BSP 171

SIPMOS Small-Signal Transistor

P channel
Enhancement mode
Logic Level
Avalanche rated
VGS(th) = -0.8...-2.0 V
Pin 1 Pin 2 Pin 3 Pin 4
G D S D

Type VDS ID RDS(on) Package Marking

BSP 171 -60 V -1.7 A 0.35 SOT-223 BSP 171

Type Ordering Code Tape and Reel Information

BSP 171 Q67000-S224 E6327

Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current ID A
TA = 24 C -1.7
DC drain current, pulsed IDpuls
TA = 25 C -6.8
Avalanche energy, single pulse EAS mJ
ID = -1.7 A, VDD = -25 V, RGS = 25
L = 3.23 mH, Tj = 25 C 8
Gate source voltage VGS 20 V
Power dissipation Ptot W
TA = 25 C 1.8

Semiconductor Group 1 18/02/1997

 BSP 171

Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature Tj -55 ... + 150 C
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip to ambient air 1) RthJA 70 K/W
Thermal resistance, junction-soldering point 1) RthJS 10
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56

1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection

Electrical Characteristics, at Tj = 25C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics
Drain- source breakdown voltage V(BR)DSS V
VGS = 0 V, ID = -0.25 mA, Tj = 25 C -60 - -
Gate threshold voltage VGS(th)
VGS=VDS, ID = -1 mA -0.8 -1.4 -2
Zero gate voltage drain current IDSS A
VDS = -60 V, VGS = 0 V, Tj = 25 C - -0.1 -1
VDS = -60 V, VGS = 0 V, Tj = 125 C - -10 -100
Gate-source leakage current IGSS nA
VGS = -20 V, VDS = 0 V - -10 -100
Drain-Source on-state resistance RDS(on)
VGS = -10 V, ID = -1.7 A - 0.22 0.35

Semiconductor Group 2 18/02/1997

 BSP 171

Electrical Characteristics, at Tj = 25C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Dynamic Characteristics
Transconductance gfs S
VDS 2 * ID * RDS(on)max, ID = -1.7 A 1 1.55 -
Input capacitance Ciss pF
VGS = 0 V, VDS = -25 V, f = 1 MHz - 720 960
Output capacitance Coss
VGS = 0 V, VDS = -25 V, f = 1 MHz - 290 435
Reverse transfer capacitance Crss
VGS = 0 V, VDS = -25 V, f = 1 MHz - 120 180
Turn-on delay time td(on) ns
VDD = -30 V, VGS = -10 V, ID = -0.3 A
RGS = 50 - 16 25
Rise time tr
VDD = -30 V, VGS = -10 V, ID = -0.3 A
RGS = 50 - 70 105
Turn-off delay time td(off)
VDD = -30 V, VGS = -10 V, ID = 0.3 A
RGS = 50 - 230 310
Fall time tf
VDD = -30 V, VGS = -10 V, ID = -0.3 A
RGS = 50 - 280 375

Semiconductor Group 3 18/02/1997

 BSP 171

Electrical Characteristics, at Tj = 25C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Reverse Diode
Inverse diode continuous forward current IS A
TA = 25 C - - -1.7
Inverse diode direct current,pulsed ISM
TA = 25 C - - -6.8
Inverse diode forward voltage VSD V
VGS = 0 V, IF = -3.4 A, Tj = 25 C - -0.9 -1.2
Reverse recovery time trr ns
VR = 30 V, IF=lS = 0 , diF/dt = 100 A/s - 300 -
Reverse recovery charge Qrr C
VR = 30 V, IF=lS = 0 , diF/dt = 100 A/s - 0.82 -

Semiconductor Group 4 18/02/1997

 BSP 171

Power dissipation Drain current

Ptot = (TA) ID = (TA)
parameter: VGS -10 V

2.0 -1.8

W
A

Ptot 1.6 ID
-1.4
1.4
-1.2
1.2
-1.0
1.0
-0.8
0.8

-0.6
0.6

-0.4
0.4

0.2 -0.2

0.0 0.0
0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C 160
TA TA

Safe operating area ID=f(VDS) Transient thermal impedance

parameter : D = 0, TC=25C Zth JA = (tp)
parameter: D = tp / T

10 2
K/W

10 1

ZthJC
10 0

10 -1

D = 0.50
10 -2
0.20
0.10
10 -3 0.05
single pulse 0.02

10 -4 0.01

10 -5
-8 -7 -6 -5 -4 -3 -2 -1 0
10 10 10 10 10 10 10 10 s 10
tp

Semiconductor Group 5 18/02/1997

 BSP 171

Typ. output characteristics Typ. drain-source on-resistance

ID = (VDS) RDS (on) = (ID)
parameter: tp = 80 s parameter: tp = 80 s, Tj = 25 C

-3.8 1.1
Ptot = k2W
li
j h g a b c d
A
f
-3.2 VGS [V]
0.9
ID a -2.0 RDS (on)
-2.8 b -2.5
0.8
c -3.0

e d -3.5
-2.4 0.7
e -4.0
f -4.5 0.6
-2.0
g -5.0
h -6.0 0.5
-1.6
d i -7.0
j -8.0 0.4
e
-1.2 k -9.0
l -10.0
0.3 f
c g h
-0.8 i j
0.2
VGS [V] =
-0.4 b 0.1 a b c d e f g h i j
-2.5
-2.0
-3.0 -3.5 -4.0 -4.5 -5.0 -6.0 -7.0 -8.0 -9.0 -10.0
0.0 a 0.0
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.2 A -3.8
VDS ID

Typ. transfer characteristics ID = f(VGS) Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 s parameter: tp = 80 s,
VDS 2 x ID x RDS(on)max VDS2 x ID x RDS(on)max

-3.6 2.2

S
A
1.8
ID gfs
-2.8
1.6
-2.4
1.4

-2.0 1.2

-1.6 1.0

0.8
-1.2
0.6
-0.8
0.4

-0.4
0.2
0.0 0.0
0 -1 -2 -3 -4 -5 -6 -7 -8 V -10 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 A -3.4
VGS ID

Semiconductor Group 6 18/02/1997

 BSP 171

Drain-source on-resistance Gate threshold voltage

RDS (on) = (Tj ) VGS (th) = (Tj)
parameter: ID = -1.7 A, VGS = -10 V parameter: VGS = VDS, ID = -1 mA

0.9 -4.6
V

-4.0
RDS (on) 0.7 VGS(th)
-3.6

0.6 -3.2

-2.8
0.5
-2.4
98%
98%
0.4
-2.0

0.3 -1.6 typ

typ
-1.2
0.2 2%
-0.8
0.1
-0.4
0.0 0.0
-60 -20 20 60 100 C 160 -60 -20 20 60 100 C 160
Tj Tj

Typ. capacitances Forward characteristics of reverse diode

C = f (VDS) IF = (VSD)
parameter:VGS=0V, f = 1 MHz parameter: Tj , tp = 80 s

10 1 -10 1

nF A
C IF

10 0 -10 0
Ciss

Coss

10 -1 -10 -1
Crss
Tj = 25 C typ
Tj = 150 C typ
Tj = 25 C (98%)
Tj = 150 C (98%)

10 -2 -10 -2
0 -5 -10 -15 -20 -25 -30 V -40 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0
VDS VSD

Semiconductor Group 7 18/02/1997

 BSP 171

Avalanche energy EAS = (Tj ) Drain-source breakdown voltage

parameter: ID = -1.7 A, VDD = -25 V V(BR)DSS = (Tj)
RGS = 25 , L = 3.23 mH

9 -71

V
mJ

-68
EAS 7 V(BR)DSS

-66
6

-64
5

-62
4

-60
3

2 -58

1 -56

0 -54
20 40 60 80 100 120 C 160 -60 -20 20 60 100 C 160
Tj Tj

Safe operating area ID=f(VDS)

parameter : D = 0.01, TC=25C

Semiconductor Group 8 18/02/1997