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photovoltaic cells
Abstract-Like all semiconductor devices, solar cells are sensitive to temperature effect on electrical current and power production.
temperature. In actual installations the cell temperature rises leading to a total
In this Section, experimental measurements under real
efficiency reduction, which cannot be overlooked. This paper investigates the
influence of the temperature and solar radiation changing effects on the
conditions are performed to quantify the influence of the
system performance. Our study is based on experimental results set up of 6 temperature in term of current and power production. Finally,
PV multicrystallin silicon panels under existing conditions and not indoor a conclusion is given in section IV.
conditions.
Keywords--Solar Energy, Renewable and Sustainable Energy, II. PV MODULE EFFICIENCY AS A FUNCTION OF THE
Semiconductors. Photovoltaic effect, p-n junction. Silicon cells. temperature
OPERATING TEMPERATURE
influence. Power production.
The photovoltaic effect [6, 7] is the basic principal
I. INTRODUCTION
process by which a PV cell converts sunlight into electricity.
The annual power output yield by photovoltaic (PV) When light shines on a PV cell, it may be reflected, absorbed,
system depends on several climatic factors [1] such as the or passed right through. The absorbed light generates
solar radiation, the ambient temperature and the state of the electricity. Fig. 1 gives an electrical model of a PV cell.
solar modules (cell material, ageing, cleanliness, etc.)[2]. To
develop efficient renewable and sustainable energy for power
1
Rs
production systems, the strong understanding of electro diod
thermal behaviors of the PV is required. Indeed, a behavior Current Rp
Ig R
vi
generator
model compared to experimental measurement results
contributes to predict the current and power production
variations which must be taking into account in the sizing
t Id Ip
..
installation and manufacturing of solar energy production
system, and energy distribution network based on PV. Fig. 1 Electrical circuit model of single diode PV cell
In this paper, we focus this work mainly on experimental including the parasitic series and shunt resistances.
observations of the temperature influence [3, 4] on the global In this electrical model, by neglecting the parasite current
efficiency [5], and thus on electrical power production. As the Ip, the current running in a load resistance R is deduced as
cell temperature rises above the standard operating follows :
temperature of 2YC, the panel operates less efficiently and the
provided voltage decreases. In this case heat can be considered 1 = 19 - Id (1)
as resistance to flow of electrons. The effective current also where Id and Ig are the dark and photo currents, respectively.
seems to decrease. A panel between 80 to 90C, losses 0.5% in These currents are given by the following expressions:
efficiency per every degree rise in temperature. On hot l
summer days, we observed from our experimental set up, the Id = az . e[(a3 'V)- ] (2)
panel temperature can easily reach 70C or more, although a 19 = al . S* (3)
natural air flow behind the panels. Solar panels are tested where V is the voltage at the terminal of the PV cell. S* is the
2
under laboratory conditions called STC (Standard Test intensity of solar radiation (W/m ). a), a2, and a3 are
Conditions)and corresponding at a solar radiation level of temperature function parameters [8] given by the following
2 equations:
1000W/m with a temperature of 2YC. However, in the real
2.5 . 10-7 r + 2 . 10-4
2
world, these conditions are constantly changing. Therefore, al = (A/Wm ) (4)
the panel output is different from the laboratory conditions. a2 =
6 4
4 10- . r . e- 3 (A)
a (5)
The rest of this paper is organized as follows. Section II a3 -.!L (A/W) (6)
=
KT
describes the PV modeling based on parameter value
extraction depending temperature influence of real PV silicon where q is the electronic charge (C). K is the Boltzmann
cells. The details of the procedure measurement for constant (JIK), and T is the absolute temperature. The plots
determining the PV characteristics through experimental given by the figure 2 to 4 show experimental results of
results are given in this section. Section III presents the variations of a" a2, and a3 parameters obtained for a PV silicon
V (al - a . e[(a3V)-11)
p = . . S* z (7) 39
ro 2.8 0.62
2.78 0.6
2.76 o.
2.74 O,56
>
2.72 '---------------' o.
290 300 310 320 330 340 350
T'K
0.52
Fig. 2. Variation of a1 parameter versus temperature.
0.5 '---------
a n m _
0 "'
X 1 .10
1.2-----,___-------------,
_
OOO ,____-------____,
0
.8
940
0
.6
920
04
.
900
0 880
.2
860
0==== 3L O-----'
9LO-30 3 330--340 --350
0------'
1 2
1"K 840
From the equation (7), deriving P by V, we determine the Fig. 6. Power variation of the PV cell versus temperature.
maximwn voltage Vm expressed as follows:
(9)
Thereby, we deduce the maximum power relation as follows: light irradiation (W/mz), and the green one is the module
temperature.
(10)
12 r---
11
III
II III IIII
10
II I III III S*= 800 W/m2
o 10 20 30 40 50 60 70 "0 90
5
S*= 600 W/m2
Fig. 7. Efficiency variation versus temperature.
2.2S0 !2 32,5
600 !i.
--i
3010 .g
(1)
. ., (1) 20,0 .!
"
1.2S0 350 17,5 .Q
3'
a.
300
1S,0
1.000
250 12,5
7S0 200 10,0
500 150 7,5
100 5,0
2S0
SO 2,5
Time of day
o 0,0
00:00 02:00 04:00 06:00 08:00 10:00 12:00 14:00 16:00 18:00 20:00 22:00 00:00
Fig. 11. Power drop due to high temperature under existing conditions during a sunny day.
PV module manufacturer's that reported modules investment is considered_
performance under STC rating is not capable of predicting
exactly how much energy a module will produce in the field. REFERENCES
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