Power Transistors

2SD1273, 2SD1273A
Silicon NPN triple diffusion planar type

For power amplification with high forward current transfer ratio

Unit: mm
Complementary to 2SB1299
10.00.2 4.20.2

0.70.1
5.50.2 2.70.2

Features

4.20.2
7.50.2
High foward current transfer ratio hFE
3.10.1

16.70.3
Satisfactory linearity of foward current transfer ratio hFE
Full-pack package which can be installed to the heat sink with
one screw
1.30.2

4.0
Absolute Maximum Ratings
1.40.1
(TC=25C)

14.00.5
Solder Dip
0.5 +0.2
0.1
Parameter Symbol Ratings Unit 0.80.1

Collector to 2SD1273 80
VCBO V 2.540.25
base voltage 2SD1273A 100
Collector to 2SD1273 60 5.080.5
VCEO V 1 2 3
emitter voltage 2SD1273A 80
1:Base
Emitter to base voltage VEBO 6 V 2:Collector
3:Emitter
Peak collector current ICP 6 A
TO220 Full Pack Package(a)
Collector current IC 3 A
Base current IB 1 A
Collector power TC=25C 40
PC W
dissipation Ta=25C 2
Junction temperature Tj 150 C
Storage temperature Tstg 55 to +150 C

Electrical Characteristics (TC=25C)

Parameter Symbol Conditions min typ max Unit
Collector cutoff 2SD1273 VCB = 80V, IE = 0 100
ICBO A
current 2SD1273A VCB = 100V, IE = 0 100
Collector cutoff current ICEO VCE = 40V, IB = 0 100 A
Emitter cutoff current IEBO VCB = 6V, IC = 0 100 A
Collector to emitter 2SD1273 60
VCEO IC = 25mA, IB = 0 V
voltage 2SD1273A 80
Forward current transfer ratio hFE* VCE = 4V, IC = 0.5A 500 2500
Collector to emitter saturation voltage VCE(sat) IC = 2A, IB = 0.05A 1 V
Transition frequency fT VCE = 12V, IC = 0.2A, f = 10MHz 50 MHz

*h Rank classification
FE

Rank Q P O
hFE 500 to 1000 800 to 1500 1200 to 2500

Note: Ordering can be made by the common rank (PQ rank hFE = 500 to 1500) in the rank classification.

1
Free Datasheet http://www.datasheet4u.com/
Power Transistors 2SD1273, 2SD1273A

PC Ta IC VCE IC VBE
50 1.0 5
(1) TC=Ta IB=1.2mA TC=25C
(2) With a 100 100 2mm
Collector power dissipation PC (W)

(1) Al heat sink 1.0mA

40 (3) With a 50 50 2mm 0.8 4

Collector current IC (A)

Collector current IC (A)

Al heat sink
0.7mA
(4) Without heat sink
(PC=2W) 0.6mA TC=100C
30 0.6 3
0.5mA

0.4mA
25C
20 0.4 2
0.3mA
25C
(2) 0.2mA
10 0.2 1
(3) 0.1mA
(4)
0 0 0
0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1.0 1.2
Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V)

VCE(sat) IC hFE IC fT IC
100 10000 10000
Collector to emitter saturation voltage VCE(sat) (V)

IC/IB=40 VCE=4V VCE=12V

f=10MHz
Forward current transfer ratio hFE

30 3000 TC=100C 3000 TC=25C

Transition frequency fT (MHz)

10 1000 1000
25C
TC=100C 25C
3 300 300

25C
1 100 100
25C
0.3 30 30

0.1 10 10

0.03 3 3

0.01 1 1
0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A) Collector current IC (A) Collector current IC (A)

Area of safe operation (ASO) Rth(t) t

100 103
Non repetitive pulse (1) Without heat sink
TC=25C (2) With a 100 100 2mm Al heat sink
Thermal resistance Rth(t) (C/W)

30
102 (1)
Collector current IC (A)

10
ICP

3 t=1ms (2)
IC 10

1 10ms
DC
1
0.3

0.1
101
2SD1273A
2SD1273

0.03

0.01 102
1 3 10 30 100 300 1000 104 103 102 101 1 10 102 103 104
Collector to emitter voltage VCE (V) Time t (s)

2
Free Datasheet http://www.datasheet4u.com/