8550

PNP Silicon Epitaxial Planar Transistor

for switching and amplifier applications. Especially
suitable for AF-driver stages and low power output
stages.

The transistor is subdivided into four groups, B, C, D

and E, according to its DC current gain. As
complementary type the NPN transistor ST 8050 is
recommended.

On special request, these transistors can be

manufactured in different pin configurations.

TO-92 Plastic Package

Weight approx. 0.19g

Absolute Maximum Ratings (Ta = 25)

Symbol Value Unit

Collector Emitter Voltage -VCEO 25 V
Collector Base Voltage -VCBO 40 V
Emitter Base Voltage -VEBO 6 V
Collector Current -IC 800 mA
Peak Collector Current -ICM 1 A
Base Current -IB 100 mA
1)
Power Dissipation Ptot 625 mW
O
Junction Temperature Tj 150 C
O
Storage Temperature Range TS -55 to +150 C
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
8550

Characteristics at Tamb=25 OC

Symbol Min. Typ. Max. Unit

DC Current Gain
at -VCE=1V, -IC=100mA ST 8550B hFE 70 - 120 -
ST 8550C hFE 120 - 200 -
ST 8550D hFE 160 - 300 -
ST 8550E hFE 300 - 380 -
at -VCE=1V, -IC=350mA hFE 60 - - -
Collector Cutoff Current
at -VCB=35V ICBO - - 100 nA
Collector Saturation Voltage
at -IC=500mA, -IB=50mA VCE(sat) - - 0.5 V
Base Saturation Voltage
at -IC=500mA, -IB=50mA VBE(sat) - - 1.2 V
Collector Emitter Breakdown Voltage
at -IC=2mA V(BR)CEO 25 - - V
Collector Base Breakdown Voltage
at -IC=10A V(BR)CBO 40 - - V
Emitter Base Breakdown Voltage
at -IE=100A V(BR)EBO 6 - - V
Gain Bandwidth Product
at -VCE=5V, -IC=10mA, f=50MHz fT - 100 - MHz
Collector Base Capacitance
at -VCB=10V, f=1MHz CCBO - 12 - pF
1)
Thermal Resistance Junction to Ambient RthA - - 200 K/W
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
8550

Admissible power dissipation Collector current

versus ambient temperature versus base emitter voltage
Valid provided that leads are kept at
ambient temperature
at a distance of 2 mm from case
W ST 8550 mA ST 8550
1 3
10
5 25 oC
o
-50 C
2
0.8
10 2 o
150 C
5

Ptot 0.6 -IC typical

2 limits
at Tamb=25o C
10
5
0.4
2

1
0.2 5

0 10 -1
0 o
200 C 0 1 2V
100
Tamb -VBE

Pulse thermal resistance

versus pulse duration
Valid provided that leads are kept at
Collector cutoff current
ambient temperature versus ambient temperature
at a distance of 2 mm from case
nA
K/W ST 8550 4 ST 8550
10
3 10
5 5

2 2
2 -ICES 3
10 10
0.5
5 5
rthA 0.2 2
2
0.1 2
10 10
0.05
5 5
0.02

2 2

1
0.01
tp 10
5 tp 5
0.005 v= PI
T
v=0
2 2
T
10 -1
-6 -5 -4 -3 -2 -1 2 1
10 10 10 10 10 10 1 10 10 S
0 100
tp
Tamb
8550
DC current gain
Common emitter
versus collector current
collector characteristics

mA ST 8550
ST 8550 500
1000 0.9
-V CE =1V 0.85
700

500 400
400 o
150 C
300

oC 300
200 =25 -IC
h FE b
Tam 0.8
-50 o C
100

70
200

50
40
30 100 0.75

20
-VBE=0.7V
0
10 0 1 2V
10 -1 1 10 10 2 10 3

-I C -VCE

Common emitter
Com m on em itter
collector characteristics
collector characteristics

mA ST 8550
mA ST 8550
500 100
3.2 2.8 0.35

2.4
80
400 0.3
2
1.8
1.6 0.25
300 -IC 60
-IC 1.4
1.2
0.2
1
200 40
0.8 0.15

0.6
0.1
100 0.4 20
-IB =0.05mA

-I B = 0.2mA
0 0
0 1 2V 0 10 20V

-V CE -V CE
8550

C ollecto r satu ratio n voltage Gain bandwidth product

versus collecto r curren t versus collector current

V S T 8550 MHz ST 8550

0.5
10 3 o
typical
Tamb=25 C
lim its 7
f=20MHz
at Tam b=25o C
0.4 5
-Ic 4
= 10
-I B 3

- V C E sat 0.3 2 -V CE =5V

fT

10 2 1V

0.2 7

5
4
o 3
0.1 25 C
o
150 C 2
o
-50 C
0
10 -1 1 10 10 2 10 3 m A 10
2
1 2 5 10 2 5 10 2 5 10 3 mA
-I C
-IC
Base saturation voltage
versus collector current

V ST 8550
2
typical
lim its
at Tam b=25o C

-Ic
=10
-I B
- V BE sat

1
o
-50 C
oC
25

o
150 C

0
10 -1 1 10 10 2 10 3 m A

-I C