Documente Academic
Documente Profesional
Documente Cultură
July 2007
FGL40N120AN IGBT
1200V NPT IGBT
Features Description
High speed switching Employing NPT technology, Fairchilds AN series of IGBTs pro-
vides low conduction and switching losses. The AN series offers
Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A
an solution for application such as induction heating (IH), motor
High input impedance control, general purpose inverters and uninterruptible power
supplies (UPS).
Applications
Induction Heating, UPS, AC & DC motor controls and general
purpose inverters.
TO-264
G C E E
Thermal Characteristics
Symbol Parameter Typ. Max. Units
RJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.25 C/W
RJA Thermal Resistance, Junction-to-Ambient -- 25 C/W
Off Characteristics
BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1200 -- -- V
BVCES/ Temperature Coefficient of Breakdown
VGE = 0V, IC = 1mA -- 0.6 -- V/C
TJ Voltage
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 1 mA
IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- 250 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 250A, VCE = VGE 3.5 5.5 7.5 V
IC = 40A, VGE = 15V -- 2.6 3.2 V
Collector to Emitter IC = 40A, VGE = 15V,
VCE(sat) -- 2.9 -- V
Saturation Voltage TC = 125C
IC = 64A, VGE = 15V -- 3.15 -- V
Dynamic Characteristics
Cies Input Capacitance -- 3200 -- pF
VCE = 30V, VGE = 0V
Coes Output Capacitance -- 370 -- pF
f = 1MHz
cres Reverse Transfer Capacitance -- 125 -- pF
Switching Characteristics
td(on) Turn-On Delay Time -- 15 -- ns
tr Rise Time -- 20 -- ns
td(off) Turn-Off Delay Time -- 110 -- ns
VCC = 600V, IC = 40A,
tf Fall Time RG = 5, VGE = 15V, -- 40 80 ns
Inductive Load, TC = 25C
Eon Turn-On Switching Loss -- 2.3 3.45 mJ
Eoff Turn-Off Switching Loss -- 1.1 1.65 mJ
Ets Total Switching Loss -- 3.4 5.1 mJ
td(on) Turn-On Delay Time -- 20 -- ns
tr Rise Time -- 25 -- ns
td(off) Turn-Off Delay Time -- 120 -- ns
VCC = 600V, IC = 40A,
tf Fall Time RG = 5, VGE = 15V, -- 45 -- ns
Eon Turn-On Switching Loss Inductive Load, TC = 125C -- 2.5 -- mJ
Eoff Turn-Off Switching Loss -- 1.8 -- mJ
Ets Total Switching Loss -- 4.3 -- mJ
Qg Total Gate charge -- 220 330 nC
VCE = 600V, IC = 40A,
Qge Gate-Emitter Charge -- 25 38 nC
VGE = 15V
Qgc Gate-Collector Charge -- 130 195 nC
2 www.fairchildsemi.com
FGL40N120AN Rev. A1
FGL40N120AN 1200V NPT IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Saturation Voltage
Characteristics
300 160
TC = 25C
20V Common Emitter
17V VGE = 15V
250 15V o
TC = 25 C
120 o
TC = 125 C
Collector Current, IC [A]
150 80
40
50
0 0
0 2 4 6 8 10 0 2 4 6
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]
Figure 3. Saturation Voltage vs. Case Figure 4. Load Current vs. Frequency
Temperature at Variant Current Level
5 80
Common Emitter VCC = 600V
VGE = 15V Load Current : peak of square wave
70
Collector-Emitter Voltage, VCE [V]
4 60
80A
Load Current [A]
50
3 40
40A
30
2 20
IC = 20A
Duty cycle : 50%
10
TC = 100C
Power Dissipation = 100W
1 0
25 50 75 100 125 0.1 1 10 100 1000
Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE
20 20
Common Emitter Common Emitter
TC = 25C TC = 125C
Collector-Emitter Voltage, VCE [V]
16 16
12 12
8 8
80A 80A
4 4 40A
40A
IC = 20A IC = 20A
0 0
0 4 8 12 16 20 0 4 8 12 16 20
3 www.fairchildsemi.com
FGL40N120AN Rev. A1
FGL40N120AN 1200V NPT IGBT
Typical Performance Characteristics (Continued)
tr
3000
Figure 9. Turn-Off Characteristics vs. Figure 10. Switching Loss vs. Gate Resistance
Gate Resistance
Eon
100
Eoff
tf
10
0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70
Figure 11. Turn-On Characteristics vs. Figure 12. Turn-Off Characteristics vs.
Collector Current Collector Current
100
tf
td(on)
10
20 30 40 50 60 70 80 20 30 40 50 60 70 80
4 www.fairchildsemi.com
FGL40N120AN Rev. A1
FGL40N120AN 1200V NPT IGBT
Typical Performance Characteristics (Continued)
Figure 13. Switching Loss vs. Collector Current Figure 14. Gate Charge Characteristics
16
Common Emitter Common Emitter
VGE = 15V, RG = 5 RL = 15
14
TC = 25C Vcc = 200V
10 Eon TC = 25C
600V
10
400V
Eoff 8
1
6
0.1 0
20 30 40 50 60 70 80 0 50 100 150 200 250
Ic MAX (Pulsed)
50s
100 Ic MAX (Continuous)
100s 100
Collector Current, Ic [A]
1ms
10
DC Operation
1
10
Single Nonrepetitive
0.1 o
Pulse Tc = 25 C
Curves must be derated
linearly with increase Safe Operating Area
o
in temperature VGE = 15V, TC = 125 C
0.01 1
0.1 1 10 100 1000 1 10 100 1000
1
Thermal Response [Zthjc]
0.1 0.5
0.2
0.1
t1
t1
0.02
t2
t2
0.01
single pulse Duty
Dutyfactor
factorDD==t1
t1//t2
t2
Peak
PeakTj PdmZthjc
Tj==Pdm Zthjc++TTCC
1E-3
1E-5 1E-4 1E-3 0.01 0.1 1 10
5 www.fairchildsemi.com
FGL40N120AN Rev. A1
FGL40N120AN 1200V NPT IGBT
Mechanical Dimensions
TO-264
20.00 0.20
6.00 0.20
(4.00)
(2.00)
(8.30) (8.30)
(1.00)
(9.00)
(9.00)
(0.50)
(11.00)
(R
3.3
2.0
20.00 0.20
0)
0 0
(R1
.20
.00
1.50 0.20
)
(2.00)
(7.00) (7.00)
4.90 0.20
2.50 0.10
(1.50)
(1.50) (1.50)
20.00 0.50
+0.25
1.00 0.10
+0.25
5.45TYP 5.45TYP 0.60 0.10 2.80 0.30
[5.45 0.30] [5.45 0.30]
5.00 0.20
3.50 0.20
(0.15)
(2.80)
(1.50)
Dimensions in Millimeters
6 www.fairchildsemi.com
FGL40N120AN Rev. A1
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.