NX138AK: 1. General Description

NX138AK
3
T2
SO
60 V, N-channel Tench MOSFET
10 June 2016 Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits

Low threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection
3. Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data

Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj = 25 C - - 60 V
VGS gate-source voltage -20 - 20 V
ID drain current VGS = 10 V; Tamb = 25 C [1] - - 190 mA
Static characteristics
RDSon drain-source on-state VGS = 10 V; ID = 190 mA; Tj = 25 C - 3 4.5
resistance
2
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm .
NXP Semiconductors NX138AK
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate 3 D
2 S source
3 D drain G
1 2
TO-236AB (SOT23)
S
017aaa255
6. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
NX138AK TO-236AB plastic surface-mounted package; 3 leads SOT23
7. Marking
Table 4. Marking codes
Type number Marking code[1]
NX138AK AP%
[1] % = placeholder for manufacturing site code
NX138AK All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2016. All rights reserved
Product data sheet 10 June 2016 2 / 15

8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj = 25 C - 60 V
VGS gate-source voltage -20 20 V
ID drain current VGS = 10 V; Tamb = 25 C [1] - 190 mA
VGS = 10 V; Tamb = 100 C [1] - 120 mA
IDM peak drain current Tamb = 25 C; single pulse; tp 10 s - 765 mA
Ptot total power dissipation Tamb = 25 C [2] - 265 mW
[1] - 325 mW
Tsp = 25 C - 1.33 W
Tj junction temperature -55 150 C
Tamb ambient temperature -55 150 C
Tstg storage temperature -65 150 C
Source-drain diode
IS source current Tamb = 25 C [1] - 190 mA
2
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm .
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
017aaa123 017aaa124
120 120
Pder Ider
(%) (%)
80 80
40 40
0 0
- 75 - 25 25 75 125 175 - 75 - 25 25 75 125 175
Tj (C) Tj (C)
Fig. 1. Normalized total power dissipation as a function Fig. 2. Normalized continuous drain current as a
of junction temperature function of junction temperature

aaa-023297
1
tp =
10 s
ID
(A)
Limit RDSon = VDS/ID 100 s
10-1
1 ms
DC; Tsp = 25 C 10 ms
DC; Tamb = 25 C; 100 ms

10-2 drain mounting pad 1 cm2
10-3
10-1 1 10 102
VDS (V)
IDM = single pulse

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Rth(j-a) thermal resistance in free air [1] - 410 470 K/W
from junction to
[2] - 330 380 K/W
ambient
Rth(j-sp) thermal resistance - 80 95 K/W
from junction to solder
point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm .

aaa-023298
103
duty cycle = 1
Zth(j-a)
(K/W) 0.75
0.50
0.33
0.25
102 0.20
0.10
0.05
0.02
0.01
0
10
10-3 10-2 10-1 1 10 102 103
tp (s)
FR4 PCB, standard footprint

Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-023299
103
Zth(j-a) duty cycle = 1

(K/W)
0.75
0.50
0.33
0.25
102 0.20
0.10
0.05
0.02
0.01
0
10
10-3 10-2 10-1 1 10 102 103
tp (s)
2
FR4 PCB, mounting pad for drain 1 cm
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

10. Characteristics
Table 7. Characteristics
Static characteristics
V(BR)DSS drain-source ID = 250 A; VGS = 0 V; Tj = 25 C 60 - - V
breakdown voltage
VGSth gate-source threshold ID = 250 A; VDS=VGS; Tj = 25 C 0.8 1.1 1.5 V
voltage
IDSS drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 C - - 1 A
IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 C - - 2 A
VGS = -20 V; VDS = 0 V; Tj = 25 C - - -2 A
VGS = 10 V; VDS = 0 V; Tj = 25 C - - 0.5 A
VGS = -10 V; VDS = 0 V; Tj = 25 C - - -0.5 A
VGS = 5 V; VDS = 0 V; Tj = 25 C - - 100 nA
VGS = -5 V; VDS = 0 V; Tj = 25 C - - -100 nA
RDSon drain-source on-state VGS = 10 V; ID = 190 mA; Tj = 25 C - 3 4.5
resistance
VGS = 10 V; ID = 190 mA; Tj = 150 C - 6 9
VGS = 5 V; ID = 170 mA; Tj = 25 C - 4 5.2
VGS = 2.5 V; ID = 130 mA; Tj = 25 C - 5 10
gfs forward VDS = 10 V; ID = 180 mA; Tj = 25 C - 3.5 - S
transconductance
Dynamic characteristics
QG(tot) total gate charge VDS = 30 V; ID = 190 mA; VGS = 10 V; - 0.9 1.4 nC
Tj = 25 C
QGS gate-source charge - 0.1 - nC
QGD gate-drain charge - 0.2 - nC
Ciss input capacitance VDS = 30 V; f = 1 MHz; VGS = 0 V; - 15 20 pF
Tj = 25 C
Coss output capacitance - 2.3 - pF
Crss reverse transfer - 1.5 - pF
capacitance
td(on) turn-on delay time VDS = 30 V; ID = 190 mA; VGS = 10 V; - 8 12 ns
RG(ext) = 75 ; Tj = 25 C
tr rise time - 10 - ns
td(off) turn-off delay time - 8 20 ns
tf fall time - 5 - ns
Source-drain diode
VSD source-drain voltage IS = 190 mA; VGS = 0 V; Tj = 25 C - 0.8 1.2 V

aaa-023300 aaa-023301
0.8 10-3
10 V
ID 4.5 V
(A) ID
3.5 V (A)
0.6
3.0 V min typ max
10-4
0.4
2.6 V
10-5
0.2 VGS = 2.2 V
0 10-6
0 1 2 3 4 0 0.5 1 1.5 2
VDS (V) VGS (V)
Tj = 25 C VDS = 5 V
Tj = 25 C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values Fig. 7. Sub-threshold drain current as a function of gate-
source voltage
aaa-023302 aaa-023303
7 8
RDSon RDSon
() 2.6 V 3.0 V ()
6 7
6
5 Tj = 150 C
5
4
4
3
3.2 V 3 Tj = 25 C
3.5 V
2 4.5 V
2
VGS = 10 V
1 1
0 0
0 0.2 0.4 0.6 0.8 0 5 10 15 20
ID (A) VGS (V)
Tj = 25 C ID = 190 mA
Fig. 8. Drain-source on-state resistance as a function of Fig. 9. Drain-source on-state resistance as a function of
drain current; typical values gate-source voltage; typical values

aaa-023304 aaa-023305
0.4 2.5
ID a
(A)
2
1.5
0.2
1
Tj = 150 C Tj = 25 C
0.5
0 0
0 1 2 3 4 -60 0 60 120 180
VGS (V) Tj (C)
VDS > ID x RDSon

Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values Fig. 11. Normalized drain-source on-state resistance as
a function of junction temperature; typical values
aaa-023306 aaa-023307
2 102
VGS(th)
(V)
C
1.5 max (pF)
Ciss
typ
1 10
min
0.5
Coss
Crss
0 1
-60 0 60 120 180 10-1 1 10 102
Tj (C) VDS (V)
ID = 250 A; VDS = VGS f = 1 MHz; VGS = 0 V

Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances
junction temperature as a function of drain-source voltage; typical values

aaa-023308
10
VDS
VGS
(V)
ID
8
VGS(pl)
6
VGS(th)
4 VGS
QGS2
QGS1
2 QGS QGD
QG(tot)
003aaa508
0 Fig. 15. MOSFET transistor: Gate charge waveform

0 0.2 0.4 0.6 0.8 1
QG (nC) definitions
VDS = 30 V; ID = 0.9 A
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-023309
0.2
IS
(A)
0.1
Tj = 150 C Tj = 25 C
0
0 0.4 0.8 1.2
VSD (V)
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
P t1
duty cycle =
t2 t2
t1
t
006aaa812
Fig. 17. Duty cycle definition

12. Package outline

Plastic surface-mounted package; 3 leads SOT23
D B E A X
HE v A
A1
1 2 c
e1 bp w B Lp
e
detail X
0 1 2 mm
scale
Dimensions (mm are the original dimensions)
Unit A A1 bp c D E e e1 HE Lp Q v w
max 1.1 0.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55
mm nom 1.9 0.95 0.2 0.1
min 0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45
sot023_po
Outline References European

Issue date
version IEC JEDEC JEITA projection
14-06-19
SOT23 TO-236AB 14-09-22
Fig. 18. Package outline TO-236AB (SOT23)

13. Soldering
3.3
2.9
1.9
solder lands
solder resist
3 1.7 2
solder paste
0.7 0.6 occupied area

(3) (3)
Dimensions in mm
0.5
(3)
0.6
(3)
1 sot023_fr
Fig. 19. Reflow soldering footprint for TO-236AB (SOT23)

2.2
1.2
(2)
1.4
(2)
solder lands
4.6 2.6 solder resist
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5 sot023_fw
Fig. 20. Wave soldering footprint for TO-236AB (SOT23)

14. Revision history

Table 8. Revision history
Data sheet ID Release date Data sheet status Change notice Supersedes
NX138AK v.2 20160610 Product data sheet - NX138AK v.1
Modifications:
Title changed for figures 11 and 12 to juction temperature
NX138AK v.1 20160607 Product data sheet - -

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16. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................ 6
11. Test information......................................................... 9
12. Package outline........................................................ 10
13. Soldering................................................................... 11
14. Revision history........................................................12
15. Legal information..................................................... 13
NXP Semiconductors N.V. 2016. All rights reserved

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 10 June 2016

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2. Features and benefits

4. Quick reference data

[1] % = placeholder for manufacturing site code

Product data sheet 10 June 2016 2 / 15

Product data sheet 10 June 2016 3 / 15

DC; Tamb = 25 C; 100 ms

IDM = single pulse

Product data sheet 10 June 2016 4 / 15

FR4 PCB, standard footprint

Zth(j-a) duty cycle = 1

Product data sheet 10 June 2016 5 / 15

Product data sheet 10 June 2016 6 / 15

Product data sheet 10 June 2016 7 / 15

VDS > ID x RDSon

ID = 250 A; VDS = VGS f = 1 MHz; VGS = 0 V

Product data sheet 10 June 2016 8 / 15

0 Fig. 15. MOSFET transistor: Gate charge waveform

11. Test information

Fig. 17. Duty cycle definition

Product data sheet 10 June 2016 9 / 15

12. Package outline

Dimensions (mm are the original dimensions)

Outline References European

Fig. 18. Package outline TO-236AB (SOT23)

Product data sheet 10 June 2016 10 / 15

0.7 0.6 occupied area

Fig. 19. Reflow soldering footprint for TO-236AB (SOT23)

4.6 2.6 solder resist

preferred transport direction during soldering

Fig. 20. Wave soldering footprint for TO-236AB (SOT23)

Product data sheet 10 June 2016 11 / 15

14. Revision history

NX138AK v.1 20160607 Product data sheet - -

Product data sheet 10 June 2016 12 / 15

Product data sheet 10 June 2016 13 / 15

Product data sheet 10 June 2016 14 / 15

NXP Semiconductors N.V. 2016. All rights reserved

Product data sheet 10 June 2016 15 / 15

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