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Introduction A
A
RC networks are used to control voltage transients that could
IA
falsely turn-on a thyristor. These networks are called snub- IBP PE
V
bers. PNP
I1 CJP IJ ICP NB
CJN
The simple snubber consists of a series resistor and capacitor CJ C
ICN I2 dV
placed around the thyristor. These components along with IJ G PB
dt
the load inductance form a series CRL circuit. Snubber NPN G t
theory follows from the solution of the circuits differential IBN dV
CJ NE
IK dt
equation. IA =
1 (N + p)
K
tor device.
( dV ) Device Physics
(V/s)
dt s 120
dV
dt
dV 100
Static ------- turn-on is a consequence of the Miller effect and
STATIC
dt
80
regeneration (Figure 1). A change in voltage across the
junction capacitance induces current through it. This current 60
dV
Figure 2. Exponential dt
s
( )
versus Peak Voltage
dV
Static ------- does not depend strongly on voltage for operation
dt Improving ( dV )
dt s
below the maximum voltage and temperature rating.
Avalanche multiplication will increase leakage current and dV
Static ------- can be improved by adding an external resistor
dt
dV
reduce ------- capability if a transient is within roughly 50 volts from the gate to MT1 (Figure 4). The resistor provides a path
dt
of the actual device breakover voltage. dV
for leakage and ------- induced currents that originate in the
dt
drive circuit or the thyristor itself.
dV
A higher rated voltage device guarantees increased ------- at
dt 140
lower voltage. This is a consequence of the exponential
rating method where a 400 V device rated at 50 V/s has a 120
dV MAC 228-10
higher ------- to 200 V than a 200 V device with an identical 100
dt 800V 110C
(V/s)
rating. However, the same diffusion recipe usually applies
80
for all voltages. So actual capabilities of the product are not
dV
dt
much different.
STATIC
60
RINTERNAL = 600
Heat increases current gain and leakage, lowering ------- ,
dV 40
dt s
the gate trigger voltage and noise immunity (Figure 3). 20
0
180 10 100 1000 10000
GATE-MT1, RESISTANCE (OHMS)
160
MAC 228-10
140
VPK = 800 V dV
Figure 4. Exponential dt ( )
versus
(V/s)
120 s
Gate to MT1 Resistance
dV
dt
100
STATIC
80
Non-sensitive devices (Figure 5) have internal shorting
resistors dispersed throughout the chips cathode area. This
60 design feature improves noise immunity and high tempera-
40
ture blocking stability at the expense of increased trigger and
holding current. External resistors are optional for non-sensi-
20
20 100 200 300 400 500 600 700 800
tive SCRs and TRIACs. They should be comparable in size
TJ, JUNCTION TEMPERATURE (C) to the internal shorting resistance of the device (20 to 100
ohms) to provide maximum improvement. The internal resis-
dV
Figure 3. Exponential dt ( )
s
versus Temperature tance of the thyristor should be measured with an ohmmeter
that does not forward bias a diode junction.
( dV ) Failure Mode
dt s
2200
2000
Occasional unwanted turn-on by a transient may be accept-
MAC 16-8
able in a heater circuit but isnt in a fire prevention sprinkler 1800 VPK = 600 V
(V/s)
1400
sive. If the thyristor shorts the power line or charged
STATIC
1000
dV
Static ------- turn-on is non-destructive when series impedance
dt 800
limits the surge. The thyristor turns off after a half-cycle of
600
dV 50 60 70 80 90 100 110 120 130
conduction. High ------- aids current spreading in the thyristor,
dt TJ, JUNCTION TEMPERATURE (C)
dI
improving its ability to withstand ----- . Breakdown turn-on
dt
does not have this benefit and should be prevented. dV
Figure 5. Exponential dt
s
( )
versus Junction Temperature
Sensitive gate TRIACS run 100 to 1000 ohms. With an gate drive circuit needs to be able to charge the capacitor
dV without excessive delay, but it does not need to supply con-
external resistor, their ------- capability remains inferior to
dt dV
non-sensitive devices because lateral resistance within the tinuous current as it would for a resistor that increases -------
dt
gate layer reduces its benefit. the same amount. However, the capacitor does not enhance
static thermal stability.
Sensitive gate SCRs (IGT < 200 A) have no built-in resistor.
The maximum ------- improvement occurs with a short.
dV
They should be used with an external resistor. The recom- dt s
mended value of the resistor is 1000 ohms. Higher values
Actual improvement stops before this because of spreading
reduce maximum operating temperature ------- (Figure 6).
dV
dt s resistance in the thyristor. An external capacitor of about 0.1
The capability of these parts varies by more than 100 to 1 F allows the maximum enhancement at a higher value of
depending on gate-cathode termination. RGK.
10 MEG
One should keep the thyristor cool for the highest ------- .
dV
MCR22-2
GATE-CATHODE RESISTANCE (OHMS)
TA = 65C dt s
Also devices should be tested in the application circuit at the
A
10 highest possible temperature using thyristors with the lowest
1 MEG V G measured trigger current.
K
dV
TRIAC Commutating
dt
100K dV
What is Commutating ?
dt
dV
The commutating ------- rating applies when a TRIAC has been
dt
conducting and attempts to turn-off with an inductive load.
10K
0.001 0.01 0.1 1 10 100 The current and voltage are out of phase (Figure 8). The
dV TRIAC attempts to turn-off as the current drops below the
STATIC (V/s)
dt holding value. Now the line voltage is high and in the oppo-
site polarity to the direction of conduction. Successful turn-
dV
Figure 6. Exponential dt
s
( )
versus off requires the voltage across the TRIAC to rise to the
Gate-Cathode Resistance instantaneous line voltage at a rate slow enough to prevent
retriggering of the device.
130
R L
VOLTAGE CURRENT
120 i 2
VLINE VMT2-1
MAC 228-10 G
110 800V 110C 1
(V/s)
VMT2-1
dl
100 dt c
dV
PHASE
dt
ANGLE
STATIC
90
TIME
80 TIME
dV
70 i VLINE dt c
60
0.001 0.01 0.1 1
dV
Figure 8. TRIAC Inductive Load Turn-Off dt
c
( )
GATE TO MT1, CAPACITANCE (F)
dV
Figure 7. Exponential dt
s
( )
versus ( dV ) Device Physics
dt c
Gate to MT1 Capacitance
A TRIAC functions like two SCRs connected in inverse-
parallel. So, a transient of either polarity turns it on.
A gate-cathode capacitor (Figure 7) provides a shunt path for
transient currents in the same manner as the resistor. It also There is charge within the crystals volume because of prior
filters noise currents from the drive circuit and enhances the conduction (Figure 9). The charge at the boundaries of the
built-in gate-cathode capacitance voltage divider effect. The
collector junction depletion layer responsible for ------- is volume charge storage and turn-off becomes limited by ------- .
dV dV
dt s dt s
At moderate current amplitudes, the volume charge begins
also present. TRIACS have lower ------- than ------- because
dV dV
dt c dt s to influence turn-off, requiring a larger snubber. When the
of this additional charge.
current is large or has rapid zero crossing, ------- has little
dV
dt c
G MT1 dI
influence. Commutating ----- and delay time to voltage
dt
TOP reapplication determine whether turn-off will be successful
or not. (Figures 11,12)
N N N N
P
VOLTAGE/CURRENT
Previously
Conducting Side
N dI
dt c
dV
+ dt
c
N N N TIME
0
STORED CHARGE
REVERSE RECOVERY MT2 FROM POSITIVE VMT2-1
CURRENT PATH CHARGE DUE
CONDUCTION TO dV/dt
LATERAL VOLTAGE
DROP VOLUME
STORAGE IRRM
CHARGE
Figure 9. TRIAC Structure and
Current Flow at Commutation
Figure 10. TRIAC Current and Voltage at Commutation
The volume charge storage within the TRIAC depends on
the peak current before turn-off and its rate of zero crossing
dI
-----
dt c. In the classic circuit, the load impedance and line E
V
MAIN TERMINAL VOLTAGE (V)
dI 6fI TM
----- = --------------
- A/ms
dt c 1000 E
0.2
dV
bias the emitter and turn the TRIAC on. Commutating ------- 0.2 0.1
dt
capability is lower when turning off from the positive direc-
(td = W0 td)
0.05
0.1
tion of current conduction because of device geometry. The
gate is on the top of the die and obstructs current flow. 0.05 0.02
RL = 0
Recombination takes place throughout the conduction period 0.03 M=1 0.01
IRRM = 0
and along the back side of the current wave as it declines to zero. 0.02
VT
Turn-off capability depends on its shape. If the current ampli- E 0.005
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1
tude is small and its zero crossing ----- is low, there is little
dI
dt c DAMPING FACTOR
Conditions Influencing ( dV )
dt c
Improving ( dV )
dt c
The same steps that improve ------- aid ------- except when
dV dV dV
Commutating ------- depends on charge storage and recovery
dt dt s dt c
dV stored charge dominates turn-off. Steps that reduce the
dynamics in addition to the variables influencing static ------- .
dt stored charge or soften the commutation are necessary then.
High temperatures increase minority carrier life-time and the
size of recovery currents, making turn-off more difficult. Larger TRIACS have better turn-off capability than smaller
Loads that slow the rate of current zero-crossing aid turn-off. ones with a given load. The current density is lower in the
Those with harmonic content hinder turn-off. larger device allowing recombination to claim a greater pro-
portion of the internal charge. Also junction temperatures are
RS C lower.
( dV ) Failure Mode
dt c
ts = (33 turns)(0.076 cm2)(28000 Gauss)(1 x 10-8)/(175 v) = 4.0 s.
V (VOLTS)
dV
reduction in ------- requires a 100 to 1 increase in either
dt 0
component.
the values required for the model are not easily obtained Snubber operation relies on the charging of the snubber
except by testing. Therefore, reliability should be verified in capacitor. Turn-off snubbers need a minimum conduction
the actual application circuit. angle long enough to discharge the capacitor. It should be at
least several time constants (RS CS).
Table 1 shows suggested minimum resistor values estimated
(Appendix A) by testing a 20 piece sample from the four Stored Energy
different TRIAC die sizes.
Inductive Switching Transients
Table 1. Minimum Non-inductive Snubber Resistor for 1 2
E = --- L I O Watt-seconds or Joules
Four Quadrant Triggering. 2
dl IO = current in Amperes flowing in the inductor at t = 0.
Peak VC dt
TRIAC Type Volts RS Ohms A/S Resonant charging cannot boost the supply voltage at turn-
off by more than 2. If there is an initial current flowing in the
Non-Sensitive 200 3.3 170 load inductance at turn-off, much higher voltages are possi-
Gate 300 6.8 250 ble. Energy storage is negligible when a TRIAC turns off
(IGT > 10mA) 400 11 308 because of its low holding or recovery current.
8 to 40 A(RMS) 600 39 400
800 51 400
The presence of an additional switch such as a relay, thermo-
stat or breaker allows the interruption of load current and the
dl
Reducing generation of high spike voltages at switch opening. The
dt
energy in the inductance transfers into the circuit capacitance
dI
TRIAC ----- can be improved by avoiding quadrant 4 and determines the peak voltage (Figure 15).
dt
triggering. Most optocoupler circuits operate the TRIAC in
quadrants 1 and 3. Integrated circuit drivers use quadrants 2 L
dI dV I L
= VPK = I
Inductance in series with the snubber capacitor reduces ----- . dt C C
dt
It should not be more than five percent of the load inductance (a.) Protected Circuit (b.) Unprotected Circuit
dV
to prevent degradation of the snubbers ------- suppression
dt Figure 15. Interrupting Inductive Load Current
capability. Wirewound snubber resistors sometimes serve
this purpose. Alternatively, a separate inductor can be added Capacitor Discharge
in series with the snubber capacitor. It can be small because 1 2
The energy stored in the snubber capacitor E C = --2- CV
it does not need to carry the load current. For example, 18
transfers to the snubber resistor and thyristor every time it
turns of AWG No. 20 wire on a T50-3 (1/2 inch) powdered
turns on. The power loss is proportional to frequency
iron core creates a non-saturating 6.0 H inductor.
(PAV = 120 EC @ 60 HZ).
A 10 ohm, 0.33 F snubber charged to 650 volts resulted in a
Current Diversion
dI
1000 A/s ----- . Replacement of the non-inductive snubber The current flowing in the load inductor cannot change
dt
resistor with a 20 watt wirewound unit lowered the rate of instantly. This current diverts through the snubber resistor
rise to a non-destructive 170 A/s at 800 V. The inductor dV
causing a spike of theoretically infinite ------- with magnitude
gave an 80 A/s rise at 800 V with the non-inductive resistor. dt
equal to (IRRMR) or (IHR).
The Snubber Capacitor
A damping factor of 0.3 minimizes the size of the snubber Load Phase Angle
dV
Highly inductive loads cause increased voltage and ------- at
capacitor for a given value of ------- . This reduces the cost and dV
dt dt c
physical dimensions of the capacitor. However, it raises turn-off. However, they help to protect the thyristor from
voltage causing a counter balancing cost increase.
transients and ------- . The load serves as the snubber
dV
dt s
inductor and limits the rate of inrush current if the device 2.8
dV
does turn on. Resistance in the load lowers ------- and VPK 2.6
dt E
(Figure 16). 2.4 0-63%
dV
dV
dt
2.2 dV dt
1.4 2.2
dt MAX
1.0 dt
0.8 1.6
NORMALIZED
dt / (E W0)
0.8
VPK/E
1.5
M = 0.5
0.6
0.6 1.4
dV
0.4 dV
M = 0.25 1.3
dt o
0.2
0.4 1.2
0
M=0 1.1 0 0.2 0.4 0.6 0.8 1.0 2.2 1.4 1.6 1.8 2.0
Figure 19. Inductor Model 1. Supply sufficient trigger current amplitude. TRIACS
have different trigger currents depending on their quad-
Complex Loads rant of operation. Marginal gate current or optocoupler
LED current causes halfwave operation.
Many real-world inductances are non-linear. Their core
materials are not gapped causing inductance to vary with 2. Supply sufficient gate current duration to achieve
current amplitude. Small signal measurements poorly latching. Inductive loads slow down the main terminal
characterize them. For modeling purposes, it is best to current rise. The gate current must remain above the
measure them in the actual application. specified IGT until the main terminal current exceeds the
latching value. Both a resistive bleeder around the load
Complex load circuits should be checked for transient volt- and the snubber discharge current help latching.
ages and currents at turn-on and turn-off. With a capacitive
Use a snubber to prevent TRIAC ------- failure.
load, turn-on at peak input voltage causes the maximum dV
3.
dt c
surge current. Motor starting current runs 4 to 6 times the
steady state value. Generator action can boost voltages above 4. Minimize designed-in trigger asymmetry. Triggering
the line value. Incandescent lamps have cold start currents 10 must be correct every half-cycle including the first.
to 20 times the steady state value. Transformers generate Use a storage scope to investigate circuit behavior
voltage spikes when they are energized. Power factor correc- during the first few cycles of turn-on. Alternatively,
tion get the gate circuit up and running before energizing
circuits and switching devices create complex loads. In most the load.
cases, the simple CRL model allows an approximate snubber
design. However, there is no substitute for testing and mea- 5. Derive the trigger synchronization from the line instead
suring the worst case load conditions. of the TRIAC main terminal voltage. This avoids regen-
erative interaction between the core hysteresis and the
Surge Currents in Inductive Circuits triggering angle preventing trigger runaway, halfwave
operation, and core saturation.
Inductive loads with long L/R time constants cause asym-
metric multi-cycle surges at start up (Figure 20). Triggering 6. Avoid high surge currents at start-up. Use a current
at zero voltage crossing is the worst case condition. The probe to determine surge amplitude. Use a soft start
surge can be eliminated by triggering at the zero current circuit to reduce inrush current.
crossing angle.
Distributed Winding Capacitance
20 MHY There are small capacitances between the turns and layers of
240 i
0.1 a coil. Lumped together, they model as a single shunt capaci-
VAC tance. The load inductor behaves like a capacitor at frequen-
cies above its self-resonance. It becomes ineffective in
dV
controlling ------- and VPK when a fast transient such as that
dt
90
resulting from the closing of a switch occurs. This problem
i (AMPERES)
E e RS
Figure 22. Single Snubber For Sensitive Gate TRIAC and
Phase Controllable Optocoupler ( = 0.67)
CS
1N4001
Figure 22 illustrates the use of the RC time constant design 1 4 400 Hz
method. The optocoupler sees only the voltage across the 2 5
snubber capacitor. The resistor R1 supplies the trigger 3 6 51 MCR265-4 0.022
current of the power TRIAC. A worst case design procedure F
100
1N4001
assumes that the voltage across the power TRIAC changes
instantly. The capacitor voltage rises to 63% of the maxi- (50 V/s SNUBBER, = 1.0)
mum in one time constant. Then:
Figure 23. Anti-Parallel SCR Driver
R 1 C S = = ---------------- where ------- is the rated static -------
0.63 E dV dV
dt s dt Octocouplers with SCRs
-------
dV
dt s dV
Anti-parallel SCR circuits result in the same ------- across the
dt
for the optocoupler. optocoupler and SCR (Figure 23). Phase controllable opto-
dV
couplers require the SCRs to be snubbed to their lower -------
dt
rating. Anti-parallel SCR circuits are free from the charge
storage behaviors that reduce the turn-off capability of
TRIACs. Each SCR conducts for a half-cycle and has the
next half cycle of the ac line in which to recover. The turn-off
dV
------- of the conducting SCR becomes a static forward block-
dt
ing ------- for the other device. Use the SCR data sheet -------
dV dV
dt dt s
rating in the snubber design.
A SCR used inside a rectifier bridge to control an ac load The current through the snubber resistor is:
will not have a half cycle in which to recover. The available
t
V
time decreases with increasing line voltage. This makes the --
circuit less attractive. Inductive transients can be suppressed i = ------ 1 e ,
R
by a snubber at the input to the bridge or across the SCR.
However, the time limitation still applies.
and the voltage across the TRAIC is:
Opto ( dV )
dt c
e = i RS
Zero-crossing optocouplers can be used to switch inductive The voltage wave across the TRIAC has an exponential rise
loads at currents less than 100 mA (Figure 24). However a with maximum rate at t = 0. Taking its derivative gives its
power TRIAC along with the optocoupler should be used for value as:
higher load currents. VR
dV
------- = ----------S-
dt 0 L
80
dV ERS
Very short conduction times leave residual charge in the =
dt L
optocoupler. A minimum conduction angle allows recovery
RS
before voltage reapplication. E
RECTIFIER
AC LINE SNUBBER BRIDGE C1
The Snubber with Inductance L G
Then
-ITM = 15A
V RMS 2 2 2 2
Z = --------------- R L + X L X L = Z RL and 100
I RMS
dl = 6 f ITM x 10-3 A/ms
dt c
XL
L = ---------------------
-
2 f Line
dV (V/s)
10
dt c
3. Apply the damping criterion: One hundred H is a suggested value for starting the design.
Plug the assumed inductance into the equation for C. Larger
3 values of inductance result in higher snubber resistance and
L 39.8 10
R S = 2 ---- = 2 ( 0.6 ) ------------------------------ = 1400 ohms dI
C 6 reduced ----- . For example:
0.029 10 dt
8A LOAD
10 0.33 F
R L
100 H < 50 V/s MAC 218-6
20A 68
120V
60Hz
LS1 0.033 F
340
12 dV = 100 V/s dV = 5 V/s
V
HEATER dt s dt c
dV
R L Vstep VPK
dt
MHY V V V/s
Figure 27. Snubbing for a Resistive Load 0.75 15 0.1 170 191 86
0.03 0 39.8 170 325 4.0
0.04 10.6 28.1 120 225 3.3
0.06 13.5 17.3 74 136 2.6
Given E = 240 2 = 340V
Then from Figure 18, VPK = 1.42 (340) = 483 V. Examples of Snubber Designs
Table 2 describes snubber RC values for ------- . Figures 31
dV
Thus, it will be necessary to use a 600 V device. Using the dt s
previously stated formulas for 0, C and R we find:
and 32 show possible R and C values for a 5.0 V/s -------
dV
dt c
6 assuming a pure inductive load.
50 10 V/S
0 = ----------------------------------- = 201450 rps
( 0.73 ) ( 340 V )
dV
Table 2. Static Designs
1 dt
C = --------------------------------------------------------- = 0.2464F
2 6 (E = 340 V, Vpeak = 500 V, = 0.3)
( 201450 ) ( 100 10 )
5.0V/s 50V/s 100V/s
6
100 10 L C R C R C R
R = 2 ( 0.3 ) --------------------------------- = 12ohms
0.2464 10
6 H F Ohm F Ohm F Ohm
47 0.15 10
Variable Loads 100 0.33 10 0.1 20
The snubber should be designed for the smallest load 220 0.15 22 0.03 47
dV 3
inductance because ------- will then be highest because of its
dt
500 0.06 51 0.01 110
dependance on 0. This requires a higher voltage device for
operation with the largest inductance because of the corre- 8 5
sponding low damping factor. 100 3.0 11 0.03 100
0 3
dV
Figure 28 describes ------- for an 8.0 ampere load at various
dt
power factors. The minimum inductance is a component
dV
added to prevent static ------- firing with a resistive load.
dt
Transient and Noise Suppression The natural frequencies and impedances of indoor ac wiring
result in damped oscillatory surges with typical frequencies
Transients arise internally from normal circuit operation or ranging from 30 kHz to 1.5 MHz. Surge amplitude depends
externally from the environment. The latter is particularly on both the wiring and the source of surge energy. Distur-
frustrating because the transient characteristics are unde- bances tend to die out at locations far away from the source.
fined. A statistical description applies. Greater or smaller Spark-over (6.0 kV in indoor ac wiring) sets the maximum
stresses are possible. Long duration high voltage transients voltage when transient suppressors are not present. Tran-
are much less probable than those of lower amplitude and sients closer to service entrance or in heavy wiring have
higher frequency. Environments with infrequent lightning higher amplitudes, longer durations, and more damping
and load switching see transient voltages below 3.0 kV. because of the lower inductance at those locations.
10K
The simple CRL snubber is a low pass filter attenuating
frequencies above its natural resonance. A steady state sinu-
0.6A RMS 2.5A soidal input voltage results in a sine wave output at the same
frequency. With no snubber resistor, the rate of roll off
5A
approaches 12 dB per octave. The corner frequency is at
1000 10A the snubbers natural resonance. If the damping factor is
low, the response peaks at this frequency. The snubber
RS(OHMS)
450V MOV
AT AC INPUT
1 0
2-1
VMT
WITH 5 HY
80A RMS
-400
0 1 2 3 4 5 6
40A TIME (s)
0.1
20A Figure 31. Theoretical Response of Figure 33
Circuit to 3.0 kV IEEE 587 Ring Wave (RSC = 27.5 )
CS(F)
10A
+10
5A
0.01 2.5A 0
VOLTAGE GAIN (dB)
-10
100H
0.6A WITH 5HY
-20 5H
0.001 Vin Vout
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 10
-30
DAMPING FACTOR 12 0.33F WITHOUT 5HY
-40
PURE INDUCTIVE LOAD, V = 120 VRMS, 10K 100K 1M
IRRM = 0
FREQUENCY (Hz)
dV
Figure 30. Snubber Capacitor For dt
c
= 5.0 V/s ( ) Figure 32. Snubber Frequency Response (VV )
out
in
In Figure 35, TRIACs switch a 3 phase motor on and off and 91 0.1 3.75
46 V/s LS 330V
reverse its rotation. Each TRIAC pair functions as a SPDT MAX
switch. The turn-on of one TRIAC applies the differential FWD 500H 5.6
voltage between line phases across the blocking device with- 91 0.1
MOTOR
out the benefit of the motor impedance to constrain the rate 1/70 HP
RS CS 0.26A
dV 115
of voltage rise. The inductors are added to prevent static -------
dt T2323D
firing and a line-to-line short.
SNUBBER
1 2 1
22
100H 2W
G
300 WIREWOUND
4 MOC 6 91
3081 0.15
FWD F
SNUBBER
2 1
SNUBBER
G ALL MOVs ARE 275
300 VRMS
ALL TRIACS ARE
4 MOC 6 91 MAC218-10
3081
REV 1/3 HP
208V
SNUBBER 3 PHASE 91
SNUBBER
2 2 1 G
6 1
100H G
300 MOC
3081 2
4 MOC 6 91
3081 4
FWD
43
SNUBBER
2 1
G
300
4 MOC 6 91
3081
3 REV
The TRIAC is off when the circuit is not doubling. In this Appendix A
state, the TRIAC sees the difference between the line voltage
and the voltage at the intersection of Cl and C2. Transients
dI
on the line cause ------- firing of the TRIAC. High inrush
dV Testing Snubber Discharge
dt s dt
dI
current, ----- and overvoltage damage to the filter capacitor are The equations in Appendix D do not consider the thyristors
dt
possibilities. Prevention requres the addition of a RC snub- turn-on time or on-state resistance, thus, they predict high
ber across the TRIAC and an inductor in series with the line. dI
values of ----- .
dt
SUBBER INDUCTOR
Figure 38 shows the circuit used to test snubber discharge
D1 dI
D2 ----- . A MBS4991 supplies the trigger pulse while the
+ dt
C1
120 VAC quadrants of operation are switch selectable. The snubber
OR D3
D4
240 VAC was mounted as close to the TRIAC under test as possible to
RL reduce inductance, and the current transformer remained in
240V the circuit to allow results to be compared with the measured
0 G +
120V
C2
dI
----- value.
dt
RS CS
Thyristor Types What is the largest capacitor that can be used without limit-
ing resistance? Figure 39 is a photo showing the the current
Sensitive gate thyristors are easy to turn-on because of their pulse resulting from a 0.001 F capacitor charged to 800 V.
low trigger current requirements. However, they have less
dI
dV The 1200 A/s ----- destroyed the TRIAC.
------- capability than similar non-sensitive devices. A non- dt
dt
dV Is it possible for MOV self-capacitance to damage the
sensitive thyristor should be used for high ------- .
dt TRIAC? A large 40 Joule, 2200 A peak current rated MOV
was tested. The MOV measured 440 pF and had an 878 volt
dV breakover voltage. Its peak discharge current (12 A) was half
TRIAC commutating ------- ratings are 5 to 20 times less than
dt
that of a 470 pF capacitor. This condition was safe.
dV
static ------- ratings.
dt
dV
Phase controllable optocouplers have lower ------- ratings than
dt
zero crossing optocouplers and power TRIACS. These
should be used when a dc voltage component is present, or to
prevent turn-on delay.
dV
Zero crossing optocouplers have more ------- capability than
dt
power thyristors; and they should be used in place of phase
controllable devices in static switching applications.
2000
OPTIONAL PEARSON
500W 411 CURRENT
OPTIONAL MOV
TRANSFORMER
RS 50
5000
2.5kV 200W MT2
120 VAC 60Hz
X100
VTC V PROBE
5-50 G
56
SWEEP FOR MT1
CS
DESIRED VCi
TRIAC
UNDER TEST 91
3000
VMT2-1
2 1 12 V MBS4991
1
VG Q1,3 Q2,4
F
3 4
QUADRANT
SWITCH
QUADRANT
MAP
dI
Figure 38. Snubber Discharge dt Test
Appendix B
Measuring ( dV
dt )s
dV
Figure 40 shows a test circuit for measuring the static -------
dt
of power thyristors. A 1000 volt FET switch insures that the
voltage across the device under test (D.U.T.) rises rapidly
from zero. A differential preamp allows the use of a N-chan-
nel device while keeping the storage scope chassis at ground
for safety purposes. The rate of voltage rise is adjusted by a
variable RC time constant. The charging resistance is low to
avoid waveform distortion because of the thyristors self-
capacitance but is large enough to prevent damage to the
dI
D.U.T. from turn-on ----- . Mounting the miniature range
dt
HORIZONTAL SCALE 50 ms/DIV.
VERTICAL SCALE 10 A/DIV. switches, capacitors, and G-K network close to the device
CS = 0.001 F, VCi = 800 V, RS = 0, L = 250 mH, RTRIAC = 10 OHMS under test reduces stray inductance and allows testing at
more than 10 kV/s.
Figure 39. Discharge Current From 0.001 F Capacitor
27
VDRM/VRRM SELECT 2W 1000
10 WATT
WIREWOUND
X100 PROBE 2
RGK 470pF
dV
MOUNT DUT ON dt 0.001
TEMPERATURE CONTROLLED VERNIER 100
C PLATE 2W
0.005
1 MEG 2W EACH
1.2 MEG
82 0.01
2W 2W
POWER
TEST
0.047
1N914 0.1
MTP1N100
20V 0.47 0-1000V
10mA
56
2W 1000 1N967A
f = 10 Hz 1/4W 18V
PW = 100 s
50 PULSE
GENERATOR
dV
Figure 40. Circuit For Static dt Measurement of Power Thyristors
HG = W AT LOW LD10-1000-1000
2.2M, 2W
2.2M, 2W
51k 50H, 3500
2W 910k
MR760 2W Q3 Q1
CL (NON-POLAR)
2.2M
2.2M
MR760
51k 2W
2.2M
910k
CAPACITOR DECADE 110 F, 0.011 F, 100pF0.01F
RS 2W
2N3904 2N3906 + 1.5kV
62F
0-1 kV 20 mA
6.2 MEG 2W
1kV
+ 70mA
0.01
0.01
MR760
2.2M
120 120 6.2 MEG 2W
1/2W 1/2W 150k
2N3906 2N3904
Q3 Q1
2N3906 2N3904 -5 +5
0.1 0.1 PEARSON
301 X 360 1/2W 360 1/2W
2N3904 2N3906
1k 1k
2 CASE 2N3904
CONTROLLED
HEATSINK
1 +
51 2W 2N3906
CS +5 51 2W -5 G 56
2 WATT
Q3 Q1
TRIAC 0.22 0.22
dV UNDER 270k 1N5343
dt 2.2k TEST 7.5V
1/2 270k
SYNC
IPK IP T VCi T2 I dl
CL = = LL = = W0 = = 6f IPK x 10-6
W0 VCi 2 VCi W0 IPK 42 CL LL dt c
A/s
dV
Figure 41. dt
c
( )
Test Circuit for Power TRIACs
Appendix D
dV
Derivations
dt
Definitions
1.0 R T = R L + R S = Total Resis tan ce
RS
1.1 M = ------- = Snubber Divider Ratio
RT
1
1.2 0 = --------------- = Undamped Natural Frequency
LC S
I L
1.5 = --- ---- = Initial Current Factor
E C
RT C
1.6 = ------- ---- = ------- = Damping Factor
2 L 0
I ER
1.8 = ------ ----------L-
CS L
dV
------- = initial instantaneous -------at t = 0, ignoring any instantaneous voltage step at
dV
dt 0 dt
t = 0 because of IRRM
dV R
1.9 ------- = V OL ------T- + . For All Damping Conditions
dt 0 L
ER
When I = 0, ------- = ----------S
dV
2.0 dt 0 L
dV
-------
dV
= Maximum Instantaneous -------
dt max dt
dV
t max = Time of maximum instantaneous -------
dt
t peak = Time of maximum instantaneous peak voltage across thyristor
dV
Average ------- = V PK t PK = Slope of the secant line from t = 0 through V PK
dt
2.1 No Damping ( = 0 )
= 0
RT = = = 0
L 2
= 0, = 0, R = 2 ---- , C = -----------
C R T
E L + SI E SV O
L
3.0 i ( S ) = ------------------------------------- ; e = --- -------------------------------------
2 R T 1 S 2 RT 1
S + S ------- + -------- S + ------- S + --------
L LC L LC
RL L
t=0
+ I RS
e
CS
INITIAL CONDITIONS
I = IRRM
VCS = 0
1 1 2V O +
L
4.2 t PK = ---- tan -----------------------------------------------
-
2
2
V O ------------------- -------
L
When M = 0, R S = 0, I = 0 ; t PK =
2 2 2
4.3 V PK = E + ------ t PK 0 V O + 2V O +
0 L L
When I = 0, R L = 0, M = 1:
V PK
4.4 ---------- = ( 1 + e t PK )
E
dV V PK
Average ------- = ----------
dt t PK
2 2
1 ( 2 V O ( 3 ) )
L
4.5 t max = ---- ATN --------------------------------------------------------------------------
-
3
V O ( 3 ) + ( )
2 2 2
L
dV 2 t max
-------
2 2
4.6 = V O 0 + 2 V O + e
dt max L L
No Damping
I
5.0 e = E ( 1 Cos ( 0 t ) ) + ----------- sin ( 0 t )
C 0
de I
5.1 ------ = E 0 sin ( 0 t ) + ---- cos ( 0 t )
dt C
5.2 dV
------- = ---- = 0 when I = 0
I
dt 0 C
tan ---------------
1 I
5.3 CE 0
t PK = ------------------------------------------
0
2
2 I
5.4 V PK = E + E + ----------------
2 2
0 C
dV V PK
5.5 ------- = ----------
dt AVG t PK
1 0 EC I
t max = ------ tan --------------- = ------ --- when I = 0
I
5.6 0 I 0 2
dV
-------
I 2 2 2 2
= ---- E 0 C + I = 0 E when I = 0
5.7 dt max C
Critical Damping
t t
6.0 e = E V O ( 1 t )e + te
L
de t
6.1 ------ = [ V O ( 2 t ) + ( 1 t ) ]e
dt L
2 + --------------
2V OL
6.2 t PK = ------------------------
+ ----------
VO
L
6.3 V PK = E [ V O ( 1 t PK ) t PK ]e t PK
L
dV V PK
6.4 Average ------- = ----------
dt t PK
When I = 0, R S = 0, M = 0
dV
e(t) rises asymptotically to E. t PK and average ------- do not exist.
dt
3V O + 2
L
6.5 t max = -----------------------------
2
-
V O +
L
When I = 0, t max = 0
RS
For ------- 3 4
RT
dV
then ------- = dV
-------
dt max dt 0
6.6 dV
-------
dt max
t max
= [ V O ( 2 t max ) + ( 1 t max ) ]e
L
Appendix E
dI
Snubber Discharge Derivations
dt
Overdamped
V CS t
1.0 i = ---------- sinh ( t )
L S
CS
1.1 i PK = V C ------ e t PK
S LS
1 1
1.2 t PK = ---- tan h ----
Critical Damped
VC t
2.0 i = ---------S te
LS
VC
2.1 i PK = 0.736 ---------S
RS
1
2.2 t PK = ---
Underdamped
V C t
3.0 i = ----------S e sin (t )
L S
CS
3.1 i PK = V C ------e t PK
S LS
1 1
3.2 t PK = ---- tan ----
RS LS
t=0
VCS CS i
INITIAL CONDITIONS:
i = 0, VCS = INITIAL VOLTAGE
No Damping
VC
4.0 i = ----------S sin ( t )
L S
CS
4.1 i PK = V C ------
S LS
4.2 t PK = -------
2
Bibliography
Bird, B. M. and K. G. King. An Introduction To Power Elec- Kervin, Doug. "The MOC3011 and MOC3021," EB-101,
tronics. John Wiley & Sons, 1983, pp. 250281. Motorola Inc., 1982.
Blicher, Adolph. Thyristor Physics. Springer-Verlag, 1976. McMurray, William. Optimum Snubbers For Power Semi-
condutors," IEEE Transactions On Industry Applications,
Gempe, Horst. Applications of Zero Voltage Crossing Opti- Vol.1A-8, September/October 1972.
cally Isolated TRIAC Drivers, AN982, Motorola Inc., 1987
Rice, L. R. Why R-C Networks And Which One For Your
Guide for Surge Withstand Capability (SWC) Tests, ANSI Converter, Westinghouse Tech Tips 5-2.
337.90A-1974, IEEE Std 4721974.
Saturable Reactor For Increasing Turn-On Switching Capa-
IEEE Guide for Surge Voltages in Low-Voltage AC Power bility, SCR Manual Sixth Edition, General Electric, 1979.
Circuits, ANS1/lEEE C62.41 -1980, IEEE Std 5871980
Zell, H. P. Design Chart For Capacitor-Discharge Pulse
dI Circuits," EDN Magazine, June 10, 1968.
Ikeda, Shigeru and Tsuneo Araki. The ----- Capability of
dt
Thyristors, Proceedings of the IEEE, Vol.53, No.8, August
1967.
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