08.807 MWandOptical Manual v1.2 Faculty

Department of Electronics and Communication Engineering
MAR BASELIOS COLLEGE OF ENGINEERING AND TECHNOLOGY
BETHANY HILLS, NALANCHIRA, TRIVANDRUM-695015
FACULTY LAB MANUAL
13.707 MICROWAVE & OPTICAL COMMUNICATION LAB
Prepared by Authorized by
Ms Anu R G & Ms Sreedevi P Ms Jayashree M J
Assistant Professor Associate Professor
Dept. of ECE HoD
Dept. of ECE
Microwave & Optical Communication Lab Manual 2016
Manual Version :
Version Date Prepared by Approved by Remarks
Mr. Arun P. S.
1.0 15 01- 2012 Prof. S. Viswanatha Rao 2008 Scheme
Ms. Deepa P. L.
Ms Anu R G
2.0 30 06 - 2016 Ms Jayashree M J 2013 Scheme
Ms Sreedevi P
Dept. of ECE, MBCET 2

Vision of the Institute
To be an Institution moulding globally competent Professionals as epitomes of Noble Values.
Mission of the Institute
To transform the Youth as technically competent, ethically sound and socially committed professionals,
by providing a vibrant learning ambience, for the welfare of humanity.
Vision of the Department
To be a Centre of Excellence in Electronics and Communication Engineering Education and Research

for the service of humanity.
Mission of the Department
To provide quality Engineering Education and to carry out Research in the field of Electronics and
Communication Engineering addressing the challenges faced by the society.

DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING

B.TECH IN ELECTRONICS AND COMMUNICATION ENGINEERING
PROGRAMME EDUCATIONAL OBJECTIVES (PEOs):
I. The graduates of the Programme will have successful careers in Industry that meets the needs of
Indian and Multinational Companies or will be successful in the pursuit of advanced studies.
II. Our graduates will have a sound foundation in the Mathematics, Science and Engineering
necessary to formulate, analyze and solve technical problems, addressing the needs of the society.
III. They will be capable of working as part of teams on multidisciplinary projects and will be able to
take up leadership roles.
IV. They will have the ability to apply technical concepts to provide innovative solutions for better
quality of life.
V. They will pursue lifelong learning and will be adhering to professional ethics and codes of
professional practice.
PROGRAMME OUTCOMES(POs):
a) an ability to apply knowledge of mathematics, science and engineering
b) an ability to design and conduct experiments, as well as to analyze and interpret data
c) an ability to design a system, component, or process to meet desired needs within realistic
constraints such as economical, environmental, social, political, ethical, health and safety,
manufacturability and sustainability
d) an ability to function on multidisciplinary teams
e) an ability to identify, formulate and solve engineering problems
f) an understanding of professional and ethical responsibility
g) an ability to communicate effectively
h) an ability to understand the impact of engineering solutions in a global, economic, environmental
and societal context
i) a recognition of the need for, and an ability to engage in life-long learning
j) a knowledge of contemporary issues
k) an ability to use the techniques, skills and modern engineering tools necessary for engineering
practice
l) an ability to do research activities in various areas like VLSI, Embedded systems, Signal
processing, Communication etc.
m) an ability to use softwares and equipments to analyze and interpret engineering.

MANUAL OUTLINE
This manual comprises of two parts. First section includes microwave and second section optical
communication lab experiments. Each experiment covers the experimental set up, model graph and
procedure for conducting the experiments.
Microwave lab makes the students aware of the microwave devices and its characteristics.
Students do various experiments in a microwave bench which is constituted by a microwave generator,
isolator, attenuator, frequency meter and detector. Frequency band used in microwave experiments is X-
band, which decides the dimension of rectangular waveguide used, which is 22.86mm x 10.18 mm.
Optical communication link comprises of an optical source, optical link and finally a detector.
Through this lab the students are getting familiarized with the properties, parameters and characteristics
of various optical sources, detectors and optical link. Along with that they are also getting an opportunity
to splice fibres and measure the losses.

08.508 MICROWAVE & OPTICAL COMMUNICATION LAB (T) 0-0-4
Part A: Microwave Experiments:
1. GUNN diode characteristics.

2. Reflex Klystron Mode Characteristics
3. VSWR and Frequency measurement.
4. Verify the relation between Guide wave length, free space wave length and cut off
wave length for rectangular wave guide.
5. Measurement of E-plane and H-plane characteristics.
6. Directional Coupler Characteristics.
7. Unknown load impedance measurement using smith chart and verification using
transmission line equation.
8. Measurement of dielectric constant for given solid dielectric cell.
9. Antenna Pattern Measurement
Part B: Optical Experiments:
1. Measurement of Numerical Aperture of a fiber, after preparing the fiber ends.

2. Preparation of a Splice joint and measurement of the splice loss.
3. Power Vs Current (P-I) characteristics and measure slope efficiency of Laser Diode.
4. Voltage Vs Current (V-I) characteristics of Laser Diode.
5. Power Vs Current (P-I) characteristics and measure slope efficiency of LED.
6. Voltage Vs Current (V-I) characteristics of LED.
7. Characteristics of Photodiode and measure the responsivity.
8. Characteristics of Avalanche Photo Diode (APD) and measure the responsivity.
9. Measurement of fiber characteristics, fiber damage and splice loss/connector loss by
OTDR.

PART A: MICROWAVE EXPERIMENTS

Course Outcomes
1. Determine the unknown impedance of the terminating microwave device using Smith Chart or
transmission line equation
2. Understand all basic Microwave devices and components
3. Sketch the radiation pattern of given antenna using microwave bench set up
4. Identify the dielectric material by measuring the dielectric constant using microwave bench set
up.
5. Learn few microwave measurements and analyze parameters
CO - PO mapping
Course Outcomes: Program Outcomes
After the completion of the course, the student will be a b c d e f g h i j k l m

able to
1 Determine the unknown impedance of the X X X X X X

terminating microwave device using Smith Chart or
transmission line equation
2 Understand all basic Microwave devices and X X X X X

components
3 Sketch the radiation pattern of given antenna using X X X X X X

microwave bench set up
4 Identify the dielectric material by measuring the X X X X

dielectric constant using microwave bench set up.
5 Learn few microwave measurements and analyze X X X X X

parameters
Course to PO mapping X X X X X X

PAGE
SI NO EXPERIEMNTS CO
NO :
1 Familiarization of Microwave Devices and Components
2 GUNN diode characteristics
3 Reflex Klystron Mode Characteristics
4 VSWR and Frequency measurement

Verify the relation between Guide wave length, free space wave length
5
and cut offwave length for rectangular wave guide.
6 Measurement of E-plane and H-plane characteristics
7 Directional Coupler Characteristics
Unknown load impedance measurement using smith chart and

9
verification using transmission line equation
10 Measurement of dielectric constant for given solid dielectric cell
11 Antenna Pattern Measurement.
12 Virtual Lab experiment
13 Expected Model Questions

PRECAUTIONS
Students should follow certain precautions as mentioned below, while they are doing microwave
experiments using klystron oscillator.
1. Do not look through the open end of the waveguide when microwave power supply is ON
2. Once the power supply has been turned ON, make sure that the beam current in klystron power
supply has not exceeded 25mA.
3. Once the power supply has been turned ON, make sure that the beam voltage of the klystron
power supply does not exceed 295V.
4. Before you turn OFF the supply, turn OFF the HT switch, and then ensure that beam voltage and
current has attained zero value.
5. Never keep the Gunn bias in its threshold point for a long period of time.

EXPERIMENT 1
FAMILIARIZATION OF MICROWAVE COMPONENTS AND DEVICES
Aim: - To familiarize various microwave devices and components
Rectangular waveguide
Wave guides are manufactured to the highest mechanical and electrical standards and mechanical
tolerances. L and S band wave guides are fabricated by precision brazing of brass-plates and all other
wave guides are in extrusion quality. W.G. sections of specified length can be supplied with flanges,
painted outside and silver or gold plated in side.
SPECIFICATIONS ( X Band )
Model No. : WR - 90
Frequency : 8.2 - 12.4 GHZ
Width : 2.286cm Height : 1.1016cm
Material : Brass/Copper.
Waveguide detector mount (tunable)

Model 451 Tunable Detector Mount is simple and easy to use instrument for detecting microwave power
throa suitable detector. It consists of a detector crystal mounted in a section of a Wave guide and shorting
plunger for matching purpose. The output from the crystal may be fed to an indicating instrument. In K
and R bands detector mounts the plunger is driven by a micrometer.
SPECIFICATIONS
Model No. : XD 4051
Freq. Range (Ghz) : 8.2 - 12.4
O/P Connector : BNC (F)
Wave guide type (WR-) : 90
Detector : IN23
Klystron mount

Klystron mounts are meant for mounting corresponding Klystrons such as 2K25, 723A/B, 726A or RK -
5976 etc. These consists of a section of wave guide flanged on one end and terminated with a movable
short on the other end. An octal base with cable is provided for Klystron.
SPECIFICATIONS
Model No. : X 251
Freq. Range (GHz) 8.2 - 12.4
WG Type (WR-) : 90
Circulators
Model 621 and 622 are T and Y types of three port circulators respectively. These are precisely machined
and assembled to get the desired specifications. Circulators are matched three port devices and these are
meant for allowing Microwave energy to flow in clockwise direction with negligible loss but almost no
transmission in the anti-clockwise direction.
SPECIFICATIONS
Model No. : XC 621
Frequency Range (Ghz) : 8.6 - 10.6 or 10.2 - 12.2
Min. Isolation (dB) : 20
Max. Insertion Loss (dB) : 0.4
Max. VSWR : 1.20
Multihole directional couplers

Multihole directional couplers are useful for sampling a part of Microwave energy for monitoring
purposes and for measuring reflections and impedance. These consist of a section of Wave guide with
addition of a second parallel section of wave guide thus making it a four port network. However the
fourth port is terminated with a matched load. These two parallel sections are coupled to each other
through many holes, almost to give uniform coupling; minimum frequency sensitivity and high
directivity. These are available in 3,6,10,20 and 40dB coupling.
SPECIFICATIONS
Model No. : XK - 603
Frequency Range (Ghz) : 8.2 - 12.4
Coupling (dB) : 3,10,20
Directivity (dB) : 35
Wave guide type (WR-) : 90

E plane tee
Model 361 E - plane tee are series type T - junction and consists of three section of wave guide joined
together in order to divide or compare power levels. The signal entering the first port of this T - junction
will be equally dividing at second and third ports of the same magnitude but in opp. phase .
SPECIFICATIONS
Model No. : XE - 361
WG Type (WR-) : 90
H plane tee
Model 365 H - Plane Tee are shunt type T - junction for use in conjunction with VSWR meters,
frequency - meters and other detector devices. Like in E-plane tee, the signal fed through first port of H -
plane Tee will be equally divided in magnitude at second and third ports but in same phase.
SPECIFICATIONS
Model No. : XE - 365
Frequency Range (GHz) : 8.2 - 12.4
WG Type (WR-) : 90
Magic tee

Model 350 E - H Tee consists of a section of wave guide in both series and shunt wave guide arms,
mounted at the exact midpoint of main arm. Both ends of the section of wave guide and both arms are
flanged on their ends. These Tees are employed in balanced mixers, AFC circuits and impedance
measurement circuits etc. This becomes a four terminal device where one terminal is isolated from the
input terminal.
SPECIFICATIONS
Model No. : XE- 350
WG Type (WR-) : 90
Movable short
Model 481 movable shorts consists of a section of waveguide, flanged on one end and terminated with a
movable shorting plunger on the other end. By means of this noncontacting type plunger, a reflection co-
efficient of almost unity may be obtained.
SPECIFICATIONS
Model No. : X - 481
Frequency Range (GHz) : 8.2 - 12.4
WG Type (WR-) : 90

Matched termination
Model 400 are low power and non-reflective type of terminations. It consists of a small and highly
dissapative taper flap mounted inside the centre of a section of wave guide. Matched Terminations are
useful for USWR measurement of various waveguide components. These are also employed as dummy
and as a precise reference loads with Tee junctions, directional couplers and other similar dividing
devices.
SPECIFICATIONS
Model No. : XL - 400,
Freq. Range (Ghz) : 8.2 - 12.4
Max VSWR : 1.04
AV Power : 2W,
WG Type- (WR-) 90,
Pyramidal waveguide horn antenna

Model 541 pyramidal Wave guide Horn antenna consists of waveguide joined to pyramidal section
fabricated from brass sheet. The pyramidal section shapes the energy to concentrate in a specified beam.
Wave guide horns are used as feed horns as radiators for reflectors and lenses and as a pickup antenna for
receiving microwave power.
SPECIFICATIONS
Model No. : XH - 541
Max VSWR : 1.20
WG Type (WR-) : 90
Gunn oscillators
Model 11 Gunn Oscillators are solid state microwave energy generators. These consists of waveguide
cavity flanged on one end and micrometer driven plunger fitted on the other end. A gunn-diode is
mounted inside the Wave guide with BNC (F) connector for DC bias. Each Gunn oscillator is supplied
with calibration certificate giving frequency vs micrometer reading.
SPECIFICATIONS
Model No. : XG-11
Freq : 8.2 - 12.4 Ghz
Min output power : 10 MW
WG Type (WR-) : 90

Pin modulators
Model 55 pin modulators are designed to modulate the cw output of Gunn Oscillators. It is operated by
the square pulses derived from the UHF(F) connector of the Gunn power supply. These consists of a pin
diode mounted inside a section of Wave guide flanged on its both end. A fixed attenuation vane is
mounted inside at the input to protect the oscillator.
SPECIFICATIONS
Model No. : XM -55
Max RF Power : 1W
WG Type (WR-) : 90
Gunn power supply

Model 610 Gunn Power supply comprises of an regulated DC power supply and a square wave generator,
designed to operate Gunn-Oscillator, and pin modulators model 451 respectively. The DC voltage is
variable from 0 - 10V. The front panel meter monitors the gunn voltage and the current drawn by the
Gunn diode. The square wave of generator is variable from 0 - 10V in amplitude and 900 - 1100 Hz in
frequency. The power supply has been so designed to protect Gunn diode from reverse voltage
application over transient and low frequency oscillations by the negative resistance of the Gunn-diode.
SPECIFICATIONS
Model No.: GS-610
Amplifier Type : High gain tuned at one frequency
Frequency : 1000 Hz 2%
Sensitivity : 0.1 microvolt at 200 for full scale
Band width : 25 - 30 cps
Range : 70dB min in 10 dB steps
Scale selector : Normal Expand
Gain control : Coarse & Fine
Mains power : 230V, 50Hz

Klystron power supply

Klystron power supply generates required beam and repeller voltage for the X-Band klystron tube like
2K25. It is very stable and contains the short circuit protection circuit. Also it has amplitude and
frequency modulation circuits for the generation of 1 KHz square wave and the saw tooth wave.
SPECIFICATIONS
Model: SKPS-610
Voltage Range: 200-450 V continuously Variable
Current: 50mA Max
Regulation: Better than 0.5% for 10% variation in the mains supply voltage
Ripple: Less than 5 mV rms
Repeller supply Voltage Range: 10V to 270 V DC Continuously variable with respect to klystron cathode
Regulation: 0.25% for 10% variation in the mains supply voltage
Heater Supply: 6.3 V DC (Regulated)
Modulation:
Square Wave: Max. Amplitude: + 110 V peak to peak
Freq.: 500 Hz-2000Hz Amplitude and frequency continuously variable
Sawtooth: Amplitude: -60 V max. peak to peak
Freq.: 50 Hz-150 Hz Amplitude and frequency continuously variable
Operating Voltage: 230V 10%, 50 Hz, A.
Frequency meter
\his is a absorption type resonant cavity, that produces a dip in the waveform passing through its
waveguide, when resonance occurs inside. Resonance inside the resonator can be effected by tuning the
hat like probe of the cylindrical cavity. The long scale length and numbered calibration around the
circumference of the cylindrical cavity provide high resolution which is particularly useful when
measuring frequency difference of small frequency changes.
SPECIFICATIONS:
Model no: XF 710
Frequency range: 8.2 -12.4 GHz

Waveguide type: WR- 90

Flange type: UG- 39/U
Calibration accuracy: 2%
Min. insertion loss: 0.2 dB
Slotted waveguide
Slotted section is used to measure various measuring parameter in microwave. for example to determine
VSWR, phase and impedances. These consists of a slot in center of waveguide in which we can connect a
probe and probe can be moved in slot and position of probe can be measured by its Vernier scale. The
travel of probe carriage is more than three times of half wavelength.
SPECIFICATIONS:
Model no: XS 651
Variable attenuator
Attenuators are required to adjust power or attenuate the power flowing in waveguide.There are two type
of attenuators fixed and variable. Fixed attenuators available in various range like 3dB,6dB,10dB etc.
These attenuators are calibrated at center frequency of respective frequency band. By Variable attenuators
power can be adjusted for different level.

SPECIFICATIONS:
Model no: XA 520
Av. Power: 2 W
Return Loss : -19.23 At 10.5GHz

EXPERIMENT NO: 2
V-I CHARACTERISTICS OF GUNN DIODE
AIM: To plot Voltage-Current characteristics of Gunn diode.
APPARATUS REQUIRED: Gunn oscillator, Gunn power supply, PIN modulator, Isolator, Frequency
meter, Variable attenuator, Detector mount, Waveguide stands, and CRO
THEORY: The function of a Gunn Oscillator is based on the negative differential conductivity effect in
bulk semiconductors. A disturbance at the cathode creates high field region. This high field region travels
towards anode, reacts with it and disappears. Another high field domain is created at cathode and moves
towards anode, this continues and transit time gives the oscillation frequency. In Gunn oscillator, a Gunn
diode is kept in the resonant cavity and the oscillation frequency is determined by the dimension of the
cavity.
PROCEDURE:
i) Set the variable attenuator for minimum attenuation

ii) Energize the Gunn oscillator and switch on CRO
iii) Set the micrometer of Gunn oscillator for the required operation say 9 GHz.
iv) To plot VI characteristics, change Gunn biasing in steps of 0.5V and record the
corresponding current in the table
v) Draw the characteristics with voltage along X axis and current along Y axis.
vi) Determine the threshold voltage.

Observations:
V(V) I(mA)
0.11 0.02
0.13 0.03
0.23 0.05
0.3 0.07
0.43 0.09
0.75 0.153
0.85 0.18
1 0.2
1.5 0.3
2 0.35
2.4 0.39
2.6 0.41
2.7 0.426
2.9 0.418
3.25 0.36
4.45 0.325
5.3 0.335
6 0.385

V-I characteristics of Gunn diode
REVIEW QUESTIONS
1. What are negative resistance devices?

2. What are the different modes of oscillations in a Gunn diode?
3. What is the significance of threshold voltage with respect to a Gunn diode?
4. What is the role of PIN modulator in a Gunn oscillator experiment set up?
5. What do you mean by 2 Valley theory?

EXPERIMENT NO: 3
REFLEX KLYSTRON MODE CHARACTERISTICS
AIM: To plot the mode characteristics of reflex klystron
APPARATUS REQUIRED: Klystron Power Supply, Klystron with mount, Isolator, Frequency meter,
Variable Attenuator, Slotted waveguide, CRO, Detector mount.
THEORY: Klystron is a microwave vacuum tube employing velocity modulation. It consists of an

electron gun producing a collimated electron beam. These electrons move towards the repeller, that is, the
electrons leaving the cavity during the positive half cycle are accelerated while those during negative half
cycle are decelerated. The faster ones penetrate further while slower ones penetrate lesser in the field of
repeller voltage. But, faster electrons leaving the cavity take longer time to return and hence catch up with
slower ones. In the cavity the electrons bunch and interact with the voltage between the cavity grids. It
bunches pass through grids at time the grid potentials is such that electrons are decelerated they give by
energy. The electrons are then collected by positive cavity wall near cathode. To protect the repeller from
damage, repeller voltage is applied before accelerating voltage.
PROCEDURE:
i) Assemble the components as shown in fig.

ii) After following the necessary precautions, the Klystron Power Supply is switched ON.
iii) To obtain peak voltage, the attenuator is positioned at its minimum attenuation.
iv) Vary the repeller voltage from its maximum negative value and increase it in steps and
record output power and frequency.

v) The frequency is measured by tuning the basic frequency meter to have a dip in the output
voltage each time.
vi) The frequency meter is detuned before measuring the output power each time.
vii) The mode characteristics of Reflex Klystron is plotted. (i.e. Output Voltage Vs Repeller
voltage and Frequency Vs Repeller voltage)
Obserations:
Vr (Vpp)2
-170 0
-167 0.06
-166 0.16
-164 0.27
-156 0.17
-152 0.06
-140 0
-130 0
-119 0.06
-116 0.18
-110 0.14
-100 0.09
-95 0
-90 0
-88 0.04
-87 0.03
-85 0.006
-60 0.002

Mode characteristics of reflex klystron
REVIEW QUESTIONS
1. List two basic configuration of Klystron tubes.

2. List down the characteristic of two cavity klystron amplifier.
3. Write a note on mode of oscillations
4. Draw the reflex klystron modes.
5. When the o/p power of reflex klystron maximum?
6. List the application of reflex klystron.
7. What is transit time?
8. Which mode number is most frequently used? Why?

EXPERIMENT NO: 4
LOW AND HIGH VSWR MEASUREMENT
AIM: To determine low value VSWR using matched termination and high value VSWR using a short
circuit, and also to evaluate the corresponding reflection coefficients.
Variable Attenuator, Slotted waveguide, matched termination, movable short, CRO, Detector mount.
THEORY: The electromagnetic field at any point of transmission line or waveguide may be considered
as the sum of two traveling waves: the incident wave propagates from generator and the reflected
wave propagates towards the generator. The reflected wave is set up by reflection of incident wave from
a discontinuity on the line or from the load impedance. The magnitude and phase of reflected wave
depends upon amplitude and phase of the load impedance. The presence of two traveling waves gives rise
to standing wave along the line. The maximum field strength is found where two waves are in phase and
minimum where they are in opposite phase. The distance between two successive minimum (or
maximum) is half the guided wave-length on the line. The ratio of electrical field strength of reflected and
incident wave is called reflection coefficient. The VSWR is defined as ratio between maximum and
minimum field strength along the line. Hence, VSWR is
where EI and ER are respectively the amplitudes of the incident and reflected electric field strengths.
Standing wave ratio is frequently expressed in decibels, VSWR (dB) = 20 log10 (s). Further, the ratio of
the reflected to the incident electric field intensities is defined as reflection coefficient, that is,

where ZL is the load impedance and Z0 is the characteristic impedance. Hence, VSWR can be expressed
in terms of reflection coefficient as follows:
When Emax = Emin , i.e., there is no reflection [ ER = 0 ], the resulting VSWR=1.00, this is the requirement
of a matched circuit. In other words, under given ideal conditions, the VSWR of a matched load is 1.00.
Under extreme mismatch conditions, Emin =0 i.e., total reflection, [ ER = EI ], the resulting VSWR = .
However, in most of the cases, VSWR is greater than 1.00. It is not rare to obtain VSWR as low as 1.02
in well-designed set-up having matched component
PROCEDURE:
Assemble the components as shown.

i) After following the necessary precautions, the Klystron Power Supply is switched ON.
ii) To measure low VSWR connect matched termination at the slotted waveguide end.
iii) Adjust the slotted waveguide and note down the amplitude of one maxima and one minima,
ratio of which gives VSWR (which is approx. 1)
iv) To measure high VSWR connect movable short at the end of slotted waveguide .
v) Adjust the slotted waveguide and note down the amplitude of one maxima and one minima,
ratio of which gives a high value VSWR .
1
vi) Calculate the reflection coefficient using the formula =
+1
Calculations:
For short circuit load, that gives high VSWR
1
max = 20mV, Vmin = 2.5mV, =
= 8, = +1
= 0.77
For matched load, that gives low VSWR
1
max = 19mV, Vmin = 18mV, =
= 1.05, = +1
= 0.024
REVIEW QUESTIONS
1. How are VSWR and reflection coefficient related?

2. Why is VSWR low, if a transmission line is terminated with a matched load?
3. Why is VSWR high, if a transmission line is terminated with a short circuit?

EXPERIMENT NO: 5
FREQUENCY AND WAVELENGTH MEASUREMENT
AIM: To determine the frequency of operation of the wave and verify the relation
1 1 1
2 = 2+ 2
0
Variable Attenuator, Slotted waveguide, CRO, Detector mount.
THEORY: Frequency of the wave generated using klystron can be measured using a frequency meter,
which is a resonant cavity. The volume inside cavity is proportional to the frequency traversing the
waveguide. The cavity volume is adjusted using a piston and when the volume becomes proportional to
frequency of the wave inside the waveguide, it gets absorbed into the cavity and resonates. The resonance
results in a dip in the waveform detected and displayed on CRO. The frequency meter which is calibrated
to read the frequency, shows the frequency of the resonant wave. For dominant TE10 mode in rectangular
1 1 1
waveguide 0, g, and c are related as below: = + , where 0 = is free space wavelength, g is
20 2 2 0
guide wavelength and c is cutoff wavelength. For TE10 mode, c = 2a, where a is the broad dimension
of waveguide, a=22.86mm and b=10.18mm.
PROCEDURE:

i) Assemble the components as shown in fig.

iv) Vary the repeller voltage from its maximum negative value until a good amplitude square
waveform is observed on CRO.
v) The frequency is measured by tuning the basic frequency meter to have a dip in the output
voltage each time.
vi) Using slotted waveguide find two successive minima = 2(2 1 ), by varying the probe
in the slotted section and observing the amplitude of the waveform in the CRO.
vii) For TE10 mode, c = 2a, where a is the broad dimension of waveguide, a=22.86mm.
1 1 1
viii) Verify the relation = +
20 2 2
Observations
Frequency observed using frequency meter, 0 = 9.89
Successive minima. 1 = 10.2 2 = 12.3
Guide wavelength = 2(2 1 ) = 4.2
Cut off wavelength for dominant mode, = 2 = 2 2.286
1 1 1
relation 20
= 2 + 2 is verified.

REVIEW QUESTIONS
1. Explain the working of frequency meter.
2. What are the two types of frequency meter?
3. Derive the relation c = 2a, where a is the broad dimension of waveguide
4. What is the difference among free space wavelength, guide wavelength and cut off wavelength?
5. Why is the difference between two successive minima points inside the wavelength half the guide
wavelength?

EXPERIMENT NO: 5
MEASUREMENT OF E AND H PLANE CHARACTERISTICS
AIM: To determine isolations, coupling coefficients and input VSWRs for E and H plane waveguide
Tee and Magic Tee junctions
APPARATUS REQUIRED: Klystron power supply, Klystron with mount, isolator, variable attenuator,
slotted section, Magic Tee, Matched termination, detector mount, CRO
THEORY: H Plane Tee
Figure 1 :- H Plane Tee
Fig 1 shows the sketch of an H plane tee. It is clear from the sketch that an auxiliary waveguide arm is
fastened perpendicular to the narrow wall of a main guide, thus it
is a three port device in which axis of the auxiliary or side arm is parallel to the planes of the magnic field
of the main of the main guide and the coupling from the main guide to the branch guide is by means of
magnetic fields. Therefore, it is also known as H plane tee. The perpendicular arm is generally taken as
input and other two arms are in shunt to
the input and hence it is also called as shunt tee. Because of symmetry of the tee; equivalent circuit of H
plane, when power enters the auxiliary arm, and the two main arms 1 and 2 are terminated in identical
loads, the power supplied to each load is equal a
nd in phase with one another. If two signals of equal amplitude and in same phase are fed into two main
arms1 and 2, they will be added together in the side arm. Thus H plane tee is an `adder

E Plane Tee
Figure 2:- E Plane Tee

Figure 2 and respectively show the sketch of the E plane tee. It is clear from the sketch of the E plane tee
that an auxiliary waveguide arm is fastened to the broader wall of the main guide. Thus it is also a three
port device in which the auxiliary arm axis in parallel
to the plane of the electric fields of the main guide, and the coupling from the main guide to the auxiliary
guide is by means of electric fields. Therefore, it is also known as E plane tee. It is clear that it causes
load connected to its branches to appear in series. So it is often referred to as a series tee. As indicated in
fig, the two main guide arms are symmetrical with respect to the auxiliary guide arm. As such if power is
fed from
the auxiliary arm, it is equally distributed in the two arms 1 and 2 when they are terminated in equal
loads. However as depicted in the field configuration, the power
flowing out in arm 1 is 180 out of phase to the one in arm 2. As such this tee is known as `subtracter or
`differencer
PROCEDURE:
E Plane, H Plane Tee Parameter
a) Isolation factor
The isolation of a T junction is the ratio of power supplied from a matched generator
to one of the arms, to the power coupled to a matched detector in any other arm when the
remaining arm is terminated in a matched load.
Isolation between port 1 and 2 is

I12= 10 log10P1/ P2dB, I12= 20 log10(V1/ V2) dB
And when matched load and detector are interchanged
I13= 10 log10P1/ P3dB, I13= 20 log10(V1/ V3) dB,

Similarly
I31= 10 log10P3 P1dB, I32= 20 log10(V3/ V2) dB
And when matched load and detector are interchanged
I33= 10 log10P3/ P2dB, I32= 20 log10(V3/ V2) dB
When arm 2 becomes the input, we will have other two values of isolation, I21andI23. Due to reciprocity
Property, I21will be the same as I12. Therefore, we shall measure only the first four isolation coefficients.
b) Coupling coefficient
Corresponding to the values of isolation, we can compute

The coupling coefficient by the formula

= 10 20
Where is the attenuation in db between the input and detector arm when the third arm is
terminated in a matched load. For example, the attenuation measured between arms 1 and 2 is 3 db when
arm 3 terminated in matched load, that is, the coupling coefficient between arms 1 and 2,
3
C12=10 20 =10 20 =0.708 dB
P4: power incident in port4(E-arm)
P3: power detected in port3 (H-arm)
Similarly isolation between other ports may also be defined and measured.
c)Coupling Coefficient:
The voltage coupling coefficient from arm I to arm j is defined as

Cij=10 20
c) Input VSWR
The are three values of input VSWR associated with a tee, one for each arm. The
VSWR of any arm of a tee is the voltage standing wave ratio existing on a transmission line terminated by
that arm of the tee when the other two arm of the tee are
terminated in matched loads
E-Plane and H Plane

INPUT VSWR
ISOLATION AND COUPLING COEFFICIENTS
ISOLATION AND COUPLING COEFFICIENTS

1. Generator to port i
2. Detector mount to port j (Vj)
3. All other ports terminated using matched termination
4. Iij= 20 log (Vi / Vj)
5. Cij= 10e- Iij/20
Where is the attenuation in db when I is the input and j the output arm. Thus
(db) = 10 log Pi/ Pj

where Pi is the power delivered to I arm by a matched generator and Pj is the power detected by a
matched detector in arm j
In the case of magic tee, there are 12 coupling constants, one for each of the arms as an input to each of
the other three arms as an output. However, if we have a perfectly matched detector and generator, Cij=
Cji and also the reciprocity desires C12= C21, C32= C31and C41= C42.
Procedure:
VSWR
1.Setup the components as shown, with port 1 of tee(E-plane/H-plane/Magic Tee) towards slotted line and
matched termination to other ports.
2.Energize the microwave source and set mode 3.
3.Calculate VSWR by measuring Vmaxand Vmin by adjusting the slotted line carriage.
4.Similarly connect other arms and calculated VSWR as above.
Isolation and Coupling Coefficient

1. Remove the slotted line and Magic Tee/E/H Tee and connect the detector mount.
2. Energize the microwave source and set mode 3.
3. Note down the input voltage as Vi(mv) (should not alter the setting)
4. Now connect the magic tee/E-Plane/H-Plane Tee.
5. Determine the corresponding voltages Vj(mv) for each pair of ports by connecting
one port to the source and measuring the output at other port while the remaining
ports are connected to matched termination.
6.Determine the isolation and coupling coefficients for the given Tee.
Result : Isolation, coupling coefficients and Input VSWRs for E, H and magic tee determined

EXPERIMENT NO: 6
LOSSES IN DIRECTIONAL COUPLER
AIM: To determine the insertion, coupling and isolation losses in a given circulator and then find its
directivity.
Variable Attenuator, 3 port directional coupler, matched termination, CRO, Detector mount.
THEORY: A directional coupler is a useful hybrid waveguide joint, which couples power in an
auxiliary waveguide arm in one direction. It is a four-port device but one of the ports is terminated into a
matched load.
Characteristics of a Directional Coupler: An ideal 4 port directional coupler has the following
characteristics :
If power is fed into port (1) the power is coupled in ports (2) and (3) i.e., power flows in the
forward direction of the auxiliary arm port (3) but no power couples in port (4) i.e., in backward
direction similarly power fed in (2) couples into ports (1) and (4) and not in (3).
All the four ports are matched, i.e. if three of them are terminated in matched loads, the fourth is
automatically terminated in a matched load.
If power couples in reverse direction, power fed in (1) appears in ports (2) and (4) and nothing in
(3), then such type of coupler is known as backward directional coupler. The conclusion is that in
the auxiliary section the power is coupled in only one direction.
\While a four port directional coupler is a bidirectional coupler, a three port directional coupler is
a unidirectional coupler.

PROCEDURE:
i) Assemble the components without a directional coupler as shown below.
waveform is observed on CRO, which should be the input to circulator port 1. Let the peak to
peak amplitude observed be V1.
v) Now connect the directional coupler as shown to measure the insertion loss and let the
voltage observed at port2 be V2.
vi) Now connect the directional coupler as shown to measure the isolation loss and let the
voltage observed at port3 be V4. Here port2 is the input port with input voltage V1.

Observations:
Output voltage at port 2 , 01 is 0.3V, and input at port 1

Output voltage at port 3, , 02 is 0.38V and input at port 1
Out put voltage at port 3 , 03is 0.4mV and input at port 2
CALCUALTIONS:
01 02
Insertion loss = 20 log ( ) dB = 4.4dB , Coupling loss = 20 log ( ) dB = 2.38dB

Isolation loss = 20 log ( 03 ) dB = 61.9dB

Directivity = Isolation loss Coupling loss~ 59dB

REVIEW QUESTIONS
1. What is the significance of directivity of a directional coupler?

2. What are the different types of directional coupler?
3. What are the applications of a directional coupler?

EXPERIMENT NO: 9
IMPEDANCE MEASUREMENT
AIM: To determine the unknown impedance of a given microwave device using Smith chart and verify it
using transmission line equation.
Variable Attenuator, Slotted waveguide, matched termination, movable short, CRO, Detector mount.
THEORY The unknown terminating impedance can be determined by measuring standing wave ratio &
distance of a convenient maxima or minima from the load. Normally for distance measurement minima is
used because it is more sharply defined. The unknown load admittances is given by the transmission
equation as:
( + 0 tan())
() = 0
(0 + tan()
Normalised w.r.t, 0 equation becomes,
() ( +0 tan()) +tan()
= = ,
0 (0 + tan() 1+tan()

where is the VSWR given by =
0
Impedance can be also calculated using Smith Chart.
PROCEDURE:
i) Assemble the components as shown.

iii) First connect the unknown load and find two successive minima d1,d2. Calculate the guide
wavelength, and VSWR .
iv) Now connect a movable short and find two successive minima d1, d2

v) Calculate D=d1-d1, and determine if it is towards load or generator

vi) Calculate /
vii) In smith chart first draw a circle of the obtained VSWR. Now find the corresponding
reactance arc either towards load or generator, as determined. The arc and the circle meets at
a point which is the normalized impedance.
viii) Verify using transmission line equation
Calculations
Using Smith Chart:
For short circuit, 1 = 8.4, 2 = 10.3
For matched load, 1 = 7.8, 2 = 10.9
0.2
= = = 1.25,
0.15
= 2(2 1 )=3.8cm

1 1
in terms of wavelength,
= 0.158 (towards generator)

Draw the circle of radius VSWR in Smith chart. Find the reactance curve for the corresponding
,
towards generator. The point where the reactance curve meets VSWR circle gives the value of normalized
impedance of the unknown impedance.
Using transmission line equation:
+() 2
= = 0.89 0.18 , where = = 1.65
1+()
REVIEW QUESTIONS
1. What is a Smith Chart?
2. Derive transmission line equations.
3. How do you determine in Smith chart if the reactance is towards load or towards generator?
4. What is the center point of a Smith chart?

EXPERIMENT NO: 10
DIELECTRIC MEASUREMENT
AIM: To determine the dielectric material of the given solid dielectric.
Variable Attenuator, Slotted waveguide, matched termination, movable short, CRO, Solid dielectric cell.
PROCEDURE:
i) Connect the components as shown without dielectric.
ii) Measure 2 successive minima. Let the first minima be Dr

iii) Insert the dielectric sample in the cell and measure its breadth and find the two successive
minima points. Let the first minima be D
tan tan ( +)
iv) Find
=
tan
v) Obtain x from the
table.
2 2
( ) ( ) +1

vi) Dielectric constant is calculated using = 2
2
( ) +1


Calculations:
= 0.8, is the width of the dielectric

d1 and d2 are the successive minima without dielectric, guide
wavelength is = 2(2 1 ) = 4.2
Difference between first minima with dielectric and first minima without dielectric, D=0.08m
tan tan ( +)

=
= 1.27, from tables = 23.4
2 2
( ) ( ) +1

Dielectric constant of the material, = 2 = 2.5, where a=22.86mm
2
( ) +1

REVIEW QUESTIONS
1. List the available dielectric materials.

2. How is guide wavelength related to dielectric constant?
3. How do you measure the dielectric constant of a liquid dielectric material?

EXPERIMENT NO: 7
ANTENNA GAIN AND RADIATION PATTERN
AIM: To evaluate the gain and plot the radiation pattern of a given horn antenna.
Variable Attenuator, transmitting and receiving horn antenna, CRO, Detector mount.
THEORY: A horn antenna may be regarded as a flared out or opened out wave guide. A wave guide is
capable of radiating radiation into open space provided the same is excited at one end and opened at the
other end. However, the radiation is much greater through wave guide than the 2 wire transmission line.
To overcome reflection and diffraction in the wave guide, the mouth of the waveguide is opened out
which assumes the shape of a electromagnetic horn. If the wave guide is terminated by any type of horn,
the abrupt discontinuity existed is replaced by a gradual transformation, then all the energy incident in
forward direction in the waveguide will now be radiated, provided the impedance matching is proper.
This improves directivity and reduces diffraction. If flaring is done only in one direction, then sectorial
horn is produced. If flaring is done along both the walls, then pyramidal horn is obtained. By flaring the
walls of the circular waveguide, a concial horn is formed. The fields inside the waveguide propagate in
the same manner as in free space, but on reaching the mouth of the waveguide, these propagating fields
continue to propagate in the same general direction but also starts spreading laterally and the wave front
eventually becomes spherical. However this may be treated as transition region where the change over
from the guided propagation to free space propagation occurs. Since the waveguide impedance & free
space impedance are not equal, hence to avoid standing wave ratio, flaring of walls of waveguide is done
which besides matching of impedance also provide concentrated radiation pattern(ie)greater directivity
and narrower beam width. It is the flared structure that is given the name electro magnetic horn radiator.
The function is to produce a uniform phase front with a larger aperture in comparison to waveguide and
thus directivity is greater. If flare angle is very large, the wavefront on the mouth of the horn will be
curved rather than plane. This will result in non-uniform phase distribution over the aperture, resulting in
increased beam width and reduced directivity, and vice versa occurs if the flare angle is very small.
4
The gain of a horn antenna is given by, = 0
, where s is the spacing between receiving and

transmitting horn antennas, 0 is the free space wavelength, is the received power and is the

transmitted power. Horn antennas are extensively used at microwave frequencies under the condition that
power gain needed is moderate.
PROCEDURE:
i) Assemble the components without antenna as shown below.
waveform is observed on CRO, which should be the input to circulator port 1. Let the peak to
peak amplitude observed be V1.
v) Using frequency meter, measure the frequency of wave used to transmit. Let the measured

frequency is 0 and then calculate the free space wavelength 0 = , where c is the speed of
0
light.
vi) Connect the horn antennas as shown:
vii) Measure the spacing s in meters between the transmitting and receiving horn antennas, at
which the receiving horn antenna detects maximum output.
viii) Rotate the receiving antenna through varying angles on a step of 5degrees and note down the
peak to peak output at each angle.
ix) Plot the radiation pattern in a polar graph with circles as received power in dB and rays as
angles in degrees.

CALCUALTIONS:
Vreceived = 0.5V, Vtransmitted = 0.9V, fobserved = 9.4GHz,
4s V
G= ( received )
0 Vtransmitted
= 8,
Angle () in degrees Voltage observed in Received power in

(both anti-clockwise CRO, Vr dB
and clockwise) (Received voltage )
-30 0.008 -42
-20 0.12 -18
-10 0.28 -11
0 0.52 -5
10 0.24 -12
20 0.16 -16
30 0.008 -42

Polar plot:
REVIEW QUESTIONS
1. List some of the types of antennas used in microwaves.

2. Why is a paraboloid preferred to horn at microwave frequencies?
3. Write the formula for directivity & power gain of horn antenna.
4. What are the different types of horn antenna is used in microwave frequencies?
5. List some common features of horn antenna.

Microwave Lab questions
1. Derive the expression for impedance in terms of VSWR of the unknown load from transmission
line equation. Determine the impedance of given matched termination with the help of Smith
Chart. Verify the same
2. Obtain the V-I characteristics of given Gunn diode. Also determine the frequency of operation
3. Using microwave bench experimental set up, plot the radiation pattern characteristics of given
horn antenna in a polar plot
4. Using microwave bench experimental set up circulate a microwave signal and then reduce the
output power by half
5. Obtain the V-I characteristics of a Gunn diode. Also determine the reflection coefficient of given
movable short
6. Plot the mode characteristics of a reflex klystron and note the frequency deviation of any one
mode
7. Calibrate the given variable attenuator and then find out the reflection coefficient of horn antenna
system.
8. Using microwave bench experimental setup , prove that for TE10 mode, the cut off wavelength of
a rectangular waveguide is equal to twice its broader dimension.
9. Determine the coupling coefficient and isolation loss of given magic tee

10. Calculate the directivity of a given directional coupler
11. Verify the relation (1/c)2+(1/g)2=(1/0)2
12. Using microwave bench experimental setup calculate the relative dielectric constant of ebonite
13. Using microwave bench experimental setup calculate the relative dielectric constant of Teflon
14. Determine the gain of given horn antenn
15. Using microwave bench experimental setup prove that c=2a

PART B: OPTICAL EXPERIMENTS

Course Outcomes
1. Calculate the numerical aperture of an optical fiber.

2. Analyze the characteristics of LED, LASER, PD and APD.
3. Analyze the losses in an optical communication link.
CO - PO mapping
Course Outcomes: Program Outcomes
After the completion of the course, the student will be a b c d e f g h i j k l m

able to
1 Find the numerical aperture of an optical fiber. X X X X X
2 Analyze the characteristics of LED, LASER, PD X X X X X

and APD.
3 Analyze the losses in an optical communication X X X X X X X X

link.
Course to PO mapping X X X X X X X X

SI NO: EXPERIEMNTS CO PAGE NO:

1 Voltage Vs Current (V-I) characteristics of LED. CO1 14
Power Vs Current (P-I) characteristics and measure slope
2 CO3 17
efficiency of LED.
3 Characteristics of Photodiode and measure the responsivity. CO3 20
Measurement of attenuation per unit length of a fiber using the
4 CO2 27
cutback method.
Measurement of Numerical Aperture of a fiber, after preparing
5 CO2 29
the fiber ends.
6 Voltage Vs Current (V-I) characteristics of Laser Diode. CO2 32
Power Vs Current (P-I) characteristics and measure slope
7 CO2 36
efficiency of Laser Diode.
Characteristics of Avalanche Photo Diode (APD) and measure
8 CO2 41
the responsivity.
9 Preparation of a Splice joint and measurement of the splice loss. CO2 46
Measurement of fiber characteristics, fiber damage and splice
10 loss/connector loss by Optical Time Domain Reflectometer CO3 51
(OTDR) technique.

EXPERIMENT NO: 1
VI characteristics of LED
Aim:
To plot the VI characteristics of LED
Theory:
An LED is a semiconductor pn junction which emits light as a result of electron-hole
recombination. The energy released when an electron falls from the conduction band to recombine with
a hole in the valence band, is equal to the bandgap energy Eg. The wavelength of the corresponding
photon emitted is given by
=hc/Eg
where h is Plancks constant(6.63*10-34 Js) and c the velocity of light(3*108 ms-1). If the bandgap
energy is expressed in eV, this expression reduces to
(m)=1.24/Eg(eV)
The optic power generated by an LED is linearly proportional to the forward driving current. This can be
understood as follows: the current I is the injected charge per second. The number of charges per second
is then N =i/e, where e is the magnitude of the charge on each electron. If is the fraction of these
charges that will recombine and produce photons, the optic power output will be
P = NEg = Eg i/e
Equipments:
1. LED Module
2. OFT power supply
3. Digital multimeter
4. Optic Power Meter
5. Optic Fiber(plastic)
The LED module has an 850nm LED connected in a circuit as shown below.

R1 is a fixed internal resistance (180).
Procedure:
1. Connect the OFT power supply to the module. Turn the pot to its minimum position and switch
ON the device. Connect the power meter to the LED output connector.
2. Measure the voltage V1 across R1 and hence calculate the current through LED
ILED=V1/180
3. Measure the voltage VLED across the LED
4. Turn the pot clockwise slightly towards the maximum position till we get a convenient V1 and
repeat steps 2 and 3 and tabulate them.
5. Repeat step 4 and note down several readings till the pot reaches its maximum position.
6. Plot VLED v/s ILED
NOTE: Since the power meter displays power in dBm, it needs to be converted to Watts or similar
units before plotting. Since 1mW= 0dBm, 10mW= 10 dBm and so on, 10P (in dBm)/10 will give the
power in mW.
P(dBm) = 10 log (P in mW)

= 10 log (P in W) + 30
= P(in dB) + 30

Expected Characteristics
Observations:
V1 (V) VLED (V) ILED (mA)
0.189 0.011 1.05

0.25 1.15 1.39
0.35 1.2 1.94
0.7 1.3 3.89
1.03 1.32 5.72
2.35 1.34 13.06
3.29 1.37 18.28
5.18 1.41 28.78
35
30
25
Current (mA)
20
15
ILED (mA)
10
0
0 0.5 1 1.5
Voltage (V)

EXPERIMENT NO: 2
PI characteristics of LED
Aim:
To plot the PI characteristics of LED
Theory:
An LED is a semiconductor PN junction which emits light as a result of electron-hole
recombination. The energy released when an electron falls from the conduction band to recombine with
a hole in the valence band, is equal to the bandgap energy Eg. The wavelength of the corresponding
photon emitted is given by
=hc/Eg
where, h is Plancks constant(6.63*10-34 Js) and c the velocity of light(3*108 ms-1). If the bandgap
energy is expressed in eV, this expression reduces to
(m)=1.24/Eg(eV)
The optic power generated by an LED is linearly proportional to the forward driving current. This can be
understood as follows: the current I is the injected charge per second. The number of charges per second
is then N =i/e, where e is the magnitude of the charge on each electron. If is the fraction of these
charges that will recombine and produce photons, the optic power output will be
P = NEg = Eg i/e
Equipments:
1. LED Module
2. OFT power supply
The LED module has an 850nm LED connected in a circuit as shown below.

R1 is a fixed internal resistance (180)

Procedure:
ON the device. Connect the power meter to the LED output connector.
ILED=V1/180
3. Note the power meter reading (PLED).
6. Plot PLED v/s ILED.
NOTE: Since the power meter displays power in dBm, it needs to be converted to Watts or similar
units before plotting. Since 1mW= 0dBm, 10mW= 10 dBm and so on, 10P(in dBm)/10 will give the
power in mW.
P(dBm)= 10 log (P in mW)

= 10 log (P in W) + 30
= P(in dB) + 30

Observations:
V1 (V) Power (dBm) Power (W) ILED (mA)
0.189 -66.9 0 1.05
0.25 -37.3 0.19 1.39
0.35 -34.6 0.35 1.94
0.7 -30.1 0.98 3.89
1.03 -20.3 9.33 5.72
2.35 -16.4 22.91 13.06
3.29 -14.4 36.31 18.28
5.18 -12.7 53.7 28.78
60
50
40
Power (W)
30
Power (W)
20
10
0
0 10 20 30 40
Current (mA)

EXPERIMENT NO: 3
PHOTODIODE CHARACTERISTICS
Aim:
To plot the VI and PI characteristics of photodiode.
Theory
Photodiodes are optical detectors, which absorb photons resulting in the creation of an electron-
hole pair, which is detected as a current (under the influence of a field). The simplest photodiode is an
ordinary pn junction working in reverse bias, under which condition there is a small amount of reverse
current flowing through it. Photons of sufficient energy can be absorbed and cause the promotion of
electrons from valence to conduction band (a hole being generated simultaneously in the valence band).
Two important characteristics of a photodetector are its quantum efficiency and response speed.
These parameters depend on the material band gap, the operating wavelength, the doping and thickness of
the p, i and n regions of the device. The quantum efficiency is the number of electron-hole carrier pairs
generated per incident photon of energy h and is given by
= (number of electron-hole pairs generated)/(number of incident photons)
= (i/e)/(Po/h)
where I is the average photocurrent generated by a steady-state average optical power Po incident on the
photodetector. In a practical photodiode, 100 photons will create between 30 and 95 electron-hole pairs,
thus giving a detector a quantum efficiency ranging from 30 to 95 percent.
The performance of a photodetector is often characterized by the responsivity, . This is related to
the quantum efficiency by
= i/Po = e/h
This parameter indicates the photocurrent generated per unit optical power. The equation may be also
written as
I = ePo/h
indicating that the detected current is directly proportional to the optic power.
PD Module
The photodetector module circuit is shown below. The circuit needs to have a resistance R
connected externally to complete it.

In addition to the module, we will also need the following:

1. OFT power supply
Procedure:
The VI and PI characteristics of a photodiode are plotted in both forward and reverse bias.
1. Connect the OFT power supply to the module.
2. Set the bias switch to the forward bias configuration.
3. Turn the bias voltage varying pot in the module to its minimum position and turn ON the
module.
4. Externally connect a 10K resistor as R.
5. Adjust the pot and fix the bias voltage at 10V.
1. Set power source in CW mode and turn it ON.
2. Connect power source to power meter and set power to minimum level. Record this power
(Po).
3. Connect the source, without changing its power setting or turning it off, to the PD module
using an optical fiber. Measure the voltage V across R.
4. Vary the source power from minimum to maximum in steps of convenient size. For each
value of input power, note the value of V.

5. Current through the photodetector is given by I = V/R = V/(10*103).

6. Plot the various values of current output I against input power Po. This gives the PI
characteristics.
7. Now, fix the input power at, say, -20dBm.
8. Vary the bias voltage from 2V to maximum, in steps of convenient size. For each value of
bias voltage, measure the corresponding V, and hence output current as I = V/R =
V/(10*103). Also measure the corresponding VPD, ie the voltage across the photodiode.
9. Plot the various values of output current against the corresponding values of VPD.
10. To obtain the reverse bias characteristics, set the bias switch to reverse bias and repeat steps 3
to 14.
11. In reverse bias, the responsivity can be calculated as = i/Po = (V/RPo). Responsivity is
calibrated in A/W or mA/mW.
12. The quantum efficiency can be calculated from the responsivity as
= (h/e)*100%
where h = 6.64*10-34 Js
e = 1.6*10-19 C
= c/ = (3*108)/(850*10-9) Hz

Observations:
Forward bias VI characteristics:
V1 (V) VPD (V) I (mA)

0.2 0.03 0.020
0.3 0.04 0.030
0.6 0.045 0.060
1.83 0.48 0.183
2 0.5 0.200
2.3 0.52 0.230
3 0.54 0.300
3.5 0.55 0.350
4.64 0.56 0.464
6.53 0.58 0.653
9.51 0.6 0.951

0.8
Current (mA)
0.6
0.4
I (mA)
0.2
0
0 0.2 0.4 0.6 0.8
Voltage (V)
Forward bias PI characteristics:
V1 (V) Power (dBm) Power (W) I (mA)

9.49 -20 10.00 0.949
9.49 -20.8 8.32 0.949
9.49 -19 12.59 0.949
9.49 -17.5 17.78 0.949
9.49 -16.5 22.39 0.949
9.49 -15.5 28.18 0.949
9.49 -14.5 35.48 0.949
9.49 -14 39.81 0.949
9.49 -13.5 44.67 0.949
9.49 -13 50.12 0.949
9.49 -12 63.10 0.949
9.49 -11.7 67.61 0.949

0.8
Current (mA)
0.6
0.4
I (mA)
0.2
0
0 20 40 60 80
Power (W)
Reverse bias VI characteristics:

V1 (V) VPD (V) I (mA)
0.05 1.05 0.005
0.05 2.05 0.005
0.05 3.05 0.005
0.05 4 0.005
0.05 5 0.005
0.05 6 0.005
0.05 7 0.005
0.05 8 0.005
0.05 9 0.005
0.05 10 0.005
0.05 11 0.005
0.006
0.005
Current (mA)
0.004
0.003
0.002 I (mA)
0.001
0
0 5 10 15
Voltage (V)

Reverse bias PI characteristics:

V1 (V) I (mA) Power (dBm) Power (W)
0.009 0.001 -21.9 6.46
0.02 0.002 -20.5 8.91
0.03 0.003 -19 12.59
0.05 0.005 -17.5 17.78
0.07 0.007 -16.5 22.39
0.08 0.008 -15.5 28.18
0.11 0.011 -14.5 35.48
0.12 0.012 -14 39.81
0.14 0.014 -13 50.12
0.19 0.019 -12 63.10
0.25 0.025 -11 79.43
0.03
0.025
0.02
Current (mA)
0.015
0.01 I (mA)
0.005
0
0 20 40 60 80 100
Power (W)

EXPERIMENT NO: 4
Numerical Aperture Measurement
Aim:
To measure the numerical aperture of an optical fibre.
Theory
The numerical aperture (NA) of a fiber is a measure of its light capturing ability. It may be
defined as the sine of the largest angle contained within the cone of acceptance.
Numerically, NA = (n12-n22) where n1 is the refractive index of the core, and n2 of the
cladding. It is a measure of the ability of the fiber to gather light at the input end. Because it is a measure
of the contrast in refractive index between the core and the cladding it is a good measure of the light
guiding properties of the fiber. The higher the NA, the tighter can we have bends in the fiber before loss
of light becomes a problem.
A low NA indicates a small acceptance angle. Because of this, coupling to a low-NA fiber is
more difficult (mechanical alignment is more sensitive) and less efficient ( some of the rays are outside
the acceptance angle) than coupling to a high-NA fiber. Typically, fibers for long path lengths are
designed to have numerical apertures from about 0.1 to 0.3. The low NA does make coupling efficiency
tend to be poor, but improves the fibers bandwidth.
From the NA we can calculate the V-number, known otherwise as the normalized frequency or
the dimensionless fiber parameter.
V = *d* NA/
where d is core diameter. If V 2.405 the fiber will be single-mode at the wavelength used. To calculate
V.
Another related parameter is the fractional refractive index or index difference, .
For step-index fibers, = (n1-n2)/n1.
For graded index fibers, = (n12-n22)/2n12 (n1-n2)/n1.

In terms of NA, = NA2/2n12

Measuring Numerical Aperture:
In order to measure NA, we take the fiber of interest and connect it to an optical source of visible
wavelength. At the other end of the fiber, light will come out. We let it fall on a flat surface. From the
normal distance h between the end of fiber and flat surface, and the radius r of the illuminated disk
formed on the flat surface by the light, we may calculate NA as depicted below:

bservations:

() () = =
+
1.25 2.2 0.494 29.60 59.21
0.95 1.6 0.51 30.70 61.40
5 9 0.486 29.05 58.11
0.497 28.79 59.57
Inference:
Numerical aperture of the given fibre =0.497 (typical value = 0.5)
Acceptance = 2 = 59.57 (typical value: within the range 55 60 degrees)

EXPERIMENT NO: 5
VI characteristics of LD
Aim:
To plot the VI characteristics of Laser Diode
Theory:
A laser diode is a laser whose active medium is a semiconductor similar to that found in a light-
emitting diode. The most common type of laser diode is formed from a p-n junction and powered by
injected electric current. The former devices are sometimes referred to as injection laser diodes to
distinguish them from optically pumped laser diodes.
In optics, stimulated emission is the process by which an atomic electron (or an excited molecular
state) interacting with an electromagnetic wave of a certain frequency may drop to a lower energy level,
transferring its energy to that field. This is in contrast to spontaneous emission which occurs without
regard to the ambient electromagnetic field. However the process is identical in form to atomic absorption
in which the energy of an absorbed photon causes an identical but opposite atomic transition: from the
lower level to a higher energy level. In normal media at thermal equilibrium, absorption exceeds
stimulated emission because there are more electrons in the lower energy states than in the higher energy
states. However when a population inversion is present the rate of stimulated emission exceeds that of
absorption, and a net optical amplification can be achieved. Such a gain medium, along with an optical
resonator, is at the heart of a laser. Lacking a feedback mechanism, laser amplifiers and superluminescent
sources also function on the basis of stimulated emission.
Equipments:
1. LD Module
2. OFT power supply
5. Optic Fiber
The LD module has LD connected in a circuit as shown below.

Procedure:
ON the device.
2. Couple the light output towards one end of the fiber by adjusting the rail with XY positioner.
3. Connect the other end of the fiber to the power meter.
1. ILD=V1/68
5. Measure the voltage VLD across the LD
8. Plot VLD v/s ILD

Observations:
V1 (V) VLD (V) I (mA)
0.4 2.16 5.88

0.6 2.33 8.82
0.75 2.45 11.03
0.9 2.57 13.24
1.05 2.69 15.44
1.1 2.73 16.18
1.15 2.77 16.91
1.2 2.81 17.65
1.25 2.85 18.38
1.3 2.89 19.12
1.35 2.93 19.85
1.4 2.96 20.59
1.45 3 21.32
1.5 3.04 22.06
1.55 3.08 22.79
1.6 3.12 23.53
1.65 3.15 24.26
1.7 3.19 25.00
1.77 3.24 26.03

30
25
20
Current (mA)
15
I (mA)
10
0
0 1 2 3 4
Voltage (V)

EXPERIMENT NO: 6
PI characteristics of LD
Aim:
To plot the PI characteristics of Laser Diode
Theory:
A laser diode is a laser whose active medium is a semiconductor similar to that found in a light-
emitting diode. The most common type of laser diode is formed from a p-n junction and powered by
injected electric current. The former devices are sometimes referred to as injection laser diodes to
distinguish them from optically pumped laser diodes.
In optics, stimulated emission is the process by which an atomic electron (or an excited molecular
state) interacting with an electromagnetic wave of a certain frequency may drop to a lower energy level,
transferring its energy to that field. This is in contrast to spontaneous emission which occurs without
regard to the ambient electromagnetic field. However the process is identical in form to atomic absorption
in which the energy of an absorbed photon causes an identical but opposite atomic transition: from the
lower level to a higher energy level. In normal media at thermal equilibrium, absorption exceeds
stimulated emission because there are more electrons in the lower energy states than in the higher energy
states. However when a population inversion is present the rate of stimulated emission exceeds that of
absorption, and a net optical amplification can be achieved. Such a gain medium, along with an optical
resonator, is at the heart of a laser. Lacking a feedback mechanism, laser amplifiers and superluminescent
sources also function on the basis of stimulated emission.
Equipments:
1. LD Module
2. OFT power supply
5. Optic Fiber
The LD module has LD connected in a circuit as shown below.

Procedure:
The VI and PI characteristics of a photodiode are plotted in both forward and reverse bias.
1. Connect the OFT power supply to the module.
2. Set the bias switch to the reverse bias configuration.
3. Turn the bias voltage varying pot in the module to its minimum position and turn ON the module.
4. Externally connect a 10K resistor as R.
5. Adjust the pot and fix the bias voltage at a known voltage.
6. Set power source in CW mode and turn it ON.
7. Connect power source to power meter and set power to minimum level. Record this power (Po).
8. Connect the source, without changing its power setting or turning it off, to the PD module using
an optical fiber. Measure the voltage V across R.
9. Vary the source power from minimum to maximum in steps of convenient size. For each value of
input power, note the value of V.
10. Current through the photodetector is given by I = V/R = V/(10*103).
11. Plot the various values of current output I against input power Po. This gives the PI
characteristics.
12. Now, fix the input power at, say, -20dBm.
13. Vary the bias voltage from 2V to maximum, in steps of convenient size. For each value of bias
voltage, measure the corresponding V, and hence output current as I = V/R = V/(10*103). Also
measure the corresponding VPD, ie the voltage across the photodiode.
14. Plot the various values of output current against the corresponding values of VPD.
15. To obtain the zero bias characteristics, set the bias switch to zero bias and repeat steps 3 to 14.

16. In reverse bias, the responsivity can be calculated as = i/Po = (V/RPo). Responsivity is
calibrated in A/W or mA/mW.
17. The quantum efficiency can be calculated from the responsivity as
1. = (h/e)*100%
ii. where h = 6.64*10-34 Js
1. e = 1.6*10-19 C
2. = c/ = (3*108)/(850*10-9) Hz
18. NOTE: Since the power meter displays power in dBm, it needs to be converted to Watts or
similar units before plotting. Since 1mW= 0dBm, 10mW= 10 dBm and so on, 10P(in dBm)/10
will give the power in mW.
19. P(dBm)= 10 log (P in mW)

a. = 10 log (P in W) + 30
b. = P(in dB) + 30
Observations:
V1 (V) VLD (V) I (mA) Power Power

(dBm) (W)
0.4 2.16 5.88 -60 0.001
0.6 2.33 8.82 -59.5 0.001
0.75 2.45 11.03 -58.8 0.001
0.9 2.57 13.24 -58.2 0.002
1.05 2.69 15.44 -57.5 0.002
1.1 2.73 16.18 -57.3 0.002

V1 (V) VLD (V) I (mA) Power Power

(dBm) (W)
1.15 2.77 16.91 -56.9 0.002
1.2 2.81 17.65 -56.8 0.002
1.25 2.85 18.38 -56.5 0.002
1.3 2.89 19.12 -56.4 0.002
1.35 2.93 19.85 -55.9 0.003
1.4 2.96 20.59 -55.6 0.003
1.45 3 21.32 -54.9 0.003
1.5 3.04 22.06 -54.3 0.004
1.55 3.08 22.79 -53 0.005
1.6 3.12 23.53 -50.7 0.009
1.65 3.15 24.26 -46.7 0.021
1.7 3.19 25.00 -42.7 0.054
1.77 3.24 26.03 -38.7 0.135
0.160
0.140
0.120
Power (W)
0.100
0.080
0.060 Power (W)
0.040
0.020
0.000
0.00 5.00 10.00 15.00 20.00 25.00 30.00
Current (mA)

EXPERIMENT NO: 7
VI & PI characteristics of APD
Aim:
To plot the VI & PI characteristics of Avalanche Photodiode
Theory:
Avalanche photodiode, popularly known as APD, is a photo-detector that allows internal
multiplication to take place and hence an amplified current flows through it when its reverse bias is
increased beyond certain point. APD operated under low voltage conditions.
When light enters the photodiode electron-hole pairs will be generated, if the applied light energy
is greater than the band gap energy of the photodiode, when it is reverse biased. The movement of the
electron hole pairs generates electric current in a photodiode. If the reverse bias voltage is increased,
ionization of the carriers takes place thereby more number of electron-hole pairs will be generated. These
newly created electron-hole pairs in turn undergo ionization and hence produce additional electron-hole
pairs and this continues like a chain reaction. This process of electron-hole pair generation is generally
referred as avalanche multiplication and this is the principle involved in the APD. This avalanche
multiplication in APD is a function of reverse bias voltage.
Light energy and the wavelength have a relationship as shown below.
= 1240(nm)/E
where E is the band gap energy of the Si photo-detector. The band gap energy for Si is 1.12V at room
temperature and hence Si photo-detectors are sensitive to light wavelength shorter than 1100nm.
Equipments:
1. APD Module
2. OFT power supply
5. Optic Power Source
6. Optic Fiber

Procedure:
ON the device.
2. Couple the light output towards one end of the fiber by adjusting the rail with XY positioner.
3. Connect the other end of the fiber to the power meter.
ILD=V1/68
5. Measure the power PLD from the power meter.
8. Plot PLD v/s ILD
The APD module has APD connected in a circuit as shown below.
Observations:
Zero bias PI characteristics (V=142V):

Power VR (V) Power (W) I (mA)

(dBm)
-35 0.15 0.32 0.015
-30 0.25 1.00 0.025
-25 0.35 3.16 0.035
-23 0.38 5.01 0.038
-20 0.42 10.00 0.042
-19 0.42 12.59 0.042
-18 0.42 15.85 0.042
0.045
0.04
0.035
Current (mA)
0.03
0.025
0.02
0.015 I (mA)
0.01
0.005
0
0.00 5.00 10.00 15.00 20.00
Power (W)
Reverse bias VI characteristics (P=16dBm):
Vbias (V) VR (V) I (mA)

0 0 0.00
10.55 0.5 0.05
25 1 0.10
50 2 0.20
75 4 0.40
100 6 0.60
120 10 1.00
142 25 2.50

3.00
2.50
Current (mA)
2.00
1.50
1.00 I (mA)
0.50
0.00
0 50 100 150
Voltage (V)
Reverse bias VI characteristics:

Power VR (V) Power I (mA)
(dBm) (W)
-25 0.0052 3.16 0.52
-23 0.008 5.01 0.80
-21 0.01 7.94 1.00
-20 0.011 10.00 1.10
-19 0.012 12.59 1.20
-17 0.013 19.95 1.30
-16.9 0.0131 20.42 1.31
1.40
1.20
1.00
Current (mA)
0.80
0.60
I (mA)
0.40
0.20
0.00
0.00 5.00 10.00 15.00 20.00 25.00
Power (W)

EXPERIMENT NO: 8
Preparation of a Splice joint and measurement of the splice loss.
Aim:
To measure the splice loss after splicing.
Theory:
Splicing is the process by which two optical fibers are joined. It is necessary for joining cables
together permanently to achieve required lengths, as well as to repair accidental breakages in cables.
There are 3 types of splicing processes. They are
1. Ultra-violet (UV) curable Epoxy Splice
2. Mechanical splice
3. Fusion splice
Fusion splicing is normally used as it produces extremely reliable and low loss permanent connections.
UV splicing and mechanical splicing methods are also widely used. Though the insertion losses are
significantly higher than that for fusion splicing, they are inexpensive, quick, easy to use and very
portable.
Ultra-violet (UV) curable Epoxy Splice
Equipments:
1. A Precision Micrometer Mechanical Stripper for stripping off the tight buffer of the glass fiber.
2. A Scribe for cutting the glass fiber.
3. A stripper and a pair of scissors for preparation of fiber.
4. Capillary tubes and protective sleeves for aligning two fiber ends which are to be spliced.
5. Core-matching, UV curable bond (epoxy acrylate) to ensure low loss of light.
6. Alignment plate for convenient placement and aligning of the fibers.
7. UV lamp for curing the epoxy.
Procedure:
1. Prepare the ends on the fibers to be spliced as per the lengths as shown below.

2. Place a drop of UV curable epoxy over the capillary. The UV epoxy has high viscosity and hence
it does not flow inside the capillary. So, gently insert the prepared glass fiber into the capillary
and slowly push it in and pull it out like a piston so that the epoxy in the form of pellet goes into
the centre of the capillary guide tube.
3. Repeat the above steps for the other end of the capillary tube. Gently insert one end of the fiber
such that the fiber tip is visible at the center of the glass capillary guide tube.
4. Insert the protective glass sleeve over this end carefully place the whole setup on the aligning
plate and tape the fiber firmly so that they dont move and damage the setup.
5. Take the other bare prepared end of the fiber which is to be spliced. Gently insert it into the other
end of the capillary tube, so as to align with and butt the cleaved end face of the other fiber
visible in the capillary guide tube. Tape this fiber also firmly on the plate so that the whole setup
doesnt get disturbed.
6. Apply the UV curable epoxy over the joints of the protective glass sleeve and the fiber which
enhances the firmness of the splice.
7. Now put on the UV lamp so that the UV rays fall on the splice setup. Leave this setup
undisturbed for about 10 minutes for the epoxy to get cured. Now the two fibers are joined
together with matched UV bond.
Mechanical splice method
Equipments:
1. A glass capillary which ensures proper butt joint

2. Two locking nuts
3. Two collates on both sides of the capillary

Procedure:
1. Take the fiber that is to be spliced and prepare the end as per the lengths as shown below.
2. Take the mechanical splice, and slightly unscrew the locking nuts on either side, taking care that
they dont come out of the assembly.
3. Gently insert one end of the prepared fiber onto the collet such that the fiber tip is visible in the
glass capillary guide tube. Gently screw in the locking-nut to lock and secure the inserted cable.
4. Take the other glass fiber and similarly prepare its end which is to be spliced. Gently insert it into
the other end of the mechanical splice, so as to align with and butt the cleaved end face of the
other visible in the glass capillary guide. Now, gently lock the locking-nut to secure the fiber.
Now the two fibers are spliced mechanically.
Splice loss measurement:

Equipments:
1. Optical power source.

2. Optical power meter.
3. Two fibers having same length, one without a splice joint and second with a splice joint.
Procedure:
1. Setup the experiment as shown below.

2. Set the light source to take a convenient reading P1 dBm in power meter by using the first fiber.
3. Repeat the same using the second fiber. Let the reading be P2 dBm.
4. Then the insertion loss of the splice in dBm is given by
Ls = P1 P2
Observations:
Power without splice joint (P1) = -52dBm
Power with splice joint (P2) = -66.5dBm
Splice loss, Ls = P1 P2 = 14.5dBm

EXPERIMENT NO: 9
Measurement of fiber damage by Optical Time Domain Reflectometer
(OTDR) technique
Aim:
To measure the distance of the break points in a fiber optic communication system.
Theory:
Optical Time Domain Reflectometer (OTDR) is an essential instrument that can give a complete
picture of the events in a fully deployed fiber. They normally display a distance vs power curve that will
show how the power is varying at various events. They also calculate and give various figures like
attenuation of the fiber, losses at each event and distance between the events. The principle of operation
of OTDR is that they send a pulse through the fiber setup under test and look at the
a) Reflections that come back from the reflective events
b) Backscattered light by the fiber itself
The time difference between the launched pulse and the reflected pulse gives the measure of the distance
while the backscattered light gives the measure of the fiber attenuation assuming the refractive index of
the fiber and the wavelength of the light launched is known.
The basic building blocks of an OTDR are:
a) A light source that is capable of launching high power at high speed to get the narrow pulse width
possible. This is usually a laser diode.
b) A detector that detects even the very small power of the reflected pulses from reflective events
and backscatters light from the fiber. This is usually an APD.
c) A processing block (usually a processor) to process the data obtained from the reflections and the
backscattering and to display as a processed curve and to give the measurements.

Equipments:
a) A laser diode source with a high speed modulator and a PC based pulse generator.
b) An APD detector.
c) A coupler module.
d) An oscilloscope.
e) A few fiber events to use with it.
The laser source is a high speed, medium power laser diode operating at around 650nm. The pulse
generator generates pulses having various widths. High speed modulator modulates the laser source while
keeping the power at check always constant for smooth running of the LD. The coupler module is a
directional coupler of 1 x 2 type resembling a Y with bidirectional mode of operation. It branches the
light that is returning back from the fiber and the events. APD module detects the backscattered light and
shows on an oscilloscope.
Procedure:
1. Set up the experiment as shown above.

2. Switch ON the source and the APD receiver.
3. Generate the pulse from the pulse generator. Choose the smallest pulse width so that smaller
length events can be well within the detectable region.
4. Adjust the collimating lens of the laser source such that a very fine spot may be focused on to the
fiber tip.

5. Observe the pulse in one channel of the oscilloscope and the APD output on the other channel of
the oscilloscope.
6. Measure the time difference between the pulses for calculating the distance of the break points.
Distance between the events (distance between break points) can be calculated as follows:
Refractive index of fiber (core) = speed of light in vacuum / speed of light in fiber.
Distance between events = time taken to reach the distance * speed of light in fiber
= (time noted in oscilloscope / 2) * speed of light in vacuum / refractive
index
Refractive index of the given fiber is 1.47
Observations:
Time (s) Distance between events Actual distance

1.38 140.82 140
1.96 200.00 200
1.56 159.18 160

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Department of Electronics and Communication Engineering

MAR BASELIOS COLLEGE OF ENGINEERING AND TECHNOLOGY

BETHANY HILLS, NALANCHIRA, TRIVANDRUM-695015

FACULTY LAB MANUAL

13.707 MICROWAVE & OPTICAL COMMUNICATION LAB

Version Date Prepared by Approved by Remarks

Dept. of ECE, MBCET 2

Vision of the Institute

To be an Institution moulding globally competent Professionals as epitomes of Noble Values.

Mission of the Institute

Vision of the Department

To be a Centre of Excellence in Electronics and Communication Engineering Education and Research

Mission of the Department

Dept. of ECE, MBCET 3

DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING

Dept. of ECE, MBCET 4

Dept. of ECE, MBCET 5

08.508 MICROWAVE & OPTICAL COMMUNICATION LAB (T) 0-0-4

Part A: Microwave Experiments:

1. GUNN diode characteristics.

Part B: Optical Experiments:

1. Measurement of Numerical Aperture of a fiber, after preparing the fiber ends.

Dept. of ECE, MBCET 6

PART A: MICROWAVE EXPERIMENTS

Dept. of ECE, MBCET 7

Course Outcomes: Program Outcomes

After the completion of the course, the student will be a b c d e f g h i j k l m

1 Determine the unknown impedance of the X X X X X X

2 Understand all basic Microwave devices and X X X X X

3 Sketch the radiation pattern of given antenna using X X X X X X

4 Identify the dielectric material by measuring the X X X X

5 Learn few microwave measurements and analyze X X X X X

Dept. of ECE, MBCET 8

3 Reflex Klystron Mode Characteristics

4 VSWR and Frequency measurement

7 Directional Coupler Characteristics

Unknown load impedance measurement using smith chart and

Dept. of ECE, MBCET 9

Dept. of ECE, MBCET 10

FAMILIARIZATION OF MICROWAVE COMPONENTS AND DEVICES

Aim: - To familiarize various microwave devices and components

Waveguide detector mount (tunable)

Dept. of ECE, MBCET 11

Multihole directional couplers

Dept. of ECE, MBCET 12

Dept. of ECE, MBCET 13

Dept. of ECE, MBCET 14

Pyramidal waveguide horn antenna

Dept. of ECE, MBCET 15

Gunn power supply

Dept. of ECE, MBCET 16

Klystron power supply

Dept. of ECE, MBCET 17

Waveguide type: WR- 90

Dept. of ECE, MBCET 18

Dept. of ECE, MBCET 19

AIM: To plot Voltage-Current characteristics of Gunn diode.

i) Set the variable attenuator for minimum attenuation

Dept. of ECE, MBCET 20

Dept. of ECE, MBCET 21

V-I characteristics of Gunn diode

1. What are negative resistance devices?

Dept. of ECE, MBCET 22