TPC8014

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

TPC8014
Lithium Ion Battery Applications
Unit: mm
Portable Equipment Applications
Notebook PC Applications

Small footprint due to small and thin package

Low drain-source ON resistance: RDS (ON) = 11 m (typ.)
High forward transfer admittance: |Yfs| = 10 S (typ.)
Low leakage current: IDSS = 10 A (max) (VDS = 30 V)
Enhancement-mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS 30 V

Drain-gate voltage (RGS = 20 kW) VDGR 30 V
Gate-source voltage VGSS 20 V
DC (Note 1) ID 11
Drain current A
Pulse (Note 1) IDP 44 JEDEC

Drain power dissipation (t = 10 s) JEITA

PD 1.9 W
(Note 2a) TOSHIBA 2-6J1B
Drain power dissipation (t = 10 s)
PD 1.0 W Weight: 0.08 g (typ.)
(Note 2b)
Single pulse avalanche energy
EAS 157 mJ
(Note 3)
Avalanche current IAR 11 A Circuit Configuration
Repetitive avalanche energy 8 7 6 5
EAR 0.19 mJ
(Note 2a) (Note 4)
Channel temperature Tch 150 C
Storage temperature range Tstg -55 to 150 C

Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
1 2 3 4
This transistor is an electrostatic sensitive device. Please handle with
caution.

1 2003-02-20
 TPC8014
Thermal Characteristics

Characteristics Symbol Max Unit

Thermal resistance, channel to ambient

Rth (ch-a) 65.8 C/W
(t = 10 s) (Note 2a)
Thermal resistance, channel to ambient
Rth (ch-a) 125 C/W
(t = 10 s) (Note 2b)

Marking (Note 5)

TPC8014 TYPE

Lot No.

Note 1: Please use devices on condition that the channel temperature is below 150C.

Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)

FR-4 FR-4
25.4 25.4 0.8 25.4 25.4 0.8
(unit: mm) (unit: mm)

(a) (b)

Note 3: VDD = 24 V, Tch = 25C (initial), L = 1.0 mH, RG = 25 W, IAR = 11 A

Note 4: Repetitive rating: pulse width limited by max channel temperature

Note 5: on lower left of the marking indicates Pin 1.

Weekly code: (Three digits)

Week of manufacture
(01 for first week of year, continues up to 52 or 53)

Year of manufacture
(One low-order digits of calendar year)

2 2003-02-20
 TPC8014
Electrical Characteristics (Ta = 25C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = 16 V, VDS = 0 V 10 mA

Drain cut-OFF current IDSS VDS = 30 V, VGS = 0 V 10 mA
V (BR) DSS ID = 10 mA, VGS = 0 V 30
Drain-source breakdown voltage V
V (BR) DSX ID = 10 mA, VGS = -20 V 15
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.3 2.5 V
VGS = 4.5 V, ID = 5.5 A 15 22
Drain-source ON resistance RDS (ON) mW
VGS = 10 V, ID = 5.5 A 11 14
Forward transfer admittance |Yfs| VDS = 10 V, ID = 5.5 A 5 10 S
Input capacitance Ciss 1860
Reverse transfer capacitance Crss VDS = 10 V, VGS = 0 V, f = 1 MHz 270 pF
Output capacitance Coss 320

Rise time tr 9
ID = 5.5 A
VGS 10 V VOUT
Turn-ON time ton 0V 19

RL = 2.7 W
Switching time 4.7 W ns
Fall time tf 20

VDD ~
- 15 V
Turn-OFF time toff < 69
Duty = 1%, tw = 10 ms
Total gate charge
Qg 39
(gate-source plus gate-drain)
VDD ~
- 24 V, VGS = 10 V, ID = 11 A nC
Gate-source charge 1 Qgs1 4
Gate-drain (miller) charge Qgd 9

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Drain reverse current Pulse (Note 1) IDRP 44 A

Forward voltage (diode) VDSF IDR = 11 A, VGS = 0 V -1.2 V

3 2003-02-20
 TPC8014

ID VDS ID VDS
20 10
3.4 3.3 10 3.2
3.1
8
3.5 6
16 4 3.2 8 4 3.3
6 3.0

(A)
(A)

8 3.
10 3.1 3.4

ID
ID

12 6
2.9

Drain current
Drain current

3.0

8 4
2.9
2.8

2.8
4 2 2.7
2.7
2.6

VGS = 2.6 V VGS = 2.5 V

0 0
0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0

Drain-source voltage VDS (V) Drain-source voltage VDS (V)

ID VGS VDS VGS

20 1
Common source Common source
VDS = 10 V Ta = 25C
Pulse test Pulse test
(V)

16 0.8
(A)

VDS
ID

12 0.6
Drain-source voltage
Drain current

100

8 0.4

Ta = -55C
25 2.5
4 0.2 5.5
ID = 11A

0 0
0 0.5 1 1.5 2 2.5 3 2.5 4 0 4 8 12 16 20

Gate-source voltage VGS (V) Gate-source voltage VGS (V)

|Yfs| ID RDS (ON) ID

100
Common source
(S)

Ta = 25C
Pulse test
Yfs

Drain-source ON resistance

30
-55C Tc = 100C
RDS (ON) (mW)

VGE = 4.5 V
Forward transfer admittance

10 VGS = 10 V

25C

3
Common source
VDS = 10 V
Pulse test
1
0.1 1 10 100 1 3 10 30 100

Drain current ID (A) Drain current ID (A)

4 2003-02-20
 TPC8014

RDS (ON) Ta (a) IDR VDS

25 100

5
ID = 11, 5.5, 2.5 A

(A)
20 10
Drain-source ON resistance

Drain reverse current IDR

3 1
10 VGS = 10 V
RDS (ON) (W)

15 VGS = 4.5 V

10 ID = 11, 5.5, 2.5 A

1

10
5
Common source Common source
Ta = 25C
Pulse test
Pulse test
0 0.1
-80 -40 0 40 80 120 160 0 0.2 0.4 0.6 0.8 1 1.2

Ambient temperature Ta (C) Drain-source voltage VDS (V)

Capacitance VDS Vth Ta

10000 3
Gate threshold voltage Vth (V)

2.5

Ciss
(pF)

1000 2
Capacitance C

1.5
Coss
Crss
100 1
Common source
Common source VDS = 10 V
0.5
VGS = 10 V ID = 1 mA
ID = 1 mA
Pulse test Pulse test
10 0
0.1 1 10 100 -80 -40 0 40 80 120

Drain-source voltage VDS (V) Ambient temperature Ta (C)

PD Ta Dynamic input/output characteristics

2 30 30
(1) Device mounted on a Common source
(1) glass-epoxy board (a)
(Note 2a) Ta = 25C
(W)

25 25
(V)

(V)

1.6 (2) Device mounted on a ID = 11 A

glass-epoxy board (b)
Pulse test
PD

VDS

VGS

(Note 2b) VDD = 24 V

20 20
t = 10 s
Drain power dissipation

1.2 VDS
Drain-source voltage

Gate-source voltage

(2)
15 15
12 6
0.8
12
10 10
6
0.4 VDD = 24 V
5 5

0 0 0
0 50 100 150 200 0 10 20 30 40 50 60

Ambient temperature Ta (C) Total gate charge Qg (nC)

5 2003-02-20
 TPC8014

rth - tw
1000
(1) Device mounted on a glass-epoxy board (a)
(Note 2a)
Normalized transient thermal impedance (2)
(2) Device mounted on a glass-epoxy board (b)
(Note 2b)
t = 10 s
100
(1)
rth (C/W)

10

Single pulse
0.1
0.001 0.01 0.1 1 10 100 1000

Pulse width tw (S)

Safe operating area

100

1 ms*
ID max (pluse) *
10
(A)

10 ms*
ID
Drain current

0.1
* Single pulse
Ta = 25C
Curves must be derated
linearly with increase in VDSS max
temperature.
0.01
0.01 0.1 1 10 100

Drain-source voltage VDS (V)

6 2003-02-20
 TPC8014

RESTRICTIONS ON PRODUCT USE 000707EAA

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc..

The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customers own risk.

The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

The information contained herein is subject to change without notice.

7 2003-02-20
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.