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MAXIMUM RATINGS
Rating Symbol Value Unit
DrainSource Voltage VDSS 36 Vdc
DrainGate Voltage (RGS = 1 M) VDGR 36 Vdc
GateSource Voltage VGS 20 Vdc
Drain Current Continuous ID 6 Adc
Total Device Dissipation @ TC = 25C PD 50 Watts
Derate above 25C 0.29 W/C
Storage Temperature Range Tstg 65 to +150 C
Operating Junction Temperature TJ 200 C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RJC 3.5 C/W
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage (VGS = 0, ID = 5 mAdc) V(BR)DSS 36 Vdc
Zero Gate Voltage Drain Current (VDS = 15 Vdc, VGS = 0) IDSS 5 mAdc
GateSource Leakage Current (VGS = 20 Vdc, VDS = 0) IGSS 2 Adc
(continued)
NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss 33 pF
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Output Capacitance Coss 74 pF
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Reverse Transfer Capacitance Crss 7 8.8 10.8 pF
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
R1 B1
VGG + + VDD
C1
R2 C2 B1 C12 C13
C3 Socket
C11
L1
Z4 R3 DUT L2
RF N1 Z1 C4 Z2 Z3 Z6 Z7 Z8 Z9 Z10 C10 Z11 N2 RF
Input Output
C5 C7 C8 C9
Z5 C6
25 25
IDQ = 100 mA Pin = 1.5 W
f = 400 MHz 470 MHz
f = 520 MHz
Pout , OUTPUT POWER (WATTS)
10 10
VDD = 12.5 V
5 5
IDQ = 100 mA
0 0
0 0.5 1 1.5 2 2.5 6 8 10 12 14 16
Pin, INPUT POWER (WATTS) VDD, SUPPLY VOLTAGE (VOLTS)
Figure 2. Output Power versus Input Power Figure 3. Output Power versus Supply Voltage
25 2
VDD = 12.5 V 1.8 VDS = 10 V
Pin = 1.5 W
Pout , OUTPUT POWER (WATTS)
Figure 4. Output Power versus Gate Voltage Figure 5. Drain Current versus Gate Voltage
VGS , GATE-SOURCE VOLTAGE (NORMALIZED)
200 1.04
VGS = 0 1.03 VDD = 12.5 V ID = 1.5 A
f = 1 MHz
1.02
150 ID = 1 A
C, CAPACITANCE (pF)
1.01
1.00
Coss
100 0.99
0.98
0.97
50
Ciss 0.96 ID = 0.5 A
ID = 0.05 A
Crss 0.95 ID = 0.25 A
0 0.94
0 5 10 15 20 25 30 25 0 25 50 75 100 125 150 175
VDS, DRAINSOURCE VOLTAGE (VOLTS) TC, CASE TEMPERATURE (C)
10
0.1
1 10 100
VDS, DRAINSOURCE VOLTAGE (VOLTS)
Figure 8. DC Safe Operating Area
f Zin ZOL*
(MHz) () ()
ID = 50 mA
f S11 S21 S12 S22
MHz |S11| |S21| |S12| |S22|
50 0.63 123 8 100 0.063 11 0.79 149
NOT RECOMMENDED FOR NEW DESIGN
ID = 100 mA
f S11 S21 S12 S22
MHz |S11| |S21| |S12| |S22|
50 0.67 136 9.1 99 0.047 10 0.82 158
100 0.66 153 4.6 84 0.048 3 0.85 168
200 0.71 160 2.2 66 0.043 17 0.87 172
300 0.77 163 1.3 54 0.037 26 0.90 174
400 0.82 165 0.89 44 0.031 32 0.92 175
500 0.86 168 0.64 36 0.025 35 0.94 177
700 0.91 173 0.37 25 0.015 30 0.96 179
850 0.93 176 0.27 20 0.010 11 0.97 179
1000 0.95 179 0.20 16 0.009 25 0.98 177
ID = 500 mA
f S11 S21 S12 S22
MHz |S11| |S21| |S12| |S22|
50 0.81 150 11.1 98 0.027 11 0.85 168
100 0.81 164 5.6 86 0.027 2 0.87 174
200 0.82 170 2.7 73 0.025 5 0.88 176
300 0.84 173 1.7 63 0.023 9 0.89 177
400 0.86 174 1.2 55 0.020 9 0.91 178
500 0.88 175 0.92 47 0.018 7 0.92 179
700 0.91 178 0.57 35 0.013 7 0.94 180
850 0.93 180 0.43 29 0.013 26 0.95 178
1000 0.94 178 0.33 23 0.014 44 0.96 177
ID = 2.5 A
f S11 S21 S12 S22
MHz |S11| |S21| |S12| |S22|
50 0.86 144 10.1 101 0.022 15 0.85 171
100 0.85 161 5.2 88 0.022 5 0.87 175
200 0.86 170 2.5 74 0.021 1 0.89 177
300 0.87 173 1.6 64 0.019 4 0.90 178
400 0.89 175 1.1 55 0.017 2 0.91 178
500 0.91 176 0.84 48 0.015 2 0.93 179
700 0.93 179 0.52 37 0.013 22 0.95 179
850 0.94 179 0.39 30 0.014 39 0.96 178
1000 0.95 177 0.30 26 0.016 52 0.96 176
-A- Q 2 PL
IDENTIFICATION L 0.15 (0.006) M T A M N M
NOTCH NOTES:
NOT RECOMMENDED FOR NEW DESIGN
CASE 31907
ISSUE M
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