases with _________________ in temperature.

17. The forward characteristics of a diode grow in _______________ form.

RT
18. In n type material ________________________ is called the majority carrier.

19. A Zener diode is a _________________ terminal device.

PO

20. Ripple factor of a half wave rectifier is __________________.

TU

-oOo-
JN
Code No: 113AU Set No. 4
JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD
II B.Tech. I Sem., I Mid-Term Examinations, August 2015
ELCTRONIC DEVICES AND CIRCUITS
Objective Exam
Name: ______________________________ Hall Ticket No. A
Answer All Questions. All Questions Carry Equal Marks. Time: 20 Min. Marks: 10.

I Choose the correct alternative:

.IN
1. Which of the following has a negative resistance region? [ ]
a) Diode b) BJT c) UJT d) All

2. ____________ diode is used in voltage regulation applications. [ ]

AL
a) LED b) Tunnel c) Varactor d) Zener

3. If Base is fed with input and output from collector then circuit is in ___________configuration. [ ]
a) Common Emitter b) Common base c) Common collector d) None

4.
a) Diode b) resistor
RT
A __________ is a simplest semiconductor device
c) transistor d) UJT
[ ]

5. An increase in temperature of a semiconductor results in ________________ of free electrons in the

material. [ ]
PO

a) Remains same b) slightly increases c) decreases d) substantially increases

6. The diffused impurities with _____ valence electrons are called acceptor atoms. [ ]
a) 0 b) 3 c) 4 d) 5

7. The maximum efficiency of half wave rectifier is ______________________ [ ]

TU

a) 21.3% b) 40.6% c) 91.2% d) 50%

8. Ripple of a capacitive filter ____________ as load resistance increases. [ ]

a) increases b) remains same c) decreases d) None

9. Peak inverse voltage of centre tapped full wave rectifier is _____________. [ ]

JN

a) Vm b) 2Vm c) 3Vm d) 0

10. In a transistor input pn junction is ____ biased and output pn junction is_______ biased. [ ]
a) forward, forward b) forward, reverse c) reverse, forward d) reverse, reverse

Cont2
Code No: 113AU :2: Set No. 4

II Fill in the Blanks

11. Terminal names of a transistor are___________________,___________________&_______________.

12. Base current is ________________ of collector and emitter currents.

.IN
13. In a transistor ___________________ is heavily doped.

14. Reverse bias current increases with _________________ in temperature.

AL
15. The forward characteristics of a diode grow in _______________ form.

16. In n type material ________________________ is called the majority carrier.

17. A Zener diode is a _________________ terminal device.

RT
18. Ripple factor of a half wave rectifier is __________________.

19. Bridge rectifier converts ________________ to ___________________.

PO

20. ___________________ diode is called as voltage variable capacitor.

TU

-oOo-
JN