Low VCE(sat) transistor (strobe flash)

2SD2118

zFeatures zDimensions (Unit : mm)

1) Low VCE(sat).
VCE(sat) = 0.25V (Typ.) 2SD2118
(IC/IB = 4A / 0.1A)
2) Excellent DC current gain characteristics.
3) Complements the 2SB1412.

zStructure
Epitaxial planar type
NPN silicon transistor

ROHM : CPT3 (1) Base

EIAJ : SC-63 (2) Collector
(3) Emitter

Denotes hFE

zAbsolute maximum ratings (Ta=25C)

Parameter Symbol Limits Unit
Collector-base voltage VCBO 50 V
Collector-emitter voltage VCEO 20 V
Emitter-base voltage VEBO 6 V
IC 5 A(DC)
Collector current
ICP 10 A(Pulse) 1

Collector power 1 W
dissipation 2SD2118 PC
10 W(Tc=25C)
Junction temperature Tj 150 C
Storage temperature Tstg 55 to +150 C
1 Single pulse Pw=10ms

zElectrical characteristics (Ta=25C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO 50 V IC=50A
Collector-emitter breakdown voltage BVCEO 20 V IC=1mA
Emitter-base breakdown voltage BVEBO 6 V IE=50A
Collector cutoff current ICBO 0.5 A VCB=40V
Emitter cutoff current IEBO 0.5 A VEB=5V
Collector-emitter saturation voltage VCE(sat) 0.3 1.0 V IC/IB=4A/0.1A
DC current transfer ratio hFE 120 390 VCE=2V, IC=0.5A
Transition frequency fT 150 MHz VCE=6V, IE=50mA, f=100MHz
Output capacitance Cob 35 pF VCE=20V, IE=0A, f=1MHz
Measured using pulse current.

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 2SD2118 Data Sheet

zPackaging specifications and hFE

Package Taping
Code TL
Type hFE Basic ordering unit (pieces) 2500
2SD2118 QR

hFE values are classified as follows :

Item Q R
hFE 120 to 270 180 to 390

zElectrical characteristic curves

10 5 5000
VCE=2V 50mA 30mA Ta=25C Ta=25C
5 COLLECTOR CURRENT : IC (A)
45mA 25mA 2000
COLLECTOR CURRENT : IC (A)

2 Ta=100C 20mA
4

DC CURRENT GAIN : hFE

1 25C 15mA 1000
25C
0.5 500 VCE=5V
10mA
3 40mA
0.2 35mA 200 2V
0.1
0.05 100 1V
2 5mA
0.02 50
0.01
1 20
5m
2m 10
1m 0 IB=0mA 5
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0.4 0.8 1.2 1.6 2.0 1m 2m 5m 0.010.02 0.050.1 0.2 0.5 1 2 5 10

BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A)

Fig.1 Grounded emitter propagation Fig.2 Grounded emitter output Fig.3 DC current gain vs.
characteristics characteristics collector current ( )

COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

5000 5000 2
VCE=1V VCE=2V Ta=25C
2000 2000 1
Ta=100C Ta=100C
DC CURRENT GAIN : hFE

DC CURRENT GAIN : hFE

1000 1000
25C 25C 0.5
25C 25C
500 500

0.2
200 200
100 100 0.1
50 50
0.05 IC/IB=50
20 20 40
0.02 30
10 10
10
5 5 0.01
1m 2m 5m 0.010.02 0.05 0.10.2 0.5 1 2 5 10 1m 2m 5m0.010.02 0.050.10.2 0.5 1 2 5 10 2m 5m0.010.02 0.05 0.1 0.2 0.5 1 2 5 10

COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A)

Fig.4 DC current gain vs. Fig.5 DC current gain vs. Fig.6 Collector-emitter
collector current ( ) collector current ( ) saturation voltage vs.
collector current ( )
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

2 2
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

2 lC/lB=30 lC/lB=40
lC/lB=10
1 1
1

0.5 0.5 0.5

Ta=100C
Ta=100C 25C Ta=100C
25C 0.2 25C 0.2 25C
0.2
25C 25C
0.1 0.1
0.1

0.05 0.05
0.05

0.02 0.02
0.02
0.01 0.01
0.01 2m 5m0.010.02 0.05 0.1 0.2 0.5 1 2 5 10 2m 5m0.010.02 0.05 0.1 0.2 0.5 1 2 5 10
2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)

Fig.7 Collector-emitter Fig.8 Collector-emitter Fig.9 Collector-emitter

saturation voltage vs. saturation voltage vs. saturation voltage vs.
collector current ( ) collector current ( ) collector current (IV)

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 2SD2118 Data Sheet

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

: Cib (pF)
2 1000 1000
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

lC/lB=50 Ta=25C Ta=25C

TRANSITION FREQUENCY : fT (MHz)

500 VCE=6V f=1MHz
1 500 IC=0A
200 IE=0A
0.5
Ta=100C 100
200 Cib

EMITTER INPUT CAPACITANCE

25C
0.2 25C 50
100
0.1 20
10 50
0.05
5 Cob
0.02 20
2
0.01 1 10
2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10 1m 2m 5m10m20m 50m0.1 0.2 0.5 1 0.1 0.2 0.5 1 2 5 10 20 50
COLLECTOR CURRENT : IC (A) EMITTER CURRENT : IE (A) COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.10 Collector-emitter Fig.11 Gain bandwidth product vs. Fig.12 Collector output capacitance vs.
saturation voltage vs. emitter current collector-base voltage
collector current (V) Emitter input capacitance vs.
emitter-base voltage

Ta=25 (C)
50 Single pulse
COLLECTOR CURRENT : IC (A)

20
Ic max (Pulse)
10
Pw

Ic max (Pulse)
5
=1
Pw

0m

2
=1

s
D

00

1
C

ms

500m
200m
100m
50m
20m
10m
0.2 0.5 1 2 5 10 20 50 100 200 500

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.13 Safe operating area

(2SD2118)

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