DTE2311

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P-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY FEATURES

VDS (V) RDS(on) () ID (A) Halogen-free
0.045 at VGS = - 4.5 V - 4.2
- 20
0.072 at VGS = - 2.5 V - 3.6
RoHS
COMPLIANT

S*
TO-226AA
(TO-92)

S 1
G

G 2

D 3 D

Top View P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage VDS - 20
V
Gate-Source Voltage VGS 12
TA = 25 C - 4.2 - 4.0
Continuous Drain Current (TJ = 150 C)a ID
TA = 70 C - 3.9 - 3.2
A
Pulsed Drain Current (10 s Pulse Width) IDM - 20
Continuous Source Current (Diode Conduction)a IS - 1.35 - 0.95
TA = 25 C 1.5 1.05
Maximum Power Dissipationa PD W
TA = 70 C 1.0 0.67
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
t 10 s 65 83
Maximum Junction-to-Ambienta RthJA
Steady State 100 120 C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 43 52
Notes:
a. Surface Mounted on 1" x 1" FR4 board.

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SPECIFICATIONS TJ = 25 C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 A - 0.6 - 1.5 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = 8 V 100 nA
VDS = - 12 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS A
VDS = - 12 V, VGS = 0 V, TJ = 70 C - 25
On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 4.5 V - 20 A
VGS = - 4.5 V, ID = - 4.2 A 0.032 0.045
Drain-Source On-State Resistancea RDS(on)
VGS = - 2.5 V, ID = - 3.6 A 0.053 0.072
Forward Transconductancea gfs VDS = - 5 V, ID = - 4.2 A 14 S
a VSD IS = - 1.35 A, VGS = 0 V - 0.77 - 1.1 V
Diode Forward Voltage
b
Dynamic
Total Gate Charge Qg 10 15
Gate-Source Charge Qgs VDS = - 6 V, VGS = - 4.5 V, ID = - 4.2 A 1.8 nC
Gate-Drain Charge Qgd 3
Gate Resistance Rg f = 1 MHz 7.7
Turn-On Delay Time td(on) 45 70
Rise Time tr VDD = - 6 V, RL = 6 60 90
Turn-Off Delay Time td(off) ID - 1 A, VGEN = - 4.5 V, Rg = 6 70 110 ns
Fall Time tf 35 55
Source-Drain Reverse Recovery Time trr IF = - 1.35 A, di/dt = 100 A/s 65
Notes:
a. Pulse test; pulse width 300 s, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 C, unless otherwise noted

20 20

VGS = 4.5 thru 3 V

16 16

2.5 V
I D - Drain Current (A)

I D - Drain Current (A)

12 12

8 8

2V TC = 125 C
4 4
25 C
- 55 C
0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

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TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
0.10 1500

0.08 1200

C - Capacitance (pF)
V GS = 2.5 V Ciss

0.06 900

0.04 VGS = 4.5 V 600

RDS(on) -

Coss
0.02 300
Crss

0.00 0
0 4 8 12 16 20 0 2 4 6 8 10 12

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

6 1.6

VDS = 6 V VGS = 4.5 V

ID = 4.8 A
V GS - Gate-to-Source Voltage (V)

ID = 4.8 A
5 1.4
R DS(on) - On-Resistance

4
(Normalized)

1.2

3
1.0
2

0.8
1

0 0.6
0 3 6 9 12 15 - 50 - 25 0 25 50 75 100 125 150

Qg - Total Gate Charge (nC) TJ - Junction Temperature (C)

Gate Charge On-Resistance vs. Junction Temperature

0.15
10

0.12
R DS(on) - On-Resistance ()
I S - Source Current (A)

TJ = 150 C

0.09 ID = 4.8 A
TJ = 25 C
1

0.06

0.03

0.1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6

VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

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TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
0.4 50

0.3
40
V GS(th) Variance (V)

0.2 ID = 250 A
30

Power (W)
0.1

20
0.0

- 0.1 10

- 0.2 0
- 50 - 25 0 25 50 75 100 125 150 10-3 10-2 10-1 1 10
TJ - Temperature (C) Time (s)
Threshold Voltage Single Pulse Power, Junction-to-Ambient

100

10 Limited
by R DS(on) * 1 ms
ID - Drain Current (A)

1 10 ms

100 ms

1s
0.1 10 s
TC = 25 C
DC
Single Pulse

0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which R DS(on) is specified
Safe Operating Area, Junction-to-Case

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 100 C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

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TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
2

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot

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Mechanical Dimensions

TO-92
+0.25
4.58 0.15

4.58 0.20
0.46 0.10
14.47 0.40

+0.10
1.27TYP 1.27TYP 0.38 0.05
[1.27 0.20] [1.27 0.20]

3.60 0.20
3.86MAX

(0.25)
+0.10
0.38 0.05
1.02 0.10

(R2.29)

Dimensions in Millimeters

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