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Robertson, I. D. D.)
and design and technology.
circuits, devices and systems series; no. 13)
Microwave integrated circuits-Design and construction
I. Title. Lucyszyn, S. Institution of Electrical Engineers
621.3' 8132
Preface xiii
Foreword xv
Contributors xvii
I
Acknowledgements xix
1 Introduction I. D. Robertson 1
1.1 Introduction 1
1.2 A brief history of MMIC technology 3
1.3 Advantages and disadvantages of MMICs 7
1.3.1 Cost 7
1.3.2 Performance 8
1.3.3 Investment required 9
1.3.4 Reproducibility 10
1.3.5 Reliability 10
1.3.6 Size and mass
I
1.4 Applications 11
1.5 Active device technologies
1.6 Design approaches
1.7 Multi-chip module technology 22
1.8 References 25
2.3.2 Capacitors 39
2.3.3 Spiral inductors 41
2.4 Bipolar transistors 45
2.4.1 Overview of bipolar transistor operation 45
2.4.2 Heterojunction bipolar transistors 54
2.4.3 Summary of contemporary bipolar technologies 56
2.5 Field effect transistors 59
2.5.1 Overview of MEFET operation 59
2.5.2 The high electron mobility transistor (HEMT) 68
2.5.3 Summary of contemporary HEMT technologies 72
2.6 Comparison of bipolar and field effect devices 76
2.6.1 and of bipolar and field effect devices 76
2.6.2 Noise of and field effect devices77
2.6.3 Power and linearity of bipolar
and field effect devices 79
2.7 Summary 81
2.8 References 81
6 Oscillators 251
6.1 Introduction 25
6.2 Design principles 253
6.2.1 Feedback approach 253
6.2.2 Negative resistance approach 254
6.3 Active device 257
6.3.1 MESFET versus silicon bipolar transistors 257
6.3.2 bipolar transistors 257
6.3.3 technology 258
6.3.4 RF CMOS technology 259
Contents ix
Index 555