FGH40T120SMD / FGH40T120SMD_F155 1200 V, 40 A FS Trench IGBT

July 2013

FGH40T120SMD / FGH40T120SMD_F155
1200 V, 40 A FS Trench IGBT
Features General Description
FS Trench Technology, Positive Temperature Coefficient Using innovative field stop trench IGBT technology, Fairchilds
High Speed Switching new series of field stop trench IGBTs offer the optimum
Low Saturation Voltage: VCE(sat) =1.8 V @ IC = 40 A performance for hard switching application such as solar
100% of the Parts tested for ILM(1) inverter, UPS, welder and PFC applications.
High Input Impedance
RoHS Compliant

Applications
Solar Inverter, Welder, UPS & PFC applications.

E C
C
G

G
COLLECTOR
(FLANGE)
E

Absolute Maximum Ratings T C = 25C unless otherwise noted

Symbol Description Ratings Unit

VCES Collector to Emitter Voltage 1200 V
Gate to Emitter Voltage 25 V
VGES
Transient Gate to Emitter Voltage 30 V
Collector Current @ TC = 25oC 80 A
IC
Collector Current @ TC = 100oC 40 A
ILM (1) Clamped Inductive Load Current @ TC = 25oC 160 A
ICM (2) Pulsed Collector Current 160 A
Diode Continuous Forward Current o 80 A
IF @ TC = 25 C
Diode Continuous Forward Current @ TC = 100oC 40 A
IFM Diode Maximum Forward Current 240 A
Maximum Power Dissipation @ TC = 25oC 555 W
PD
Maximum Power Dissipation @ TC = 100oC 277 W
o
TJ Operating Junction Temperature -55 to +175 C
o
Tstg Storage Temperature Range -55 to +175 C
Maximum Lead Temp. for soldering o
TL 300 C
Purposes, 1/8 from case for 5 seconds

Thermal Characteristics
Symbol Parameter Typ. Max. Unit
o
RJC(IGBT) Thermal Resistance, Junction to Case -- 0.27 C/W
o
RJC(Diode) Thermal Resistance, Junction to Case -- 0.89 C/W
o
RJA Thermal Resistance, Junction to Ambient -- 40 C/W

Notes:
1. Vcc = 600 V,VGE = 15 V, IC = 160 A, RG = 10 , Inductive Load
2. Limited by Tjmax

2013 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGH40T120SMD / FGH40T120SMD_F155 Rev. C2
 FGH40T120SMD / FGH40T120SMD_F155 1200 V, 40 A FS Trench IGBT
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FGH40T120SMD FGH40T120SMD TO-247 A03 - - 30
FGH40T120SMD FGH40T120SMD_F155 TO-247G03 - - 30

Electrical Characteristics of the IGBT TC = 25C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 uA 1200 - - V
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 uA
IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - 400 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 40 mA, VCE = VGE 4.9 6.2 7.5 V
IC = 40 A, VGE = 15 V
- 1.8 2.4 V
TC = 25oC
VCE(sat) Collector to Emitter Saturation Voltage
IC = 40 A, VGE = 15 V,
TC = 175oC - 2.0 - V

Dynamic Characteristics
Cies Input Capacitance - 4300 - pF
VCE = 30 V, VGE = 0 V,
Coes Output Capacitance - 180 - pF
f = 1MHz
Cres Reverse Transfer Capacitance - 100 - pF

Switching Characcteristics
td(on) Turn-On Delay Time - 40 - ns
tr Rise Time - 47 - ns
td(off) Turn-Off Delay Time VCC = 600 V, IC = 40 A, - 475 - ns
tf Fall Time RG = 10 , VGE = 15 V, - 10 - ns
Inductive Load, TC = 25oC
Eon Turn-On Switching Loss - 2.7 - mJ
Eoff Turn-Off Switching Loss - 1.1 - mJ
Ets Total Switching Loss - 3.8 - mJ
td(on) Turn-On Delay Time - 40 - ns
tr Rise Time - 55 - ns
td(off) Turn-Off Delay Time VCC = 600 V, IC = 40 A, - 520 - ns
tf Fall Time RG = 10 , VGE = 15 V, - 50 - ns
Inductive Load, TC = 175oC
Eon Turn-On Switching Loss - 3.4 - mJ
Eoff Turn-Off Switching Loss - 2.5 - mJ
Ets Total Switching Loss - 5.9 - mJ
Qg Total Gate Charge - 370 - nC
VCE = 600 V, IC = 40 A,
Qge Gate to Emitter Charge - 23 - nC
VGE = 15 V
Qgc Gate to Collector Charge - 210 - nC

2013 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FGH40T120SMD / FGH40T120SMD_F155 Rev. C2
 FGH40T120SMD / FGH40T120SMD_F155 1200 V, 40 A FS Trench IGBT
Electrical Characteristics of the DIODE TC = 25C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit

IF = 40 A, TC = 25oC - 3.8 4.8 V
VFM Diode Forward Voltage
o
IF = 40 A, TC = 175 C - 2.7 - V
trr Diode Reverse Recovery Time VR = 600 V, IF = 40 A, - 65 - ns
diF/dt = 200 A/us, TC = 25oC
Irr Diode Peak Reverse Recovery Current - 7.2 - A
Qrr Diode Reverse Recovery Charge - 234 - nC
trr Diode Reverse Recovery Time VR = 600 V, IF = 40 A, - 200 - ns
diF/dt = 200 A/us, TC = 175oC
Irr Diode Peak Reverse Recovery Current - 18.0 - A
Qrr Diode Reverse Recovery Charge - 1800 - nC

2013 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FGH40T120SMD / FGH40T120SMD_F155 Rev. C2
 FGH40T120SMD / FGH40T120SMD_F155 1200 V, 40 A FS Trench IGBT
Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

300 300
o o 17V
TC = 25 C 20V 15V TC = 175 C 20V
17V
250 250 15V

Collector Current, IC [A]

Collector Current, IC [A]

200 200

12V
150 150
12V

100 100
VGE=10V VGE=10V

50 50

0 0
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Figure 3. Typical Saturation Voltage Figure 4. Saturation Voltage vs. Case

Characteristics Temperature at Variant Current Level
160 4
Common Emitter Common Emitter
Collector Emitter Voltage, VCE [V]

VGE = 15V VGE = 15V

o
TC = 25 C
Collector Current, IC [A]

120 o
TC = 175 C ---
3
80A

80

40A
2
40
IC=20A

0 1
0 1 2 3 4 5 25 50 75 100 125 150 175
o
Collector-Emitter Voltage, VCE [V] Case Temperature TC [ C]

Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE

20 20
Common Emitter Common Emitter
o o
Collector Emitter Voltage, VCE [V]

Collector Emitter Voltage, VCE [V]

TC = 25 C TC = 175 C
16 16
80A

80A
12 12
40A
40A
8 8

IC=20A
IC=20A
4 4

0 0
0 4 8 12 16 20 0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]

2013 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FGH40T120SMD / FGH40T120SMD_F155 Rev. C2
 FGH40T120SMD / FGH40T120SMD_F155 1200 V, 40 A FS Trench IGBT
Typical Performance Characteristics

Figure 7. Capacitance Characteristics Figure 8. Load Current vs. Frequency

6000 200
Common Emitter VCC = 600V
VGE = 0V , f = 1MHz load Current : peak of square wave
5000 Ciss TC = 25 C
o
160

Collector Current, IC [A]

Cappacitance [pF]

4000
120 o
TC = 100 C
3000
80
2000
Coss
40 Duty cycle : 50%
1000 Crss T = 100 C
o
C
Powe Dissipation = 277 W
0
1 10 1k 10k 100k 1M
Collector-Emitter Voltage, VCE [V] Switching Frequency, f [Hz]

Figure 9. Turn-on Characteristics vs. Figure 10. Turn-off Characteristics vs.

Gate Resistance Gate Resistance
1000

1000
tr
Switching Time [ns]

td(off)
100
Switching Time [ns]

100
td(on)
tf
Common Emitter
10
VCC = 600V, VGE = 15V
10
IC = 40A
Common Emitter
o
TC = 25 C VCC = 600V, VGE = 15V, IC = 40A
o o o
TC = 175 C TC = 25 C , TC = 175 C
1 1
0 10 20 30 40 50 0 10 20 30 40 50 60 70
Gate Resistance, RG []
Gate Resistance, RG []

Figure 11. Swithcing Loss vs. Figure 12. Turn-on Characteristics vs.
Gate Resistance Collector Current

tr
10
Eon
100
Switching Loss [mJ]

Switching Time [ns]

Eoff
td(on)
1
Common Emitter
VCC = 600V, VGE = 15V
Common Emitter
IC = 40A VGE = 15V, RG = 10
o o
TC = 25 C TC = 25 C
0.1 10
o o
TC = 175 C TC = 175 C

0 10 20 30 40 50 60 70 10 20 30 40 50 60 70 80
Gate Resistance, RG [] Collector Current, IC [A]

2013 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FGH40T120SMD / FGH40T120SMD_F155 Rev. C2
 FGH40T120SMD / FGH40T120SMD_F155 1200 V, 40 A FS Trench IGBT
Typical Performance Characteristics

Figure 13. Turn-off Characteristics vs. Figure 14. Swithcing Loss vs.
Collector Current Collector Current
1000 30

td(off) 10 Eon
Switching Time [ns]

Switching Loss [mJ]

100
Eoff

1
tf
10 Common Emitter
VGE = 15V, RG = 10
Common Emitter o
TC = 25 C
VGE = 15V, RG = 10 o
o o TC = 175 C
TC = 25 C , TC = 175 C
1 0.1
20 40 60 80 10 20 30 40 50 60 70 80
Collector Current, IC [A] Collector Current, IC [A]

Figure 15. Gate Charge Characteristics Figure 16. SOA Characteristics

15
IcMAX (Pulsed)
100
10s
12
Gate Emitter Voltage, VGE [V]

200V 400V 100s

IcMAX (Continuous)
Collector Current, Ic [A]

VCC = 600V 1ms

10 10 ms
9
DC Operation

1
6
Single Nonrepetitive
o
0.1 Pulse Tc = 25 C
3 Curves must be derated
Common Emitter
o
linearly with increase
TC = 25 C in temperature
0 0.01
0 50 100 150 200 250 300 350 400 0.1 1 10 100 1000
Gate Charge, Qg [nC] Collector-Emitter Voltage, VCE [V]

Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current

10
Reverse Recovery Currnet, Irr [A]

diF/dt = 200 A/s

100 8
Forward Current, IF [A]

6 diF/dt = 100 A/s

10
4

o
TC = 25 C VR = 600 V, IF = 40 A
2 o
o
TC = 175 C --- TC = 25 C
1
0 1 2 3 4 5 0 10 20 30 40 50 60 70 80
Forward Voltage, VF [V] Foward Current, IF [A]

2013 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FGH40T120SMD / FGH40T120SMD_F155 Rev. C2
 FGH40T120SMD / FGH40T120SMD_F155 1200 V, 40 A FS Trench IGBT
Typical Performance Characteristics

Figure 19. Reverse Recovery Time Figure 20. Stored Charge

100 400
VR = 600 V, IF = 40 A

Stored Recovery Charge, Qrr [nC]

Reverse Recovery Time, trr [ns]

o
TC = 25 C
90
300
diF/dt = 200 A/s

80
200
diF/dt = 100 A/s
diF/dt = 100 A/s
70

100
60 diF/dt = 200 A/s
VR = 600 V, IF = 40 A
o
TC = 25 C
50 0
0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80
Forward Current, IF [A] Forwad Current, IF [A]

Figure 21. Transient Thermal Impedance of IGBT

1
Thermal Response [Zthjc]

0.5
0.1
0.3

0.1
PDM
0.01 0.05
t1
t2
0.02
Duty Factor, D = t1/t2
0.01 single pulse Peak Tj = Pdm x Zthjc + TC
1E-3
1E-6 1E-5 1E-4 1E-3 0.01 0.1 1
Rectangular Pulse Duration [sec]

2013 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FGH40T120SMD / FGH40T120SMD_F155 Rev. C2
 FGH40T120SMD / FGH40T120SMD_F155 1200 V, 40 A FS Trench IGBT
Mechanical Dimensions

TO - 247A03

2013 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com

FGH40T120SMD / FGH40T120SMD_F155 Rev. C2
 FGH40T120SMD / FGH40T120SMD_F155 1200 V, 40 A FS Trench IGBT
Mechanical Dimensions

TO-247G03

2013 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com

FGH40T120SMD / FGH40T120SMD_F155 Rev. C2
 FGH40T120SMD / FGH40T120SMD_F155 1200 V, 40 A FS Trench IGBT
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Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Advance Information Formative / In Design may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
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No Identification Needed Full Production
make changes at any time without notice to improve the design.

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Obsolete Not In Production
Semiconductor. The datasheet is for reference information only.
Rev. I64

2013 Fairchild Semiconductor Corporation 10 www.fairchildsemi.com

FGH40T120SMD / FGH40T120SMD_F155 Rev. C2