Design of Analog CMOS Circuits

Using Gm/IDBased Methods

EEE 523 - Advanced Analog Integrated Circuits
Erik Mentze
01.27.12
 References
1. F. Silveria et al. A gm/Id based methodology for the design of CMOS analog circuits and its
application to the synthesis of a silicon-on-insulator micropower OTA, IEEE Journal of Solid-
State Circuits, Sep. 1996, pp 1314-1319.
2. D. Foty, M. Bucher, D. Binkley, Re-interpreting the MOS transistor via the inversion
coefficient and the continuum of gms/Id, Proc. Int. Conf. on Electronics, Circuits and
Systems, pp. 1179-1182, Sep 2002.
3. B.E. Boser, Analog Circuit Design with Submicron Transistors, IEEE SSCS Meeting, Santa
Clara Valley, May 19, 2005, http://www.ewh.ieee.org/r6/scv/ssc/May1905.pdf.
4. H.D. Dammak, et al. Design of Folded Cascoe OTA in Different Regions of Operation through
gm/ID Methodology, World Academy of Science, Engineering, and Technology, 45, 2008.
5. P. Jespers, The gm/Id Methodology, a sizing tool for low-voltage analog CMOS Circuits,
Springer, 2010.
6. T. Konishi, et al, Design Optimization of High-Speed and Low-Power Operational
Transconductance Amplifier Using gm/ID Lookup Table Methodology, IEICE Trans. Electron.,
Vol.E94-C, NO.3 March 2011.
7. B. Murmann, MOS Transistor Modeling Gm/ID-based Design, EE214 Course Reader,
Stanford University, Stanford CA, 2011.
 The Model Problem

Square Law SPICE

Nothing Gm/ID EKV Reality

 Square Law Equations
Saturation

design term operating point information

1 2
= 1 + ()
2

process constants

Triode

design term operating point information

2
=
2
process constant
 uCox (KP) Simulation

Dependence on: overdrive voltage, gate length, etc.

 SPICE Model

Found One!

Process constants handled by curve fitting

BSIM 3v3 uses 110 parameters!
 The Model Problem
Square Law SPICE

Nothing gm/ID EKV Reality

The purpose of any model: To give you the right answer!

Square Law Model: SPICE Model:

Useful for hand calculations Useful for computer simulation
Oversimplifies process constants Curve Fitting for process constants
20%-80% Error Excellent accuracy (if done properly)

Gm/ID Model:
Useful for hand calculations
<10% Error
Two approaches to process constants
 Handling Process Constants
Analytical
Takes device physics into account, typically using the EKV
model
Derived expressions from physical device parameters

Experimental
Lookup table approach, storing device characteristics
generated by SPICE simulation or measurement results
The gm/ID lookup table methodology enables an
analytical design optimization by overwhelming the
inaccuracy observed in the square-law MOS transistor
model
 gm/ID-Based Design
Set of normalized figures of merit to describe FET transistors
Transconductance Efficiency
FET Operating Point
Want large gm for as little current as possible

Current Density
How wide does the device need to be?
Transit Frequency
Want large gm, with as little Cgg as possible
Intrinsic Gain
Want large gm, with large ro (small go)
 What is gm/ID?
A way of representing the FET operating point
Overdrive voltage ( = ) is only valid in strong inversion
can represent an equivalent bias condition for strong,
moderate, and weak inversion, with smooth transitions between
each.

A design parameter that couples small signal transconductance and large

signal bias current.
How much bias current do I need to achieve a required amount of
transconductance?

A measure of efficiency to generate gm from a given ID

Large gm/ID value implies larger transconductance for a constant
current

Similar to normalized BJT transconductance:

=


 Extracting Device Characteristics
1. Vds set to Vpwr

2. Sweep Vgs: 0 to Vpwr

3. Measure required parameters:

- gm, Id, ro, Cgg

4. Repeat for various lengths

(fixed W)

Notes:
To a first order, the measurement is independent of Vds
Body effects are neglected

and thus measurements are independent of W

Weak Inversion
subthreshold

Moderate Inversion

Strong Inversion

Favors DC Gain Favors BW



Strong Inversion Weak Inversion

=

 1
=
2

Strong Inversion Weak Inversion

 Lookup Table Functions
Can I avoid using a ruler on a printed out chart?
YES! By using a scripting language such as MATLAB,
Python, etc
Based on extracted data from SPICE simulations:
lookup.ft(fet, length, gm/id)
lookup.gmro(fet, length, gm/id)
lookup.idw(fet, length, gm/id)
lookup.gmid(fet, length, fom, fom_value)
lookup.length(fet, gmid, fom, fom_value)
Useful for:
Quick lookup while doing hand calculations
Design optimization scripts
 Comparison to Square Law Equations
2
2
= = =

1 2

2

3
= = 2
2 2
3

1 2
= =
1 2

2
Comparison to Square Law Equations

2
=

Square law equations breakdown at Vov ~200mV

Comparison to Square Law Equations

Good estimate of Vdsat: voltage required to extract gain

 Gm/ID-Based Design
Replaces a set of equations to solve with a set of
figures of merit to balance

Complex process parameters are overwhelmed

with lookup charts (or lookup table functions)

Accurately models operation over weak,

moderate, and strong inversion

Avoids over-dependence on SPICE simulations

 Sample Design Flow
1. From a given specification, determine the required gm

2. Choose a bias current based on required gm and desired

gm/ID operating point.

3. Lookup transistor W from gm/ID vs. ID/W chart.

(L is typically chosen based on technology or gain requirements)
Simple Example
Specs and Objectives:

tsmc18 process (3V)

RL=1k, CL=50fF, Ri=10k

DC Gain = -4 v/v
Estimate pole locations
 Simple Design Flow
1. From the given specification, determine the required gm

2. Choose a bias current based on required gm and desired

gm/ID operating point.

3. Lookup transistor W from gm/ID vs. ID/W chart.

(L is typically chosen based on technology and over gain requirements)
Small Signal Model
 Simple Design Flow
1. From the given specification, determine the required gm

2. Choose a bias current based on required gm and desired

gm/ID operating point.

3. Lookup transistor W from gm/ID vs. ID/W chart.

(L is typically chosen based on technology and over gain requirements)
 Small Signal Model

4
= 10 = = 0.4
10
 Simple Design Flow
1. From the given specification, determine the required gm

2. Choose a bias current based on required gm and desired

gm/ID operating point.

3. Lookup transistor W from gm/ID vs. ID/W chart.

(L is typically chosen based on technology and over gain requirements)
Id/W=7.33
 Simple Example
400
= 7.33 = = = 54.57
7.33 7.33
= 350

Test Circuit
Simulation Results
Parameter Hand Sim % error
Calc
Av(DC) 4.0 V/V 3.953 V/V 1%

gm 4 mS 4.089 mS 2.2%

gm/ID 10.0 S/A 10.15 S/A 1.5%

Simple Example Estimate BW

1+
+ +


1+
+

1
1 =
2
+
= ?
Normalized Capacitance

Factors for approximating:

=

Simple Example Estimate BW

1+
+ +


1+
+

1
1 =
2
+

=

ft = 7.01GHz
 Simple Example Estimate BW

1+

+ +

1+

+

= = 260 = 41.3

1
1 = = 90.8
= 656.17 2

+

= 104.4 = = 0.17 90.8 = 15.4

Simulation Results
Summary of Normalized Design
Parameters
Primary Design Secondary Design
Parameters Parameters












 Gm/ID-Based Design
Replaces a set of equations to solve with a set of
figures of merit to balance

Complex process parameters are overwhelmed

with lookup charts (or lookup table functions)

Accurately models operation over weak,

moderate, and strong inversion

Avoids over-dependence on SPICE simulations

 OTA Simulation / Optimization
1:K
M3 M31 M41 M4 = 4 ||5

() =
Vm M1 M2 Vp
()
CL =
2
1
3 =
1:K 2 4 ||5
M51 M5

Design Choices:
K and gm set DC gain
K and gm set unity gain frequency

So which should I use? K or gm? Why not try both

 gm/ID simulation results
Cload = 5pF
fun = 10MHz
AV(DC) = 1000 V/V

total current (mA)

tail current (mA)

gm/ID
 Limitations
Lookup tables extracted from SPICE simulations
Only as accurate as the SPICE curve fitting

Process and temperature corner cases

Body Effects
Cascode architecture

Drain-Source voltage variation

 Appendix
Simple Current Mirror
Cascode Current Mirror
Current Mirror Design Example
Design goals:
1. Good DC current matching
small gm/ID (strong inv)

2. Reasonable headroom
2
()

large gm/ID (weak inv)

3. High Output Resistance

small gm/ID (strong inv)
 Design Option 1: gm/ID = 5
choose = 1
lookup 25
=5 = 10.8 = = = 2.3
10.8 10.8

= 328

125
2
() = 0.4 2.6


 Design Option 2: gm/ID = 10
choose = 1
25
= 10 lookup = 1.98 = = = 12.5
1.98 1.98

= 413

250
2 = 1.65
() = 0.2


Cascode Current Mirror Example

1 1 2

Optimize separately
High gm/Id for gain
gmro Low gm/Id for matching

matching
 Design Cascode Current Source
choose = 1
lookup 25
=5 = 10.8 = = = 2.3
10.8 10.8
25
= 10 lookup = 1.98 = = = 12.5
1.98 1.98

2 2 = 413

1 2.6
0.2 + 0.4 = 0.6
1
1.2% = 0.6