Paper# FirstAuthor Scores Comments

1 Kls, A.
2 Mouli, C.
3 Li, J.
4 Matsuoka, F.
5 Yamazaki, H.
6 Sakamoto, W.
7 Chen, G.
8 Wang, C.C.
9 Friedrich, R.
10 Jungemann, C.
11 Kanegae, Y.
12 Moriya, H.
13 Uematsu, M.
14 Bufler, F.
15 Boucard, F.
16 Watanabe, K.
17 Sukharev, V.
18 Chakravarthi, S.
19 Toyabe, T.
20 Kuligk, A.
21 Bhuwalka, K. K.
22 Basol, I.
23 Janssens, E.
24 Shi, X.
25 Mayergoyz, I. D.
26 Schenk, A.
27 Yang, L.
28 Bendix, P.
29 Diebel, M.
30 Choi, M.
31 Hong, C.
32 Ohkura, Y.
33 Csaba, G.
34 Wang, P.-F.
35 Castellazzi, A.
36 Esseni, D.
37 Matsuzawa, K.
38 Ouyang, Q. (C.)
39 Maanane, H.
40 Chakarov, I.
41 Tosaka, Y.
42 Mandal, S.K.
43 Br, E.
44 Fhner, T.
45 Burenkov, A.
46 Nguyen, P.-H.
47 Matsuzawa, K.
48 Chakravorty, A.
49 Tanabe, R.
50 Dixit, A.
51 Satoh, S.
52 Chang, L.
53 Akil, N.
54 Li, Y.
55 Li, Y.
56 Li, Y.
57 Lee, J.-W.
58 Radic, L.
59 Wang, X.
60 Oldiges, P.
61 Nagler, O.
62 Jacobs, W.
63 Krivokapic, Z.
64 Krivokapic, Z.
65 Jin, S.
66 Hong, S.
67 Ezaki, T.
68 Fujii, O.
69 Iannaccone, G.
70 Mugnaini, G.
71 Zhang, D.
72 Le Royer, C.
73 Godoy, A.
74 Hwang, C.-O.
75 Fuchs, E.
76 Nayfeh, O.M.
77 He, L.
78 Kim, K.
79 Alexander, C.
80 Roy, G.
81 Gnani, E.
 82 Rudan, M.
83 Pavlov, B.S.
84 Takase, T.
85 Naeve, T.
86 Seidl, A.
87 Choudhary, D.
88 Mijalkovic, S.
89 Lin, F.
90 Du, G.
91 Liu, X.
92 Tanaka, T.
93 Negulescu, C.
94 Dollfus, P.
95 Zhu, H.
96 Pakfar, A.
97 Lee, A.
98 Ito, C.
99 Zhang, J.
100 Rudan, M.
101 Mohrhof, J.
102 Pecchia, A.
103 Sleiman, A.
104 Guo, W.-L.
105 Chun, J.-H.
106 Shin, M.
107 Navarro, D.
108 Sadachika, N.
109 Petri, F.
110 Jang, J.
111 Lin, M.T.
112 Krishnamohan, T.
113 Lorenzini, M.
114 Kim, S.-D.
115 Bloomfield, M.O.
116 Subba, N.
117 Icaza Deckelmann, A.
118 Thalhammer, R.
119 Groos, G.
120 Akturk, A.
121 Kang, E.-S.
122 Wittmann, R.
123 Ayalew, T.
124 Grasser, T.
125 Hssinger, A.
126 Wagner, S.
127 Hollauer, C.
128 Pourfath, M.
129 Sheikholeslami, A.
130 Sheikholeslami, A.
131 Ceric, C.
132 Wessner, W.
133 Gehring, A.
134 Guo, W.-L.
135 Shao, X.
136 Koleva, E.
137 Ogawa, M.
138 Gortinskaya, L. V.
139 Tesovskaya, E.S.
140 Heitzinger, C.
141 Kwon, O.
142 Pennington, G.
143 Ravichandran, K.
144 Soelkner, G.
145 Racko, J.
146 Pethe, A.
147 Ravariu, C.
148 Stefanescu, E.
149 Ruhstaller, B.
150 Barbarada, F.
151 Horn, A.
Paper# FirstAuthor Corresp. Author Title
1 Kls, A. ELDO implementation of predicitve compact model PREDICTMOS
2 Mouli, C. Impact of Negatively-Biased Passing Word Lines on Leakage Current and Retention Time in Scaled DRAM Cells
3 Li, J. Mouli, C. Three-Dimensional Characterization and Modelling of Stress Distribution in High-Density DRAM memory Cells
4 Matsuoka, F. An Analysis of the Effect of Surrounding Gate Structure on Soft Error Immunity
5 Yamazaki, H. Numerical analysis for the structure dependence on the subthreshold slope of Floating Channel type SGT(FC-SGT) Flash memory
6 Sakamoto, W. An Analysis of Inversion Charge Density in Surrounding-Gate-Transisor (SGT) Using High-k Dielectrics
7 Chen, G. Space design between source/drain and fin for high-performance sub-10nm FinFET devices
8 Wang, C.C. Boron Diffusion in Strained and Strain-Relaxed SiGe
9 Friedrich, R. Technology Trends in Microelectronics and its Impact on Simulation and Modeling with SPICE and BSIM4
10 Jungemann, C. Impact of Floating Body Effect on Noise in SOI Devices Investigated by Hydrodynmaic Simulation
11 Kanegae, Y. Strain Optimization to Reduce Gate Leakage Current in MOS Transistors with Silicon Oxynitride Gate Dielectrics by Use of First-Principles Calculations
12 Moriya, H. Strain-Induced Leakage Current in High-k Gate Oxides Simulated with First-Principles Calculations
13 Uematsu, M. Effect of Stress on Pattern-Dependent Oxidation of Silicon Nanostructures
14 Bufler, F. Scalability of FinFETs and unstrained-Si/strained-Si FDSOI-MOSFETs
15 Boucard, F. A Comprehensive Solution for Simulating Ultra-Shallow Junctions: From High Dose/Low Energy Implant to Diffusion Annealing
16 Watanabe, K. Accurate Temperature Drift model of MOSFETs Mobility for Analog Circuits
17 Sukharev, V. 3-D Physically-Based Electromigration Simulation in Copper-Low-K Interconnect
18 Chakravarthi, S. Continuum Modeling of Indium to Predict SSR Profiles
19 Toyabe, T. Single Ion and Multi Ion MOSFETs Simulation with Density Gradient Model
20 Kuligk, A. Full-band approach to impact ionization and high-field transport in semiconductor
21 Bhuwalka, K. K. Halo Vertical FET Delta Droped Layers
22 Basol, I. Simulation of Electrostatic Atomic Force Microscopes using a Staggered ALE Approach
23 Janssens, E. Full-wave Simulation of MOS-devices at High Frequencies using Higher-Precision Floats Computation
24 Shi, X. A More Effectual Speed-up Method for Doping Simulation
25 Mayergoyz, I. D. Analysis of random doping and random oxide thickness induced fluctuations in nanscale semiconductor devices through Poisson-Schrdinger computations
26 Schenk, A. A Local Mobility Model for Ultra-Thin DGSOI nMOSFETs
27 Yang, L. Mobility and device performance in conventional and strained Si n-MOSFETs with high-k gate stacks
28 Bendix, P. Practical Aspects of MOS Transistor Model "Accuracy" in Modern CMOS Technology
29 Diebel, M. Ab-initio Calculations to Predict Stress Effects on Boron Solubility in Silicon
30 Choi, M. Simulation of Lithography-caused Gate Length and Interconnect Linewidth Variational Impact on Circuit Performance in Nanoscale Semiconductor Manufacturing
31 Hong, C. Analysis of the Layout Impact on Electric Fields in Chip Interconnect Structures
32 Ohkura, Y. A new method in transition from a 2D to a 3D particle for a 2D/3D combined Monte Carlo simulation
33 Csaba, G. Simulations on Magnetic Field-Coupled Computing Devices
34 Wang, P.-F. Investigation of a novel tunneling transistor by MEDICI simulation
35 Castellazzi, A. Power-MOSFETs Compact-Modelling for Reliability in the 42V-PowerNet
36 Esseni, D. Full Band and Approximated Solutions of the Schrdinger Equation in Silicon Inversion Layers
37 Matsuzawa, K. Stable simulation of impurity fluctuation for contact resistance and Schottky diodes
38 Ouyang, Q. (C.) Simulation Study of Simple CMOS-Compatible Thin-SOI Vertical Bipolar Transistors on Thin BOX with an Inversion Collector
39 Maanane, H. Characterization and Modelling of RF LDMOS device for reliability study purpose
40 Chakarov, I. Modelling of Ion Implantation in SiC crystals
41 Tosaka, Y. An Accurate and Comprehensive Soft Error Simulator NISES II
42 Mandal, S.K. Realization of Symmetrical CMOS Using Dual-Channel hetero-FETs
43 Br, E. 3D Feature-Scale Simulation of Sputter Etching with Coupling to Equipment Simulation
44 Fhner, T. Genetic Algorithm for Optimization and Calibration in Process Simulation
45 Burenkov, A. 3D Simulation of Process Effects Limiting FinFET Performance and Scalability
46 Nguyen, P.-H. Adaptive Surface Triangulations for 3D Process Simulation
47 Matsuzawa, K. Simple simultaneous device and circuit simulation
48 Chakravorty, A. Neuro-Fuzzy Modeling of SiGe:C-HBTs: A Comparison with VBIC
49 Tanabe, R. CMOS Scaling Analysis based on ITRS Roadmap by Three-dimensional Mixed-mode Device Simulation
50 Dixit, A. Threshold Voltage Adjustment in Multi-gate FETs
51 Satoh, S. SPICE Parameter Extraction Method Based on Data-Curve Features
52 Chang, L. CMOS Circuit Performance Enhancement by Surface Orientation Optimization
53 Akil, N. SPICE-Compatible Macro Model for Split-Gate Compact Flash Cell with Various Gap Sizes
54 Li, Y. Numerical Simulation of Self-Heating Effects on High Frequency Multifinger HBTs
55 Li, Y. A Quantum-Corrected SPICE-Compatible Model for Ultrathin Oxide MOSFET Gate Tunneling Current Simulation
56 Li, Y. Comparison of Nanoscale Metal-Oxide-Semiconductor Field Effect Transistors
57 Lee, J.-W. A Computational Investigation of Grain Boundary Variation on Characteristics Fluctuation in Submicron Low Temperature Polysilicon Thin Film Transistors
 58 Radic, L. Modeling B uphill diffusion in the presence of Ge
59 Wang, X. Hole Mobility Enhancement Modeling and Scaling Study for High Performance Strained Ge Buried Channel PMOSFETs
60 Oldiges, P. Examination of Spatial Frequency Dependence of Line Edge Roughness on MOS Device Characteristics
61 Nagler, O. Avoidance of Oxide Cracks during "Probing Over Active Area" by Process and Layer Stack Optimization through FEA Simulations
62 Jacobs, W. Kersch, A. Modeling CVD effects in Atomic Layer Deposition on the Feature scale
63 Krivokapic, Z. Strain Scaling for Ultra Thin Silicon NMOS Devices
64 Krivokapic, Z. Implications of Gate Misalignment for Ultra-narrow Multi-gate Devices
65 Jin, S. A Monte-Carlo Method for Distribution of Standby Currents and its Application to DRAM Retention Time
66 Hong, S. An Efficient Method for Noise Simulation of MOSFET in Large-Signal Operation
67 Ezaki, T. Theoretical Analysis of Stress and Surface Orientation Effects on Inversion Carrier Mobility
68 Fujii, O. Modeling of Stress Induced Layout Effect on electrical characteristics of advanced MOSFETs
69 Iannaccone, G. Effective Bohm Quantum Potential for device simulation based on drift-diffusion and energy transport
70 Mugnaini, G. Proposal of Physics-based compact model for nanoscale MOSFETs including the transition from Drift-Diffusion to ballistic transport
71 Zhang, D. 2D Quantum Mechanical (QM) Charge Model and Its Application to Ballistic Transport of Sub-50nm Bulk Silicon MOSFETs
72 Le Royer, C. SET Accurate Compact Model for SET-MOSFET Hybrid Circuit Simulation
73 Godoy, A. Double Gate Silicon On Insulator devices operated as Velocity Modulation Transistors
74 Hwang, C.-O. Boron Transient Enhanced Diffusion Mechanism: interstitial-assisted or vacancy-assited?
75 Fuchs, E. A new backscattering model for nano-MOSFET compact modeling
76 Nayfeh, O.M. On the Relationship Between Carrier Mobility and Velocity in sub-50 nm NMOSFETs via Calibrated Monte Carlo Simulation
77 He, L. Computer Simulation in Enhanced Semiconductor Photodetector Performance
78 Kim, K. Quantum Mechanical Modeling for Electron Mobilibty in Strained Silicon Channel of Double Gate MOSFETs
79 Alexander, C. Impact of Scattering on the Random Dopant Induced Current Fluctuations in Decanano MOSFETs
80 Roy, G. Resolving Discrete Dopants in Drift Diffusion Simulation Using Bipolar Quantum Corrections
81 Gnani, E. Automatic Optimization Algorithm for a Direct 2D and 3D Mesh Generation from Layout Information
82 Rudan, M. A Method for Determining the Screening Length of the Coulombic Scattering in Non-Degenerate and Degenrate Semiconductors
83 Pavlov, B.S. Resonance Spin Filter
84 Takase, T. Plasma and Topography simualtion for HBr/Cl2 Reactive Ion Etching Process
85 Naeve, T. Physically based circuit simulation model of integrated photodiodes
86 Seidl, A. Meshless Methods: an Alternative to Classical Finite Elements in Semiconductor Process and Device Modelling
87 Choudhary, D. Understanding the role of strain in silicon-germanium devices using atomistic simulations
88 Mijalkovic, S. Reduced-Order Modeling of Small-Signal Semiconductor Device Operation
89 Lin, F. A fully integrated single photon detection avalanche photodiode with active bias controlling circuit
90 Du, G. Collision Broadening: Important Quantum Effect of Sub-100nm Device Simulation Based QBE by Monte Carlo Method
91 Liu, X. Drive Current Scaling Properties of GOI MOSFET in Nano-Scale
92 Tanaka, T. Analysis and modeling of size dependent mobility enhancement due to mechanical stress
93 Negulescu, C. An Accelerated Algorithm for Ballistic Quantum Transport Simulations in 2D Nanoscale MOSFETs
94 Dollfus, P. 3D Monte Carlo Analysis of Discrete Dopant Effects on Electron Velocity Fluctuations in Si Devices
95 Zhu, H. Modeling of the Correlation Factor of Impurity Diffusion in Diamond Lattice
96 Pakfar, A. Modeling dopant diffusion in SiGe and SiGeC layers
97 Lee, A. Ab initio noise simulation for decanano n-MOSFETs
98 Ito, C. A New Methodology for Efficient and Reliable Large-Signal Analysis of RF Power Devices
99 Zhang, J. Multiple Ion Implantation Simulation by TSUPREM-IV
100 Rudan, M. The Density-Gradient Correction as a Disguised Pilot Wave of de Broglie
101 Mohrhof, J. Experiments on minority carrier diffusion in silicon: Contribution of excitons
102 Pecchia, A. Atomistic simulations of molecular nanodevices
103 Sleiman, A. Surface States Induced Current Collapse in GaN-Based HEMT's: Theoretical and Experimental Investigations
104 Guo, W.-L. Characterizing and Simulation of Photo-Bidirectional Negative Resistance Transistor (PBNRT)
105 Chun, J.-H. Electro-thermal Simulations of Strained-Si MOSFETs under ESD conditions
106 Shin, M. Two-Dimensional Quantum Effects in Nanoscale Schottky Barrier MOSFETs
107 Navarro, D. Modeling of Carrier Transport Dynamics at GHz-Frequencies for RF Circuit-Simulation
108 Sadachika, N. Fully-Depleted SOI-MOSFET Model for Circuit Simulation and its Application to 1/f Noise Analysis
109 Petri, F. Squeeze-Film Damping in Various Knudsen Regimes Applied to Accelerometers
110 Jang, J. Small-Signal Modeling of RF CMOS
111 Lin, M.T. Asymmetric Gate Misalignment Effect on Subthreshold Characteristics of Double-Gate SOI NMOS Devices Considering Fringing Electric Field Effect
112 Krishnamohan, T. Very High Performance, Sub-20nm Strained Si and Si_x Ge_1-x, Hetero-structure, Center Channel (CC) NMOS and PMOS DGFETs
113 Lorenzini, M. Source-Side Injection modeling by means of the Spherical-Harmonics Expansion of the BTE
114 Kim, S.-D. Optimization of Recessed and Elevated Silicide Source/Drain Contact Structure Using Physical Compact Resistance Modeling and Simulation in Ultra-Thin Body SOI MOSFETs
115 Bloomfield, M.O. Simulation of Microstructure Formation and Evolution during Thin Film Deposition
116 Subba, N. Optimal Contact Placement in Partially Depleted SOI Structures with Application to Raised Source-Drain Structures
117 Icaza Deckelmann, A. Simulation of the failure mechanism for power DMOS transistors under avalanche stress
118 Thalhammer, R. Optimization of BAW resonator performance using combined simulation techniques
119 Groos, G. Simulation of the cross-coupling among snap back devices under transient high current stress
120 Akturk, A. Numerical Performance Analysis of Carbon Nanotube (CNT) Embedded MOSFETs
121 Kang, E.-S. The Nanocapacitance-Voltage Modeling for the Quantitative Multi-Dimensional Dopant Profile Measurement
122 Wittmann, R. Monte Carlo Simulation of Ion Implantation in Silicon-Germanium Alloys
123 Ayalew, T. Accurate Modeling of Lattice Site-Dependent Ionization Level of Impurities in alpha-SiC Devices
124 Grasser, T. On the Validity of the Relaxation Time Approximation for Macroscopic Transport Models
125 Hssinger, A. Full Three-Dimensional Analysis of a Non-Volatile Memory Cell
126 Wagner, S. Performance Evaluation of Linear Solvers Employed for Semiconductor Device Simulation
127 Hollauer, C. Calibration of a Three-Dimensional Oxidation Model for Wet Oxidation in (111) oriented Silicon
128 Pourfath, M. Three-Dimensional Analysis of Schottky Barrier Carbon Nanotube Field Effect Transistors
129 Sheikholeslami, A. Inverse Modeling of Deposition Simulations Using Measurements of a TEOS CVD Process
130 Sheikholeslami, A. Three-Dimensional Simulation of Void Formation for Interlayer Dielectric Deposition in a RAM8D Cell
131 Ceric, C. The Evolution of the Resistance and Current Density During Electromigration
132 Wessner, W. Anisotropic Laplace Refinement for Three-Dimensional Oxidation Simulation
133 Gehring, A. On the Calculation of Quasi-Bound States and Their Impact on Direct Tunneling in CMOS Devices
134 Guo, W.-L. The simulation of Bipolar/MOSFET Hybrid Mode Transistor with Si/GeSi Heterojunction Base
135 Shao, X. A Hybrid 3D Quantum Mechanical Simulation of FinFETs and Nanowire Devices
136 Koleva, E. Relief resist profile optimisation at electron beam lithography
137 Ogawa, M. Quantum Mechanical Simulation in DG MOSFETs Based on a Tight Binding Green's Function Formalism
138 Gortinskaya, L. V. Resonances caused by coupling windows in nanolayers
139 Tesovskaya, E.S. Ballistic electron transport in coupled waveguides: asymptotic approach
140 Heitzinger, C. On the Simulation of 25nm MOSFETs and the Influence of the Electron-Electron Interactions
141 Kwon, O. Molecular Dynamics (MD) Calculation for Low-energy Ion Implantation Process with Dynamic Annealing Effect"
142 Pennington, G. Phonon-Limited Transport and Mobility in Carbon Nanotubes
143 Ravichandran, K. Ab-Initio Study of Dopant Segregation at Si/SiO_2 and Si/High-K Interfaces
144 Soelkner, G. Reliability of Power Electronic Devices against Cosmic Radiation-Induced Failure
145 Racko, J. Donoval, D. Modeling and Simulation of Combined Thermionic Emission-Tunneling Current through Interfacial Isolation Layer at Schottky Contact
146 Pethe, A. Krishnamohan, T. Analytical Modeling of Ge and Si Double-Gated(DG) NFETs and the Effect of Process Induced Variations (PIV) on Device Performance
147 Ravariu, C. From SOI Devices to a Nano-Transistor
148 Stefanescu, E. Super radiant dissipative tunneling of a system of electrons in a micro cavity p-i-n structure
149 Ruhstaller, B. Parameter Extraction and Validation of an Electronic and Optical model for Organic Light-emitting Devices
150 Barbarada, F. TCAD-MOSFET Simulation and Optimization
151 Horn, A. Three-Dimensional Simulation of Orientation-Dependent Wet Chemical Etching