PD - 95042

IRF7329PbF
HEXFET Power MOSFET
l Trench Technology VDSS RDS(on) max (mW) ID
l Ultra Low On-Resistance
17@VGS = -4.5V 9.2A
l Dual P-Channel MOSFET
-12V 21@VGS = -2.5V 7.4A
l Low Profile (<1.8mm)
l Available in Tape & Reel 30@VGS = -1.8V 4.6A

l Lead-Free

Description
New P-Channel HEXFET power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per 1 8
S1 D1
silicon area. This benefit, combined with the ruggedized
device design that HEXFET Power MOSFETs are well G1 2 7
D1
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications. S2
3 6
D2
4 5
The SO-8 has been modified through a customized G2 D2
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of Top View SO-8
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.

Absolute Maximum Ratings

Parameter Max. Units
VDS Drain- Source Voltage -12 V
ID @ TA = 25C Continuous Drain Current, VGS @ -4.5V -9.2
ID @ TA= 70C Continuous Drain Current, VGS @ -4.5V -7.4 A
IDM Pulsed Drain Current -37
PD @TA = 25C Power Dissipation 2.0
W
PD @TA = 70C Power Dissipation 1.3
Linear Derating Factor 16 mW/C
VGS Gate-to-Source Voltage 8.0 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 C

Thermal Resistance
Symbol Parameter Typ. Max. Units
RJL Junction-to-Drain Lead 20
RJA Junction-to-Ambient 62.5 C/W

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Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -12 V VGS = 0V, ID = -250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.007 V/C Reference to 25C, I D = -1mA
RDS(on) Static Drain-to-Source On-Resistance 17 VGS = -4.5V, ID = -9.2A
21 m VGS = -2.5V, ID = -7.4A
30 VGS = -1.8V, ID = -4.6A
VGS(th) Gate Threshold Voltage -0.40 -0.90 V VDS = VGS, ID = -250A
gfs Forward Transconductance 25 S VDS = -10V, ID = -9.2A
IDSS Drain-to-Source Leakage Current -1.0 A VDS = -9.6V, VGS = 0V
-25 VDS = -9.6V, VGS = 0V, TJ = 70C
Gate-to-Source Forward Leakage -100 nA VGS = -8.0V
IGSS
Gate-to-Source Reverse Leakage 100 VGS = 8.0V
Qg Total Gate Charge 38 57 ID = -9.2A
Qgs Gate-to-Source Charge 6.8 10 nC VDS = -6.0V
Qgd Gate-to-Drain ("Miller") Charge 8.1 12 VGS = -4.5V
td(on) Turn-On Delay Time 10 ns V DD = -6.0V
tr Rise Time 8.6 ID = -1.0A
td(off) Turn-Off Delay Time 340 RD = 6.0
tf Fall Time 260 VGS = -4.5V
Ciss Input Capacitance 3450 VGS = 0V
Coss Output Capacitance 1000 pF VDS = -10V
Crss Reverse Transfer Capacitance 640 = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

-2.0
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
-37
(Body Diode) p-n junction diode. S

VSD Diode Forward Voltage -1.2 V TJ = 25C, IS = -2.0A, VGS = 0V

trr Reverse Recovery Time 50 75 ns TJ = 25C, IF = -2.0A
Qrr Reverse Recovery Charge 48 72 nC di/dt = -100A/s

Notes:
Repetitive rating; pulse width limited by When mounted on 1 inch square copper board.
max. junction temperature.
Pulse width 400s; duty cycle 2%.

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 IRF7329PbF

100 VGS
100
VGS
TOP -10V TOP -10V
-7.0V -7.0V
-4.5V -4.5V

-I D , Drain-to-Source Current (A)

-I D , Drain-to-Source Current (A)

-3.0V -3.0V
-2.5V -2.5V
-1.8V -1.8V
-1.5V -1.5V
BOTTOM -1.2V BOTTOM -1.2V
10

10

1
-1.2V
-1.2V

20s PULSE WIDTH 20s PULSE WIDTH

TJ = 25 C TJ = 150 C
0.1 1
0.1 1 10 0.1 1 10
-VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

2.0
100 ID = -9.2A
RDS(on) , Drain-to-Source On Resistance
-I D, Drain-to-Source Current ()

1.5
(Normalized)

T J = 150C
10 1.0

T J = 25C 0.5

VDS = -10V
20s PULSE WIDTH VGS = -4.5V
1 0.0
1.0 1.4 1.8 2.2 -60 -40 -20 0 20 40 60 80 100 120 140 160

-VGS, Gate-to-Source Voltage (V)

TJ , Junction Temperature ( C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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IRF7329PbF

5000 10
VGS = 0V, f = 1 MHZ ID = -9.2A
Ciss = Cgs + Cgd, Cds SHORTED VDS =-9.6V

-VGS , Gate-to-Source Voltage (V)

Crss = Cgd
VDS =-6V
4000 8
Coss = Cds + Cgd
Ciss
C, Capacitance(pF)

3000 6

2000 4
Coss

1000 Crss 2

0 0
1 10 100 0 10 20 30 40 50 60 70

-V DS, Drain-to-Source Voltage (V)

QG , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-ISD , Reverse Drain Current (A)

100us
-II D , Drain Current (A)

10

TJ = 150 C
10 1ms

1
TJ = 25 C
10ms

TA = 25 C
TJ = 150 C
V GS = 0 V Single Pulse
0.1 1
0.2 0.4 0.6 0.8 1.0 0.1 1 10 100
-VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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 IRF7329PbF

10.0 RD
VDS

VGS
8.0 D.U.T.
RG
-ID , Drain Current (A)

-
+ VDD
6.0
VGS
Pulse Width 1 s
Duty Factor 0.1 %
4.0

Fig 10a. Switching Time Test Circuit

2.0
td(on) tr t d(off) tf
VGS
0.0 10%
25 50 75 100 125 150
TC , Case Temperature ( C)

90%
Fig 9. Maximum Drain Current Vs. VDS
Case Temperature
Fig 10b. Switching Time Waveforms

100

D = 0.50
Thermal Response (Z thJA )

0.20
10
0.10

0.05

0.02 PDM
1
0.01 t1
t2

SINGLE PULSE Notes:

(THERMAL RESPONSE) 1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF7329PbF

0.030
RDS(on) , Drain-to -Source On Resistance ()

0.030

RDS (on) , Drain-to-Source On Resistance ()

0.025

0.025 VGS = -1.8V

0.020

0.020
ID = -9.2A
VGS = -2.5V
0.015

0.015
VGS = -4.5V
0.010
0.0 2.0 4.0 6.0 8.0
0.010
-V GS, Gate -to -Source Voltage (V) 4 6 8 10 12 14
-I D , Drain Current (A)
Fig 12. Typical On-Resistance Vs. Fig 13. Typical On-Resistance Vs.
Gate Voltage Drain Current

Current Regulator
Same Type as D.U.T.

50K
QG 12V .2F
.3F
-
QGS QGD D.U.T. +VDS

VGS
VG
-3mA

IG ID
Charge Current Sampling Resistors

Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit

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 IRF7329PbF

1.0

100
-VGS(th) Gate threshold Voltage (V)

0.8
80

ID = -250A
60

Power (W)
0.6

40
0.4

20

0.2
-75 -50 -25 0 25 50 75 100 125 150
0
T J , Temperature ( C ) 0.001 0.010 0.100 1.000 10.000 100.000

Time (sec)
Fig 16. Typical Power Vs. Time
Fig 15. Typical Vgs(th) Vs.
Junction Temperature

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IRF7329PbF

SO-8 Package Outline

Dimensions are shown in milimeters (inches)
INCHES MILLIMET ERS
DIM
D B MIN MAX MIN MAX
A 5 A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
b .013 .020 0.33 0.51
8 7 6 5 c .0075 .0098 0.19 0.25
6 H D .189 .1968 4.80 5.00
E
0.25 [.010] A E .1497 .1574 3.80 4.00
1 2 3 4
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BAS IC
H .2284 .2440 5.80 6.20
K .0099 .0196 0.25 0.50
6X e
L .016 .050 0.40 1.27
y 0 8 0 8

e1 K x 45
A
C
y

0.10 [.004]
8X b A1 8X L 8X c

0.25 [.010] C A B 7

FOOT PRINT
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMETER
3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006].
6.46 [.255]
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010].
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING T O
A S UBS T RAT E.

3X 1.27 [.050] 8X 1.78 [.070]

SO-8 Part Marking Information (Lead-Free)

EXAMPLE: T HIS IS AN IRF7101 (MOSFET )

DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF T HE YEAR
XXXX WW = WEEK
INT ERNAT IONAL F 7101 A = AS SEMBLY S IT E CODE
RECT IFIER LOT CODE
LOGO
PART NUMBER

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SO-8 Tape and Reel

Dimensions are shown in milimeters (inches)

TERMINAL NUMBER 1

12.3 ( .484 )
11.7 ( .461 )

8.1 ( .318 )
7.9 ( .312 ) FEED DIRECTION

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04
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Mouser Electronics

Authorized Distributor

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