The 1974 RCA Triac SCR and Diacs Data Book

Thyristors, Rectifiers
and Diacs
Selection Guide
Data STOCKED AND SOLD BY
Application Notes
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Thyristors, Rectifiers,and Diacs
This DATABOOK contains complete data and related appli-

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The new RCA type-numbering system for these devices is
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New RCA Type-Numbering System . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 6
Index to Thyristors, Rectifiers, and Diacs 8
Cross-Reference of Old to New Type Numbers 11
Index to Application Notes 13
Triac Product Matrix 14
SCR Product Matrix 18
Rectifier Product Matrix 22
Application Information 25
Technical Data:
Triacs 27
Silicon Controlled Rectifiers (SCR's) 137
Rectifiers 251
Diacs 349
Application Notes 353
Guide to RCA Solid State Devices:
Developmental-to-Commercial-Number Cross-Reference Index 504
Military (JAN and JAN-TX) Types 510
Subject Index 511
Index to Devices 526
A new system of type numbers has been adopted for all RCA triacs, SCR's, rectifiers, and diacs previously identified by
100-,40000-,41000-,43000-,44000-, and 45000-series numbers. Type numbers for JEDEC (IN- and 2N-series) devices,
which are registered with the Joint Electron Devices Engineering Council of the Electronic Industries Association (EIA), are
not affected.
The new type numbers for non-JEDEC RCA thyristors, rectifiers, and diacs consist of an alpha-numeric code that
immediately identifies the basic type of device and provides information on significant device features. The basic product
type is indicated by the initial letter of the type-number designation; i.e., T = triac, S = SCR, and 0 = rectifier or diac. The
numbers following the initial letter indicate device current ratings, type of package, and electrical variants within a series.
The suffix letter(s) define the voltage rating of the device.
Sixteen suffix letters are used to represent specific voltage ratings in the range from 15 to 1000 volts. Combinations of these
letters can be used to indicate voltage ratings that differ from the sixteen basic values. (For example, the suffix OF is used
for a voltage rating of 450 volts; i.e., 0 + F = 400 + 50 = 450 volts.)
The charts and matrix shown below provide a detailed explanation of the new type number codes. For convenience of type
selection, the "old" numbers are included in the index to devices on pages 8-10, and a cross-reference guide that relates
"old" type numbers to the new numbers that replace them is provided on pages 11-12.
~
I
Graphic Representation of Rectifier and
Diac Numbering System
Indicates
Rectifier
or Diac
QJJ~J,0,
Indicates
Package
1 = 00-1
2 = 00-15
Indicates
Average
Current
Rating 10
Voltage
Designation
Q = 15 V
U = 25 V
Graphic Representation of Thyristor
Numbering System
qJ .c~J,0,
Indicates
Type
T = Triac
S = SCR
Indicates
Broad Generic
Classification
on basis of
~
Identifies
Package
Variants
Id~esl
Electrical
Variants
Indicates Type 3 = TO-l (00 indicates Y = 30 V IT( RMS) Rating Voltage

1 = Standard 4 = 00-4 'a < 1 A) F = 50 V
A = 100 V __ 1_- Designation
2 ~ Fast 5 = 00-5 (as shown
Recovery 6 = 00-26 G = 150 V IT(RMS) Standard Fast-Turnoff at left)
3 ~ Diac 7 = 00-26 Insulated B ~ 200 V Ratings (A) Devices Devices
H = 250 V
0-2.5 00 - 09 10 - 19
C = 300 V
2.5 - 8 20 - 29 30 - 39
0= 400 V
8 - 15 40 - 49 50 - 59
E = 500 V
15 - 40 60 - 69 70 - 79
M ~ 600 V
>40 80 - 89 90 - 99
S = 700 V
N = 800 V
(NOTE: The first five digits, e.g., T2300, provide the
T = 900 V
basic device series designation_)
P = 1000 V
PA=1100V
P8 = 1200 V
Thyristor Numbering Matrix

TRIACS
Generic Class Package Variants Electrical Variants
T23 : 2.5A sensitive-gate types 0: TO-5 0: IGT = 3 mA
1 : TO-5 with radiator 1: IGT = 4 mA
3: IGT = 25 mA
4: IGT = 10 mA; 400-Hz type
5: IGT ~ 25 mA; 400-Hz type
6: IGT = 25 mA; zero-voltage-switch type
0: Mod. TO-5 0: IGT = 25 mA

1 : TO-5 with radiator 1 IGT = 50 mA; 1+ and 111- modes
2 : TO-5 with heat spreader 4 : IGT = 4.25 mA; 400-Hz type
6 : zero-voltage-switch type
0: TO-66
1 : TO-66 with radiator
0: TO-66
Thyristor Numbering Matrix
TRIACS (cont'd)
Package Variants
o : press fit 0: IT(RMS) = 15 A
1 : stud 1 : IT(RMS) = 10 A
2 : iso lated stud 4: IT(RMS) = 15 A; 400-Hz type
5: IT(RMS) = 10 A; 400-Hz type
6: IT(RMS) = 15 A; zero-voltage-switch type
7 : IT(RMS) = 10 A; zero-voltage-switch type
0: IGT = 25 mA
1 : IGT = BO mA; 1+ and 111- modes
0: VERSAWATT 0: IGT = 25 mA
5: ISOWATT 1 : IGT = BO mA; 1+ and 111- modes
o : press-fit 0: IT(RMS) = 40 A
1 : stud 1 : IT(RMS) = 30 A
2 : iso lated stud 4: IT(RMS) = 40 A; 400-Hz type
5: IT(RMS) = 25 A; 400-Hz type
6: IT(RMSI = 40 A; zero-voltage-switch type
7: IT(RMS) = 30 A; zero-voltage-switch type
o : press-fit, flexible leads o : IT(RMS) = BO A

1 : stud, flexible leads 1 : IT(RMS) = 60 A
2 : isolated stud, flexible leads
3 : press-fit
4 : stud
5 : isolated stud
SCA's
Generic Class Package Variants Electrical Variants
S20 : 4-A plastic types 6: VERSAWATT o : IGT = 0_2 mA
1 : IGT = 0_5 mA
2 : IGT = 2_0 mA
S22 : 2-A types 0: TO-B
S24 : 4_5-A types 0: TO-B
S26 : 7-A types o : low-profile

TO-5
1 : modified TO-5 with radiator
2 : modified TO-5 with heat spreader
0: TO-66
0: IGT = 40 mA; VGT = 4 V

1 : IGT = 35 mA
2: IGT = 45 mA
3: VGT = 2 V
4: VGT = 3_5 V
5: IGT = 30 mA; V(SO) = 500 V
6: IGT = 30 mA; V(SO) = 400 V
S3B: ITR's 0: TO-66
S40 : 12_5-A types 0: TO-3
S62 . 1O-A and 20-A types 0 : press-fit o . IT(RMS) = 20 A

1 : stud 1 : IT(RMS) = 10 A
2 : isolated stud
S64 : 16-A, 25-A, and 35-A types 0: press-fit 0: IT(RMS) = 35 A

1 : stud 1 : IT(RMS) = 25 A
2 : isolated stud 2: IT(RMS) = 16 A
S74 : 35-A fast-turn-off types 3 : TO-4B
Index to Thyristors, Rectifiers and Diacs
RCA Former Data Sheet Page Type of Current Voltage RCA Former Data Sheet Page Type of Current Voltage
Type No. Type No.- File No. No. Device (AI (V) Type No. Type No.- File No. No. Device (A) (VI
lN248C 6 287 Rectifier 20 50 lN3910 729 342 Rectifier 30 100

lN249C 6 287 Rectifier 20 100 1N3911 729 342 Rectifier 30 200
lN250C 6 287 Rectifier 20 200 lN3912 729 342 Rectifier 30 300
1N440B 5 252 Rectifier 0.75 100 1N3913 729 342 Rectifier 30 400
lN441B 5 252 Rectifier 0.75 200 lN5211 245 270 Rectifier 1 200
lN444B 5 252 Rectifier 0.75 500 lN5214 245 270 Rectifier 0.75 800
lN536 3 255 Rectifier 0.75 50 lN5216 245 270 Rectifier 1 400
lN537 3 255 Rectifier 0.75 100 lN5217 245 270 Rectifier 1 600
lN538 3 255 Rectifier 0.75 200 lN5218 245 270 Rectifier 0.75 800
lNl095 3 255 Rectifier 0.75 500 lN5394 478 273 Rectifier 1.5 300
lN1183A 38 291 Rectifier 40 50 lN5395 478 273 Rectifier 1.5 400
lN1184A 38 291 Rectifier 40 100 lN5396 478 273 Rectifier 1.5 500
lNl186A 38 291 Rectifier 40 200 lN5397 478 273 Rectifier 1.5 600
1N1187A 38 291 Rectifier 40 300 lN5398 478 273 Rectifier 1.5 800
lNl188A 38 291 Rectifier 40 400 lN5399 478 273 Rectifier 1.5 1000
1Nl189A 38 291 Rectifier 40 500 2N681 96 225 SCR 25 25
lNl190A 38 291 Rectifier 40 600 2N682 96 225 SCR 25 50
lNl195A 6 287 Rectifier 20 300 2N683 96 225 SCR 25 100
lN1196A 6 287 Rectifier 20 400 2N684 96 225 SCR 25 150
1N1198A 6 287 Rectifier 20 600 2N686 96 225 SCR 25 250
lN1204A 20 283 Rectifier 12 400 2N1842A 28 234 SCR 16 25
lN1341B 58 281 Rectifier 6 50 2N1845A 28 234 SCR 16 150
lN1348B 58 281 Rectifier 6 600 2N3228 114 144 SCR 5 200
lN3193 41 294 Rectifier 0.75 200 2N3656 724 245 SCR 35 200
lN3196 41 294 Rectifier 0.5 800 2N3668 116 203 SCR 12.5 100
lN3253 41 294 Rectifier 0.75 200 2N3669 116 203 SCR 12.5 200
1N3254 41 294 Rectifier 0.75 400 2N3670 116 203 SCR 12.5 400
1N3256 41 294 Rectifier 0.5 800 2N3871 578 218 SCR 35 200
lN3879 726 323 Rectifier 6 50 2N3873 578 218 SCR 35 600
lN3891 727 331 Rectifier 12 200 2N4103 116 203 SCR 12.5 600
1N3892 727 331 Rectifier 12 300 2N5441 593 55 Triac 40 200
lN3893 727 331 Rectifier 12 400 2N5442 593 55 Triac 40 400
Applies to RCA 100,40000,41000,43000,44000, and 45000 Series ~umbers.
8
Index to Thyristors, Rectifiers and Diacs (cont'd)
RCA Former Data Sheet Page Type of Current Voltage RCA Former Data Sheet Page Type of Current Voltage
Type No. Type No.- File No. No. Device (A) (V) Type No. Type No.- File No. No. Device IA) (V)
2N5569 457 92 Triac 10 200 S2061M 107M 654 138 SCR 4 600
2N5570 457 92 Triac 10 400 S20610 1070 654 138 SCR 4 15
2N5571 458 85 Triac 15 200 S2061Y 107Y 654 138 SCR 4 30
2N5572 458 85 Triac 15 400 S2062A 108A 654 138 SCR 4 100
2N5573 458 85 Triac 15 200 S20628 1088 654 138 SCR 4 200
2N5574 458 85 Triac 15 400 S2062C 108C 654 138 SCR 4 300
2N5754 414 28 Triac 2.5 100 S20620 1080 654 138 SCR 4 400
2N5755 414 28 Triac 2.5 200 S2062E 108E 654 138 SCR 4 500
2N5756 414 28 Triac 2.5 400 S2062F 108F 654 138 SCR 4 50
2N5757 414 28 Triac 2.5 600 S2062M 108M 654 138 SCR 4 600
01201A 44002 495 271 Rectifier 1 100 S20620 1080 654 138 SCR 4 15
012018 44003 495 271 Rectifier 1 200 S2062Y 108Y 654 138 SCR 4 30
012010 44004 495 271 Rectifier 1 400 S2400A 40942 567 151 SCR 4.5 100
01201F 44001 495 277 Rectifier 1 50 S24008 40493 567 151 SCR 4.5 200
01201M 44005 495 277 Rectifier 1 600 S24000 40944 567 151 SCR 4.5 400
01201N 44006 495 271 Rectifier 1 800 S2400M 40945 567 151 SCR 4.5 600
01201P 44007 495 271 Rectifier 1 1000 S26008 40654 496 156 SCR 7 200
02101S 40892 522 298 Rectifier 1 700 S26000 40655 496 156 SCR 7 400
02103S 40891 522 298 Rectifier 3 700 S2600M 40833 496 156 SCR 7 600
02103SF 40890 522 298 Rectifier 3 750 S26108 40658 496 156 SCR 3.3 200
02201 A 44934 629 313 Rectifier 1 100 S26100 40659 496 156 SCR 3.3 400
022018 44935 629 313 Rectifier 1 200 S2610M 40835 496 156 SCR 3.3 600
022010 44936 629 313 Rectifier 1 400 S26208 40656 496 156 SCR 7 200
02201F 44933 629 313 Rectifier 1 50 S26200 40657 496 156 SCR 7 400
02201M 44937 629 313 Rectifier 1 600 S2620M 40834 496 156 SCR 7 600
02201N 44938 629 313 Rectifier 1 800 S27108 40504 266 164 SCR 1.7 200
02406A 43880 663 318 Rectifier 6 100 S27100 40505 266 164 SCR 1.7 400
024068 43881 663 318 Rectifier 6 200 S2710M 40506 266 164 SCR 1.7 600
02406C 43882 663 318 Rectifier 6 300 S2800A 40867 501 166 SCR 8 100
024060 43883 663 318 Rectifier 6 400 S28008 40868 501 166 SCR 8 200
02406F 43879 663 318 Rectifier 6 50 S28000 40869 501 166 SCR 8 400
02406M 43884 663 318 Rectifier 6 600 S37008 40553 306 172 SCR 5 200
02412A 43890 884 326 Rectifier 12 100 S37000 40554 306 172 SCR 5 400
024128 43891 664 326 Rectifier 12 200 S3700M 40555 306 172 SCR 5 600
02412C 43892 664 326 Rectifier 12 300 S3701M 40768 476 192 SCR 5 600
024120 43893 884 326 Rectifier 12 400 S3702SF 40889 522 194 SCR 5 750
02412F 43889 664 326 Rectifier 12 50 S3703SF 40888 522 194 SCR 5 750
02412M 43894 664 326 Rectifier 12 600 S3704A 690 180 SCR 5 100
02520A 43900 665 334 Rectifier 20 100 S37048 690 180 SCR 5 200
025208 43901 665 334 Rectifier 20 200 S37040 690 180 SCR 5 400
02520C 43902 665 334 Rectifier 20 300 S3704M 690 180 SCR 5 600
025200 43903 665 334 Rectifier 20 400 S3704S 690 180 SCR 5 700
02520F 43899 665 334 Rectifier 20 50 S3705M 40640 354 187 SCR 5 600
02520M 43904 665 334 Rectifier 20 600 S3706M 40641 354 187 SCR 5 600
02540A 40957 580 345 Rectifier 40 100 S3714A 690 180 SCR 5 100
025408 40958 580 345 Rectifier 40 200 S37148 690 180 SCR 5 200
025400 40959 580 345 Rectifier 40 400 S37140 690 180 SCR 5 400
02540F 40956 580 345 Rectifier 40 50 S3714M 690 180 SCR 5 600
02540M 40960 580 345 Rectifier 40 600 S3714S 690 180 SCR 5 700
02600EF 40644 354 303 Rectifier 1 550 S38000 41023 639 199 ITR* 5 400
02601A 723 308 Rectifier 1 100 S3800E 41019 639 199 ITR* 5 500
026018 TA7892 723 308 Rectifier 1 200 S3800EF 41022 639 199 ITR* 5 550
026010 TA7893 723 308 Rectifier 1 400 S3800M 41021 639 199 ITR* 5 600
026010F 40643 354 303 Rectifier 1 450 S3800MF 41018 639 199 ITR* 5 650
S3800S 41020 639 199 ITR* 5 700
02601EF 40642 354 303 Rectifier 1 550
02601F 723 308 Rectifier 1 50 S3800SF 41017 639 199 ITR* 5 750
02601M TA7894 723 308 Rectifier 1 600 S6200A 40749 418 210 SCR 20 100
02601N TA7895 723 308 Rectifier 1 800 S62008 40750 418 210 SCR 20 200
03202U 45412 577 350 Diac 2 pk 25-40 S62000 40751 418 210 SCR 20 400
03202Y 45411 577 350 Diac 2 pk 2935 S6200M 40752 418 210 SCR 20 600
S2060A 106A 654 138 SCR 4 100 S6210A 40753 418 210 SCR 20 100
S20608 1068 654 138 SCR 4 200 S62108 40754 418 210 SCR 20 200
S2060C 106C 654 138 SCR 4 300 S62100 40755 418 210 SCR 20 400
S20600 1060 654 138 SCR 4 400 S6210M 40756 418 210 SCR 20 600
S2060E 106E 654 138 SCR 4 500 S6220A 40757 418 210 SCR 20 100
S2060F 106F 654 138 SCR 4 50 S62208 40758 418 210 SCR 20 200
S2060M 106M 654 138 SCR 4 600 S62200 40759 418 210 SCR 20 400
S20600 1060 654 138 SCR 4 15 S6220M 40760 418 210 SCR 20 600
S2060Y 106Y 654 138 SCR 4 30 S0400N 40937 578 218 SCR 35 800
S2061A 107A 654 138 SCR 4 100 S6410N 40938 578 218 SCR 35 800
S20618 1078 654 138 SCR 4 200 S6420A 40680 578 218 SCR 35 100
S2061C 107C 654 138 SCR 4 300 S64208 40681 578 218 SCR 35 200
S20610 1070 654 138 SCR 4 400 S64200 40682 578 218 SCR 35 400
S2061E 107E 654 138 SCR 4 500 S6420M 40683 578 218 SCR 35 600
S2061F 107F 654 138 SCR 4 50 S6420N 40952 578 218 SCR 35 800
"Applies to RCA 100,4000.41000,43000,44000, and 45000, Series numbers. -Integrated thyristor and rectifier.
9
S6431M 4U,lb LA! LZl:S ::;CH jq.t IOU tU/IQ
"" '"
bUU 'IUb 'II I f1ac 'IUU
S7430M 40735 408 238 SCR 35 600 T4117B 40719 406 47 Triac 10 200
S7432M 724 245 SCR 35 600 T4117D 40720 406 47 Triac 10 400
T2300A 40525 470 33 Triac 2.5 100 T4120B 40802 458 85 Triac 15 200
T2300B 40526 470 33 Triac 2.5 200 T4120D 40803 458 85 Triac 15 400
T2300D 40527 470 33 Triac 2.5 400 T4120M 40804 458 85 Triac 15 600
T2301A 40766 431 40 Triac 2.5 100 T4121B 40799 457 92 Triac 10 200
T2301B 40691 431 40 Triac 2.5 200 T4121D 40800 457 92 Triac 10 400
T2301D 40692 431 40 Triac 2.5 400 T4121M 40801 457 92 Triac 10 600
T2302A 40528 470 33 Triac 2.5 100 T4706B 40715 406 47 Triac 15 200
T2302B 40529 470 33 Triac 2.5 200 T4706D 40716 406 47 Triac 15 400
T2302D 40530 470 33 Triac 2.5 400 T6400N 40925 593 55 Triac 40 800
T2304B 40769 441 41 Triac 0.5 200 T6401B 40660 459 107 Triac 30 200
T2304D 40770 441 41 Triac 0.5 400 T6401D 40661 459 107 Triac 30 400
T2305B 40771 441 41 Triac 0.5 200 T6401M 40671 459 107 Triac 30 600
T2305D 40772 441 41 Triac 0.5 400 T6404B 40791 487 114 Triac 40 200
T2306A 40696 406 47 Triac 2.5 100 T6404D 40792 487 114 Triac 40 400
T2306B 40697 406 47 Triac 2.5 200 T6405B 407B7 487 114 Triac 25 200
T2306D 40698 406 47 Triac 2.5 400 T6405D 40788 487 114 Triac 25 400
T2310A 40531 470 33 Triac 1.6 470 T6406B 40699 406 47 Triac 40 200
T2310B 40532 470 33 Triac 1.6 200 T6406D 40700 406 47 Triac 40 400
T2310D 40533 470 33 Triac 1.6 400 T6406M 40701 406 47 Triac 40 600
T2311A 40767 431 40 Triac 1.6 100 T6407B 40705 406 47 Triac 30 200
T2311B 40761 431 40 Triac 1.6 200 T6407D 40706 406 47 Triac 30 400
T2311D 40762 431 40 Triac 1.6 400 T6407M 40709 406 47 Triac 30 600
T2312A 40534 470 33 Triac 1.9 100 T6410N 40926 593 55 Triac 40 800
T2312B 40535 470 33 Triac 1.9 200 T6411B 40662 459 107 Triac 30 200
T2312D 40536 470 33 Triac 1.9 400 T6411D 40663 459 107 Triac 30 400
T2313A 40684 414 2B Triac 1.9 100 T6411M 40672 459 107 Triac 30 600
T2313B 40685 414 2B Triac 1.9 200 T6414B 40793 487 114 Triac 40 200
T2313D 40686 414 28 Triac 1.9 400 T6414D 40794 487 114 Triac 40 400
T2313M 40687 414 28 Triac 1.9 600 T6415B 40789 487 114 Triac 25 200
T2316A 40693 406 47 Triac 2.5 100 T6415D 40790 487 114 Triac 25 400
T2316B 40694 406 47 Triac 2.5 200 T6416B 40702 406 47 Triac 40 200
T2316D 40695 406 47 Triac 2.5 400 T6416D 40703 406 47 Triac 40 400
T2500B 41014 615 49 Triac 6 200 T6416M 40704 406 47 Triac 40 600
T2500D 41015 615 49 Triac 6 400 T6417B 40707 406 47 Triac 30 200
T2700B 40429 351 62 Triac 6 200 T6417D 40708 406 47 Triac 30 400
T2700D 40430 351 62 Triac 6 400 T6417M 40710 406 47 Triac 30 600
T2706B 40727 406 47 Triac 6 200 T6420B 40688 593 55 Triac 40 200
T2706D 40728 406 47 Triac 6 400 T6420D 40689 593 55 Triac 40 400
T2710B 40502 351 62 Triac 3.3 200 T6420M 40690 593 55 Triac 40 600
T2710D 40503 351 62 Triac 3.3 400 T6420N 40927 593 55 Triac 40 800
T2716B 40729 406 47 Triac 3.3 200 T6421B 40805 459 107 Triac 30 200
T2716D 40730 406 47 Triac 3.3 400 T6421D 40806 459 107 Triac 30 400
T2800B 40668 364 69 Triac 8 200 T6421M 40807 459 107 Triac 30 600
T2800D 40669 364 69 Triac 8 400 T8401B 41029 725 122 Triac 60 200
T2800M 40670 364 69 Triac 8 600 T8401D 41030 725 122 Triac 60 400
T2801DF 40842 493 75 Triac 6 450 T8401M 41031 725 122 Triac 60 600
T2806B 40721 406 47 Triac 8 200 T8411B 41032 725 122 Triac 60 200
T2806D 40722 406 47 Triac 8 400 T8411D 41033 725 122 Triac 60 400
T2850A 40900 540 79 Triac 8 100 T8411M 41034 725 122 Triac 60 600
T2850B 40901 540 79 Triac 8 200 T8421B 41035 725 122 Triac 60 200
T2850D 40902 540 79 Triac 8 400 T8421D 41036 725 122 Triac 60 400
T4100M 40797 458 85 Triac 15 600 T8421M 41037 725 122 Triac 60 600
T4101M 40795 457 92 Triac 10 600 T8430B 40916 549 130 Triac 80 200
T4103B 40783 443 99 Triac 15 200 T8430D 40917 549 130 Triac 80 400
T4103D 40784 443 99 Triac 15 400 T8430M 40918 549 130 Triac 80 600
T4104B 40779 443 99 Triac 10 200 T8440B 40919 549 130 Triac 80 200
T4104D 40780 443 99 Triac 10 400 T8440D 40920 549 130 Triac 80 400
T4105B 40775 443 99 Triac 6 200 T8440M 40921 549 130 Triac 80 600
T4105D 40776 443 99 Triac 6 400 T8450B 40922 549 130 Triac 80 200
T4106B 40711 406 47 Triac 15 200 T8450D 40923 549 130 Triac 80 400
T4106D 40712 406 47 Triac 15 400 T8450M 40924 549 130 Triac 80 600
T4107B 40717 406 47 Triac 10 200
T4107D 40718 406 47 Triac 10 400
T4110M 40798 458 85 Triac 15 600
T4111M 40796 457 92 Triac 10 600
T4113B 40785 443 99 Triac 15 200
T4113D 40786 443 99 Triac 15 400
T4114B 40781 443 99 Triac 10 200
T4114D 40782 443 99 Triac 10 400
T4115B 40777 443 99 Triac 6 200
T4115D 40778 443 99 Triac 6 400
T4116B 40713 406 47 Triac 15 200
Applies to RCA 100, 40000, 41000, 43000, 44000, and 45000 Series numbers.
10
RCA Thyristors/Rectifiers Type-Number Cross-Reference Guide
(Old numbers to NEW numbers)
NEW NEW
Former RCA Data Sheet Page Type of Current Voltage Former RCA Data Sheet Page Type of Current Voltage
RCA RCA
Type No. FileNo. No. Device (A) (V) Type No. File No. No. Device (AI (V)
Type No. Type No.
RCA106A S2060A 654 138 SCR 4 100 40680 S6420A 578 218 SCR 35 100
RCA106B S2060B 654 138 SCR 4 200 40681 S6420B 578 218 SCR 35 200
RCA106C S2060C 654 138 SCR 4 300 40682 S64200 578 218 SCR 35 400
RCA1060 S20600 654 138 SCR 4 400 40683 S6420M 578 218 SCR 35 600
RCA106E S2060E 654 138 SCR 4 500 40684 T2313A 414 28 Triac 1.9 100
RCA106F S2060F 654 138 SCR 4 50 40685 T2313B 414 28 Triac 1.9 200
RCA1060 S20600 654 138 SCR 4 15 40686 T23130 414 28 Triac 1.9 400
RCA106M S2060M 654 138 SCR 4 600 40687 T2313M 414 28 Triac 1.9 600
RCA106Y S2060Y 654 138 SCR 4 30 40688 T6420B 593 55 Triac 40 200
RCA107A S2061A 654 138 SCR 4 100 40689 T64200 593 55 Triac 40 400
RCA107B S2061B 654 138 SCR 4 200 40690 T6420M 593 55 Triac 40 600
RCA107C S2061C 654 138 SCR 4 300 40691 T2301B 431 40 Triac 2.5 200
RCA1070 S2061 0 654 138 SCR 4 400 40692 T23010 431 40 Triac 2.5 400
RCA107E S2061E 654 138 SCR 4 500 40693 T2316A 406 47 Triac 2.5 100
RCA107F S2061F 654 138 SCR 4 50 40694 T2316B 406 47 Triac 2.5 200
RCA1070 S20610 654 138 SCR 4 15 40695 T23160 406 47 Triac 2.5 400
RCA107M S2061M 654 138 SCR 4 600 40696 T2306A 406 47 Triac 2.5 100
RCA 107Y S2061Y 654 138 SCR 4 30 40697 T2306B 406 47 Triac 2.5 200
RCA108A S2062A 654 138 SCR 4 100 40698 T23060 406 47 Triac 2.5 400
RCA 108B S2062B 654 138 SCR 4 200 40699 T6406B 406 47 Triac 40 200
RCA108C S2062C 654 138 SCR 4 300 40700 T64060 406 47 Triac 40 400
RCA1080 S20620 654 138 SCR 4 400 40701 T6406M 406 47 Triac 40 600
RCA108E S2062E 654 138 SCR 4 500 40702 T6416B 406 47 Triac 40 200
RCA108F S2062F 654 138 SCR 4 50 40703 T64160 406 47 Triac 40 400
RCA1080 S20620 654 138 SCR 4 15 40704 T6416M 406 47 Triac 40 600
RCA108M S2062M 654 138 SCR 4 600 40705 T6407B 406 47 Triac 30 200
RCA108Y S2062Y 654 138 SCR 4 30 40706 T64070 406 47 Triac 30 400
40216 S6431M 247 228 SCR 35 600 40707 T6417B 406 47 Triac 30 200
40429 T2700B 351 62 Triac 6 200 40708 T64170 406 47 Triac 30 400
40430 T27000 351 62 Triac 6 400 40709 T6407M 406 47 Triac 30 600
40502 T2710B 351 62 Triac 3.3 200 40710 T6417M 406 47 Triac 30 600
40503 T27100 351 62 Triac 3.3 400 40711 T4106B 406 47 Triac 15 200
40504 S2710B 266 164 SCR 1.7 200 40712 T41060 406 47 Triac 15 400
40505 S27100 266 164 SCR 1.7 400 40713 T4116B 406 47 Triac 15 200
40506 S2710M 266 164 SCR 1.7 600 40714 T41160 406 47 Triac 15 400
40525 T2300A 470 33 Triac 2.5 100 40715 T4706B 406 47 Triac 15 200
40526 T2300B 470 33 Triac 2.5 200 40716 T47060 406 47 Triac 15 400
40527 T23000 470 33 Triac 2.5 400 40717 T4107B 406 47 Triac 10 200
40528 T2302A 470 33 Triac 2.5 100 40718 T41070 406 47 Triac 10 400
40529 T2302B 470 33 Triac 2.5 200 40719 T4117B 406 47 Triac 10 200
40530 T23020 470 33 Triac 2.5 400 40720 T41170 406 47 Triac 10 400
40531 T2310A 470 33 Triac 1.6 100 40721 T2806B 406 47 Triac 8 200
40532 T2310B 470 33 Triac 1.6 200 40722 T28060 406 47 Triac 8 400
40533 T23100 470 33 Triac 1.6 400 40727 T2706B 406 47 Triac 6 200
40534 T2312A 470 33 Triac 1.9 100 40728 T27060 406 47 Triac 6 400
40535 T2312B 470 33 Triac 1.9 200 40729 T2716B 406 47 Triac 3.3 200
40536 T23120 470 33 Triac 1.9 400 40730 T27160 406 47 Triac 3.3 400
40553 S3700B 306 172 SCR 5 200 40735 S7430M 408 238 SCR 35 600
40554 S37000 306 172 SCR 5 400 40749 S6200A 418 210 SCR 20 100
40555 S3700M 306 172 SCR 5 600 40750 S6200B 418 210 SCR 20 200
40640 S3705M 354 187 SCR 5 600 40751 S62000 418 210 SCR 20 400
40641 S3706M 354 187 SCR 5 600 40752 S6200M 418 210 SCR 20 600
40642 02601 EF 354 303 Rectifier 1 550 40753 S6210A 418 210 SCR 20 100
40643 026010F 354 303 Rectifier 1 450 40754 S6210B 418 210 SCR 20 200
40644 02600EF 354 303 Rectifier 1 550 40755 S62100 418 210 SCR 20 400
40654 S2600B 496 156 SCR 7 200 40756 S6210M 418 210 SCR 20 600
40655 S26000 496 156 SCR 7 400 40757 S6220A 418 210 SCR 20 100
40656 S2620B 496 156 SCR 7 200 40758 S6220B 418 210 SCR 20 200
40657 S26200 496 156 SCR 7 400 40759 S62200 418 210 SCR 20 400
40658 S2610B 496 156 SCR 3.3 200 40760 S6220M 418 210 SCR 20 600
40659 S26100 496 156 SCR 3.3 400 40761 T2311B 431 40 Triac 1.6 200
40660 T6401B 459 107 Triac 30 200 40762 T23110 431 40 Triac 1.6 400
40661 T6401D 459 107 Triac 30 400 40766 T2301A 431 40 Triac 2.5 100
40662 T6411B 459 107 Triac 30 200 40767 T2311A 431 40 Triac 1.6 100
40663 T6411D 459 107 Triac 30 400 40768 S3701M 476 192 SCR 5 600
40668 T2800B 364 69 Triac 8 200 40769 T2304B 441 41 Triac 0.5 200
40669 T28oo0 364 69 Triac 8 400 40770 T23040 441 41 Triac 0.5 400
40670 T2800M 364 69 Triac 8 600 40771 T2305B 441 41 Triac 0.5 200
40671 T6401M 459 107 Triac 30 600 40772 T23050 441 41 Triac 0.5 400
40672 T6411M 459 107 Triac 30 600 40775 T4105B 443 99 Triac 6 200
"
RCA Thyristors/Rectifiers Type-Number Cross-Reference Guide [cont'd]
(Old numbers to NEW numbers)
NEW NEW
Former RCA Data Sheet Page Type of Current Voltage Former RCA Data Sheet Page Type of CurrentVoltage
RCA RCA
Type No. FileNo. No. Device (A) (VI Type No. FileNo. No. Device (AI (VI
Type No. Type No.
40776 T41050 443 99 Triac 6 400 40960 02540M 580 345 Rectifier 40 600
40777 T4115B 443 99 Triac 6 200 41014 T2500B 615 49 Triac 6 200
40778 T41150 443 99 Triac 6 400 41015 T25000 615 49 Triac 6 400
40779 T4104B 443 99 Triac 10 200 41017 538005F 639 199 ITR* 5 750
40780 T41040 443 99 Triac 10 400 41018 53800MF 639 199 ITR* 5 650
40781 T4114B 443 99 Triac 10 200 41019 53800E 639 199 ITR* 5 500
40782 T41140 443 99 Triac 10 400 41020 538005 639 199 ITR* 5 700
40783 T4103B 443 99 Triac 15 200 41021 53800M 639 199 ITR* 5 600
40784 T41030 443 99 Triac 15 400 41022 53800EF 639 199 ITR* 5 550
40785 T4113B 443 99 Triac 15 200 41023 538000 639 199 ITR* 5 400
40786 T41130 443 99 Triac 15 400 41029 T8401B 725 122 Triac 60 200
40787 T6405B 487 114 Triac 25 200 41030 T84010 725 122 Triac 60 400
40788 T64050 487 114 Triac 25 400 41031 T8401M 725 122 Triac 60 600
40789 T6415B 487 114 Triac 25 200 41032 T8411B 725 122 Triac 60 200
40790 T64150 487 114 Triac 25 400 41033 T84110 725 122 Triac 60 400
40791 T6404B 487 114 Triac 40 200 41034 T8411M 725 122 Triac 60 600
40792 T64040 487 114 Triac 40 400 41035 T8421B 725 122 Triac 60 200
40793 T6414B 487 114 Triac 40 200 41036 T8421 0 725 122 Triac 60 400
40794 T64140 487 114 Triac 40 400 41037 T8421M 725 122 Triac 60 600
40795 T4101M 457 92 Triac 10 600 43879 02406F 663 318 Rectifier 6 50
40796 T4111M 457 92 Triac 10 600 43880 02406A 663 318 Rectifier 6 100
40797 T4100M 458 85 Triac 15 600 43881 02406B 663 318 Rectifier 6 200
40798 T4110M 458 85 Triac 15 600 43882 02406C 663 318 Rectifier 6 300
40799 T4121B 457 92 Triac 10 200 43883 024060 663 318 Rectifier 6 400
40802 T4120B 458 85 Triac 15 200 43890 02412A 664 326 Rectifier 12 100
40803 T41200 458 85 Triac 15 400 43891 02412B 664 326 Rectifier 12 200
40804 T4120M 458 85 Triac 15 600 43892 02412C 664 326 Rectifier 12 300
40806 T6421 0 459 107 Triac 30 400 43894 02412M 664 326 Rectifier 12 600
40833 52600M 496 156 5CR 7 600 43900 02520A 665 334 Rectifier 20 100
40834 52620M 496 156 5CR 7 600 43901 02520B 665 334 Rectifier 20 200
40835 52610M 496 156 5CR 3.3 600 43902 02520C 665 334 Rectifier 20 300
40842 T28010F 493 75 Triac 6 450 43903 025200 665 334 Rectifier 20 400
40867 52800A 501 166 5CR 8 100 43904 02520M 665 334 Rectifier 20 600
40868 52800B 501 166 5CR 8 200 44001 01201F 495 278 Rectifier 1 50
40869 528000 501 166 5CR 8 400 44002 01201A 495 278 Rectifier 1 100
40888 537035F 522 194 5CR 5 750 44003 01201B 495 278 Rectifier 1 200
40889 537025F 522 194 5CR 5 750 44004 012010 495 278 Rectifier 1 400
40890 021035F 522 298 Rectifier 3 750 44005 01201M 495 278 Rectifier 1 600
40891 021035 522 298 Rectifier 3 700 44006 01201N 495 278 Rectifier 1 800
40892 021015 522 298 Rectifier 1 700 44007 01201P 495 278 Rectifier 1 1000
40900 T2850A 540 79 Triac 8 100 44933 02201F 629 313 Rectifier 1 50
40901 T2850B 540 79 Triac 8 200 44934 02201A 629 313 Rectifier 1 100
40902 T28500 540 79 Triac 8 400 44935 02201B 629 313 Rectifier 1 200
40918 T8430M 549 130 Triac 80 600 44938 02201N 629 313 Rectifier 1 800
40919 T8440B 549 130 Triac 80 200 45411 03202Y 577 350 Diac 2 pk 29-35
40920 T84400 549 130 Triac 80 400 45412 03202U 577 350 Diac 2 pk 25-40
40921 T8440M 549 130 Triac 80 600 TA7892 02601B 723 308 Rectifier 1 200
40922 T8450B 549 130 Triac 80 200 TA7893 026010 723 308 Rectifier 1 400
40923 T84500 549 130 Triac 80 400 TA7894 02601M 723 308 Rectifier 1 600
TA7895 02601N 723 308 Rectifier 1 800
40924 T8450M 549 130 Triac 80 600
40925 T6400N 593 55 Triac 40 800
40926 T6410N 593 55 Triac 40 800 .. Integrated thyristor and rectifier.
40927 T6420N 593 55 Triac 40 800
40937 56400N 578 218 5CR 35 800
40938 5641ON 578 218 5CR 35 800
40942 52400A 567 151 5CR 4.5 100
40943 52400B 567 151 5CR 4.5 200
40944 524000 567 151 5CR 4.5 400
40945 52400M 567 151 5CR 4.5 600
40952 56420N 578 218 5CR 35 800
40956 02540F 580 345 Rectifier 40 50
40957 02540A 580 345 Rectifier 40 100
40958 02540B 580 345 Rectifier 40 200
40959 025400 580 345 Rectifier 40 400
12
1CE-402 "Operating Considerations for RCA Solid-State Devices" 354
AN-3418 "Design Considerations for the RCA-S6431M Silicon Controlled

Rectifier in High-Current Pulse Applications" 359
AN-3469 "Application of RCA Silicon Controlled Rectifiers to the

Control of Universal Motors" 364
AN-3551 "Circuit Factor Charts for RCA Thyristor Applications

(SCR's and Triacs)" 375
AN-3659 "Application of RCA Silicon Rectifiers to Capacitive Loads" 380
AN-3697 "Triac Power-Control Applications" 386
AN-3778 "Light Dimmers Using Triacs" 394
AN-3780 "A New Horixontal-Deflection System Using RCA-S3705M and

S3706M Silicon Controlled Rectifiers" 400
AN-3822 "Thermal Considerations in Mounting of RCA Thyristors" 410
AN-3886 "AC Voltage Regulators Using Thyristors" 416
AN-4124 "Handling and Mounting of RCA Molded-Plastic Transistors

and Thyristors" 422
AN-4242 . . . . . . . . . . . . "A Review of Thyristor Characteristics and Appl ications" 430
AN-4537 "Thyristor Control of Incandescent Traffic-Signal Lamps" 444
AN-4745 "Analysis and Design of Snubber Networks for dv/dt

Suppression in Thyristor Circuits" 451
AN-6054 "Triac Power Controls for Three-Phase Systems" 456
AN-6096 "Solid-State Approaches to Cooking-Range Control" .462
AN-6141 "Power Switching Using Solid-State Relay" 470
ICAN-6182 "Features and Applications of RCA

Integrated-Circuit Zero-Voltage Switches" 475
ReA
Triacs
m Modified TO-S
~~
~ Mod. TO-S
With Heat
Radiator
IT(AMS) 2.5A 2.5A 2.5A 2.5A 2.5A 2.5A 2.5A 2.5A

ITSM 25A 25A 25A 25A 25A 25A 25A 25A
VOROM(Vl 100 T230QA T2301A T2302A 2N5754 T2313A T2310A T2312A T2311A
200 T2300B T2301 B T23028 2N5755 T2313B T2310B T23128 T23118
400 T2300D T2301D T2302D 2N5756 T2313D T2310D T2312D T23110
..
0
a: 450
..in
0
Z
IGT(mAl
600
800
2N5757 T2313M
1+,111- 3 4 10 25 25 3 10 4
1-,111+ 3 4 10 40 40 3 10 4
VGT(V)
All Modes 2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2
File No. 470 431 470 414 414 470 470 431
Page No. 33 40 33 28 28 33 33 40
VOROM(V) 100 T2306A T2316A
w
200 T2306B T23168
"""
~~
400
450
T2306D T2316D
0_
600
>~
0'" IGT(mAI
:li
N
1+,111- 45 45
VGT(VI
1+,111+ 1.5 1.5
File No. 406 406
Page No. 47 47
IT RMS) a.SA a.SA
VOROM(VI 200 T23048 T23058
Z 400 T2304D T23050
~g tGT(mAl
..
8~~
0
1+.111-
1 .111+
10
10
25
40
VGT(V)
All Modes 2.2 2.2
File No. 441 441
Page No. 41 41
TO66 TO66 TO-22DAB Press Fit
With
.(t~'
Heat
Radiator
,.
~
ReA
Triacs
IT(RMSI
,"
6.DA
o?
15.0A
-
6.0A 6A 6A
~~ '"
VER$AWATT
B.OA
ISOWATT
8A 10.0A 15.0A
'T<M 10QA 100A 10QA 60A 100A 100A 100A 100A 100A
VDROM(VI 100 T2B50A
200 T2700B T2710B T2500B T2800B T2850B 2N5567 2N5571
..
c
a: 400 T2700D T2710D T2500D T2800D T2B50D 2N5568 2N5572
..
C
Z
I-
450
600
T2801DF
T2800M T4101M T4100M
'" 800
IGT(mAl
1+,111- 25 25 25 80 25 25 25 50
1-,111+ 40 40 60 - 60 60 40 80
VGT(VI
All Modes 2.2 2.2 2.5 4.0 2.5 2.5 2.5 2.5
File No. 351 351 615 493 364 540 457 458
Page No. 62 62 49 75 62 79 92 85
VOROMIV) 100
200 T2706B T4706B T2716B T2806B T4107B T4100B
"..':;:1:
w
400 T2706D T47060 T27160 T2806D T41070 T41060
450
CU
>~ 600
o~ 'GT(mAI
ffiN
1+,111- 45 45 45 45 45 45
VGT(VI
1+,111+ 1.5 1.5 1.5 1.5 1.5 1.5
File No. 406 406 406 406 406 406

Page No. 47 47 47 69 69 69
IT(RMSI 6A 10.A 15.0A
VOROM(VI
200 T4105B T4104B T4103B
z 400 T41050 T4104D T41030
0
~S
" ..
Ow
IGT(mAI
1+,111- 50 50 50
1 , 111+ 80 80 80
0
VGT(VI
All Modes 2.5 2.5 2.5
File No. 443 443 443
Page No.
99 99 99
Stud Press Fit Stud
__ v
0:)
-;; ~.
ReA \
,
Triacs Isolated
Stud
'TIRMSI 10.0A 15.0A 10.0A 15.0A 30.0A 40.0A 30.0A 40.0A

ITSM looA looA lOOA looA 300A 300A 300A 300A
VOROM(V) 100
200 2N5569 2N5573 T4121B T4120B T6401B 2N5441 T64118 2N5444
c 400 2N5570 2N5574 T4121D T4120D T64010 2N5442 T64110 2N5445
a:
450
"
C
.."
Z 600
800
T4111M T4110M T4121M T4120M T6401M 2N5443
T6400N
T6411M 2N5446
T6410N
'" IGT(mA)
1+,111- 25 50 25 50 50 50 50 50
1-;111 40 80 40 80 80 80 80 80
VGTIV)
All Modes 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5
File No. 457 458 457 458 459 593 459 593
Page No. 92 85 92 85 107 55 107 55
VOROMIV)
100
w 200 T4117B T4116B T64078 T6406B T6417B T64168
""~:r 400 T4117D T41160 T6407D T64060 T6417D T64160
OU 450
>!: 600 T6407M T6406M T6417M T6416M
o~ IGT(mA)
ffi
N 1+.111- 45 45 45 45 45 45
VGTIV)
1+.111+ 1.5 1.5 1.5 1.5 1.5 1.5
File No. 406 406 406 406 406 406
Page No. 69 69 47 47 47 47
'TIRMSI 6A 10.0A 15.0A 25.0A 40.0A 25.0A 40.0A
VOROMIV) 200 T41158 T4114B T41138 T64058 T64048 T64158 T6414B
Z 400 T41150 T41140 T41130 T64050 T64040 T64150 T64140
0
~i= IGT(mA)
8:
.. ~ 1+.111-
1-.111+
50
80
50
80
50
80
80
'20
80
120
80
120
80
120
0
VGTIV)
All Modes 2.5 2.5 2.5 3.0 3.0 3.0 3.0
File No. 443 443 443 487 487 487 487
Page No. 99 99 99 114 114 114 114
I
,--...
Isolated
Stud
Press
Fit
K, K-1
" .
Stud
l, l-l
, ~
"0.
Stud
M,
M'
ReA J
~
,
1 I,
'9
Triacs
IT(AMSI 30.0A 40.0A 60A 80A 60A 80A 60A 80A
lTSM 300A 300A 600A 850A 600A 850A 600A 850A
VOAOMIV) 100
200 T64218 T6420B T84018 T84308 T84118 T84408 T84218 T84508
C 400 T6421 0 T64200 T8401D T84300 T84110 T84400 T8421 0 T84500
C
"''" 450
Z 600 T6421M T6420M T8401M T8430M T8411M T8440M T8421M T8450M
'"
>-
800 T6420N
'" IGT(mAl
1+,111- 50 50 75 75 75 75 75 75
1 .111+ 80 80 '50 '50 '50 '50 150 150
VGTIVI
All Mod" 2.5 2.5 2.8 2.5 2.8 2.5 2.8 2.5
File No. 459 593 725 549 725 549 725 549
Page No. '07 55 122 '30 '22 '30 '22 130
VOAOMIVI
100
w
200
">-'"
... :z:
400
0 450
>>-
o~ 600
"''''
w
N
IGT(mA)
1+,111-
VGT(V)
1+,111+
File No.
Page No.
ITIAMS)
VOAOM(VI 200
z 400
0
~~ IGT(mA)
8~
..~ 1+,111-
0 1,111+
VGT(V)
All Modes
File No.
Page No.
TO-8 TO-66
]\
.. o-
RCA
SCR's
IT{AM5) 2.0A 4.5A 5.0A FTO FTO FTO FTO FTO FTO
5.0A 5.0A 5A 5.0A 5.0A 5.0A
IT5M 60A 200A 60A 80A 80A 80A 75A(lPMI 50A 50A
VOROM 15
VRROMIVI 25
30
50
'00 52400A 53704A
150
200 2N3528 524008 2N3228 537008 537048
250
300
400 2N3529 524000 2N3525 537000 537040
500
600 2N4102 52400M 2N4101 m~~ 53700M 53704M 53701M
700 537045 537025
750 537035F
800
IGT(mAI 15 15 15 30 40 40 35 45 40
VGT(V) 2 2 2 4 3.5 3.5 4 4 4
File No. 114 567 114 354 306 690 476 522 522
Page No. 144 151 '44 187 172 180 192 '94 194
TG-66 With Low Profile To-5 To-5 TG-220AB
.at Rad. Mod. TG-S With Heat With
m d,
R Heat
Spreader
~~
RCA -
SCR'S ~~
VERSAWATT
'"
tTIRMSI 5.0A FTO 7.0A 3.3A 7.0A 4.OA 4.OA 4A B.oA
SA
IT5M 60A 80A looA ,00A ,00A 35A 35A 35A looA
VOROM '5 520600 520610 520620

VRROMIV) 25
30 5206QY 52061Y 52062Y
50 52060F 52061F 52062F
100 53714A 52060A 52061 A 52062A 52BooA
150
200 527108 S37148 526008 526108 526208 520608 520618 520628 528008
250
300 5206QC 52061C 52062C
400 527100 537140 526000 526100 526200 520600 520610 520620 528000
500 52060E S2061E S2062E
600 S2710M 53714M S2600M S2610M 52620M S2060M S2061M 52062M
700 S3714S
750
800
IGT(mAl '5 40 15 15 '5 0.2 0.5 2 '5
VGT(Vl 2 3.5 1.5 1.5 1.5 0.8 0.8 0.8 '.5
File No. 266 690 496 496 496 654 654 654 50'
Page No. 164 180 156 156 '56 138 138 '38 '66
TO-3 Press Fit Stud
. ,. ~'J
I
=:
p
'DiJ
W:<II
Q
~
\.
RCA
SCR's . i
IT(RM5l 12.5A 20.0A 35.0A 20.0A 35.0A
ITSM 200A 200A 350A 200A 350A
VOROM 15
VRROM(VI 25
30
50
100 2N3668 S6200A 2N3870 S6210A 2N3896
150
200 2N3669 862008 2N3871 562108 2N3897
250
300
400 2N3670 862000 2N3872 862100 2N3898
500
600 2N4103 86200M 2N3873 86210M 2N3899
700
750
800 86400N S641QN
IGT(mA) 40 15 40 '5 40
VGT(V) 2 2 2 2 2
File No. 116 418 578 418 578
Page No. 203 210 218 210 218
Isolated TD-48
Stud
~.
oW
RCA
SCR's
'T(RM51 20.0A 35.0A 1G.OA 25.0A Pul. FTO FTO
Mod. 35.0A 35A
35.0A
'TSM 200A 3SOA 125A 150A 1SOA 180A 2SOA

VOROM '5
VRROM(V) 25 2N1842A 2N681
30
SO 2N1843A 2N682 2N3654
100 S6220A 56420A 2N1844A 2N683 2N3650 2N3655
'50 2N1845A 2N684
200 56220B 56420B 2N1846A 2N685 2N3651 2N3656
250 2N1847A 2N6B6
300 2N164BA 2N6B7 2N3652 2N3657
400 562200 564200 2N1849A 2N688 2N3653 2N3658
500 2N1850A 2N689
600 56220M S6420M 2N690 S6431M S7430M S7432M
700
750
BOO S6420N
IGT(mA) '5 40 45 25 80 180 ,BO
VGTIVI 2 2 3.5 3 2 3 3
File No. 4'B 578 28 96 247 408 724
Page No. 2'0 2'8 234 225 228 23B 245
,
00.1 00.26
I
I I
RCA
Rectifiers
'0
IFSM
VRRM(VI 50
O.75A
15A
0.75A
15A
lN536
*
I
lA
35A
lA
35A
lN2858A
0.75A
35A
O.75A
Insu-
lated
35A
I
lA
50A
1A
Insu-
lated
50A
100 tN440B lN537 lN2859A

200 lN441B lN538 lN2860A lN3193 lN3253 lN5211 lN5215
300 ,UA41B "lN539 lN2881A
400 lN4438 lN540 lN1763A lN2B62A lN3194 lN3254 lN5212 lN5216
500 tN444B lNl095 lN1764A lN2883A
600 tN445B lN547 lN2964A lN3195 lN3255 lN5213 lN5217
800 'N3196 lN3256 lN5214 lN5218
1000 lN3563
File No. 5 3 89 91 4' 41 245 245
Page No. 252 255 258 265 294 294 270 270
~
I
I
RCA
Rectifiers
'0
IFSM
VRRMIVI 50
100
--
Plastic
lA
30A
D120tF
D1201A
D().lS
(Plastic)
1.5A
50A
lN5391
lN5392
6A
150A
lNl341B
lNl342B
00-4
12A
240A
lN1199A
lNl200A
20A
350A
lN248C
lN249C
00-5
40A
800A
tNt183A
lN1184A
200 012018 'N5393 lN13448 lNI202A lN250C lN1186A
300 lN5394 tNl345B tNl203A tN1196A tNtlS7A
400 012010 lN5395 lNl3488 lNl204A lN1196A lN1188A
500 lN5396 lNl3478 tN1205A lN1197A lN1189A
600 D1201M lN5397 lNl3488 lNl206A tN1198A lNlt90A
800 01201N lN5398
1000 D1201P lN5399
File No. 495 478 58 20 6 38
Page No. 277 273 281 283 287 291
~
RCA
Rectifiers
~
00-26
, I
Plastic 00-4
20A 20A
t OO-S
30A 40A
'0 lA lA 6A 6A 12A 12A
IFSM 3SA SOA 7SA 125A 150A 25QA 225A 30M 300A 700A
VRRMIV) 50 02601 F 02201 F lN3879 D2406F lN3889 D2412F lN3899 D2520F lN3909 D2540F
100 02601 A 02201 A lN3880 D2406A lN3890 D2412A .'IN3900 D2520A lN391Q 02S40A
200 026018 02201 B lN3881 024068 lN3891 024128 lN3901 025208 lN3911 025408
300 lN3882 02406C lN3892 D2412C 1N3902 D2520C lN3912
400 026010 022010 lN3BS3 024060 lN3893 024120 lN3903 025200 lN39'3 025400
500
600 D2601M D2201M D2406M D2412M 02520M D2540M
800 D2601N D2201N
1000
Reverse
Recovery
Timetrr
Typ. 200 ns. 200 ns. - 200 ns. - 200 ns. - 200 ns. - 200 ns.
Max. 500 ns. SOD ns. 200 ns. 350 ns. 200 ns. 350 ns. 200 ns. 350 ns. 200 ns. 350 ns.
File No. 723 629 726 663 727 664 728 66S 729 580
Page No. 308 313 323 318 331 326 339 334 342 345
l
I
I
RCA
Rectifiers
'0
IFSM
Trace
Commutallng
IA
70A
02601 EF
IA
~
0026
lOA
02601 OF
lA
20A
-
70A
D2103SF
021035
00-1
30A
-
00-15
!Plastlcl
lA
50A
D12Q1M
02201M
linearity D2600EF 02201 a
Regulator 02201 B
Clamp 021015
File No. 354 354 354 522 522 629
Page No. 303 303 303 298 298 313
RCA
Diacs
, I
00-15
(Plastic)
D3202Y 03202U
'ok 2A 2A
VISO' 29 min. 35 max. V 25 min. 40 max. V
H-VISOII- l-vlBOII +3 max. V +3 max. V
IC>V 9 min. V 9 min. V
File No. 517 517
Page No. 350 350
.....
- ...
T
--"-
RCA
ITR's* TO-56
IT(AMS) TRACE RETRACE

5A 5A
'TSM 50A 50A
VOROM(V) 400 538000
500 S3800E
550 S3800EF
600 S3800M
650 S3800MF
700 538005
750 S3800SF
IGT(mA) 40 45
VGT(V) 4 4
File No. 639 639
Page No. 199 199
Appl ication Information
Triacs
LOW-CURRENT SENSITIVE-GATE
Current Voltage
Package Series Typical Applications
IT(RMS)-A Range V
1.6- 2.5 100-400 TO-5 & TO-5 w Red. T2300 T2310 Ie Control Circuit to Power Control
T2301 T2311
T2302 T2312
1.9 - 2.5 100-600 TO-5 & TO-5 w Red. 2N5757 T2313

6 200-400 TO-220AB (VERSAWATT) T2500
3.3 - 6 200-600 TO-66 & TO-66 w Red. T2700 T2710
6-8 100-450 TO-220AB (VERSAWATTI T2800 T2850
T2801
15 200-600 Press-Fit 2N5572 T4100
15 200-600 Stud 2N5574 T4110
15 200-600 Isolated-Stud T4120
10 200-600 PressFit 2N5568 T4101
10 200-600 Stud 2N5570 T4111 General Purpose
10 200-600 Isolated-Stud T4121 AC Power Switching
15 200-600 TO-66 T4700 Light Control
40 200-800 Press-Fit 2N5443 T6400 Motor Control-Static & Speed
40 200-800 Stud 2N5446 T6410 Heat/Comfort Control
40 200-800 Isolated-Stud T6420 Solid State Static Switching
30 200-600 Press-Fit T6401 Three Phase Power Control
30 200-600 Stud T6411
60 200-600 Press-Fit, Flex. Id T8401
60 200-600 Stud Flex. Id T8411
Flex.ld
80 200-600 Press-Fit T8430
80 200-600 Stud T8440
0.5 200-400 TO-5 T2304 T2305

15 200-400 Press-Fit T4103
15 200-400 Stud'" T4113
10 200-400 Press-Fit T4104 Airborne-Type Equipment and
10 200-400 Stud T4114 60-Hz Applications Requiring
6 200-400 Press-Fit T4105 High Commutating dv/dt
6 200-400 Stud . T4115 Motor Starters
40 200-400 Press-Fit T6404
40 200-400 Stud .. T6414
25 200-400 Press-Fit T6405
25 200-400 Stud .. T6415
Triacs in most series are characterized for applications utilizing Zero-Voltage switching with
RCA-CA3058, CA3059, and CA3079 IC triggering circuits - see product matrix for types in each series.
For Types not listed, contact your RCA Representative.
2 200-600 TO-8 2N4102 Fuel Igniters

4.5 100-600 TO-8 S2400 CD Ignition, "Crowbars"
3.3 - 7 200-600 TO-5, TO-5 w Red., S2600 52610 CD Ignition
TO-5 w Spdr. S2620
1.7 - 5 200-600 TO-66 & TO-66 w Red. 2N4101 S2710 CD Ignition, Small Motor Control
8 100-400 TO-220AB (VERSAWATT) S2800 CD Ignition, Regulators,
Small Motor Control,
and General Purpose
12.5 100-600 TO-3 2N4103
20 100-600 Press-Fit S6200
General Purpose
20 100-600 Stud S2610
20 100-600 Isolated-Stud S6220
Application Information
SCR's (cont'd)
GENERAL PURPOSE PHASE CONTROL
Current Voltage
IT(RMS)-A Range V
10 100-600 Press-Fit S6201
10 100-600 5tud 52611 General Purpose
10 100-600 IsolatedStud 56221
35 100-800 Press-Fit 2N3873
35 100-800 5tud 2N3899
35 100-800 Isolated-Stud 526420
25 25-600 TO-48 2N690
16 25-500 TO-48 2N1850A
5 200-600 TO-66 53700 High-Frequency Power Supplies

5 600 TO-66 53701 Laser Diode Driver
5 700-750 TO-66 53702 53703 110 TV Deflection
5 100-700 TO-66 & TO-66 w Rad. 53704 53714
5 600 TO-66 53705 53706 90 TV Deflection
35 600 TO-48 56431 Pulse Modulators
35 50-600 TO-48 2N3653 2N3658 I nverters, Choppers
ITR's
TV Horizontal Deflection
5 400- 750 TO-66
Rectifiers
STANDARD-lead-Type Hermetic and Plastic Packages
Current Voltage
IO-A Range - V
0.75 100-600 00-1 1N445B 1N547
1 50-600 00-1 lN1764A 1N2864A
1.5 50-1000 Plastic 1N5399 01201
0.75 200-800 00-26 1N3196
1 200-800 00-26 lN5214 General Purpose
0.75 200-1000 00-26 lN3563
1 200-800 00-26 lN5218
6 50-600 00-4 1N1348B

12 50-600 00-4 1N1206A General Purpose
20 50-600 00-5 1N1198A
40 50-600 00-5 lN1190A
Current Voltage
IF(RMSrA Range - V
3 700-750 00-1 02102 TV Deflection. Inverters,
1.5 50-800 00- 15 (Plastic) 02201 and High-Frequency
1.9 50-800 00-26 02601 Power Supplies
9 50-600 00-4 1N3883 02406

18 50-600 00-4 lN3893 02412 Inverters and High-Frequency
30 50-600 00-5 1N3903 02520 Power Supplies
30 50-400 00-5 1N3913
60 50-600 00-5 02540
Triacs
[Klm3LJD 2N5754 2N5756
Thyristors
Solid State
Division 2N5755 2N5757
T2313 Series
MAIN
TERMINAL 2
n:-~:~:.
,"Cjl
I
l-L
1 INAL 1
GATE
For
For
Low-Voltage Operation
120-V Line Operation -
- 2N5754, T2313A (40684)-
2N5755, T2313B (40685)-
For 240-V Line Operation - 2N5756, T2313D (40686)-
I For High-Voltage Operation - 2N5757, T2313M (40687)-
I
J I
3/ 171
2N5754
Features:
2N5755
2N5756 .25/40 mA IGT Shorted Emitter Design
2N5757
3-Lead Package for Printed Circuit Board Applications
Small Size ... Suitable for Remote Switching Applications
These RCA triacs are gate-controlled full-wave silicon ac MAXIMUM RATINGS, Absolute-Maximum Values:
switches that are designed to switch from an off-state to an For Operation with 50/60-Hz, Sinuosidal Supply Voltage
Resistive or Inductive Load
on-state for either polarity of applied voltage with positive or
REPETITIVE PEAK OFF-STATE VOLTAGE V DROM
negative gate triggering voltages.
Gate Open, TJ = 65 to 100C
2N57 54, T2313A _ ... - .. 100
The gate sensitivity of these triacs permits the use of 2N5755,T23l3B . 200
economical transistorized control circuits and enhances their 2N5756, T23l3D . 400
2N5757, T23l3M. 600
use in low-power phase control and load-switching appli-
RMS ON-STATE CURRENT IT(RM5)
cations.
Conduction angle 360; 0
Types 2N5754, 2N5755, 2N5756, 2N5757* utilize a * Case temperature (TC) = 70 C

2N5754, 2N5755, 2N5756, 2N5757
compact package (similar to JEDEC TO-51 and have an RMS
Ambient temperature (TA) = 2SoC
on-state current rating of 2.5 A and repetitive peak off-state T23 I 3 serie~ 1.9 A
voltage ratings of 100, 200,400, and 600 volts, respectively. For other conditions. See Figs. 2,3.4, & S.
PEAK SURGE (NON-REPETITIVE)
Types T2313A, T2313B, T2313D, T2313M'" are the same as ON-STATE CURRENT IT5M
the 2N5754, 2N5755, 2N5756, 2N5757, respectively but * For one full cycle of applied principal
voltage (6o-Hz, sinusoidal) 25 A
have factory-attached heat-radiators and are intended for
For one full cycle of applied principal
printed-circuit board applications. voltage (50-Hz, sinusoidal) . 21 A
For more than one full cycle of applied
voltage .. See Fi~.6.
PEAK GATE-TRIGGER CURRENT IGTM

For 1 J.J.s1 max A
GATE POWER DISSIPATION:
P
PEAd GM
For 1 J.J.smax 10 W
AVERAGE PG(AV)
* Forcase temperature
o
(TC) = 60 C. 0.15 W
* For ambient temperature
o
(TA) = 2s C ... 0.05 W
For either polarity of main terminal 2 voltage (VMT2) with reference TEMPERATURE RANGEf:
to main tenninal l. Storage. . . . -65 to 150 c
t For either polarity of gate voltage (VG) with reference to main Operating (case) . -65 to 100 c
terminal 1.
LEAD TEMPERATURE:
t For infonnation on the reference point of temperature measurement, During soldering, terminal temperature at
see Dimensional Outlines. a distance ~ 1/16 in. (1.58 mm) from the
case for 10 s ..................
In accordance with JEDEX:; registration data format (JS-14, RDF-2).
LIMITS
ALL TYPES
CHARACTERIST IC SYMBOL UNITS
Min. Typ. Max.
Peak Off-State Current:.
IOROM
Gate Open, TJ = 1000C and VDROM = Max. rated value 02 075 mA
Maximum On-State Voltage:.

For iT = 10 A (peak) and TC = 25C ........... ..... - ... VTM 2.2 2.6 V
For iT = 3.5 A (peak) and TC = 250C .. ................ 1.8
DC Holding Current:.
Gate Open, Initial principal current = 150 mA (OCl, VO= 12V
At TC = 25C .. IHO 6 35 mA
At TC = -65C .. .......................... . ..... 20 82 -
For other case temperatures ... .. ................... - See Fig.8.~
Critical Rote-of.Rise of Off.State Voltage:.

For Vo = VOROM, exponential voltage rise, dvldt
and gate open, TC = lOOoC 10 100 VIpS
DC Gate-Trigger Current:. t Mode VMT2 VG

For Vo = 12 V (OCl, I' ositive positive 5 25
RL = 300 , and III" egative negative 5 25
TC = 25C I' positive negative 10 40
111+ negative positive 10 40
IGT mA
TC = -65C 1+ positive positive 30 60 -
III negative negative 30 60 -
I' positive negative 40 100 -
111+ negative positive 40 100 -
F or other case temperatures .. -See Fig.1! ~
DC Gote-Trigger Voltage:- t
For Vo = 12 V (OCI and RL = 300
At TC = 25C .. . ...... .... .... ....... . ... ... 0.9 2.2
At TC = -65C . .. . . ....... . .. .. .... . ... . ... .... ... ........ VGT 1.5 3- V
For other case temperatures .. ... , ......... ....... -See Fig.12. ~
For vo = VOROM and RL = 1250
At TC = 1000C ........ ....... ........... ......... 0.2
Thermo I Res istonce, Junction_fa_Case:
SteadyState ......... .......... BJC 8.5 C/W
For either polarity of main terrlliral 2 voltage (VMT2)

With reference main terminal .
In accordance with JEOEC registration data format
US'l4, ROF 2).
QUADRANT
No.1
MAIN TERMINAL 2
--ON POSITIVE
STATE
/IH
,;
QUADRANT IH
No. III
MAIN TERMINAL 2 ON
NEGATIVE STATE _ T
CURRENT WAVEFORM: SINUSOIDAL
LOAD: RESISTIVE OR INDUCTIVE
CONDUCTION ANGLE: 3600
CASE TEMPERATURE (TC): MEASURED I
rl~ ~
Gml
AS SHOWN ON DIMENSIONAL OUT LINE
0 180"\J36<:J'
'"'"5;> 100
CONDUCTION ANGLE
81 + 8
"'- m
'"-',,-....u 90
~ '"
Ocr
-' ...." 80
" c"r
"" "''"- 70
"x'"...."
" 60
0.5 1.5 2 2.5 3.5
123 RMS ON-STATE AMPERES [IT(RMS1]

fULL-CYCLE RMS ON-STATE AMPERES [ITtRMSI] 92LS-138eR3
Fig. 2 - Power dissipation 10'3". on-state current. Maximum allowable case temperature vs. on-state
current.
FORCED-AIR COOLED,400 TO 1000 FT/MIN,HEAT RADIATOR ATTACHED.

TRIAC WITH HEAT RADIATOR
TRIAC,NO HEAT RADIATOR, PRINTED-CIRCUIT BOARD MOUNTED.
CURRENT WAVEFORM: SINUSO IOAL
lOAD; RESISTIVE OR INDUCTIVE
~'~ @TRIAC,NO HEAT RADIATOR
100 . . __ .~ ~.
CONOUCTION ANGLE: 360
!
FOR DEVICE SOLDERED
100 ON 1/16- THICK COPPER
HEAT SINI<, TEMPER-
'"
Z ATURE MEASURED ON
'" u 90
~
HEAT SINK 1/4" FROM
". CASE CAP.
'l'1 LEAD LENGTH ~ I"
MOUNTING
"'~ ....~ 80
0)- :Q114'
""
~cr
0",
j ~ 70 FOR DEVICE SOLDERED
" ....
"", ON JfI6"-THICK COPPER
ffiUNT'NG HEAT SINK. TEMPER
""
ATURE MEASURED ON
60
.,X HEAT
CASE
SINK
CAP.
1/4~ FROM
" 50
LEAD LENGTH ~ I"
0.5 I 1.5 2 2.5
RMS ON-STATE AMPERES [InRMSI]
92LS- 2.097"2
Fig. 5 - Maximum allowable ambient temperature vs. on-state
current.
SUPPLY FREQUENCY: 50/60 Hz
~~~D~~:~~~~r~EAMPERES [IT(RMSJ] :2.5

'" CASE TEMPERATURE ITel: 70C
~
z I I I I I I
o 25
GATE CONTROL MAY BE LOST DURING AND -
1'\ IMMEDIATELY FOLLOWING SURGE CURRENT
~'i -
.... '" INTERVAL.
~; 20
" ""- OVERLOAD MAY NOT BE REPEATED UNTIL
JUNCTION TEMPERATURE HAS RETURNED TO
~~ "-
~~ 15 , STEADY - STATE RATED VALUE.
z"'-
-"
~4
~
10
"" -........ ~H'
I
'" 50 Hz
~ 5
I
0 I
4 2 4 6
I 2
POSITIVE OR NEGATIVE
3
INSTANTANEOUS
ON- STATE VOLTS (\IT) 92C5-15713
._-t:\ ,,, ....
,,,, ..." ....
'"'.~ ...
ENCLOSED AREA INDICATES
-;:. 6 LOCUS OF POSSIBLE
TRIGGERING POINTS.
F
V>
'::;
;
'"wg 10
~ 8
,
w
5
u
"w
>
~
'""
w
>
i=
in
~
92CS-15719RI
Fig. 8 - DC holding current (positive or negative) vs. case 0.1

temperature. 0.001 4 6 80.01 4 6 8 0.1 4 6 8 I
POSITIVE OR NEGATIVE DC GATE-TRIGGER AMPERES(IGT)
92CS-15715RI
Fig. 9- Gate trigger characteristics and limiting conditions for

determination of permissible gate trigger pulses.
NOTE, For incandescent lamp

loads which produce burnout cur-
rent surges with 12t values greater
than 2.5 ampere2 seconds. connect
RCA a IO-ohm resi stor of appropri ate

TRIAC FOR INDUCTIVE
LOADS CONNECT
power rating in series with the
POINTS AI AND BI load. This rating can be deter-
TO TERMINALS
A AND 8 RESPECT- mined as follows:
IVELY.
Power Rating of = IO(rms load current)2
r 81 92LM-1972R2
IO-ohm Resistor
o
-70 -GO -50 -40 -30 -20 -10 0 10 20 30 40
CASE TEMPERATURE {Tc)_OC
INCHES MILLIMETERS
SYMBOL NOTES
MIN . MAX. MIN. MAX.
1,0 . 190 .210 4.83 5.33
A .240 .260 6.10 6.60
I,b .017 .021 .44 .53
ID .335 .366 8.51 9.30
jDl .330 8.13 8.38
REFRENCE
POINT FOR CASE h .015 .035 .38 .89
~~~~~~T~:;T
i .028 .035 .71 .89
k .029 .045 .74 1.14
The temperature reference point specified should be used when
I .975 1.025 24.76 26.03
making temperature measurements. A lowmass temperature probe
Or thermocouple having wire no larger than AWG No. 16 should be P .100 2.54
attached at the temperature reference point.
Q 1
, 45 NOMINAL
3 50 NOMINAL
r'F;J-' SYMBOL
I
0
.,.
-
INCHES
'101
.AX
630
1235
.,.
MILLIMETERS
-
3D61
.AX
16.00
]1]7
NOTES
=
0,
E
F I
7"
87S
040
..,
755
OSS
18923
22.22
1.02
19177
2299
140
=
[} MOUNTING TAB I F, 170 115 431 171
(LEAD NO 2 BEHIND L 910 - 23.37 -
MOUNTING TAB) </>P 191 ]G' 7.493 7.747
4 DIMPLED </>P, 093 09\ 2.362 2.413
Sf ANDOFFS
., 048
998
061
1002
121
25.349
157
25.450 )
",w 687
048
689
Oil
17.45
1.219
1750
1320
)
</>P, NOTES,
I. 0.035 e.R.S., finish: electroless nickel plate
"t-n t-~".." '

2. Recommended hole size for printed-circuit board is 0.070 in.
(1.78 mm) dia.
1
MOUNTING 3. Measured at bottom of heat radiator
TABS
(NOH2l ..The specified temperature-reference point should be used when
POIN r FOR CASE making temperature measurements. A low--mass temperature probe
TEMPERA TURE Or thermocouple having wire no larger than AWG No. 26 should be
MEASUREMEtH& attached at the temperature reference point.
TERMINAL CONNECTIONS
For Types 2N5754, 2N5755, 2N5756, 2N5657

Lead No.1 - Main terminal 1 Lead No.1 - Main terminal
Lead No.2 - Gate Lead No.2 - Gate
Case, Lead No.3 - Main terminal 2 Heat Rad., Lead No.3 - Main terminal 2
[]Qm5LJ1] Thyristors
Solid State T2300 T2302 T2310 T2312
Division
Series
2.5-Ampere Sensitive-Gate
.ltDjI Silicon Triacs
~M""IN
For Low-Power Phase-Control and Load-Switching Applications
~:~~INAL
1~ _~~=~l~
_GATE
For Low-Voltage Operation - T2300A, T2302A, T2310A, T2312A
I
(40525, 40528, 40531, 40534)*
For 120-V Line Operation - T2300B, T2302B, T2310B, T2312B
(40526, 40529, 40532, 40535)*
For 240-V Line Operation - T2300D, T2302D, T2310D, T2312D
(40527, 40530, 40533, 40536)*
-Numbers in parentheses (e.g. 40525) are former ReA type numbers.
T2310 Series
Features:
T2312 Serie.
Very High Gate Sensitivity 3-Lead Package for Printed Circuit
3 mA max. for T2300 and T2310 series Board Applications
10 mA max. for T2302 and T2312 series Shorted Emitter Design
RCA T2300, T2302-, T2310-, and T2312-series triacs are The T2300 series has rms on-state current ratings of 2.5
gate-controlled full-wave ac silicon switches. They are amperes at a case temperature of +60C while the T2302
designed to switch from a blocking state to a conducting series has the same ratings at a case temperature of + 70C.
state for either polarity of applied voltage with positive or
The repetitive peak off-state voltage rating for T2300A and
negative gate triggering.
T2302A is 100 volts; for T2300B and T2302B, 200 volts;
The T2302 series has higher dv/dt capability and higher gate and for T2300D and T2302D, 400 volts.
trigger current requirements than the T2300 series. The gate The T231 0 and T2312 series are the same as the T2300 and
sensitivity of these triacs permits the use of economical T2302 series, respectively, but have factory-attached heat-
transistorized and IC control circuits and enhances their use radiators and are intended for printed-circuit-board appli-
in low-power phase control and load-switching applications. cations.
MAXIMUM RATINGS, Absolute-Maximum Values:
For Operation with 50/50-Hz, SinuDsidal Supply VOltage and Resistive or Inductive Load
REPETITIVE PEAK OFF-STATE VOLTAGE. IGate Openl:

TJ = -4QOC to +900 C: T2300A, T2310A
T2300B. T231 OB
T2300D. T2310D
TJ = _40 0 C to +1000C: T2302A. T2312A
T2302B. T2312B
T2302D, T231 2D
RMS ON-STATE CURRENT (Conduction Angle = 3600):

TC = 600 c: T2300 series 2.5 A
TC = 70 C: T2302 series 2.5 A
TA = 250 C: T2300 series 0.35 A
T2302 series 0.40 A
For other conditions See Figs. 2, 3. 4 & 5
For heat-radiator types. See Figs_ 6 & 7
PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT:

For one full cycle of applied principal voltage
60 Hz sinusoidal. 25 A
50 Hz sinusoidal. 21 A
For more than on full cycle of applied voltage See Fig. 8
GATE POWER DISSIPATION+:
Peak (For 1 IJS max.l 10 W
Average: TC = 600 C 0.15 W

TA" 250 C 0.05 W
TEMPERATURE RANGEt:
+40to+150 DC
Storage
Operating (case): 40525,40526, 40527 -40 to +90 oC
40528,40529,40530 . -40to+100 0C
Heat-radiator types (From -400 C) Upper limits. See Figs. 6 & 7
LEAD TEMPERATURE:
During soldering, terminal temperature at a distance2' 1/16 in.
(1.58 mm) from the case for 10 s .
For either polarity of main terminal 2 voltage For information on the reference point of
(VMT2) with reference to main termin~1 1. temperature measurement see Dimensional
Outlines.
ELECTRICAL CHARACTERISTICS
At Maximum Ratings and at Indicated Case Temperature (TC) Unless Otherwise Specified
LIMITS
T2300 Series T2302 Series

SYMBOL UNITS
MIN. TYP. MAX. MIN. TYP. MAX
Peak Off-State Current:

Gate Open and VOROM = Max. rated value
At Tj = +1000 C .. __ .. __ . __ _ .. _ . IOROM - - - - 0.2 0.75 mA
At Tj = +900 C , . - 0.2 0.75 - - -
Maximum On-State Voltage:'
VTM
For iT = 10 A (peak) and TC = 250 C . - 1.7 2.2 - 1.7 2.2 V
DC Holding Current:'
Gate Open, Initial principal current = 150 mA (OCl, Vo =12
At TC = 250 C __ _ .. _ . _ _ . _ .. IHO - 2 5 - 6.5 15 mA
For other case temperatures . See Fig. 14 See Fig. 15
Critical Rate-of-Rise of Off-State Voltage:'
For Vo = VOROM, exponential voltage rise, dv/dt
and gate open V/IlS
At TC = +1000 C . - - - - 10 -
At TC = +900 C . . - 5 - - - -
DC Gate-Trigger Current:.t Mode VMT2 VG

For Vo = 12 V (DC). 1+ positive positive - 1 3 - 3.5 10
RL = 30 n, and 111- negative negative - 1 3 - 3.5 10
TC = 250 C 1- positive negative - 2 3 - 7 10
111 + negative positive - 2 3 - 7 10
For other case temperatures . See Fig. 12 See Fig. 13
DC GateTrigger Voltage: . t
For Vo = 12 V (DC) and R L = 30 n
At TC = 250 C . - 11 12 2 - 11 12.2
'I = o,r'l~
For other case temperatures . .
For vO = VOROM and RL = 125 n
At TC = 1000 C .
At TC = +900 C ......................
o~~ >~
Thermal Resistance, Junction-to-Case:
SteadyState . B.5 (max.) B.5 (max.)
(T2300 series) (T2302 series)
QUADRANT
No.1
MAIN TERMINAL 2
POSITIVE
-ON
STATE
IH
,,
+VDROM
OFF STATE
QUADRANT
No. III
MAIN TERMINAL 2 ON
NEGATIVE STATE
CURRENT
LOAD"
WAVEFORM
RESISTIVE
RATING APPLIES FOR ALL
ANGLES.
TEMPERATURE
SINUSOIDAL
OR INDUCTIVE
CONDUCTION
IS MEASURED ON BASE AT
rl~
I ~
9ml
RATINGS APPLY FOR ALL
'DO
aUCTION CON ANGLES
FOR

DEVICE
ON I/IS"-THICK
Wfh,-r
SOLDERED
COPPER
POINT MIDWAY BETWEEN LEADS. 0 ,aO'\J360" '"

Z
T2302 HEAT
ArURE
SINK.
MEASURED
TEMPER-
ON
w
'"51' 'DO
, T2302
CONDUCTION ANGLE ..
'"..."u 90
'l'1
Series HEAT
CASE CAP.
LEAD
SINK
LENGTH
1/4"
= I"
FROM
w_ 91 +- 8m
Series
O'I4'
-' u 90 ~ ~ 80 MOUNTING
"'I- ~~
~~ ;0",
..
j ~
~ aD
Ow
j ~ 70
"w
T230
Series
FOR
ON
DEVICE
I/IS
M
THICK
SOLDERED
COPPER
,.=> '""-,. "1-

,. HEAT SINK. TEMPER-
,. w T2300
=> ATURE MEASURED ON
,... ,
70 Series 60 HEAT SINK 114
M
FROM
~~
,.
X
itT'NG
CASE
LEAD
CAP.
LENGTH = ,M
60
0.5 1.5 2.5 3
RMS ON-STATE CURRENT [ITlrms )]-A
20
o 0.2 0.4 0.6 0.8 1.0
RMS ON-STATE CURRENT I!T (rmsl] - A

0.5 1.0 1.5 2.0 25
0.5 I 1.5 2 25
RMS ON-STATE CURRENT [IT(rmsl}-A
RMS ON-STATE CURRENT [IT( rms)]-A
SUPPLY FREQUENCY" 50/60 Hz
w ~g~D ~~:~~~~I~~URRENT [IT(RMSl]" 2.5A CURRENT WAVEFORM SINUSOIDAL : .... ::

LOAD RESISTIVE OR INDUCTIVE
CASE TEMPERATURE (TC)" 70C
CONDUCTION ANGLE 3600
~ .:
z
0
W'
~'i
0-00
~; 20
25
1\
1\
GA~E CONTROL MAY BE LOST DURING AND -
IMMEDIATELY FOLLOWING SURGE CURRENT
INTERVAL.
OVERLOAD MAY NOT BE REPEATED UNTIL
JUNCTION TEMPERATURE HAS RETURNED TO
-
'"w;o
4 :E:-': .._ ::~: -_: ~~
~" ....:::,:,T.:,:,:::I"'!"~I:
wo- STEADY-STATE RATED VALUE. ~ I 3
:;to ." :- .~~,:
"- ""
o.z
~~ 15 ......... "'- o
0'"
z'" wi" ~F .::'.::: -;;,"1/ : :.:c::
.. :~~ .. -
-'> .....
~u I .....
-':L: //
'"
~
10
, ~Hz
~~
w!!!
>0
2
131~ ....'~~""'"
.:: :.
'" 50 Hz
<I
FI
~ 5
I ._---z? ::: ,t:~:-
0 .,. :::1: . ~~:
2 4
2 4
2 4

CHARACTERISTICS APPLY FOR ALL

TRIGGERING MODES.
PRINCIPAL VOLTAGE "12V (DC)
LOAD.:: 30 OHMS. RESISTIVE
0.5 I 1.5 2
INSTANTANEOUS PRINCIPAL
VOLTAGE (vT)-V
CHARACTERISTICS APPLY FOR INDICATED TRIGGERING
MODES.
PRINCIPAL VOLTAGE aI2V(DCl
u u
LOAD" 30 OHMS. RESISTIVE 0
0
E E
I I
'"
o! 20 1; 40
H
I-
I-
~
cr ~
cr cr 30
a B
~ cr
w
''~
"" g 20
<r
.:, !
!< Ii 10
'" '"
o
- 40 -30 -20 -10 0 10 20 30 -20 -to 0
CASE TEMPERATURE lTc)_OC 92LS-1978RI
CASE TEMPERATURE (T C) - C 92LS-1974RI
Fig. 12 - DC gatetrigger current characteristics for T2300 and Fig. 13 - DC gate-trigger current characteristics for T2302 and
T2310 series. T2312 series.
INITIAL PRINCIPAL CURRENT::150mA E ...~~_ ..: ~=
50 ~::~ :::: =._. :~~F:.:_.- ..- . ... ..
......... - .... <.. ,''', ... ;:~ E
I
... . -'-1:' ", H
:z:
I-
.- _. .. . ;;-:= .. I-
Z
Z w
~ 30 ~~ : ~
a _.. ~ .~' a
C)
z -...;::
__ -
_...--: _.
'i'j"
z
3 20 . __. '4 __
o .... ... ... .- __.. .._. ~

:o =~s~_. -. ..... _.- .. u
~,~~~~~:,~~~,
0
10
10
..
o tltHH~o:::~ - :r;
-40 -30 -20 -10 0 10 20 30
CASE TEMPERATURE <Tcl-oC 92LS-1975Rl -30 -20 -10 0 10 20 30
Fig. 14 - DC holding current characteristics for either direction CASE TEMPERATURE (T C I _C 9ZLS-1976RI
of principal current for T2300 and T2310 series. Fig. 15 - DC holding current characteristics for either direction
of prinicpal current for T2302 and 72312 series.
13
s SHADED AREA INDICATES LOCUS OF POSSI SLE TRIGGERING POINTS AT t: : j 11: 1 ,
~
gTll
VARIOUS TEMPERATURES FOR ALL OPERAT ING MOOES.
1 lit
I- 4
l::: :1; : ; !
It~tii1t:Uj;i.L~:: .. II
:::'"
w
'"
MAXIMUM
INDICATED
GATE TRIGGER
JUNCTION
VOLTAGE
TEMPERATURE
FOR !
IT;1. 1 I l I
t It- -
~:'-t rtt
. -:-:--;-
<l
I-
-' T; ~-40 C I +.,-1 l.
0
;> ,t, + " r-t- .. t I~
3 0 C t- I-l-J-.- -+- ~ -
cr
w ~ it:;:::-
---+ ++
7+r~' .
t
''"" t-'-
"'
I-
I
r ~+25 C ;i :~ ~1
IT
w
l-
<l 2
.. T
; I~ t
'"
w
;> .. I
>=
<l
'"
w
z I
cr I
. 1 ~
0
w ~-;- oC
.. f;~ ~ t
! JTj ~ 40 C
MAXIMUM GATE TRIGGER
it
;> +25 C +~ CURRENT FOR INDICATED
>= JUNCTION TEMPERATURE (TJ)
iij
*tcii
Is
0 MAXIMUM ;twH'CH ~~
UNIT WILL TRIGGER FOR Tj :: +90C
"- 17~mqm
0 2 4 6 10
POSITIVE OR NEGATIVE GATE-TRIGGER CURRENT (tGTl - mA(OC)
Fig. 16 - Gate characteristics for T2300 and T2310 series.

MAXIMUM GATE TRIGGER VOLTAGE FOR
INDICATED JUNCTION TEMPERATURE (Tj)
Tj' 40 C

CURRENT FOR INDICATED
JUNCTION TEMPERATURE IT;)
MAXIMUM VOLTAGE AT WHICH
NO UNIT WILL TRIGGER FOR
T+IOOC
15 20 25 30
GATE-TRIGGERING CURRENT IIGT) - mA (DC)
RFI FILTER
r-----~l
I LF
*RCA I
TRIAC I
,
(SEE I CF
TABLE 1 I
D I
FOR INDUCTIVE LOADS

CONNECT POINTS C' AND
c1
$
D' TO TERMINALS C AND
1.2K 2W I~/~~
D, RESPECTIVELY
" FOR PHOTOCELL CONTROL

CONNECT POINTS A' AND B'
TO TERMINALS
,RESPECTIVELY
A AND n,
,1 200V
FOR
0.1 eF
400V
FOP
B PHOTOCELL 0
120V 240V
INPUT INPUT
NOTE: For incandescent lamp loads which produce burnout

current surges with 12t values greater than 2.5 am-
pere2 seconds, connect a 10-ohm resistor of appro-
priate wattage rating in series with the load. The
appropriate wattage rating can be determined as follows:
AC RFI FILTER RCA

INPUT C1 C2 R1 R2 R3 LF * CF* TYPES
VOLTAGE (typ.) hyp.)
120V O.lJJF O.lJJF 100Kn 2.2Kn 15Kn 100JJH O.lJJF TZlOOB ,T231 OB
60Hz 200V 100V 1/2W 1/2W 1/2W 200V T2302B ,TZ312B
240V O.lJJF O.lJJF 250Kn 3.3Kn 15Kn 200JJH O.lJJF Z3000 ,T2302D
50Hz 400V 100V lW 1/2W 1/2W 400V Z31OD,T2312D
INCHES MILLIMETERS
SYMBOL NOTES
MIN. MAX. MIN. MAX.
00 0.190 0.210 4.83 5.33

A 0.240 0.260 6.10 6.60
ob 0.017 0.021 0.44 0.53
00 0.335 0.366 8.51 9.30
001 0.330 8.13 8.38
h 0.015 0.035 0.38 0.89
i 0.028 0.035 0.71 0.89
k 0.029 0.045 0.74 1.14
I 0.975 1.025 24.76 26.03
P 0.100 2.54
0 1
a 45" NOMINAL
P 50 NOMINAL
"The temperature reference point specified should be used when

making temperature measurements. A low-mass temperature probe
or thermocouple having wire no larger than AWG No. 16
should be attached at the temperature reference point.
r "1' J SYMBOL MIN

INCHES
MAX
MILLIMETERS
MIN MAX. NOTES
U
A 0630 - 16.00
0 1.205 1.235 30.61 31.37
0, 0.775 0.785 19.69 19.93
E 0.875 0.905 22.22 22.99
MOUNTING
= TAB
F
F,
0.040
0.160
0.055
0.195
1.02
4.06
1.40
4.94
(LEAD NO.2 BEHIND L 0.920 - 2337 -
MOUNTING TAB)
0' 0.295 0.305 7.493 7.747
4 DIMPLED
STANDOFFS
",
N
0.093
0.048
0.095
0,062
2.362
12'
2.413
1.57
N, 0.998 1.002 25349 25.450 3
N, 0687 0.689 1745 17,50 3
W 0.048 0.052 1.219 1.320
<PP NOTES:
1nJ,m~,'
1. 0.035 C.R.s., finish: electroless nickel plote
2. Recommended hole size for printed-circuit board
is 0 OlD in. (1.78 mm) diD.
The specified temperature-reference point should be used when

POINT FOR CASE
TEMPERA TURE making temperature measurements. A low-mass temperature
MEASUREMENT
probe or thermocouple having wire no larger than AWG No. 26
should be attached at the temperature reference point.
Lead No.1 - Main terminal 1 Lead No.1 - Main terminal 1

Lead No.2 - Gate Lead No.2 - Gate
Case, Lead No.3 - Main terminal 2 Heat Rad., Lead No.3 - Main terminal 2
[J\l(]5LJD
Solid State T2311
Division
Series
2.5-Ampere Sensitive - Gate

Silicon Triacs
For Low-Voltage Operation - T2301A, T2311A (40766,40767)*

For 120-V Line Operation - T2301 B, T2311B (40691,40761)*
For 240-V Line Operation - T2301 0, T2311 0 (40692.40762) *
-Numbers in parentheses (e.9. 40766) are former ReA type numbers.
,f '\ Features:
Very High Gate Sensitivity -4 mA
Shorted Emitter Design
Heat-Radiator Package for Printed Circuit Board Applications
Small Size - Suitable for Remote Switching Applications
RCA T2301- and T2311-series triacs are gate-controlled With the exception of the characteristics listed below, data
full-wave ac switches_ These devices are designed to switch shown for the T2300 series in bulletin File No. 470 are
from an off-state to an on-state for either polarity of applied applicable to the T2301 series.
voltage with positive or negative gate triggering voltages.
The high gate sensitivity of these triacs permits the use of

Characteristic Limits
economical transistorized or integrated control circuits and Units
enhances their use in low-power phase control and load- DC ~Qte-Trigger Current, IGT Mode VMT2 vc; Min. Typ. Max.
switching applications_ For vo . 12 V roC), I' positive positive - I 4

Rl "30L. and III" negtllive negative - 1 4 mA
The T2301-series triacs are supplied in a compact package TC 15' C

1- positive negative - 1 4
III ~ negative POSitive - 1 4
(similar to JEDEC TO-5) and have an RMS on-state current
rating of 2.5 A and repetitive peak off-state voltage ratings of
Data shown for the T2310 series in bulletin File No. 470 are
100, 200. and 400 va Its.
applicable to the T2311 series.
The T2311-series triacs are the same as the T2301-series
triacs. but have factory-attached heat-radiators and are For data on additional ReA sensitive-gate triaes,
intended for printed-circuit board applications.
refer to bulletin File No. 470.
Thyristors
[IlCIDLJD
Solid State T2304 T2305
Division
Series
400-Hz, 0.5-A
Sensitive-Gate Silicon Triacs
For Control-Systems Application in Airborne and
Ground-Support Type Equipment
For 115-V Line Operation - T2304B, T2305B (40769,40771)**
For 208-V Line Operation - T2304D, T2305D (40770,40772)**
Features:
High Gate Sensitivity, IGT = 10/40 mA max.
di/dt Capability = 100 A/J.ls
Commutating dv/dt Capability Characterized at 400 Hz
Shorted-Emitter Design
ReA T2304- and T2305-series triacs are gate-controlled and 208 V RMS sine wave and repetitive peak off-stage
full-wave silicon ac switches. They are designed to switch voltages of 200 V and 400 V.
from an off-state to an onstate for either polarity of applied
voltage with positive or negative gate triggering voltages. The high gate sensitivity of these triacs permits the use of
economical transistorized or integrated control circuits and
These triacs are intended for operation up to 400 Hz with enhances their use in low-power phase control and load-
resistive or inductive loads and nominal line voltages of 115 switching applications.
MAXJMUM RATINGS, Absolute-Maximum Values:

For Operation with Sinusoidal Supply Voltage at Frequencies lip to 400 Hz and with Resistive or Inductive Load.
T2304B T2304D
T23051l T2305D
REPETITIVE PEAK OFF-STATE VOLTAGE:'
Gate open, TJ = -50 to 1000C VDRLJM 200 400 V
RMS ON-STATE CURRENT (Conduction angle = 3600): IT(RMS)
Case temperalure (TC) = 900C . 0.5 A
Ambient temperature (T A) = 250C, without heat sink ............... 0.4 A
For other conditions . See Figs. 3 & 4
PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT: ITSM
For one cycle of applied principal voltage
400 Hz (sinusoidal) . 50 A
60 Hz (sinusoidal) .................................. 15 A
For more than one cycle of applied principal voltage See Fig. 5
RATE-OF-CHANGE OF ON-ST ATE CURRENT: di/dt
VDM = VDROM, IGT = 60 mA, tr = 0.1 "s (See Fig. /4) 100 AIl'S
IGTM
PFF~~IGI'~1~},R1G8-~:figURMNT. . . A
PEAK (For j I'S max., (See Fig. /0) PGM 10 W
AVERAGE (At TC = 600C) PG(AV) 0.15 W
(At T A = 25C, without heat sink) PG(AV) 0.05 W
TEMPERATURE RANGE:
Storage .... Tstg -50 to 150 c
Operating (Case) TC -50 to 100 c
LEADTEMPERATURE (During soldering):
At distances~ 1/16 in. (1.58 mm) from the case for 10 s max . TL 225 c
* For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1.
For either polarity of gate voltage (VG) with reference to main terminal I.
...Fur temperature measurement reference point, see Dimensional Outline.
At Maximum Ratings and at Indicated Case Temperature (TC) Unless Otherwise Specified
LIMITS
CHARACTERISTIC SYMBOL UNITS
Min. Typ. Max. Min. Tvo. Max.

Peak Off-State Current:'
IDROM
Gate open, TJ = 100oC, VOROM = Max. rated value 0.2 0.75 0.2 0.75 mA
Maximum OnState Voltage:'
VTM
For iT = 10 A (peak), Te = 25C .................. .... 1.7 2.2 1.7 2.2 V
Gate open, Initial principal current:::: 150 mA IDC). vo = 12 V.
TC = 250e ...................................... IHO 7 15 15 30 mA
For other case temperatures .... ; ................ -SeeFi .B&9-
Critical Rate-of-Rise of Commutation Voltage:'
For vD = VDROM, I(T(RMS) = 0.5 A, commutating
di/dt = 1.8 A/ms, gate unenergized, Te = 900e dv/dt 1 4 1 4 V/ps
(See Fig. 151
Critical Rate-ofRise of Off-Stage Voltage:'

For vD = VOROM, exponentail voltage rise. gate open, dv/dt
TC= l000C ........ ......... ...... . .. . ... .... 10 100 10 100 V/ps
DC Gate- Trigger Current:' Mode VMT2 VG
For Vo = 12 V (DC). l+ positive positive 3.5 10 5 25
RL =30 n III- negative negative IGT 3.5 10 5 25
mA
r
-I
Te = 25C positive negative 7 10 10 40
III+ negative positive 7 10 10 40
For other case temperatures ... .............. ...... See FillS. 11 & 12_
DC Gate- Trillller Voltage:.t
ForvD = 12 V (DC), RL = 30n, Te = 250C
For other case temperatures ........... . . . . . . . . .. . . VGT
11
-SeeFig.13-
2.2 I 11 I 22
V
ForvO=VOROM, RL = 125n, TC= 100C 0.15 0.15
Gate-Contro"ed Turn-On Time:
(Delay Time + Rise Timel
For vo = VOROM, IGT = 60 mA, tr = 0.1 /JS. tgt
iT = 10 A (peak), TC = 250C (See Fig. 16) I.B 2.5 1.8 2.5 ps
Thennaf Resistance, Junction-to-Case:
................... ......... - .... . ...... IIJ-C B.5 8.5 OC/W
, For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1.
t For either polarity of gate voltage (V G) with reference to main tenninal 1.

o 0.1 0.2 0.3 0.4 0.5 o 0.1 0.2 0.3 0.4 0.5
FULL CYCLE RMS ON-STATE CURRENT [In.M.1l -A F"ULL CYCLE RMS ON-STATE CURRENT [ITtRMS)] -A
9ZCS-17092 92CS-17093
@ TRIAC WITH HEAT RADIATOR SUPPLY FREQUENCY 60/400

LOAD: RESISTIVE
Hz
~:~~E~"i\~~TT HitlRC~~~~6 ...~ RMS ON-STATE CURRENT[ITIRMSI]aO.5A

TRIAC WITHOUT HEAT RADIATOR CASE TEMPERATURE (Te) OOC
CURRENT WAVEFORM, SINUSOIDAL ~
LOAD, RESiSTIVE OR INDUCTIVE z
o
CONDUCTION ANGLE: 360-
~,
"'"
t:'2:40
~~
......
er!::'
a:~
,z 30
z
0"
Z
..~
-:>
~o 20
~ 10
20 4 6 8 10 4 6 8 4 6 8
o ~ ~ ~ M ~ M 102 103
SURGE CURRENT DURATION - FULL CYCLES
FULL CYCLE RMS ON-STATE CURRENT [IT(RMS)] -A 92C5-11094
92CS-17095
Fig. 4 - Maximum allowable ambient temperature vs. on-state

current for the package/mounting options of these triaes.
CASE TEMPERATURE {Tel'" 25C
r,,~~:::iCiAiSiETEiMiPiEiRiAiTUiREi(iTIC)i'i25ifiCi~1111III!
-k.~0.s f J
:='t-
~~
t:! ~
....
~~ 04
:>0
~
~~ 0.3 :t:tt:t:
~.,
!<~
~~O.2
z-
o
0.809 I I.l 1.2 o I 2. 3

ON - STATE VOLTAGE ( VT) - V INSTANTANEOUS ON-STATE VOLTAGE IvTl-V
(POSITIVE OR NEGATIVE) (POSITIVE OR NEGATIVE)
100.
6 TRIGGERING MODES: All
4 LOCUS OF POSSIBLE
TRIGGERING POINTS.
UPPER U Mil OF PERMISSIBLE

AVERAGE (DC) GATE POWER
DISSIPATION AT RATED
CONDITION.
0.1
0.001 2 4 680.01 2 4 680.1 -50 -40 -30 -20 -10 0 10 20 30 40 92C5-17101
DC GATE TRIGGER CURRENT (IGT)-A CASE TEMPERATURE (T c) - C
(POSITIVE OR NEGATIVE)
Fig. 11 - DC gate-trigger current VS. case temperature for T2304 series.
Vo
oJ--- ------ --------

I
/--- OlIO'
I
I
1
I
I
I CO~UTATING
I dv/dt
I
I
Fig. 15 - Relationship between supply voltage and principal current

(inductive load) showing reference points for definition of
commutating voltage fdv/dtJ.
:t
1
Vo I I
I I
o_LL I
:_L __
I I
_r - --..,
I
I SNUBBER NETWORK
500 n ITO BE USED
I I I I 1/2 W I FOR INDUCTIVE
I I I I I ~g~~SU~:T~~EN
I I 1
-'
I I VOLTAGE (dv/dt)
I J CHARACTERISTIC
T : I 1'90% POINT I
I
liS EXCEEDED
I
In. I I I '1'"'i0.I,...F1
o_L_L __ 1-+---- --L
fJ200V1
J
~ '0 --i--l---"
I I I
1---'" --j
f~:
VGT I
NOTE: For incandescent lamp loads which produce burnout cur
rent surges with 12t values greater than 2.5 ampere2 seconds, con
o_L -------- ,.....10,"0 POINT

-
92CS-13366R2
nect a 10 - ohm resistor of appropriate
load. This rating can be determined
power rating in series with the
as follows:
Power Rating of _ 2
10-ohm Resistor - 10 (rms load current)
Fig. 16 - Relationship between off-state voltage, onstate current,

and gatetrigger voltage showing reference points for
definition of turn-on time (tgt).
INCHES MILLIMETERS
SYMBOL NOTES
MIN. MAX. MIN. MAX.
o .190 .210 4.83 5.33
A .240 .260 6.10 6.60
b .017 .021 .44 .53
O .335 .366 8.51 9.30
Ol .330 8.13 8.38
REFRENCE
POrH FOR CASE h .015 .035 .38 .89
~~'f;~~~T~::T
i .028 .035 .71 .89
k .029 .045 .74 1.14
~ The temperature reference point specified should be used v.t1en I .975 1.025 24.76 26.03
making temperature measurements. A low-mass temperature probe
or thermocouple having wire no larger than AWG No. 16 should be P .100 2.54
attached at the temperature reference point.
Q 1
a. 450 NOMINAL
f3 500 NOMINAL
Lead No.1 - Main terminal 1

Lead No.2 - Gate
Case, Lead No.3 - Main terminal 2
On special request, these triacs are also available with a

factoryattached heat-radiator intended for printedcircuit
board applications.
OOCD5LJ1] T2306 T2806
Thyristors
T4107 T6406
Solid State T2316 T2616 T4116 T6407
Division T2606 T2716 T4117 T6416
T2706 T4106 T4706 T6417
Series
These triacs are gate-controlled
are intended for ac load-control applications such as heating
controls (proportional or on-off);
full-wave ac switches. They
lamp switching, motor

2.5-40-A, 100-600-V SILICON
switching, and a wide variety of power-control applications.
TRIACS DESIGNED FOR USE
The RCA CA3058, CA3059, and CA3079 are monolithic
silicon IC zero-voltage switches designed for direct operation
from the ac line. They can drive the triac gate directly and
WITH IC ZERO-VOLTAGE
provide the gating signal at zero voltage crossings for
minimum radio-frequency interference.
SWITCHES AS
These triacs have gate characteristics which assure that the
zero-voltage switch can supply sufficient
trigger them over the operating-temperature range from
drive current to TRIGGERING CIRCUITS
_40C to +85C. Ratings within this group of triacs range
from 2.5 to 40 amperes rms on-state current, with repetitive For Power-Control and Switching Applications
off-state voltages available from 100 to 600 volts; and they
employ a wide variety of packages. at Frequencies of 50 to 60 Hz
RATINGS AND CHARACTERISTICS
For
Type
No.
Former
RCA
Rep. Peak
OffState
Voltage
RMS On-State
Current
'T(RMS)
Typ. DC
Holding
Current at
Max. DC Gate Trigger Current
and Voltage at 25C
1+ 111+ Package
I Additional
Data.
Refer to
Type VDROM at Case Temp. 250C, IHO I IGT VGT IGT VGT Bulletin
No. (VI (A) (OCI (mAl I (mAl (V) (mAl (V) File No.*
T2316A 40693 100 2.5 70 6 I 45 1.5 45 1.5 Mod. TO-5 on 414
T2316B 40694 200 2.5 70 6

! 45 1.5 45 1.5
Heat Radiator
" 414
T2316D 40695 400 25 70 6 45 15 45 1.5 " 414
T2306A 40696 100 25 70 6 45
Ir 15 45 1.5
1.5
Mod. TO-5 414
T2306B 40697
__ .0 _____
---- - -t --------------- ---- --------

200 ,2 5 70 6 45
-----
15 45
_.- " 414
T2306D 40698 400

I, 25 70 6 45 15 45 1.5 Mod. TO-5 414 I
T6406B 40699 200 40 70 25 45 1.5 45 1.5 Press-fit 593 I
T6406D 40700 400 40 70 25 45 1.5 45 1.5 " 593
T6406M
T6416B
I
I
40701
40702
600
200
,I
40
40
70
65
25
25
45
45
I 1.5
1.5
45
45
1.5
1.5
"
Stud
593
593
I
T6416D 140703 400 I 40 65 25 45 1.5 45 1.5 Stud 593
T64i6M 140704 600 I 40 65 25 45 1.5 45 1.5 " 593
T6407B 40705 200 i! 30 65 25 45 1.5 45 I
, 1.5 Press-fit 459
T6407D I 40706 400 I 30 65 25 45 1.5 45
I
1.5 " 459
T6417B 40707 200 30 60 25 45 1.5 45
i 1.5 Stud 459
T6417D 400 30 60 25 45 1.5 45 1.5 459

T6407M
140708
I 40709 600 30 65 25 45
;
1.5 45
I 1.5
Stud
Press-fit 459
T6417M I 40710 600 30 60 25 45 i 1.5 45 1.5 Stud 459
T4106B 200 15 80 20 45 1.5 45 1.5 Press-fit 458
i T4106D
\40711
40712 I 400 i 15 80 20 45 I 1.5 45 I 1.5 " 458
For
Rep. Peak RMS On-State Typ. DC Max. DC Gate Trigger Current Additionel
Type Former Off-State Current Holding and Volta! at 250c4 Data,
No. RCA Voltage IT(RMS) Current at 1+ 111+ Package Refer to
Type VDROM at Case Tamp. 25OC,IHO IGT VGT IGT VGT Bulletin
No. (V) (A) (OCI (mA) (mA) (V) (mA) IV) File No.-
T4116B 40713 200 15 80 20 45 1.5 45 1.5 Stud 458

T4116D 40714 400 15 80 20 45 1.5 45 1.5 .. 458
T4706B 40715 200 15 70 15 45 1.5 45 1.5 TO-66 300
T4706D 40716 400 15 70 15 45 1.5 45 1.5 .. 300
T4107B 40717 200 10 85 15 45 1.5 45 1.5 Pressfit 457
T4107D 40718 400 10 85 15 45 1.5 45 1.5 Press~fit 457

T4117B 40719 200 10 85 15 45 1.5 45 1.5 Stud 457
T4117D 40720 400 10 85 15 45 1.5 45 1.5 .. 457
T2806B 40721 200 8 80 15 45 1.5 45 1.5 364
T2806D 40722 400 8 80 15 45 1.5 45 1.5 ..
Plastic
364
T2706B 40727 200 6 75 15 45 1.5 45 1.5 TQ-66 351
T2706D 40728 400 6 75 15 45 1.5 45 1.5 TO-66 351

T2716B 40729 200 6 75 15 45 1.5 45 1.5 TO-56 with 351
Heat Radiator
T2716D 40730 400 6 75 15 45 1.5 45 1.5

I
.. 351
& A triac driven directly from the output terminal of the CA3058. CA3059. and CA3079 should be characterized for operation in the 1+ or 111+
triggering modes, i.e., with positive gate current (current flows into the gate for both polarities of the applied ae voltage).
. Except for gate characteristics, data in these bulletins also apply to the types listed in this chart.
Technical information on RCA-CA3058. CA3059. and CA3079 is

contained in bulletin File No. 490.
For detailed application information, see Application Note leAN

6182, "Features and Application of RCA IntegratedCircuit Zero
Voltage Switches ".
OOm5LJD
Solid State T2500B
Division
T2500D
Three-Lead Plastic Types for

Power-Control and Power-Switching Applications
For 120-V Line Operation T2500B (41014)t

For 240-V Line Operation T2500D (41015)t
Features:
60-A Peak Surge Full-Cycle Current Ratings
Shorted Emitter, Center-Gate Design
Low Switchi ng Losses
Low Thermal Resistance
PackageDesign Facilitates Mounting on a Printed-Circuit Board
Types T2500B and T2500D* are gatecontrolled full-wave negative gate triggering voltages. They have an onstate cur
silicon triacs utilizing a plastic case with three leads to rent rating of 6 amperes at a Te of sooe and repetitive off-
facilitate mounting on printedcircuit boards. They are state voltage ratings of 200 volts and 400 volts, respectively.
intended for the control of ac loads in such applications as
The unique plastic package design provides not only ease of
motor controls, heating controls, relay replacement, solenoid
mounting but also low terminal impedance, which allows
drivers, static switching, and powerswitching systems.
operation at high case temperatures and permits reduced
These devices are designed to switch from an off-state to an heatsink size.
on-state for either polarity of applied voltage with positive or Formerly RCA Dev.Nos.TA8504 and TA8505.
MAXIMUM RATINGS, AbsoJuteMaximum Values:
For Operation with Sinusoidal Supply Voltage at Frequencies up to 50160 Hz and with Resistive or Inductive Load,
REPETITIVE PEAK OFF-STATEVOLTAGE: T2500B T2500D
Gateopen,TJ = -65 to 100C VDROM 200 400 V
RMSONSTATECURRENT IConductionangle= 360)
Case temperature ITI R~.1Sl
TC=800C 6---- A
For other conditions -- See Fig. 3 ---
PEAK SURGEINON-REPETITlVE)ON-STATECURRENT:
___ 60 _
60 Hz (sinusoidal).
___ 50 _
50 Hz (sinusoidal)
For more than one cycle of applied principal voltage -- See Fig. 4 ---
PEAK GATETRIGGERCURRENT:
For 10 IJ.smax; see Fig. 10
GATE POWERDISSIPATION:
Peak (For 1 JjS max.,lGTM -:;4 A; see Fig. 10)
PGM 16 _
AVERAGE PGIAV)--- 02 _
TEMPERATURERANGE:'
Storage Tstg -65 to 150 __
Operating (Casel TC -65 to 100 __
TERMINAL TEMPERATUREIDuring solderingl:
For 10 s max. (terminals and case)
For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1
For either polarity of gate voltage (V G) with reference to main terminal 1.
.. For temperature measurement reference poif't, se~ Dimensional Outline.
ELECTRICAL CHARACTERISTICS at Maximum Ratings unless otherwise specified, and at
indicated Case Temperatll'e (T cl
LIMITS
T2500B T2500D UNITS
CHARACTERISTIC SYMBOL
MIN. TYP. MAX. MIN. TYP. MAX.
Peak Off-State Current:*
Gate Open, VOROM = Max. rated value IOROM - 0.1 2 - 0.1 2 mA
At TJ = 100C .............................
Maximum On-State Voltage:* vTM - 1.7 2 - 1.7 2 V
For iT = 30 A (peak) and TC = 25 C ...............
DC Holding Current:*
Gate Open
Initial principal current = 150 mA (de) IHO mA
At TC = 25C ........................... - 15 30 - 15 30
For other case temperatures ................... See Fig. 8.
Critical Rate of Rise of Commutation Voltage:*

For vO = VOROM. IT(RMS) = 6 A. Commutating dv!dt V!/-,s
dildt = 3.2 Alms. and gate unenergized
At TC = BOoC .............................. 4 10 - 4 10 -
Critical Rate of Rise of Off-State Voltage:*
For vd = VDROM exponential voltage rise, and gate open
At T C = 10006 ........................... dv!dt 100 300 - 75 250 - V!/-,s
For other case temperatures .................... See Fig.9
DC Gate Trigger Current:* t

For VD = 12V (de), RL = 12 \)
T C = 25C, and specified triggering mode:
r+ Mode (VMT2 positive, VG positive) ............... - 10 25 - 10 25
m- Mode (VMT2 negative, VG negative) ............ IGT - 15 25 - 15 25 mA
I - Mode (VMT2 positive, VG negative) .............. - 20 60 -

20 60
m+ Mode (VMT2 negative, VG positive) ............ - 30 60 -
30 60
For other case temperatures ....................... - See Figs. 12 and 13_
DC Gate Trigger Voltage:* t

For VD = 12V (de) and RL = 1211
At TC = 25C ............................ - 1.25 2.5 - 1.25 2.5
VGT V
F or other case temperatures ..................... See Fig. 14.
For VD = VDROM and RL = 125 \)
At TC = 100C ............................ 0.2 - - 0.2 - -
Gate-Controlled Turn-On Time (Oelav Time + Rise Time):

ForvO = VOROM,IGT = 160 mA, rise 1.6 1.6
tgt - 2.5 - 2.5 /-,s
time = 0.1 IJS, and iT = lOA (peak)
At TC = 250C (See Fig.15.l ...................
Thermal Resistance:
J unction-to-Case ............................. ROJC - - 2.7 - - 2.7 C!W
J uncti onto-Ambi ent .................... , ...... ROJA - - 60 - - 60 C!W
*FOl either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1.
tFor either polarity of gate voltage (VG) with reference to main terminal 1.
.Variants of these devices having dV/dt characteristics selected specifically for inductive loads are available on
special order; for additional information, contact your ReA Representative or your ReA Distributor.
CONDUCTION ANGLE: 360 o 2 4 6 8 10 12 14
CASE TEMPERATURE: MEASURED AS
SHOWN ON DIMENSIONAL OUTLINE FULL-CYCLE RMS ON-STATE CURRENT [I T{RMSJ-A
92C5-20960
SUPPLY FREQuENCY: 50/60 Hz SINE WAVE

LOAD: RESISTIVE
CASE TEMPERATURE (TCl : 800 C
-'"
w 1100
RMS ON-STATE CURRENT [ITIRMSlr ~6 A
>-
f:........~ LTE CUTROL I
DURING AND IMMEDIATELY
MAy B~ Lbs+
~ ~ 80 FOLLOWING SURGE CURRENT
w ... INTERVAL
<rZ CNERLOAD MAY NOT BE RE-
,W
z<r PEATED UNTIL JUNCTION
TEMPERATURE HAS RETURNED
~ ~ 60
_u TO STEADY-STATE
RATED VALUE.
2 4 6 8 to 12
.,w ....w
<r '" ~~Iy,
RMS ON-STATE CURRENT [IT(RMS~-A ~ ~40
92C5-20961
~ z _50",~ '" '"
~O
~
20
0
-- :-
2 4 8 2 4
8 2 4
8
Fig. 4-Peak surge on-state current vs. surge current duration.

tgt: td + t.
I
I I
Vo i I
o-LL---J---- I
I
1
:1.
1
I I
t: I ....
90% POINT
ITM I 1 I
o-l~--- I-l---
I
I
j--'d+t-- t,
~t ----i
!
I
I
I CO~UT ATING
-.--t-7 I
I dv/dt VGT :
I
I 0- L I :.--10% POINT
--------
Fig. 6-0scillascape display for measurement of gate--contralled
turn-on time rtgrl.
o 0.5 1.5 2 2.5
POSITIVE OR NEGATIVE INSTANTANEOUS ON-STATE VOLTAGE (vT)-V
92CS-15021RI
2
0.1
4 6 80.01 6 80.1 6 81.0
POSITIVE OR NEGATIVE DC GATE-TRIGGER CURRENT (lGT)-A
92SS-3785R2
RFI FILTER
r------l
I LF
-RCA I
TRIAC I
(SEE I CF
TABLE) I
o I
1.$: 2W R, Cf' ~?~i;~~!~~TL~SO~O~~~

112 W 0, RESPECTIVELY

TO TERMINALS A AND B,
RESPECTIVELY Cs ,1
B' PHOTOCELL 0
120v 240V
" 0, 0, ", ",

INPUT
VOLTAGt
", ~'~ ""
(,~". (,~". TVPE$
~", ~" ~~~:
,~" 0.1 ~f lOOK" 11KlI 15K" l00~H
0,
~"
~f
,-
"'"
~"' ~~:o"""
1 ~F :1&1"," J.JKll
,W ,W
15",U
~." ~~~:
,~
,~" 0,~" 0.1
~"'
~f
,~"
:100"'11 JJKlI
~f
, W
'5",U
,W ~." ~~:,~
Fig. 11 - Typical phase-control circuit for lamp dimming, heat
controls, and universal motor speed controls.
Fig. 12-DC gate-trigger current ((or ,+ and 11/- triggering Fig. 13-DC gate-trigger current ((or /- and ///+ triggering
modes) vs. case temperature. modes) vs. temperature.
-'>
;il
,,-;:.
<r c>
~>
z~
0:0:
~~ I
~g
w
g
'50 100 1'50 200 2'50 3'50

DC GATE-TRIGGER CURRENT IIGT)-mA
92CS-17062
i- Fig. 15-Typica/ turn-on time vs. gate-triggercurrenr.

SCREW,632
NO' V ..'L ...
.. SLEfRQt.ORC ...
~NR231A
RECTANGULAR METAL
WASHER
::::;.::~::~,;~"'""
. - DF103B
Q
~ ~~CL~I~I~U:~T~~O'141,n
e ~~~';~~';:':~V'CE
0-
6>
e (~~:~S~~7K
6
4953347
}
INSULATING BUSHING
S-- ~~O~~6~'~I~.OOmml
METAL WASHER ~~~~:~'~'~?~E:~~ MAX.
LOCK WASHER @
HEX NUT @ NOT ..V...
'L ...
SLEfRQMRC... 92'C$-22563
SOLDER LUG ..ffl) In the United Kingdom, Europe, MIddle East, and Africa, mounting'
~ hardware policies may dIffer, check the availabilIty of all Items
HEX NUT @ shown with your ReA salesrepresentative or supplier
DIMENSIONAL OUTLINE
JEDEC TO-220AB
INCHES MILLIMETERS
CHAMPFER MAX.
SYMBOL MIN. MAX. MIN.
~L==OPTIONAL '/'
A 0.160 0190 407 4.82

SEATlNGPlANE ~ J 1.02
h 0025 0040 064
II h, 00'2 0020 03' 0.51
F TEMPERATURE
MEASUREMENT h2 0,045 0055 1143 1397
POINT 0.575 0600 14.61 15.24
D
E 0.395 0410 10.04 10.41
E, 0365 0.385 928 9.77
E2 0300 0.320 7.62 8'2
, 0.180 0.220 4.57 5.58
0.080 0.'20 2.03 304
"
F 0020 0.055 051 1.39
H 0235 0265 5.97 6.73
L 0.500 '2.70 -
L1 0.250 - 635
oP 0.141 0,145 3.582 3.683
D 0.040 0.060 1.02 1.52
Z 0.100 0120 2.54 3.04
Lead No.1-Main Terminal 1

Lead No.2-Main Terminal 2
Lead No.3-Gate
Mounting Flange-Main Terminal 2
When incorporating ReA Solid State Devices In equipment, It IS
recommended that the designer refer to "Operating Considerations for

ReA Solid State Devices", Form No.1 CE-402, available on request
from ReA Solid State DiVision, 60x 3200. Somerville. N.J. 08876.
OOill5LlD Thyristors
Solid State 2N5441 2N5442 2N5443
Division 2N5444 2N5445 2N5446
T6400 T6410 T6420 Series
For 120-V Line Operation 2N5441, 2N5444, T6420B (40688)t

For 240-V Line Operation 2N5442, 2N5445, T6420D (40689)t
For High-Voltage Operation .. 2N5443, 2N5446, T6420M (40690)t
T6400N,T6410N,T6420N
Main (40925, 40926, 40927)t
Terminal 2 Main
2N5441 Terminal 2
2N5444
2N5442 Main Features:
2N5443 2N5445
Terminal 2
2N5446 T6420 dildt Capability = 100 Alps Low On-State Voltage at
T6400N
Press-fit T6410N Series Shorted-Emitter, Center-Gate Design High Current Levels
Stud Isolated-Stud
Low Switching Losses Low Thermal Resistance
ReA triacs are gate-controlled, full-wave silicon ac switches. for either polarity of applied voltage with positive or negative
They are designed to switch from an off-state to an onstate gatetriggering voltages.
MAXIMUM RATINGS, Absolute-Maximum Values: 2N5441 2N5442 2N5443 T6400N

For Operation with Sinusoidal Supply Voltage at Frequencies 2N5444 2N5445 2N5446 T6410N
up to 50160 Hz and with Resistive or Inductive Load. T6420B T6420D T6420M T6420N
"REPETITIVE PEAK OFFSTATE VOLTAGE:

Gate open, TJ =-65 to 110"C ................ 400 600 800 V
RMS ONSTATE CURRENT (Conduction angle = 360"):
Case temperature
TC 70"C IPress-fit types) .................. 40 A
= 65C IStud tYpes) . 40 A
== 60C (Isolated-stud types) . 40 A
For other conditions . See Fig. 3
PEAK SURGE INON-REPETITIVE) ON-STATE CURRENT:
60 Hz (sinusoidal) 300 A
RATE OF CHANGE OF ON-STATE CURRENT:
VOM = VOROM,IGT = 200 mA, tr = 0.1, ISee Fig. 100 AI/,s
FUSING CURRENT (for Triac Protection):
TJ = -65 to 110C. t = 1.25 to 10 ms ......... 350 A2s
"PEAK GATE-TRIGGER CURRENT:
For 1 JlS max., See Fig. 7 12 A
"GATE POWER DISSIPATION:
PEAK IFor 10/,s max .. IGTM<;; 4 A, See Fig. 7) ............ 40 W
AVERAGE ... . ............... 0.75 W
"TEMPERATURE RANGE:~
Storage 65 to 150 C
Operating (Case) . 65 to 110 C
"TERMINAL TEMPERATURE lOuring soldering):
For 105 max. (terminals and casel . 225 C
At Maximum Ratings Unless Otherwise Specified and at Indicated Case Temperature (T C)
LIMITS
FOR ALL TYPES

CHARACTERISTIC SYMBOL UNLESS OTHERWISE UNITS
SPECIFIEO
MIN. TYP. MAX.
Peak OffState Current:'

Gate open, T J = 110C, VDROM = Max. rated value. IDROM - 0.2 4" mA

For iT = 100 A (peak), TC = 25C ....... ....... . ... VTM
- 1.7 2
V
For iT = 56 A (peak), T C = 25C ........ .... - 1.5 1.85"
Gate open, Initial principal current = 500 mA (del, vD = 12V,
TC = 25C - 25 60
TC = -65C. IHO - - 100" mA
For other case temperatures .... See Fig. 6
Critical Rate of Rise of Commutation Voltage:'

For Vo = VDROM' 'TIRMSI = 40 A, commutating
di/dt = 22 A/ms. gate unenergized. (See Fig. 141,
TC = 70C (Press-fit types) .................... 5" 30 -
= 6SoC (Stud types) ..................... dv/dt 5" 30 - v/p.s
= 6CtC (Isolated-stud types) ............ .. ... 5 30 -
Critical Rate of Rise of Off-State Voltage:'
For Vo = VOROM' exponential voltage rise, gate open.
TC = 110C'
2NS441, 2NS444, T6420B 50" 200 -
2NS442. 2NS44S. T6420D .. dv/dt 30" '50 - V/~s
2NS443, 2NS446. T6420M 20" 100 -
T6400N. T6410N, T6420N . -
10 75
DC Gate-Trigger Current:' Mode VMT2 VG

For vQ = 12 V (del 1+ positive positive - 15 50
RL = 30n IW negative negative - 20 50
TC = 25C 1- positive negative - 30 80
111+ negative positive - 40 80
IGT mA
Mode VMT2 VG
For Vo = 12 V (del 1+ positive positive - - 125"
RL = 30n IW negative - - 125"
TC = -65C ,- positive
negative
negative - - 240'
111+ negative positive - - 240"
For other case temperatures ...... See Figs. 8& 9
DC Gate-Trigger Voltage:'
For Vo = 12 V (del, RL = 30 n,
TC = 25C ............................ ...... - 1.35 2.5
= _65C VGT - 1.8 3.4" V
For other case temperatures ............... See Fig. 10
For Vo = VDROM' RL = 12Sn.TC = lHt'C 0.2 - -
Gate-Controlled Turn-On Time:

(Delay Time + Rise Time)
For Vo = VDROM' IGT = 200 mA, tr = 0.1 jJ.S,
iT = 60 A (peak). T C = 2SoC (See Figs. 11 & 151 . . . . . . . tgt - 1.7 3 ~s
Thermal Resistance, Junction-ta-Case:

Steady-State
Press-fit types ................... .. . ...... - - 0.8"
Stud types ........ .............. ..... .. ....... ROJC
- - O.g"
C/W
Isolated--stud types .. . ........ ...... ..... - - 1
Transient (Press-fit & stud types) See Fig. 12.
In accordance with JEDEC registration data format (JS-14, RDF 2) filed for the JEDEC (2N-Series) types .
For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1.
~
QUADRANT I
NO'
MAIN TERMINAL 2 ~
ON
POSITIVE ~
STATE ,~
rHO <5
<r
~
:?
QUADRANT
00111 w
MAIN TERMINAL 2 ON '""<r 10
NEGATIVE STATE _I w
" ()
FULL -CYCLE
20 30
RMS ON-STATE
40 ~O
CURRENT(IHRMS1]-A
60
92LS-2256RI

LOAO: RESISTIVE OR INDUCTIVE
~~~~UC;~~~ER~~~~~: ~M~~~~REO AS :-
SHOWN ON DIMENSIONAL OUTLINES
GATE CONTROL MAY BE LOST
110 DURING AND IMMEDIATELY FOLLOWING
SURGE CURRENT INTERVAL.
OVERLOAD MAY NOT BE REPEATED
UNTIL JUNCTtON TEMPERATURE HAS
RETURNED TO STEADY-STATE
RATED VALUE.
I 10" 6. 102
SURGE CURRENT DURATION -FULL CYCLES
':~i:....
;,: i.~t~i~;_
~ '!~
...... _ .. "' .. ;:;-. ; =t:':" .
.. Z-'- ._ .. ,._
L ' : .
.. .;; .. ;;; ~: ::--:::
.:::1?':
... :: ;-":. .:.. :::::'::
20;: . ;.;/; 'I

[.
20
I 2 3 -10 -60 -50-40 -30 -20 -10 0 10 20 30 40
INSTANTANEOUS ON- STATE VOLTAGE tVTI - V CASE TEMPERATURE (TC )_C
tPOSITtVE OR NEGATIVE} 92LS-22~A2
MINIMUM GATE RESISTANCE
t I I I I
UPPER LIMIT OF PERMISSIBLE
AVERAGE lOCl GATE POWER '
DISSIPATION AT RATED CONDITIONS
Fig.7-Gate-trigger characteristics and limit-

ing conditions for determination of
permissable gate-trigger pulses.
o o
-70 -60 -50 -40 -30 -20 -10 0 to 20 30 40 -70 -60 -50 -40 -30 -20 -10 0 10 20 30 40
CASE TEMPERATURE tTe }_C CASE TEMPERATURE ITC I-C
~ III Dlj I i I ,
;!
"'~
'00
Iii i !J- 1"
~~ I I , /
,-' 80
,
,."
0," , 71
~~ iA
~'"
0:11
60
V, "
I
0-'-' ./ I
z, :1 I
"'0
'-'0- 40
'1' ,
~~ I--'
"0 I I
i 20
0
111
II I ; I
i II
I
I 1"
468 468 468
50 100 150 200 250 300 350
10-3 10-2 10-1 I
DC GATE-TRIGGER CURRENT llGT1-mA TIME AFTER APPLICATION OF RECTANGULAR POWER PULSE - SECONDS
92LS-2263A1
Vo
oJ--------------- --
32C517063
Fig. 13-Rate of change of on-state current
with time (defining dildtl.
Fig. 14-Relationship between supply vOltage

and principal current (inductive
load) showing reference points for
I definition of commutating voltage
I I
fdv/d'i.
Vo : I
o-LL----:----
I
1
I
I
I
iLl.
I Fig. 15-Relationship between off-state vol-
rage, on-state current. and gate-
j:
ITM I
I I' 90%
I
POINT
trigger
points
voltage showing reference
for definition of rum-on
time (fgt).
0-1.~--- I-l---
:-- td --t-+-- I,
~tot---i
-,--t-; I
VGT :
AC INPUT 120V 240V 240V
0- L t ,..-100/0
- --------
POINT VOLTAGE
C,
60Hz
O.ljJF
60Hz
O.ljJF
50Hz
O.ljJF
'32LS-2410R2 'OOV 400V 400V
C, O.l..,F O.lIJF O.lj.jF

lOQV tOOV lOCV
Rt 100KU 200KIl 250Kn
tf2W tW 'w
, R, 22KH 3.JKf! 3.3K11
'f2W tf2W tf2W
RCA I
TRIAC I RS R3 15KH 15KH 15KH
(SEE I 'f2W tf2W 1/ZW
TABLE)I
0.18 O.lS- 0.18
,
I SNUBBER
NETWORK Cs O.22).JF O.22j.lF O.22jJF
, Cs
, FOR 40-A 'OOV 400V 400V
, (RMSI-IN 330 330 330
Lf_-..J L J
DUCTIVE
LOAD
RS 390H
tf2W
390"
lf2W
390U
tf2W
O.lIJF O.lIJF O.lIJF
RFI CF 400V 400V
SNUBBER NETWO~j( I'OR INDUCTIVE 'OOV
LOADS OR WHEN COMMUTATING VOLTAGE FILTER
IF 100J,lH 200J,lH 200IJH
ldv/dlJ CHARACTERISTIC 15 EXCEEDED.
2N5441 2N5442 2N5442
RCA TRIACS 2N5444 2N5445 2N5445
T6420B T64200 T64100
MOUNTING CONSIDERATIONS
Mounting of press-fit package types depends upon an inter- guide the press-fit package properly into the heat sink. The
ference fit between the thyristor case and the heat sink. As insertion tool should be a hollow shaft having an inner
the thyristor is forced into the heat-sink hole, metal from diameter of 0.380 0.010 in. (9.65 0.254 mm) and an
the heat sink flows into the knurl voids of the thyristor case. outer diameter of 0.500 in. (12.70 mm). These dimensions
The resulting close contact between the heat sink and the provide sufficient clearance for the leads and assure that no
thyristor case assures low thermal and electrical resistances. direct force will be applied to the glass seal of the thyristor.
A recommended mounting method, shown in Fig. 17, shows The press-fit package is not restricted to a single mounting
press-fit knurl and heat-sink hole dimensions. If these dimen- arrangement; direct soldering and the use of epoxy adhesives
sions are maintained, a "worst-case" cond it ion of 0.0085 in have been successfully employed. The press-fit case is tin-
(0.2159 mm) interference fit will allow press-fit insertion plated to facilitate direct soldering to the heat sink. A 6040
below the maximum allowable insertion force of 800 pounds. solder should be used and heat should be applied only long
A slight chamfer in the heat-sink hole will help center and enough to allow the solder to flow freely.
In the United Kingdom, Europe, Middle East, and Africa, mounting-

hardware policies may differ; check the availability of all items
shown with your ReA sales representative or supplier.
Type of Mounting Thermal

Package Employed Resistance-oeM
Press-fitted into heat sink. Mini-

mum required thickness of heat 0.5
sink = t/8 in 13.17 mml
Soldered directly to heat sink.

Press-Fit
(6040 solder which has a melt-
ing point of 1880 C should be
0.1 to 0.35
used. Heatin~ time should be
sufficient to cause solder to flow
freely).
Directly mounted on heat sink

with or without the use of heat-
I
Stud 0.6
sink compound.
DIMENSIONAL OUTLINE FOR TYPES
INCHES MI LLiMETERS
2N5441, 2N5442, 2N5443, T6400N SYMBOL NOTES
MIN. MAX. MIN. MAX.
PRESS-FIT
A - 0.380 - 9.65
REFERENCE TERMINAL NO.3
POINT FOR CASE <l>D 0.501 0.510 12.73 12.95
INSULATING
MATERIAL l TERMINAL
NO.1
TEMPERATURE
MEASUREMENT <l>D1
<l>D2
-
0.465
0.505
0.475
-
11.81
12.83
12.07
2
J 0.825 1.000 20.95 25.40
@\
M 0.215 0.225 5.46 5.71 1
<l>T 0.058 0.068 1.47 1.73
<l>T, 0.138 0.148 3.51 3.75
.0
l.--
TERMINAL NO.2
NOTES:
1. Contour and angular orientation of these terminals is optional.
2. Outer diameter of knurled surface.
DIMENSIONAL OUTLINE FOR TYPES INCHES MI LLiMETERS

2N5444, 2N5445, 2N5446, T641 ON SYMBOL NOTES
STUD MIN. MAX. MIN. MAX.
A 0.330 0.505 8.4 12.8 -

<l>D1 - 0.544 - 13.81 -
E 0.544 0.562 13.82 14.28 -
F 0.113 0.200 2.87 5.08 3
J 0.950 1.100 24.13 27.94 -
M 0.215 0.225 5.46 5.71 1
N 0.422 0.453 10.72 11.50 -
<l>T 0.058 0.068 1.47 1.73 -
REFERENCE
POINT FOR CASE
<l>T, 0.138 0.148 3.51 3.75 -
TEMPERATURE W %-28 UNF2A Y.28 UNF-2A 2
.0, 1 MEASUREMENT
E J'" SEATING PLANE NOTES:

TERMINAL NO.2 1. Contour and angular orientation of these terminals is optional.
2. Pitch diameter of \428 UNF-2A (coated) threads (ASA B 1. 1-1960).
3. A chamfer or undercut on one or both ends of hexagonal pOrtion
is optional.
DIMENSIONAL OUTLINE FOR INCHES MILLIMETERS

T6420 SERIES SYMBOL NOTES
ISO LATED-STUD MIN. MAX. MIN. MAX.
A - 0.673 - 17.09
<l>D 0.604 0.614 15.34 15.59
<l>D1 0.501 .0.505 12.72 12.82
E 0.551 0.557 13.99 14.14
F 0.100 0.110 2.54 2.79
J - 1.298 - 32.96
M 0.210 0.230 5.33 5.84
M, 0.200 0.210 5.08 5.33
N 0.422 0.452 10.72 11.48
<l>T 0.058 0.068 1.47 1.73 2
<l>T1 0.138 0.148 3.51 3.75 2
<l>T2 0.138 0.148 3.51 3.75 2
<l>W %-28 UNF2A %-28 UNF2A 3
NOTES:
1. Ceramic between hex (stud) and terminal No.3 is beryllium oxide.
3. Pitch diameter of %28 UNF2A (coated) threads (ASA B 1. 1-1960).
NO.1-Gate
No.2-Main Terminal 1
Case, NO.3-Main Terminal 2
OOm5LlD
Solid State
Division
T2710
Series
RCA T2700- and T2710-series devices are gate-controlled

full-wave silicon triacs. They are intended for the control of 6-Ampere Silicon Triacs
ac loads in applications such as heating controls, motor
controls, light dimmers, and power switching systems. Medium-Power, Gate-Controlled,
These triacs are designed to switch from an off-state to an
Full-Wave Types
'.
on-state condition for either polarity of applied voltage with
positive or negative triggering voltages to the gate. /'
T2700B and T2700D are hermetically sealed types having an
on-state current
+75C and repetitive
rating
off-state
and 400 volts, respectively.
of 6 amperes
voltage
at a case temperature
ratings of 200 volts
of
" JEDEC TQ-66
-H-1470A
With Integral Heat Radiator
These devices are also available with integral heat radiators,
T2710 Series
as T2710B and T2710D, respectively.
Features
Maximum
For Oprratioll
Ratings, Absolute-Maximum
with Sinusoidal Supply Voltage at Fre-
Values: nO-Watt Control I T2700B (40429)*
120-Volt Line Operation \ T2710B (40502)*
qll(,~lcies of 50/fjO Hz. and 1(,;tll Rcsistirc or lndllctirc Load
1,440-Watt Control I T2700D (40430)*

240-Volt Line Operation \ T2710D (40503)*
REPETITIVE PEAK OFF-STATE 6-A (rms) On-State Current Ratings

VOLTAGE., VDROM:
100-A Peak Surge Full-Cycle Current Ratings
Gate Open,
ForTJ=-65to+1000C 200 Shorted-Emitter Design
RMS ON-STATE CURRENT, IHrms): -- contains internally diffused resistor from gate to
Main Terminal No.1.
For case temperature (Tel of +75 C ..
and a conduction angle of 3600 ..... Center Gate Construction
For ambient temperatures (T A) up to -- provides rapid uniform gate current spreading for
+ 100C and a conduction angle of 360 faster turn-on with substantially reduced heating
PEAK SURGE (NON-REPETITIVE) effects
ON-STATE CURRENT, 'TSM:
Numbers in parentheses
Low Switching Losses
For one cycle of applied (e.g. 40429) are former
principal voltage . ReA type numbers.
Low Thermal Resistance
For more than one full cycle of
applied voltage. . . . . . . . . . . . . . . .. See Fig. 4.
PEAK GATE-TRIGGER CURRENT ,'Gnt'

For 1 }.L s max. 4
GATE POWER DISSIPATION:.
PEAK, P For 1 f.L s max. and
GM 'GTM f, 4 A (peak), . 16
AVERAGE, PG(AV) ....
TEMPERATURE RANGE+:
Storage . -65 to + 150C
Operating (case) . -65 to + 100 c
'~~~r~i~g~\go~~\i~Yt~:mTna~r
{~rminal 2 voltage (VMT2) with
.For either. polarity of gate voltage(VGT) with reference to .For information on the reference point of temperature me8sure-
maIn termmal 1. menl, see Dimensional Gutl ine.
LIMITS
CHARACTERISTIC SYMBOL T2700B T2710B T27000 T27100 UNITS
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
Peak Off-State Current:"
Gate Open 10ROM - 0.1 4 - 0.1 1.2 - 0.2 4 - 0.2 1.2 mA
At TJ + 1000C and VoROM = Max. rated value
Maximum On-State Voltage:"

For iT = 30A (peak) and T C = + 25 c ................ vTM - 1.8 2.25 - 1.8 2.25 - 1.8 2.25 - 1.8 2.25 V
DC Holding Current"
Gate Open
Initial principal current 150mA (DC) mA
At T C = + 25 C ........
For other case temperatures .
IHO
..
- 15 30 - 15 30 -
See Fig. 8.
15 30 - 15
.
30
Critical Rate of Rise of Commutation Voltage:-.

For Vo = VoROM, I~rms)' 6 A, commutating
di/dt 3.2 Alms, and gate unenergized
At T C + 75 c ......
dv/dt
3 10 - - - - 3 10 - - - -
V/J.LS
I~rms) and T A specified by
curve A of Fig. 16...... - - - 3 10 - - - - 3 10 -
I~rms) and T A specified by
curve B of Fig. 16 .................. - - - 4 12 - - - - 4 12 -
Critical Rate of Rise of Off-State Voltage:-
For Vo VoROM' exponential voltage rise, and gate open dv/dt 30 150 - 30 150 - 20 100 - 20 100 - V/J.Ls
At T C = + 100 c
DC Gate-Trigger Current"!
For Vo 12 volts (DC), RL = 12 (1
TC' +250C, and specified triggering mooe:
1+ Mode: positive VMT2' positive VGT .........
IGT - 15 25 - 15 25 - 15 25 - 15 25
111-Mode: negative VMT2' negative VGT ...... - 15 25 - 15 25 - 15 25 - 15 25
mA
1- Mode: positive VMT2' negative VGT ........ - 25 40 - 25 40 - 25 40 - 25 40
111+Mode: negative VMT2' positive VGT ....
For other case temperatures .......... ..
- 25 40 - 25 40 -
See Fig. 12 & 13.
25 40 - 25 40
.
DC Gate-Trigger Voltage:-!
For Vo 12 volts (DC) and RL 120
At T C + 25 c ... -1112.21-11 12.21-1 1 12.2
For other case temperatures .........
For Vo VoROM and RL 125 (1
VGT - See Fig. 14.
1 12.21-1
. V
At T C + 100 c ........... 0.2 - - 0.2 - -' 0.2 - - 0.2 - -

For Vo' VoROM and IGT '80mA,
0.1 J.LS rise time, and iT IDA (peak)
tgl - 2.2 - - 2.2 - - 2.2 - - 2.2 - J.Ls
At TC +25 c
Thermal Resistance:
- - -
Junction-to-Case (Steady-State) .
Junction-to-Case (Transient) BJ-C
-
-- I -
- 4 - -
See Fig. 15.
- 4 - -
. C/W
Junction-to-Ambient .... BJ-A I- I See Fig. 16. I - I - I - I See Fig. 16.
-For either polarity of main terminal 2 voltage (VMT2) with feference to main terminal 1.
tFOT either polarity of gate voltage (VGT) with Tefetence to main terminal l.
'Variants of these devices having dv/dt characteristics selected specifically for
inductive loads are available on special order; for additional information, contact
your ReA Representative 01 your ReA Distributor.
CURRENT WAVEFORM
LOAD: RESISTIVE
CONDUCTION ANGLE '"
CURRENT WAVEFORM; SINUSOIDAL

LOAD: RESISTIVE OR INDUCTIVE' I
I
1
, I
I
..
::l I COMt.tUT ATING
..
u~
...<D-I
110 I
I
dv/dt
u I
....
00>- 100
.....
0-
.. " 90
"- ....
>-
2
....
2"
X 2
2>-
80
70
o I 2 345
RMS ON-STATE AMPERES [..1 t (rms ,J
Eg~ri~~:S~~~K,EENCY: 50/60 Hz SINE WAVE I 1 III1

100
CASE TEMPERATURE
RMS ON-STATE
(TC1:
AMPERES
+ 75C
[I t (rms lJ '"6
IIIIII1 II,
~ "" GATE C~~~'ROL MAY ~E LO~i-
E ~" ~g~~O~,~~D ~~~~~I~~~~1NT
~ ;80 ~TEE:L6AA\; MAY NOT 8E RE-

UJ V> PEATED UNTIL JUNCTION
~ ~ t... 60 H,z, TEMPERATURE HAS RETURNED
z UJ
60 I ..... 1/ TO STEADY-STATE
~ ~ r-- ....~ RATED VALUE.
~ ~ 50 Hzr:>
~ ~40
"''?
" z
~ 0
20
468 468 468 Fig. 6- Oscilloscope display for measurement of gate-controlled

10 100 1000 turn-on time (tgt).
SURGE CURRENT DURATION-FULL CYCLES
92$$-3782
AVERAGE I DC) GATE POWER
2 DISSIPATION AT RATED
CONDITIONS (SEE FIG. 12.
13 a 14)
20 40 60 80 100 120 140 160
DC GATE-TRIGGER MILLIAMPERES I1GTI

6 80.01 2 6 80.1 6 81.0
POSITIVE OR NEGATIVE DC GATE-TRIGGER AMPERESUGTI
9255-3785
RFI FILTER
r------l
-ReA : LF
TRIAC I
,
(SEE I CF
TABLE) I
o I
FOR INDUCTIVE LOADS
$
CONNECT POINTS c' AND
1.2K 2w 7k~cf' 0' TO TERMINALS C AND
0, RESPECTIVELY
CONNECT P'OINTS A' AND B'
TO TERMINALS A AND 8,
RESPECTIVELY I 200V
O.O~eF
40fN
B' PHOTOCELL 0' . FOR FOR
120V 24DV
INPUT INPUT
AC RFI FILTER
INPUT C, C, R, R, R3 RCA
VOLTAGE L,' C,' TYPES
(lyp.) (lyp.)
120V O.lpF O.lpF IOOKn IKn 15Kn O.lpF T2700B
IOOV IOOpH
60Hz 200V 1/2W 112W 1/2W 200V T2710B Fig. 11 - Typical phase-control circuit for lamp
dimming, heat controls, and universal
240V O.05pF O.lpF 200Kn 7.5Kn 7.5Kn O.lpF T2700D
IOOpH motor speed controls.
50/60Hz 400V IOOV 1/2W 2W 2W 400V T2710D
PRINCIPAL DC VOLTS - 12
-;. lOAD 12 Q, RESISTIVE
TRIGGERING MODES: I-ANDU]
;
'"'"
~
..
II:
125
..
ffi 125
'"
~ 100
""j 100
::J
..J i
~ 75 ...
0:
co 75
co ~(fAf
'"
co
co i<
>-
ii 50 50 TYPIC~"t
>-
'">-
'"~ " 25
co
co 25 u
0
g
0
-50 -25 0
CASE TEMPERA7URE ITC)- "C
Fig. 12 - DC gate-trigger current (for /+ and 11/- triggering

modes) If.S". case temperature.
PRINCIPAL DC VOLTS 12
>.-3
LOAD -12n,
TRIGGERING
RESISTIVE
MODES: All i ...
u
Z
;!
100
I
I ..-
! '"
...>-'" ~
A!AX/AlUA! :!~ 60
'"
!:i "'-,
g I"
- ~~
~2 "'I
1;;>- 60
..J
,,-"' /
"
Z
;; ~5
0: TYPICAL zl 4
'"
>-
Z
~~
1 O:z
-
"co I
468
I 68 468
0-3 10-Z 10-1
TIME AFTER APPLICATION OF RECTANGULAR POWER PULSE -SECONDS
9ZLS-Z407RI,
FOR T2710 SERIES
JEDEC TO66 WITH HEAT-RADIATOR
Dimensions in Inches and Millimeters

NOTE: Dimensions in parentheses are in millimeters and are
derived [rom the basic inch dimensions as indicated.
Note 1: Measured at bottom of heat-radiator.

Note 2: 0.035 in. (.889) C.R.S . tin plated.
Note 3: Recommended hole size for printed-circuit board is
0.070 in. 0.778) dia.
TERMINAL DIAGRAM
FOR T2700 AND T2710 SERIES
Pin I - Gate
Pin 2 - Main Terminal
Flange, Case - Main Terminal 2
Case, Flange (T2700 Series) _ Main Terminal 2
Case, Flange, Heat Radiator (T27l 0 Series)
DIMENSIONAL OUTLINE FOR T2700 SERIES SUGGESTED MOUNTING ARRANGEMENT
JEDEC TO-66 FOR T2700SERIES
F1l ~'HE
SEATING
Q
rn=~ 2 SCREWS, 6 32
~-"OTAVAILADLEFROMRCA
e
DF31A
MICA INSULATOR
SUPPL'EDW,lHOEVICE
e 0
~ 0 ~CEHA:si:~,K
SYMBOL
.,
"0
INCHES
MIN.
.250
.028
MAX.
.340
.034
.620
MILLIMETERS
MIN.
6.35
.711
MAX.
8.64
.863
15.75
NOTES
0
2METAl
S
Ql
WASHERS
~
-::...
495334-7
'1 NYLON
SHOULDER
0250
SHOULDER
INSULATING
1.D.~O.156on,14.00mml
CIA, =
In. (640 mm)
THICKNESS
0050 on !I 27 mm) MAX
BUSHINGS
.470 .SOO i1.94 12.70

"1
.190 .210 4.83 5.33
2 LOCK WASHERS @
'I .093 .107 2.36 2.72
.G7,) 1.27 1.91 2HEX NUTS@>
F ,050 2
Fl .050 1.27 1
.360 '1S0l0ERLUG~
L 9.14
'" q
.142
.958
.152
.962
],61
24.)]
3.86
24.43 2HEXNUTS@>
'1 .]50 8.89

'2 .145 3.68
.570 .590 14.48 14.99
NOTES,
1. THE OUTLINE CONTOUR IS OPTIONAL WITHIN ZONE
OEFINED BY <1>0 AND Fl-
2. DIMENSION DOES NOT INCLUDE SEALING FLANGES.
OO(]5LJ[]
Solid State
Division

Power-Control and Power-Switching Applications
For 120- V Line Operation - T2800B (40668) *

For 240-V Line Operation - T2800D (40669)*
For High-Voltage Operation - T2800M (40670)*
Features:
10o-A Peak Surge Full-Cycle low Thermal Resistance
Current Ratings Package Design Facilitates Mounting
Shorted-Emitter Center-Gate Design on a Printed-Circuit Board
low Switching losses
RCA - T2800B, T2800D. and T2800M+ triacs are gate- negative gate triggering voltages. They have an onstate
controlled full-wave silicon switches utilizing a plastic case current rating of a amperes at a TC of aoc and repetitive
with three leads to facilitate mounting on printed-circuit off-state voltage ratings of 200, 400, and 600 volts, re-
boards. They are intended for the control of ac loads in such spectively.
applications as motor controls. light dimmers. heating The unique plastic package design provides not only ease of
controls. and power-switching systems. mounting but also low thermal impedance, which allows
These devices are designed to switch from an offstate to an operation at high case temperatures and permits reduced
onstate for either polarity of applied voltage with positive or heat-sink size.
MAXIMUM RATINGS, Absolute-Maximum Values: +Formerly ReA Oev. Nos. TA7364, TA7365, and TA7518,respectively.
For Operation with Sinusoidal Supply Voltage at Frequencies up to 50160 Hz and with Resistive or Inductive Load.
REPETITIVE PEAK OFF-STAToE VOLTAGE: T2800B T2800D T2800M
Gateopen.TJ=-65to100C ......................................... VOROM 200 400 600 V
RMS ON-STATE CURRENT (Conduction angle = 360):
Case temperature
'TIRMSJ
TC=800C
For other conditions
.
_..............................
---8----
-- See Fig. 3 ---
'TSM
____ 100 ____
60 Hz (sinusoidal) ................................................ A
___ 85 ____
50 Hz (sinusoidal) . A
For more than one cycle of applied principal voltage , ..................... --See Fig. 4---
PEAK GATETRIGGER CURRENT:
____ 4
'GTM A
___ 16 ____
Peak (For 1 ~s max., IGTM ~4 A. See Fig. 11 ................. PGM w
AVERAGE ............................. , ............ PGIAVI--- 0.2 ___ W
TEMPERATURE RANGE:
Storage . . Tstg -65 to 150 __ c
Operating (Casel ......................... TC -65 to'100 __ c
TERMINAL TEMPERATURE (During soldering):
___ 225 ____
For 10 s max. (terminals and easel TT c
For either polarity of gate voltage (VG) with reference to main terminal 1.
. For temperature measurement reference point, seeDimensional Outline.
Peak Off-State Current:-
Gate Open loRoM - 0.1 2 - 0.1 2 - 0.1 2 mA
At TJ ~ + 1000C and VoROM ~ Max. rated value
Maximum On-State Voltage:- vTM - 1.7 2 - 1.7 2 - 1.7 2 V

For iT ~30A(peak) and TC ~ +250C ...............
DC Holding Current:-
Gate Open
Initial principal current ~ 150mA (DC) IHO mA
At TC ~ +25 c ............... - 15 30 - 15 30 - 15 30
For other case temperatures ...... See Fig. 8.
Critical Rate of Rise of Commutation Voltage:-

For Vo ~ VoROM, IT(RMS) ~ 8 A, Commutating dv/dt V!!'-s
di/dt ~ 4.3 Alms, and gate unenergized
At T C = +80 C ............. 4 10 - 4 10 - 4 10 -
Critical Rate-of-Rise of Off-State Voltage:-
For Vo ~ VoROM exponential voltage rise, and gate open
At T C ~ + 1000(; ........ dv!dt 100 300 - 75 250 - 60 200 - V!!'-s
For other case temperatures ............. See Fig. 10.
DC Gate-Trigger Current:- t
For Vo ~ 12V (DC), RL ~ 12 D
TC = +25 oC, and specified triggering mode:
1+Mode: VMT2 is positive, VG is positive ...... - 10 25 - 10 25 - 10 25
mA
111- Mode: VMT2 is negative, VG is negative .......... IGT - 15 25 - 15 25 - 15 25
1- Mode: VMT2 is positive, VG is negative ........... - 20 60 - 20 60 - 20 60
111+Mode: VMT2 is negative, VG is positive ......... - 30 60 - 30 60 - 30 60
For other case temperatures ...... See Fig. 12. & 13.
DC GateTrigger Voltage:-t
For Vo ~ 12V (DC) and RL ~ 12 D
At TC = +25 c ............. - 1.25 2.5 - 1.25 2.5 - 1.25 2.5
VGT V
For other case temperatures ....... See Fig. 14.
For Vo ~ VoROM and RL = 125 D
At T C = + 100C ............................ 0.2 - - 0.2 - - 0.2 - -
Gate-Controlled TurnOn Time:
For Vo = VoROM and IGT ~ 80 mA tgt - 1.6 2.5 - 1.6 2.5 - 1.6 2.5 !'-S
O.l!,-s rise time, and iT ~ 10A (peak)
At TC = +250C (See Fig. 15).
Thermal Resistance:
Junction-to-Case .. 8J-C - - 2.2 - - 2.2 - - 2.2 OC!W
Junction-ta-Ambient .... 8J-A - - 60 - - 60 - - 60 C!W
-For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal!.
tFor either polarity of gate voltage (VG) with reference to main terminal!.
.Variants of these devices having dv!dt characteristics selected specifically for inductive loads are available on
special order; for additional information, contact your RCA Representative or your RCA Distributor.
LOAD: RESISTIVE OR INDUCTiVE
SHOWN ON OiMENSIONAL OUTLINE
o 4 6 8 10 2 4 6 8 10 12
FULL- CYCLE RMS ON-STATE CURRENT[ITlRMS1]-A RMS ON-STATE CURRENT [tT(RMS~-9A2CS_15017RI

9ZC5- t5018RZ
SUPPLY FREQUENCY: SO 160 SINE WAVE

LOAD: RESISTIVE
Hz
II III1
01~~~~~:~~~~E~Tfl J: 8A I I II11
- ..
~~~E :[;T8{~:~
100
wI """ GA~E CO~~IROL MAY ~E LO 5T"
>- ...... DURING AND IMMEDIATELY
E ~ FOLLOWING SURGE CURRENT
~ ~BO "- INTERVAL.
OVERLOAD MAY NOT BE RE-
w>-
"'z " PEATED UNTIL JUNCTION
'w ~O Ht7 +6M~fER:ci~~~T~~~ RETUR
NED
~ :i60
.
~ RATED VALUE,
~G
ww
e>>- SOH':>
~ ~40
"''?
~ z
:::::::-::--
0
it' 20
0
. Ei 8
10
SURGE CURRENT
4 Ei 8
100
DURATION-FULL CYCLES
4 Ei 8
1000
9255 - 3910 R2
o 0.5 1.5 2.5 3
POSITIVE OR NEGATIVE INSTANTANEOUS ON-STATE VOLTAGE (YT)-V

92C5-1502:IRI
Fig. 7 - On-state current vs. on-stare vOltage.
Fig. 6 - Oscilloscope display for measurement of gate-controlled

turnon time (tgt).
o
~J 80
RFI
r------l
FILTER ~~
'"'"
z cr: 60
tlRCA I
I LF
~a
TRIAC I
(SEE I CF
'"'"
>z
i=Ci
TABLE I J <n-'
00
o I <>.'"
u
Cl
FOR INDUCTIVE LOADS

,
D' TO TERMINALS C AND
D, RESPECTIVELY
$
1.2K 2W
'"~
" FOR PHOTOCELL CONTROL I
t20v 240 V
~
CONNECT POINTS A' AND B' I C, O.O'5B ,..F/200V 0.I,..F/400V ~
TO TERMINALS A AND B,
RESPECTIVELY 1.2 Kn '"
L
R, I Kil
B' PHOTOCELL
92:C5-17995
Cl~
~>
~~
AC RFI FILTER
"'~
J.. ~
INPUT C, C2 R, R2 R3 RCA Cl~
LF CF
VOLTAGE TYPES
120 V 0.1~F 0.1~F 100 Kn 2.21<11 151<.11

(typ.) (typ.l
0.1 ~F
'"~
60 ", 200 V l00V .W .W .W loo~H
200 V
T2800B
'"-'
240 V
50 Hz
0.1Jl.F
40(1V
0.1 ~F
l00V
2501<n
,W .w
J.Jl<n 151<n
.W 200,"
0.1Jl.F
400 V
T2800D
~
...
250
240V 01 ~F 0.1 ~F
I 151<n 0.1 ~F '"
u 0
60", 400 V '00 V
~wKn J~J:n
.W 200 ~H
400 V
T2800D
9255- 3907
Fig. 10 - Critical rate-ofrise of off-state voltage vs. case temperature.

6 80.01 6 80.1 6 81.0
POSITIVE OR NEGATIVE DC GATE-TRIGGER CURRENT (lGT)-A
92SS-3785RI
I
-w
ci
z
-'>
"
;::
z
;21 0
~:;
.... -
w>
z
~
....
z~
~~ 1
0
w
-'-'
0
~> iO
z
w 8
~ w
....
'" ;;
0 50 roo 150 200 250 300 350

DC GATE-TRIGGER CURRENT (IGT)-mA
92CS-17062
b1 0012 0.020 0.31 0.51
b2 0.045 0.055 1.143 1.397
D 0.575 0.600 14.61 15.24
E 0395 0.410 10.04 10.41
.
E1 0.365 0.385 928 9.77
E2 0.300 0320 7.62 812
0180 0.220 4.57 5.58
0.080 0.120 2.03 3.04
"
F 0.020 0.055 0.51 1.39
H 0.235 0.265 5.97 6.73
L 0.500 ~ 12.70 -
L1 - 0.250 - 6.35
oP 0.141 0.145 3.582 3.683
Q 0.040 0060 1.02 1.52
z 0.100 0.120 2.54 3,04
Q SCREw,632
~..oTA"'''''l'''IILEfAOMRC'''
~ NR231A
~RECTANGULARMETAL
WASHER
k' ,,"Vol'l"''''UAfPlJ6L'SH(O
'''''DW..HPR'Cf5
~
V'
~~~~~~SUlATOR
Q
HOLE OIA. '" O.1~5 0, 141 ,n
e ~~,;~5~,;:::~,,'cE
6>
e 1~~:~s~~7K
I
6
495334 7
-- INSULATING BUSHING
~
er---- ~~OU~~~'~I~.OOmml
METAL WASHER ~L'~~::~~'~:~E:;n~ MAX
lQCKWASHER a
HEXNUT @ "'OT"'V""IMlltJ"O~\R,,,,
SOLDEALUG
~ ~
HEXNUT @

OO(]5LJ1]
Solid State
Division
6-A (rms) on-state current rating

100-A peak surge full-cycle current rating at 60 Hz
85-A peak surge full-cycle current rating at 50 Hz
Shorted-emitter design - contains internal diffused resistor from
gate to main terminal 1
Center gate constructior- - provides rapid uniform gate-current
spreading for faster turn-on with substantially reduced heating effects
Low switching losses
Low thermal resistance
Package suitable for mounting on printed-circuit boards
The T28010F triac (formerly RCA type 40842) is a negative gate triggering voltages. It has an on-state current
gate-controlled full-wave ac switch. It is intended for the rating of 6 amperes at a case temperature of 800C and a
control of ac loads in such applications as motor controls, repetitive off-state voltage rating of 450 volts.
light dimmers (300 to 1440 WI. heating controls, and The unique plastic package design provides not only ease of
power-switching systems. mounting but also low thermal impedance, which allows
operation at high case temperatures and permits reduced
This device is designed to switch from an off-state to an
heat-sink size.
on-state for either polarity of applied voltage with positive or

For operation with 50160 Hz, Sinusoidal Supply Voltage and Resistive or Inductive Load
T2801 DF
(40842)
REPETITIVE PEAK OFF-STATE VOL TAGE*
Gate open, for T J = 40 to +1 aaoe VDROM 450 V
RMS ON-STATE CURRENT
For case temperature ITCl of +80C and a conduction angle of 360 0
ITIRMS) 6 A
PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT
For one full cycle of applied principal voltage lBO-Hz, sinusoidal) ITSM 100 A
For one full cycle of applied principal voltage (50-Hz, sinusoidall 85 A
For more than one full cycle of applied voltage . See Fig. 4
PEAK GATE-TRIGGER CURRENT t
For 10 J.1.S max. IGTM 4 A
PEAKt
For 10 /" max. and IGTM:S; 4 A (peak) PGM 16 W
AVERAGE .................. PG(AV) 0.2 w
TEMPERATURE RANGq
Storage ......... -40 to +150oC
Operating (case) . -40 to +100oC
t For either polarity of gate voltage (VG) with reference to main terminal 1.
t For information on the reference point of temperature measurement, see Dimensional Outline.
ELECTRICAL CHARACTERISTICS, At Maximum Ratings and at Indicated Case Temperature (TCi
Unless Otherwise Specified.
LIMITS
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNITS
Peak Off-State Current: *
Gate Open IDROM - 0.1 2 mA
At TJ = +100oC and VDROM = Max. rated value
Maximum On-State Voltage: *

"TM - 1.5 2.25 V
For iT = 10 A (peak) and TC = +250C
Critical Rate of Rise of Commutation Voltage: *'

For vD = VDROM, IT(RMS) = 6 A, Commutating
dvldt VII'S
di/dt = 3.2 Alms, and gate unenergized
At TC= +80oC . 2 10 -
Critical Rate of Rise of Off-State Voltage. *
For vD = VDROM, exponential voltage rise, and gate open
dvldt VII'S
At TC = +100oC 20 250 -
For other case temperatures See Fig. 6.
DC Gate-Trigger Current: t
For vD = 12 V (DC), RL = 12n
TC = +250C, and specified triggering mode: IGT mA
1+ Mode: VMT2 is positive, VG is positive - 25 80
111-Mode: VMT2 is negative, VG is negative - 30 80
DC Gate-Trigger Voltage: *t
For vD = 12 V (DC) and RL = 12n
At TC = +250C . - 1.5 4.0
VGT V
For other case temperatures See Fig. 10.
For vD = VDROM and RL = 125n
At TC = +100oC .. 0.2 - -
Gate-Controlled, TurnOn Time:
For vD = VDROM and IGT = 80 mA tgt - 2.2 - J1S
0.1 f.1Srise time, and iT = lOA (peak)

at TC = +250C
Thermal Resistance:
JunctiontoCase . o J-C - - 2.2 C/W
Junction-to-Ambient J.A - - 60 C/W

For either polarity of main terminal 2 voltage (VMT21 with reference to main terminal 1.
t For either polarity of gate voltage IVGI with reference to main terminal 1.
Variants of these devices having dv/dt characteristics selected specifically for inductive loads are available on
special order; for additional information, contact your ReA Representative or your ReA Distributor.
QUADRANT
No. III
MAIN TERMINAL 2 ON
NEGATIVE STATE _ I
o "' 6 10 2 4 6 8 to 12
FULL- CYCLE RMS ON-STATE CURRENT[IT(RMSll-A RMS ON-STATE CURRENT [IT(AMSll~:cS_18079

92CS-18078
SUPPLY FREQUENCY: 50/60 Hz SINE WAVE

LOAD: RESISTIVE
CASE TEMPERATURE (TCl : + 800 C
RMS ON-STATE CURRENT [IT(RMSl)::6
100
-
GATE CONTROL MAY BE LOST
~l DURING AND IMMEDIATELY
!: ~ FOLLOWING SURGE-CURRENT
INTERVAL.
~ ~BO
w>- pEATED UNTIL JUNCTION
~~ TEMPERATURE HAS RETURNED
TO STEADY-STATE
~ ~60 RATED VALUE
~G
ww
'" >-
g; ~40
"'~
'" z
~ 0
20
.68 68 468 o 0.5 I 1.5 2.5

10 100 1000
SURGE-CURRENT DURATION-FULL CYCLES POSITIVE OR NEGATIVE INSTANTANEOUS ON-STATE VOLTAGE (vTI-V
92CS-18080 92CS-18082
VD z VOROM
GATE OPEN
6 80.01 6 80.1 2 6 81.0

POSITIVE OR NEGATIVE DC GATE-TRIGGER CURRENT l1GT)-A
92CS-16083
AC RFI FILTER
INPUT C1 C2 R1 R2 R3 L C
F F
VOLTAGE (typ.l (typ.l
240V O.1I'F O.1I'F 250Kn 3.3Kn 15Kn 200I'H O.lI'F

50Hz 400V 100V 1W '/,W Y2W 400V
240V O.1I'F O.1I'F 200Kn 3.3Kn 15Kn O.1I'F

'/,W .200I'H
60Hz 400V 100V 1W %W 400V
~r=-:-~PTIONAL .CHAMPFER
hI
SEATING PLANE
,,
A L~I
F TEMPERATURE
:
MEASUREMENT
POINT
~
-'>
;ll
" ...
or "
w>
...
....
z~
~~ 2
~>
w
~
"
INCHES MilLIMETERS
SYMBOL MIN. MAX. MIN. MAX.
A 0.160 0.190 4.07 4.82

b 0.025 0.040 0.64 1.02
bl 0012 0.020 0.31 0.51
b2 0.045 0.055 1.143 1.397
0 0.575 0.600 14.61 15.24
E 0.395 0.410 10.04 10.41
.
El 0.365 0.385 9.28 9.77
E2 0.300 0.320 7.62 812
4.57
., 0.180
0.080
0.220
0.120 2.03
5.58
3.04
F 0.020 0.055 0.51 1.39
H 0.235 0.265 5.97 6.73
L 0.500 - 12.70 -
Ll - 0.250 - 6.35
oP 0.141 0.145 3.582 3.683
Q 0.040 0.060 1.02 1.52
Z 0.100 0.120 2.54 3.04
ffil(]5LJ[J
Solid State
Division

Power-Control and Power_Switching Applications
For Low-Voltage Operation - T2850A (40900)*

For 120-V Line Operation - T2850B (40901)*
For 240-V Line Operation - T2850D (40902) *
Features:
Internal Isolation Low Thermal Resistance
10o-A Peak Surge Full-Cycle Package Suitable for Direct
Current Ratings Mounting on Heat Sink
Shorted-Emitter, Center-Gate Design Glass Passivated Junctions
Low Switch ing Losses
The T2850A, T2850Ba, and T2850Db triacs are gate- off-state voltage ratings of 100, 200, and 400 volts, respec-
controlled full-wave ac switches utilizing a plastic case with tively.
three leads to facilitate mounting on printed-circuit boards.
The ISOWATT package uses a plastic case with three leads
They are intended for the control of ac loads in such
that are electrically isolated from the mounting flange.
applications as motor controls, light dimmers, heating
Because of this internal isolation, the triac can be mounted
controls, and power-switching systems.
directly on a heat sink, without any insulating hardware;
These devices are designed to switch from an offstate to an therefore heat transfer is improved and heat-sink size can be
on-state for either polarity of appl ied voltage with positive or reduced.
negative gate triggering voltages. They have an onstate cur- aFormerly ReA Dev. No. TA8357
rent rating of 8 amperes at aTe of 75C and repetitive bFormerly RCA Dev. No. TA8358

For Operation with Sinusoidal Supply Voltage at Frequencies up (0 50160 Hz and with Resistive or Inductive Load.
REPETITIVE PEAK OFF-STATE VOLTAGE: 0 T2850A
Gate open. TJ= -65 to 100C _.. VOAOM 100
RMS ON-STATE CURRENT IConduct;on angle' 3601:
Case temperature ITIRMSI
TC' 75C ------- 8 -----
For other conditions -----~eH~3---
PEAK SURGE (NON-REPETITIVEI ON-STATE CURRENT:
For one cycle of applied principal voltage ITSM
60 Hz (sinusoidal) 100---- A
50 Hz (sinusoidal) ------85---- A
For more than one cycle of applied principal voltage ............ See Fig. 4 ---
PEAK GATETRIGGER CURRENT: 0
For 1 J.lS max.; see Fig. 11 . IGTM 4 A

Peak (For 1 IJSmax., IGTM " 4 A; see Fig. 11) PGM 16 W
AVERAGE... . .................... PG(AVI 0.2---- w
TEMPERATURE RANGE:"
Storage _. . . . . . . . . . . . . . . _ . Tstg ---- -65 to 150--- ')C
Operating lCasel .................. TC 65to 100--- 'c
TERMINAL TEMPERATURE (Dur;ng solder;ngl:
For 10 s max. {terminals and casel . TT 225---- "c
LIMITS
CHARACTERISTIC SYMBOL T2850A T2850B T2850D UNITS
MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.
Peak OffState Current:'

Gate Open, VOROM = Max. rated value 10ROM - 0.1 2 - 0.1 2 - 0.1 2 mA
At TJ = 100'C ................................
For iT = 30 A (peak) and TC = 25'C .................. "TM - 1.7 2 - 1.7 2 - 1.7 2 V
ac Holding Current:'
Gate Open
Initial principal current = 150 mA (de) IHO - 15 30 - 15 30 - 15 30 mA
At TC = 25'C ................. ..... . ........ ..
For other case temperatures ............ .
.. . ...... See Fig. 8
Critical Rate of Rise of Commutation Voltage:"

Forva = VOROM, 'T(RMS) = 8 A, Commutating
dv/dt V//J-s
di/dt = 4.3 Alms, and gate unenergized
AtTC=75'C ........... ....... ....... . . . . . . . . 4 10 - 4 10 - 4 10 -
Critical Rate of Rise of OffState Voltage:'
For va = VaROM, exponential voltage rise, and gate open
AtTC=100'C . .... .. . . . . ... . .. . .. ... .. . . . .. dv/dt 125 350 - 100 300 - 75 250 - V//J-s
For other case temperatures ... .... .... ... ... . ....... See Fig. 10
ac GateTrigger Current:'t
For vO = 12 V (del. RL = 12n
TC = 25'C, and specified triggering mode:
I + Mode: VMT2 is positive, VG is positive ... ...... ... - 10 25 - 10 25 - 10 25
ill -Mode: VMT2 is negative, VG is negative. .. ........ IGT - 15 25 - 15 25 - 15 25 mA
I - Mode: VMT2 is positive, VG is negative .. ......... - 20 60 - 20 60 - 20 60
ill + Mode: VMT2 is negative, V G is positive ...... ...... - 30 60 - 30 60 - 30 60
For other case temperatures ..... ............. .... . . See Figs . 12& 13
ac GateTrigger Voltage:'t
For va = 12 V (de) and RL = 12n
At TC = 25'C ... ........ ...................... - 11 251251 -11.2512.51 - 11.251 2.5
V
VGT
For other case temperatures .. .... ................ See Fig. 14
Forva = VaROM and RL = 125n
AtTC = 100'C ............ ... . ........... 0.2 - - 0.2 - - 0.2 - -
Gate-Controlled Turn-On Time (Delay Time + Rise Time):

For vO = VaROM and IGT = 160 mA
rise time = O.l/J-s, and iT = lOA (peak) tgt - 1.6 2.5 - 1.6 2.5 - 1.6 2.5 /J-S
At TC = 25C ISee Fig. 151 ...................
Thermal Resistance:
Junction-ta-Case .. ..... .. .... .... .. . ..... ROJC - - 3.1 - - 3.1 - - 3.1 'CIW
JunctiontoAmbient ... ..... ... .... . . . . . . . . . . . ... ROJA - - 60 - - 60 - - 60 'CIW
t For either polarity of gate voltage (VGI with reference to main terminal 1.
Variants of these devices having dv/dt characteristics selected specifically for Inductive loads are available on
special order; for additional information, contact your RCA Representative or your RCA Distributor.
QUADRANT
No.1
MAIN TERMINAL 2
POSITIVE
-ON
STATE
IH

SHOWN ON DIMENSIONAL OUTLINE
o 4 6 S 2 4 6 8 10 12
FULL-CYCLE RMS ON-STATE CURRENT[ITIRMS}]-A

RMS ON - STATE CURRENT [1 T (RMSU -A
92CS-19602
92C$ - 15018R2
Fig. 2 - Power dissipation vs. on-state current.
SUPPLY FREQUENCY: SO 160 Hz SINE WAVE

LOAD: RESISTIVE
CASE TEMPERATURE {Tcl : 750 C
100
RMS ON-STATE CURRENT [I T RMS SA J:
-
~.!. GATE CONTROL MAY BE LOST
;:: ~ DURING AND IMMEDIATELY

FOLLOWING SURGE CURRENT
~ ;80 INTERVAL.
wo- PEATED UNTIL JUNCTION
<rZ
,W 60 Hz TEMPERATURE HAS RETURNED
TO STEADY-STATE
~ ~60 RATED VALUE.
~a I
ww
'" 0- 50 Hz
g:; ~ 40
"'~
" Z
~ 0
20
468 468 468

10 100 1000
92SS-3910 R3
o 0.5 1.5 2 2.5 3
POSITIVE OR NEGATIVE INSTANTANEOUS ON-STATE VOLTAGE {vT)-V
92CS-1502lRl
Fig. 6-0scilloscope display for measurement of gate-.controlled turn

on time (tgt).
RFI FILTER
r------l
I LF
*RCA I
TRIAC t
lSEE I CF
TABLE) 1
o I
FOR INDUCTIVE LOADS

0' TO TERMINALS C AND
D. RESPECTIVELY
1.$: 2W 120v
" FOR PHOTOCELL CONTROL Cs 0.06B ~F I200V

TO TERMINALS A AND e, 1.2 Kn
RESPECTIVELY
e' PHOTOCELL
RFI FILTER
AC
ACA
INPUT C, C2 A, A2 A3 CF'
ltvp.l TYPES
VOLTAGE I~P~)
120 V 0.1 ~F 0.1 ~F 100 Kn 2.2 Kn 15 Kn 0.1 ~F T28508
100 ~H
60 H, 200 V ,OOV ~w ~w ~w 200V
240 V 0.1 ~F 0.1 ~F 250 Kn 3.3 Kn 15 Kn 0.1 ~F
50 H, 400V ioo V ,W ~w ~w 200 ~H 400 V
T28500
240 V 0.1 ~F 0.1 ~F 200 Kn 3.3 Kn 15 Kn 0.1 ~F

60 H, 400 V 'OOV ,w I ~w ~w 200 ~H 400 V T28500
6 80.01 6 80.1 6 81.0
POSITIVE OR NEGATIVE DC GATE-TRIGGER CURRENT tIGTI-A
92SS-31B5R2
Fig. 11 - Gate-pulse characteristics for a/l triggering modes.
-40 20 40
CASE TEMPERATURE (TC)- C
50 100 150 200 250 300 350

DC GATE-TRIGGER CURRENT tI.GTl-mA
UC$-170U
INCHES MILLIMETERS
A 0160 0190 407 482

CHAMPFER
~L ~H=OPTIONAL \' ""1

0025
0012
0040
0.020
064
031
102
051
0045 0.055 1.143 1 397
SEATlNGPlANE ~ + "2
15.74
fT D
E
0.575
0.395
0.600
0.410
14,61
10.04 10.41
F TEMPERATURE
.
MEASUREMENT E1 0.365 0.385 928 977
POINT
E2 0300 0.320 7.62 812
5.58
~"l,,~
0180 0220 4.57
'1 0.080 0120 2.03 304

F 0020 0.055 0.51 139
H 0.235 0.265 5.97 673
!.-i
_____T L 0500 12.70 -
-
,-'I L1
oP 0141
0.250
0.145 3582
635
3683
l~ I. b}
Q 0040 0.060 102 1.52
Z 0.100 0.120 2.54 304
Lead No.1 - Main Terminal 1

Lead No.2 - Main Terminal 2
Lead No.3 Gate
Mounting Tab - Isolated

Fig. 16 - Suggested mounting hardware.

OOC05LlO Thyristors
Solid State 2N5571 2N5573 T4120B
Division 2N5572 2N5574 T4120D
T4100M T4110M T4120M
Main
Terminal 1
r., . :.
Gate
For 120-V Line Operation - 2N5571, 2N5573, T4120B (40802)**
For 240-V Line Operation - 2N5572, 2N5574, T4120D (40803)**
l..
~
R~~,;I
For High-Voltage Operation - T4100M, T4110M, T4120M
~~ (40797,40798,40804)**
Features:
2N5571 2N5573 T4120B
2N5572 2N5574 T41200 di/dt Capability =150 A/ps Low On-State Voltage at High
T4100M T4110M T4120M Shorted-Emitter Center-Gate Design Current Levels
Press-fit Stud Isolated-stud
Low Switch ing Losses Low Thermal Resistance
These ReA triacs are gate-controlled, full-wave silicon ac These triacs are intended for control of ac loads in applica-
switches. They are designed to switch from an off-state to an tions such as heating controls, motor controls, arc-welding
on-state for either polarity of applied voltage with positive equipment, light dimmers, and power switching systems.
or negative gate triggering voltages.
MAXIMUM RATINGS, A bsolu teMaximum Values:
For Operation with Sinusoidal Supply Voltage at Frequencies up to 2N5571 2N5572 T4100M
50160 Hz and with Resistive or Inductive Load. 2N5573 2N5574 T4110M
*REPETITIVE PEAK OFF-STATE VOLTAGE: T4120B T4120D T4120M
Gate open. T J = -65 to 1000 C . VOROM 200 400 600 V
*RMS ON-STATE CURRENT (Condur.tion angle = 3600):
Case temperature ITIRMS)
T C= 80 C I Press-fit & stud types) 15 A
= 750 C (I solated-stud types) 15 A
For other conditions See Fig. 3
ITSM
For more than one cycle of applied principal voltage ......... See Fig. 4 ----
RATE..QF-CHANGE OF ONSTATE CURRENT: dildt
VOM= VOROM, IGT = 160mA, t, = 0.1 ps ISee Fig. 131 . 150 Alps
PEAK GATETRIGGER CURRENT:
IGTM
For 1 J.l.s max., See Fig. 7. 4 A
*GATE POWER DISSIPATION:
PEAK IFor 1 ps max. IGTM -:; 4 A: See Fig. 71 ,. PGM 16 W
AVERAGE . . PGIAV) 0.5 W
*TEMPERATURE RANGE:
Storage . Tstg -65 to 150 ___ c
Operating ICasel . . . TC -65 to 100 ___ OC
*TERMINAL TEMPERATURE (During soldering): TT
225 c
* In accordance with JEDEC registration data format IJS-14. RDF 2) filed for the JEDEC 2NSeries) tYpes .
For either polarity of gate voltage (VGI with reference to main terminal 1.
.. For temperature measurement reference point, see Dimensional Outline.
_ ..........
For All Types
CHARACTERISTIC SYMBOL UnlessOtherwise Specified UNITS
I Min. Tvp. Max.

PeakOff-State Current:
Gate open, TJ = 1000 C, VDROM = Max. rated value 'DROM - 0.2 2 mA
Maximum On-5tate VOltar,::'
For iT = 21 A (peak). C = 250 C . . ..... . ... VTM - 1.4 1.8 V
Gate open, Initial principal current = 500 mA (DC), vD = 12V:
TC=250C .... - 20 75
IHO mA
TC = -650 C .. .. . . ..... - 75 300
For other case temperatures .. . . . . . . . . ... See Fig. 6
For vD = VDROM, IT(RMSI = 15 A, commutating
di/dt = 8 Alms, gate unenergized, (SeeFig. 74):
2 10 -
TC = 800 C (press-fit & stud typesl dv/dt V//ls
= 750 C (Isolated-stud) . . ........ . .... 2 10 -
Critical Rate-of-Riseof Off-State Voltage:'

For vD = VDROM, exponential voltage rise,gate open,
TC = 1000 C:
2N5571,2N5573, T4120B . . . . . . . . . . . ... -. 30 150 -
2N5572, 2N5574, T4120D . ............... dv/dt 20 100 - V//ls
T4100M, T4110M, T4120M ...... 10 75 -
DC Gate-Trigger Current:'. Mode VMT2 VG

For vD = 12 V (DCI, 1+ positive positive - 20 50
111- negative negative - 20 50
RL =30 n,
1- positive negative - 35 80
TC = 250 C
Mode IGT mA
VMT2 VG
For vD = 12 V (DC), 1+ positive positive - 75 150
RL =30n, III' negative negative - 75 150
TC = -650 C
,- positive negative - 100 200
For other case temperatures .. . ........... See Figs. 8 & 9
DC Gate-Trigger Voltage:'.
For VD = 12 V(DC). RL = 30 n,
TC = 250 C . . . . . . . . . . . - . . . . . . . ., . .... . - 1 2.5
TC = -650 C ........ . . . . . . . . . . . . . .... . VGT
- 2 4 V
t=or other case temperatures ............. See Fig. 10
For VD = VDROM, RL = 125 n, TC = 1000 C 0.2 - -
Gate-Controlled Turn-Dn Time:
(Delay Time + Rise Timel
For vD = VDROM, IGT = 160 mA, tr = 0.1 /lS,
iT = 25 A (peakl, TC = 250 C (SeeFigs. 77 & 751 tgt - 1.6 2.5 /lS
Thermal Resistance:
Junction-ta-Case:
Steady-State. ..... .. - ...... . ........ ROJC - - 1
Transient .. ........ _ ...... ...... . ...... . See Fig. 12
oCNJ
Junction-to-lsolated Hex (Stud, see Dim. Outline):
Steady-State ... .. . . ..... . - ...... ROJIH - - 1.1
* In accordance with JEDEC registration data format (JS14. RDF 2) filed for the JEDEC (2N..seriesl types.
, For either polarity of main terminal 2 voltage (VMT2) with reference to roain terminal 1.
For either polarity of gate voltage (VG) wit~ reference to main terminal 1.
25
;0
I
z
0 20
i=
<t
~
15 15
'"
~
~ 10
t!i
;:
~
CURRENT WAVEFO RM: SINUSOIDAL

1
Wu
lOAD: RESIST IVE OR INDUCTIVE
CONDUCTION ANG lE = 360<1
CASE TEMPERATU RE: MEASURED
SHOWN ON DIM ENSIONAl
AS
OUTLINES
o
F'~Bml
180 \JJ360
0 0
w
>-
'"in
z
~~~Db'~;~~;,!~ECURRENT
lInRMSI]
AT SPECIFIED CASE TEMP
= 15 A
GATE CONTROL MAY BE lOST

DURING AND IMMEDIATELY FOLLOWING
I I r
<n. 0 SURGE CURRENT INTERVAL
~.!. _<t100
wU
CONDUCTION
-"I +9m
ANGLE
~I
E"i
"'- OVERLOAD MAY NOT BE REPEATED
" ~",
-'!:: UNTIL JUNCTION TEMPERATURE HAS
CD
"'w
;0",
0:>
-'>-
100
PRESS-FIT a
STUD TYPES
..-
ti ~80
w-
.......
sO;;;
RETURNED
RATED
WITHIN
VALUE.
STEADY-STATE
I
"'>-
...J<90
z~ 60 ..." """-
"''''
i
0'"
"'w
:>.
::i~80
~~ f---
~O 40
:l>-
'"
\S,OlATED~S7UD TYPES "'
:>
<n
70 20
"
60
~ 0
o 5 10 15 4 6 8 to <I 6 8102 6 8103
FUll CYCLE RMS ON-STATE CURRENT [IT(RMS~-A

SURGE CURRENT DURATION - FULL CYCLES
92SS-3822RI
92S5 3823RI
Fig. 4 - Peak surge onstate current vs.

surge current duration.
CASE TEMPERATURE (TCI '" 25<1
i :::t~::.:: '-:.:l:.:;::'- .
"E- 100:;:_
>-
z_
Ww
~~
:>>-
u'"
w~
~z
~2i
zw
0>
<ni=
6 40
w .
~-
~ 20
" -70
o
60 -50 -40 -30 -20 -10 0 10 20 30 40
I 2 5 6
INSTANTANEOUS ON-STATE VOLTAGE (vT)-V CASE TEMPERATURE (Tcl- <lC
{POSITIVE OR NEGATIVE I 92LS-2142R2
Fig. 6 - DC holding current vs. case

temperature.
6
0.1
DC GATE TRIGGER CURRENT tIGTI-A
t POSITIVE OR NEGATIVE
92CS-17058
Fig. 7 - Gate trigger characteristics and Fig. 8 - DC gate-trigger current vs. case
limiting conditions for determination of temperature (1+ & 11/-modes).
permissible gate trigger aulses.
,;
z
-'>
~I
:5<> 150 ,. >- 3 MtlXIMUM
<> ~?
MtlJ(IMUM
'"
>- z
'"
>-
100
TYPICtlL
,.g
.2
TYPICAL
<>
g 50 .;,
~
0
-75 -50 -25 0 25
CASE TEMPERATURE (Tel - c
Fig. 10 - DC gate-trigger voltage vs. case

temperature.
100
Ii II I T
'"
z I, I ---1'
~
",,,, I
>-'"
'" 60
>-'"
"'-,
1
>- ~
IT I
'I", I
"'I
t;;>- 60
/
~~
>-0
zl 40
~7
orz
I
~~ V
~ 20
'l
I
468 466 468
50 100 150 200 250 300 350 10-3 10-2 10-1
DC GATE -TRIGGER CURRENT IIGT)- mA TIME AFTER APPLICATION OF RECTANGULAR POWER PULSE -SECONDS
92LS-2407RI
92CS-17062
Fig. 14-Relarionship between supply voltage Fig. 15-Relationship between off-state voltage,
and principal current (inductive load) on'state current, and gate-trigger voltage
showing reference points for definition showing reference points for definition
of commurating voltage fdv/dtJ. of turn-on time (tgt).
AC INPUT ,20V 240V 240V

VOLTAGE 60H, 6OH. SOH,
R, c, 0'15 0115 0'15

>ooV 400V 400V
I
0'15 0'15 0'15
ReA r c>
looV ,00V 'OOV
TRIAC: RS
R, ISEE I 100.<11 2001<11 2501<11
TABLEl! A,
11m ,v< ,v<
R,
221<11 3JKn 33Kn
,, R>
11m 1/2W 1/2W
I R, 15KS'l 151<n 15Kn

I RJ
11m 11m 11m
I
;"
PHOTOCEL l Rp 12Kn 121<n 121<n
CONTROL m m m
C, C, I
I o.1~F O.l~ 0'15
cs
: SNUBBER
NETWORK
>oov
,oon
400V
l00,{!
400V
,oon
r--
I RS
L FOR PHOTOCEll CONTROL
CF
11m
0'15 a
11m
l~F
11m
01",
AFI >ooV 400V 400V
FIL TEA
LF lOOjJH >oojJH >oojJH
2N5567 2N5568 2N5568

ReA TRIACS 2NSS69 2NSS70 2NSS70
T4120B T41?OD T4120D
Mounting of pressfit package types depends upon an in- center and guide the pressfit package properly into the
terference fit between the thyristor case and the heat sink. heat sink. The insertion tool should be a hollow shaft having
As the thyristor is forced into the heat-sink hole, metal from an inner diameter of 0.380 0.010 in. (9.65 0.254 mm)
the heat sink flows into the knurl voids of the thyristor and an outer diameter of 0.500 in. (12.70 mml. These di
case. The resulting close contact between the heat sink and mensions provide sufficient clearance for the leads and
the thyristor case assures low thermal and electrical resis- assure that no direct force will be applied to the glass seal
tances. of the thyristor.
A recommended mounting method, shown in Fig. 17, The pressfit package is not restricted to a single mount-
shows pressfit knurl and heatsink hole dimensions. If these ing arrangement; direct soldering and the use of epoxy ad-
dimensions are maintained, a "worst-case" condition of hesives have been successfully employed. The pressfit case
0.0085 in. (0.2159 mm) interference fit will allow press-fit is tin-plated to facilitate direct soldering to (he heat sink. A
insertion below the maximum allowable insertion force of 60-40 solder should be used and heat should be applied only
800 pounds. A slight chamfer in the heat-sink hole will help long enough to allow the solder to flow freely.
Package Employed Resistance-oelW
Pressfitted into heat sink. Mini-

sink = 1/8 in. (3.17 mm)
Soldered directlv to heat sink.

Press-Fit
ing point of 1880 C 'should be
0.1 to 0.35
used. HeatinQ time should be
freely!.
,12S13.171
Stud & DireCtly mounted on heat sink
______ 1 Isolated with or without the use of heat- 0.6
t-- 4976112.6~
4914{12.6331 . Stud 5i n k campau nd.
COPPER OR AllMlNUM HEAT SINK
Mounted on heat sink with a
0.004 to 0.006 in. (0.102 to
Stud 0.152 mm) thick mica insulating
washer used between unit and
heat sink.
Without heat sink compound 2.5
With heat sink compound 1.5
DIMENSIONAL OUTLINE FOR TYPES DIMENSIONAL OUTLINE FOR TYPES

2N5573, 2N5574, T4110M 2N5571,2N5572, T4100M
REFERENCE
POINT FOR CASE
TEMPERATURE
MEASUREMENT
REFERENCE
POINT FO R CASE
TEMPERATURE
MEASUREMENT
INCHES MILLIMETERS
SYMBOL NOTES
MIN. MAX. MIN. MAX.
A .330 .505 8.4 12.8 -

INCHES MILLIMETERS t/JO,
SYMBOL NOTES - .544 - 13.81 -
MIN. MAX. MIN. MAX. E .544 .562 13.82 14.28 -
F .113 .200 2.87 5.08 3
A - .380 - 9.65 J - .950 - 24.13 -
t/JO .501 .510 12.73 12.95 -
M .155 - 3.94 1
t/Jl - .505 - 12.83 2 N .422 .453 10.72 11.50 -
t/J2 .465 .475 11.81 12.07 t/JT 1.47
.058 .068 1.73 -
J - .750 - 19.05 t/JTl .080 .090 2.03 2.29 -
M - .155 - 3.94 1 rpW .2225 .2268 5.652 5.760 2
t/JT '.058 .068 1.47 1.73
t/JTl .080 .090 2.03 2.29 NOTE 1: Contour and angular orientation of these terminals
is optional.
NOTE 2: Pitch diameter of 1/4-28 UNF-2A (coated) threads

(ASA 81. 1-19601.
NOTE 3: A chamfer or undercut on one or both ends of
hexagonal portion is optional. 92S5-3817
T4120B, T4120D,T4120M
INCHES MILLIMETERS
SYMBOL NOTES
MIN. MAX. MIN. MAX.
A - .673 - 17.09
4>0 .604 .614 15.34 15.59
4>01 .501 .505 12.72 12.82
E .551 .557 13.99 14.14
F .175 .185 4.44 4.69
J - 1.055 - 26.79
M - .155 - 3.94
Ml .200 .210 5.08 5.33
In the United Kingdom, Europe, Middle East, and Africa, mounting- N .422 .452 10.72 11.48
hardware policies may differ; check the availability of all items 4>T .058 .068 1.47 1.73 2
shown wIth your RCA salesrepresentative or supplier. .080
4>Tl .090 2.03 2.29 2
4>T2 .138 .148 3.50 3.75 2
r/N'I .225 .2268 5.652 5.760 3
WARNING:
NOTE 1: Ceramic between hex (stud) and terminal No.3 is
The RCA isolated-stud package thyristors should be han- beryllium oxide.
dled with care. The ceramic portion of these thyristors con-
NOTE 2: Contour and angular orientation of these terminals
tains BERYLLIUM OXIDE as a major ingredient. Do not is optional.
crush, grind. or abrade these portions of the thyristors be-
cause the dust resulting from such action may be hazardous
if inhaled.
Terminal No.1-Gate
Terminal No.2-Main Terminal 1
Case, Terminal No.3-Main Terminal 2
[ID(]5LJ[J Thyristors
Solid State 2N5567 2N5569 T41218
Division 2N5568 2N5570 T4121D
T4101M T4111M T4121M
Main
Terminal 1
Main
~uf ,J
Terminal 1

~~Gale
r-~C) ~ For 120-V Line Operation - 2N5567, 2N5569, T4121B (40799)**

~ate
For 240-V Line Operation - 2N5568, 2N5570, T4121D (40800)**
For High-Voltage Operation - T4101 M, T4111M, T4121 M
W 1"
Main
.;
(40795,40796,40801)**
Terminal 2 Main Main

Terminal 2 Terminal 2
2N5567 2N5569 T4121B

Features:
2N5568 2N5570 T4121D di/dt Capability = 150 Alps Low On-State Voltage at High
T4101M T4111 M T4121M Shorted-Emitter, Center-Gate Design Current Levels
Press-fit Stud Isolated-stud
These RCA triacs are gatecontrolled, fuJI-wave silicon ac These triacs are intended for control of ac loads in applica-
switches. They are designed to switch from an offstate to an tions such as heating controls, motor controls, arc-welding

For Operation with Sinusoidal Supply Voltage at Frequencies up to 2N5567 2N5568 T4101M
50160 Hz and with Resistive or Inductive Load. 2N5569 2N5570 T4111M
T4121B T4121D T4121M
*REPETITIVE PEAK OFFSTATE VOLTAGE:
Gale open, T J = -65 10 100 C .... , ..... VOROM 200 400 600 V
*RMS ONSTATE CURRENT (Conduction angle = 3600):
Case temperature IT Cl = 85 C . ITIRMSI 10 A
For other conditions . See Fig. 3 ---
PEAK SURGE (NONREPETITIVE) ONSTATE CURRENT: ITSM
* 60 Hz (sinusoidal) 100 A
50 Hz (si nusoidall . 85 A
For more than one cycle of applied principal vottage . See Fig. 4----
RATE-OF-CHANGE OF ON-STATE CURRENT: di/dl
VDM= VOROM. IGT = 160 mA, Ir = 0.1 ps ISee Fig. 131 150 Alps
PEAK GATE-TRIGGER CURRENT:
IGTM
For 1 J.15 max.,See Fig. 7 . 4 A
*GATE POWER DISSIPATION:
PEAK I For 1 ps max .. IGTM <::: 4 A. See Fig. 71 PGM 16 W
AVERAGE , , ...... PG(AVI 0.5 w

*TEMPERATURE RANGE:'"
Storage . TsIg -651o 150--- c
-65'10 100 ___
Operati n9 (Case) . TC c
*TERMINAL TEMPERATURE (During soldering): TT
For 10 s max. (terminals and case) 225 c
* In accordance with JEDEC registration data format (JS-14, RDF 2) filed for the JEDEC (2N-Seriesl types .
.. For temperature measurement reference point, see Dimensional Outline.
At Maximum Ratings and at Indicated Case Temperature (T C' Unless Otherwise Specified
LIMITS
For All Types

CHARACTE R ISTIC SYMBOL Unless Otherwise Specified UNITS
Min. TVD. Max.

Gate open, Tj; 1000 C, VDROM; Max. rated value IDROM - 0.1 2' mA
Maximum On-State VOlta.r,::'
For iT; 14 A (peakl. C; 250 C ... ... . . ........ VTM - 1.35 1.65' V
Gate open, Initial principal current = 500 mA (DCI. VD; 12V:
TC;250C ..... . ..... . ... ... . ... . . .... - 15 30
IHO mA
TC; -650 C ........ . . ..... ... . .. . . . . ... - 75 200'
For other case temperatures ..... ... . .. . . ..... See Fig. 6

For vD ; VDROM. IT(RMS) ; 10 A, commutating
dildt ; 5.4 Alms, gate unenergized. T C = 850 C
(See Fig. 14) ............. .... dvldt 2' 5 - Vips
Critical Rate-of-Rise of OffState Voltage:'

For VD= VDROM, exponential voltage rise, gate open,
TC = 1000 C:
2N5567,2N5569, T4121B ... . ........ 30* 150 -
2N556B,2N5570,T4121D ... . . . ..... . . .. .... dvldt 20* 100 - Vips
T4101M, T4111M, T4121M ..... . ..... 10 75 -

= 12 V (DCI, 1+ positive positive - 10 25
ForvD
RL ;30n, III' negative negative - 10 25
TC ; 250 C I' positive negative - 20 40
IGT mA
Mode VMT2 VG
For vD =12V(DCI. 1+ positive positive - 45 100'
RL ;30n, III' negative negative - 45 100'
TC = -650 C I' positive negative - 80 150'
111+ negative positive - 80 150'
For other case temperatures .... .......... . See Figs. 8 & 9
DC GateTrigger Voltage:'.
For vD = 12 V(DC), RL = 30 n
TC = 250 C .... ..... . ................ . 1 2.5
TC ; -650 C ... ...... . . .. . . . . . . . . . . . .. VGT 2 4' V
I For other case temperatures . . . . . . . ....... . See Fig. 10
For vD ; VDROM, RL ; 125 n, TC = 1000 C 0.2 - -
Gate-Controlled Tur~-on Time:
For vD ; VDROM, IGT; 160 mA, tr; 0.1 J.LS,
iT ; 15 A (peak), T C ; 250 C (See Figs. 11 & 15) .... tgt - 1.6 2.5 J.LS
Thermal Resistance:
Junction-ta-Case:
.
SteadyState .. . . . . . . . . ..... . . . . . . . . ..... OJC - - I'
Transient ... . .. . . . .. . ..... . .... ........ . See Fig. 12
oCIW
Junctionto-lsolated Hex (Stud, see Dim. Outline):
SteadyState ... . .... . ..... . . ........ . . .. OJIH - - 1.1
In accordance with JEDEC registration data format (JS-14, RDF 2) filed for the JEDEC (2N-Seriesl types.
TRIGGERING MODES: ALL
100 LOCUS OF POSSIBLE TRIGGERING
E
: POINTS
I
J 125
~
'"'"=> 100
u
ffi 75
g
'">- 50
w
>-

"'g 25
0.' -75
DC GATE TRIGGER CURRENT (IGTI-A

t POSITIVE OR NEGATIVE
92CS-17058
limiting conditions for determination of temperature (1+ & 11/-modes).
permissible gate trigger pulses.
w 50
~
"'g 25
Fig. 9 - DC gate trigger current vs. case Fig. 10 - DC gate-trigger voltage vs. case
temperature (1- & 111+modes). temperature.
w 100
~
fO
.......
1-
w'"
>-
w'" 80
>-'"
fa
~~
~~ 60
~~ /
>-;)
zl 40
~7
"'z
~~ /
~ 20
"
50 100 150 200 250 300 350 468 468 468
DC GATE-TRIGGER CURRENT (IGTI-mA 10-3 10-2 10-l
92CS-17062 TIME AFTER APPLICATION OF RECTANGULAR POWER PULSE -SECONDS
92LS- 2407Rt
-v
+VOROM
OFF STATE
QUADRANT
NO,1I1
MAIN TERMINAL 2 ON
NEGATIVE STATE _ I
o 2 4 6 8 10
FUL.L-CYClE RMS ON-STATE CURRENT ~T(RMSIJ-A

9255-3902
CURRENT
lOAD:
WAVEFORM:
RESISTIVE
SINUSOIDAL
OR INDUCTIVE
..'"to
I-
~~~O~~~;~~~~\URRENT
C~E TEMP. {TC):85C
[ITtRMSU: IDA rI I
I
I I
CASE TEMPERATURE: MEASURED AS GATE CONTROL MAY BE LOST
SHOWN ON DIMENSIONAL OUTLINES z DURING AND IMMEDIATELY FOLLOWING
SURGE-CURRENT INTERVAL
~ctIOO
~I
~""i
I'.. OVERLOAD MAY NOT BE REPEATED
UNTIL JUNCTION TEMPERATURE HAS
RETURNED WITHIN STEADY-STATE
~
o.~
'" I-
V) 80
~ ~", RATED VALUE.
",-
",I- 5Oi;j-
2~ 60 -.::::: ~
0'"
z'"
_co
~U 40 - r-
~
20
"
60
~ 0
o 2.5 5 7.5 10 4 6 810 4 6 6102
FULL CYCLE RMS ON-STATE CURRENT [IT(RMSJ-A SURGE-CURRENT DURATION - FULL CYCLES
92SS-3903RI 92SS-3904RI
Fig. 4 - Peak surge onstate current vs.

surge current duration .
.. E
I;;;
0>
~~
~~200
"''''
"'0 150
a~
~I-
:J~IOO
0"
I-
U
" 50
1.0
INSTANTANEOUS ON-STATE VOLTAGE (vT)-V

Fig. 6 - DC holding current vs. case

temperature.
L
.!
.J-----------------
""J/
I
I
I
COMMUTATING
1_61161 o_LL
v~ i
I
I
I
!~
:_L_
I I
I
t-- di/dt
T:I --Li-"90~'
'TM I: POINT
I o_LJ 1_-1-- _
~ld++-tr f-- 'Ol---j
T-- :
o----L-
o !lITShl I
,-~------ _ ,:- I
L __
VGT I
~ r--'I 10"10 POINT
9ZCS-110r;1
0- ------------
.,t2CS 1!>3J;6~2
Fig. 14-Relarionship between supply voltage Fig. 15-Relarionship between off-stiJte voltage,
and prinicpal current (inductive load) on-state current. and gate-trigger volt-
showing reference points for definition age showing reference points for defi-
of commutating voltage fdv/dtJ. nition of turn-on time (rgt).
AC INPUT 12QV 240V 240V

VOL TAGE 60Hl SOH. SOH.
C, o IjJF o IjJF o IjJF

200V 400V 400V
I
o IjJF o IjJF O.lf.JF
ReA 1 C2
TRIAC: AS
looV lOOV lOOV
(SEE I AC INPUT
VOLTAGE R, l00Kn 200Kn 250Kn
TABLEl,
11m IW lW
Y R2
22Kn 33Kn 33Kn
11m 11m 1/2W
7---- J R3
PHOTOCEL Rp
15Kn
11m
12Kn
15Kn
11m
12Kn
15Kn
11m
12Kn
CONTROL m m m
o.l~F o IjJF o IjJF
cs 400V 400V
SNUBBER 200V
NETWORK ,oon l00H 'OOn
RS
11m 11m 11m
CF 01'" o l~F " IjJF

RFI 200V 400V 400V
FIL TEA
LF 200jJH 200jJH
'''''''''
2N5567 2N5568 2N556B
RCA TRIACS 2N5569 2N5570 2N5570
T412lB T4121D T4121D
Mounting of press-fit package types depends upon an sink. The insertion tool should be a hollow shaft having an
interference fit between the thyristor case and the heat sink. inner diameter of 0.380 O.OlD in (9.65 0.254 mm) and
As the thyristor is forced into the heat-sink hole, metal from an outer diameter of 0.500 in. (12.70 mm). These
the heat sink flows into the knurl voids of the thyristor case. dimensions provide sufficient clearance for the leads and
The resulting close contact between the heat sink and the assure that no direct force will be applied to the glass seal of
thyristor case assures low thermal and electrical resistances. the thyristor.
A recommended mounting method, shown in Fig. 17, shows

press-fit knurl and heat-sink hole dimensions. If these The press-fit package is not restricted to a single mounting
dimensions are maintained, a "worst-case" condition of arrangement; direct soldering and the use of epoxy adhesives
0.0085 in_ (0.2159 mm) interference fit will allow press-fit have been successfully employed. The press-fit case is
insertion below the maximum allowable insertion force of tin-plated to facilitate direct soldering to the heat sink_ A
800 pounds. A slight chamfer in the heat-sink hole will help 60-40 solder should be used and heat should be applied only
center and guide the press-fit package properly into the heat long enough to allow the solder to flow freely.
Table I - Case-to-Heat Sink Thermal Resistance for Differ-
~~g~;~~)OIA
b1
ent Mounting Arrangements.
800 LB MAX.

o Package Employed ResistanceoelW
o Press-fitted into heat sink. Mini

sink: 1/8 in. (3.17 mm).

Press-Fit
(60-40 solder which has a melt-
0.1 to 0.35
used. Heating time should be
freelyl.
Stud & Ojrectly mounted on heat sink

Isolated- with or without the use of heat- 0.6
0.125 (3.171 Stud sink compound.
.- 1
~
0.4960
0.4940
(122
(12.54) Stud
0.004 to 0.006 in. (0.102 to
0.152 mm) thick mica insulating
COPPER OR ALUMINUM IiEAT SINK washer used between unit and
heat sink.

2N5567,2N5568, T4101M 2N5569,2N5570, T4111M
REFERENCE INSULATING
POINT FOR CASE MATERIAL -~
TEMPERATURE
TER~MINAL TERMINAL
MEASUREMENT Nol /N02 IF
~
/1 t
J':.OI
I------ E"
MI
- -- J
INCHES MilLIMETERS
SYMBOL NOTES
MIN. MAX. MIN. MAX.
INCHES MilLIMETERS
A .330 .505 8.4 12.8 -
SYMBOL NOTES Ol - .544 - 13.81 -
MIN. MAX. MIN. MAX. E .544 .562 13.82 14.23 -
F .113 .200 2.87 5.08 3
A - .380 - 9.65 J - .950 - 24.13 -
D .501 .510 12.73 12.95 M - .155 - 3.94 1
Ol - .505 - 12.83 2 N .422 .453 10.72 11.50 -
O2 .465 .475 11.81 12.07 t/JT .058 .068 1.47 1.73 -
J - .750 - 19.05 t/JTl .080 .090 2.03 2.29 -
M - .155 - 3.94 1 W .2225 .2268 5.652 5.760 2
t/JT .058 .068 1.47 1.73
t/JTl .080 .090 2.03 2.29 NOTE 1: Contour and angular orientation of these terminals
is optional.
NOTE 2: Pitch diameter of 1/4-28 UNF-2A (coated) threads
(ASA 81. 119601.
NOTE 3: A chamfer or undercut on one or both ends of
hexagonal portion is optional.
T4121B, T4121D, T4121M
INCHES MilLIMETERS
SYMBOL NOTES
MIN. MAX. MIN. MAX.
A - .673 - 17.09
1>0 .604 .614 15.34 15.59
1>01 .501 .505 12.72 12.82
E .551 .557 13.99 14.14
F .175 .185 4.44 4.69
J - 1.055 - 26.79
M - .155 - 3.94
In the United Kingdom, Europe, Middle East, and Africa, mounting Ml .200 .210 5.08 5.33
hardware policies may differ; check the availability of all items N .422 .452 10.72 11.48
shown with your ReA salesrepresentative or supplier. 1>T .058 .068 1.47 1.73 2
.pTl .080 .090 2.03 2.29 2
Fig. 18 - Suggested mounting arrangement for stud and 1>T2 .138 .148 3.50 3.75 2
I/1N .225 .2268 5.652 5.760 3
isolated-stud package types.
WARNING:
The RCA isolated-stud package thyristors shou Id be han- NOTE 1: Ceramic between hex (stud) and terminal No.3 is
beryllium oxide,
tains BERYLLIUM OXIDE as a major ingredient. Do not NOTE 2: Contour and angular orientation of these terminals
is optional.
crush, grind, or abrade these portions of the thyristors be-
if inhaled.
Terminal No.1-Gate
OOCD5LJD Thyristors
T4103 T4104 T4105
Solid State
Division
T4113 T4114 T4115
Series
400-Hz, -6,10, & 15-A Silicon Triacs
For 115-V Line Operation - T4103B (40783)-, T4104B (40779)-,
T4105B (40775)-, T4113B (40785)-,
T4114B (40781)-, T4115B (40777)-
For 208-V Line Operation - T4103D (40784)-, T4104D (40780)-,
T4105D (40776)-, T4113D (40786)-,
T4114D (40782)-, T4115D (40778)-
et\Iumbers in parentheses (e.g. 40783) are former ReA type numbers.
T4103 Series T4113 Series Features:

RMS On-State Current -
IT(RMS) = 6 A: T4105B, T4105D, T4115B, T4115D
10 A: T4104B, T4104D, T4114B, T4114D,
15 A: T4103B, T4103D, T4113B, T4113D
di/dt Capability = 150 A//ls Commutating dv/dt Capability
Shorted-Emitter Center-Gate Design Characterized at 400 Hz
These ReA triacs are gatecontrolled fullwave silicon ac V RMS sine wave and repetitive peak off state voltages of
switches. 200 V and 400 V.
The devices are designed to switch from an offstate to an These triacs exhibit commutating voltage (dv/dtl capability
onstate for either polarity of applied voltage with positive or at high commutating current (di/dt). They can also be used
negative gate triggering voltages. in 60Hz applications where high commutating capability is
They are intended for operation up to 400 Hz with resistive required.
or inductive loads and nominal line voltages of 115 and 208
MAXIMUM RATINGS.AbsoluteMaximum l'aluc.c
T4103B T4113B T4103D T41130
For Operatiun H";tl1 Sinusoidal SUPP/l' Volla~e o{ Frequendes
I"duel;"e Luau.
lip 1(1 -IO(J Hz DUel \\'itll Rcsi\{il'e or
T4104B T4114B I T4104D T41140
T4105B T4115B T4105D T4115D
REPETITIVE PEAK OFF-8TATE VOLTAGE:'
VOROM
G,le open. TJ = 50 10 100('
RMS ON-8TATE CURRENT (Conduction angle 360):
Ca,c tempcT3ture
0
Te = 90 e (T4105B, T4105D, T4115B, T4115D) 6 A
= M50e (T4104B, T4104D, T4114B, T4114D) 10 A
= MOoe (T4103B, T4103D, T4I13B, T4113D) 15 A
for other l'ondition, See Fig. ]
PEAK SURGE (NONREPETITIVE) ON-8TATE CURRENT:
For one l'Yl'lc of applied principal voltage ITSM
400 Hz hinu\oidal) 200 A
60 Hz ('\inu\oidal) .. 100 A
For more than one l'ydc of applied prim:ipal voltage See Fig. 4
RATE-QF-CHANGE OF ON-8TATE CURRENT: di)dl
VDM = VDROM. ICT =160mA. Ir = 0.1 ,l< (SceFig. iJl 150 A/"s
PEAK GATETRIGGER CURRENT:'
IGTM
For I ,l< m" .. (See Fig. 7) . 4 . A
PEAK (For I ." max .. IGTM :=;4 A. See Fill. 7) PGM 16 W
AVERAGE
PG(AV) 0.2 w
TEMPERATURE RANGE:
Storage Ts1g -50 10 150 0('
Opera ling (("""). T(' 0('
50 10 100
TERMINAL TEMPERATURE (Duri'l! ""ldeTing):
For 10'\ ma'. (terminals and case) 225 c
TT
For either polarity of gate voltage (VG) with reference to main terminal I .
. For temperature measurement reference point, see Dimensional Outline.
LIMITS
CHARACTERISTIC SYMBOL ALL TYPES UNITS
Min. Typ. Max.

Gate open, TJ = 1000C, VDROM = Max. rated value. IDROM - 01 2 mA
For iT = 21 A (peak), TC = 25 C. VTM - 1.4 18 V
Gate open, Initial principal current = 500 mA (DC), vD = 12 V,
TC=250C IHO - 20 75 mA
For other case temperatures See Fig. 6
For vD = VDROM, IT(RMS) = rated value, gate unenergized, (See Fig. 14):
Commutating di/dt = 21.4 Alms, TC = goo C
T4105B, T4105D, T4115B, T4115D 5 10 -
Commutating di/dt = 36 Alms, TC = 85 C dv/dt V/}.'S
T4104B, T4104D, T4114B, T4114D 5 10 -
Commutating di/dt = 533 Alms, TC = 80 C

T4103B, T4103D, T4113B, T4113D 5 10 -
CriticalRate-of-Rise of Off-State Voltage:'
For vD = VDROM, exponential vol tage rise,
gate open, TC = 1000 C dv/dt 30 150 - V/}.'S
DC Gate-Trigger Current:'t Mode VMT2 VG
---
For vD = 12 V (DC), 1+ positive positive - 20 50
RL = 30 n. and 111- negative negative IGT - 20 50 mA
TC = 25 C 1- positive negative - 35 80
III + negative positive - 35 80
For other case temperatures. See Figs 8 & 9

DC Gate-Trigger Voltage:'t
For vD = 12 V(DC), RL = 30n.
For other case temperatures.
TC - 25C. VGT -
Je
1
Fig. 10
I
2.5 V
For vD = VDROM, RL = 125~l TC = 100C 02 - -

For vD = VDROM, IGT = 160mA, tr = 0.1 }.'S, tgt
iT = 25A (peak), TC = 250C. (See Figs. 11 & 15) - 1.6 25 }.'S
Thermal Resistance
Steady-State (Junction-to-Case) 8J-C - - 1 C/W
Transient (Junct ion-to-Casel. See Fin 12
Steady-State (Junction-to-Ambient). 8J-A - - 33 C/W
25
3:
z
I ....
0 20
0::
it ..~.
i2is 15
'"li
:i' 10
w
'g"
"
o 5 10 15 20 25 30
FULL-CYCLE RMS ON-STATE CURRENT [ITlRMS1J- A
92LS-2139R2
r----,;:C"U;;CRR;;;E;;;N:;;T;-W~
V:;;E"FC;;O:;;P.-;;M;-'
7;5;;'
N"'U"'5:;;0"IO"."L---r--------,
LOAD: RESISTIVE
CONDUCTION
OR INDUCTIVE
ANGLE = 360
-1
11/-1\j8r 8m1
,'-'-
w'-'
<n.
o 180' ,JJ360'
w'-'
-'!::
al 100
w CONDUCTION ANGLE
,"",
-'o~...
<8r +8m
..J<90
",
"'W
~Q.
:::i~80
x ...

'"
60
FUL~ CYCLE RMS ~N-STATE CU~ORENT [IT(R~SiJ-A 92C5-17055
SUPPLY fREQUENCY: 60/400 Hz

LOAD RESISTIVE
RMS ON-STATE CURRENT [1T(RMSI} ..
200 RATED VALUE AT SPECIFI ED TEMP
-lIDO :::
GATE CONTROL MAY BE LOST .~....-~
fOLLOWING SL:RGE CURRENT
INTERVAL.
UNTil JUNTION TEMPERATURE
HAS RETURNED TO STEADY-STATE
RATED VALUE
468 468 I 2
10 100 loao
INSTANTANEOUS ON-STATE VOLTAGE IVTI-V
SURGE CURRENT DURATION-FULL CYCLES I POSITIVE OR NEGATIVE 1
92CS-17056
TRIGGERING MODES: ALL
LOCUS OF POSSIBLE TRIGGERING
POINTS
8
0.1
DC GATE TRIGGER CURRENT {IGTl-A
(POSITIVE OR NEGATIVE
92CS-17058
determination of permissible gate trigger pulses.
92CS-17059
Fig. 8 - DC gate-trigger current vs. case temperature.

(/+ & 11/- modes).
..
E
I
~
0-
~ ,;
~ 200 z 4
o
...
>
'"
~ 150 H3
... '"
'" 0->
'"
0-
100 ..
z-

!;<
'"o
'oo" 50
0-
"'~
-SO -25 0
CASE TEMPERATURE (TC)--C
100
'"z
u ,-
I!
",,,,
... ~
~~ BO
!i
>/",
"'I
:;; ... 60
~~ /
... ~
zl 4
",0
u'l
"'z
0."
"'0 V
~ 20,...-
"l
468 468 468

10-3 10-2 10-1
TIME AFTER APPLICATION OF RECTANGULAR PCY'NER PULSE -SECONDS
92LS~2407RI
I
I
I
I I
I I
----r----'
VD I
I
I
I COMMUTATING
DJ-----------------
I-dildl
I
I
I
COMMUTAT:NG
1- di/dl
I
I
I
I
T
I
I CQMMUTATING--
I d ~/dt
I
I
Fig. 14 - Relationship between supplV voltage and principal current

commutating voltage (dv/dtJ.
I
I I
Vo I I
I I
o_L~ LL __
I-rl:
I I I
I I r
RFI FILTER
I I I r-----, r----l
I 1 LF
RCA 1 100 n
T : I"'" 90% POINT TRIAC I 1/2 W
: CF
In I I I I
0-.l~1 __ - I-l--- I
I
I I
L J
~'d
I
-i---L-t,
I I
f-----J
SNUBBER NETWORK FOR
f---'Q' --i INDUCTIVE LOADS OR WHEN
COMMUTATI NG VOLTAGE (dv/dt)
I
,1- ~

"GT
1
I
.--IO'fo POINT
CHARACTERISTIC IS EXCEEDED.
o_L - -------- -
92CS-13366R2
Fig. 15 - Relationship between off'stare voltage, on-state current,

and gate-trigger voltage showin~ reference points for defini-
tion of turn-on time (tgt).
Mounting of press-fit package types depends upon an center and guide the press-fit package properly into the heat
interference fit between the thyristor caseand the heat sink. sink. The insertion tool should be a hollow shaft having an
As the thyristor is forced into the heat-sink hole, metal from inner diameter of 0.380 O.ClO in. (9.65 0.254 mm) and
the heat sink flows into the knurl voids of the thyristor case. an outer diameter of 0.500 in. (12.70 mm). These di-
The resulting close contact between the r:eat sink and the mensions provide' sufficient clearance for the leads and assure
thyristor case assures low thermal and electrical resistances. that no direct force will be applied to the glass seal of the
thyristor.
A recommended mounting method, shown in Fig. 17,
The press-fit package is not restricted to a single
shows press-fit knurl and heat-sink hole dimensions. If these
mounting arrangement; direct soldering and the use of epoxy
dimensions are maintained, a "worst-case" condition of
adhesives have been successfully employed. The press-fit case
0.0085 in. (0.2159 mm) interference fit will allow press-fit
is tin-plated to facilitate direct soldering to the heat sink. A
insertion below the maximum allowable insertion force of
60-40 solder should be used and heat should be applied only
800 pounds. A slight chamfer in the heat-sink hole will help
long enough to allow the solder to flow freely.
Table 1 - Case-to-Heat Sink Thermal Resistance for Different
Mounting Arrangements.

Package
Employed Resistance-oC/W
Pressfitted into heat sink.

(Minimum Required thickness 0.5
of heat sink = 1/8 in.

Press-Fit (60-40 solder which has a melt-
ing point of 1880 C shou!d be
used. Heating time should 0.1 to 0.35
be sufficient to caus~ solder
.125(3.17)
to flow freely).

______ ---.1r .4976 (l2.6~
.4974112.6331 .
with or without the use of heat- 0.6
sink compol:nd.
COPFR OR ALlIlilIlNUM HEAT SINK
Mounted on hea~ sink with a
Stud
0.004 to 0.006 in. thick I'tlica
insulating washer used be-
tween unit and heat sink.
In the United Kingdom, Europe, ,Middle East, and Africa, mounting-

hardware policies may differ: check the availability of all items
shown wIth your ReA sales representative or supplier.
DIMENSIONAL OUTLINE FOR DIMENSIONAL OUTLINE FOR
T4103, T4104, AND T4105 SERIES T4113, T4114, AND T4115SERIES
REFERENCE
t:'.m:~~~~ERM~N::m~~~~~
POINT FOR CASE
-17 TERrN~I~AL
INSULATING
MATERIAL
"~'~."
No I
--
/NO 2
4P No.1 , 1. 4P
.wr
1,
02
qp:j:, 1. I f ~ L
REFERENCE
.T,
-- -POINT FOR CASE
.T = ==oj- 1 MI
.0 -J
M I
1----.01 II TEMPERATURE
MEASUREMENT
L
-A
~
>--A--1 ... ~E . J -f'
TERMINAL No.2 I-- - J ~---I SEATING PLANE
INCHES MILLIMETERS INCHES MILLIMETERS

SYMBOL NOTES SYMBOL NOTES
MIN. MAX. MIN MAX. MIN. MAX. MIN. MAX.
A - 380 - 965 A 330 505 8.4 12.8 -
D 501 510 1273 1295 D, - 544 - 1381 -
"D, - .505 - 12.83 2 E 544 562 1382 1428 -
D, 465 .475 1181 12.07 F 113 200 2.87 5.08 3
J - .750 - 19.05 J - .950 - 24,13 -
M - .155 - 3.94 1 M - .150 - 3.94 1
",T 058 068 147 173 N 422 453 1072 1150 -
.080 .090 2.03 2.29 T 058 .068 147 173 -
" T,
",T, .080 .090 2.03 2.29 -
NOTE 1: Contour and angular Ollentatlon of these terminals IS .2225 2268 5.652 5.760 2
optional.
"W
NOTE 2: Outer diameter of knurled SUI face.
IS optional.
NOTE 2: Pitch diameter of ',028 UNF2A (coated) threads
(ASA B1. 1-1960).
NOTE 3: A chamfer or undercut on one or both ends of hexagonal
pOItioo is optional.
Terminal No. I-Gate

Terminal No.2-Main Terminal I
On special request, isolatedstud package triacs are also

available.
[Kl(]3LJD
Solid State
Division T6401 T6411 T6421
Series
Main Main
Main Terminal 1 Terminall
Terminal 1
Press-Fit, Stud, and Isolated-Stud Type Packages
Main
Terminal
T6401
2
Series
Main
Terminal 2
f"I
.....
Main
Terminal 2
For 120-V Line Operation - T6401 B (40660)*, T6411 B (40662)*,
Features:
T6421B (40805)*
For 24D-V Line Operation - T6401D (40661) *, T6411D (40663)*,
T6421D (40806)*
For High-Voltage Operation - T6401M (40671)*, T6411M (40672)*,
T6421M (40807)*
T6411 series T6421 Series

Press-fit di/dt Capability = 100 Alils Low On-State Voltage at High
Stud Isolated-stud Shorted-Emitter Center-Gate Design Current Levels
These RCA triacs are gate-controlled full-wave silicon ac These triacs are intended for control of ac loads in applica-
switches. They are designed to switch from an offstate to an tions such as heating controls, motor controls, arc-welding
or negative gate triggering voltages. They can also be used in air-conditioning and photocopying
equipment.
For Operation with Sinusoidal Supply Voltage at Frequencies up to
T6401B T6401D T6401M
50160 Hz and with Resistive or Inductive Load. T6411B T6411D T6411M
REPETITIVE PEAK OFF-STATE VOLTAGE: T6421B T6421D T6421M
Gate open, T J ; -50 to 1000 C VOROM 200 400 600 V
RMS ON-STATE CURRENT (Conduction angle = 3600):
Case temperature
ITIRMSI
TC; 650 C (Press-fit typesl 30 A
; 600 C (Stud typesl . 30 A
; 550 C (Isolated-stud typesl
30 A
For other conditions _____ See Fig_ 3 ____
ITSM
For one cvcle of applied principal voltage
60 Hz (sinusoidal) _ . 300 A
For more than one cycle of applied principal voltage . See Fig_ 4 ----
RATE-QF-CHANGE OF ON-STATE CURRENT:
VOM; VOROM, IGT; 200 mA, tr ; 0.1 115 (See Fig_ 731 _ .
PEAK GATE-TRIGGER CURRENT:
For 1 J1smax.,See Fig. 7 .....
PEAK (For 1 Ils max., IGTM -0::; 4 A: See Fig. 71 ... ", .. , .. ----- 40 ----- W
AVERAGE ------0.75----- W
TEMPERATURE RANGE:
Storage .
Operating (Case) . . ..............
For temperature measurement reference point, see Dimensional Outline.
LIMITS
CHARACTE R ISTIC
I SYMBOL
For All Types
UNITS
Unless Otherwise Specified
Min. Tvo. Max.

Peak OffState Current:
Gate open, TJ = 1000 C, VDROM = Max. rated value IDROM - 0.2 4 mA

For iT = 10:) A (peakl. TC = 250 C ................ VTM - 2.1 2.5 V
Gate open. Initial principal current = 150 mA (DCl. vD = 12V:
TC=250C ..............
For other case temperatures .... .
..... . . ......
...... . ....
IHO - 25
See Fig. 6
I 60 mA
Critical Rate-ofRise of Commutation Voltage:.

For VD = VDROM, 'T(RMS) = 30 A,commutating
di/dt = 16 Alms, gate unenergized, (See Fig. 14):
TC = 650 C (Press fit types) ..... . .......... 3 20 -
= 600 C (Stud types) ........ . .......... dv/dt 3 20 - V/lls
= 550 C (lsolatedstud types) .............. 3 20 -
Critical Rate-of-Rise of OffState Voltage:'
For VD = VDROM, exponential voltage rise, gate open,
TC = 1000 C:
T6401B,T6411B. T6421B .......... . ... . ... 40 200 -
T6401D, T6411D. T6421D .
. .. ..... . ....... dv/dt 25 150 - V/lls
T6401M, T6411M. T6421M ..... . ... 20 100 -

1+ positive positive - 15 50
For vD = 12 V (DC),
111- negative negative - 20 50
RL =30 n,
I' positive negative IGT - 30 80 mA
TC = 250 C
For other case temperatures ..... .. . .. . . ........ See Figs. 8 & 9
DC GateTrigger Voltage:'.
For VD = 12 V(DCl. RL = 30 n,
TC = 250 C .... ............ . . ....... - 1.35 2.5
VGT V
For other case temperatures ........ . . . ... . See Fig . 10
For VD = VDROM, RL = 125 n, TC = 1000 C 0.2 - -
Gate-Controlled Turn-Gn Time:
For vD = VDROM, IGT = 200 mA, tr = 0.1 IlS.
iT = 45 A (peak), TC = 250 C (See Figs. 11 & 15) .. tgt - 1.7 3 IlS
Thermal Resistance, Junction-ta-Case:

Steady-State
Pressfit types ............ ...... . ...... . - - 0.8
Stud ... . ............. . ...... ....... . J-C - - 0.9
Transient (Press-fit & stud types I .. ..... . ....... . . See Fig. 12
oc/w
Thermal Resistance. JunctiontoHex (Stud. See Dim. Outline):

Steady-State (Isolated-stud typesl ..... .... . ....... 0JIH - - 1
50
QUADRANT
No.1
MAIN TERMINAL 2
POSITIVE
-ON
STATE
IHO
10 20 30 40 ~o 60
FULL-CYCLE RMS ON-STATE CURRENT [IT(RMSI]-A
9255-3810
LOAD: RESISTIVE
WAVEFORM ~SINUSO IDAL
i'
1 fURRENT
LOAD: RESISTIVE OR INDUCT IVE ~ t8I~ 8ml ..."'
RMS ON-STATE
SPECIFIED
CURRENT
CASE TEMP.
[InRMS)]-30A AT
I CONDUCTION ANGLE" 360

Ii : 300
~
CASE TEMPERATURE: MEASURED
o ~ IIIIII1 II IT
V
AS SHOWN ON DIMENSIONAL OUTUNES 180 60.
...
~IOO ~
I
250
.\. GATE CONTROL MAY BE LOST
CONOUCTION ANGLE SURGE CURRENT INTERVAL.
"
~ 90
'Sr +Sm
~1 " ... OVERLOAD MAY NOT BE REPEATED
UNTIL JUNCTION TEMPERATURE HAS
i'...!i PRESS-FIT TYPES
~200
60,Hz RETURNED TO STEADY-STATE
RATED VALUE
~f ~
B 80 STUD TYPES a:~ 15
~
"'.:
70
~i
-::>
150Hz
.....
~
<
5
~ 50 ""'
Q.
o 10 20 30 40
FULL CYCLE RMS ON-STATE CURRENT [IT(RMS1] -A I 68 468 4 6 ~03
10 102
92SS-3812R2
SURGE CURRENT DURATIO"-J -FULL CYCLES
92SS-3815R2
Fig. 4 - Peak surge on-state current vs.

surge current duration.
20
0.5 I 1.5 2 2,5 -70 -60 -50-40 -30 -20 -10 0 10 20 30 40
INSTANTANEOUS ON-STATE VOLTAGE (vTl-V CASE TEMPERATURE (TC )_OC
(POSITIVE OR NEGATIVE) 9255-3811
Fig. 5 - On-state current vs. on-state Fig. 6 - DC holding current vs. case
voltage. temperature.
I RING MOO ES: ALL
1008 ENCLOSED AREA INDICATES LOCUS OF
6 I E TRI RIN I T
limiting conditions for determination of temperature (1+ & 11/-modesl.
permissible gate trigger pulses.
o o
-70 -60 -50 -40 -30 -20 -10 0 10 20 30 40 -70 -60 -so -40 -30 -20 -10 0 10 20 30 40
CASE TEMPERATURE (TCI-OC CASE TEMPERATURE (TC)_OC
Fig. 9 - DC gate-trigger current vs. case Fig_ 10 - DC gate-trigger voltage vs. case
temperature (1- & 11/+modesl. temperature.
"'Uz 100 I I
"'~
1, ;"1'"
~~ 80
II V
1-'
>-<l
0:> /'
~ffi
0-:<
"'0- 60
"-"'<l
0", /'
o-U ,/
z,
"'0
Uo- 40
cr'
"'z
"-0
E; 20
----
~ I
0
468 468
I
468
50 100 ISO 200 250 300 350 400 450
10-3 10-2 10-1 I
DC GATE-TRIGGER CURRENT (IGT)-mA TIME AFTER APPLICATION OF RECTANGULAR POWER PULSE -SECONDS
92LS-2263RI
TL
J-----------------
,
/--d1/dt
0--- ~Es~-_~
~ r--"
_
Fig. 14 - Relationship between supply voltage Fig. 15 - Relationship between off-state voltage,
and principle current (inductive load) on-state current, and gate-trigger vo/t-
showing reference points for definition age shoWing reference points for defi-
of commutating voltage (dv/dr). nition of rum-on time (fgt).
AC INPUT '20V 2AOV NOV

VOLTAGE 60 60 50'"
C, O.ljlf 0.'1'f O.ljlf

200V 4001/ 400V
,, O.ljlf 0.11'f 0.11'f
c2
ReA , lOOV l00v l00V
TRIAC I RS
ISEE I l00Kfl 200Kfl 250Kfl
Al
TABLE)I
,, 1IZW IW lW
2.2Kfl 3.3Kfl 3.3Kfl

, Cs
,, A2 1IZW 1IZW 1IZW
15K{l 15Kfl 15Kn

Lf __ ..J L -.J
A3 1IZW 112W 1IZW
O.ljlf 0.11'f O.ljlf

Cs 200V 400V 400V
SNUBBER NETWORK FOR INDUCTIVE SNUBBER
LOADS DR WHEN COMMUTATING VOLTAGE NETWORK
(ctv/dtl CHARACTERISTIC IS EXCEEDED. ,oon loon ,oon
AS 1IZW 1IZW 1IZW
O.ljlf 0.11'f O.ljlf

CF
AFI 200V 400V 400V
FILTER
LF IlJ01lH P<-' 200jJH
T64018 T64010 T64010

ACATRIACS T64118 T64110 T64110
T64218 T6421 0 T6421 0
Mounting of press-fit package types depends upon an in- center and guide the press-fit package properly into the
terference fit between the thyristor case and the heat sink. heat sink. The insertion tool should be a hollow shaf:t having
As the thyristor is forced into the heatsink hole, metal from an inner diameter of 0.380 0.010 in. (9.65 0.254 mm)
the heat sink flows into the knurl voids of the thyristor and an outer diameter of 0.500 in. (12.70 mm). These di
case. The resulting close contact between the heat sink and mensions provide sufficient clearance for the leads and
the thyristor case assures low thermal and electrical resis- assure that no direct force will be applied to the glass seal
tances. of the thyristor.
A recommended mounting method, shown in Fig. 11, The pressfit package is not restricted to a single mount-
shows press-fit knurl and heat-sink hole dimensions. If these ing arrangement; direct soldering and the use of epoxy ad-
dimensions are maintained, a "worst-case" condition of hesives have been successfully employed. The pressfit case
0.0085 in. (0.2159 mm) interference fit will allow press-fit is tin-plated to facilitate direct soldering to the heat sink. A
insertion below the maximum allowable insertion force of 60-40 solder should be used and heat should be applied only
800 pounds. A slight chamfer in the heatsink hole will help long enough to allow the solder to flow freely.
Package Employed ResistanceoeM
Pressfitted into heat sink. Mini

sink: 1/8 in.13.17 mm)

Press-Fit
(60-40 solder which has a melt
0.1 to 0.35
used. Heating time should be
freelvl.

Stud with or without the use of heat 0.6
sink compound.
92 LS- 2264R3
NOTE: Dimensions in parentheses are in millimeters and are derived
from the basic inch dimensions as indicated.
DIMENSIONAL OUTLINE FOR DIMENSIONAL OUTLINE FOR

T6401 SERIES T6411 SERIES
INCHES MILLIMETERS
SYMBOL NOTES
MIN. MAX. MIN . MAX.
INCHES MILLIMETERS
A .330 .505 8.4 12.8 -
SYMBOL NOTES OI - .544 - 13.81 -
MIN. MAX. MIN. MAX. E .544 .562 13.82 14.28 -
F .113 .200 2.87 5.08 3
A - .380 - 9.65 -
J .950 - 24.13 -
O .501 .510 12.73 12.95 M - .155 - 3.94 1
OI - .505 - 12.83 2 N .422 .453 10.72 11.50 -
O2 .465 .475 11.81 12.07 1.47
T .058 .068 1.73 -
J - .750 - 19.05 Tl .080 .090 2.03 2.29 -
M - .155 - 3.94 1 rpW .2225 .2268 5.652 5.760 2
T .058 .068 1.47 1.73
Tl .080 .090 2.03 2.29
NOTE 1: Contour and angular orientation of these terminals NOTE 2: Pitch diameter of 1/4-28 UNF2A Icoatedl threads
is optional. IASA 81. 11960l.
NOTE 2: Outer diameter of knurled surface. NOTE 3: A chamfer or undercut on one or both ends of
l-"",,".,,"
cv---
o
DF6B
MICA INSULATOR
.""",,,,,,'"""
AVA'LA8lE 111 P'iBI'SHED
DIMENSIONAL
T6421 SERIES
OUTLINE FOR
In the United Kingdom, Europe, Middle East, and Africa. mounting-

shown with your ReA salesrepresentative or supplier.
INCHES MILLIMETERS
SYMBOL NOTES
MIN. MAX. MIN. MAX.
A - .673 - 17.09
4>0 .604 .614 15.34 15.59
4>01 .501 .505 12.72 12.82
E .551 .557 13.99 14.14
F .175 .185 4.44 4.69
J - 1.298 - 32.96
WARNING: M .210 .230 5.33 5.84
The RCA isolatedstud package thyristors should be han Ml .200 .210 5.08 5.33
died with care. The ceramic portion of these thyristors con N .422 .452 10.72 11.48
4>T .058 .068 1.47 1.73 2
tains BERYLLIUM OXIDE as a major ingredient. Do not
Tl .125 .165 3.18 4.19 2
crush, grind, or abrade these portions of the thyristors be .138 .148 3.50 3.75 2
4>T2
cause the dust resulting from such action may be hazardous 1JN .2225 .2268 5.652 5.760 3
if inhaled.
NOTE 1: Ceramic between hex (stud) and terminal No.3 is

beryllium oxide.
Terminal No.1-Gate is optional.
NOTE 3: Pitch diameter of 1/428 UNF-2A (coated) threads
Case, Terminal No.3-Main Terminal 2 IASA B1. 119601.
[lliCIBLJD Thyristors
Solid State T6404 T6405
Division
T6414 T6415
Series

J.i Gate
For 115-V Line Operation - T6404B
T6414B
For 208-V Line Operation - T6404D
(40791)-
(40793)-
(40792)-
T6405B
T6415B
T6405D
(40787)-
(40789)-
(40788)-
T6414D (40794)- T6415D (40790)-
Features:
RMS On-State Current - Shorted-Emitter Center-Gate Design
IT(RMS) = 25A: T6405 and T6415 Series
= 40A: T6404 and T6414 Series
di/dt Capability = 100 A/ps
Commutating dv/dt Capability Characterized at 400 Hz
These ReA triacs are gate-control!ed full-wave silicon ac 208 V RMS sine wave and repetitive peak off-state voltages
switches. They are designed to switch from an off-state to an of 200 V and 400 V.
onstate for either polarity of applied voltage with positive
These triacs exhibit com mutating voltage (dv/dt) capability
at high commutating current (di/dt). They can also be used
They are intended for operation at 400 Hz with resistive in 60Hz applications where high commutating capability
or inductive loads and nominal line voltages of 115 and is required.
T6404B T6404D
T6405B T6405D
For Operation with Sinusoidal Supply Voltage at 400 Hz and with Resistive or Inductive Load. T6414B T6414D
REPETITIVE PEAK OFFSTATE VOLTAGE:' vDROM T6415B T6415D
Gate open, T J = -50 to "0 C . ........ 200 400 V
RMS ONSTATE CURRENT (Conduction Angle = 3600): IT(RMS)
Case temperature
TC = 85 C IT6405 Series) 25--- A
800 C (T6415 Series) 25--- A
700 C (T6404 Series) 40--- A
650 C (T6414 Series) 40--- A
--- See Fig.3 --
PEAK SURGE (NONREPETITIVE) ON-STATE CURRENT:
400 Hz (sinusoidal) . ---600--- A
60 Hz (sinusoidal) . ----300--- A
For more than one cycle of applied principal voltage --- See Fig.4--
RATE-OF-CHANGE OF ON-STATE CURRENT:
VDM =
VDROM, IGT 200 mA, tr =
0.1 !'s (See Fig. 15) = ----100--- AI!'s
FUSING CURRENT (for Triac Protection):
TJ = -50 to 1100 C, t = 1.25 to 10 ms ----350--- 2
A s
PEAK GATE-TRIGGER CURRENT:"
For 1 J.l.s max. (See Fig. 7) 12--- A
Peak (For 10!'s max., IGTM :<:;:4A (peak), (SeeFig. 7) ., 42--- W
Average .. . . ---- 0.75 --- W
TEMPERATURE RANGE:"
Storage . . ---50to150-- C
Operating (Case) .. . . -- -50 to 110 -- C
For 10 s max. (terminals and case) .. . . ---- 225 ---- C
* For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1.
For either polarity of gate voltage (VG' with reference to main terminal 1.
.. For temperature measurement reference point. see Dimensional Outline.
At Maximum Ratings and at Indicated Case Temperature (Tc) Unless Otherwise Specified
LIMITS
For All Types
Min. Typ. Max.

Gate open, TJ = 1100 C, VDROM = Max. rated value ............... IDROM - 0.2 4 mA
For iT = 100 A (peak), TC = 25v C: V
VTM
T6405 & T6415 Series .... . ...... . .......................... - 1.7 2.5
T6404 & T6414 Series ... . ... ..... ..................... - .... - 1.7 2
Gate open, Initial principal current = 500 mA (DC), vD = 12 V,
TC = 250 C .............................................
IHO
- 30 90 mA
For other case temperatures ............................... See Fig.6
For vD = VDROM, IT(RMS) = rated value, gate unenergized,
(See Figs.13 & 14):
Commutating d ildt = 88 Alms
TC = 850 C (T6405 Series) ............................. dvldt 2 - - V/p.s
= 800 C (T6415 Series) ............................. 2 - -
Commutating d ildt = 141 Alms
TC = 700 C (T6404 Series) ............................. 2 - -
= 650 C (T6414 Series) . . . . . . . . . . . . . ................ 2 - -
Critical Rate-of-Rise of Off-State Voltage:'
For VD = VDROM, exponential voltage rise, gate open, TC = 1100 C: dvldt V/p.s
T6405 & T6415 Series .... . ....... . ....................... 30 150 -
T6404 & T6414 Series' ....... ... . ....................... 50 200 -
DC Gate-Trigger Current:'t Mode VMT2 VG
ForvD = 12 V (DC), 1+ positive positive - 20 80
RL =30n, 111- negative negative IGT - 50 80 mA
TC = 250 C 1- positive negative - 80 120
III + negative positive - 80 120
For other case temperatures ................................. See Figs.8 & 9
DC Gate-Trigger Voltage:'t
For vD = 12 V(DC), RL = 30 n, TC = 250 C .................
For other case temperatures ................
.....
. ...............
VGT -I 2 I
See Fig. 10
3 V
For vD = VD ROM, R L = 125 n, TC = 1100 C .................... 0.2 - -

For VD= VDROM, IGT = 150 mA, tr = 0.1 J-ls, tgt
iT=60A (peak), TC= 250C (See Figs. 11 & 12) .............. , ... - 1.6 2.5 p.s

Steady-State
Press-fit types ...........................................
BJ-C
- - 0.8
oC/W
Stud .................................................. - - 0.9
Transient (Press-fit & stud types) ............................... See Fig.16
, For either polarity of main terminal 2 voltage (VMT21 with reference to main terminal 1.
t For either polarity of gate voltage (VG) with reference to main terminal 1.
10 20 30 40 50 60
FULL-CYCLE RMS ON-STATECURRENT(ITtRMS1]-A
92C5- 17950
CURRENT WAVEFORM: SiNUSOIDAL

CONDUCTION ANGLE ~ 360"
60
o 10 W ~ 40
FULL CYCLE RMS ON-STATE CURRENT fiT(RMS~ - A

L' ~ 92C5-17949
LOAD; RESISTIVE
RMS ON-STATE CURRENT [ITIRMSJ} RATED VALUE AT
SPECIFIED CASE TEMP~RATURE
600
I I I II
500
\ GATE CONTROL MAY BE LOST
SURGE CURRENT INTERVAL
",I
>~ I\. OVERLOAD MAY NOT BE REPEATED
t:........~400 UNTIL JUNCTION TEMPERATURE HAS
'\ RETURNED TO STEADY-STATE
~!:: RATED VALUE.
"' .... I"
'f z 300 I
I I
"-
z'"
0'"
~~ ..........
~ u 200
"-
" 00
~
I
~ ~ r-- t-
"
~
100
a
I I
I I
- t-
I 6 8 10 4 6 8 102
SURGE CURRENT DURATION -FULL CYCLES

<t 120
E
I
OW
r> 100
~~
>-"
CJ~
a: a: 80
'50
u'"
,,~
z>-
9~ 60
1-
u MINIMUM GATE RESISTANCE
o
I I I I I I I
UPPER LiMIT OF PERMISSIBLE
AVERAGE IDC} GATE POWER I
-50 -40 -30 -20 -10 0 ;0 20 30 40

CASE TEMPERATURE tTC )_OC 92CS-17946
Fig. 9 - DC gate-trigger current vs. case temperature (/- & /:/+

modes).
I
1 I
VD I I
1 I
o_LL I
:_L __
1 1
I 1 1
[ 1 I
TITM
o-LL--
1
:
1
-iLl - 1
I"
1
1-1----
I
I
90% POINT
~ td -i..-l-- t,
I I I
f---- tgt ---I
I
t:-
vGT 1
0- L -..---10% POINT
----------
92CS-13366R2
Fig. 12 - Relationship between off-state voltage, onstate current,

and gate-trigger voltage showing reference points for
---,
I
I
VD :VDROM
IT (RMSI: RATED VALUE AT SPECIFIED CASE TEMPERATURE
GATE OPEN

commutating voltage (dv/dtJ.
w
u
z 100
w~
VD
~~
,.'"-'
I 80
oj --- ------ -------- 0,"

~5
...
"-w
0",
I
"' .... 60
'"
...
u
Z I
wo
u ...
Ir'
wz
"-0
E
~
4 6 8
10-3 10-2 10-1 r
TIME AFTER APPLICATION OF RECTANGULAR POWER PULSE-SECONDS
92lS-2263RI
RFI FILTER
r----l ,----, LOAD
RCA I 39 n I: LF :
TRIAC I I W :: CF :
1022~F I I I
I 200V I I I
/L J L J
SNUBBER NETWORK FOR
INDUCTIVE LOADS OR WHEN
COMMUTATING VOLTAGE (dv/df)
CHARACTERISTIC IS EXCEEDED.
Mounting of press-fit package types depends upon an inter- center and guide the press-fit package properly into the
ference fit between the thyristor case and the heat sink. As heat sink. The insertion tool should be a hollow shaft having
the thyristor is forced into the heat-sink hole. metal from an inner diameter of 0.380 0.010 in. (9.65 0.254 mm)
the heat sink flows into the knurl voids of the thyristor case. and an outer diameter of 0.500 in. (12.70 mm). These di-
The resulting close contact between the heat sink and the mensions provide sufficient clearance for the leads and
thyristor caseassureslow thermal and electrical resistances. assure that no direct force will be applied to the glass seal
of the thyristor.
A recommended mounting method. shown in Fig. 18. shows The pressfit package is not restricted to a single mounting
press-fit knurl and heat-sink hole dimensions. If these arrangement; direct soldering and the use of epoxy adhesives
dimensions are maintained. a "worst-case" condition of have been successfully employed. The pressfit case is tin-
0.0085 in. (0.2159 mm) interference fit will allow pressfit plated to facilitate direct soldering to the heat sink. A 60-40
insertion below the maximum allowable insertion force of solder should be used and heat should be appl ied only long
800 pounds. A slight chamfer in the heat-sink hole will help enough to allow the solder to flow freely.
Package Employed Resistance-oelW

sink = 1/8 in. (3.17 mml

Press-Fit
ing point of 1~80 C should be
0.1 to 0.35
used. Heatinq time should be
freely) .

Stud with or v.'ithout the use of heat- 0.6
sink compound .
.125 \3.17)
-------.I-:~;~
:,'~~~~))D'A!
In the United. ~ingdom, E.urope, Middle East, and Africa, mounting-

hardware. policies may dIffer; check the availability of all items
T6404 & T6405 SERIES T6414 & T6415 SERIES
REFERENCE
POINT FOR CASE
TEMPERATURE
MEASUREMENT
INSULATING
MATERIAL 7
INCHES MILLIMETERS
~:"~:TERMINAL NO.2
I
REFERENCE
POINT fOR CASE
TEMPERATURE
r_A"3MEASUREMENT
SEATING PLANE
SYMBOL NOTES INCHES MILLIMETERS

MIN. MAX. MIN. MAX. SYMBOL NOTES
MIN. MAX. MIN. MAX.
A - 0.380 - 9.65 -
0.330 0.505 8.4 12.8 -
~ 0.501 0.510 12.73 12.95 - A
.01 - 0.544 - 13.81 -
.01 - 0.505 - 12.83 2
E 0.544 0.562 13.82 14.28 -
~2 0.465 0.475 '1.81 12.07 - 2.87 5.08 3
- F 0.113 0.200
J 0.825 1.000 20.95 25.40
M 0.215 0.225 5.46 5.71 1
J 0.950 1.100 24.13 27.94 -
M 0.215 0.225 5.46 5.71 1
.T 0.058 0.068 1.47 1.73 -
.Tl 0.138 0.148 3.51 3.75 - N 0.422 0.453 10.72 11.50 -
.T 0.058 0.068 1.47 1.73 -
NOTE 1: Contour and angular orientation of these terminals .Tl 0.138 0.148 3.51 3.75 -
is optional. oW 0.2225 0.2268 5.652 5.760 2
NOTE 2: Outer diameter of knurled surface.
NOTE 2: Pitch dIameter of 1/4-28 UNF-2A (coated) threads

(ASA B1. 1-19601.
TERMINAL CONNECTIONS NOTE 3: A chamfer or undercut on one or both ends of
No.1-Gate
No.2-Main Terminal 1
Case,No.3-Main Terminal 2
Main Terminal 1
WARNING:
(-\. Gate
~S.c.~ Main Terminal 2

The ReA isolated-stud package thyristors should be han-
On special request, isolated-stud

package triacs are also available.
M
~
tains BERYLLIUM OXIDE as a major ingredient. Do not
crush, grind, or abrade these portions of the thyristors be-
if inhaled.
11
Thyristors
OOCTI3LJI] T8401B T8411B T8421B
Solid State
Division T8401D T8411D T8421D
T8401M T8411M T8421M
H-1812 H-1813 H-1814

MTl MTl
MTl
For Phase-Control and Load-Switching Applications
L
Features:
di!dt Capability = 300 A!lls Low On-State Voltage at High Current Level,
Shorted-Emitter, Center-Gate Design Low Thermal Resistance
MT2
/ Low Switching Losses
.;
::s:
Gate
/ (. Gate
.....MT2 MT2 200 V 400 V 600 V
Package
T8401B T8411B T8421B Press-fit T8401B (410291 T8401D (410301 T8401M (41031)
T840lD T8411D T8421D Stud T8411B (41032) T8411D (410331 T8411M (410341
T8401M T8411M T8421M
Iso-stud T8421B (410351 T842lD (410361 T8421M (410371
Press-fit Stud Isolated-Stud
ReA T8401, T8411, and T8421 series triacs are gate- These triacs are intended for control of ac loads in applica-
controlled, full-wave silicon ac switches with integral triggers. tions such as heating controls motor controls, arc-welding
They are designed to switch from an off-state to an on-state equipment, light dimmers, and power switching systems.
for either polarity of applied voltage with positive or negative They can also be used in air-conditioning and photocopying
triggering voltages. equipment
MAXIMUM RATINGS, Absolute-Maximum Values: T8401B T8401D T8401M
For Operation with Sinusoidal Supply Voltage at Frequencies T8411B T8411D T8421M
up to 50160 Hz and with Resistive or Inductive Load. T8421B T8421D T8421M
REPETITIVE PEAK OFF-STA1E VOLTAGE:"

Gate open, T J = -40 to 110 C . '0' .
RMS ON-STATE CURRENT (CondUCtIon angle = 360 I:

Case Tempelature
T C = 85 C (Press-Fit types) . ----- 60 ----
0
80 C (Stud types)
0
. -----60 ----
75 C IIsolated-Stud typesl ----- 60 ----
For other conditions ---- See Fig. 3 ----
60 Hz (sinusoidal) ---- 600 ----
50 Hz (sinusoidal) .. -----500 -----
For more than one cycle of applied principal voltage ---- See Fig. 4 ----
VDM = VDROM,IGT = 300 mA, tr = 0.1 J" (See Fig. 13)
FUSING CURREN~ (for Triac Protection):
T J = -40 to 110 C, t = 1.25 to 10 ms
PEAK GATE-TRIGGER CURRENT:"
For 10 J.LS max. (See Fig. 7)
GATE POWER DISSIPATION (See Fig. 7):
Peak (For 10 MS max., IGTM .;; 7 A (peak)
AVERAGE
TEMPERATURE RANGE:"
Storage.
Operating (Case)
TERMINAL TEMPERATURE lOuring solderingl:
For 10 s max. (terminals and case) ................
STUD TORQUE:
Recommended
Maximum (DO NOT EXCEED) .
For either polarity of gate voltage (V G) with reference to main terminal 1... For temperature measurement reference point, see Dimensional Outline.
LIMITS
CHARACTERISTIC SYMBOL For All Types UNITS
Except as Specified
MIN. TYP. MAX.
Peak Off-State Current:-

Gate open, V DROM = Max. rated value . ... . .. .. . ..... ... ...... IDROM - 0.4 4 mA
Maximum On-State Voltage:- 0
For iT = 100 A (peak). TC = 25 C ........ . . ...... "TM - 1.55 1.8 V
DC Holding Current:-
Gate open, I nitial principal current:::: 500 mA (de)
vD= 12V.TC=25 <i, ..... . . . . .... . ..... .. ..... IHO - 20 60
TC=-40C ............... ... ..... ..... . .... - - 85 mA
For other case temperatures ..... ... ...... See Fig. 6
Critical Rate-of-Rise of Commutation VOltage:-

For vD = V DROM' IT(RMSI = 60 A, eommutating
di/dt = 32 Alms, gate unenergized. (See Fig. 14); dv/dt
TC =- 75:C (Press-fit types) .
. . . . . . . . . . . . . . . . . . ..... . .. . .... 3 10 -
= 65 C (Stud typesl ...... .
... . . . . . . . . . . . 3 10 - VII's
= 5SoC (Isolated-stud types) ...... . . . . . . .. 3 10 -

Critical Rate-ot-Rise of Off-State Voltage:-
ForvO = V DROM- exponential voltage rise, gate open, TC = 11 aOc: dv/dt
VII's
T8401S,T8411B.T8421B ..... .... 50 200 -
T8401D.T8411D.T8421D . . . . . . . . ...........
. 30 150 -
T8401M, T8411M, T8421M ................................ .... 20 100 -
DC Gate-Trigger Current:- Mode VMT2 VG
For vD = 12 V (de) 1+ positive positive - 20 75
RL = 30 n
0
T C = 25 C ,-
111- negative
positive
negative
negative
-
-
40
40
75
150
,1,+ negative negative - 100 150
mA
Mode VMT2 VG 'GT
For vD = 12 V (del 1+ positive positive - 35 150
R, ~ 30n
TC=-40oC
111-
1,,+
,- negative
positive
negative
negative
-
-
80
100
150
400
negative positive - 280 400
For other case temperatures ........ .......... . . . . . . . . . . . . . . . .. See Figs. 8 & 9
DC Gate-Trigger Voltage:-
For vD = 120V (del. RL = 30 n,
T C = 25 C
For other
.............
case temperatures
...... .... .... .....
..... .... ..... ..... . . . . .
. .......
. . . . . .. . . . .....
VGT - 1135
See Fig. 10
I 2.8 V

tgt
For vD = VDROM' 'GT = 300 mA. tr = O.ll's.
iT = 85 A (peak!. T C = 25C (See Figs. 11 & 15) ....... .
. . . . . . . . . . .. ... - 1.2 2.5 I'S

SteadyState
Press-fit types .... ...... .... .. . ..... ..... ..... . .. ..... ...... . - - 0.3
Stud types ....... ..... .... ...... '" ...... ..... .... .... .... ReJC
- - 0.35
Isolated'stud types .... .... ... .. ...... ..... . .. ..... . .... ..... .. - - 0.4
C/W
Transient (Press-fit & Stud types) ... ........ '" See Fig. 12
'fz
:I~ I ,1i 41
I
jll- :' II
I :~
It 4
-t 1fT
. 1"
'fll
~
' 'I
I
il;I tl1
.-t
H !' 81-
ld
i:i 100 "
0
is
3'
0
"-
75
I -1",,1>.
,,l!'"
r.,'Qi.
"r
I
if
w
'I
is
50 "
,,'J,,~"'I.-
:'"
t', 'm
i; - ! o 180 360"
25f-l-
\J
CONDUCTIO'" ANGLE
.BI8m
o 20 40 60
FULL~CYCLE RMS ON-STATE CURRENT [IT (RMSU -A
92C5-22760
GATE CONTROL MAY 8E LOST

p DURING AND IMMEDIATELY FOLLOWING
w SURGE CURRENT INTERVAL
~ 110 >-
w
<r ~ UNTIL JUNCTION TEMPERATURE HAS
" Z RETURNED TO STEADY-STATE
100 0
RATED VALUE.
~ ~1
~
>-
~
90
E~
~~500 '"
"'"
~
.y,
r
~~400 SOl;;-
w 80 0'"
z'" R ....::
ffi
-"
- --
1i 300 ..... :::::::::,
0 70 :::::::
~ 200
~ '"
"II 60 ~ 100
.
~~~O~~~~~~~I~EeuRRENT [ITIRMSI]~60A AT
" 50 0 SPECIfiED CASE TEMPERATURE

0 20
FULL-CYC:_E
40 60
RMS ON-STATE CURRENT [ITtRMSI]-A
2 4 6 '
10
2 4 6
102
2 4 6
e 103

92C5-22761
92CS-2:2:762
Fig. 4 - Peak surge on-state current vs. surge current duration.

I
t- 100
~-
<rw
<r> 80
Gfi
we>
>-w
z
>-<r
,?O 60
zw
02:
~t:
"'~
00
w"-
40
z-

tz
20
~
0.5 I 1.5 2
INSTANTANEOUS ON-STATE VOLTAGE (vTl-V
TRIGGERING MODES; ALL
100 ENCLOSED AREA INDICATES LOCUS OF
6 POSSIBLE TRIGGERING POINTS. PULSE DURATION
LIMIT
I
SHADED AREA
IS TYPICAL
RESISTANCE
RANGE
468 468
, '0
DC GATE - TRIGGER CURRENT (IGTI-A
(POSITIVE OR NEGATIVE 1
'"uz '00
j'!
'"'" 7
~~
,-'
>-<t
0:>
80
./
~ffi
>-or
"'>- 60
~'"
0",<t
V
>-u
z,
,/
--
'"0
u>- 40
'
'"z
"-0
i 20
0
468 466 468
10-3 10-2 10-1 r
TIME AFTER APPLICATION OF RECTANGULAR POWER PULSE -SECONDS
92LS-2263RI
Vo
oj --- ------ --------
92CS-17063 Fig. 14 - Relationship between supply voltage and principal current

(inductive load) showing reference pain ts for definition of
Fig. 13 - Rate-of-change of on-state current with time (defining dUdt).
commutating voltage fdv./dtJ.
,
I
v I I
o I I
o-l-!----:-r---
. 'I
r"
1:------i 90"l.POINT
In I I
0-
1,--I 1-.1--
1
__
I td ---1 tr l-
I 1
t---'.,--;
I
-r-~I
VGT I
0- t I ::: I~".~~N~ _ _ _ :CS-I3366R2
Fig. 15 - Relationship between off-state voltage, onstate current, AC INPUT '2<lV '40 V 240 V
VOLTAGE 6OH, 6OH, 50 H,
C, O.l/1F O.lI1F O.l/1F
definition of turn-on time (tgrl. ,co V 400 V 400 V
C, 0.1 "F O.lI1F 0111F
'OOV 'OOV 'OOV
R,
.w .W .W
100k1! rook!! 250kf!
RJ
SNUBBER
.W .W
15kH
l',W
0.18
15k1!
0.18
15k!!
0.18
NETWORK Cs O.22"F 0.22"F 0.22"F
FOR 60 A 200 V 400 V 400 V
(RMSI-IN 33. 33. 33.
OUCTIVE RS
lOAD .w .w .w
390S!
O.l"F
390 n
01 "F
390 n
O.1"F
~r--' RFI
FILTER
CF-
IF-
'OOV
l00"H
T84018
400 V
2OO,H
T84010
400 V
2OO,H
T84010
SNUBBER NETWORK FOR INDUCTIVE
lOADS OR WHEN COMMUTATING VOLTAGE RCA TRIACS T84118 T84110 T84110
(dv/dt) CHARACTERISTIC IS EXCEEDED. T84218 T84210 T84210
- For Other RMS Cunent .
alues rele. 10 RCA
Appllcallon Note AN474~.
- TYplcal values for Lamp dImmIng C"CUIU
~
r---
I O.7475U8.99}
O.745~(l8.93)
DIA

Fig. 17 - Mounting method for press-fit package types. Press-fit
type mounting is nQt recommended for triaes operating shown with your ReA sales representative or supplier,
at maximum rated rms current.
Fig. 18 - Suggested mounting arrangement for stud and isola ted-
stud package types.

Package
Employed Retistance QC/W
Press-fitted into heat sink. Minimum required

0.4
thickness of heat sink'" 0.25 in. (6.35 mm)
Soldered directly to heat sink. (6040 solder

which has a melting point of 18SoC should be 0.012 to 0.036
used. Heating time should be sufficient to cause For 1 to 3 mil
Press -Fit
solder to flow freely). thick solder
THIS METHOD RECOMMENDED FOR MAXI layer
MUM HEAT TRANSFER
Directly mounted on heat sink with or without

Stud
0.05 to 0.15
the use of heat sink compound.
A
,,0 0.751
,,0,
J
J, NOTE
,-,r 1 le~d\ JandJl available,,! var,ou$lenglht, For onfor01allon.
,-,Tl contact the ReA Sales Office on your loo;;ale
.:,T2
DIMENSIONAL OUTLINE
T8411B, T8411D, T8411M
STUD
INCHES MILLIMETERS
SYMBOL NOTES
MIN MAX MIN. MAX
A - 0.620 - 15.75
,,0 0.751 0.760 19.08 19.30
E 0.866 0.872 21.99 22,14
NOTES:
F 0.182 0.192 4.62 4.87
,. Leads J and Jl available al various lengths_ For mfo,mahan,
J 6.8 NOM 172.72 NOM 1
contact the ReA Sales QHice in your loo::ale.
J,
N
,)1
6.3 NOM
I
0.740 0.760
0.060 0.065
160.02 NOM
1879
1.52 \
19.30
1.65
1
2 VW 's pilch
Stilndard
Recommended
diameter
1o. Federal
01 coated
torque:
Services,
threads.
Handbook
125 inchpounds
REF: Screw
H 28 Part
Thread
I.
01, 0.266 - 6.75 -

~'>T2 0.144 - 3.70 -
,W 'h-20 NF2A '/,20 NF2A 2
DIMENSIONAL OUTLINE
TB421B, TB421D, TB421M
ISOLATED-STUD
"'----- JI -, -- .,
l
~ J .1
ISOLATING
MATERIAL
(NOTE 31
._:1 I F N
IIIIIIIII~
INCHES MILLIMETERS
SYMBOL NOTES
MIN MAX MIN. MAX.
A 0.710 - 18.03
,0, 0.751 0.760 19.08 19.30
E 0.866 0.872 21.99 22,14
0.182 0.192 4.62 487 NOTES

F
6.8 NOM. 172.72 NOM. , 1 LeadsJandJl available at varlOUi lengths. Fo. ,"fo,mauon.
J
J, 6.3 NOM. 160.02 NOM , COnlaCIthe ReA Sales Office on your locale
9.78 2; oW IS pItch dIameter 01 coaled th.eads REF- Screw Thread

M 0.375 0.385 9.52
Standards 10' Federal SerylCes, Handbook H 28 Part I
N
oT
0.740
0,060
0.760
0.065
18.79
1.52
I 19.30
'65
Recommended torque: 125 Inch-pounds
OT, 0.266 - 6.75 - 3 IWlat'ng malenal (ceramIC) between hell (slUdl and termmal
No J,sbl!ryltlumo.,de.
oT2 0.144 - 3.70
oT3
oW
0.195
~20
0.205
NF 2A
4.95
'h-20
I 5.20
NF2A 2
No.1 - Gate
NO.2 - Main Terminal 1
Case, No.3 - Main Terminal 2
WARNING: The ceramic of the isolated stud package con-

tains beryllium oxide. Do not crush, grind, or abrade this
part because the dust resulting from such action may be
hazardous if inhaled, Disposal should be by burial.
D\l(]5LlD
Solid State
Division
T8440 T8450
Series
H1713 H-17J4 H1765
Main Main Main

Terminal 1 Terminal 1 Terminal 1
, Press-Fit, Stud, and Isolated-Stud Packages
II
" Gate
For 120-V Line Operation - T8430B (40916)-, T8440B (40919)-,
Gate
~Gate T8450B (40922)-
For 240-V Line Operation - T8430D (40917)-, T8440D (40920)-,
T8450D (40923)-
For High-Voltage Operation - T8430M (40918)-, T8440M (40921)-,
T8450M (40924)-
Main ~
le'
Terminal 2 S Main
Main Terminal 2
T8430 Termina12
Series T8440 T8450 - di/dt Capability = 300 A/Ils - Low On-State Voltage at High
Series Series - Shorted-Emitter Center-Gate Design Current Levels
Press-fit Stud I solatedstud
- Low Switching Losses - Low Thermal Resistance
These ReA triacs are gatecontrolled full-wave silicon ac These triacs are intended for control of ac loads in applica-
switches. They are designed to switch from an off-state to an tions such as heating controls, motor controls, arc-welding
on-state for either polarity of applied voltage with positive or equipment, light dimmers, and power switching systems.
negative gate triggering voltages. They can also be used in airconditioning and photocopying
equipment.
MAXIMUM RATINGS, Absolute-Maximum Values: T8430B T8430D T8430M
For Operation with Sinusoidal Supply Voltage at Frequencies up to 50160 Hz and with T8440B T8440D T8440M
Resistive or Inductive Load. T8450B T8450D T8450M
REPETITIVE PEAK OFF-STATE VOLTAGE: VDROM 200 400 600 V
Gate open, T J = -40 to 110 C .
RMS ONSTATE CURRENT (Conduction Angle = 360): ITIRMSI
Case temperature
TC 75C (PressFit types)
= 80---- A
65C (Stud types) _................... 80---- A
55C (lsolatedStud types) 80---- A
For other conditions . See Fig. 3
PEAK SURGE (NON-REPETITIVE) ONSTATE CURRENT: ITSM
60 Hz (sinusoidal) .. . ............ ---- 850 ---- A
50 Hz Isinusoidal) . . . . ---- 720 ---- A
RATEOF-CHANGE OF ONSTATE CURRENT: di/dt
VDM = VDROM' IGT
300 mA. tr = O.I"s (See Fig. 13)
= --- 300 ----Ai"s
FUSING CURRENT (for Triac Protection): 12t
TJ = -40 to 11(fC, t = 1.25 to 10 ms ............ ---- 3600---- A2s
PEAK GATE-TRIGGER CURRENT: IGTM
For 10ps max. (See Fig. 7) 7 A
00
Peak (For lO"s max., IGTM ~ 7A (peak). (See Fig. 7)
Average
.........
.
PGM
PG(AV)
40
0.75---
W
W .g~
TEMPERATURE RANGE:. C1l
Storage . Tstg -- -40 to 150 --- c ~

Operating (Case) . TC -- -40 to 110--- c ~
c:;.
TERMINAL TEMPERATURE (During soldering): TT 0
For 10 s max. (terminals and case) --- 225 --- c =:3
Formerly ReA Dav. Nos. TA7752-TA7757, and TA7937-TA7939, respectively. ;-l
For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1. ~.
-For either polarity of gate voltage (VG) with reference to main terminal 1.
"For temperature measurement reference point, see Dimensional Outline.
11-73
CRARACIERISiiC ::>YMtjUL v, .., ,~
OTHERWISE SPECIFIED
MIN. TYP. MAX.

Gate open, TJ = 110C, VoROM = Max. rated value. IDROM - 0.4 4 mA

For iT = 200 A (peak), T C = 25C ...... VTM - 1.7 2 V
Gate open, Initial principal current = 500 mA (de),
vD = 12V:
TC = 25C ...... ....... IHO - 20 60 mA
= _40C ... ............. - - 85
For other case temperatures. See Fig. 6

For vD = VDROM, ITIRMS) = 80 A, eommutating
di/dt = 42 Alms, gate unenergized, ISee Fig. 14):
TC = 75C (Pressfit types) . 3 10 -
= 65C (Stud types) .. .... dv/dt 3 10 - V//ls
= 55C (lsolatedstud types) ....... 3 10 -
Critical Rate-ofRise of Off-State Voltage:'

For vo = VoROM, exponential voltage rise, gate
open, TC = 110C:
T8430B, T8440B, T8450B . . . . . . . . . .. . . . . . .. 50 200 -
T8430D, T8440D, T8450D . ........ ,. dv/dt 30 150 - V//ls
T8430M, T8440M, T8450M. 20 100 -

RL = 30 n 111- negative . negative - 40 75
TC = 25C 1- positive negative - 40 150
111+ negative negative - 100 150
IGT mA
Mode VMT2 VG
RL = 30n 111- negative negative - 80 150
TC = -40C
For other case temperatures

1-
111+
positive
negative
negative
positive
-
-
100
280
See Figs. 8 & 9
I 400
400
DC Gate- Trigger Voltage:'.

For vD = 12 V (de), RL = 30 n,
TC 25C = ..... - I 1.35 I 2.5 V
For other case temperatures .... . . . .... .. VGT
See Fig. 10
GateControlled T Jrn-On Time:

For vD = VDROM,IGT =300 mA, tr = 0.1 /lS,
iT = 112 A (peak), T C = 25C ISee Figs. 11 & 151 tgt - 1.2 2.5 J.fS

SteadyState
Press-fit types. .... .... .............. - - 0.3
Stud types. . . . . . . ... . . . . . . . . . ROJC - - 0.4 C/W
Isolated-stud types ............... ..... - - 0.5
Transient (Press-fit & Stud types) See Fig. 12
CURRENT WAVEFORM: SINUSOlOAL
CONDUCTION ANGLE : 3600
~ 125
Z
>~= 100
::lo
'" 75
~
i'
'" 50
~
~ 25
--;:;~+:::::
o 20 40 60 80
FULL-CYCLE RMS ON-STATE CURRENT ~T(RMS~-A
CURRENT WAVEFORM: SiNUSOIDAL GATE CONTROL MAY BE LOST

LOAD: RESiSTIVE OR INDUCTIVE DURING AND IMMEDIATELY FOLLOWING
CONDUCTION ANGLE : 3600 SURGE CURRENT INTERVAL.
CASE TEMPERATURE: MEASURED AS '"
I-
~ UN.TIL JUNCTION TEMPERATURE HAS
>,
"''''
'" RETURNED TO STEADY-STATE
RATED VALUE.
~~ ~
&~
'" I- "- ~,
I- '\j~
'Z
z'"
0",
Z'"
-" ~ "'- ."'" ...
~u
~ 3
...............
''""
'""- 20C LOAD; RESISTIVE
RMS ON-STATE CURRENT [ITlRMSJ]' 80A AT
CONDUCTION ANGLE
,SI +sm 100 SPECIFI ED CASE TEMPERATURE
20 40 60
FULL-CYCLE RMS ON-STATE CURRENT ~T(RMSU-A
I-
~
~~200
a~
",,,,
....w _
<l Z __
~ gs150 .. __
z w _. ---~ ._.~ _.
0> .__.
~~ .~:; ---
00100
wo. ...... -_ ..
z -- _ -::
~ ::----
~ 50 ~ :d~
o 0.5 I 1.5 2 2.5

INSTANTANEOUS ON-STATE VOLTAGE (vr)-V
MINIMUM GATE RESISTANCE
1 I II 1 I
AVERAGE (DC) GATE POWER
2468 468
I 10
DC GATE - TRIGGER CURRENT {IGT}-A
W II .1
~ 100
'I -r
a~
W~
1-'
>-<[
80
I
I
I
[7
y' I
0"
<[00
WW
"' ....
...I
60
1/'1 I
~w
0'"
<[
...
u
I V ! I
ZI IV I II II I
Wo 40
II
U ...
00'
).-
WZ
0.0
I--" I 11
E 20
Z
~ 1 II I
0
468 468
I II I
468
10-3 10-2 10-1 I
TIME AFTER APPLICATION OF RECTANGULAR POWER PULSE-SECONDS
92LS-2263RI
vO~~Y-_J_-\i7---~--/~
I
I I
I
I
I COMMUTATING
I dl/dt
I
I
I

commutating voltage fdv/dtJ.
I
I I
Vo I I
I I
o_LL I
LL __
I I
I I I
I I I
-',-i---
I I I
T : I" 90% POINT

ITM I I I
o-.LJ- __
~'d -i--L-.,
I I I
I--- 'Ol--i
I
~
f:-
VGT I
Ir-- 0 7480( 19 00)
07450(18 92) OIA
0- L -
.--10%
-
POINT
--------
92CS-13366R2
Fig. 15 - Relationship between off-state voltage, on-state current,

Mounting ot press-tit package types depends upon an inter- cenler ana gUloe Ine preSS-TlI pacKage proptmy IfllU lilt: flt::i:H
ference fit between the thyristor case and the heat sink. As sink. The insertion tool should be a hollow shaft having an
the thyristor is forced into the heatsink hole. metal from the inner diameter of 0.575 in. (14.60 mm) and an outer diam-
heat sink flows into the knurl voids of the thyristor case. The eter of 0.850 in. (21.59 mm). These dimensions provide
resulting close contact between the heat sink and the thyris sufficient clearance for the leads and assure that no direct
tor caseassures low thermal and electrical resistances. force will be applied to the glassseal of the thyristor.
A recommended mounting method, shown in Fig. 16. shows The press-fit package is not restricted to a single mounting
press-fit knurl and heat-sink hole dimensions. If these dimen arrangement; direct soldering has been successfully em-
sions are maintained. a "worstcase" condition of 0.0085 in. ployed. The press-fit case is tin-plated to facilitate direct
(0.2159 mm) interference fit will allow pressfit insertion soldering to the heat sink. A 60-40 solder should be used and
below the maximum allowable insertion force of 800 heat should be applied only long enough to allow the solder
pounds. A slight chamfer in the heatsink hole will help to flow freely.
Table I - Case-ta-Heat-Sink Thermal Resistance for Different DIMENSIONAL OUTLINE FOR T8430 SERIES
Mounting Arrangements. PRESS-FIT

Package
Employed Resistance- C/W
0

sink = 0.25 in. (6.35 mml

PressFit (6040 solder which has a melt-
ing point of 188C should be 0.15 to 0.3
used. Heating .ime should be
sufficient to cause solder to
flow freely).

INCHES MILLIMETERS
Stud with or without the use of heat- 0.2 to 0.4 SYMBOL
MIN, NOTES
MAX. MIN, MAX.
sink compound. A 0.454 11.53
00 0.751 0.760 19.08
.0, - 0.7585 -
19.30
19.13 2
J - 1.53 - 38.86
M 0.375 038'; 9.52 9.78 ,
.T 0060 OJ)65 1.52 1.65
.T, - 0.193 - 4.90
1. Contour and an..,...lar orientation of these terminals is

optional.
2. Outer diameter of knurledsurlace.

DIMENSIONAL OUTLINE FOR T8440SERIES DIMENSIONAL OUTLINE FOR T8450 SERIES
STUD ISOLATED-STUD
ISOLATING
MATERIAL
(NOTE 4)
INCHES MILLIMETERS MILLIMETERS

SYMBOL ~I~NCH:'~X NOTES
SYMBOL NOTES MIN MAX
MIN MAX. MIN. MAX
A 0.789 2004
A - 0.591 - 15.01
0, 0,151 0760 '908 19,30
00' 0.751 0.760 1908 19.30
E 0.866 0.872 21.99 22.14 E 0866 0872 21,99 22.14

F 0.182 0.192 4.62 4.87 3 F 0182 0.192 4,62 4.87 3
J - 1.63 - 41.40
, J 1.85 46.99
M 0.375 0.385 9.52 9.78 M 0375 0385 952 9.78 ,
N 0.740 0.160 18.79 19.30
M, 0375 0385 952 978 ,
0' 006<l 0.065 1.52 1.65
0740
0', - 0.193 - 4.90 N
,
0760 1879 1930
OW '.',-20 NF-2A ',1,-20 NF-2A

, 0060 0065 152 165
0.193 490
NOTES " 0195 0205 495
1. Contour and angular orientation of these terminals is W
" '/,20 NF-2A '-20
~20
NF-2A ,
optionaL
NOTES
2. </JW is pitch diameter of coated threads. Ref: ASA 81_
11960. Recommended torque: 125 inch-pounds. 1. Contour and angular orientation of these terminals is
optional.
3. A chamfer or undercut on one or both ends of hexagonal
portion is optional. 2. W is pitch diameter of coated threads. REF: ASA B1,
11960. Recommended torque: 125 inch-pounds.
3. A chamfer or undercut on one or both ends of hexagonal
portion is optional.
4. Isolating material (ceramic) between hex (stud) and
terminal No.3 is beryllium oxide.
WARNING: The ceramic of the isolated stud package con-

No.1 - Gate tains beryllium oxide. Do not crush, grind, or abrade this
No.2 - Main Terminal 1 part because the dust resulting from such action may be
Case, No.3 - Main Terminal 2 hazardous if inhaled. Disposal should be by burial.
Silicon Controlled Rectifiers (SCR's)
File No. 654
S2062 Series
4-Ampere Sensitive-Gate
Silicon Controlled Rectifiers
Features:
Microampere gate sensitivity
Minimum gate current specified for the S2OO2 series
60()..V capability
4-A (rms) on-state current ratings
35-A peak surge capability
Glass-passivated chip for stability
Low thermal resistances
Surge capability curve
The S20OO, S2061, and S2062 series. are sensitive-gate series according to gate sensitivity. The types within each
silicon controlled rectifiers designed for switching ac and dc series differ in their voltage ratings; the voltage ratings are
currents. These SCA's are divided into the three different identified by suffix letters in the type designations. (Cont'd
on pg. 2)

NON-REPETITIVE PEAK REVERSE VOLTAGE
RGK=1000n,TC=-40tollO"C .............. VRSXM}
NON-REPETITIVE PEAK OFF-5TATE VOLTAGE
RGK=1000n,TC=-40toll0'C VOSXM
REPETITIVE PEAK REVERSE VOLTAGE
RGK=1000n,TC=-40toll0'C .............
REPETITIVE PEAK OFF-STATE VOLTAGE
RGK = 1000 n, T C = -40 to 110'C
ON-5TATE CURRENT:
Conduction angle = 180', T C = 85'C
Average ac value .. . . . . . . . . . . . . . 2.5 A
'TIAV)
RMS value . 'TIRMS) 4 A
DC operation . . . . . . . . . . . . . . . . 2.75 A
'T(OC)
PEAK SURGE (NONREPETITIVE) ON-sTATE CURRENT:
60 Hz (sinusoidall ..................... 'TSM 35 A
For more than one cycle of applied principal voltage ..... See Fig. 6
PEAK GATE CURRENT (t=10/,sec) .... 0.2 A
PEAK GATE REVERSE VOLTAGE 6 V
RATE OF CHANGE OF ON-5TATE CURRENT:

VOM = VOROM' IGT = 1 mA, tr = 0.5/,s, T C = 110'C 100 A//'s

PEAK FORWARD (tor 10 IlS max.l ............ PGM 0.5 W
AVERAGE (averaging time = 10 ms max.l .......... PG(AV) 0.1 W
TEMPERATURE RANGE:
Storage . . . . . . . . . . .. Tstg -40 to +150 'c
Operating (case)' TC -40 to +110 'c
For 10 s max. TT 250 'c
All types in each series utilize the JEDEC TO-220AB I These thyristors have microampere gate-current requirements
package. Upon request. each type is available in either of two which permit operation with low-level logic circuits. They
variants of the TO-220AB package. For information on these can be used for lighting. power-switching. and motor-speed
package variations. contact the RCA Sales Office in your controls. and for gate-current amplification for driving larger
locale. I SCA's.
LIMITS
FOR ALL TYPES
UNLESS
OTHERWISE
SPECIFIED
MIN. TYP. MAX.
PEAK OFF-STATE CURRENT:
Forward, Vo ~ VORXM' RGK = 1000 n
IORXM
T C = 2SoC . . . . . . . . - 0.1 10
T C = 110C. - 10 100
Reverse, VR - VRRXM' RGK - 1000 n I'A
T C = 2SoC . . . . . . . . IRRXM - 0.1 10

TC = lOOoC . - 10 100
INSTANTANEOUS ON-STATE VOLTAGE:
For iT = 4 A and T C = 2SoC ISee Fig. 161 . vT - 1.2S 2.2 V
DC GATE TRIGGER CUF;lRENT:
VO=12Vldcl. RL = 30 n. T C = 2SoC:
52060 Series - - 200
IGT I'A
52061 Series - - SOO
52062 Series 100 - 2000
For other case temperatures. See Figs. 10.11.12
I
DC GATE TRIGGER VOLTAGE:
Vo = 12 V Idcl, RL =30n.TC=2SoC
For other case temperatures .
VGT - I O.S
See Fig. 14
0.8 V
INSTANTANEOUS HOLDING CURRENT:

RGK ~ 1000 n, Vo = 12 V, IT IiNITIAL) = SO mA, T C = 2SoC:
52060 Series iH - 1.7 3 mA
:
52061 Series - 3.9 6
52062 Series - 6 10
LATCHING CURRENT:
RGK = 1000 n, Vo = 12 V. TC = 2SoC:
S2060 Series Ii GT = 200 J.lAI iL - 1.8 4 mA
52061 Series IiGT = SOOJ.lAI - 2.S 8
S2062 Series IiGT = 2000 J.lAI - 8 12
CRITICAL RATE OF RISE OF OFF-STATE VOLTAGE:

Vo = VORXM' RGK = 1000 n, dv/dt VII's
Exponential rise, T C :: 110C S 8 -
GATECONTROLLEO TURNON TIME:
Vo = VORXM' iT = 1 A. RGK = 1000 n. tgt I'S
IGT = 1 mA. rise time = 0.1 /-ls. T C = 25C - 1.7 2.S
CIRCUIT COMMUTATEO TURN-OFF TIME:

Vo = VORXM' iT = 1 A. RGK = 1000 n.
tq I'S
Pulse Duration"" 50 1J5, dv/dt ""5 V IllS,
di/dt = -10 AIl's. IGT = 1 mA at turn on, T C = 1lOoC - 30 100
THERMAL RESISTANCE:
Junction-ta-Case
. R/iJC - - 3.S C/W
Junction-ta-Ambient . R/iJA - - 60
,
, I I IVDSXM
VRSXM -----i r-- VRRXM I

VDRXM
25 CURRENT WAVEFORM: SINUSOIDAL

LOAD; RESISTIVE OR INDUCTIVE
CASE TEMPERATURE MEASURED AT POINT INDICATED
ON DIMENSIONAL OUTLINE
.u CURRENT WAVEFORM: SINUSOIDAL
?
I LOAD: RESiSTIVE OR INOUCTIVE
CONDUCTION ANGLE:.180 '"I
7
~
w
CASE TEMPERATURE MEASUREO AT POINT
INDICATED ON DIME NSIONAL OUTLINE
or
~
~ ~
0
~ z
75 0
0-
Z ~
W
ii; i:j
?i 50
0
~
w
5
'"~ :'"i'
w
~ 25 0-
~
:> ~
~
x
;,
0
~
4
'"I
~ GATE CONTROL MAY BE LOST
"
0
Q.
FOLLOWING
INTERVAL
SURGE-CURRENT

Z UNTIL JUNCTION TEMPERATURE
9 HAS RETURNED WITHIN STEADY-
0- STATE RATED VALUE
~
~
I
~
0
5
:i''"
~
~
;,
0
0 0.5 I 1.5 2 2.5
DC ON STATE CURRENT [ITIDC~-A

+- 1000 SINGLE-HALF-SINE-WAVE PULSE (NON-REPETITIVE) DC OFF-STATE VOLTAGE IVO):::12V
10~
REAPPLIED BLOCKING VOLTAGE:O
ffi 6 IGT: ImA SQUARE PULSE, 10,u.s DURATION LOAD RESISTANCE (RL):::30n
'" 6
~ CASE TEMPERATURE (TCl:::2S'"C
, , CASE TEMPERATURE (TC):::25'"C
-;:.
~~ g"-
4 4
'"!11:
:-- r---...
I-:--...
......
'"
~ 2" ""-
to 100
z '"'" 10'

0-
'"'"
"-I
Q
!
X
'":>
2 l-
i!' 10 DURATION J ~
'"'" I
'"i3
'"'" '"'"
~ 6 :3
ii'
'"'"
0-
4
0-
'" '"
~
~
:> u
X
'":>
2
"
0.1
2 4 6 8 !QOO.
GATE-TO- CATHODE RESISTANCE (RGK}-D
10. CASE TEMPERATURE

~(Tc}a25C
/ /
I ,/
-;:.
- 2
I
I-
~ I
1/ /
~
::>

~ll
u
'"
...~
I-
1! 2 f-#,
~ 0.1
~/
0
<g
I
:il
z
1!
z 2
/
~
z 001
05 I 1.5 2 2.5
INSTANTANEOUS ON-STATE VOLTAGE (vTI-V

92C5-19841
DIMENSIONAL OUTLINE
(JEDEC TO-220AB)
Lr=-:-~OPTIONAL " CHAMFER
SYMBOL MIN.
'NCHES
MAX.
MilLIMETERS
MIN.
SEATING PLANE . L~I f
MAX.
II A 0.160 0.190 4.07 4.82

F TEMPERATURE b 0.025 0.040 0.64 1.02
MEASUREMENT
POINT b, 0.012 0.020 0.31 0.51
b2 0.045 0.055 1.143 1.397
D 0.575 0.600 14.61 15.24
E 0.395 0.410 10.04 10.41
.
El 0.365 0.385 9.28 9.77
E2 0.300 0.320 7.62 8.12
., 0.180
0.080
0.020
0.220
0.120
4.57
2.03
5.58
3.04
1.39
F 0.055 0.51
H 0.235 0.265 5.97 6.73
l 0.500 - 12.70 -
II - 0.250 - 6.35
.p 0.141 0.145 3.582 3.683
Q 0.040 0.060 1.02 1.52
Z 0.100 0.120 2.54 3.04
No. 1 - Cathode
Mounting Flange, No.2 - Anode
No.3 - Gate
Thyristors
ffil(]5LJD 2N3228 2N3529
Solid State
2N3528 2N4102
All-Diffused SCR's for Low-Cost Power-Control and

Power-Switching Applications
RCA 2N322S*, 2N3525*, 2N4101 *, and 2N352S,
2N3529, and 2N4102 are all-diffused, three-junction,
silicon controlled-rectifiers (SCR's) intended for use in
power-control and power-switching applications.
if
Types 2N322S, 2N3525, and 2N4101 use the JEDEC
.
c~
TO-66 package and have a blocking voltage capability of ,-
up to 600 volts and a forward current rating of 5 amperes
0
~~
(rms value) at a case temperature of 75 C.
Types 2N352S, 2N3529, and 2N4102 use the JEDEC
TO-S package and have a blocking voltage capability of
up to 600 volts and a forward current rating of 2 amperes 2H3228 2H3S28
(rms value) at an ambient temperature 0
of 25 C. 2H3S2S 2H3S29
2H4101 2H4102
Formerly Dev. Types TA1222, TA1225, and TA2773, re-
spectively. JEDEC TO-66 JEDEC TO-8
Formerly Dev. Types TA2597, TA2617, and TA2774, re-
,
Average Average
spectively. Current __
Forward Forward
.. The silicon con trolled-recti fier is also known as a reverse-
Voltage Amperes Amperes
blocking triode thyristor.
3.2 1.3
For 120-Valt
Line 2N3228 2N3528
Operation
For 240-Volt
Line 2N3525 2N3529
Designed especially far high-valume systems
Operation
Readily adaptable far printed-circuit baards and metal
heat sinks
For High-
Low switching losses Valtage
2N4101 2N4102
High di/dt and dv/dt capabi lities Power
Supplies
Shorted emitter gate-cathode construction
Forward and reverse gate dissipation ratings
All-diffused canstruction -assures exceptional uni-

farmity and stability of characteristics
Direct-soldered internal construction -assures ex-

ceptianal resistance to fatigue
Symmetrical gate-cathade canstruction - provides uni.

form current density, rapid electrical conduction, and
efficient heat dissipation
All-welded construction and hermetic sealing
Law leakage currents, both forward and reverse
low forward voltage drop at high current levels

Abso/ute-Maximum Ratings, for Operation with Sinusoidal AC Supply Voltage
at a Frequency between 50 and 400 Hz, and with Resistive or Inductive Load
CONTROLLEDRECTIFIER TYPES UNITS

2N3228 ] 2N3525 j2N4101 2N3528 T 2N3529 I 2N4102
Transient Peak Reverse Voltage
(NonRepelitive), vRM(noorep)' ................... 330 660 700 330 660 700 volts
Peak Reverse Vollage (Repetitive), vRM(replb ........... 100 400 600 100 400 600 valls
Peak Forward Blocking Voltage
(Repelitive), vFBOM(replc .. . .... 600 600 700 600 600 700 volts
Forward Current:
For case temperature (T C) of . 75C,
and unit mounted on heat sink-
Average DC value at a conduction
angleot 180', I FAY<! ............
RMS value, IF RMS" .
For other conditions, See Fig. 8
For free-air tempera~ure (T FA) of 25C,
and with no heat sink employed-
Average DC value al a conduction
angle of 180", IFAY<! ...... - - - 1.3 1.3
RMS value, I FRMS' ............... - - - 1.0 1.0
For other condlhons, See Fig. 9.
Peak Surge Current, iFM(Surgej!:
For one cycle of applied voltage .................. 60 60
For more than one cycle of applied voltage.. . ......... See Fig. 13 See Fig. 13
Sub-Cycle Surge (NonRepetitivel 111g
For a period.of lms 10 8.3ms .......... 15 15 ampere2
second
~~~d~h.C.h~~~.O.'
.F.o~a.r~~~r.r~n.t,
............... 100 100 amperes/
microsecood
VFB = vBoo(min. value)
IGT = 100mA, 0.51' s rise time
(See waveshapes of Fig. I)
Gale Power:
Peak, Forward or Reverse, for lOj.Ls duration, PGMj ....
(See Figs. 5 and 6)
Average, PGAyk .........................
Tempelature:
Storage, Tstg ..........................
Operating (Casel, T C
CRITICAL 0,/01 ~
0- 1--------------- /
'F
-f---!
0- i - _T~ -~- - -- -- --------_
...: \--- t
l
92CS-I3363RI
fi:o
d't
t= RC
.
63 VFB
1
_ ..~"'-._. _ ..._ .._- __ n _____ - __ _n
... _ .. ......... ~
2N3228. 2N3528 2N3525. 2N3529 2N4101. 2N4102
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
Forward Breakover Voltage, vBOOm;

AI Te: .Ioooe . ........... 100 - - 400 - - 600 - - volts
Peak Blocking Current, at T C :: 1000e:
Forward, IFBOMn. . . . . . . . . . . . . ....... . . . . . . . . . . . ... - 0.10 1.5 - 0.10 3.0 - 0.40 4.0 mA
VFBOP: 'BOO(min. value)
Reverse, IRBOMQ ..... ............ .. . . . . .. . . . . . . . . . . . - 0.05 0.75 - 0.10 I.5 - 0.10 1.0 mA
VRBOP: vRMUep) value
Forward Voltage Drop, vFr
At a Forward Current of 30 ampeles and a TC =: +250C (See Fig. II). - 1.15 1.8 - 1.15 1.8 - 1.15 1.8 volts
DC Gale-Trigger Current, IGTs
AI Te: .150e (See Fig. 5). ............................ - 8 IS - 8 IS - 8 15 mAldc)
GaleTrigger Vollage, VGTI
AI Te: .
.150e1See Fig. 5). . . . . . . . . .... . . . . . . . . .. . . ... - 1.1 1.0 - 1.1 1.0 - 1.1 1.0 volts(dc)
Holding Current, iHOOu
AI Te: .150e .. . . . . . . . . ..... . . . . . . . . . . . . - 10 10 - 10 10 - 10 10 mA
Critical Rate of Applied Forward Voltage,
Critical dv/dtv. ..... .... ....... 10 100 - 10 100 - 10 100 - vollsl
VFB =: vBOO(min. value), exponential rise, microsecond
Te: .Ioooe (See waveshape of Fig. 1)
TurnOn Time, tonW, (Delay Time + Rise Time) . .
. . . . . . .. . . . . . 0.75 I.5 - 0.75 I.5 - 0.75 I.5 - microseconds
VFB =: vBOO(min. value), iF '" 4.5amperes,
IGT: 100mA. O.l!,s rise lime, Te: .150e
(See wave shapes of Fig. 3)
TurnOff Time, toffX, (Reverse Recovery Time + Gate Recovery Time) ... - 15 50 - 15 50 - 15 50 microseconds
iF"" 2 ampefes, 50 p. s pulse width, dVFB/dt 20 vip. s, =:
dr, 'dl: lOA'!'s. IGT: 100mA. Te: .750e

(See waveshapes of Fig. 4)
2N3228. 2N3525. 2N4101 2N3528. 2N3529, 2N4102
Min. Typ. Max. Min. Typ. Max.
Thermal Resistance:
Junction-tocase. ............. .. .......... ........
. . . . . . . . . . . . . ...
- - 4 - - -40 ClYI
Junctlontoambient. - - - - - C/W
I
dir Idt \ I VRB
~\ _____ :----.i
\ I
I
I
I I
-t------ ------0
I I
I I I
t gr -----..j
I' 'I'
I I I
k-----
I toff~
SHADED AREA INDICATES LOCUS
OF POSSIBLE TRIGGERING POINTS
FOR VARIOUS TEMPERATURES.
I I
PERMITTEO PULSE WIOTHS
FOR INDICATED
FORWARD GATE
PEAK
POWER
...,
II "- "-
II>
1 -
~
0
> 10
Ips
...
'.
'~
" r- ~~N~~r ~tJEI NTD~~GAt;.EtD MAXIMUM GATE
'\.
10014
V~ ..
~
~'i>\'i>
~ JUNCTION TEMPERATURE (T I RESISTANCE

ms
> T " 40C
~~~
'"
0
0 - /'- ,.- ~\~'
..
:z: +'5"C
,/
STEADY f/
STATE
",
0 + 100C
..
0 :.> .....
, 1.0
..'" AVERAGE
DISSIPATION
GATE
LIMIT
""

0.5 WATT
TJ -40C
tlWC
+25"C
MAXIMUM GATE TRIGGER ' ,-
MAXIMUM VOLTAGE AT WHIcH JUNCTION TEMPERATURE IT J)
I
T J ~ + 100C
I I III I I

The construction of the I';ate-cathode junction

used in these devices provides a larl';e periphery
center I';ate. These devices also employ shorted-
emitter construction which removes restrictions on
both forward and reverse peak I';ate voltlil';e and peak
I';ate current. Limitinl'; values of volt-ampere products
for different I';ate pulse widths are shown in Fil';. 5.
These limits should be adhered to when desiW1inl';
pulse tril';l';er circuits for maximum tril';ger pulse widths
and peak power dissipation. The volt-ampere products
in the reverse direction shown in Fig. 6 should be
used to determine limitations for reverse gate tran-
sients or reverse gate pulses if present. In all cases,
total average gate dissipation, both forward and re-
verse, should not exceed the average I';ate dissipation
rating (PCA Y) of 0.5 WBtt.
Turn-on times for different gate currents are shown
In Fili. 7. These curves may be used to determine the
required width of the liate trililier pulses. It is only
necessary to maintain the liate trililier pulse until the
malinitude of the forward anode current has reached
the latching current value. However, conservative
desil';n requires that the liate trililier pulse width be
at least equal to or somewhat lireater than the device
turn-on time. Some applications may require wider
liate pulse widths for proper circuit operation.
RATING CHART (FREE-AIR TEMPERATURE) FOR TYPES

2N3528, 2N3529, AND 2N4102
u
o 1---r-l'80-
CONDUCTION
ANGLE
0.25 0.5 0.75 I 1.25 1.5 1.75

AVERAGE FORWARD CURRENT (IFAV}-AMPERES
92CS-12749RI
CASE TEMPERATURE (TC)::25 C

SUPPLY FREQUENCY"'60 Hz SINE WAVE
30
[ 2 3
AVERAGE FORWARD CURRENT (IFAV)--AMPERES
92C5-12750
NATURAL COOLING. SUPPLY FREQUENCY = 60 Hz SINE WAVE
SINGLE - PHASE OPERATION. LOAD = RESISTIVE
CONDUCTION ANGLE: 1800 LUE
CASE MOUNTED DIRECTLY ON HEAT SINK. :~~~r~~16::AA:D ~~~~~~~ rIOFLA~~~EM~~~~~~-r:~I~~ttutATED VA
HEAT SINK: 1/16 THICK COPPER WITH
A MAT BLACK SURFACE AND THER '"'" 60" I
MAL EMISSIVITY OF 0.9. '"'"
Q.
\ '" I 1
:> 50
"I \,""
1 40
}.
1\ 2N3228.
"
.....
l-
30
I I\.
I
/ 2N3525
~r'OI 1
~ I I I'}. I""-.
a'" 20
_2N3528.1'
1
TC "75.C
t!! "'-., I
2N352~1 ' Tl
~ 10 -~Ni'9211 I r- TFA" 25C
'"
"i!'
,I I111
4 6 2
I 4 6
I I
2 4 6

2N3228, 2N3525, AND 2N4101 2N3528, 2N3529, AND 2N4102
JEDEC No. TO.66 JEDEC No. TO8
.340=-.-1 rOI--lI
.500
.470
.250 SEATING PLANE
'6
.~
to MIN [ .075
.050
* DETAILS OF OUTLINE
IN THIS ZONE QOTIONAL
3 PINS
.030 t.003
DIA.
92CS-9963R3
TERMINAL DIAGRAM FOR TYPES
2N3228, 2N3S2S, AND 2N4101
ANODE
TERMINAL
(CASEl
PIN 1: GATE
PIN 2: CATHODE
CASE: ANODE
TERMINAL DIAGRAM FOR TYPES

2N3S28, 2N3S29, AND 2N4102
[~J
PIN 1: CATHODE
PIN 2: GATE
PIN 3: ANODE
(CONNECTED
TO CASE)
oocram
Solid State
Division
4.5- Ampere Silicon

Controlleo Rectifiers
For Capacitive-Discharge Systems
For Low-Voltage Operation - 52400A (40942)*
For 120-V Line Operation - 52400B (40943) *
For 240-V Line Operation - 52400D (40944) *
~P~~~) --] 1 ~~~~,ECASE)
For High-Voltage Operation - 52400M (40945)*
\ CATHODE Features:
IPIN 1)
200-A surge current Shorted-emitter gate-
capability cathode construction
Low switchi ng losses Forward and reverse gate-
High di/dt and dv/dt dissipation ratings
capabilities Low forward voltage drop
at high current levels
These RCA types are all-diffused silicon controlled rectifiers These SCR's have an rms on-state current rating (IT [RMS])
(reverse-blocking triode thyristors) designed for high-peak- of 4.5 amperes and have voltage ratings (VDROM) of 100,
current low-average-current applications. Typical applications 200, 400, and 600 volts.
are ignition service, crowbars, and other capacitive-d ischarge
systems.
Non-repetitive peak reverse voltage

Gate open. . .
Non-repetitive peak forward voltage
Gate open. . .
RepetitIve peak reverse voltage'"
Gate open.
Repetitive peak off-state voltage'"
Gate open ..
On-state current:
TC = 75C, conduction angle = 1800
RMS. ITIRMS) ---------- 4.5 ---------
Average .. 'T(AV) --------- 3.3
For other conditions ---------See Fig.3 --------
Peak surge (non-repetitive) on-state current:
50-Hz, sinusoidal. 170 ---------
6OHz, sinusoidal. ---------200 --------
For more than one full cycle of applied principal voltage --------- See Fig.4 --------
Rate of change of on-state current
Vo "VOROM,IGT = 200 mA, tr = 0.5"' (SeeF'9121
Fusing current (for SCR protection):
TJ = ~40 to 1000C,t = 1.5 to 10 m, .
Gate power disslpation:-
Peak forward (for 1 J,J.S max ,J ---------- 40 ---------
Peak reverse --------- See Fig.8 --------
Average (averaging time = , 0 ms, max,l . --------- 0.5 --------
Temperature range:-
Storage,
Operating {case)
Pin temperature (durIng soldering):
For 10 s max. (pins and case) ,
See footnote on next page.
Footnotes for preceding page
..These values do not apply if there is a positive gate signal. Gate must be open or negatively biased .
Any product of gate current and gate voltage which results in a gate power less than the maximum is permitted .
Temperature measurement point is shown on the DIMENSIONAL OUTLINE.
LIMITS
CHARACTERISTIC SYMBOL For All Types UNITS
Min. Typ. Max.

(Gate open, T C ~ 1000C)
Forward at Vo = VOROM 100M - 0.2 3

mA
Reverse at VR ~ VR ROM IROM - 0.1 2
Instantaneous On-State Voltage:

iT ~ 100 A, TC = 250C, See Fig.5 v - 2.5 3 V
T
DC Gate Trigger Voltage:

Vo = 12 V (del, R L = 30 fl, T C ~ 25C VGT - 1.1 2 V
For other conditions See Fig.l0
DC Gate Trigger Current:

Vo = 12 V (de), RL = 30 fl, TC = 250C IGT - I 8 I 15 mA
For other conditions See Fig.9
DC Holding Current:
Gate open, initial principal current ~ 150 mA, T C ~ 250C IHO - I 9 I 20 mA
For other conditions See Fig.6
GateControlied Turn-On Time:

Vo = VOROM, IGT = 200 mA, tr = 0.1 ps, tgt - 1.6 2.5 ps
iT ~ 30 A (peak), T C = 250C (See Fig.ll)
Circuit-Commutated Turn-Off Time:

Vo ~ VOROM, iT ~ 18 A, pulse duration
= 50 ps, dv/dt = 20 V Ips, dildt tq - 20 40 ps
~ -30 Alps, IGT = 200 mA, T C = 750C
See Fig.14
Critical Rate of Rise of Off-State Voltage:

Vo = VOROM, exponential voltage rise, dv/dt 10 100 - Vips
gate open, T C = 1000C, See Fig.15
Thermal Resistance:
Steady-state
Junction-to-case ROJC - - 5
CIW
Junction-to-ambient ROJA - - 40
I~~----- "T
IHO
----1'
I I
"(BOlO
LiDO I Iv
I DSOM
I
VOROM
~
~ Boo.
I"
0
5
..? 0 COIIIOUCTION
~ ,;-~..:.~f?' ANGLE
~
0 !J.': b.!Y ~~
<.10 ~...,'
'"
~ 3
~~
.
:? ,,"

0
2 ,,0
~
z ~~~DOR~_S~~:~VEE
CURRENT [IT(RMSJ]~45AI
W
''"" AT CASE TEMPERATURE (Te j- 75-C I

0" 25
W
GAT~ CIO~TROlIMAY' l~S+ ek
~ 200 FOLLOWING SURGE CURRENT
0
;;; ""'- INTERVAL
" ..
........ .........
'-.....
PEAlED UNTIL JUNCTION
! 150 .........
TEMPERATURE HAS RETURNED
TO STEADY - STATE
0." RATED VALUE
W~
"'~
,>< ~Hl
~-,oo
W
5~ ~
f""
~ .........
~
~
50
0
--
0.5 I 15 Z Z5
INSTAI\lTANEOUS ON-STATE VOLTAGE lv,)-V
9lCS-19959
>
1,0
~ :; 8
~?; 6
OW 4
...o~~
~5
~>
in",
fg
~ . UPPER LIMIT OF PERMISSIBLE
2 AVERAGE (DCI GATE POWER
DISSIPATION AT RATED
01 CON ITiONS.
" 6 80.1 2 . 6 8 1 6 8'0
POSITIVE DC GATE TRIGGER CURRENT CIGT)-A
9255-4466
0.6 0.4 02
REvERSE GATE CURRENT IIGTR)-A
92CS-13360R3
,
I
I I
o-L _ Vo I
o_L:_ ---:-r ---

I
I
I I
,
I
/--- Olld!
!:E90~.
In I t I
roNT
o-L-j_ _ 1_1.- ---

r'd---ttrL.-
, I
~t9t---1
vGTr-~' I
0- l 1 _IO'Y. POINT
---------
Fig.13-Relationship between off-state volt-

age, on-state current, and gate-trigger
Fig.12-Rate of change of on-state current
voltage showing reference points for
with time (defining dildO.
definition of turn-on tir.1e (tgt).
CRITICAL d./dt ~
i.!.:O.63~
dl I
Fig. 14-Relationship between instantaneous on- pRe
state current and voltage showing
reference points for definition of cir- Fig. 15-Rate of rise of off-state voltage with time (defining
cuitcommutated turn-off time (tq). critical dvldtJ.

S2400 SERIES
i- 2SCREWS,632
NOT/llVA'LA6U
FnOMRC/ll
JEDEC TO-S
~ ~f::~:~:;;,;::","'"
~
~
o
/U-U-
ee
E>
...,,,"'..'u"',,"'"
~:~1~NSULATOR
H/llROW/llREPRICES
~
e _
0
6 {~~~~~~K INCHES MilLIMETERS
SYMBOL NOTES
MIN. MAX. MIN. MAX.
8.38 -,
(-3
G e 495334-1
~.~.YLg~:,~U{~~I~~~USHINGS
.b
A
.0
0.270
0.027
0.330
0.033
0.650
6.86
0.686
13.97
0.838
16.51 -
.
0.550
s----
SHOULDER
~~~~D~6R3i~~~~~'=
DIA."
.0, 0.444 0.524 11.28 13.31 -
0.050 In. 11.27 mml MAX. 0.136 0.146 3.45 3.71 -
/llV/llIL BLEAT
H4IlOW4RPRICES
PUBL'SHED F
L
-
0.360
0.115
0.440
-
9.14
2.92
11.18
-
,
2METAL WASHERS } P 900 NOMINAL - - -
2 LOCK WASHERS ~ NOT 4VA'L/llBL
~ FROMRCA
2HEX.NUTS@
Pin 1 - Cathode
In the United Kingdom, Europe, Middle East, and Africa, mounting
hardware policies may differ; check the availability of atl items Pin 2 - Gate
shown with your ReA sales representative or supplier. Case, Pin 3 - Anode
OO(]5LJ[]
Solid State
Division
S2600 S2610 S2620
Series
7-Ampere uLow-Profile"
For Power Switching, Power Control, Power Crowbar, and
Ignition Applications
Forward and reverse gate ratings High dv/dt capability

All-diffused center gate construction LC'w switching losses
II Low leakage currents, both forward and reverse Low thermal resistance
Low forward voltage drop at high current levels
High pulse-current capability for capacitor-discharge ignition circuits
Sub-cycle surge capability curve
The 52600, 52610, and 52620 series are all-diffused, TO-5). They may be used in capacitor-discharge ignition
three-junction, silicon controlled rectifiers (reverse-blocking systems (battery or magneto types) for internal combustion
triode thyristors) for capacitor-discharge ignition systems, engines, electronic igniters, and high-voltage generators.
high-voltage generators, and power-switching and control Other uses are power-control and power-switching circuits.
applications.
52610B (40658)', 52610D (40659)', and 52610M (40835)'
52600B (40654)', 52600D (40655)', and 52600M (40833)' have integral heat radiators; 52620B (40656)', 52620D
have a three-lead low-profile package (similar to the JEDEC (40657)', and S2620M (40834)' have integral heat
spreaders.
MAXIMUM RATINGS. Absolute-Maximum Values: S26006 S26000 S2600M

For Operation with Sinusoidal Supply Voltage at Frequencies up to S26106 S26100 S2610M
50160 Hz and with Resistive or Inductive Load. S26206 S26200 S2620M
NON-REPETITIVE PEAK REVERSE VOLTAGE"

Gate open. 250 500 700 V
NON-REPETITIVE PEAK FORWARD VOLTAGE"
Gate open. 250 500 700 V
REPETITIVE PEAK REVERSE VOLTAGE"
Gate open. 200 400 600 V
REPETITIVE PEAK OFF-STATE VOLTAGE"
Gate open. . . VDROM 200 400 600 V
RMS ON-STATE CURR ENT (Conduction angle = 1800)_ ITIRMS) See Figs. 7-11
PEAK SURGE (NONREPETITIVE) ON-STATE CURRENT: ITSM

60 Hz (sinusoidal) . 100 100 100 A
50 Hz (sinusoidal) 85 85 85 A
PEAK REPETITIVE ON-STATE CURRENTi- (See Fig_ 21):
Duty factor = 0.1 %. T C = 75C
Pulse duration = 51J,s(min.), 20 IJ,S(max.) . 100 100 100 A
VDM = VDROM, IGT = 200 mA, tr = 0.5 jJS ISee Fig_ 1) 200 A/jJs
MAXIMUM RATINGS, (Cont'd). S2600B S26000 S2600M
For Operation with Sinusoidal Supply Voltage at Frequencies up to S2610B S26100 S2610M
50160 Hz and with Resistive or Inductive Load. S26208 S26200 S2620M
NONREPETITIVE SUB-CVCLE SURGE CURRENT:

TC = 250C. single pulse, IGT = 50 mA,
10 IlS square pulse. . .
GATE POWER DISSIPATION":

PEAK FORWARD IIor 1 ,,, max,l "." PGM 40 40 40
PEAK REVERSE , ..... PRGM --- See Fig. 14 ---
AVERAGE (averaging time = 10 ms, max.) PG,CAV) 0.5 0.5 0.5
TEMPERATURE RANGE':
Storage .
Operating (case) . .. . .
LEAD TEMPERATURE lOuring soldering)":
For 105 max. for case or leads ...
t When rms current exceeds 4 amperes (maximum rating for the anode lead), connection must be made to the case.
-These values do not apply if there is a positive gate signal. Gate must be open, terminated, or have negative bias.
"Any values of peak gate current or peak gate voltage that yield the maximum gate power are permissible.
'For information on the reference point of temperature measurement, see dimensional outlines.
When these devices are soldered directly to the heat sink, a 60/40 solder should be used. Case heating time should be a minimum ... sufficient
to allow the solder to flow freely.
Vo
oJ_-- ------ --- -----

, , enes c-nvn 1;;0, - Ie
S2610 Series
CHARACTER ISTrC SYMBOL S2600 Series UNITS
S2620 Series
MIN. TYP. MAX. MIN. TYP. MAX.

(Gate Open, TC = +100oC)
mA
FORWARD, Vo = VOROM . 100M - 0.1 0.5 - 0.2 1.5
REVERSE, VR, = VRROM IROM - 0.05 0.5 - 0.1 1.5
INSTANTANEOUS ON-STATE VOLTAGE:

For iT = 30 A and TC = +250C . vT - 1.9 2.6 - 1.9 2.6 V
DC GATE TRIGGER CURRENT:
Vo = 12 V (DC)
RL = 30 n IGT
TC = +250C . - 6 15 - 6 15 mA
For other case temperatures. . See Fig. 16
Vo = 12 V (DC)
RL = 30n VGT
TC = +250C . . . , .. - 0.65 1.5 - 0.65 1.5 V
For other case temperatures. See Fig. 17
.
INSTANTANEOUS HOLDING
Gate Open and TC = +250C .
For other case temperatures.
CURRENT:
.
.
.. .. iHO - 9 20 -
See Fig. 18
I 9 20 mA
CRITICAL RATE-OF-RISE OF OFF-STATE VOLTAGE:

Vo = VOROM
Exponential rise, TC = +100oC .. . . dv/dt 20 200 - 20 200 - V/J1s
(See Fig. 3)
GATE CONTROLLED TURN-ON TIME:

Vo =VOROM ,iT = 4.5 A
IGT = 200 mA, 0.1 J1S rise time tgt - 1 2 1 2 - J1s
TC = +250C
(See Fig. 4)
CIRCUIT COMMUTATEO TURN-OFF TIME:

VD = VOROM, iT = 2 A
Pulse DuratiOn = 50 J1S
dv/dt = 20V /J1s, di/dt = -30A/J1s tq - 15 50 - 15 50 J1S
IGT = 200 mA at turn on, TC = +750C
(See Fig. 5)
THERMAL RESISTANCE:
Junction-to-Case . .. . ReJC - - 5 - - 5
Junction-to-Ambient (See dImensional outlines). ReJA - - 120 - - 30
(S2610 Series) C/W
Junction-to-Heat Spreader (See dimensional outline)
ReJHS - - - - I - I 7
(S2620 Series)
CRITICAL dv/dt ~
,/
, I
VRSOM----i ~VRROM
*:0.63-f-
t" RC
I In I di/dt
VS" 'T"--M
I
-~
50%IRM 'R
'0
I I 1
--I r'n
I
__, I-t--- '.-----j __ v0 _
~ VT I V Md'
, ~
I 1'"
CURRENT WAVE FORM: SINUSOIDAL ~ HEAT SINK

'":'":> LOAD: RESISTIVE
CONCUCTION
OR INDUCTIVE
ANGLE a 180
MOUNTING
ARRANGEMENT
l;; IL.LLL.L 18J_C=5C/W)
..''""
~
I-
",u
EOl80
100
HEAT
SINI(
Jt: POINT
SO~ER
EPOXY
ADHESIVE
OF
TEMPERATURE
MEASUREMENT;
SEE DIMENSIONAL
",-u
1-
OUTLINE, PG. 7
co .... 60
;
3
...
40
~
::>
..
~
x
~
20
2 4 6 8 10
AVERAGE ON-STATE CURRENT [I TtAVU - A
92LM-\\54R2
Fig. 6-Power dissipation vs. on-state current.

'"='">
.-'"
'"
~
~
.-
~ 100
CURRENT
CONDUCTION
WAVE FORM: SINUSOIDAL
ANGLE a 180
NOTE:
HEAT SINK
MOUNTING
ARRANGEMENT
18;_c:::
~
SO~~ER
HEAT
SINK
15CI",)
POINT
EPOXY
ADHESIVE
OF
TEMPERATURE
MEASUREMENT
~~llrr-----'
lJJ
Ct:
~
~
~
~ 100
CURRENT
LOAD:
WAVE FORM:
RESISTIVE
CONDUCTION ANGLE
SINUSOIDAL
OR INDUCTIVE
- 180
mil/mum==}
I CIRCUIT- BOARD
MOONTiNG
ARRANGEMENT
J_A'''"C/
L.0625~.MA~
(1.587mm)

"'u
u. FOR TEMPERATURE MEASUREMENT, ~;'
~l15 ....
ATTACH THERMOCOUPLE TO THYRISTOR
CASE THROUGH A SMALL HOLE :..J-I 75
ORILlEO IN THE HEAl SINK.
'"
;<.-u
o- "'.-
;<-
j 50 ~ 50
'":> '":>
i 25 =>
:>
25
x x
'":> '":>
9255- 3883R2 92SS-3BB4R2

Fig. 8-Maximum allowable case temperature VS. onstate current for Fig. 9-Maximum allowable ambient temperature vs. on-state current
S2500 series. for 2600 series.
CURRENT WAVE FORM: SINUSOIDAL I, HEAT SPREADER CURRENT WAVE FORM: SINUSOIDAL
I
o
LOAD: RESISTIVE OR INDUCTIVE =~~~T~t~I<~THERMAL
CONDUCTION ANGLE 180 ~~~I~J:~CSEpRJ~ANJJkO~. CONDUCTION ANGLE - 180
NOTE" 7.0C/W)
FOR TEMPERATURE MEASUREMENT, HEA~

ATTACH THERMOCOUPLE TO SPREADER THYRISTOR WITH INTEGRAL
HEAT SPREADER THROUGH A HEAT RADIATOR MOUNTED II.
SMALL HOLE DRILLED IN THE ON A CIRCUIT BOARD
HEAT SINK. _" (~~ BJ-A :; 30 C/W
.l;(F?M~ ~~~~~ROR POINT OF TEMPERATURE

MEASUREMENT
lr~
92SS-3885R2 92SS-3886R2
Fig. to-Maximum allowable heat-speader temperature vs. on-state Fig. It-Maximum allowable ambient temperature v,s. on-state current
current for S2620 series. for S2610 series.
SUPPLY FREOUENCY ~ 50/60 Hz (SINE WAVE)

CASE TEMPERATURE ~ 60 C
LOAD: RESISTIVE
REPETITIVE PEAK REVERSE VOLTAGE (VRRM)~MAXIMLN-RATED VALUE
AVERAGE ON-STATE CURRENT [IT(AV)]-MAXIMUM-RATED VALUE
GATE CONTROL MAY BE LOST DURING

__< 100
~I I'\. AND IMMEDIATELY FOLLOWING

SURGE CURRENT INTERVAL.
i=- '\ OVERLOAD MAY NOT BE REPEATED
~ ~ 80 UNTIL JUNCTION TEMPERATURE HAS
~E
"'\. I"'\. RETURNED TO STEADY-STATE RATED
"'.-
'z
r--... VALUE.
z", 60
~~ 60 Hz
"'u I--- 50 H;'"
'""'''' 40f----
~
-
=>>-
"'0; -.....;~
"", 20
""
lt~
0
O.~ 1.0 1.5 2.0 2.5 3.0

INSTANTANEOUS ON -STATE VOLTAGE (vTI-V
92C5-19037 92LS-1l50RI
Fig. t2-Peak surge on-state current vs. surge current duration for all Fig_ 13-lnstantaneous on-state current v,s. on-state VOltage for all
types. types.
,"",0
MAXIMUM ~MINIMUM GATERESISTANCE
SHORT CIRCUIT
CURRENT ('
"'(, .".~
(.s'~5!;.-If.
A'J;.RAGE
GATE POWER
LIMIT'
_"
0.2 W
@ -10 >
I
ffi
() (,.". Jf ..,-202:
(,-\> (0
"'''''04() ~ ~;
~~~ ::.
w
1: -If.(/1t~ -30 t5
.."
4-1-
"'oJ
~~
~ -40
>
w
...
..,<l:
:::
~m~~~CUlT" -SO ~
, ~OLTAGE >
w
0:
-60 UPPER LIMIT OF PERMISSIBLE
2 AVERAGE lOCI GATE POWER
OISSIPATION AT RATEO
0.' CON ITIONS. (SEE FIG. 16 17) e.
4 6 80.1 2 4 6 8 I Z 6 810 2
POSITIVE GATE-TO-CATHODE TRIGGER CURRENT (tGT)-A
92SS-3888RI
Fig. 15-Gate pulse characteristics for forward triggering mode. ;
-40 -20 0 20 40 60
CASE TEMPERATURE ITCI-C
92SS-3889RI
IGT
(SEE FIG. 20
FOR VALUES)
SINE -WAVE PULSE ( NON-REPETI TlVE)
SINGLE H~~iE~ BLOCKING VOLTAGE DURATION
NO REAP SQUARE PULSE.IOj'.s
r
'";i
> ~
~I
;2~E";~~:ERATURE (Tel: 25C 100
11: .... 90
Ui
'".
'"z
cl "
-''''
ISJOO
6
~
j UNSAFE OPERATION
~-
, I
~i
80
10
~
~~
-,,,, @I
"=......
z 60
~~
.
.~~
~u ~I ~G 50,- I " ,~
'PULSEDURATION I X I100,''-
o~ 100 40
",'" ~~ "
< DUTY FACTOR ("J '" REPE rmON INTERVAL
3~
~
6 ~
w
~1 s~~~~7\ 30
I J .. ..:-
"'" wlCURRENT~ 20
i:' ~ J -r-- I PULSE I
.,
10
-IOURATIc.r-
2 4 6 8 Ims
6. 10m, 0
1 4 , 80.1 1 , I 1 4 , '10
2 4 6 100~s AT"O"CURRENn
SURGE
'O~, CURRENT PULSE DURATION <SEC>(MEASURED 92C5-'9039 DUTY FACTOR - PER CENT
SS-3894
.. ) vs. duty
k pulse current (repetltfve
21-Derating curv~ f?~ ~e~rcuit.
. 20-Sub-eycle surge capability.
Fig. factor for the Igmtfo
DIMENSIONAL OUTLINE FOR S2610 SERIES DIMENSIONAL OUTLIN E FOR S2620 SERIES
~D~~
'J
T~.
JJ 0
o?~
TO-S PACKAGE
WELDED TO
0
DIMPLED
0{
STANDOFFS
MOUNTING TAB
(LEAD NO. 2 BEHIND
MOUNTING TAB)
HEAT-RADIATOR
HEAT RADIATOR
(NOTE 1)
~PI
INCHES MilLIMETERS
,
SYMBOL NOTES
MIN. 1. MAX. MIN. .1 MAX.
-
I A 0.22 5.58
INCHES MILLIMETERS
SYMBOL NOTES A1 0.75 19.05
MIN. MAX. MIN. MAX. 1.0 25.4
D
A 0.630 16.00 Dl 0.406 10.31
D 1.205 1.235 30.61 31.37 D2 0.14 I 0.16 3.55 I 4.06
D1 0.745 0.755 18.923 19.177 D3 0.188 4.77
E 0.875 0.905 22.22 22.99 E 0.40 10.16
F 0.040 0.055 1.02 1.40 E1 0.32 8.12
F1 0.170 0.225 4.32 5.72 E2 0.156 3.96
L 0.885 - 22.48 - F 0.02 0.05
o P 0.295 0.305 7.493 7.747 L 0.95 - 24.13 1
o P,
N
0.093
0.048
0.09S
0.062
2.362
1.21
2.413
1.57
N
N1
0.69
0.55
I
0.71 17.52 118~03
13.97
Nl 0.998 1.002 25.349 25.450 3 N2 0.75 19.05
N2 0.687 0.689 17.45 17.50 3 oP 0.072 Rad. 1.83 Rad.
~ 0.048 0.052 -l 1.219 -l,.320 1 L_o P, .1 0.094 Dia.
l 2.39 Dla.
1 2
J
NOTES: .. h. elect,ole55 nickel plote NOTES:
1. 0.035 C.R.s., IlnlS.. I . ted-circuit boord 1. Min. length, 3 leads.
ded hole size or pnn 2. Two holes.
2. Recommen mm) dia.
is 0.070 in. (1.78 . 91SS.J900Rl
3. Measure d at bottom of heat radiator
REFERENCE POINT FOR
INCHES MilLIMETERS TEMPERATURE MEASUREMENT.
SYMBOL NOTES
MIN. MAX. MIN. MAX. (TOTAL THERMAL RESISTANCE FROM
JUNCTION TO HEAT SINK. 10 C/W) 92SS-3898R2
.-
A
.0
0.160
0.017
0.180
0.021
'.06
0.432
9.017
4.57
0.533 2
Scotch brand electrical tape No. 27 (thermo setting one side):
.
0.355 0.366 9.296
.0, 0.323 0.335 8.204 8.51 Minnesota Mining & Mfg. Co., 5t Paul, Minnesota, or equivalent.
0.190 0.210 '.83 5.33 An epoxy such as Hysol Epoxy Patch Kit 6C, Hysol Corporation,
., 0.100 TRUE POSITION 2.54 TRUE POSITION
... 0.15 0.035 0.381 0 .
'.5 Olean, N.Y. 14761, or equivalent.
j 0.028 0.035 0.711 0 . 5 ~or heat-sink temperature measurement, the thermocouple (wire I'tO
k
L
0.029
0.985
I 0.045
1.015
0.737
25.02
1.14
25.78
3.5
2
larger than
drilled In
AWG
(but
No. 26) should
not through)
be Inserted
the heat
In
sink
II small, shallow
at the
hole
Indicated
p 0.100 2.54 1 temperature reference point.
0
.
,
.,. 0.007

0.179
6
5.7 Fig. 22-Suggested mounting

insulated from heat sink).
arranflllmtlnt for 52620 SlNiBS (case
1. This zone is controlled for automatic handling. The v.iation in actual diametM
oMthin the zone shall not exceed 0.012 in. (0.279mml.
2. (Three LNdsI ~ b ~ies between seating plane and 1.015in. (25.78mmJ.
3. Measured from maximum diameter of the actual device.
4. leads having maximum diameter 0.021 in. (0.533mmJ measured at the lUting plane of the
device shall be within 0.007 in. (0.178mml of their true positions relative to the maximum
width tab.
5. The deviCI may be measured by direct methods or by the pp and pging procedure de TERMINAL CONNECTIONS
scribed on pp dr~ing GS-1 of JEOEC public.ltion 12E. May 1964.
6. Details of outline in this zone optional. S2600 SERIES
7. Tab centerline.
CASE TEMPERATURE MEASUREMENT Lead 1 - Cathode
The specified tempet"atur.reference point shOllld be used when making temperature Lead 2 - Gate
measurements. A lowmass temperatura probe Of" thermocouple having wire no larger
than AWG No. 26 should be attached at the temperature reference point. Case, Lead 3 - Anode
S2610 SERIES
Lead 1 - Cathode
Lead 2 - Gate
Case, Heat Radiator - Anode
Lead 1 - Cathode
Lead 2 - Gate
Case, Heat Spreader - Anode
527108, 52710D, and 52710M are all-diffused, three-
junction silicon controlled-rectifiers having integral heat
radiators. They are variants of the 2N3228, 2N3525, and
2N4101, respectively."
The 52710 series is designed to meet the needs of many

power-control and power-switching applications in which
heat sinks are required but where the design of special
cooling systems to achieve the full current rating of the
thyristor is not warranted.
Thyristor Thyristor
The radiator design of these devices has tabs to allow with without
printed-circuit board mounting and holes to allow chassis
Heat Radiatar Heat Radiator
mounting if desired.
527108 (40504) 2N3228

Ratings and characteristics given for the 2N3228, 2N3225, and
527100 (40505) 2N3525
2N4101 in ReA data bulletin File No. 114 are also applicable to the
devices in the 5271 a series. 52710M (40506) 2N4101
FORCED - AIR COOLED, 400 TO 1000 FEET/MINUTE

THYRISTOR WITH HEAT RADIATOR
100
THYRISTOR WITH OUT HEAT RADIATOR
?r-
z
w 80 II
in
:;:u
<
It RaJA' 9_5C /W =i=
wi
-.Jw 60
CD 0::
<~
~r-
0<
-.JO::
-.Jw 40

RaJA: 28 C/W
~
B
<"-:;: RaJA: 40 C/W
:;:w
~r-
:;: 25
x 20
<
:;:
o I
AVERAGE ON-STATE CURRENT [IT(AvTI-A
Fig. 1 - Maximum allowable ambient temperature
V5. on-state current.
DIMENSIONAL OUTLINE
JEDEC TO-66 WITH HEAT RADIATOR
-2 MOUNTING
TABS
{NOTE 31
92CS -13383R4
INCHES MILLIMETERS
SYMBOL MIN. MAX. MIN. MAX. NOTES
A 0.620 15.75
,b 0.028 0.034 0.711 0.864
0 0.750 0.760 19.05 19.30
0, 0.370 C.3as 9.40 9.78
,
0, 0.820 0.920 20.83 23.37
.
1.297 1.327 32.94 33.70
14.37
", 0.546 0.566 13.87
0.190 0.210 4.83 5.33

0.30 0.55 7.62 13.97
"
l
0.175
0.270
0.210
-
'.44
6.86
5.33
-
N 0.052 0.066 1.32 '.65
N, 1.098 1.102 27.89 27.99 1
N, 0.. 0.452 11.38 ".47
N3 0.099 0.113 0.25 0.29
N, 0.498 0.502 12.66 12.75
W 0.048 0.060 '.22 1.52
1 Meelur..tiltbonomof"-l.xl~lor
'100J5lftI0889IC,RS .. ,onpiated.
3.R_......-cl hole llf lot pnnled<OfO;U01 boIfd
O.070on.(l11Sld'l
Pin 1: Gate
Pin 2: Cathode
Radiator, Case: Anode
[JClcrBLJD
Solid State
Division
a-Ampere
For Power Switching, Power Control, and
Ignition Applications
Features:
- Glass passivated chip - High dv/dt capability
- 8-A (RMS) on-state current ratings - Low on-state voltage at high current levels
- 100-A peak surge capability - Low thermal resistance
- Shorted-emitter gate-cathode construction ... contains an internally diffused resistor
between gate and cathode
- Center gate construction ... provides rapid uniform gate-current spreading for faster
turn-on with substantially reduced heating effects
- Package design suitable for mounting on a printed-circuit board
52800A, 528008, and 52800D are medium-power silicon The unique plastic package design provides easy package
controlled rectifiers designed for switching ac and de mounting and low thermal resistance, allowing operation at
currents. These reverse-blocking thyristors switch from the high case temperatures and permitting reduced heat-sink size.
off-state to the on-state when both the anode and gate These 5CRs can be used in lighting and motor-speed control,
voltages are positive. Negative anode voltages make these capacitor-discharge ignition circuits, high-voltage generators,
devices revert to the blocking state regardless of gate-voltage automotive applications, and power-switching systems.
polarity.
MAXIMUM RATINGS. Absolute-Maximum Values:
S2800A S2800B S28000
NON-REPETITIVE PEAK REVERSE VOLTAGE" (40867)" (40868)" (40869)"
Gate Open. . . 125 250 500
NON-REPETITIVE PEAK FORWARD VOLTAGE"
Gate Open. . . 125 250 500
REPETITIVE PEAK REVERSE VOLTAGE"
Gate Open. 100 200 400
REPETITIVE PEAK OFF-STATE VOLTAGE"
Gate Open. 100 200 400
RMSON~TATECURRENT
For T C of +80oC and Conduction Angle of 1800. IT(RMS) 8 8 8
PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT: ITSM
For one cycle of 400-Hz applied principal voltage. 200 200 200
For one cycle of 60-Hz applied principal voltage 100 100 100
For one cycle of 50-Hz applied principal voltage 85 85 85
For more than one full cycle of applied pnncipal voltage See Fig. 7.
RATE OF CHANGE OF ON-STATE CURRENT
VD = VDROM, IGT = 80 mA, I, = 0.5 ~s ISee Fig. 3) . 100 100 100
GATE POWER DISSIPATION":
PEAK FORWARD (fo, 10 ~s max.) 16 16 16
PEAK REVERSE. . . See Fig. 13.
AVERAGE (averaging time = 10 ms max.l, 0.5 0.5 0.5
TEMPERATURE RANGE':
Storage . -65 to +150
Operating (Case) . . ......... -65 to +100
Soldering (10 sec. max.l 250
These values do not apply if there is a positive gate signal. Gate must be open or negatively biased.
4-Any values of peak gate current or peak gate voltage which result in an equal or lower power are permissible.
'For information on the reference point of temperature measurement, see Dimensional Outline.
Numbers in parentheses (e.g. 40867) are former ReA type numbers.
ELECTRICAL CHARACTERISTICS, At Maximum Ratings and at Indicated Case Temperature (TC)
Unless Otherwise Specified.
LIMITS
CHARACTERISTIC SYMBOL S2800A S2800B S28000 UNITS
MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.
PEAK OFFSTATE CURRENT:

(Gate Open, TC = +1000 CI
FORWARD, VD = VDROM IDOM - 0.1 2 - 0.1 2 - 01 2 mA
REVERSE (REPETITIVE), VR = VRROM IROM - 0.1 3 - 0.1 3 - 0.1 3 mA
INSTANTANEOUSONSTATE VOLTAGE:
For iT = 30 A and TC = +250C vT - 1.7 2.0 - 1.7 2.0 - 1.7 2.0 V
DC GATE I RIGGER CURRENT:

. VD = 12 V (DC)
RL=30rl IGT - 8 15 - 8 15 - 8 15 mA
TC = +250C
For other case temperatures. .. .. See Fig. 9 .
I -I oj
VD = 12 V (DC)
R L = 30 11
TC = +250C
For other case temperatures
VGT
-I 09 11.5 1- I 09 11:,
See Fig. 10.
15 V
-I
Gate Open and T C = +250C . iHO - I 101201-1 10 1 20 I 10/ 20 mA
For other case temperatures. S.e Fig. 11
CRITICAL RATEOFRISE OF OFFSTATE VOLTAGE:

VD = VDROM 7J 3001 150 13001-
Exponential rise, T C = +1 aooe (See Fig. 2.) dv/dt - 13012001- Vips
For other case temperatures ....... See Fig. 14.
GATE CONTROLLED TURNON TIME:

VD = VDROM, iT = 4.5 A. iT = 2 A
IGT = 80 mA, 0.1 J1S rise time tgt - 1.6 2.5 - 1.6 2.5 - 16 2.5 ps
TC = +250C
(See Fig. 5.1
CIRCUIT COMMUTATED TURNOFF TIME:

VD = VDROM . iT = 2 A
Pulse Duration::; 50 J1S
dv/dt = 200V/ps, di/dt =-10 Alps tq - 10 35 - 10 35 - 10 35 ps
IGT = 200 mA at turn on, TC = +750C
(Se. Fig. 4.1
THERMAL RESISTANCe:
Junction-la-Case . . . . . . . . . . . . . . . . .. ROJC - - 2.2 - - 2.2 - - 2.2
C/W
Junction-ta-Ambient ROJA - - 60 - - 60 - - 60
I,
,I
r~~-----~~---,'
VRSO,..----l :"-V RROM
*"0.63+
t" RC
Vo
oJ_-- ------, --- ----- I Int
VIO"T'-~
I di/dt
10
I
/-- difd!
I
I
SO$ IRM --;J,I'R
I
ITM---I I
I
r'"
--ff-T-" ----j __ ,0 _
--~ VT I V d. d'
I ~
I '}-"
Fig. 4-Relationship between instantaneous on-state current and

voltage, showing reference points for definition of circuit-
commutated turn-off time (tgJ.
CURRENT WAVEFORM; SINUS01D/L

CONDUCTION, ANGLE: 180
SHOWN ON DIMENSIONAL OUTLINE
70
50 100 150 o 2 4 6 8 10 12
AVERAGE OR RMS ON-STATE CURRENT [IT(AV) OR IT(RMSl]-A
DC GATE TRIGGER CURRENT (lGTl-A
92C5-19058 92SS-3982Rl
8 468 468
I 10 100 1000
NUMBER OF FULL CYCLES IN SURGE DURATION
92LS-1351R5
REVERSE GATE CURRENT ( I GR 1 - A
03 02 01
AVERAGE GATE
POWER LIMIT 1500
~~
",I 1250
"'=
I<~
, >
~~ tooo
",'"
t-'"
"''''
I<'J
--,0
750
",>
U'"
t-t-
1<'" 500
u~
......0 250
0
20
a 2 4 6 8 10
RMS ON STATE CURRENT [IT(RMS~-A92SS'4163RI
DIMENSIONAL OUTLINE
(JEDEC TO-220 AB)
INCHES MI LLIMETERS
r-- 1
LI__
H A 0.160 0.190 4.07 4.B2
\EAIlHG PLAHE A LQ? b

bl
0.025
0.012
0.040
0.020
0.64
0.31
1.143
1.02
0.51
"
b2 0.045 0.055 1397
F TEMPERATURE
D 0.575 0.600 14.61 15.24
MEASURING POINT E 0.395 0.410 10.04 10.41
El 0.365 0.385 9.28 9.77
E2 0.300 0.320 7.62 8.12
., 0.180
0.080
0.020
0.220
0.120
4.57
2.03
0.51
5.58
3.04
1.39
F 0.055
H (1.135 0.265 5.97 6.73
L 0.500 12.70
Ll 0.250 6.35
P 0.141 0.145 3.582 3.683
Q 0040 0.060 1.02 1.52
Z 0.100 0.120 2.54 3.04
No.1 - Cathode
Mounting Flange, NO.2 - Anode
No.3 - Gate
Q SCREW. 6-32
~"'OT"'V""l"'8LEFROMRC'"
~ NR231A
~~~:~~GULAR METAL
AVA'LABLE AT~UBLIS'HO
HAROWilREPR,CU
.
- OF103B
M'CA 'NSULATOR
~
HOLE DIA "O.1450.1.1m
e ~;:~~'::~\ItCE

HEATS'NK
~ 6 (CHASSIS)
4953347
~ INSULATING BUSHING
1.0. ~ 0.156 m.14.00 mml
METAL
lOCK
WASHER
WASHER
@]
@
e--- ~~~~~~~1~2~1;~~
'""u,"wn" ""'"
MAX.
HEX NUT @ NOT AYAILA9LE fROM RCA
SOlDERlUG~
HEXNUT @

All-Diffused Silicon Controlled Rectifiers
for Inverter Applications
53700B, 53700D, and 53700M* are all-diffused three-

junction silicon controlled rectifiers intended for use in
inverter applications such as ultrasonics and fluorescent
lighting. They feature fast turn-off, high dv/dt, and high di/dt
characteristics, and may be used at frequencies up to 25 kHz.
Each of these devices has an rms on-state current rating of 5

amperes at a case temperature of +600C. The 53700B,
Forward and IT(RMS)
53700D, and 53700M have forward and reverse off-state
Type Reverse @
voltage ratings of 200, 400, and 600 volts, respectively.
Voltage TC = +600 C
V A
S3700B (40553)- 200 5
S37000 (40554)- 400 5

RMS OnState Current -
5 Amperes at TC = + 600 C S3700M (40555)- 600 5
ANODE TOCA THODE

VOL TAGECURRENT CHARACTERISTIC
High dv/dt Capability -
100 V/IlS minimum
High di/dt Capabi lity -

200 A/Ils
Shorted Emitter and Center Gate Design

Removes restrictions on forward and
reverse gate voltage and peak gate
current
Principal voltage is the voltage between lhe main ter-

minals. Principal voltage is called positive, or forward,
when the anode potential is higher than the cathode potential,
and called negative when the anode potential is lower than
the cathode potential.
Principal current is the current flowing between anode
and cathode.
Absolute-Maximum Ratings, for Operation with Sinusoidal AC Supply
Voltage At Low to Ultrasonic Frequencies, and with Resistive or Inductive Load
RATINGS MAXIMUM VALUES UNITS
S3700B S37000 S3700M
Non-Repetitive Peak Reverse Voltage,

VRSOM
Gate Open. . . . . . . _. . . . . . . . . . ... 330 660 700 V
Repetitive Peak Reverse Voltage,
VRROM
Gate Open . . . ~. . . . . . . . . . . . . . . 200 400 600 V
Repetitive Peak Off-State Voltage,
VDROM
Gate Open. . . . . . . . . . . . . . . . . . .. 700 700 700 V
On-State Current:
For case temperature of +600 C and 60 Hz
Average DC value at a conduction
angle of 1800, IT(AV) .......... 3.2 3.2 3.2 A
RMS value, IT(RMS) ............ 5 5 5 A
For other conditions ............ See Fig.9
Peak Surge (Non-Repetitive) On-State
Current, ITSM
For one cycle of applied voltage ..... 80 80 80 A
For more than one cycle of applied
vol tage. . . . . . . . . . . . . . . . . . . . . See Fig.ll
Sub-Cycle for Fusing, 12t
For a period of 8.3 ms - .......... 25 25 25 A2s
Critical Rate of Rise of On-State Current,
Critical di/dt
VOX = Vmmo rated value,
IGT = 50 mA, 0.1 ~s rise time ...... 200 200 200 A/~s
Gate Power Dissipation*
Peak, Forward or Reverse, for 10 ~s
duration, P GM .............. 13 13 13 W
Average, PG(AV) ............... 0.5 0.5 0.5 W
Temperature:
Storage, T stg' ................. -40 to +150 -40 to +150 -40 to +150 c
Operating <Case), TC ............ -40 to +100 -40 to +100 -40 to +100 c
*Any values of peak gate current or peak gate voltage to give the maximum gate power are permissible.
For information on the reference point of temperature measurement, see Dimensional Outline.
Characteristics at Maximum Ratings (unless otherwise specifiecl), ancl at Inclicatecl
Case Temperature (T C)
CHARACTERISTICS LIMITS UNITS
S3700B S3700D S3700M
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
Breokover Voltage, V(BO)O

Gate Open
At T C = +1000 C . . . . . . . . . . . . .. 200 - - 400 - - 600 - - V
Gate Open
At TC = +1000 C
Forward, 100M
VOO = V(BO)O rated value ....... - 0.5 3 - 0.5 3 - 0.5 3 mA
Reverse, IRROM
VRO = VRROM .............. - 0.3 1.5 - 0.3 1.5 - 0.3 1.5 mA
Instantaneous On-State Voltage, vT
For an on-state current of 30 A and
TC = +250 C ... - ............ - 2.2 3 - 2.2 3 - 2.2 3 V
(See Fig.13!
DC Gate Trigger Current, IGT
At TC = +250 C ............ - .. - 15 40 - 15 40 - 15 40 mA(dc)
(See Fig.S)
DC Gate Trigger Voltage, VGT
At TC = +250 C ............... - 1.8 3.5 - 1.8 3.5 - 1.8 3.5 V(dc)
(See Fig.S)
Holding Current, IH
At TC = +250 C .............. - 20 50 - 20 50 - 20 50 mA
Critical Rate of Rise of Off-State
Valtage, Critical dv/dt
VOO = V(BO)O (rated value), linear
rise, and TC = +800 C ......... 100 250 - 100 250 - 100 250 - V/~s
(See waveshapes of Fig.2)
Gate-Controlled Turn-On Time, t t
(Delay Time + Rise Time) g
VOX = V(BO)O rated value, ITM =

2 A, IGT = 300 mA, 0.1 ~s rise
time, and TC = +250 C ......... - 0.7 - - 0.7 - - 0.7 - ~s
(See waveshapes of Fig.3)
Circuit-Commutated Turn-Off Time, t
<Reverse Recovery Time + Gate q
Recovery Time)
VOX = V(BO)O rated value,
ITM = 2 A, 50 ~s min. pulse
width, VRX = 80 V min.,
rise time = 0.1 ~s, dv/dt =
100 V/~s, diR/dt = 10 A/~s,
~T = 100 mA at turn-on,
GT = 0 V at turn-off, and
TC = +800 C ............... - 4 6 - 4 6 - 4 6 ~s
(See waveshapes of FigA)
Vox
r---------
oJ_-- ------ --- ----- Vox
j,o% POINT-I -
I
!----- di/d' - -~~~-
I
t
I
dV/dl~'
tgri
------J
I
I

.. - ._. --
OF POSSIBLE TRIGGERING POINTS

FOR VARIOUS TEMPERATURES. PERMITTED PULSE WIDTHS
6
FOR INDICATED PEAK
FOR_ARO GATE POWER
-
~
4
2
\'" A
'" I", ,/ v
...
~ 10 = ~~~~M~GMEG:OTREI~~:~~~~O
MAXIMUM GATE
~v lOp.s
"'-
0
>
, = JUNCTION TEMPERATURE ITj)
RESISTANCE
lOOps ....~'"
:
w 6- Tj--IOOC ~\~"\
-- "- <,,,-<' "'~~

4 __
" "'- "-
1m,
""" ./ ~~~"'..,
0 ~25 C ./
1"- t----
0
z
5
./
"- /
-
2
V
~ .1000 C
)of;:: AVERAGE GATE
5 1.0

DISSIPATION
0.5
LIMIT
WATT
4
-- .1000 C .25 C Tj'"
MAXIMUM
CURRENT
JUNCTION
_woe
GATE TRIGGER
FOR INDICATED
TEMPERATURE ITjl
/
2
I
MAXIMUM VOLTAGE AT WHICK
0.1 Tj'" .1000 C
I
6 8 6 6
0.1 I~
GATETOCATHOOE CURRENT - AMPERES
~
K) ~
I
~
w
15 ~
w
20 ~
2S ~
MAXIMUM GATE ..
RESISTANCE
~Il Il~
o I 2 3 4
AVERAGE ONSTATE CURRENT [IT(AY)]-
AMPERES
SUPPLY fREQUENCY 60 Hz SINE WAVE

CASE TEMPERATURE PRIOR TO SURGE 600 C
LOAD RESISTIVE
REPETITIVE PEAK REVERSE VOLTAGE (VRROM) MAXIMUM RATED VALUE
AVERAGE ON-STATE CURRENT OT(AVl1- MAXIMUM RATED VALUE
~~
_'0 I
I
I
I
I I
I
I
,
III
III II-L
I I
I~ii
~1 I, I ~ I
~! '\. :1;1 II
~ ~60
- H-,-l- r-h
~~ I' I I
PULSE HEIGHT 10 A (PEAK) ~~
w~
~a40
i' I
PULSE .IDTH AS INDICATED

VORXN. RATED VALUE
WAVEFORM SINUSOIDAL i~
~ t;;zo I II
--t
. .. ..
THERMAL IMPEDANCE, JUNCTIONTI).
I II
.
CASE SOC!. i!!
, , ,
0.5 1.5 2 2.5 3

INSTANTANEOUS ON-STATE VOLTAGE ('T)-YOLn
9'2LS-2344
-DC
SCR2
L,
-- L,
0,
" ", ",

"
SIX eO-WATT
LAMPS CON-
NECTED IN
PARALLEL
".
"5 02
'5 "2
D.
"
L2
"6
SCRf
C1 C2: 0.01 >IF. 1200 V <Ballast Capacitors) R1 R2: 1.2 kQ. 5 W

C3: 0.01 tJF. 600 V R3: 200 Q. 10 W
C4 C5: 0.02 tJF. 600 V T: Core, 8 pieces of Indiana General No.
D1 D2: Fast-Recovery Diodes. 6 A. 600 V CF-60Z Material 05, or equivalent.
D3 D4: 1N574 Cross Section, 8 cmZ
L1 L2: 32 >IH N1 N6 - 30 Turns of No.1S Magnet Wire
L3: 131 Turns of No.15 Magnet Wire on N2 N5 - 13 Turns of No.1S Magnet Wire.
Arnold Engineering Core No.A4-04117. 2 Stranda
or equivalent N3 N4 - 52 Turns of No.1S Magnet Wire.
2 Strands
",
0,
"" '"
".
1'5 "6
Q1: RCA-4043S R4 R12 R15 R\7' R1S: 22 kQ. 1/4 watt

Q2' Q3' Q4: RCA-2N3053 R5 Rll: 10 kQ potentiometer
c1 C2: 0.003 tJF. 100 V R6: 10 kQ. 1/4 watt
C3 C4: 0.02 >IF. 100 V R7: 1.5 kQ. 1/4 watt
C5: 25 tJF. 25 V. electrolytic RS' R9' R13' R\4' R16: 6S0 Q. 2 watts
DI, D2, D3: Transitron type TIG, or equivalent R19: 5.6 kQ. 1/4 watt
D4: Motorola type 1M20Z1O. or R20: 33 kQ. 1/4 watt
equivalent R21 R22: 10 Q. 1/4 watt
Neon Lamp: GE type NE-S3. or equivalent TIt TZ: Sprague Pulse Transformer type
R1 R3: 1 kQ. 1/4 watt 42Z109. or equivalent
R2 RlO:~ kQ. 1/4 watt
Fig. 15- Typical trigger pulse generator for 500watt, 8kHz fJuorescent/ight control inverter circuit.
l
.500
.470
r
I:;,~e::.~,
340 (B 64) ('~I;O) 075
t DETAILS OF OUTLINE
IN THIS ZONE OPTIONAL
.107
093
272 )
( 236
2 MOUNTING HOLES
210
.190
.152
.142
CIA (3.86)
. 3.61
(533)
4.83
Pin 1: Gate
Pin 2: Cathode
Case: Anode
File No. 690
Thyristors
[JU(]5LJD 53704A
537048
53714A
537148
Solid State
Division 537040 537140
53704M 53714M
537045 537145
For Inverter Applications

Features
Fast turn-off time-S J.l.S max, Center gate construction .... provides
S3704A,B,D,M,S High di/dt and dv/dt capabilities rapid uniform gate-current spreading for
H-1340
Shorted-emitter gate-cathode construction faster turn-on with substantially reduced
... contains an internally diffused heating effects
resistor between gate and cathode
100 V 200 V 400 V 600 V 700V
~Package Types Types Types Types Types
To-66 53704A S3704B 537040 S3704M S37045
JEDEC TO-66 S3714A,B,D,M,S To-66 with
With Integral Heat Radiator H-1470A
S3714A 53714B S37140 53714M S3714S
Heat Radiator
RCA-S3704 and S3714-series types are all-diffused, silicon con- power supplies, induction heaters, cycloconverters, and fluo-
trolled rectifiers (reverseblocking triode thyristors) designed for recent lighting. These types may be used at frequencies up to
inverter applications such as ultrasonics, choppers, regulated 25 kHz.
S37D4A S3704B S3704D S3704M S3704S

MAXIMUM RATINGS, Absolute-Maximum Values: S3714A S3714B S3714D S3714M S3714S
NON-REPETITIVE PEAK REVERSE VOLTAGE:

Gate Open .. . . VRSOM 150 300 500 700 800 V
NON-REPETITIVE PEAK OFF-STATE VOLTAGE:
Gate Open . VDSOM 150 300 500 700 800 V
REPETITIVE PEAK REVERSE VOLTAGE:
Gate Open . VRROM 100 200 400 600 700 V
REPETITIVE PEAK OFF-STATE VOLTAGE:
Gate Open .. VDROM 100 200 400 600 700 V
ON-STATE CURRENT:
..
0
TC = 60C. conduction angle = 180
RMS . 'T(RMSI
.. 5 A
Average ..
'T(AVI
.. 3.2
See Figs. 2,3,4 .. A
... ..
60 Hz (sinusoidal) .
For more than one full cycle of applied principal voltage
'TSM
80
See Fig. 5 .. A
RATE OF CHANGE
VD =VDROM' IGT
OF ON-STATE
=
50 mA, tr =
CURRENT
0.1 !'s (See Fig. 11) di/dt .. 200 AI!'s
FUSING CURREN"';, (for SCR protection):
T J = -40 to 100 C, t = 1 to 8.3 ms 12t .. 25 .. A
.
Peak Forward (for 10 IJSmax" See Fig. 9) ....
Peak Reverse (for 10 ~s max., See Fig. 81 ................
PGM
PRGM
..
13
13 .... W
W
Average (averaging time = 10 ms max.l PG(AV) 0.5 W
TEMPERATURE
Storage
RANGE:
Operating (Case)
.
.
Tstg
TC
.... -40
40
to 150
to 100 .. c
c
PIN TEMPERATURE lOuring soldering):
At distances ~ 1/32 in. (0.8 mml from seating
for 10 s max. .
plane
. Tp . 225 .. c
These values do not apply if there is a positive gate signal. Gat~ must be open or negatively biased.
For temperature measurement reference point, see Dimensional Outline.
LIMITS
CHARACTERISTIC SYMBOL FOR ALL TYPES UNITS

Except as Specified
MIN. TYP. MAX.

(Gate open, TC = 100C)
Forward Current (100M) at Vo = VOROM ........ lOOM - 0.5 3
mA
Reverse Current (I ROM) at VR = VRROM ........ IROM - 0.3 1.5

iT = 30 A (peak), TC
= 25C . .. .. .......... ...
....... . . ........ .. . .... .
vT - 2.2 I 3 V
See Fig. 7
Instantaneous Holding Current:
Gate open, T C = 25 C ........................ iHO - 20 50 mA
Critical Rate of Rise of Off-State Voltage (See Fig. 12):

Vo = VOROM' exponential voltage rise,
Gate open, T C = 80C . . . . . . . . . . . . . . . . . ... .. .. dv/dt 100 250 - V/IJ.S
OC Gate Trigger Current:

Vo = 12 V (de), RL = 30 n, TC = 25C . . ... ... . . IGT - 15 40 mA
For other conditions . .. . . .. . ... ............ . . See Fig. 9
OC Gate Trigger Voltage:
Vo = 12 V (de), RL = 30 n, TC = 25C ...........
For other conditions ..........................
VeT -
I 1.8 13.5
See Fig. 9
V
Gate Controlled Turn-On Time:

(Oelay Time + Rise Time)
For VOX = VOROM, IGT = 300 mA, tr = 0.1 IJ.S,
IT = 2 A (peak), T C = 25C (See Fig. 10) .......... tgt - 0.7 - /-IS
Circuit Com mutated Turn-Off Time:

VOX = VOROM, iT = 2 A, pulse duration = 50/-ls,
dv/dt = 100 V//-Is,-di/dt = -10 AI/-IS, IGT = 100 mA,
VGT = 0 V (at turn-off), TC = 80C (See Fig. 13) ... to - 4 8 /-IS
Thermal Resistance, Junction-to-Case .. .. . . .. . . . . . ROJC - - 8 C/W
@ FORCED - AIR COOLED, 400 TO 1000 FEET I MINUTE
THYRISTOR WITH HEAT RADIATOR
THYRISTOR WITHOUT HEAT RADIATOR
?
~
ii5
,,0
".
j ~ 60
'"
,,::>
;<>-
0"
~~
"o.
"'" "
::>>-
;!
x
""
2
CURRENT [ITIAVil-A
CURRENT WAVEFORM. SINUSOIOAL

LOAO RESISTIVE OR INOUCTIVE
CONOUCTION ANGLE. (81)0
~ 10 _ ..
I
~
<5
~
2 3
AVERAGE ON-STATE CURRENT[IIT(AVIU-A
SUPPLY FREQUENCY" 60 Hz SINE WAVE

CASE TEMPERATURE PRIOR TO SURGE" 60 C
LOAO RESISTIVE
REPETITIVE PEAK REVERSE VOLTAGE (VRROMI' MAXIMUM RATEO VALUE
AVERAGE ON-STATE CURRENT OT(AV)]' MAXIMUM RATEO VALUE
PULSE HEIGHT. 10 A (PEAK)

PULSE WIOTH AS INOICATEO
VORXM' RATEO VALUE
WAVEFORM. SINUSOIOAL
THERMAL IMPEOANCE, JUNCTION-TO-
CASE. 5' C/W
I
8
\0 100
SURGE CURRENT OURATION - CYCLES
i
"', ~
~ ~
>-
~
z
~ 15 '"
~
~
~ ~
u
~
S ~
~ ~
w
or
~ w
>
w
'" or
~ 10
~
0 0.5 1.5 2 25
INSTANTANEOUS ON-STATE VOLTAGE ('T)-V
100 SHAOEO AREA INOICATES LOCUS

8
6
OF POSSIBLE TRIGGERING
FOR VARIOUS
POINTS
TEMPERATURES.
-
~ -
- PERMITTEO PULSE WIOTHS
FOR INOICATEO PEAK
FORWARO GATE POWER
4
11'<-
f".-
\ A
'" ,
2
> ,,/ V
I Ii l~s
'-? 10 = ~~~~~GMEGF~TREI~~:~~~~D
MAXIMUM GATE
RESISTANCE lO,u.s
~
~
8=
6-
JUNCTION TEMPERATURE
Ti'" 40C
(T;I
10011
e,\c,"\
~~"-
"' ,,-'l-~
~
>- --
"- I'.
1 ms <;"'~
'" 4_.
"- "-
>
+250 C ,,/
:;;;>
"-
/' ------ ~I I
./ ~~"i>
-~
'"
'"~
5 2
./
"-
V
~ .100 C AVERAGE GATE !
E 1.0 DISSIPATION LIMIT
0.5 WATT
--
8
6 MAXIMUM GATE TRIGGER

CURRENT FOR INOICATEO
4 JUNCTION TEMPERATURE IT;I
.100 0 c +250 C Tj" _400 C

/
2
MAXIMUM VOLTAGE AT WHICH
0.1 Tj. +1000 C
8 6 8
0.1 1.0
GATE-TO-CATHOOE CURRENT (IGT)-A
.; L
oj --- ------ --------
,
/--- ditd.
I
ITM---
'
r---------
'ox
-------- :----i-
VDX
L~~:OINT:::L- _ o
f-,-l ~VRX
I
VRXM
I
I
I
I
I
I
1- -----0
I
I
'n --~--- 19, ------l
I I
~l'l ------I
Fig. 13 - Rt-/ationship between off-state voltage, reverse voltage,

on-state current, and reverse current showing reference
points defining turn-off time (tq).
SUPPLY SUPPLY
VOLTAGE VOLTAGE
~II II~
* FOR ADD1TlONAL
ON GATE TRIGGER
INFORMATION
CIRCUITS, ET(.
REFER TO JEDEC STANDARD
NQ. 7 SECTION 6.204.2.
+ ISOV DC
SCR2
N, LI
C, C2 ---
N2 03
C.
N3 0, R,
R3
C3
SIX eo-wATT N. R2
C5
LAMPS CON-
NECTED IN
N5 02
PARALLEL D.
L2
N6
SCR1
Cl, C2: 0.011JF', 1200 V <Ballast Capacitors) R J' R2: 1.2 kQ, 5 watt
C3: 0.01 IJF', 600 V R3: 200 Q, 10 watt
C4, C5: 0.02 IJF', 600 V T: Core, 8 pieces of Indiana General No.
D l' D2: F'ast-Recovery Diodes, 6 A, 600 V CF'-602 Material 05, or equivalent.
D3, D4: lN574 Cross Section, 8 cm2
Ll, L2: 32IJH Nl' N6 - 30 Turns of No.1S Magnet Wire
L3: 131 Turns of No.15 Magnet Wire on N2, N5 - 13 Turns of No. IS Magnet Wire,
Arnold Engineering Core No.A4-04117, 2 Strands
or equivalent N3, N4 - 52 Turns of No.1S Magnet Wire,
2 Strands
f-15O V
DC
O2
RS
0,
R. R7
R.
R" R,.
R'2
0.
D.
l C
'
R,.
F?II
Ql: RCA-40438 R4, R12, R15 R17' R1S: 22 kQ, 1/4 watt
Q2' Q3' Q4: RCA-2N3053 R5 Rll: 10 kQ potentiometer
Cl, C2: 0.0031JF', 100 V R6: 10 kQ. 1/4 watt
C3 C4: 0.02 IJF'. 100 V R7: 1.5 kQ. 1/4 watt
C5: 25 IJF'. 25 V. electrolytic ij,S' R9' R13 R14, R16: 6S0 Q, 2 watts
DI, 2, 03: Transitron type TIC, or equivalent R19: 5.6 kQ, 1/4 watt
D4: Motorola type.1M20ZIO. or R20: 33 kQ. 1/4 watt
equi.va\ent R21 R22: 10 Q. 1/4 watt
Neon Lamp: CE type NE-83, or equivalent TI, T2: Sprague Pulse Transfo:'mer type
Rl R3: 1 kQ. 1/4 watt 42Z109. or equivalent
R2 RIO: ISO kQ. 1/4 watt
DIMENSIONAL OUTLINE FOR TYPES S3714A, B, C, D, M, and S
Q 2 SCREWS.
~NOT"'V""l"'8LEFRO"'l~'"
6-32
JEDEC TO-66 WITH HEAT RADIATOR
e
'. OF31A
MICA INSULATOR
e 00 0 M"",w,," "V,"
o
~ HEATStNK
leHASSISI
O2METAL
Ei>
0>
WASHERS
0
6
-::...
U"

495334-7
2 NYlON
1.0." 0.156
SHOULDER
0250 m.
SHOULDER
OOSO '".11.27
INSULATING
m. (4_00 mm)
16.40
CIA. =
mmj
BUSHINGS
THICKNESS
mml MAX.
2 LOCKWASHERS@
2HEX.NUTS@
2S0LDER LUG~
2HEX.NUTS@
-- TEMPERATURE
In the United Kingdom, Europe, Middle East, and Africa, mounting -I ~51~s,.UREMENT
hardware policies may differ; check the availability of all items <-
-2 MOUNTING
TABS
(NOTE 3)
92CS-133B3R4
DIMENSIONAL OUTLINE FOR TYPES S3704A, B, D, M and S

JEDEC TO-66
INCHES MILLIMETERS
A 0.620 - 15.75
'"
D
0.028
0.750
0.034
0.760
0.711
19.05
0.864
19.30
Dl 0.370 0.385 9.40 9.78
,
D, 0.820 0.920 20.83 23.37
.,
1.297 1.327 32.94 33.70
'1 0.546 0.566 13.87 14.37
0.190 0.210 4.83 5.33
0.30 0.55 7.62 13.97
0.175 0.210
"
L 0.270 -
'.44
6.86
5.33
-
N 0.052 0.065 1.32 1.65
N, 1. 1.102 27.89 27.99 1
N, 0.448 0.452 11.38 11.47
N3 0.099 0.113 0.25 0.29
N. 0.498 0.502 112.65 12.75
W 0.048 0.060 1.22 1.52
1 Me....red ~l OOllom 01 hNI r.clIIlOl

INCHES MilliMETERS 2 0035 In 10889) C R S.!In P.~led
SYMBOL MIN MAX. MIN MAX. NOTES 3 RKOmmended hole "'e 10< p<lnled-C"cull bo;Ird IS
0070 In. II 778l dl~
A 0.250 0.340 6.35 8.64
b 0.028 0.034 0.711 0.863
D
..,,
D,
-
0.470
0.190
0.093
0.620
0.500
0.210
0.107
-
11.94
4.83
2.36
15.75
12.70
5.33
2.72
,
0.050
-
0.075 1.27
-
1.91
,
"
L 0.360
0.050
- 9.14
1.27
-
F
, 0.142
0.958
0.152
0.962
3.61
24.33
3.86
24.43
. - 0.350 - 8.89
"" - 0.145 - 3.68
0.570 0.590 14.48 14.99
Pin No.1 - Gate

Pin No.2 - Main Terminal 1
Case/Heat Radiator - Main Terminal 2
OO(]5Lm Thyristors/Rectifiers
Solid State S3705M D2600EF
Division
S3706M D2601DF
D2601EF
These RCA devices are silicon controlled rectifiers and silicon
Irectifiers intended for use in horizontal-deflection circuits of
large-screen color-television receivers_A simplified schematic
SILICON
diagram for
rectifiers
the utilization of these SCR's and silicon
is shown below. For detailed information on the
CONTROLLED
operation of this new deflection circuit, seeApplication
AN-3780.
Note
RECTIFIER AND
The S3705M (40640)*
02601 EF (40642)*
silicon controlled-rectifier
silicon rectifier
and the
are the trace circuit SILICON
components. They provide bipolar switching action for
controlling the horizontal
tube beam-trace interval.
yoke current during the picture RECTIFIER
The S3706M (40641) * silicon controlled-rectifier
02601 OF (406431* silicon rectifier
and the
are the commutating
COMPLEMENT
02600EF
026010F
(retrace) circuit components. They control the yoke current
during the retrace interval.
For Horizontal 02601EF
The 02600EF (40644)*' silicon rectifier is used as a clamp in Deflection Circuits JEOEC
the trace circuit to protect the circuit components from
excessively high voltages which may result from possible of Large-Screen 00-26
arcing in the picture tube or high-voltage rectifier.

ColorTV Receivers
High picture-tube beam current capability: to 1.5mA

dc overage (max.)
Designed for off-the-line operation: B+ = 155 V
Can fully deflect picturetubes having deflection angles
Supply voltages: 108 to 129 Vac to 900, 1-7/16" neck diameters, and 25-kV ultor vol-
Outstanding performance and reliability tages (nom. value)
Trace Commulaling
Repetitive Peak Off-State Voltage SCR SCR

With gate open . 600
Repetitive Peak Reverse Voltage

With gate open .
On-State Current:
For case temperature of +600C and 60 Hz
Average DC at 1800 conduction angle. IT(AV)
RMS . 'T(RMS)
Peak Surge (Nan-Rep"titive)

On-State Current:
For one cycle of 60 Hz voltage.
Critica I Rate af Rise of On.State Current:

For VDX = V(BO)O rated value,
IGT = SOmA, O.I~s rise time .
Gate Power Dissipationo:

Peak (forward or reverse)
for 10 ~s duration
Temperature Rangeb:
Storage . -40 to +IS0
Operating (case) .. -40 to +100
a Any ,alues or peak gate current or peak gate voltage to give the maximum gale power are permissible.
b For information on the reference point of temperature measurement, see Dimensional Outline.
I
dV/dl---....,'
I
:----.l
I VRX
I
I
I
I
- ----~-------o
I
-
I
tgri
I
I
S3705M S3706M
Trace SCR Commutating SCR
Breakaver Valtage:
With gate open
At TC : + 100C . V(BO)O
At TC : +800C . V(BO)O
Peak Farward Off-State Current:

With gate open,
VOO: V(BO)O rated value
At TC : +lOOoC . 100M 0.5 1.5 mA
At TC : +800C ................ 100M 0.5 1.5 mA
Instantaneaus On-State Valtage:

For an on-state current of 30 A,
TC : +250C . vT 2.2 3 2.2 3 V

At TC : +250C . IGT 15 30 15 30 mA(dc)
DC Gate Trigger Valtage:

At TC : +250C . VGT 1.8 4 1.8 4 V(dc)
Therma I Resi stance:

J unction-to-Case . ROJC 4 4 C!W

(Reverse recovery time + gate
recovery time)
Trace SCR-
At ITM: 6 A (tr: 25 I'S, di/dt: 2.5 A!l's),
Vo : 0 V (prior to turn on),
VO: 400V (reapplied at 175V!l's),
VR : 0.8 V (min.),
IGT: 100mA,
VGK(bias): -30V (68 [) source),
f: 15.75 kHz,
TC : 70C .
Commutating SCR-
At ITM: 13 A (y, sine wave 71'S base,
initial di/dt : 20 A!l's to 3 A),
Vo : 350 V (prior to turn on),
dV!dt: 400V!l's (to 100 V),
VR: 0.8 V (min.)
IGT: 100mA(tp: 31'S, tr: 0.2I's),
VGK(bias): -2.5V (47 [) source
during turn off),
f: 15.75 kHz,
TC : 70C .
S3705M.S3706M,D2600EF,D2601DF, D2601EF File No.354
SILICON RECTIFIERS D2601EF D2601DF D2600EF

MAXIMUM RATINGS: Trace Commutating Clamp
Silicon Rectifiers
Non-Repetitive Peak Reverse Voltagec. VRM(nonrep) 700 800 700 V
Repetitive Peak Reverse Voltaged .. VRM(rep) 550 450 550 V
Forward Current: d
DC ......... IF 1 1 1 A
RMS ........ IF(RMS) 1.9 1.6 0.2 A
Peak Repetitive. IFM(rep) 6.5 6 0.3 A
Peak Surge e ... IFM(surge) 70 10 20 A
Ambient Temperature Range:

Operating. TA -40 to +150 ~ e
Storage ....... T stg -40 to +175 ~ e
Lead Temperature:
For 10 seconds maximum. ........... 255 e
CHARACTERISTICS:
Max. Instantaneous Forward Voltage Drop:

At IF = 4 A, T A !o 75C .... ....... vFM 1.3 1.3 2 V
Max. Reverse Current (Static): I

At Te = 100C. IRM 0.25 0.25 0.25 mA
At T A = 25C ...... IRM 10 10 10 ~A
Reverse Recovery Time:

At IF = 20mA, IR = ImA, Te = 25C. trr 1.1 1.1 1.6 max ~s
Turn-On Time:
At IF = 20 mA, Te = 25C .......... ton 0.3 0.3 0.3 max ~s
Peak Turn-On Voltage:

At IF = 20 mA, Te = 25C .......... 5 6 7 max V
C Pulse width = 10 J..LS, pulse repetition fate := 15.7 kHz,

3 pulses.
For ambient temperatures up to 45C and maximum thermal

resistance from reference point to ambient of 4SoC/W, with
devices operating in circuit of Fig.l.
Pulse width =3 ms.

At max. peak reverse voltage and zero forward current.
f
125 ISO
=l=
S3705M, S3706M D2600EF, D2601DF, D2601EF
JEOEC TO-66 JEOEC 00-26
l
.500
.470
r
340 (864)
250~
('~I:D)
1194 1 [(m) 075
1
t-~
360 (9 14l-=---- ~ nc " ~ n. n
lSEATING~
CATHODE
LEAD 1.4 (35.56)
DETAILS OF OUTLINE (NOTE I) MIN.
IN THIS ZONE OPTIONAL
i
.027-.036 DIA.
(69- 91)
POLARITY
r
SYMBOL
.962 (24.44) ~
(NOTE2)
.958 24.33 I
~ REFERENCE POINT
~j
FOR CASE TEMPER-
ATURE MEASUREMENT
(478) 1.4(35.56)
MIN.
2 MOUNTING HOLES ANODE
LEAD
.152 CIA (3.86)
.142 . 3.61 .027-.036 DIA,
1691-~9Il , ,.220-.260
2 PINS (5.59 -6 .. 60l
g~: OIA. (.~i) GLASS

DIA
INSULATION <>
+ 92CS-14457R3
Note 1: Connected to metal case.

Note 2: Arrow indicates direction of forward (easy) current flow
as indicated by de ammeter.
Pin 1: Gate When Incorporatmg ReA Solid State Devices In equipment, It is

Pin 2: Cathode recommended that the designer refer to "Operating Considerations for
Case: Anode ReA Solid State Devices", Form No.1 CE402, available on request
from RCA Solid State DIvIsIOn, Box 3200, Somerville, N.J. 08876.
OOCTI3LJ1]
Solid State
Division
5- Ampere Silicon
Controlled Rectifier
For Applications in Pulse Power Supplies
To Drive GaAs Laser Diodes
Features:
High peak-current capability
Good current-spreading attributes
Symmetrical gate-cathode construction for uniform current
density, rapid electrical conduction, and efficient
heat dissipation
Controlled minimum holding current
Hermetic construction
Type S3701 M- is a silicon controlled rectifier intended for pulses. Therefore, a functional test in a simulated pulser
use in circuits which generate pulses to drive injection laser circuit is used to control the S3701M for laser pulser appli-
diodes. A simplified circuit of a laser pulser is shown in Fig. cation.
1. Detailed information on circuits of this type is given in
RCA Application Note AN-4469, "Solid-State Pulse Power
The S3701 M SCR is designed for the good current-spreading
Supplies for RCA GaAs Injection Lasers."
and delay-time characteristics necessary to provide high-peak-
current pulses to drive the laser diode. An additional
The conventional SCR turn-on time, turn-off time, and significant characteristic of this device is its well controlled
on-state voltage do not correlate with circuit performance in holding current, which assures operation only at currents
a laser pulser operating with extremely short, high-current sufficiently high to meet the circuit requirements,
T
Formerly ReA type 40768.
CHARGING
MAXIMUM RATINGS,Absolute-Maximum Values:
Case temperature (T cl = 250C, unless otherwise specified * RESISTOOR_600V DC
SUPPLY
~
Gate open 600 V
roo,,"
VDROM
PULSE
RMS ON-STATE CURRENT (Conduction
angle = , 80) . .ITIRMS) A
REPETITIVE PEAK ON-STATE CURRENT
10.2 ~s Pulse Width): IpM
Free-air cooling, f = 500 Hz 75 A
= 5000 Hz
Free-air cooling, f
Infinite heat sink, f = 10,000 Hz.
40
40
A
A J
I nfinite heat sink, f = 1,000 Hz. 75 A
PEAK IFor 10 ~s pulse)
'* NON -INDUCTIVE RESISTOR
PGM 25 W
ADJUST RESISTANCE VALUE TO OBTAIN 020j.<s
TEMPERATURE RANGE: PULSE WIDTH AT 50 % CURRENT POINTS
Storage. Tstg -40 to 125C
Operating (Case) TC -40 to 100C
TERMINAL TEMPERATURE lOuring soldering): TT
For 10 s max. (terminals and case) 225 c
At Maximum Ratings and at Indicated Case Temperature (Tel Unless Otherwise Specified
LIMITS
CHARACTER ISTIC SYMBOL UNITS
Min. Max.
Gate open, vD = VDROM, TC = 25C. IDROM - 0.65 mA
TC = 75C. - 1.2
DC Gate-Trigger Current: TC = 25C IGT - 35 mA
DC Gate'frigger Voltage: TC = 25C VGT - 4 V
DC Holding Current:
Gate open, TC = 25C 15 -
IHO mA
Tr = 75C 10 -
Critical Rate-of-Rise of Off-State Voltage:
For vD = VDROM, exponential voltage rise, gate open, TC = 75C dv/dt 200 - V/!J.s
Source Voltage for Functional Test (See Fig. 2):
Ip = 75A, C = O.022!J.F, Rs = 2n, f = 60Hz, pulse duration = 0.21J.S,TC = 25C Vs - 550 V
Thermal Resistance:
Junction-to-Case ROJC - 7
C/W
Junction-to-Ambient. ROJA - 40
0-550 v
VARIABLE
DC
SUPPLY
INCHES MILLIMETERS
SYMBOL MIN. MAX MIN. MAX. NOTES
A 0.250 0.340 6.35 8.64

'.,h 0.028 0.034 0.711 0.863
D 0.620 15.75
D, 0,470 0.500 11.94 12.70
e 0.190 0.210 4.83 5.33
e, 0.093 0.107 2.36 2.72
Pin 1 - Gate 0.075
Pin 2 - Cathode
F
F,
0.050
0.050
1.27 1.91
1.27 ,
2
L 0.360 9.14
Mounting Flange, Case - Anode
"p 0.142 0.152 3.61 3.86
q 0.958 0.962 24,33 24.43
'1 0.350 8.89
'2 0.145 3.68
, 0.570 0.590 14.48 14.99
NOTES:
1. The outline contour is optional within zone defined by <p 0 and F,.
2. Dimension does not include seating flanges.
[KlCTI3LJ1] Thyristors/Rectifiers
Solid State 537025F 021015
Division 537035F 021035
021035F
Horizontial- Def lection

SeR's and Rectifiers
I For 1100 Large-Screen Color TV
Ij
.JJ. Features:
Operation from supply voltages between 150 and 270 V (nominal).
R "*

Ability
Ability
to handle
to supply
high beam current;
as much as 7 mJ of stored
average 1.6 mA de.
energy to the de-
flection yoke, which is sufficient for 29 mm-neck picture tubes,
as well as 36.5 mm-neck tubes, both operated at 25 kV (nominal
021015 value).
021035
02103SF Highly reliable circuit which can also be used as a low-voltage
power supply.
These ReA types are designed for use in a horizontal output The silicon rectifier 02101S (40892)* may be used as a
circuit such as that shown in Fig. 1. clamp to protect the circuit components from excessively
high transient voltages which may be generated as a result of
The silicon controlled rectifier S3703SF (408881* and the
arcing in the picture tube or in a high-voltage rectifier tube.
silicon rectifier 02103SF (40890) * are designed to act as a
bipolar switch that controls horizontal yoke current during
the beam trace interval. To initiate trace-retrace switching To facilitate direct connection across each silicon controlled
and control yoke current during retrace, the silicon controlled rectifier, S3702SF and S3703SF, the anode connections of
rectifier S3702SF (40889)* and the silicon rectifier 02103S silicon rectifiers 021035 and 021035F are reversed as
(40891) * act as the commutating switch. compared to that of a normal power-supply rectifier diode.
HIGH-VOLTAGE
TRANSFORMER
r---i
I
COM MUTATING
SWITCH
1--- --,
I
For a description of the operation of SeA deflection systems see ReA Application Note AN-3780,
A New Horizontal Deflection System Using S3705M and S3706M Silicon Controlled Rectifiers";
ST3871; "An SeA Horizontal-Sawtooth-Current and High-Voltage Generator for Magnetically
Deflected Picture Tubes"; ST-3835, "Switching-Device Requirements for a New Horizontal-Deflection
System"
MAXIMUM RATINGS, Absolure-Maximum Values:
COMMUTATING SCR
SILICON CONTROLLEO RECTIFIERS S3702SF
Non-Repetitive Peak Off-5tate Voltage:

Gate open .............................................. 750' V
Repetitive Peak Off-State Voltage:
Gate open .............................................
T C ~ BOoC ........................................ 700 V
Repetitive Peak Reverse Voltage:
Gate open ............................................. 25 V
On-State Current:
T C = 60De, 50 Hz sine wave, conduction angle = 180:
Average DC ....................................... IT(AV) 3.2 A
RMS ......................................... IT(RMSI 5 A
Peak Surge (Non-Repetitive):
For one cycle of applied voltage, 50 Hz . 50 A
Critical Rate of Rise of On-State Current:
For VD ~ VDROM rated value, IGT 50 mA, 0.1 JlS rise time .......= 200 A/JlS
Gate Power Dissipatione:
Peak (forward or reverse) for 10 /ls duration, max. reverse
gate bias ~ -35 V ....................................... 25 w
Temperature Rangell:
Storage .......................................... --40 to 150 c
Operating (easel . --40 to BO c
Protection against transients above this value must be provided. Transients generated by arcing may persist for as long as 10 cycles.
-Any product of gate current and gate voltage which results in a gate power less than the maximum is permitted.
-remperature measurement point is shown on the DIMENSIONAL OUTLINE.
ELECTRICAL CHARACTERISTICS, At Maximum Ratings and at Indicated Case Temperature IT CI

SILICON CONTROLLED RECTIFIERS
LIMITS
CHARACTERISTIC SYMBOL S3703SF S3702SF UNITS
TYP. MAX. TYP. MAX.
Peak Forward Off-State Current:

Gate open, VDO = Rated VDROM 100M
TC = 85C . ..... .... . . .. . . . . . . . . . . . 0.5 1.5 0.5 1.5 mA

iT = 20 A TC = 25C . ... ... .. ... ...... . .. vT 2.2 J 2.2 J V

TC = 25C ....... ... .... .... ......... IGT 15 40 15 45 mA

TC = 25C ..... ... ............ .. ................. VGT 1.8 4 1.8 4 V
Critical Rate-of Rise of Off-State Voltage:

TC = 70C ..... ........ .... . .......... . .... dv/dt 700 (MIN.~ 700 (MIN.)'" V/jJ.s
Circuit-Commutated Turn-Qff Timet:

TC = 70C, Minimum negative bias
during turn-off time = -20 V (S3703SFI
and -2.5 V (S3702SFI
Rate of Reapplied Voltage (dv/dt) = 175 Vips .. ..... .... tq - 2.4 - - jJ.s
Rate of Reapplied Voltage (dv/dtl = 400 Vips .. , .. .... - - - 4,2 jJ.s
Thermal Resistance:
Junction-to-Case . ....... ..................... .... .. R8JC - 4 - 4 C/W
Up to 500 V max. See Fig. 3.

This parameter, the sum of reverse recovery time and gate recovery time, is measured from the zero crossing of current to the start of the
reapplied voltage. Knowledge of the current, the reapplied voltage, and the case temperature is necessary when measuring tq. In the
'NOrst conditions (high line, zero-beam, off-frequency, minimum auxiliary load, etc.) , turn-off time must not fall below the given values.
Turn-off time increases with temperature; therefore, case temperature must not exceed 70o e. See Figs. 2 & 3.
CLAMP
D2101S
REVERSE VOLTAGE"":
Non-repetitive peak" . 700 V
Repetitive peak ..................................... 800 V
FORWARD CURRENT:
RMS .................................
Peak-surge(non-repetitive)" .
3--
70 70
3-- 30
1" A
A
Peak (repetitive) ........................................ 7 12 0.5 A
TEMPERATURE RANGE:
Storage ......................................... Tstg c
Operating (Case) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TC c
LEAD TEMPERATURE :
F(ji;O s maximum. . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL c
*. For ambient temperatures up to 4SoC.

- For a maximum of 3 pulses, 10 J.ls in duration, during any 64 J.ls period.
- Maximum current rating applies only if the rectifier is properly mounted to maintain junction temperature below 150C. See Fig. 4 .
.. At distances no closer to rectifier body than points A and B on outline drawing.
SILICON RECTIFIERS
MAXIMUM LIMITS
CHARACTERISTIC SYMBOL D"103S D2101S UNITS

D2103SF
Reverse Current:
Static
For VRRM = max. rated value. IF = 0, T C = 25C ......... JRM 10 - J1A
For VR - 500 V, T C = 100C ...................... 250 -
Instantaneous Forward Voltage Drop:
At IF = 4 A. T A = 75C ............................... vF 1.4 1.5 V
ReverseRecovery Time:
'FM = 3.14 A.}\ sinewave, -<li/dt = -10 A/J1s, trr 0.5 0.7 J1S
pulse duration = 0.94 J1S, T C = 25C ................ .....
/1--r l I 6A
J/J
I
:~n----
r---25~s----i ~2.4~s
I I II
~ r-1q
"I,I
j..IO~S~t- : :~~P~.j~D
I I, I dv/dt
175V/~s
REAPPLIED
+t!' I
I
I 400V/~s
I I IREAPPLIED
dv/dt I I
II'
lacv __
: I: ',I't
L I,
I __ 500V
MAX.
II
II MAX. I
II
I
The SCA's and rectifiers can be operated at full current only
if they have adequate heat sinking. The procedure illustrated
in Fig. 4 should be used when mounting the SCA's. A single
aluminum plate made as shown in Fig. 5 will provide
adequate heat sinking for trace and commutating rectifiers.
Lip punching of the chassis at one end of the clamp plate,
1.125
makes it possible to mount the rectifier using only one screw.
S3702SF and S3703SF fit socket PTS-4 (United International
I
_.----('28,58)'----,j
Dynamics Corp., 2029 Taft St., Hollywood, Fla.), or

equivalent.
.".,,"~ J.
Qs--- 2 SCREWS,
NOT .VAIL.
632
ILEH.OMRC
~r
_-.1
0.312
(7.92)
ur
o
DF31A
~5~~;,------J
MICA INSULATOR
. SVPPLlEOWITHOEVICl
o
0
0 ~cEHAAT~:~r
02 METAL
6

WASHERS
Q
e
::...
~

4953347
2 NYLON
SHOULDER
CIA.
IN.5ULATING
1.0.0.156 In. {4.00 mml
SHOULDER
0.250 In. (6.40 mml
THICKNESS
0.050 Ifl. (1.27 mm) MAX.
K
BUSHINGS
2 LOCK WASHERS @
2 HEX, NUTS @>
2S0LDER LUG~
2HEX.NUTS@
Fig.5-Suggested clamp plate and mounting arrangement for

rectifiers D2103S and D2103SF.

Fig.4-Suggested hardware and mounting arrangement for

sews S3702SF and S3703SF.
DIMENSIONAL OUTLINE (JEDEC TO-66)
S3702SF,S3703SF
INCHES MilLIMETERS
SEATING
SYMBOL
A
MIN.
0.250
MAX.
0.340
MIN.
6.35
MAX.
~~
8."
~AHE 0_ 0.028 0.034 0.111 0.863
00 - O.62Q - 15.75
00, 0.470 0.500 11.94 12.70
, 0.190 0.210 4.83 5.33
", 0.093 0.101

0.Q75
2.36 2.72
0.050
-
1.27
-
1.91
,
2
"
L 0.360
0.050
- 9.1.
1.27
-
4p 0.142 0.152 3.61 3."
q 0.'" 0.962 24.33 24.43
- 0.350" - 8.89
"
'2 - 0.145 - 3."
0.570 0.590 14.48 14.99
Pin 1 - Gate
Pin 2 - Cathode
DIMENSIONAL OUTLINE (JEDEC DO-1)

D2101S, D2103S, D2103SF
POINT A
INCHES MilLIMETERS
LEAD NO. I SYMBOL NOTES
MIN. MAX. MIN. MAX.
+b b 0.027 0.035 0.69 0.89 2
bl 0.125 3.18 1
D 0.360 0.400 9.14 10.16
Dl 0.245 0.280 6.22 7.11
D2 0.200 5.08
F 0.075 1.91
POLARITY SYMBOL INDICATES DIRECTION Gl 0.725 18.42

OF FORWARD (EASY) CURRENT FLOW. K 0.220 0.260 5.59 6.60
THIS POLARITY IS OPPOSITE TO ReA
1 1.000 1.625 25.40 41.28
POWER SUPPLY RECTIFIERS.
0 0.025 0.64
H 0.5 12.7
NOTES:
1. Dimension to allow for pinch or seal deformation
anywhere along tubulation (optional).
2. Diameter to be controlled from free end of lead to
within 0.188 inch (4.78 mm) from the point of
attachment to the body. Within the 0.188 inch
(4.78 mm) dimension, the diameter may vary to
allow for lead finishes and irregularities.
[Jl(]5LJ[) Thyristors/ Rectifiers
Solid State
Division
Power Integrated Circuits for Color and

Monochrome TV Horizontal Deflection
Application Features:
Operation from supply voltages between 150 and 270 V (nominal)
Ability to handle high beam current (average 1.6 mA de)
Ability to supply as much as 7 mJ of stored energy to the deflection
yoke, which is sufficient for 29-mm-neck picture tubes and 35-mm-neck
picture tubes operated at 25 kV (nominal value)
Highly reliable circuit that can also be used as a low-voltage
power suppiy
The 53800 series are. all-diffused power integrated circuits to control horizontal yoke current during the beam trace
that incorporate a silicon controlled rectifier and a silicon interval; 538005 (41020)", 53800M (41021)", 53800EF
rectifier on a common pellet. 538005F (41017)", 53800MF (41022)", and 53800D (41023)" are used as commutating
(41018)", and 53800E (41019)" are used as bipolar switches switches to initiate trace-retrace switching.
HIGH-VOLTAGE
TRANSFORMER
r-----,
I
TO
PICTURE
TUBE
For a description of the operation of SeR deflection systems, see ReA Application Note AN-3780,
"A New Horizontal Deflection System Using S3705M and S3706M Silicon Controlled Rectifiers";
ST-3871, "An seR Horizontal-Sawtooth-Current and High-Voltage Generator for Magnetically
Deflected Picture Tubes"; ST-3835, "Switching-Device Requirements for a New Horizontal-
Deflection System",
53800 Series File No, 639
... ... ...w

MAXIMUM RATINGS, Absolute-Maximum Values: ~ :; w :; c
0 8 0
0 ~ 0
0
0
0 8
!:l III !:l III !:l III !:l
en en en en en en en
Non-Repetitive Peak Off-5tate Voltage:
Gate open VDSOM 800' 700' 550' 750' 650' 600' 500' V
Repetitive Peak Off5tate Voltage:

Gate open VDROM
T C = 80C 750 650 500 700 600 550 400 V

Gate open VRROM 0 0 0 0 0 0 0 V
On-State Current:
TC = 6Qoe, 50 Hz sine wave, conduction angle '= 180:
Average DC ITIAV) 3.2 3.2 3.2 3.2 3.2 3.2 3.2 A
RMS ITIRMS) 5 5 5 5 5 5 5 A

For one cycle of applied voltage, 50 Hz ITSM 50 50 50 50 50 50 50 A
Critical Rate of Rise of onState Current:

For V = VOROM rated value, IGT = 50 mA. 0.1 1J.Srise time
o di/dt 200 200 200 200 200 200 200 A/~s
Gate Power Dissipation:
Peak (forward or reverse) for 10,us duration; max. reverse gate
bias = -35 V for S3800SF, MF, E; -8 V for S3800S, M, EF, D PGM 25 25 25 25 25 25 25 W
Temperature Range-:
Storage Tstg -40 to 150 c
Operating (case) . TC -40 to 80 c
Protection against transients above this value must be provided. Transients generated by arcing may persist for as long as 10 cycles.
-Temperature measurement point is shown on the DIMENSIONAL OUTLINE.
ELECTRICAL CHARACTERISTICS, At Maximum Ratings and at Indicated Case Temperature (T c!

LIMITS
S38005 F, S3800M F S3800S, S3800M,
S3800E S3800EF, S38000
TYP. MAX. TYP. MAX.

Gate open, VDO = Rated VDROM IDOM
TC =850C 0.5 1.5 0.5 1.5 mA
I nstantaneous On-State Voltage: TC = 25C

SCR, IT = 30 A VT 2.2 3 2.2 3
V
Rectifier, IF = 3 A VF - 1.6 ~ 1.6

TC = 25C IGT 15 40 15 45 mA
TC = 25C VGT 1.8 4 1.8 4 V
Critical Rate of Rise of Off-State Voltage'
TC = 70C dv/dt 8501MIN.I 850IMIN.) V/~s
Circuit.Commutated Turn-Off Time t:
TC = 70C
Minimum negative bias during turn-off time = -20 V,
rate of reapplied voltage (dv/dt) = 175 V/JIs . - 2.4 ~ -
'q ~s
Minimum negative bias during turn-off time = ~2.5 V,
rate of reapplied voltage (dv/dtl = 400 V/JIs , ~ - - 4.2
Thermal Resistance:
Junction-to-Case R - 4 - 4 C/W
OJC
t This parameter, the sum of reverse recovery time and gate recovery time, is measured from the zero crossing of current to the start of the
worst conditions (high line, zero-beam, off-frequency, minimum auxiliary load, etc.), turn-off time must not fall below the given values.
Turn-off time increases with temperature; therefore, case temperature must not exceed 700C.
[~ .. !:.~T
:,.. .,
,I
:
j
:
i
"
"
-r
I
600v
Q
~
2 SCREWS. 6-32
NOT VA'lAaUFROMRCA
if!7=
0
OFJ1A
MICA INSULATOR
. SUPl'LIEDw,lHOEV'CE
o 0
o
0 ~E::,1:~"
0 2 METAL
e
e
Q
WASHERS
6

495334.7
2 NYLON
SHOULDER
INSULATING
I.O."0.156on.14.0011'l11'l1
0.250 ,n, 1640mml

SHOULDER
OIA.
THICKNESS
0.050 In 11.27 mil'll MAX.
BUSHINGS
'"
...
2 LOCK WASHERS@
2HEX.NUTS@
2SOLDEALUG~
2HEX.NUTS@
} ~,
fROMRCA
,,,,,,

SEATING
~A"E
REFERENCE
POINT FOR
CASE TEMPERA
TURE MEASURE
MENT
INCHES MILLIMETERS
SYMBOL MIN MAX. MIN MAX NOTES
A 0.250 0.340 6.35 8.64

0.028
Ob
00 -
0.034
0.620 ~
0.711 0.863
15.75
O, 0.470 0.500 11.94 12.70
, 0.190 0.210 4.83 5.33
'I
, 0.093
0.050
0.107
0.075
2.36
1,27
2,72
1.91 2
- - 1.27
L " 0.360
0.050
- 9.14 -
1
Op 0.142 0.152 3.61 3.86

q 0.958 0.962 24.33 24.43
- 0,350 - 8.89
",
'2 - 0.145 - 3.68
0.570 0.590 14.48 14.99
Pin 1 . Gate
Pin 2 . Cathode
Mounting F lange, Case - Anode
RCA 2N3668*, 2:":3669*, 2;\3670*, and 2N4103* are
all-diffused, three-junction, silicon controlled-rectifiers
(SCR'sA). They are intended for use in power-control and
power-switching applications requiring a blocking voltage
capability
plies,
of up to 600 volts and a forward-current
bility of 12.5 amperes
value) at a case temperature
The 2N3668 is designed
supplies,
the 2N3669 for direct
(rms value) or 8 amperes
of 800C.
for low-voltage
operation
the 2N3670 for direct
power sup-
from 120-volt
operation
line
from 240-volt
capa-
(average
pJ
ReA t
line supplies, and the 2N4103 for high-voltage power

supplies .
Formerly Dev. Typcs TA2621, TA2598, TA2618, and

TA2775, respectively .
. The silicon controlJed-rectifier is also known as a re-
verse-blocking triode thyristor. For Low-Voltage
2N3668 Power
Supplies
For 120-Volt
2N3669 Line
Operation
For 240- Volt

2N3670 Line
Operation
For High-Voltage
2N4103 Power
Suppl ies
All-diffused construction -assures exceptional uni

formity ond stobility af characteristics
Direct-soldered internal construction - assures ex-

ceptional resistance to fatigue
Symmetrical gate.cathode construction - provides uni-

form current density, rapid electrical conduction, and
efficient heat dissipation
Absolute.Maximum Ratings, for Operation with Sinusoidal AC Supply Voltage
at a Frequency between 50 and 400 Hz, and with Resistive or Inductive Load
RATINGS CONTROLLEDRECTIFIER TYPES UNITS
2N3668 2N3669 2N3670 2N4103

Tlansient Peak Reverse Voltage
(Non-Repetitive), vRM(non-,epj3 . ..... .... 150 330 660 700 volls
Peak Reverse Voltage (Repetitive), vRM(rep)q. . . . . . . . . . . ... 100 100 400 600 volts
Peak forw31d Blockmg Voltage
(Repelibvel, vFBOM(rep)C. ....... .,. . . . . . . . . . . . 600 600 600 700 volls
Forward Current:
For case tempelature (T C) of +800 C
Average DC valueata conduction angle of 1800, IFAY<!. ...... 8 8 8 8 amperes
RMSvalue, IFRMSe. 11.5 11.5 11.5 11.5 amperes
For other conditions, see Fig. 8
Peak Surge Current, iFM(surgd:
For one cycle of applied voltage ................ ..... 100 100 100 100 amperes
For more than one cycle of applied voltage. ......... ...... See Fig. 10 See Fig. 10 See Fig. 10 See Fig. 10
SubCycle Surge (NonRepelllive), 111&
For a period of lms to 8.3ms . . . . . . . . . . . . . . . . . . . . . . . 165 165 165 165 ampere2
second
Rate of Change of Forward Current, di 'dth. .... ..... ... 100 100 100 100 amperes
YFB ~ vBOO(mtn. valuel microsecond
IGT ~ 100mA, 0.5 J.' S rise lime
(See waveshapes of Fig. 1)
Gate Power:
Peak, Forward Of Reverse, for lO,us duration, PGMi .
. . . . . . . .. 4U 40 40 40 watts
(See Figs. 5 and EI
AVeiage, PGAyk. . . . . . . . . . . . . . . . . . . . . . ... 0.5 0.5 0.5 0.5 watt
Terr.perature:
Storage, Tstge. ......... ... . . . . . . . . . ... ... .. .. , .. -4010 >115 -4010.115 4010.115 -4010 >115 C
Opelaling (Case), TC. -4010.100 -4010100 -4010.100 -4010 >100 C
1--------- _
CRITICAL d,/dl ~
/
0-
*"0.63 VfB
f" RC
CHARACTERISTICS CONTROLLED.RECTIFIER TYPES UNITS
2N3668 2N3669 2N3670 2N4103
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
Forward Breakover Voltage, "800m

1.tTC' .IOOOC ..................... 100 - - 200 - - 400 - - 600 - - volts
Peak Blocking Cunent, at T C :: 100C:
Forwafd, IFBDM" . - 0.1 1 - 0.15 1.5 - 0.3 3 - 0.35 4 m1.
VFBOP 'BOO(m". value)
Reverse, (RBOM'. - 0.05 1 - 0.1 1.15 - 0.1 1.5 - 0.3 3 m1.
VRBOP = vRM(lep) value
Forward Voltage OIOP,VFr
At a Forward Current of 25 amperes and
aTe' .150e (See Fig. 11).. . . . . . . . . . . . . - 1.5 1.8 - 1.5 1.8 - 1.5 1.8 - 1.5 1.8 volts
DC Gale- Trigger Current, IGTs:

1.tTe' .150e(SeeF,g.5l. ....... 1 10 40 1 10 40 1 10 40 1 10 40 m1.(de)
GaleTngge, Voltage, VG{
At Te' .150e (See Fig. 5l. . ........... - 1.5 1 - l.5 1 - 1.5 1 - 1.5 1 volts (de)
Holding Current, IHOOu:
At Te' .150e. 0.5 15 50 0.5 15 50 0.5 15 50 0.5 15 50 m1.
Critical Rate of Applied Forward Voltage,
Critical dv dlv. 10 100 - 10 100 - 10 100 - 10 100 - volts!
VFS:: vBoo(mm.value), exponential rise, microsecond
Te' dOOOe
(See waveshape of Fig. 2)
Turn-On Time, lonw, (Delay Time + RIse Time) . 0.75 1.15 - 0.75 1.15 - 0.75 1.15 - 0.75 1.15 - microseconds
VFB = vBOO(mln. value), IF = 8 amperes,
IGT'" 200mA, 0.1 uS Ilse lIme,
Te 0 .150e
tSee waveshapes of Fig. 3)
TurnOff TIme, toffl, (Revelse Recovery TIme
+Gate Recovery Time). - 10 50 - 10 50 - 10 50 - 10 50 microseconds
IF'" 8amperes, 50" s pulse width,
d'FBdl' 10, "s,
d', dt 30 A .. s, IGT 100m1.,
I
Te'800e I
I See waveshapesof FIg. 4)
Thermal ReSistance, Junction-to-Case. - - 171 - - 17 - - 17 - - 17 0e 'W
dVrs/dt ~/
I (
I
dir Idt \ I vRB
~\
I
I
____ :-----i
\ I I
I I
iF I I
_:l __ 1 I
-+------ ------0
I
, I
I
I I
tqr ----+1
I'
I I I
k----- t off ------.;
,
The construction of the gate-cathode junction
used in these devices pro, ides a large peripherv
center gate. These devices also employ shorted-
emitter construction which removes restrictions on
both forward and re,erse peak I(ate voltal(e and peak
gate current. Limiting \'alues of \'olt-ampere products
for different gate pulse ,,"idths are sholln in Fig. 5.
These limits should be adhered to IIhen designing
pulse trigger circuits for maximum trigger pulse widths
and peak pOller dissipation. The ,olt-ampere products
in the re,"erse direction sholln in Fig. 6" should be
u!?cd to determine limitations for reverse gate tran-
sients or rc\'crse gale pulses if present. In all cases,

total a\'era~e ~ale diss\?ation, both forward and re-
\"crse, should not exceed the average gate dissipation
rating (PG.-\ \") of 0.5 lIatt.
Turn-on times for different gate currents are shown
in Fig. 7. These curves ma)' be used to determine the
3
required widlh of the gale trigger _pulses. It is onlv "'z
0
necessary to maintain the gate trigger pulse until the 0
magnitude of the forward anode current has reached ~

0
the latching current value. Ho\\ever, conservative

52
design requires that the gate trigger pulse width be '"I
at least equal to or somewhat greater than the device '"
'"
>=
turn-on time. Some applications may require wider Z I
0
gate pulse widths for proper circuit operation. I
Z
'"::>...
.--D o L,-..J180
CQKlUCTION
ANGLE
~
:::. .- .... ::::
2 3 4 5 6 7 B 9 10 II 12 13 14
AVERAGE FORWARD CURRENT {IFAVl-AMPERES
92CM-I3808
.~...
..~-
SUPPLY FREQUENCY,,60 H7 SINE WAVE CASE TEMPERATURE (T )=25 C
... -~- ...C_-- ---'-' --

.......-t.:
I~
CASE TEMPERATURE"aOo
lOAD:RESISTIVE
c
FEE= - 2: --- -- -- --- tc:"
~::::- -, , .
.. --
~. ':::!1
REPETITIVE PEAK REVERSE VOLTAGE ~RM(reP~:MAXIMUM-RATEO VALUE
100
, , , -._. 'j~ , -- 'r
. ..'-!=; -- ::-n
AVERAGE FORWARD CURRENT (IFAV):MAXIMUM-RATEO VALUE ..
-- . ...
, ..
.-
.. -r: ~~J
! Q
_ ... -- ,it ._. :-;.1 i.=
1 2001\.
'"
'"~
'" ~
fi'
V>
'"
80
.- ._ .. ...
..
..
.-- -.
.._
....
.
, : , : _ .. . _._. J
: : ..
_.-.
..
-
.
~f; -
3 '-'- =:ff
, ---- us:
1
>-V>
160 V>
:>
Q.
" 60
=]'1 :'" .. --
..
, f .. .. ..
..
"-0'
~--
" .
",,,,
z'" 0
'" I
z
..
:::: .- J .... : :-:::=
~ ltl20 i"- "- II .--
co"
u
",I
'" 80 -.........
z
>-
~~ 40 ..
..
'1
-- . +
'--
,
" ,.. :
=1
:-w
.. : :
:: ..
'"~
'"
........ "
~'"'":> 20
u
,. ::.:
.. --

: ..
l:'
40
"
;;
Y / .. .--
q"'-'
---.. .. .. :'2
-- --..
" V ./ I,E :
0
, , , -- -- ... --- 3~ :-::1"1
2 4 6 2 4 6 2 4 6
NATURAL COOLING FORCEDAIR COOLING'

SINGLE - PHASE OPERATION AIR VELOCITY" 1000 FEET PER MINUTE PARALLEL TO
CONDUCTION ANGLE. 1800 * PLANE Of HEAT SINK
CONTROlLED -RECTIFIER USING HEAT-SINK COMPOUND SINGLE - PHASE OPERATION
HEAT SlNKl 1/16~!.. THICK COPPER WITH A MAT - BLACK
SURFACE AND THERMAL EMISSIVITY OF 0.9 ~:~~~~ltiD ~~T~;I~~O~S'NGHEAT-SINK COMPOUND*
HEAT SINK' 1/16" - THICK COPPER WITH A MAT-BLACK
SURFACE AND THERMAL EMISSIVITY OF 0.9
~
"I
~
1 ~
...
I
>-
z
ll!
1
...
'5
u
>-
Q
a: ~
a:
i3
~
"- IE
'"'"

ei !
il
"
co
g
'"
il
"~
" ";;
:>
"

"
~
w--- 2 SCREWS 632
NOT"'V"'ILA~LEFAOMRC'"
t~it
:~~----~ :~~'"W,
.450
.250
1-
.312 MIN.
I
L.
SEATING
135 "AX .
PLANE
O 6
2 METAL
0
WASHERS
~

~:~~:~'~NSULAT1NG
e
~~S~l~.~~
SHQULDERDIA.-O.2SOm,
1640
SHOULDER
mm) MAX.,
0.050 In,
Sl.PI'llEOWlTH
in. (4.00 mml
THICKNESS
11.21 mm) MAX.
DEVle"
, LO::~::HUE::~ } NOT AIIA'LA,6lE FRO'" ReA
2S0LDEA LUGS~
2HEX.NUTS@
In the United Kingdom. Europe. Middle East, and Afnca, mounting-

hardware policies may differ; check the availability of all items NOTE: THESE DIMENSIONS SHOULD BE MEAS-
shown with your ReA sales representative or supplier. URED AT POINTS .050 TO .055 BELOW SEATING
PLANE. WHEN GAUGE IS NOT USED, MEASURE-
MENT WILL BE MADE AT SEATING PLANE.
o-1NIPINIP
<5
f-DJ
CATHODE
TERMINAL
ANODE
TERMINAL
(CASEl
I
GATE
TERMINAL
PIN 1: GATE
PIN 2: CATHODE
CASE: ANODE
Solid State 5620056210 56220
Division
5eries
20-Ampere Silicon
Controlled Rectifiers
PRESSFIT For Low-Voltage Operation - 56200A (40749)*, 56210A (40753)*,

S6200 56220A (40757)*
Series For 120-V Line Operation - 56200B (40750)*, 56210B (40754)*,
CATHODE 56220B (40758)*
\ ....-GATE STUD
For 240-V Line Operation - 562000 (40751)*,562100 (40755)*,
S6210
Series 562200 (40759)*
For High-Voltage Operation - 56200M (40752)*, 56210M (40756)*,
56220M (40760)*
ISOLATEDSTUD
S6220
Series
These RCA types are alldiffused, silicon controlled rectifiers Features:

Low switching losses Symmetrical gate-cathode
(reverseblocking triode thyristors) designed for power High di/dt and dv/dt capabilities construction-provides uniform
switching and voltage regulator applications and for heating, Shortedemitter gate-cathode current density. rapid electrical
construction conduction, and efficient heat
lighting and motor speedcontrol circuits, Forward and reverse gate dissipation dissipation
ratings Low leakage currents, both forward
These SCRs have an RMS on-state current rating (IT [RMS]) All-diffused construction-assures and reverse
exceptional uniformity and stability Low forward voltage drop at high
of 20 A and have voltage ratings (VDROM) of 100, 200, 400, of characteristics current levels
and 600 volts, Low thermal resistance
56200A 56200B 56200D 56200M

MAXIMUM RATINGS, Absolulc-,\Iaximum \'olups: 56210A 56210B 56210D 56210M
~O~-RF:PF:TITI\'F: PEAK Rr:\'r:RSE \"()LT,\(;E 56220A 56220B 56220D 56220M
Gatt Open ................................ \'RSO\I 100 200 400 600 V
~O"-Rr:PETITI\'E PEAK FORWARD\,Ol-T,\(;r:
(; 1t' Opt'n ..............................
\'IJSml 150 250 500 700 V
RI,:PETITln: I'r:AK REn:RSE VOI-TAC;,:
t;att' ()Pt>" ............. \'RRml 100 310 400 600 V
RU'ETITI\'E Pr;AK OFF-ST,\TE \"OI.T,\(;I,;
{:i1I(' ()pt'n ...........
\'IJRO\l Ino 200 400 tilll) V
I'I;AK Sl'R(;r; I~O~'REI'ETITI\'EI O~-STATE ("('RRE~T:
For ont' ('yc-lt, of lIpp!Il'rl pnncipal VOltilJW
IT""
50-II z. sinusoidal . 170 A
tW-1I /.. sinusoidal ......................... 200 A
For mort.' than ont' full (".\It.'lt, of ilppll('d prinCipal \-oltagl' ... , See Fig. 10
0N-STATF. CURRENT:
For l'a~l' ll'mpNutuTl' (TC) = 75 C. conductiun an~l(' of I~)n
A\l'nl~f' DC \"alul' . . . . .. ...... , . ,.
11'(,\\"1 12.5 A
R\1S \""JUl' , ,., 20------ A
1'f(R\ISI
RATE-IW-C'!IANC;EOF ON'STATE CURRENT:
\ 0\1 = v( B010,IGT = 200 mA, tr n.!) p.s (S('l' Fi,i{. 2.) ..... dtidt 200 A/P.8
(;ATE POWER DISSIP/\TION:
PEAK f'!)RWARD <ror 10 p.;-. nUlx.l , , .... , . , PGM 40 W
AVERA(;E (a\'erll~ln~
PEAK REVER'-;E . , ...
tlm<' - 10 ms,
, . , . . . .
milx.) ,
. , , ..
, .
, ...
C
P (I\V) 0,5
Set' FiR. 5
w
I'J{(;M
TEMPERA1TRE IL\NI;F::
Stora~(' , , , . , , , . , , , , , -05 Lo \50 C
()p<'ratlnR (Cast') ... , , , ... -65 to 100 C
Soldl'nnR (10 s max. for tenninalsl , .... " . ' 225 c
11-73
At Maximum Ratings and at Indicated Case Temperature (T C) Unless Otherwise Specified
LIMITS - ALL TYPES
Min. Typ. Max.
Inslantaneous Forward Breakover Voltage'

IGate open. T C = 100 oc)
56200A, 5621 OA, 56220A . ... .. .. .. 100 -
56200B, 5621 OB, 562208 . .. .... 200 - -

562000,562100,562200 .. ... vI Bo)O 400 - - V
56200M, 56210M, 56220M ..... .... ... 600 - -
Peak offState Current
IGate open, T C = 100 C'
Forward, VOO = VOROM . .. .. .. .. 100M - 0.2 3
mA
Reverse. VRo = VRROM ... . , ... . ... ..... IRROM - a I 2
Instantaneous On'Stale Voltage'
For 'T=IOOA. TC=250C .......... .................. ... vT - 1.9 2.4 V
DC Gate Trrgger Current
Vo = 12V IOC). RL =30n. T C = 25C .. .... ..... . .... . ... - 8 15 mA
IGT
At oilIer case temperatures . .......... .... ..... ... . .... .. See Fig. II
DC Gale Trrgger Voltage'
Vo = 12VIOCI. RL =30\;. TC = 25C ........ .. . ....... I l.l I 2
V
At other case temperatures. ....... .... . ...... VGT See Fig. 12
Instantaneous Holding Curren!" !
Gate open. T C = 25 C ... ....... ... .. - . ... ..... .... 'Ho I 9 I 20 mA
At other case temperatures . . ..... .... See Fig. 15
Crrtical RateofRise of OrtState Voltage:
(VOO = VIBO)O Min. value, Exponential rise, TC 100C, See Fig 5)
dv dl V;;.s
56200A, 562000, 56210A, 562100, 56220A, 562200 .. ..... 10 100 -
56200B, 562108, 562208 10 ISO -
56200M, 56210M, 56220M ........... 10 75 -
Gate Controlled TurnOn Trme:
tgt
Vo = VIBO)O Min. value, iT ~ 30A, IGT -200mA, 0.1 "s rise time, TC 250C - 2 - liS
See Fig. 9
CirCUit Commulated TurnOff Time'
Vo = VFIBOlO Min. value, iT = 18A, Pulse ouralion 50 "s,
tq - 20 40 liS
dv/dt = 20 V II'S, di/dt = -30 All'S, T C = 75C
See Fig. 4
Thermdl ReSistance:
Junction-la-Case ... ..... ........ ...................... ROJC - - 1.2
0C 'W
.
JunctlOntolsolated Stud . . . . . . . . . ........ .... .......... ROJtS - - 1.4
J-----------------
~
,
/..--di/dl
I I
I"~
VRSO"'~ ~VRROM
0--- _ ~L~M I_~ _
~ r--'I
~.O.63+
t Rt
; 'T. }';j',
VSO"T.-\! ,
I
--111,I 'ox
I SO" IRM
1
__ I
--j r-'"
f--t-- '. ---j ~_'_DX _
~'T I :(', ,
I \t-
1 I 'I
Fig. 4-Relationship between on-state current, reverse current, on-

state VOltage, and off-state voltage showing reference points
for definition of turn~ff time (tg).
l5
;Qe~ ;Q~
CONDUCTION
CONDUCTION ANGLE
ANGlE
-
30
~,DC OPERATION
90
.
....
~
g
,
2S
t~-
~ r"
~ ~,
(().IDUCTIQN ANGLE '" 1800
z
0 ._- j~~
t
~ 85
30'
20
~ .:/~ ~. ..~
w
'+'1 '2\)<>'
'~j ; I
~
;:: -'IY- . ~
.
~
is
w
~
0
-t t-
90'
~l:
':1
/: .. _ ..
....
.. .. o ~
~
w
~
80
""
..~ "" w
.. " ~
W
....
rl-.~: ., ..
. ... ....
-< -
... ,:i
~--<
I' .... . . ~ ~ ~
.
w
~ "'" -.:t.:..; :-r:: -~-~ -:r '"~
~
4 ~
"~ ., ii:: -;n

t
I
w
~ i ,'" ~
~
75
> 10
-:i-::- wi t ~
~
S
5
AVERAGE ONSTATE (URRENT IT(AV) -A '1'-'

7-Maximum allowable case temperature vs. average forward
current for stud and press-fit.
Q8if
CONDUCTION
ANGLE
..
u
~ 80
.. CASE TEMPERATURE"
LOAO :: RESISTIVE
60C
~
'" g REPETlTIVE PEAK REVERSE vOL TAGE [~RRO/l\] " MAXIMUM RATED VALUE
S'" 75 ....
%
400
AVERAGE ON-STATE CURRENT (IrIAV)) '" MAXIMUM RATED VALUE
'"'"u~
..
w
"... 300
~
~
w
'"
100~
J'H'
~
"'"~ 100 ",':: -....::::: ......
w
..
~
~ 0
-40 -20 0 20 40 60
CASE TEMPERATURE (TC )_C
9255-4465
Mounting of press- fit package types depends
upon an interference fit between the thyristor case and
the heat sink. As the thyri stor is forced into the heat-
sink hole, metal from the heat sink flows into the knurl
voids of the thyristor case. The resulting close contact
between the heat sink and the thyri stor case assures low
thermal and electrical resistances.
A recommended mounting method, shown in Fig. 15,

shows press-fit knurl and heat-sink hole dimensions.
If these dimensions are maintained, a "worst-case"
condition of 0.0085 in. (Q.21.~9 mm) interference fit will
allow press-fit insertion below the maximum allowable
insertion force of 800 pounds. A slight chamfer in the
heat-sink hole will help center and guide the press-fit
package properly into the heat sink. The insertion tool
should be a hollow shaft having an inner diameter of
0.380 0.010 in. (9.65 0.254 mm) and an outer diame-
ter of 0.500 in. 02.70 mm). These dimensions provide
sufficient clearance for the leads and assure that no
direct force is applied to the glass seal of the thyristor.
The press-fit package is not restricted to a single

mounting arrangement; direct soldering and the use of
epoxy adhesives have been successfully employed. The
press-fit case is tin-plated to facilitate direct soldering
UPPER LIMIT OF PERMISSIBLE to the heat sink. A f)0-40 solder should be used and
2 AVERAGE (OC) GATE POWER
DISSIPATION AT RATED heat should be applied only long enough to allow the
OJ CON ITIONS.
4 6 80.1 2 6 8 I 6 810 2
sold,'r to now freely.
POSITIVE GATE-lO-CATHODE TRIGGER CURRENT (lGT)-A
9255-4466
---'-- ~~g~~-:b)l OIA.

900 L8 MAX.
-~I-
-60 -40 -20 0 20 40 60
NOTE: Dimensions in parentheses are in
CASE TEMPERATURE ITCI-oC
millimeters and are derived from the basic
9255-4467
Fig. 15-DC holding current vs. case temperature. inch dimensions as indicated.
Package
Employed Resistance-OClW
Press-fitted into heat sink.

(Minimum Required thickness 0_5
of heat sink = liB in.
SOldered directly to heat sink_

Press-Fit (60-40 solder which has a melt-
used. Heatmg time should 0.1 to 0.35
be sufficient to cause solder
to flow freely).

with or without the use of heat 0.6
sink compound.

Stud
0.004 to 0.006 in. thick mica
insulating washer used be-
tween unit and heat sink.

hardware polIcies may differ; check the availability of all items
shown with your ReA sates representative or supplier.
REFERENCE
POINT FOR CA.SE
TEMPERATURE -
MEASUREMENT
INCHES MilLIMETERS INCHES MIlliMETERS

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX,
A - .380 - 965 A ,330 ,505 8,4 12,8 -
,,0 501 .510 12.73 12.95 ,,0, - .544 - 13,81 -
,,0, - .505 - 12.83 2 E 544 .562 13,82 14,28 -
,,0, .465 .475 11.81 12.07 F 113 ,200 2,87 5.08 3
J - .750 - 19.05 J - .950 - 24.13 -
M - .155 - 3.94 1 M - .15S - 3.94 1
"T .058 .068 1.47 1.73 N .422 ,453 10.72
1.47
11.50
1.73
-
lOT, .080 .090 2.03 2.29 "T ,058 .068 -
"T, .080 .090 2.03 2.29 -
NOTE 1: Contouf and angular orientation of these terminals is ,2225 .2268 5.652 5,760
",W 2
optional.
NOTE 2: Outer diameter of knurled surface. NOTE 1: Contou; and angular orientation of these terminals
is optional.
NOTE 2: f>itch diameter of \4-28 UNF-2A (coated) threads
(ASA Bl. 1-1960).
NOTE 3: A chamfer or undercut on one or both ends of hexagonal
portion is optional.
Terminal No. 1- Gate

Terminal No.2 - Cathode
Case, Tenninal No.3 - Anode
INCHES MILLIMETERS
SYMBOL NOTES
MIN. MAX. MIN. MAX.
A - .673 - 17.09
</>0 .604 .614 IS.34 15.59
</>01 .501 .505 12.72 12.82
E .551 .557 13.99 14.14
-l
REFERENCE!
POINT FOR CASE F .175 .185 4.44 4.69
TEMPERATURE
MEASUREMENT J - 1.055 - 26.79
M - .155 - 3.94
J .200 .210 5.08 5.33
Ml
SEATING PLANE
N .422 .452 10.72 11.48
mS-Ull
</>T .058 .068 1.47 1.73 2
</>Tl .080 .090 2.03 2.29 2
</>T2 .138 .148 3.50 3.75 2
NOTE 1: Ceramic between hex (stud) and terminal No.3 is </>W .2225 .2268 5.652 5.760 3
beryl I ium oxi de.
NOTE 2: Contour and angu lar orientation of these terminals
is optional.
NOTE 3: Pitch diameter of ',6-28 UNF-2A (coated) threads
(ASA Bl. 1-1960),
"WARNING: The 56220 series should be handled with care.

The ceramic portion of these thyristors contains BERYL
L1UM OXIDE as a major ingredient. Do not crush, grind, or
abrade these portions of the thyristors because the dust
resulting from such action may be hazardous if inhaled."
Terminal No. 1- Gate

Terminal No.2 - Cathode
Terminal No.3 - Anode
File No. 578
Thyristors
DDJ]3LJ[J 2N3870-2N3873,S6400N
Solid State
Division 2N3896-2N3899,S6410N
S6420A,B,D,M ,N
Press-Fit, Stud, and Isolated-Stud Packages

For Low-Voltage Operation-2N3870, 2N 3896, S6420A (40680) t
For 120-V Line Operation-2N3871, 2N3897, S64208 (40681)t
For 240-V Line Operation-2N3872, 2N3898, S6420D (40682) t
For High-Voltage Operation-2N3873, 2N3899, S6420M (40683)t,
S6400N (40937)t, S6401N (40938)t,S6420N (40952)t
Features:
2N3870 2N3896 S6420A High di/dt and dv/dt capabilities Center gate construction ... provides
2N3871 2N3891 56420B
2N3872 2N3898 564200 Low on-stat. voltage at high current levels rapid uniform gatecurrent spreading for
2N3873 2N3899 S6420M
S6420N Low thermal resistance faster turnon with substantially reduced
S64QON S641QN
Shorted-emitter gate-cathode construction heati ng effects
... contains an internally diffused
resistor between gate and cathode
These ReA types are all-diffused, silicon controlled rectifiers ing, power control, and voltage regulator applications
(reverse-blocking triode thyristors) designed for power switch for heating, lighting, and motor speedcontrol circuits.
2N3870 2N3871 2N3872 2N3873 S6400N

MAXIMUM RATINGS, Absolute-Maximum Values: 2N3896 2N3897 2N3898 2N3899 S6410N
S6420A S6420B S6420D S6420M S6420N
'NON-REPETITIVE PEAK REVERSE VOLTAGE.
Gate Open. 150 330 660 700 900 V
NONREPETITIVE PEAK OFFSTATE VOLTAGE.
Gate Open 150 330 660 700 900 V
'REPETITIVE PEAK REVERSE VOLTAGE.
Gate Open . 100 200 400 600 800 V
'REPETITIVE PEAK OFFSTATE VOLTAGE.
Gate Open _ 100 200 400 600 800 V
ON-STATE CURRENT,
T C :: 6SoC, conduction angle '= 180":
RMS --------35------
Average 22------
For other conditions See Figs. 3 & 5
PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT,
60 Hz (sinusoidal) 350
50 Hz (sinusoidal) 300
For more than one full cycle of applied principal voltage See Fig. 5
RATE OF CHANGE OF ON-STATE CURRENT
VD: VOROM' IGT = 200 mA,', = 0_5~s (See Fi9_ 13)
FUSING CURRENT (for SeR protection):
TJ = -to
to 100C, t = 1 to 8.3 ms
GATE POWER DISSIPATION,
Peak Forward (for 10 ~s max., See Fig. 8) 40
Peak Reverse . See Fig. 9
Average (averagingtime = 10 ms max.l ........... 0.5------
'TEMPERATURE RANGE",
Storage ............. ------- -40 to 125 -----
Operating (Case) .............................. -------- ----- -40 to 100 -------
TERMINAL TEMPERATURE (During sotdering): TT
For 10 s max. herminals and casel -------- 225
* In accordance with JEDEC registration data filed for the JEDEC (2N-series) types.
& These values do not apply if there is a positive gate signal. Gate must be open or negatively biased.
=
T C 600 for isolated-stud package types.
Any product of gate current and gate voltage which results in a gate power less than the maximum is permitted.
Temperature measurement point is shown on the DIMENSIONAL OUTLINE.
At Maximum Ratings Unless Otherwise Specified and at Indicated Case Temperature (T C)
LIMITS
FOR ALL TYPES

MIN. TYP. MAX.

(Gate open, T C = 100C)
Forward Current (IDOM) at VD = VDROM IDOM
Reverse Current (IROM) at VR = VRROM
or
2N3870, 2N3896, S6420A .. . . . .. - 0.2 2*
2N3871, 2N3897, S6420B . .. IROM - 0.25 2.5* mA
2N3872, 2N3898, S6420D . . .... - 0.3 3*
2N3873, 2N3899, S6420M,
S6400N, S6410N,S6420N ..... . .. - 0.35 4*

iT = 69 A (peak), TC = 25C . . . vT - - 1.85* V
iT = 100 A (peak), T C = 25C .. . - 1.7 2.1

VD = 12 V (de). RL = 30 n, TC = -40C VGT - 1.5 3* V
VD = 12 V (de). RL = 30 n, TC = 25C - 1.1 2
For other case temperatures ....... .. .. .. See Fig. 11

VD = 12 V (de), RL = 30 n, TC = 40C - 46 80*
VD = 12 V (de). RL =30n, TC = 25C IGT 1 25 40 mA
For other case temperatures ...... . ...... See Fig. 10

Gate open,
TC = 25C .......... . . . . . . iHO 0.5 30 70 mA
For other case temperatures . . . . .. See Fig. 7
Gate Controlled Turn-On Time:

For VD = VDROM' IGT = 200 mA, tr = 0.1 {..Is, tgt {..Is
IT = 30 A (peak), TC = 25C (See Fig. 12 & 14.) - 1.25 2
Circuit Commutated Turn-Off Time:

VD = VDROM' iT = 18 A, pulse duration
= 50 {..Is,dvldt = 20 V l{..Is, -di/dt tq {..Is
= -30 A/{..Is, IGT = 200 mA, TC = 80C
(See Fig. 15.) .............. .. .... - 20 40
Critical Rate of Rise of Off-State Voltage:

VD= VDROM, exponential voltage rise, dv/dt V/{..Is
Gate open, T C = 100C (See Fig. 16.) 10 100 -
Thermal Resistance, Junetion-to-Case:
Steady-State
Press-fit & stud types .... . . ROJC - - 0.9* CIW
Isolated-stud types .. .... . . - - 1
, I
.,
"RSO ---J "",,-VRROM
LOAD: RESISTIVE
RMS ON-STATE CURRENT [ITI RMS)]: 35 A
AT SPECIFIED CASE TEMPERATURE
.uc GATE CONTROL MAY BE LOST

we
~I
>-- FOLLOWING SURGE CURRENT
;::1 60 .
",'
INTERVAL.
w II) 300
. >-
I
"-
OVERLOAD MAY NOT BE
wH REPEATED UNTIL JUNCTION
"'-
'>-
Zz ,-"'- TEMPERATURE
TO STEAOY-
HAS RETURNED
STATE
50C r--...'
~~200 RATED VALUE
-'"
w"
"'u
~~ '00
~
"'1'c
><'"
e'
WZ
. 0
5 to 15 20 25 ~ 35
AVERAGE OR RMS ON-STATE CURRENT [I:TIAV) OR ITIAMSI] -A
92CM-200U
Fig.3-Maximum allowable case temperature

vs. on-state current for press-fit and
stud types.
.....
""o...." .
=
TWA O
,
;. :t;..; ,.~
..........
;:M~~~;;;:::~.:~~~~~;=
Iffi ,:' iill:;"- [;;. ""hi ~~::::n~::;::. ':C-,: iL; 1i~
g ..... i!; ..... :: "~:P.'!.~f OJ: ...............
100 #':0:::'.....:~:;~:
.....D ,1 ;+
....
-
.. ' Ol..---.-l"."
,;:; .... ~.
CONOU':T1QN
~ .u::;-~ ....
~ 90 ~
.. :":r.ir.:: ...
,r.::'
e ~=._ '.:;
.,
~
:::
..........
~\::;::::::
~:
L!:
::
[P,t:g~
.:::':::
.
~ 10 ::' __~ ~~~
~ :~~~~:~~
".
: ;,;
""-'
::::, .
~=-: '.:::.:
..
~=.":.-:~ :1: ~..

.:~~
.... ::.
.
~~:::: \~ ..
.
"
"::'
.
~~;::.-..~ ~~1'i j~::'~""";;;:~:ii:

... .. ,?![
o 5 10 15 20 2S JO )5
AVERAGE OR RMS ON-STATE CURRENT [ITtAVI OR ITIRMSl] -A
91CSIJ)f,IR2
PERMITTED P~LSf ~ID~H5
FOR INDICATED PEAK
Fig.5 -Maximum allowable case temperature FORWARD cue POwER
VS. on-state current for isolated-stud
types.
n6 0-4 02
REVERSE GATE CURRENT IlGTRI-A
92CS-I3360R3
Fig.10-DC gate trigger current (forward) vs.

case tempera ture.
Fig.12-Gate-controlled turn-on time vs. gate

trigger curren t.
'ot' fd .. "
I
I I
VD: :
oJ----- _ o_LL :_L-_
I-rl:
I I I
I I I
I I I
T : ! ......90% POINT
In. I I I
o_LL-- I-l---
!-- '. -i.--l.-- t,
I I I
r--- '.t --i
I
f~:-
VGT I
__ 10"- POINT
o-L - ------- 92CS-13366R2

-
Fig.14-Relationship between off-state voltage,
on-state current, and gate trigger voltage showing
reference points for definition of turn-on time (tgt)
Fig.15-Relationship berween instantaneous
on-state current and voltage showing
reference points for definition of
ci rcuit commutated turn-off time
Irq)'
Mounting of press-fit package types depends upon an center and guide the pressfit package properly into the heat
interference fit between the thyristor case and the heat sink. sink. The insertion tool should be a hollow shaft having an
As the thyristor is forced into the heat-sink hole, metal from inner diameter of 0.380 0.010 in. (9.65 0.254 mm) and
the heat sink flows into the knurl voids of the thyristor case. an outer diameter of 0.500 in. (12.70 mm). These dimen
The resulting close contact between the heat sink and the sions provide sufficient clearance for the leads and assure
thyristor case assures low thermal and electrical resistances. that no direct force will be applied to the glass seal of the
A recommended mounting method, shown in Fig. 17, thyristor.
shows press-fit knurl and heatsink hole dimensions. If these The press-fit package is not restricted to a single mounting
dimensions are maintained, a "worst-case" condition of arrangement; direct soldering and the use of epoxy adhesives
0.0085 in. (0.2159 mm) interference fit will allow press-fit
have been successfully employed. The press-fit case is tin-
insertion below the maximum allowable insertion force of plated to facilitate direct soldering to the heat sink. A 60-40
800 pounds. A slight chamfer in the heat-sink hole will help
solder should be used and heat should be applied only long
enough to allow the solder to flow freely.
TYPE OF MOUNTING THERMAL

PACKAGE
EMPLOYED RESISTANCE-oCIW
Press-fitted into heat sink.

IMinimum required thickness 0.5
of heat sink = 1/8 in_ (3.17 mm)

(60-40 solder which has a melt
In the United Kingdom, Europe. Middle East, and Africa, mounting-
Press-Fit ing point of 188C should be 0.1 to 0.35
used. Heating time should be shown with your ReA satesrepresentative or supplier.
sufficient to cause solder to
flow freely).

Stud with or without the useof heat- 0.6
sink compound.
2N3870,2N3871,2N3872,2N3873,S6400N 2N3896,2N3897,2N3898,2N3899,S6410N
PRESS-FIT STUD
REFERENCE
POINT FOR CASE
TEMPERATURE
MEASUREMENT
INCHES MilLIMETERS INCHES MilLIMETERS

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
- A 0.330 8.4 12.8

A 0_380 - 9.65 0.505
</>0 0.501 0.510 12.73 12.95 </>1 - 0.544 - 13.81
</>1 - 0.505 - 12.83 2 E 0.544 0.562 13.82 14.28
</>2 0.465 0.475 11.81 12.07 F 0.113 0.200 2.87 5.08 3
J - 0.750 - 19.05 J - 0.950 - 24.13
M - 0.155 - 3.94 1 M - 0.155 - 3.94 1
</>T 0.058 0.068 1.47 1.73 N 0.422 0.453 10.72 11.50
</>T1 0.080 0.090 2.03 2.29 </>T 0.058 0.068 1.47 1.73
</>T1 0.080 0.090 2.03 2.29
</>W 1/4-28 Ur~F-2A 1/4-28 UNF-2A 2
NOTES:
1. Countour and angular orientation of these terminals is optional.
NOTES:
2. Outer diameter of knurled surface.
2.<PWis pitch diameter of coated threads, Ref: ASA 81.1-1960.
DIMENSIONAL OUTLINE FOR TYPES Recommended torque: 50 inch-pounds.
3. A chamfer or undercut on one or both ends of hexagonal portion
S6420A, B, D, M, N
is optional.
ISOLATED-STUD
TERMINAL
NO.3
opT
INCHES MilliMETERS
SYMBOL NOTES
MIN. MAX. MIN. MAX.
REFERENCE
POINTFOR CASE
I A - 0.673 - 17.09
J
TEMPERATURE </>0 0.604 0.614 15.34 15.59
MEASUREMENT
</>1 0.501 0.505 12.72 12.82
E 0.551 0.557 13.99 14.14
J
F 0.175 0.185 4.44 4.69 3
SEATING PLANE
J - 1.055 - 26.79
M - 0.155 - 3.94 1
NOTES:
Ml 0.200 0.210 5.08 5.33 1
1. Contour and angular orientation of these terminals is optional. 11.48
N 0.422 0.452 10.72
2. W is pitch diameter of coated threads. Ref: ASA 8,.11960. 1.47
</>T 0.058 0.068 1.73
Recommended torque: 50 inch-pounds.
</>Tl 0.080 0.090 2.03 2.29
</>T2 0.138 0.148 3.50 3.75
is optional.
</>W 1/4-28 UNF2A 1/428 UNF2A 2
4. Isolating material (ceramic) between hex (stud) and terminal
No.3 is beryllium oxide.
WARNING: The ceramic of the isolatedstud package

TERMINAL CONNECTIONS FOR All TYPES contains beryllium oxide. Do not crush, grind, or
NO.1 - Gate abrade this part because the dust resulting from such
No.2 - Cathode action may be hazardous if inhaled. Disposal should
be by burial.
Case, No.3 - Anode
OOm3LJD Thyristors
Solid State 2N681-
Division
2N690
RCA-2N681 through 2N690 con- Symmetrical gate-cathode construction - provides

trolled-rectifiers are all-diffused, uniform current density, rapid electrical con-
duction, and efficient heat dissipation
three-junction, silicon devices for use
in power-control and power-switching Direct-soldered internal construction
applications requiring blocking-volt- exceptional resistance to fatigue
age capabilities to 600 volts and Each unit aged at maximum ratings to assure
forward-current capability of 16 am- dependable performance
peres (average value) or 25 amperes
All-welded construction and hermetic sealing
(rms value).
Shorted emitter gate-cathode construction
Low leakage currents, both forward and reverse
Low forward voltage drop at high current levels

All-diffused construction - assures exceptional
un iformi ty and stabi Iity af characteristiCs Low thermal resistance
Mul ti-diffusion process - permits precise control Exceptionally high stud-torquecapabil ity through
of individual junction parameters use of high-strength copper-alloy stud
CONTROLLEDRECTIFIER TYPES
UNITS
2N681 2N682 2N683 2N684 2N685 2N686 2N687 2N688 2N689 2N690
Transient Peak Reverse Voltage
(Non-Repetitive), vRM (non-rep}O . 35 75 150 225 300 350 400 500 600 720 volts
Peak Reverse Voltage
(Repetitive), vRM (rep)b . 25 50 100 150 200 250 300 400 500 600 volts
Peak Forward Blocking Voltage
<Repetitive), vFBOM (rep)C
Forward Current:
. .. 600 .. volts
For case temperature (TC> of +650 C,

and a conduction angle of 180, IFAVd. .. 16 .... amp
RMS value, lFRMSe
For other case temperatures and
.
25 amp
conduction angles .
See Fig.2 ..
Peak Surge Current, iFM (surge)f:
For one cycle of applied voltage . of 150 .. amp
For more than one cycle
of applied voltage . .. See Fig.3 ..
Peak Gate Power, PGM9 ........... .. 5 .. watts
Average Forward Gate Power, PGAVh . of 0.5 .. watt
Peak Forward Gate Current, iGKMi . .. 2 .. amp
Peak Gate Voltage:
..
Forward, vGKMk
Reverse, vKGMk ...
Temperature:
. of
of
10
5 .. volts
volts
..
..
Storage, T stg . -65 to +150 c
Operating,
Free Air, TFA
Case#, TC .
. of
-65 to +125
See FigA
.. c
Electrical and Thermal Characteristics at Maximum Electrical Ratings
(unless otherwise specified), and at Indicated Case Temperature, TC'
CONTROLLED-RECTIFIER TYPES
2N681 2N682 2N683 2N684 2N68S 2N686 2N687 2N688 2N689 2N690 UNITS
Minimum Forward Breakover Voltage,
vBOOm:
At TC = +1250 C . 400 500 600 volts
Maximum Average <DC) Forward
Blocking Current, IFBOAY":
At TC = +1250 C ............... 6.5 4 3 2.5 ma
Maximum Average (DC) Reverse
Blocking Current, IRBOAY P:
At T C = +1250 C 6.5 4 3 2.5 ma
Maximum Average Forward
Yoltage Drop, YFAyq:
At a Forward Current of 25
amperes and a TC = +650 C . -.~_----_~~_--- .. volt
Maximum DC Gate-Trigger Current,IGTr:
At TC = +1250 C . -
-.. -_... .. ma
DC Gate-Trigger Voltage, YGTs:
Maximum at TC = -650 to +1250 C -
~_------------ .. volts
Minimum at TC = +1250 C -
~_--------_~~ .. volt
Holding Current, iHOO t:
Typical at TC = +1250 C . .. ma
Maximum Thermal Resistance.
Junction-to-Case,6J_Cu ...... 2 . C/watt
# Measured at the center of any of the six major faces on the perimeter of the hexagonal flange.
DIMENSIONAL OUTLINE
JEDEC TO-48
o-1NlplNlpf-o
CATHODE
(LONG
(I)
l GATE
~.'C15"f","'
ANODE
TERMINAL
(STUD)
Note 1: Complete threads to extend to within 2-1/2

threads of head. Dio. of unthreoded portion 0.249"
maximum, 0.220" minimum.
Note 2: Angular orien'tation of these terminals IS un-
defined. Square or radius on end of terminal is optional.
Note 3, 1/4-28 UNF-2A. Mox;mum p;tch d;a. of plated
threads sholl be basic pitch dia. 0.2268 ", minimum
pitch dia. 0.2225 ". Ref. (Screw Thread Standards for
In the UnIted Kingdom, Europe, Middle East, and Africa, mounting-
Federol Serv;ces 1957) Hondbook H28 1957 P l.
hardware policies may diHer; check the a\lailabi.lity ot all items
Note 4: A chamfer (or undercut) on one or both ends of shown with your ReA sales representatl\le or supplier.
Suggested Mounting Arrangement for Insulating Types

2N681 - 2N690 from Heat Sink.
Goo-
" W'I
CATHODE
l~~~'
CONDUCTION
ANGLE
T--
I
I
YF~OM{rep)
5 10 15 20
AVERAGE FORWARD CURRENT (I F)-AMPERES
Fig.2 'JZCS-II'JZ8R3
SUPPLY FREQUENCY" 60 CPS SINE WAVE

CASE TEMPERATURE (TCl .650 C SINGLE-PHASE OPERATION.
[~'lllllllrN!A~T1U~R!AL~C!00!Li' !NG~.~~~~~~
LOAD" RESISTIVE
:~~~~~TJV~O=~~~OR~~~~~i?i;:~f . ~l~Dt"_~~~~A~~~D
VALUE
15 gg~~~8[~~ND~~~kfl~I~O; STUD
MOUNTED DIRECTLY ON HEAT SINK.
150 HEAT SINK: 1/16" THICK COPPER WITH
A MAT-BLACK SURFACE AND
~ ~~ ~.s'4: '1 THERMAL EMISSIVITY OF 0.9
125 ;OW --l'S" :j- '<:
-
I;;~
~ ........
~~ 10 4J
~~
a~
K>O
I-- :d>
<l
'X"
l!i I 75 '"
W <l
~
"'~
i1:e-
~!j
~~~ ~~
~~
5
d X'"
<l='
25 ~u
I 2 4
2 4

o 100 200 300 400 500 600

INSTANTANEOUS APPLIED FORWARD OR
REVERSE BLOCKING VOLTAGE (YFBO OR vRBOl-VOLTS
92CS-1l91~R2
[]\lcn3LJ1]
Solid State
Division
Silicon Controlled Rectifier

for High-Current Pulse Applications
Features:
Direct Soldered Internal Construction - Assures Exceptional Resistanceto

Fatigue
The S6431M (formerly RCA type 40216) is an all-diffused, It is especially constructed for rapid spread of forward cur-
three-junction silicon controlled rectifier (SCR) designed rent over the full junction area to achieve a high rate of
especially for use in radar pulse modulators, inverters, change of forward current (dildt) capability and low switch-
switching regulators, and other applications requiring a large ing dissipation.
ratio of peak to averagecurrent.
RATINGS CONTROLLED.RECTIFIER TYPE UNITS
S6431M
Transient Peak Reverse Voltage (Non-Repetitive), vRM

(non-rep)O . 720 volts
Peak Reverse Voltage (Repetitive), vRM (rep)b .... 600 volts
Peak Forward Blocking Voltage (Repetitive), vFBOM
(rep)C ............... 600 volts
Forward Current:
For case temperature of +650C, RMS value, IFRMSd ..... 35 amperes
Peak Pulse Current (See Fig.7> .................... 900 amperes
Rate of Change of Forward Current, di/dt" ..... See Fig.7
Dynamic Dissipation:
For case temperature of +650 C ................... 30 watts
For othe~ case temperatures ..................... See Fig.4
Gate Power: I
Peak, Forward or Reverse, for 10 I-lS duration, FGM ,
(See Figs.lO and 111 ............. 40 watts
Average, POAV9 ............................ 0.5 watt 1~
Temperature:
Storage, T s~ -65 to +150 c
Operating ( ase), TC' ..... --65 to +125 c
CRITICAL d,/dt ~
/-
/ ""
T
0-
j i--------- t ------j
63%
1
OF VFB
*=0.63 V~B
t: RC
Characteristics at Maximum Ratings (unless otherwise specifiecl),
ancl at Inclicatecl Case Temperature (T C)
Min. Typ. Max.
Forward Breakover Voltage. VBOOh

At T C = + 1250 C 600 - - volts
Instantaneous Blocking Current,
At TC =
+1250 C .
Forward. iFBo' .... - - 10 mA
Reverse, iRBOk . - - 10 mA
Forward Voltage DroP. vFm ...... See Fig.5
DC Gate-Trigger Current. IGT":
At TC =
+250 C(See Fig.lOl .. 1 25 80 mA(dcl
DC Gate-Trigger Voltage. VGTP:
At TC = +250 C (See Fig.lOl . - 1.1 2 volts(dcl
Holding Current. iHOOq:
=
At TC +250 C .... 0.5 20 70 mA
Critical Rate of Applied Forward Voltage, Critical
dv/dt' .............. 20 50 - volts I
microsecond
VFB = vBOa (min. value), exponential rise, and
TC =
+1250 C
(See wave shape of Fig.])
Turn-On Time, tonS, (Delay Time + Rise Time) . - microsecond
VFB =
vBOO (min. value). iF 30 A. IGT 200 mA.= =
O.llls min. rise time. and TC = +250 C
(See waveshapes of Fig.2l
Turn-Off Time, tofft t (Reverse Recovery Time + Gate
Recovery Time) .
iF = 18 A. 50 IlS pulse width. dVFB/dt = 20 VIlls.
di,jdt =
30 A/lls. IGT 200 mA. and TC =+800 C =
(See wave shapes of Fig.3)
Thermal Resistance, Junction-to-Cas .
I
dVF8/dt~1
I NOTE: FORWARD AND REVERSE LOSSES INCLUDED.

'40
......
'20 ;;::::
...... .....
;-' 100
I .....
dir Idt \ I VAB
I ....;::
----:~
w
~\ '5 SO
.....
\ I
, I r--.
I I ~ 60
I I ~
I I w 40
-+------ V>
I I 3
I 20
t 9' ----..j
I
o 4 8 12 16 20 24 28 32
tOff~
MAXIMUM DYNAMIC POWER DISSIPATION-WATTS (AVERAGE)
I
92LS-1893
TC : 65C
GATE PULSE: 500 mA
TIMES INDICATED ARE MEASURED FROM
BEGINNING OF CURRENT PULSE.
TIn II
'"'" 1000 I~JLI-b~,~,,~ .
~'"4,I~~~~ f1.~'"
"'?~
'"'"-"
",?'
'".I 800
,,~'v'
"'. 'l-~'
... II \~~'Jo
0-
z 600
1/
'"'"
'"
G
0 400
1.1 .:+-
~'" V I!
'~" ~ II
200
~ 0.5~
III' 20 30
III
FORWARD VOLTAGE (vF)-VOLTS
Fig. 5-Forward voltage-current characteristics as a function of time.
22
71.51'5
I
2,s
20
l,s
18
1 2.5 s
1 I
::: 16
I II I
~ I 1000
TC:650C
~ 14
1 J 113uS
900
"
~ I / / 800
::i / 3.5,s
C
12 !Ii 700
"
=
I J I /
i
600
~
~ 10
I / / / 1/ 4,s
500
" I J /
~ I
~
'" 400
~ 8-
/ / I 5,s '"x
~ 300
0.51'5
I 77 J / /io,s
II I I 7 ITJ -J
200
#~Ous
100
6
II
II, 'I V.I '#
I
/ I '/, f0 0.1
r
4 /..1.
j 11/ 'U
M
NOTE: TIMES INDICATED ARE MEASUREO
2 FROM BEGINNING OF CURRENT
PULSE.
92LM-lItO
Fig. 6-lnstantaneous forward dissipation-forward current character-
istics as a function of time.
400C
8'
7\
,s BlASE llDTJ i
Ipeilk
~ 4000
JE.lI,J- 0
z '.V SEl
fALL 2 liS
" 10k
II '\1
r
1 ~300
I
~ \'
"-
t:3 3000
'\11
1'\ 1\
\
BASE WIDTH
"
w
"-
::l
~
! 2000
~
RISE --Ll- ... FALLI-
BAS,E,WIDTH.
~ '\
~ B~SE .116;,
~
16" BASE'MOTH "
~
~ 2000
z t'-,...- ~
_RISE2 s Il
~
~
-
0
;:: ;:: I I
;::
tALLt"
~
~
~ 1000 NOTE: FOR 30 WATTHVER-
"' ..... I'-- ~ 1000
NOTE: ........
AGE FORWARO OISSIPATION r- FOR 30 WATTS AVERAGE FOR- ......
AT Tc .6S"C (REVERSE f- WARO OISSIPATION AT TC ' 6S' C
OISSIPATION NOT INCLUOEO BArT' (REVERSE OISSIPATION NOT INCLUOEO)
AVERAGE GATE
~IS,SIP.U~~ UMIT
I I 11
I I II
.25C
-
-
_ JUNCTION
,TTEMr~~~~URE,
ITJI
MAXIMUM VOLTAGE AT WHICH III TJ'-65'CI I111I 1 "I
TJ:+ 125 0 C
4
II
6

8
0.1
2
1I11111111
4 6 8 _,-
1.0
2
File No. 247
REVERSE
v- ,""THR'Ao
S6431 M
cv---- o
DF6B
MICA INSULATOR
AV"'LABUATPVOL'SHED
HMmWAREPR1CS
MAXIMUM .. j 40
GATE
:RESISTANCE;
., _. - - .~~: I
0.6 0,4 0.2 0

REVERSE GATE CURRENT - AMPERES
92C5-13360
Fig. 11-Reverse gate characteristics.

DIMENSIONAL OUTLINE
JEDEC TO-48
INCHES MILLIMETERS
SYMBOL NOTES
MIN. MAX MIN. MAX.
A O.3Xl
-
05<)5 .A- 12.8 -
-
,
00,
0.5014
0544
0.562 13 82
13.81
14.28 -
F 0.113 0200 287 5.08 3
-
J
M
0.950
0215
1.100
0225
24.13
".
27.94
5.71 ,
N 0422 0153 1072 11.50 -
oT 0058 0068 , 47 1.13 -
RUER(NCE
POINT FOR CASE
T, 0.138 0148 351 3_15 -
Y.-28 U!\lF2A Y.-28 UNF-2A 2
. -1, TE",r-(R/lfURE
MEllSUR(~(NT
OW
_..J"" SEATING PLANE NOTES

1 Contou, .nd '''II"r., 0"e,,18110" of ,hes.e le,m,"el,
Pilchd,emel.,ol ': 28 UNF 21\,(co.tedl 'h,uds(ASA 81. 1-1960f.
A chamle. 0. u"d".cul 0" 0". O. bo,h e"ds 01 he_agonel pon,on
isop,io"el.
No.1 - Gate
No.2 - Cathode
Stud, No.3 - Anode
Thyristors
OOC05LJD 2N1842A 2N1845A 2N1848A
Solid State 2N1843A 2N1846A 2N1849A
Division
2N1844A 2N1847A 2N1850A
RCA-2N1842A-2N1850A con t ro 11 ed-rec t i fi ers

are all-diffused, three-junction silicon
devices for use in power-control and power-
switching applications requiring blocking-
voltage capabilities to 500 volts and
All-Diffused Types for
forward-current capability of 10 amperes
(average value) or 16 amperes (rms value). Power-Control and
FEATURES- Power-Switching Applications
all-diffused construction-assures exceptional
uniformity and stabil ity of characteristics
multi-diffusion process-permits
of individual junction parameters
precise. control
1J
JEDEC TO-48
direct-soldered internal construction-assures
exceptional resistance to fatigue
.-hermetic seals
shorted emitter gate-cathode construction low leakage currents, both forward and reverse
each unit aged at maximum ratings to assure welded construction
dependable performance
low forward voltage drop at high current levels
symmetrical gate-cathode construction-provides
uniform current density, rapid electrical con- low thermal resistance
duction, and efficient heat dissipation
except ionall y high stud-torque capabi Iity through
designed to meet stringent military environ- use of high-strength copper-alloy stud
mental and mechanical specifications
exceptionally rugged terminals
CATHODE
" $" I.
l'l., -:- ,
,
:':-\IRM(non-r~1 ~F~M(repl
"\/RM(r.p)
Fig.l - Typical -1 Characteristic of Silicon

Contra lled-Rect ifier.
RATINGS SYMBOLS
.
REF. 2NISq2A 2NISq3A 2NISqqA
CONTROLLED-RECTIFIER TYPE
2NISq5A 2NISq6A 2NISq7A 2NISqSA 2NISq9A 2NIS50A
UNITS
TRANSIENT PEAK
REVERSE \GLTN:;E vAM
(NON- REPETI TI VE)
(non-rep) 1 35 75 150 225 300 350 400 500 600 volts
PEAK REVERSE \QLTAGE 2 25 50 150 200 250

( REPETITIVE) vRM (rep) 100 300 400 500 volts
PEAK FORWARD IL()(](ING vFIDM

\QLTAGE (REPETITIVE) ( rep)
3 600 volts
AVERN:;E FORWARDaJRRENT 1FAV 4

For a case temperaturdF
of +800 C and a con-
ducti on angl e 0 f 1800 10 , MJl
For other case tem-
peratures
duction
and con
angles See Fig. 2 .
PEAK SURGE QJRRENT: iFM(surge) 5
For
appli
one cycle
ed vol tage
of
125 . MJl
For more than one eyel e
of applied vol tage , See Fig. 3 .
6 5 watts
PEAK GATE POWER PGM
. .
7 0.5
.
AVERN:;E GATE POWER PGAV watt
PEAK FORWARD
GATE aJRRElIIT
PEAK FORWARD
i(J{M
vK(},1
8
9
2 anp
GATE \QLTAGE:
, 10 ,
Forward
Reverse . 5
volts
volts
Ta1PERA1URE:
Storage
( Case)#
Tstg - .I -65 to +125
-65 to +125
. OC
OC
Operating TC -
Operating (Free- ai r) TFA - See Fig. 4
Electrical and Then'Ii],1 Characteristics at Maximum Electrical Ratings
CHARACTERISTICS SYMBOLS
(unless
.
othe1'Wise specified),
REF.
TC
c
and at Indicated Case Temperature, 'I'C
CONTROLLED-RECT I F I ER TYPE
2NISQ2A 2NJSQ3A 2NISQQA 2NISQ5A 2NISQ6A 2N ISQ7A 2NJSQSA 2NJSQ9A 2NJS50A
UN ITS
Minimum Forward
Breakover Vol tage
vllXl 10 +125 25 50 100 150 200 250 300 400 500 volts
'f;fiiimum .~erage
~;:~ward Blocking IFBOAV 11 +125 22.5 19 12.5 6.5 6 5.5 5 4 3 ma
rrent
Maximum Average
Reverse Blocking IRBOAV 12 +125 22.5 19 12.5 6.5 6 5.5 5 4 3 ma
Current
Maximum Average
Forward
Drop
Vol tage VFAV 13 +80 . 1.2 . volts
Maximum OC Gate
IGT 14 +125 , 45 ma
Trigger Current
OC Gate-Trigger
VGr 15
Voltage:
Maximum
{-40
-65
.. 3.5
3.7 ... volts
volts
, 0.25 volt
{+125
Minimum +100 , 0.3
volt
Holding
(Typi cal)
Maximum Thermal
Current
iHOO 16 +125
. 8
ma
Resistance,
Junction- to-Case
8JC 17 - 2 t Clwatt
* Numerical References are to Table of Terms, Symbols, and Definitions on page 4.

N Measured at the center of any of the six major faces on the perimeter of the hexagonal flange.
u
SUPPLY FREQUENCY 1I: 60 CPS SINE WAvE
CAS[ TEMPERATURE (TC) =80 C
LOAO-RESISTIVE
o 1.-----r--..I'80
~~~~V~C:::R~E~~~~~~;:~~~v~~~J:::~~~~~ttlEO VALUE
150
CONDUCTION
ANGLE
125
'" ""
- --
~~ 100 .............
a~
~,l 75
:1
.... 50
:t~
25
OSlO 15 20
0
, . 6
, . 6

AVERAGE FORWARD CURRENT (IFAV )-AMPERES
92CS-11905R3
Fig. 2 - Rat ing Chart for Types 2N1842A Fig. 3 - Surge Current Rating Chart
through 2N1850A. for Types 2N1842A through 2N1850A.
~ -=~_::--::;
~. - .- .-~
NATURAL COOLING.
SINGLE-PHASE OPERATION.
_ . .: ;:0::-::;:-: CONDUCTION ANGLE= 1800
-: ,,:;-.:;CONTROLLED-RECTIFIER STUD-
-=::::: -:-:::::'" .;:::-: 'It: ::::-i MOUNTED DIRECTLY ON HEAT SINK.
9 :~~ -:::----" ~_ ~ HE:TMi~~~~~I~;-;~~~~C~O~~EOR
WITH
:-:~._ THERMAL EMISSIVITY OF 0.9
_::~.,-r:r';.:....
o 0.5 I 1.5 2 2.5 3
INSTANTANEOUS FORWARD VOLTAGE DROP (vr!-VOlTS
92CS-1l912R1
Fig.4 - Operat ion Guidance Chart Fig.5 - Maximum Forward Characteristics

for Types 2N1842A through 2N1850A. for Types 2N1842A through 2N1850A.
o
o 100 200 300 400 500 -75 -~ -25 a 25 ~ 75 100 125 1~
INSTANTANEOUS APPLIED FORWARD OR CASE TEMPERATURE (TC)-OC
REI/ERSE BLOCKING VOLTAGE (vFeo OR vRsol-VOLTS
92CS-II908RI
Fig. 6 - Typical Forward andReverse Leakage Charac- Fig. 7 - Gate Trigger-Current Characteristic
teristics for Types 2N1842A through '2N1850A. for Types 2N1842A through '2N1850A.
n~
.544
MAX.
L-:'
~
~
.L
1~gr- r E
NOTE 2
O. 1--:-.140
.:~~oIAT-- ~-.L~
l075 T t~~~
.060
CIA 875
1 I
MA I U 'GATE q GE REO
T TRIG Eft A UNITS RED
~T1NG
453 PLANE
A22
j
Fig.8 - Gate Trigger- Vol tage Charaeterist ies HoTE I: COMPLETE THREADS TO EXTEND TO WITHIN 2 1/2
for Types 2N1842A through 2N1850A. THREADS OF HEAD. 01 A. OF UN THREADED PORTION O.2ij9"
MAXIMUM. 0.220" MINIMUM.
HoTE 2: ANGULAR ORIENTA,ION OF THESE TERMINALS IS
UNDEFINED. SQUARE OR RADIUS ON END OF TERMINAL IS
OPTIONAL.
HoTE 3: 1/ij-28 UNF-2A. MAXIMUM PITCH DIA. OF PLATED
THREADS SHALL 8E BASIC PITCH DIA. 0.226B". MINIMUM
PITCH DIA. 0.2225". REF. (SCREW THREAD STANDARDS
FOR FEDERAL SERViCES 1957) HANDBOOK H28 1957 Pl.
HoTE~: A CHAMFER (OR UNDERCUT) ON ONE OR BOTH
ENDS OF HEXAGONAL PORTION IS OPTIONAL.
L,."'""'",
e-- o
OF"
MICA INSULATOR
AVAllA8I.EATPU8ll$l-lD
HAROWAREPAICES
~"'''.". (CHASSIS)
e
DF3H
f. 'NSULATlNGSUS"'NG
~ 0.0.-0.315 in. IB.OO mm) MAX.
~ :~~~~~;~:U~'~:E~' (1.53mm) MAX.

DF68 --.fO'\ HARDWARE PRICES
",v~,I:"~LlfN:TU~:L~~~D
~~ ~:~CTOR
o
HAROWARE I'flICES "" V 'L . l ATPUaLl$HED
HAROWA,"'E PRICES
NRll.A ~}
LOCK WASHER ~
NA38B ~
HEXNUT \OJ
In the United Kingdom, Europe. Middle East, and Africa. mounting-

Sugges tedMount ing Arrangement for Insulat ing Types

'lN1842A- '2N1850A from Heat Sink.
[Il(]5LJD Thyristors
Solid State 2N3650 2N3651
S7430M
35AMPERE SILICON
RCA2N3650 to 2N3653, inclusive, and the S7430M* are
alldiffused silicon controlled rectifiers (reverse-blocking
CONTROLLED
triode thyristors) intended for high-speed switching applica
tions such as power inverters, switching regulators, and CATHODE
highcurrent pulse applications. They feature fast turn-off,
high dv/dt,
frequencies
and high di/dt
up to 25 kHz.
characteristics and may be used at
RECTI FI ERS GATE
The 2N3650 to 2N3653 have forward and reverse off-state

voltage ratings of 100, 200, 300, and 400 volts, respectively.
Type S7430M has a forward and reverse off-state voltage
rating of 600 volts. Fast Turn-Off Types
for Inverter and
Pulse Applications
Fast turnaff time -15 I.IS max.
High di/dt and dv/dt capabilities
High peak.current capability Symmetrical gate.cathode construction - provides
Shorted.emitter gate.cathode construction uniform current density, rapid electrical conduction,
Forward and reverse gate dissipation ratings and efficient heat dissipation
AII.diffused construction - assures exceptional Hermetic construction
uniformity and stability of characteristics Low thermal resistance
2N3650 2N3651 2N3652 2N3653 S7430M

'NON-REPETITIVE PEAK REVERSE VOLTAGE
Gate Open , , .. , . VRSOM 150 300 400 500 700 V
NON-REPETITIVE PEAK FORWARD VOLTAGE
Gate Open . , ,., . , VDSOM 150 300 400 500 700 V
'REPETITIVE PEAK REVERSE VOLTAGE
Gate Open ... , .. , VRROM 100 200 300 400 600 V
'REPETITIVE PEAK OFF-STATE VOLTAGE
Gate Open , , ..... VDROM 100 200 300 400 600 V
'PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT:
For one cycle of applied principal voltage (60 Hz, sinusoidal)
ON-STATE CURRENT:
ITSM .- 180 ~ A
For case temperature (Te) = 250C

Average DC value, conduction angle of 1800
IT(AV) .. 25 ~
. A
RMS value .... IT(RMS) .- 35 A
'RATE-OF-CHANGE OF ON-STATE CURRENT:
VDM ~ v(BQ)O' IGT ~ 200 mA. t,- ~ 0.1 fJ-S (See Fig. 2)
di/dt .- 400 . A/fJ-s
'GATE POWER DISSIPATION

..
.~
PEAK FORWARD (for 10 fJ-S max.) ...... PGM 40 W
AVERAGE (averaging time ~ 10 ms, max.) .. PG(AV) .- 1 W
'TEMPERATURE RANGE
Storage .............................. .. -65 to 150 . C ~
Operating (Case). .. .- -65 to 120 ~ C C/l
Soldering (10 s max. for case) ................ .- 225 ~ C (')
:J;:)
'In accordance with JEDEC registration data format (J&-14, RDFU-- ",'
applies to the JEDEC (2N-Seriesl types only.
11-73
ELECTRICAL CHARACTERISTICS, At Maximum Ratings and at Indicated Case Temperature (TC)
LIMITS
Type Type Type Type Type
2N3650 2N3651 2N3652 2N3653 S7430M
MIN. TYP MAX. MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.
INSTANTANEOUS FORWARD BREAKOVER

VOLTAGE: V(BOlO 100 - - 200 - - 300 - - 400 - - 600 - - V
Gate Open, T C = 120 oC

(Gate ()pen, T C = 120 C) - - - - - - -
FORWARD, VOO = VOROM
100M 6 6 5.5 - 4 - - 3
A
REVERSE, VRO = VRROM IRROM - - 6 - - 6 - - 5.5 - - 4 - - 3
INSTANTANEOUS ONSTATE VOLTAGE:
For iT" 25 A, T C = 25 c vT - - 2.05 - - 2.05 - - 2.05 - - 2.05 - - 2.05 V
DC GATE TRIGGER CURRENT:
Vo = 6 V (DC), RL = 411, TC = 25 c - 80 180 - 80 180 - 80 180 - 80 180 - 80 180
IGT A
Vo = 6 V (DC), RL = 211, T C = -65 OC - 150 500' - 150 500' - 150 500' - 150 500' - 150 on
Vo = 6 V (DC), RL = 411 , TC = 25 0c - 1.5 3 - 1.5 3 - 1.5 3 - 1.5 3 - 1.5 3
VGT V
Vo = VOROM, RL = 20011, TC = 120 c 0.25' - - 0.25 - - 0.25' - - 0.25' - - 0.25 - -
Vo = 6 V (DC), RL = 211, T C = -65 c - 2 4.5' - 2 4.5' - 2 4.5' - 2 4.5' - 2 4.5
Gate Open
At TC =25 0c
iHO
- 75 150 - 75 150 - 75 150 - 75 150 - 75 150 lOA
At TC =-65 c - 150 350 - 150 350 - 150 350 - 150 350 - 150 350
CRITICAL RATE-OF-RISE OF OFF-STATE
VOLTAGE:
Voo = VOROM dv/dl 200 - - 200 - - 200 - - 200 - - 200 - - V/"s
Exponential rise, TC = 120 0c,
(See Fig_ 4.)
CIRCUIT C<J,lMUTATEO TU RN-OF F
TIME (Rectangular Pulse):
VOX = VOR<J,l , iT = 10 A (pulse
duratioo = 50 "s), IGT = 200 lOA lq - 11 15 - II 15 - 11 15 - 11 15 - II 15 "s
at turn-OIl, -<li/dt = 5 AI"s,
dv/dt = 200 V/"s, VRX = 15 min.,
VGK = 0 V (at turn-otf),
TC = 120 OC (See Fig_ 4 & 5)
CIRCUIT COMMUTATEO TURN-OFF
TIME (Half-Sinusoidal Waveform):
VOX = VOROM, iT = 100 A (pulse
duratioo = 1.5 "s), IGT = 200 lOA lq - 12 15' - 12 15' - 12 15' - 12 15' - 12 15 "s
dv/dt = 200 V/"s, VRX = 30 V min.,
VGK = 0 V (at turn-off),
TC = 115 c (See Fig. 6 & 7)
THERMAL RESISTANCE:
Jlllctioo-to-Case eJ-C - - 1.7 - - 1.7 - - 1.7 - - 1.7 - - 1.7 CIW
.~ I"
r -------
l ~---r'
, I
VRSOM----l ~VRROM
/
dvd'""'I
I
VDX
-------- :----i- ~VRX VRXM

o
i I
I
I
'TX. I :
- L __ , __ -1-I I
,------0
I 1
fRXM -----r- I
Iff I 1 ,
9
----t
~"0631 1 I
'" . I I------- I ------l
q
t" RC
Fig. 4-Relationship between off-state voltage, reverse volt-

age, on-state current, and reverse current, showing
reference points defining turn-off time (tgJ, rectan-
gular pulse.
SUPPLY $UPPl Y
VOLTAGE VOLTAGE
~II II~
*FQR ADDITIONAL INFORMATION

ON GATE TRIGGER CIRCUITS, Ere.
REFER TO JEOEC STANDARD
No.7 SECTION 6.204.2.
0 _
VOLTAGE
ANODE CATHODE I
I
I
I VRX. I ~II
~'q---.l
I
Fig. 6-Relationship between off-state voltage, reverse volt

age, on-state current, and reverse current showing
referencepoinrs for specification oftum-off time (tq),
half sine wave pulse.
COOLING CONSIDERATIONS
The overall thermal resistance, case to air, needed to
operate .these devices at a given current and a specific
ambient air temperature is shown in Fig. 8. For example:
dissipation of 20 watts and an ambient air temperature of
43 c (110 OF), the required thermal resistance, case to
air, is 2 C/W. This required case-ta-air thermal resis-
tance included both case-ta-heat sink and heat sink-to-
air thermal resistances.
Typical values of case-ta-heat sink thermal resistances

for different mounting arrangements are shown in Table l.
Thermal resistance characteristics of commercial heat
sinks are contained in various manufacturers' data sheets.
CURRENT WAYEFORM
'T:=ru
--J2:--J
35 . (RM5)
LIMIT
~ 100 1~
PEAK ONSTATE CURRENT (lTM)-A
CURRENT WAVEFORM CURRENT WAvEFORM
ITM -A-A
0-' L...J \
1
1110
-,,-1"\.
0-1 L...J \
-tt-J ! -tt-J
OFF-STATE VOLTAGE (VDX)" 600 V

RATEOfRISE OF OFF-STATE VOLTAGE
(d./dt) 200 V/~ .
PEAK REVERSE VOLTAGE (VRXM)" 200 V
HALFSINUSOIDAL CURRENT WAVE FORM
CASE TEMPERATURE (Tel" l1S 0(
o toO 200 )0()

RATE(F-RISE (IF REAPPLIED OFf-SlAlE VOLlAGE (d.I.t)-Y/lI
""."',
IN5TAHTANEOUS OFF-STATE VOLTAGE ("OX). 600 V REAPPLIED OFF-STATE VOLTAGE (VOX>. 600 V
RATE-OF-RISE OF OFF-STATE VOLTAGE (d"/dt). 200 VIt,. RECTANGULAR CURRENT PULSE

PEAK REVERSE VOLTAGE (VAXM> 200 V RATE-OF-DESCENT OF ON-STATE CU RRENT
HALF.SINUSOIDAL CURRENT WAVE FORM (-di/dt) 10 Alus
CASE TEMPERATURE (TC>. 1150(
, CASE TEMPERATURE (T >. 120 ore
'OOOC
";i"oc
..,
g)
2
.., "j'jEjTEj"jPiERj'iTiURiEi(iTcjlj"j'i"'IOCiiiiimilllII
;lIC'
RECTANGULAR PULSE (FORWARD CURRENT) WIDTH. SO ,
r~ S
...
~~
~~~. ~
:+-,\~~~"i'~$~:ij:ijt
a
~
10
,,"-
c...~~f{f ,~
ffi t;t:~'\~
~ f(,~'4:-
I'II~III
2N3650, 2N3651,2N3652,2N3653,S7430M _
Directly mounted on heat sink (Heat-
~ 1/' 28THR'Ao
Sink Compound: Dow Corning 340
0.90C/W
oF68 silicone heat-sink compound, or
~
~
~~~~
..~~~~~~~:.EO
AROWIilA(I'R'C(S
equivalent.)
Mounted on heat sink with a 0.004 to

2N3650- 53 0.006-in. (0.10 to O.l5-mm) thick
G
(~~:~~~7K 40735 mica insulating washer (between unit
and heat sink).
OF3H
Without heat-sink compound 2.80C/W
INSULATING BUSHING
With heat-sink compound 1.80C/W
0---- ~H~CK~'~~ ~no~g6~;~'7,t,~t~m) MAX
Heat-Sink Compound: Dow Corn ing
~;i: INSULATOR -fO\ ~::~~:~~
:;,:~~LIS"E() 340 silicone heat-sink compound, Of
.o.VAlllleu.o.1PU8L1SHO ~~NR68A equivalent.)
,o,RDWAR( PRtCES -" CONNECTOR
...
"'V"'L"IIU
ROW"REPA'CES
"'PU8~IS"ED
-Normal value. Actual value will vary slightly depending on use of heat sink
compound, mounting surface, insulator thickness, mounting torque, and etc.
~~~O~~SHER }
NA388" ~
HEXNUT "l::J) NOTE 1: Dimensions in parentheses are in millimeters and are de-
rived from the basic inch dimensions as indicated.
NOTE 2: The recommended torque is 26 to 36 in. -lb. applied to a
\4-28 UNF-2B hex nut assembled on thread. The applied torque
hardware policies may differ; check the availability of all items during installation should not exceed 50 in. -lb.
DIMENSIONAL OUTLINE
JEDEC TO-48
I I I
II. II .' --
TEMPERATURE
.0; ,\
TERM INAL NO.2
LJ _f.-__ A
-=(:I:
NG
MEASUREMENT
PLANE
92CS-15208R2
INCHES MILLIMETERS
SYMBOL NOTES
MIN. MAX. MIN. MAX.
A 0.330 0.505 8.' 12.8 -
,
00,
0.5
- 0.5
0.562
-
13.82
13.81
14.28
-
-
F 0.113 0.200 2.87 5.08 2
J 0.'" 1.100 24.13 27.94 -
M 0.215 0.225 5.46 5.71
N 0.422 0.453 10.72 11.50 -
or
.T,
0.058
0.138
0.'"
0.148
1.47
3.51
1.73
3.75 ,
1
.w 1/428 UNF2A 1/428 UNF2A 2
NOTES:
1. Contour and angular orientation of th&se t8l'"minall is optional. TERMINAL CONNECTIONS
is optional.
Terminal 1 (Small Lug) - Gate
3. 4lW is pitch diameter of coated threads. Terminal 2 (Large Lug) - Cathode
REF: ScrewThread Standards for Federal Services, Handbook H28.
P.rt I Recommended Torque: 25 inchpounds. Terminal 3 (Stud) - Anode
ffilCffiLJD 2N3654
Solid State 2N3655
2N3658 S7432M
Fast turn-off time - 10 J.lS max.

High di/dt and dv/dt capabilities
Shorted-emitter gate-cathode construction Center gate construction ... provides
'I Anode
... contains an internally diffused resistor
between gate and cathode
rapid uniform gate-current spreading for
faster turn-on with substantially reduced
Low thermal resistance heating effects
These RCA types are all-diffused, silicon controlled rectifiers applications. These types may be used at frequencies up to
designed for high-frequency power-switching applications such 25 kHz.
as inverters, switching regulators, and high-current pulse

'NON-REPETITIVE PEAK REVERSE VOLTAGE:'
Gate Open VRSOM 75 150 300 400 500 700 V
NON-REPETITIVE PEAK OFF-STATE VOLTAGE:'
Gate Open . VOSOM 75 150 300 400 500 700 V
'REPETITIVE PEAK REVERSE VOLTAGE:'
Gate Open _ VRROM 50 100 200 300 400 600 V
'REPETITIVE PEAK OFF-STATE VOLTAGE:'
Gate Open . VOROM 50 100 200 300 400 600 V
ON-STAT~ CURRENT:
T C = 40 C, conduction angle = 180
R~_ _ . ITIRMS) 35 A
Average . IT(AV) 25 A
'PEAK SURGE (NON REPETITIVE) ON-STATE CURRENT: ITSM
'RATE OF CHANGE OF ON-STATE CURRENT:
V o=VOROM.IGT 200 mA. t, = 0.1!,' = ISee Fig. 151 di/dt 400 A/!,s
FUSING CURRENoT lfo, SCR protection):
TJ = -65 to 120 C. t =
1 to 8.3 m, 12t 165 A2s
'GATE POWER DISSIPATION:'
Peak Forward (for 10 IJs max., See Fig. 7) 'PGM 40 W
Average (averaging time = 10 ms max.l PG(AVI 1 W
'TEMPERATURE RANGE:
Storage " . Tstg -65 to 150 c
Operating (Case) . TC -65 to 120 c
TERMINAL TEMPERATURE lOuring soldering): TT
For 10 s max. (terminals and casel 225 c
STUD TORQUE: 1"S
Recommended 35 in-Ib
Maximum (00 NOT EXCEEO) 50 in-lb
In accordance with JEDEC registration data format (JS-14, RDF-1) filed for the JEDEC (2N series) types.
These values do not apply if there is a positive gate signal. Gate must be open or negatively biased .
. For temperature measurement reference point, see Dimensional Outline.
LIMITS
FOR ALL TYPES
Except as Specified
MIN. TYP. MAX.

(Gate open, T C = 120CI IDOM
Forward Current IIDOM) at VD = VDROM or
Reverse Current (I ROM I at V R = V R ROM IROM mA
2N3654,2N3655,2N3656,s7432M ..... - - 6
2N3657 ....................... - - 5.5
2N3658 . . . . . . . . . . . . . . . . .. - - 4

iT = 25 A (peak), T C = 25C ..... vT - - 2.05 V

Gate open, T C = 25C .. - 75 150
mA
T C = _65C .... .... .. ... . ...... ............. iHO - 150 350*
Critical Rate of Rise of Off State Voltage:

V D = V DROM, exponential voltage rise, dv/dt 200 - - V/!1s
Gate open, TC = 120C Isee Fig. 16) .....

VD= 6 V (de), RL =4n. TC= 25C ..... .. .... ..... - 80 180
mA
VD= 6V (de), RL = 2n. TC= _65C ....... ... .. IGT - 150 500*

VD = 6 V (de), RL = 4 n, TG = 25C ..... . ... . . - 1.5 3 V
VD= VDROM' RL = 200n, TC= 120C ... .. ..... VGT 0.25* - -
VD=6 V Idel, RL = 2n, TC= _65C ... - 2 4.5*

(Rectangular Pulse)
VDX = VDROM' iT = 10 A, pulse duration = 50 !1S,
dv/dt = 200 V/iJ.s, - di/dt = -5 A/iJ.s, IGT = 200 mA,
VRX = 15 V min., VGK = 0 V lat turnoff), TC = 120C tq - - 10 iJ.s
Isee Figs. 19 & 20).

(Sinusoidal Pulse)
VDX = VDROM' iT = 100 A, pulse duration = 1.5 !,S, dv/dt =
200 V/iJ.s, VRX = 30 V min., VGK = 0 V lat turn-off) tq - 10 iJ.S
TC = 115C Isee Figs. 17 & 18)
Thermal Resistance Junction-to-Case:

Steady-State. Re-JC - - 1.7 C/W
CURRENT WAVEFORM
ITM_I\_"
0-' L..J ,
-I.d- I
L"...j
'., 'I"
I I
r--- b,_
LiDO : IVOSOM
I I
I
VRSOll~ ""-VRROll VOROM
SO 100 150 200

PEAK ON-STATE CURRENT (llM) -... 92SS.4318~1
Fig. 2 - Power dissipation vs. peak on-state current.
CURRENT WAvEFOR .. CURRENT WAVEFORM
ITM _-fLJ'\
...1" I- 'T:TLJ
-'2--1 ~;---l
'1 '2., 0.05
~J
o.'s.
~<
35 .. (RM5)
1I1tl1T
m 100 1~
PEAK ON-STATE CURRENT (IT/II)-'''
msml
Fig. 3 - Maximum allowable case-temperature vs. peak
on-state current.
CURRENT W"'VEFORM
'T:TLJ
~.;---l
35 .. (RittS)
LIMIT
fft
REAPPLIED Off STATE VOLTAGE (Vox)" 600 V
-l;O;F~F'~\T!A~TE!!VOlL1TA1G;E~(V1D!)j
--;so;V;~;:llllllll
RATE.Of.RISE Of REAPPLIED OFf-STATE
r
15 VOLTAGE (d. dt)= 200V/~s
CURRENT PULSEWIDTH (RECTANGULAR)" 50 ~ s
RATE.OfDESCENT Of ON STATE-CURRENT
(di (II)" 10 A ~ s ,,, SO to.
~Eto.~O"'-')'to.'
~ CIJRRE'" ~\'~;'.~;i]"~ff=ff=~
S
OffSTATE VOLTAGE (VOX)" 600 V ONSTATE CURRENT (IT)" 20 A (RECTANGULAR PULSE)

RATEOf-RISE Of OFF-STATE VOLTAGE CASE TEMPERATURE (TC)" 1200C
(dy/dl)" 200 v,~ s
PEAK REVERSE VOLTAGE (VRXM)" 200 V
I "" :::' :-:-:::- .:C': i':'~
HALf SINUSOIDAL CURRENT WAVE fORM
CASE TEMPERATURE (TC) " 115 oC
ii-::
o lOO 200 JOO
RATE.Of.RISE Of REAPPLIED OFFSTATE VOLTAGE (d. dt)-V ~s

92S54348 9255-4347
Fig. 13 - Typical variation of turn-off time with peak on-state Fig. 14 - Typical variation of turn-off time with rate-of-rise
current (half-sine-wave pulse). of reapplied off-state voltage (rectangular pulse),
CRITICAL dv/d' ~
.2Y.=O.632
dl I
t= RC
SII
Fig. 17 - Relationship between off-state voltage, reverse voltage,

onstate current, and reverse current showing reference
points for specification of turn-off time (tq), half-sine-
wave pulse.
VDX
-------- :----i- ~VRX vRXM

o
SUPPLY
VOLTAGE
I I ~~~jll
I
I
II~
I
I
I
- -----0
I
I
I
'n -------'9' ------1
I
'q ----I
Fig. 19 - Relationship between off-state voltage, reverse VOltage,

on-state current, and reverse current showing reference
points defining turn-off time (tq), rectangular pulse.
~ " ,"m"
~OF~
MICA INSULATOR
~AVAILA8LEATPV8LISHEO
~ HAROWAREPR'CES
CD
"'AT"NK
(CHASSIS)
e
DF3H
INSULATING BUSHING
0---- ~~c~~'~~i
~nO~g6~i~7:.~t~~) MAX.
~i~: INSULATOR
/l,VA'LA8LEATPU8LlSHEO
-@)
ifT
0
AVA'LABLE/l,TPU8L'SHEO
:/l,::~REI'RICES
CONNECTOR
o
H/l,ROWAREPR,CES - AV/l,'L/l,BLEATPUBLISHEO
H/l,ROWAREPR,CES
NRll0A ~}
LOCK WASHER ~
NA38B ~
HEXNUT ~

DIMENSIONAL OUTLINE
JEDEC TO-48
THERMAL
RESISTANCE*
TYPE MOUNTING ARRANGEMENT
(Case-to-Heat
Sink)
INCHES MILLIMETERS
Directly mounted on heat sink (Heat- SYMBOL NOTES
MIN. MAX.
Sink Campaunt: Dow Corning 340
,_~~'-
-
0.9C/W A 0.330 0.505 8.4 12.8 -
silicone heat-sink compound, or .0,, - 0.544 - 13.81 -
equivalent.) 0.544 0.562 13.82 14.28 -
F 0.113 0.200 2.87 5.08 -
2N3654- Mounted on heat sink with a 0.004 to J 0.950 1.100 24.13 27.94 -
M 0.215 5.46 5.71 -
2N3658 0.006-in. 10.10 to 0.15-mml thick N 0.422 I 02~
0.453 10.72 11.50 -
S7432M mica insulating washer (between unit .T 0.058 0.068 1.47 1.73 -
and heat sink). .T, 0.138 0.148 3.51 3.75 -
Without heat-sink compound 2.8C/W .w 1/428 UNF2A 1/428 UNF2A 1
With heat-sink compound 1.8C/W NOTES:

1. 4JW.is,pitch diameter of coated threads.
REF: ScrewThread Standards for Federal Services, Handbook H28,
Heat-Sink Campaunt: Dow Corning
Part I Recommended Torque: 35 inchpounds.
340 silicone heat-sink compound, or
equivalent.)
*Normal value. Actual will vary slightly depending on use of heat sink No.1 - Gate
compound. mounting surface, insulator thickness, mounting torque, No.2 - Cathode
and etc. Case. No.3 - Anode
NOTE 2: The recommended torque is 35 in.-Ib. applied to a Ya-28

UNF-2B hex: nut assembled on thread. The applied torque
during installation should not exceed 50 in.lb.
Rectifiers
RCA-IN440B, IN441B, IN442B, IN443B,lN444B,
and IN445B are heTlretically sealed silicon rectifiers of
the diffused-junction type, designed for use in power
DIFFUSED JUNCTION
supplies of magnetic amplifiers, radio receivers, dc
':Jlocking circuits, power supplies, and other military SILICON RECTIFIERS
md industrial applications.
These devices have dc forward-current ratings

to 0.75 ampere at an ambient temperature of 250C,
and peak reverse voltage ratings of 100, 200, 300, 400, For Power-Supply Applications
500 and 600 volts, respectively.
In Industrial and Military
The IN440B through IN445B feature (1) sturdy
and compact mount structure, (2) axial leads for flexi- Electronic Equipment
bility of circuit connections, (3) welded hermetic seals-
every unit is pressure-tested to assure protection
against moisture and contamination, (4) superior junc- stringent environmental and mechanical tests to
tion formation made possible by a diffusion process insure dependable performance in industrial and
with very precise controls .. In addition, these devices military applications
are designed to meet the following stringent environ-
hermetically s'laled JEDEC 00-1 package
mental, mechanical and life requirements of prime
importance in military applications: (a) special temper- wide operating.temperature range:
ature-cycling tests to assure stable performance over
lN440Bl
the entire operating temperature range, (b) special lN441B lN444B} 0
coating to provide protection against the effects of se- 1N442B -65 to +1650C lN445B -65 to +150 C
vere environmental conditions, lN443B
RECTIFIER SERVICE
Absolute-Maximum Ratings, for a Supply Frequency of 60 Hz:
IN440B IN441B IN442B IN443B IN444B IN445B UNITS

PEAK REVERSE VOLTAGE . 100 200 300 400 500 600 V
RMS SUPPLY VOLTAGE
For resistive or inductive loads ..... 70 140 210 280 350 420 V
DC REVERSE (BLOCKING) VOLTAGE. 100 200 300 400 500 600 V
FORWARD CURRENT:a
DC:
at TA = 50C. 750 750 750 750 650 650 mA
at TA = 100C . 500 500 500 500 425 400 mA
at TA = 150C 250 250 250 250 0 0 mA
Peak, Repetitive . _ . 3.5 3.5 3.5 3.5 3.5 3.5 A
Surge, One-Cycle 15 15 15 15 15 15 A
TEMPERATURE RANGE (Ambient):
Operating. 165 165 165 165 150 150 c
Storage. -65 to +175 c
CHARACTERISTICS lNMOB lN441B lN442B lN443B lN444B lN445B UNITS
Maximum Forward Voltage Drop (DC)

at full load current. ... ..... . 1.5 1.5 1.5 1.5 1.5 1.5 V
Maximum Reverse Current (DC)
at maximum peak reverse voltage 0.3 0.75 I 1.5 1.75 2 }J1\
Maximum Reverse Current

(averaged over I complete cycle
of supply voltage):
at maximum rated PRV, T A = 1500C 100 100 200 200 200 200 }J1\
r
~ 750
<l
'"
w
<r "
-' ~
<
~ 62! C
I
>-
lr
z
w500
~ 10
lr &'
a
0375
'"~
8
lr z
1ilr ~
z
e 250 ~
g '2
~ 125
"x
~
Fig.2 - Typical Forwara Voltage ana Current Charac-

teristic for RCA-1N440B through lN445B.
The maximum ratings in the tabulated data are The flexible leads of these rectifiers are
established in accordance with the following usually soldered to the circuit elements. It is
definition of the Absolute-Maximum Rating System desirable in all soldering operations to provide
for rating electron devices. Some slack or an expansion elbow in the leads to
prevent excessive tension on the leads. It is
Absolute-Maximum ratings are limiting values important during the soldering operation to avoid
of operating and environmental conditions applic- excessive heat in order to prevent possible damage
able to any electron device of a specified type to the rectifiers. To absorb some of the heat,
as defined by its published data. and should not grip the flexible lead of the rectifier between
be exceeded under the worst probable conditions. the case and the soldering point with a paIr
of pliers.
The device manufacturer chooses these values
to provide acceptable serviceability of the device, When dip soldering is employed in the assembly
taking no responsibility for equipment variations, of printed circuitry using these rectifiers, the
environment variations, and the effects of changes temperature of the solder should not exceed
in operating conditions due to'vdriations in 2~5 C for a maximum immersion period of 10 sec-
device characteristics. onds. Furthermore, the leads should not be dip
soldered beyond points A and B indicated on the
The equipment manufacturer should design so Dimensional Outline Drawing.
that initially and throughout life no absolute-
maximum value for the intended service is exceeded Because the metal cases of these recti-
with any device under the worst probable operating fiers may operate at voltages which are danger-
conditions with respect to supply-voltage varia- ous, care should be taken in the design of
tion, equipment component variation, equipment equipmen~ to prevent the operator from coming
control adjustment, load variation, signal varia- in contact with the rectifier. It is recom-
tion, environmental conditions, and variations mended that these rectifiers be mounted on the
in device characteristics. underside of the chassis.

100 AMBIENT TEMPERATURE (OC) = ISO
-DO NOT EXCEED MAXIMUM
PEAK REVERSE VOLTAGE
RATING.
4
- -
~, I
~ 2
_1- C- ~ ~
:>
'"
O
a:
u ---

10
j
W
'"5
~
a:
4
Fig.3 - Typical Dynamic Reverse Characteristic

for RCA- IN440B through IN445B.
.,.
MAX. MIN. MAX.
0.027 0.035 0.69 0."

0.125 3.18
0 0.360 0.400 9.14 10.16
0, 0.245 0.280 6.22 7.11
.0, - 0.200 5.08
F 0.075 1.91
G, 0.725 18.42 ANODE
K 0.220 0.260 5.59 6.60
L 1.000 1.625 25.40 41.28
a 0.025 0.64
H 0.5 12.7
1. D,menston to allow lor plOch or ~al deformat.on TERMIHAL DIAGRAM

anywhere along tubolauon (optIOnal!. for Types
2 Diameter to be controlled from free end of lead to
within 0.188 oneh 14.78 mm) from the pomt of lH440B, lH441B, lH442B, lH443B, lH444B, lH445B
attachment to the body. Within the 0.188 Inch
{4.78 mm} dlrTlenslon.the diameter may vary to
DDJ]3LJD
Solid State 1N536 1N538 1N540
Division
1N5371N5391N5471N1095
Flanged-Case, Axial-Lead Types

For Power-Supply Applications
Features:
Wide operating-temperature range: -65 to +6SOC.
Stringent environmental and mechanical tests to insure
dependable performance in industrial and military
applications.
Peak reverse voltages from SO to 600 V.
Max. dc forward current = 2S0 mA at T A = 1S00C.
Hermetically sealed JEDEC 00-1 package.
RCA-1NS36, lNS37, lNS38, lNS39, lN540, lN547, and microamperes at rated peak reverse voltage and ambient
lNl095 are hermetically sealed silicon rectifiers of the temperature of 2SoC.
diffused-junction type_ They are specifically designed for These silicon rectifiers are designed to meet such stringent
use in power supplies of industrial and military equipment environmental, mechanical, and life requirements of prime
capable of operating at dc forward currents up to 7S0 importance in military applications as: (1) sturdy and
milliamperes and temperatures ranging from -6So to +16SoC. compact mount structure, (2) axial leads for flexibility of
circuit connections, (3) welded hermetic seals, and (4) special
These silicon rectifiers have peak reverse voltage ratings from temperature cycling tests to assure stable performance over
SO to 600 volts, and a maximum reverse current of S the entire operating temperature range.
RECTI FIER SERVICE, ABSOLUTE-MAXIMUM RATINGS, for a Supply Frequency of 60 Hz:
lN536 lN537 lN538 lN539 lN540 lNl095 lN547
PEAK REVERSE VOLTAGE. ....... 50 100 200 300 400 500 600 V
RMS SUPPLY VOLTAGE

For resistive or
inductive loads ................. 35 70 140 210 280 350 420 V
OC REVERSE - (BLOCKING)
VOLTAGE ................... 50 100 200 300 400 500 400 V
FORWARO CURRENT':
DC. for resistive or inductive loads:
T A = 500C ................... 750 750 750 750 750 750 750 mA
SURGE. one cVcle . . . . . . .. . . . . . . . . . 15 15 15 15 15 15 15 A

OPERATING FREQUENCy ........ 100 100 100 100 100 100 100 kHz
TEMPERATURE RANGE (Ambient!:
Operating ...................... -65 to +165 c
Storage ........................ -65 to +175 c
-For maximum de forward current values at ambient temperatures other than those specified, see Rating Chart, Fig. 1.
1N536 1N537 1N538 1N539 1N540 1N547 1N1095
Maximum Forward Voltage Drop

(DC) at a load current of
500 mA ......................... 1.1 1.1 1.1 1.1 1.1 1.2 1.2 V
Maximum Reverse Current (DC)

at maximum peak reverse voltage . ....... . 5 5 5 5 5 5 5 IlA
Maximum Reverse Current

(Averaged over 1 complete
cycle of supply voltage):
at maximum rated PRV,
T A = 150oC ......... . . . . .. . . . . . . 0.4 0.4 0.3 0.3 0.3 0.35 0.3 mA
.. DO NOT EXCEED PEAK REVERSE

, VOLTAGE RATING.
UNCTION TEMPERATURE ("C)I'~OI
..~~ ,
'"
w
w
100

~ I I I I I I I

5
"i
1
w
" ,
'~ 2~
I I I
~ I

I
I
I I I I I I
INCHES MilLIMETERS
SYMBOL NOTES
MIN. MAX. MIN. MAX.
ob 0.027 0.035 0.69 0.89 2
bl 0.125 3.18 1
,,0 0.360 0.400 9.14 10.16
,,01 0.245 0.280 6.22 7.11
002 0.200 5.08
F 0.075 1.91
Gl 0.725 18.42
K 0.220 0.260 5.59 6.60
1 1.000 1.625 25.40 41.28
Q 0.025 0.64
H 0.5 12.7

anywhere along tuhulation (optional).
---------------------------------- File No. 89
Rectifiers
DDJ]3LJD
Solid State 1N1763A
Division
1N1764A
RCA-1N1763A and lN1764A are hermetically

sealed silicon rectifiers of the diffused-junc-
tion type, designed for use in power supplies of
DIFFUSED-JUNCTION
color and black-and-white
radio recei vers, phonographs,
television receivers,
high-fidelity SILICON RECTIFIERS
amplifier systems, and other electronic equipment
for commercial and industrial applications.
RCA-1N1763A and lN1764A supersede and are Flanged-Case Axial-Lead Types
unilaterally interchangeable with RCA-1N1763 and
lN1764, respectively. The new rectifiers In-
corporate all of the superior performance
reliability features which have gained industry
and For Power-Supply Applications
acceptance for thei r RCA prototypes,
addition, offer substantially higher dc-output-
and, in
In Commercial and Industrial
current capabilities, lower reverse (leakage)
currents, lower forward voltage drop, and a wider Electronic Equipment
operating-temperature range.
Both devices have dc forward-current ratings
of 1 ampere - resistive or inductive load, and
0.75 ampere - capacitive 'load at free-air tem-
peratures up to 750C (natural convection cooling). high dc-output-current capabil ity:
They can provide dc output currents of up to 2 a) with natural convection
amperes to capaci tive loads when attached to simple I ampere - res ist ive or
heat sinks. inductive load
RCA-1N1763A has a peak-reverse-voltage rating 3/'4 ampere - capac it ive
of 400 volts, and is intended for applications in load
which the rectifier operates directly from an ac
power line supplying up to 140 volts rms for b) with simple heat sinks:
capacitive loads, or up to 280 volts rms for 2 amperes - 1 to 1050e
resistive or inductive loads. capacitive load f Tc
RCA-1N1764A has a peak-reverse-voltage rating up to 2 amperes - 1 to 750e
of 500 volts, and is intended for applications in capacitive load f TFA
which the rectifier operates from an ac line
through a step-up transformer supplying up to 175
volts rms for capacitive loads, orup to 350 volts
low dc reverse (leakage) currents:
5 ~a max. at 250e; 100 ~a max. at 750e
rms for resistive or inductive loads.
RCA-1N1763A and lN1764A have an operating-
temperature range of -65C to +1350C. They utilize low forward voltage drop:
the JEDEC 00-1 flanged-case, axial-lead package 1.2 volts max. at a dc forward current
which provides flexibility of installation in of I ampere
both hand-wired and printed-circuit equipment
designs. These new rectifiers, like their RCA wide operating-temperature range:
prototypes, are conservatively rated and incor- -650e to +1350e
porate the following design features: (1) welded,
hermetically sealed case for protection against
moisture and contamination, (2) superior junction
characteristics made possible by a precisely con-
trolled diffusion process; (3) extensive and unilaterally interchangeable with Types
rigorous quality-control procedures. IHI763 and IH176'4
Type Type
IHI763A IHI76~A
PEAK REVERSE VOLTAGE. 400 500
RMS SUPPLY VOLTAGE:
For operation with resistive or
inductive loads ..... max. volts
For operation with capacitive loads max. volts
At free-Air At free-A ir
Temperatu.res Temperatures
Up to Above Up to Above
75C 75C 75C 75C
FORWARD CURRENT:
For operation with resistive or
inductive loads:
See fig.1 See fig.1 max. amp
AVERAGE (DC). . 0.75 0.75 max. amp

PEAK RECURRENT.
TEMPERATURE RANGE (FREE-AIR):

35 1
See fig.1
35 l See fig.1
max.
max.
amp
amp
Operating -65 to +135 -65 to +135 c

Storage . -65 to +150 -65 to +150 c
Fig.2 - Repetitive Surge Current Rating Chart for

RCA-1N1763A and 1N1764A
1N1763A.1N1764A File No. 89
Maximum DC Reverse Current;
At a Peak Reverse Voltage of 400 volts I-'a
At a Peak Reverse Voltage of 500 volts I-'a
C h a ract e r is tic s, at a Ji'ree-A ir !Femperature of 7jOe:
Maximum DC Reverse Current:

At a Peak Reverse Voltage of 400 volts O. I ma
At a Peak Reverse Voltage of 500 volts 0.1 ma
Typical Performance Characteristics, at a Free-Air Temperature of 2jOe:
Type Type
INI763A INI764A
Half-Wave Rectifier Service:
RMS Su pp Iy Voltage. 117 117 117 150 ISO ISO volts
Fi Iter-Input Capacitor (C) . 100 200 350 100 200 350 I-'f
Surge-Limiting Resistance#.. 5.6 5.6 5.6 6.8 6.8 6.8 ohms
DC Ou tpu t Voltage at In pu t
to Filter (Approx.):
At half-load current of 375 ma. 140 145 150 180 185 190 volts
At full-load current of 750 ma. 125 130 140 155 160 170 volts
Voltage Regulation (Approx.) :
Half-load current to full-load current. 15 15 10 25 25 20 volts
Half-Wave Voltage-Doubler Service:

R~IS Supply Voltage. 117 117 117 ISO ISO 150 volts
Fi Iter-Input Capacitor (C). 100 200 3SO 100 200 350 I-'F
Surge-Limiting Resistance
# 5.6 5.6 5.6 6.8 6.8 6.8 ohms
DC Output Voltage at In pu t
to Filter (Approx.) :
At half -load current of 375 ma. 255 265 275 325 340 350 volts
At fu II-load current of 750 ma. 225 240 255 285 305 325 volts
Voltage Regulation (Approx.):
Full-Wave Voltage-Doubler Service:

mls Supply Voltage. 117 117 117 150 ISO ISO volts
Filter In pu t Capacitor (C). 100 200 350 100 200 350 I-'F
Surge-Limiting Resistancefl.. 5.6 5.6 5.6 6.8 6.8 6.8 ohms
DC Output Voltage at In pu t
to Filter (Approx.):
At half-load current of 375 ma. 275 280 290 350 355 365 volts
At full-load current of 750 ma. 250 260 275 320 330 345 volts
Voltage Regulation (Approx.):
# The transformer series resistance or other resistance in the rectifier supply circuit may be deducted from the
value shown.
1'Ji;l\ln ~
~~ I _I\IR 1<."" -
~ :;~INI7641\ 0
~ , 10
a:
~
30
'" , e~
~ .
W
W (TFA)=25C 2~
a:
W
INI764A
~~ 20
a:
~176t I I
~~ 15
2 ~~
<
I
I;; 5
7-
I !
0.5 I 1.5 2 2.5

INSTANTANE.OUS fORWARD VOLTS ("'F)
92CS-9730R3
Fig.3 - Typical Dynamic Reverse Current Character- Fig.4 - Typical Forward Voltage and Current Char-
istics forRCA-1N1763A and 1N1764A. acteristics for RCA-1N1763A and 1N1764A.
o
a:
~
a:W
00
"-"
>- ..
12.5Z
l:!>
a:>-
o Wo."
u"
~q
7.5 ~U)
o.w
",5
,,0.
5 "''''
><"
"'"
2.5
o
-75 -so -25 0 25 50 75 100 125 ISO
CASE TEMPERATURE (TC)-OC
Fig.5 -Forward-Current Capabilities ofRCA-1N1763A

and 1N1764A for Operation with Heat Sink at
Case Temperatures from -65C to +1350C.
o
~5 -~ -25 0 25 ~ ~ 100 125 150
FREE-AIR TEMPERATURE (TFA)-OC
a) 3" x 3" Heat Sink. b) 2-1/2" x 2-1/2" Heat Sink.

Figs.6a and 6b -Forward-Current Capabilities of RCA-1N1763A and 1N1764A for Operation with Heat Sinks.
o
'~
"
......
'"
o
~!:1.5
"",
"'",
:.,.
~~
::>"
I
'"
)( 0.5
"'"
o o
-75 -50 -25 0 25 50 75 tOO 125 ISO -75 -50 -25 0 25 50 75 100 125 150
FREE-AIR TEMPERATURE (TFA}-OC FREE-AIR TEMPERATURE (TFA)-OC
e) 1" x 1" Heat Sink.

Figs .6c, 6d, and 6e - Forward-Current Capabi 1 i ties of RCA-1N1763A and 1N1764A for Operat ion wi thHeat Sinks.
TINNERMAN
SPEED CLlP'*
OR
EQUII/ALENT
HEAT SINK SILICONE GREASE

SILICONE GREASE
Registered Trade Mark, Tinnennan Products, Inc., Cleveland I, Ohio.
Fif!o 7 - SUf!f!ested Methods for Attachinf! RCA-IN1763A

IN1764A to Heat Sink
IFREE-AIR TEMPERATURE (TFA)=25 C
ISUPPLY FREQUENCY (CPS)=60 ~:._ --
-. _._::J~'
TYPE
S.b INJ7bJA +
117
IN~C
~gLTS
~AGE
C -r- S~LTfUT
1iiE';'.::E:':-:F.::'?:;:,::n;::::;:-::, -: .. =:-~ _._.
fEE'E:iiF-=--'-f:3'-=-~ _ .. ,,0: --: ... _ .. __-::: ...~ .::-' :~.. ::: ~=
- :;--~ :.1.1...::- 0 _ .
N - ..
~:: - ~; :::g :
,- ==:::::: .._.u
-- .-
: ._:~ -:::: -:::. w
~,;:: .- - '-._~" _ .... - _.: :::: :::: :::,:'
~r.:-:':;:::F:: ~=~~=.. ... __...."
[:.:... .__
:= .._.. " .. ::
==::: _... 0:" .._---.:=,. -::-: .,-- :::-:.. '"
,-'_: .. = ._ :__
~ .. . _I. :
_:... -= :: " N~
~: ~ ... ~..;; :: .::::--- f ' --- ....- ~

i::'t;:::::.- _ ~ " :::::::.....
'J .__ .. --~
g~~: . -:::~-:-
~g
EJ.:?: ._.... :: ::::::-
.:: .. ::: _. :::.~::.= ::.: 0
~t~
~: .. j:'
:::i'=r.:: ~ .....
~ ...~-- ~"":
.. -_. :::-:-~~ ~- ." .-,..- ~:
S' _.... __;:=F~i;:E~=E:-.::~~ IEEF~ ....... ...
f;EE- :r:::_ ~: f',J .. .... . ::".. :if. ::~::
Fig.8 - Typical Operation Characteristics forRG4- Fig.9 - Typical Operat ion Characteristics for RG4-
1N1763A in Half-Wave Rectifier Service. 1N1764A in Half-Wave Rectifier Service.
2 ~ ~ ~ ~
DC OUTPUT VOLTS DC OU T PUT VOLTS
Fig.l0 - Typical Operation Characteristics ofRCA- Fig.ll - Typical Operation Characteristics ofRCA-
lN1763A in Half-Wave Voltage-Doubler Service. lN1764A in Full-Wave Voltage-Doubler Service.
INCHES MilLIMETERS
SYMBOL NOTES
MIN. MAX. MIN. MAX.
,b
b,
0.027 0.035
- 0.125
0.69
-
0.89
3.18 ,
2
,0 0.360 0.400 9.14 10.16

,0, 0.245 0.280 6.22 7.11
,02 - 0.200 - 5.08
F - 0.075 - 1.91
G, - 0.725 - 18.42
K 0.220 0.260 5.59 6.60
L 1.000 1.625 25.40 41.28
a - 0.025 - 0.64
H 05 12.7

2 Diameter to be controlled from free end of lead to
(4.78 mm) dimemion. the diameter may vary to
[Kl(]5LJ[J Rectifiers
Solid State
1N2859A 1N2862A
Division 1N2860A 1N2863A
1N2861A 1N2864A
RCA-1N28S8A, lN2859A, lN2860A, lN2861A,

lN2862A, lN2863A, and lN2864A are hermetically
sealed silicon rectifiers of the diffused-junction
DIFFUSED-JUNCTION
type, designed for use in a variety of applica-
tions in industrial and commercial electronic SILICON RECTIFIERS
equipment.
RCA-1N2858A through lN2864A supersede and are
unilaterally interchangeable with RCA-1N2858 Flanged-Case
through lN2864, respectively. The new rectifiers
incorporate all of the superior performance and Axial-Lead Types For
reliability features which have gained industry
acceptance for their RCA prototypes, and, in ad-
General-Purpose Applications
dition, offer substantially higher dc output-cur-
rent capabilities, lower reverse (leakage)
In Industrial And Commercial
currents, and a wider operating-temperature range. Electronic Equipment
All seven of these new rectifier types have
maximum dc-forward-current ratings of 1 ampere
for resistive or inductive 10ads and 0.75 ampere
for capacitive loads at free-air temperatures up
to 750C (natural convection cooling). They are Features:
also capable of providing dc output currents of
high dc-output-current capabil ity:
up to 2 amperes with capacitive loads when attach-
ed to simple heat sinks.
1 ampere - res ist ive or } to 7Soe
inductive load with natural
3N ampere - capac i t i ve convect ion
RCA-1N2858A through lN2864A differ only in load cooling
peak-reverse-voltage ratings (see Maximum Ratings
to losoe
chart). They are rated for operation at free-air up ~0.2 amperes -capa- with simple
temperatures from _650 to +135C, and utilize cltlve load [ heat sinks
the JEDEC 00-1 flange-type, axial-lead rectifier
package which provides flexibi lity of installation low dynamic reverse current:
in both hand-wired and printed-circuit equipment 0.1 ma max. at sooe
designs. 0.3 ma max. at 7Soe
These new rectifiers, like their RCA proto-
types, are conservatively rated, and incorporate
low dc forward voltage drop:
1.2 volts max. at 2Soe with I ampere
the following design features and special tests
dc forward current
which contribute to their outstanding performance
and reliability: (1) junctions of extremely high wide operating-temperature range:
uniformity produced by a special, precisely con- -6So to +13Soe
trolled diffusion process, (2) rugged internal
mount structure, (3) hermetically sealed cases, hermetically sealed JEOEe 00-1 package
(4) prolonged treatment at high temperatures to
stabilize characteristics, (5) pressure tests of
unilaterally interchangeable with Types
seals for protection against moisture and con-
IN28S8 through IN286~
tamination, (6) tests for forward and reverse specially processed and tested for high
characteristics at 250C, and (7) high-temperature reI iabi I ity and stabi I ity of character-
dynamic tests under full-load conditions. istics
1N2858A-1 N2864A File No. 91
RECTIFIER SERVICE
Absol ute-Maximum Rati ngs, for a SuppLy Frequency of 60 cps:
IN2858A I N2859A IN2860A I N2861 A IN2862A IN2863A I N286'1A
PEAK REVERSE VOLTAGE. 50 100 200 300 400 500 600 max. volts
R'>lS SUPPLY VOLTAGE:

For resistive or inductive loads. 35 70 140 210 280 350 420 max. vol ts
For capacitive loads. 17 35 70 105 140 175 210 max. volts
OC REVERSE (BLOCKING) VOLTAGE 50 100 200 300 400 500 600 max. volts
FORWARDQJRRENT:
For resistive
t
AVERAGE(OC) At TFA r
or
up to 75C.
TFA above 75C.
inductive loads:
See fig.1
1 max. amp
For capaci ti ve loads:

{At TFA up to 75C. 0.75 0.75 0.75 I 0.75 I 0.75 0.75 0.75
~
max. amp
AVERAGE(OC) At TFA above 75C.
See Fip.1
PEAK
RECURRENT
fAt TFA up to 75C.
(At TFA above 75C. . I
See fig.1
5
I ,
max. amp
SURGE, for "turn-anll transient of

2 milliseconds duration:
At TFA up to 75C.
At TFA above 75C.
35
0(
35 35 I
See fig.1
35 35 I 35 35
~
max. amp
SURGE, repetitive, at TFA = 25C:

For one
For more
cycle
suppl y vol tage.

than
of
one
supply
eye Ie
voltage
of
40
0(
40 40
I
See fig.2
40
I 40
I
40 40 max. amp
TEMPERATURERA.NGE(FREE-AIR) I I
Operating -65 to + 135 c
Storage . 0( -65 to + 150 c
Character i s tics:
IN2858A I N2859A I N2860A I N2861 A IN2862A IN2863A IN286'1A
Maximum forward Voltage Drop (IX:)

at IF = 1 Ampere, TFA = 25C. 1.2 1.2 1.2 1.2 1.2 1.2 1.2 vol ts
Maximum Dynamic Reverse Current

(Averaged over 1 Complete Cycle
of Supply Voltage): at Maximum
Rated PRV:
TFA = 50C 0.1 0.1 0.1 0.1 0.1 0.1 0.1 ma
TFA = 75C 0.3 0.3 0.3 0.3 0.3 0.3 0.3 ma
40
-"'"' 35\
'"ffi
Q.
30 '"
'"

'"'"
cr
25
20\
'" I'
iil 15 """
~ ........
r-.
x
10
'" 5
92C513081
Fig.2 - Repetitive Surge Current Rating Chart for
RCA-lN2858A through lN2864A.
DC FORWARD AMPERES = I
. 00 NOT EXCEED MAXIt.4UM PEAK- I
REVERSE ~OLTA~[ R~T1NGI.
I I
'"w

100
FREE-AIR TEMPERATURE (Oel 75
~ ,'-- I---- 'N28b41'

p--
'" ----

10
~
u
~
w
,
:5'" LL 2
~ j59A
IN28bOJ' IN2BbiA IN2Bb2A IN28b3A IN2864A

'" i
, 'fFREE AIR TEMPERATUREfoe =25

0.1 I I I
Q2CS-I0417RI
Fig.3 - Typical DynamicReverse Characteristics for

RCA-1N2858A through lN2864A.
o
-75 -50 -25 0 25 50 75 100 125 150
CASE TEMPERATURE (TC)-OC
o.~ I l.~ 2 2.5
INSTANTANEOUS FORWARD VOLTS I"'F)
92CS-973OR3 Fig.5 - Forward-Current Capab il i ties of RCA-n~858A

Fig.4 - Typical Forward Voltage and Current Char- through lN2864A forOperation with Heat Sink
acteristic for RCA-1N2858A through lN2864A. at Case Temperatures from -650C to +1350C.
..-'
12.5~~
"-0
ZW
10 w>
IE"
co'-'
'-'"
7.5 ~~
~~
5 "
wu>
Q.W
",:5
=>Q.
25)(4 "''''
"'"
o
-75 -50 -25 a 25 50 75 100
o
-75 -50 -25 a 25 50 75 100 125 150
LOAD: CAPACITIVE, RESISTIVE, OR INDUCTIVE

SUPPLY FREQUENCY (CPS)=60
HEAT SINK: ALUMINUM 1/16" THICK, 1-1/2" X 1-1/2"
o
a:
~
......
o
~t! 1.5
"'u>
a:w
wa:
~~ I
",,,,
=>'"
~ 0,5
'"
'" o
-75 -50 -25 a 25 50 75 100 125 150
FREE-AIR TEMPERATURE (TFA)-'-C
Figs.6a, 6b, 6c, 6d, and 6e -Forward-Current Capabilities of RG4-1~2858A through iN2864A
for Operation with Heat Sinks.
T1NNERMAN
SPEED CLlP*
OR
EQUIVALENT
Fig. 7 - Suggested Methods for Attaching RCA-1N2858A

through lN2864A to Heat Sink.
DIMENSIONAL OUTLINE (JEDEC-DO-J)

FOR RCA-IN2858A through JN28~A
,..,
INCHES MILLIMETERS
SYMBOL NOTES
MIN.
0.027
MAX.
0.035
MIN.
0.69
MAX.
0.89 ,
- 0.125 - 3.18 1
,0 0.360 0.400 9.14 10.16
,0, 0.245 0.280 6.22 7.11
,0, - 0.200 - 5.08
F - 0.075 - 1.91
G, - 0.725 - 18.42
K 0.220 0.260 5.59 6.60
L '.000 1.625 25.40 41.28
a - 0.025 - 0.64
H 0.5 - 12.7 -
within 0.188 inch (4.78 mmllrom the point 01
anachment to the body. Within the 0.188 inch
allow for lead finishes and irrt9U1aritiM.
ffilrnLJD 1N5211 1N5213
Rectifiers
1N5216
Solid State
Division 1N5212 1N5214 1N5217
1N5215 1N5218
RCA-IN5211, IN5212, IN5213, IN5214, IN5215,

IN5216, IN5217, and IN5218* are hermetically sealed
silicon rectifiers of the diffused-junction type utilizing
SILICON
small cylindrical metal cases and axial leads.
IN5215, IN5216, IN5217, and IN5218 are insulated
Types
RECTIFIERS
versions of types IN5211, IN5212, IN5213, and IN5214,
respectively. These rectifiers feature dc forward cur-
rent ratings of up to 1 A, a surge-current rating of 50A,
low forward voltage drop, low leakage currents, and an
operating-temperature range of -650C to + 175C. For Industrial and
ConsumerProduct IN5211 IN5215
Applications through
IN5214
through
IN5218
e cylindrical design with axial leads far simple handling e high maximum forward-current ratings - up to 1 ampere
and installatian DC at 7SoC
ecampact, hermetically sealed metal case
(0.405" max. length; 0.240" max. dia.)
etypes lNS21S through lNS218 have transparent, high-

dielectric-strength plastic sleeve over metal case
Maximum Ratings, Absolute-Maximum Values:

For res istive or inductive load For capacitor-input {ilter
INS211 INS212 INS213 INS214 1NS211 INS212 INS213 INS214
INS21S INS216 INS217 INS218 INS21S INS216 lNS217 INS218
PEAK REVERSE VOLTAGE ... 200 400 600 800 200 400 600 800 max. V
RMS SUPPLY VOLTAGE ...... 140 280 420 560 70 140 210 280 max. V
FORWARD CURRENT:
For ambient temperatures up to
75C. For ambient temperatures
above 75C, see Rating Chart.
DC ............... 0.75 0.75 0.75 0.75 0.6 max. A
PEAK RECURRENT ... 6 6 6 5 max. A
SURGE - For "turn-ann- time
of 2 milliseconds ........ 50 50 50 50 max. A
AMBIENT-TEMPERATURE RANGE:
Operating ............ 435 to +175 c
Storage .................. 435 to +175 c
LEAD TEMPERATURE:
For 10 seconds maximum 255 max. c
Characteri stic s:
INS211 INS212 INS213 INS214
INS21S INS216 INS217 INS218
Maximum Instantaneous Forward
Voltage Drop at dc forwarg current
of 1 ampere and TA.s;. 75 C . 1.2 1.2 1.2 1.2 max. V
Maximum Reverse Current:
Dynamic, at TA = 750C** ..... 0.2 0.2 0.2 0.2 max. mA
Static, at TA = 25OC*** ..... . 0.005 0.005 0.005 0.005 max . mA
104~
,
2
I WIOO.
C> 108
00:
0:" 6
,
"''''
;< - 2
~ ~ 80
"-i:' o 102
e
~
"u-
0: 6
~~ 60
~
0:
'
~~ ~ 108
2
'V
"-'" '""
~
6
, ,,;-"'1- :,v
00:
t- t-
zz
ww
uo:
40 Z
'">-
z
2 ","", ;)'
"'0:
w" 20
I~
Q. (J ~ 4
I
'" 0.1
2
I
Fig.2 - Typical Forward Characteristics for Types

lN5211 through lN5218 .
DO NOT EXCEED MAXIMUM PEAK-REVERSE-VOLTAGE RATING.

SOLID-LINE CURVES: DYNAMIC CHARACTERISTICS
MEASURED AT AMBIENT TEMPERATURE:: 75 C AND AT
MAXIMUM DC FORWARD-CURRENT RATING
DASHED-LINE CURVES: STATIC CHARACTERISTICS
MEASURED AT AMBIENT TEMPERATURE :E 25 C
100
8
,
- \~
-z,"
\~
~\~~2\6 ~1l'l5~r- IN5214
2
...-"'- i=="P
~ IN5218
...-...-1--
10
w
'"::i 2
~
0:
If::: l'l~~-z,,--- \l'l~.l\4

81-
~ ;-
-.,,<z:J>" .,'(ll~~Il;~
\l:!.~.l\~,=
1l'l~2 'N~218
I- ~'\.~~~
0.1
Fig.3 - Typical Reverse Characteristics for Types

lN5211 through lN5218.
DIMENSIONAL OUTLINE DIMENSIONAL OUTLINE
for Types 1N5211, lN5212, lN5213, lN5214 for Types lN5215, lN5216, lN5217, lN5218
1.4"
MIN.
r
1.4"
MIN.
POLARITY
SYMBOL
(NOTE 2)
i POLARITY
SYMBOL
(NOTE 2)
i
ANODE
-t 1.4"
MIN.
METAL CASE
WITH
INSULATING
SLEEVE
(NOTE 3)
ANODE
-+ 1.4"
MIN.
LEAD
.033-.039"OIA.
LEAD
.033- .039" DIA . 1
' ~240'
r-MA"x40~"A
GLASS
INSULATION
MAX.OIA.
GLASS
INSULATION
_ I
- G -
I
G
I
~
~
92CS- 14457 O32C5- 14456
NOTE 1: CONNECTED TO METAL CASE.
Insulating Sleeve Dielectric Strength: 2000 Volts Minimum
NOTE 2: ARROW INDICATES DIRECTION OF FORWARD NOTE 1: CONNECTED TO METAL CASE.
(EASY) CURRENT FLOW AS INDICATED BY
DC AMMETER. NOTE 2: ARROW INDICATES DIRECTION OF FORWARD
(EASY) CURRENT FLOW AS INDICATED BY
DC AMMETER.
NOTE 3: INSULATING SLEEVE MAY EXTEND 1/16" BE-
YOND ENDS OF CASE.
TERMINAL DIAGRAM
for Types 1N5211 through lN521B
CATHODE,CASE
1.5-A,50-1000-V
Silicon Rectifiers
Plastic-Packaged, General-Purpose
Types for Low-Power Applications
- High surge-current capability

- Low junction-to-Iead thermal impedances
0
- -65 to + 170 operating temperature range
RCA-l N5391--1 N5399, inclusive, are diffused-junction type Their small size and plastic package of high insulation resis
silicon rectifiers in an axial-lead plastic package. These de- tance make these rectifiers especially suitable for those appli-
vices differ only in their voltage ratings. cations in which high packaging densities are employed.
:g ...
Oi N
'"
M
'" ~ : 1!l '"

~
M M M M M M M'" M
- -
III III
- - - - -
III III III III III III III
Z
-
Z Z
-
Z Z Z Z Z Z
REPETITIVE PEAK- VRRM 50 100 200 300 400 500 600 800 ,000 V
NON-REPETITIVE PEAK'" VRSM 100 200 300 400 525 650 800 1000 1200 V
WORKING PEAK'" VRWM 50 100 200 300 400 500 &Xl 800 1000 V
DC BLOCKING (At TA = '50C) VR 50 100 200 300 400 500 600 800 1000 V
RMS VR(RMS) 35 70 140 210 280 350 420 560 700 V
FORWARD CURRENT:
Single-phase, half-wave operation with SO-Hz sinusoidal voltage

and resistive load, and 1/2-inch leads; for other lead lengths,
see Fig. 1. T A = 70C
PEAK SURGE ..
For one-half cycle of applied voltage, 50 Hz (10 ms) 45

"60 Hz (8.3 ms) 50
400Hz (1.25msl. T = 70C ,00
A
See Fig. 4.
Storage . . -65 to +175

Operating . .............. -65 to +170
"LEAD TEMPERATURE (During Soldering):

Measured 1/8 inch from case for 10 s max.
For single-phase, half-wave sinusoidal pulse of 100-1-5 duration with a repetition rate of 60 pulses per second .
.. for one single-phase, half-wave, GO-Hz sinusoidal pulse with this peak value .
.. Maximum input~voltage rating that can be continuously applied (with the maximum current rating) over the normal operating
temperature range I. For single-phase, half-wave operation with a GO-Hz sinusoidal supply and a resistive load.
In accordance with JEDEC registration format JS-1 RDF-3.
LIMITS
CHARACTERISTIC SYMBOL All Types UNITS
Min. Typ. Max.
Reverse Current:
*Static
For VR = rated value & TJ = 25C
IR
- 0.001 0.01*
mA
For VR= rated value & TJ = 1500e - 0.100 0.3*
*Oynamic
Full'cycle average, for VRWM = rated
IR(AV) - 0.080 0.3* mA
value, 10 = 1.5A, T A = 70C
*Instantaneous Forward-Voltage Drop:
At iF = 1.5A, TA = 70oe, see Fig. 3. vF - 1.1 1.4* V
Reverse-Recovery Time:
At 'FM=30A,pulseduration =3.1IJ.S, TA = 250e
trr - 1.5 - JJS
(See Fig. 7; for other conditions, see Fig. 8.)
*Thermallmpedance:
Steady-State
J unction-to-anode-Iead JLa - - 100 CN/
J u nct io n-to-cathode-I ead JLk - - 100
Anode-Lead } .. - - - 148 CN//in
Cathode.Lead Free convection cooling - 148
- -
Transient
Heat-sink mounting with o-to-1 Y-," leads, and
with a pulse duration of 0.6 s. J-HS(t) - 10 - CN/
For other pulse durations, see Fig. 6.
I-FF~lO~A~D!' R~E~SI~ST0'V,!E'"-:::=:-R=Ftmp:r===m==q:j

CIRCUI,.'SINGlE-PHASE
VRWM - MAX.
--j I
RATING =Ff
1 r:-:- 1--1
I
c( 1.5
I
"
!j \
~ INFINITE
E ("
~
~ HEAT SINK
~
u
o
'" 1.0
*.~".
Y ~
~
/+?...
'So
~~
'~" Fig. 1 - Averageforward-eurrent derating curves for types

fi' 1N5391--1N5399 for several lead lengths.
~ 0.5
""
:5
it
92C5-17311
Fig. 2 - Variation of peak forward-power dissipation with Fig. 3 - Peak forward-voltage drop vs. peak forward current
peak forward current. for types 1N5391-1N5399.
6810 100
SURGE-CURRENT DURATION - HALF CYCLES
92C5-17306
Fig. 4 - Peak-surge (non-repetitive) forward current vs. surge-

current duration for types 1N5391-1 N5399.
-oj 1 1 100
'._" ~
II 1 -?-\~'f
~
~ INFINITE
~ 1
~~
I,I~~
,,~
"~"~rrr11.1/2" 314"
HEAT SINK
~-1 r-., ~ ~ to 1/4" f--
...,
:> ~
~~ /
,~ 0<-
:>x
0:;1; ~
PC BOARD
'"'" ,,"'
~~
.... "
z,
~~
, V --j1 i1!r- =
""Zz
0<0
~B
~
~= INFINITE
HEAT SINK
0.1 I II III
92C5-17310
Fig. 5 - Variation of steady-state thermal resistance with lead Fig. 6 - Variation of transient thermal impedance with pulse
length (for different mounting methods) for types 1N5391-- duration for several lead lengths for types 1N5391--1N5399.
1N5399_
,"IL ~ T'"oC'
I .U
-L~
1------~IO"lo
~-3.I~S-----lt-T
-~ ~R~REC)~
'":>.... 20~
"'-..,
~trr~
>- ""
fr.-tee
+1~
<r
RECT. UNDER TEST 10 OSCILLOSCOPE DISPLAY ON
'"
> 8 TEKTRONIX TYPE 541-A (WITH
TYPE "s" PLUG-IN UNIT 1
6
..!:.:.o
4
~ ~(
~
<r
"'"
2
"-
I
0.1 0.2 0.4 0.6 0.8 I 2 4 6 8 10
RATIO OF REVERSE CURRENT TO FORWARD CURRENT [IRMIREC)/IFM]
92C5-17307
Fig. 7 - Oscilloscope display & test circuit for measurement Fig. 8 . Variation of reverse-recovery time with ratio of re-
of reverse-recovery time. verse-to-forward current for types IN5391--1N5399.
INCHES MilLIMETERS
SYMBOL
MIN. MAX . MIN. MAX.
0.027
0.104
0.035
0.140
0.686
2.64
0.889
3.56
""G 0.230 0.300 5.84 7.62
L
1,
. 1.000
-
-
0.050
25.40
-
-
1.27
OOC05L}O
Solid State
Division
1-A, 50-to-1000-Y
Silicon Rectifiers
Plastic-Packaged, General-Purpose
Types for Low-Power Applications
Low junction-to-Iead thermal impedances
-65 to +1750C operating temperature range
ReA D1201 seriest devices are diffused-junction type silicon tance make these rectifiers especially suited for those appli-
rectifiers in an axial-lead plastic package. These devices differ cations in which high packing densities are desirable.
only in their voltage ratings.
Their small size and plastic package of high insulation resis-

--
I 01201F ' 01201A 012018 '012010 01201M 01201N 01201P
REVERSE VOLTAGE: (44001)' (44002)' (44003" 144004" (44005)' (44006" (44007)'
REPETITIVE PEAK' 50 lOa 200 400 600 800 1000 V

NON-REPETITIVE
PEAK VRSM 100 150 300 525 800 1000 1200 V
WORKING PEAK'" VRWM 50 lOa 200 400 600 800 1000 V
DC BLOCKING VR 50 lOa 200 400 600 800 1000 V
RMS VR(RMS) 35 70 140 280 420 560 700 V
FORWARD CURRENT:
All Types
AVERAGE-RECTIFIED:
10 A
Single-phase, half-wave operation with 60-Hz sinusoidal
voltage and resistive load; with '" leads. TA = 75C
For other lead lengths See Fig.
PEAK-SURGE (NON-REPETITIVE): IFSM
For one-half cvcle of applied voltage. 50 Hz (10 ms) 28 A
60 Hz (8.3 ms) 30 A
400 Hz (1.25 ms) 60 A
For other durations See Fig. 3
TEMPERATURE RANGE:
With l-inch leads & infinite-heat-sink mounting (both leads):
Storage & Operating.
LEAD TEMPERATURE (During Soldering):

Measured 3/8 in. (9.52 mml from case for 10 s max.- .
Number in parentheses is a former ReA type number. .Maximum input voltage that can be continuously applied (with the
, For single-phase. half-wave sinusoidal pulse of 10Q-/Js duration and maximum current rating) over the normal operating-temperature
a repetition rate of 60 pulses per second. range. For single-phase, half-wave operation with a 60-Hz sinusoidal
supply and a resistive load .
For one single-phase, half-wave, 50-Hz sinusoidal pulse with this
peak value. Measured on anode or cathode lead.
LIMITS
Min. Typ. Max.
Reverse Current:
Static
For V R = rated value & TJ = 25C ............................... - - 0.01
mA
IR
For V R = rated value & TJ = 100C .............. - .............. - - 0.05
Dynamic
'R(AV)
Full-cycle average, for VRWM = rated value, 10 = 1 A, TA = 750C ....... - - 0.03 mA
Instantaneous Forward-Voltage Drop:
At iF = 1 A, TJ = 25C, see Fig. 2 ................................ vF - 0.95 1.1 V
Reverse-Recovery Time:
At IFSM = 30 A, pulse duration = 3.1 IlS, T A = 25C, see Fig. 6 ......... trr - 1.5 - IlS
For other conditions .......................................... See Fig. 7

hermal Impedance (Junction-to-Heat Sink):
Steady-State
()J-HS(t)
Heat-sink mounting with 1-inch leads. For other mounting methods - 50 55 C/W
and other lead lengths, see Fig. 4 . . ................... - ..........
Transient
Heat-sink mounting with 0 to 1" leads, and with a pulse duration of ()J-HS(t)
0.3 s. For other pulse durations, see Fig. 5 .. ...................... . - 7.5 - C/W
~?:J'UI~~~:~~~~~
PEAK-R~VERSE
PHASE
WORKING VOLTAGE ~
-11
t'--1 r- 1
>
(VRW",I- "'AX. RATING ~ ,..!!.~b~
.... I 6
-~
I- 1.0 INFINITE 2: 5
Q.
~ HEAT SINK
0
..J
u
0.8
0'" 4
o '""
'~
AMBIENT TEMPERATURE
(TAl'" 2SoC (MAXIMUM) 1/,
........
'"
~ 0.6 0 3 2SC (TYPICAL)
~ ,"Oc
'"
~ 0
'"~
(TYPICAL,\
""'. 0
..
..0.4
'" ~'"
2
~
..
'"~ 0.2
"
~
I
CURRENT WAVEFORM
O~FSM
U-ICYCLE
1 r- C
\%
lr-1 1
'------"
r- ~~
~ ~~~
~'TE INFINITE ~~O
HEAT SINK HEAT (l:INK 0 ~
'~g AMBIENT TEMPERATURE (TA): 25<>C
--- 60
---.L1FSM
I 40
:~.l
IFSM :30~ I _ IRM(REC)
~
~ r--31~'--l t-T
I 10%
...:> 20~
~ trr...- .... '-.... l--- t
rr
>- ""'-
...>'" 10 OSCILLOSCOPE DISPLAY ON
TEKTRONIX TYPE 541 A (WITH
8
TYPE "S" PLUG-IN UNIT)
6
~A/.
4
~ ~(
""'"
~ 2
I
0.1 0.2 0.4 0.6 0.8 I 2 4 6 8 10
RATIO OF REVERSE-lO-FORWARD CURRENT [IRM(RECI/1FSM]
92CS-I1249Rl
INCHES MILLIMETERS
SYMBOL NOTES
MIN. MAX. MIN. MAX.
<pB 0.030 0.034 0.762 0.863 -
<pD 0.133 0.137 3.378 3.479 1
G 0.280 0.285 7.112 7.239 1
L 1.000 - 25.40 - -
L1 - 0.050 - 1.27 2
NOTES
1. Package contour optional within cylinder of diameter, <PO, and length, G.

Slugs, if any, shall be included within this cylinder but shall not be subject to
the minimum limit of o
2. Lead diameter not controlled in this zone to allow for flash, lead-finish
build-up. and minor irregularities other than slugs.
These silicon rectifiers are intended for use in
generator-type power supplies for mobile equipment; in
dc-to-dc converters, power supplies for de motors, trans-
mitters, rf generators, welding equipment, and elec-
troplating systems; in dc-blocking service, magnetic
amplifiers, and in a wide variety of other applications
in industrial equipment.
HALF.WAVE RECTIFIER SERVICE
Absolute-Maximum Ratings for Supply Frequency of 60 cps,
Single-Phase Operat ion, and wi th
PEAK REVERSE
VOLTS.
TRANS I EJVf RE- Available in reverse-polarity versions:
VERSE VOLTS.
NCX'I-REPETI - INI3~IRB, JNI3~2RB, INI3~~RB, INI3~5RB, INJ3~6RB,
TIVE (5 -msec IN J3~7RB, IN 13~8RB
max. duration
and case tem- Designed to meet stringent mechanical and
perature range
of 0 to 2000 C. 100 200 350 450 600 700 800
envi ronmental speci fications
R\lS SUPPLY VOLTS 35 70 140 212 284 355 424 Diffused-junction process -- exceptional uni-
DC RLOCKING formity and stability of characteristics
VOLTS.
AVERAGE FORWARD Hermetic seals Welded construction
AMPERES:
At 1500 Cease Low thermal resistance Low leakage current
temperature ..
At ot.her case Low forward voltage drop JEDEC DO-~ outl ine
tempera tures
High output current:
PEAK RECURREJVf
A\IPERES. up to 15 amperes -- 6 rectifiers in 3-phase,
PEAK SURGE full-wave bridae circuit
AMPERES: a up to 12 amperes - ~ rectifiers in single-
One-half cycle, phase full-wave bridge circuit
sine wave.
RATING CHART
CASE- TEMPERATURE
TYPE OF OPERATION: CASE TEMPERATURE:
RANGE: Operating
A-DIRECT CURRENT
and Storage. B -SINGLE PHASE
C - THREE PHASE
D -SIX PHASE
Character ist i cs:
Max. Forward b
Vol tage Drop
(Volts). ..
Max. Reverse
Currentb(Ma.
Dynami
Static
e ... . . )
a Superimposed on device operating within the maximum volt-
age, current, and temperature ratings and may be repeated
after sufficient time has elapsed for the device to return
b La the presurge thermal-equi librium conditions.
/\vC'rage value for one complete cycle at case temperature of
IS00 C and at maximum rated vol tage and average forward current.
C l'C value, at maximum peak reverse voltage, and case tem-

pf'raturc (oC) = 25.
4-.."'""'~
~
~
DFOC
MICA INSULATOR
=:~:~::;I~=llSHEO
C0
HEATSINK
{CHASSIS'!
e DF3D
~~~.L;>~.;~~Tn~7:'~~Gm~~:~~G
c===== {l.40mmIMAX
THICKNESS~O.055in.
.
V IL ... elEATPvILlSHEO
HAROWAREPRICE5
~
NA59B
CONNECTOR~
~
-
~i~ INSULATOR
....
IL .8LE ...TI'V8lISHEO
..... 'l,. ..8U .. TPUBLISHEO H .. ROW ...REPRICES
H . ROW ..REPRICES 0
@
~ S:::~OCK
NRI09A
WASHER
}
:~~~:.O
~ HEX. NUT

shown with your ReA sates representative or supplier.
DIMENSIONAL OUTLINE
="~.l
JEDEC 00.4
r "i 424
.437"
.424"
NoSfl3.-/' U
Polarity symbol for types Polari ty symbol for types

1N13~18, 1N13~28, 1N13~~8. 1N13~lR8. 1N13~2R8, 1N13~~R8.
1N13~58. 1N13~68. 1N13~78. 1N13~5R8. 1N13~6R8. 1N13~7R8.
and 1N13~88 and 1N13~8R8
Note I: Normal installation torque is 15 to 20 Note 2: Diameter of unthreaded port ion: 0.189"
inch-pounds appl ied to a 10/32 UNF-28 hex nut max., 0.163" min.
assembled on stud thread. The appl ied torque Mote 3: Angular orientation of this terminal is
during installation should not exceed 25 inch- undef j ned.
pounds.
Note~: Thedevice may be operated inany position.
Rectifiers
ffil(]5LJD 1N1200A 1N1204A
Solid State 1N1202A 1N1205A
Division
1N1203A 1N1206A
Used in generator-type power supplies for

mobile equipment; in dc-to-dc converters,
battery chargers, and machine-tool controls;
in power supplies for aircraft, marine, and
missile equipment, for de motors, trans-
mitters, rf generators, welding equipment, and
electroplating systems; in dc-blocking
service, and in a wide variety of other appli-
cations in military and industrial equipment.
HALF-WAVE RECTIFIER SERVICE
Absolute-Maximum Ratings for SuPPly frequency of
60 cps, Single-Phase Operation, and with
PEAK REVERSE
VOLTS ...
TRANSIENT RE-
VERSE VOLTS,
NON -REPETl -
TlVE (5-msec
max. duration
and case tem-
- avai lable in reverse-polarity
INI199-RA, INI200-RA, INI202-RA,
INI20'l-RA, IN 1-205-RA, INI206-RA
versions:
INI203-RA,
~fr 0 ttUof"Z0030n E>

RMS SUPPLY VOLTS
100
35
200
70
350
140
450
212
600
284
700
355
800
424 - designed to meet stringent mil itary mechanical
and environmental specifications
IX: llLOCKING
VOLTS ....
AVERAGE FORWARD
50 100 200 300 400 500 600
- diffused-junction process -- exceptional
formity and stability of characteristics
uni-
AMPERES:
At 1500 Cease
temperature
At other case
. 12 12 12 12 12 12 12 - hermetic
- low thermal
seals
resistance
_ welded construction
_ low leakage current
temperatures. See Fig. low forward voltage drop _ JEDEC DO-'l outl ine
PEAK I1ECUI\I1E~T
AMPEI1ES . 50 I 50 I 501 501 50 I 50 I 50 - high output current:
PE~p~~~~E. up to 30 amperes -- 6 rectifiers in 3-phase,
One-hal f cycle. full-wave bridge circuit
Sine wave .. 240 I 240 I 2401 2401 2401 240 I 240 up to 2'l amperes -- 'l rectifiers in single-
For one or more
than one cycle. See Fig.4 phase full-wave bridge circuit
CASE-TEMPERATURE
RANGE: Operating
and Storage . . -65 to +2000 C
S uperlmpose
. d on deVlce operatIng.. WIt h'In t h e
maximum voltage, current, and temperature ratings
and may be repeated after suffIcient time has
Max. Forward '" elapsed for the device to return to the presurge
Voltage Drop thermal-equilibrium conditions.
(Vol tsl . . .
Max. Reverse
Current (\1a.): Average value for one complete cycle at case tem-
Dynamic .....
perature of 1500 C and at maximum rated voltage
Static ... and average forward current.
Max. Thermal
Resistance,
Junction-to-
Case. . . . .
.. - ...
<1'
~,
NATURAL COOLING. !r>

SINGLE-PHASE OPERATION.
RECTIFIER TYPE IS STUD-MOUNTED DIRECTLY
'to
ON HEAT SINK. ~\ ':.
HEAT SINK: 1/16"-THICK COPPER WITH A MAT
BLACK SURFACE AND THERMAL EMISSIVITY
OF 0.9.
50 100 150 200

INCOMING-AIR TEMPERATURE-C
10 92CM-1I067RI
~. ~'t:!~
~~'t~, Fig.3 - Operation Guidance Chart for all
~~ Types and corresponding reverse-
polarity versions.
SUPPLY FREQUENCY-60 CPS SINE WAVE

CASE TEMPERATURE-ISO C
RESISTIVE OR INDUCTIVE LOAD.
RMS SUPPLY VOLTAGE MAXIMUM-RATED VALUE
AVERAGE FORWARD CURRENT-MAXIMUM-RATED VALl.
2SO
"'- ""-
......
"~
200
"'-
or"
~~ ISO "'-
~~ "'-
~~ 100
2
"'- '-..
xQ.
.,:>
~<t 50
~
2 4 , 2 4 ,
Fig.2 - Operation Guidance Chart for all Fig.4 - Peak-Surge-Current Rat ing Chart for
Types and corresponding reverse- all Types and corresponding reverse-
polarity versions. polarity versions.
FOR DC ~;E~_~~~~l.gS;E:.M;~~.T~~~Y~ ~~.~T;~~7:~~8f::
rmn~ ... : .::: j : : : J: .:..
. ~I.;;, ...........1:. ~
~
Ill!. : :.1:.'.
'"w~ 2.5
~ L4~~ : . : "'~' .'." .:: .
~
~
~ .;; ..'K .... .... ." i " 2
~
w
2 1.3 ~~i;E+ :! K. ::::: j::::::

'I:'T '"
w
~ 1.5
~
:E
::f; :~.l ";".
1.2 ...
~ .. I:l .. ~
~ ii:t:1 .. ::.: :&:: ... 8 I
~ t~~ .. 1 .:1: :!~:1~ , ,.,: : I ~

;:, \.1'---
u ... > :; :::: ;~ ~ O.5.~
111ill;~i : .,': 'ii!

o BO 100 120
Fig,5 - Current-Multiplying-Factor Chart for Fig.7 - Typical Reverse C1aracterist ics for
Polyphase andDC operation for all Types and all Types and corres?cndir.g reverse-
corresponding reverse-polarity versions. polarity versions.
~''''"'''"
DFGC
~ MICAfNSULATOR
~ :::~:~::;,:~:lISHEO
Q
HEATSINK
{CHASSIS}
e OFJO
~~6.L~~_;;~~n~~:'~~Gm~~:~~G
e;::-------- :::~:~:~~~:Lt~ED
t:===== THICKNESS -0.055'n.
NR59B
CONNECTOR~
fO'--- ~~~ -
INSULATOR
V".L ..UATPV8LISHEO
AVAIlA8lE AT PVIlISHEO HAflOWAFlE PRICES
HA,flOW"AE,.".,CES 0
Fig,6 - Typical Forward Characteristics for
all Types and corresponding reverse-
polarity versions.
@ ~:~~~CKWASHER} SVPPllEO
~ NA38C :~:~CE.
~ HEX.NUT

Fig.8 - Sugges ted Moun t ing Arrangemen t,
Because these rectifiers may operate at volt- per rectifier cell for polyphase operation and
ages which are dangerous, care should be taken in dc operation. The procedure for the use of
the design of equipment to prevent the operator Fig.5 is as follows:
from coming in contact with the rectifier.
Step. I: . From Fig.5 determine the current-
The recommended installation torque is 15 to
multipl Ylng factor for the app licable conduction
20 inch-pounds applied to a 10/32 UNF'-2B hex nut
assembled on stud thread. angle. (For dc operation use current multi-
plYing factor of 0.8.)
The applied torque during installation should
not exceed 25 inch-pounds. Step 2: Divide the required load current in
amperes by the number of rectifier circuit
Use of Rat i ng Charts and Ope rat i on Gu i dance Chart.
branches - as shown in the following Table -
Fig.5 is used in conjunction with Fig.2 and to determine average forward amperes per recti-
Fig. 3 to determine maximum average forward amperes fier cell.
Type of Operation Ho. of Circuit Branches DIMENSIONAL OUTLINE
Single-Phase, Full- JEDEC 00-4
Wave:
Center-Tapped 2 r~~~'~
Bridge
Three -Phase:
Wye
lliuble Wye
2
3
6
-"~e... ..t"
SEE
INOTE :3 ----
/'
. .. .......
..
If
~
.424'1
I
Bridge 3
Six-Phase Star 6
Step 3: Multiply average forward amperes

established in Step 2 by the current-multiplying
factor established in Step 1 to determine
adjusted average forward amperes per rectifier
cell, for use with Fig.2 or Fig. 3.
Step~: Using the product obtained in Step 3.
determine from Fig.2 or Fig.3 either (a) the
maximum allowable incoming-air temperature or
ambient temperature for a given heat-sink size,
or (b) the minimum heat-sink size for a given
incoming-air temperature or ambient temperature.
Example .t. Polarity symbol for types

lNl199-A. lN1200-A.
Cond it ions: lN1202-A. lN1203-A.
lN1204-A. IN1205-A. and
(a) Three-phase, half-wave (wye) operation, coo- lN1206-A.
duction angle = 1200
Polari ty symbol for types
(b) Desired output current = 30 amperes lNl199-RA. lN1200-RA.
lN1202-RA. lN1203-RA.
(c) Forced-air cooling; incoming-air tempera- lN1204-RA. lN1205-RA.
ture = 900 C and IN1206-RA.
Problem:
Determine mlnlmum heat-sink Slze. Hote I: Normal installation torque is 15 to 20
inch-pounds appl ied to a 10/32 UNF-2B hex nut
assembled on stud thread. The appl ied torque
Procedure: duri ng j nstallat jn,.., :-=:t')c ld not exceed 25 i nch-
Step 1: From Fig. 5, the current mul tipl ying pounds.
factor for a conduction angle of 1200 is Hate 2: Diameter of unthreaded port ion: 0.189"
1.18. max., 0.16)" min.
Step 2: For three-phase half-wave operation Hote 3: Angular orientation of this terminal is
the number of rectifier circuit branches is undefined.
three. The average forward current through Hote~: Thedevice maybeoperated inany position.
each rectifier cell is, therefore, 30/3,
or 10 amperes.
Step 3: Multiplying average forward amperes
(10) obtained in Step 2 by the current-
multiplying factor (1.18) obtained in Step 1
yields 11.8 adjusted forward amperes.
Step 4: From Fig.3, for forced-air cooling.
the minimum heat-sink size for the conditions
shown is 2-1/2" x 2-1/2".
Rectifiers
OO(]5LJ[] 1N249C 1N1196A
Solid State 1N25OC 1N1197A
Division
1N1195A 1N1198A
Appl icat ions:

In power supplies for mobile equipment,
dc-to-dc converters, battery chargers,
dynamic braking system~, aircraft and
missile power supplies, high-power trans-
mitter and rf-generator power supplies,
machine-tool controls, dc-motor power
supplies, and in other heavy-duty in-
dustrial and military equipment.
HALF-WAVE RECTIFIER SERVICE
Maximum Ratings:
Absolute-Maximum Values for SUPPly frequency of
60cps, Single-Phase Operation, and with
Resistive or Inductive Load available in reverse-polarity versions:
IN2~8-RC, IN2~9-RC, IN250-RC, INI195-RA,
IN 1196-RA, INI197-RA, INII98-RA
designed to meet stringent military mechani-
cal and environmental specifications
PEAK INVERSE
VOLTS ..
RMS SUPPLY
55 110 220 :!OO 400 500 600 diffused-junction process -- exceptional unl-
formity of characteristics
VOLTS . . 39 77 154 212 284 355 424
DC BLOCKING
VOLTS .. 50 100 200 300 400 500 600
hermetic seaIs welded construction
FORWARD
AMPERES:
low thermal res istance low leakage current
Average DC: low forward va ltage drop J EoEC 00-5 outl ine
At
case
1500 C
tern high output current: UP to
perature. 20 20 20 20 20 20 20 8~ amperes -- 6 rectifiers in 3-phase,
At other full-wave bridge circuit
temperatures See Rating Chart
PEAK RECURRENT 60 amperes -- ~ rectifiers in slngre-
AMPERES . 90 1 90 I 90 1 901 90 I 90 I 90
PEAK SURGE
phase full-wave bridge circuit
AMPERES:.
(One-half
cycle, sine
wave) 350 1350 1 350 1 350 1 350 1 350 I 350
(For more
than one
cycle). See Rating Chart IV
CASE TEMPERA-
TURE:
t i ng
Ope ra
and Storage -65 to +1750 C
Characteristics at 1500 C Case Temperature

Max. Forwa I'd
Vol tage Drop.
(Volts) 0.6 10.6 10.6 10.6 I 0.6 I 0.6 1 0.6
Max. Reve rse
Currente
(Ma.) ... 3.813.613.413.212.512.211.5
Superimposed on device operating within the
maximum specified voltage, current, and temper-
ature ratings and may be repeated after suf-
ficient time has elapsed for the device to
return to the presurge thermal equilibrium Fif 1 - Rattnf Chart 1 for Types IN248-C,
conditions 1N249-C. IN250-C. INl195-A. INl196-A.
At ma~imum peak inverse voltage, average for-
ward amperes = 20, and averaged over one com-
INl197-A, INl198-A. and correspondinf
plete cycle. reverse-polarity versions.
OF 0.9,
INCOMNG-AIR
IN SPACE
ttLACt\ 5URFAC~ ANO
FROM EM,ss'V'1Tilllllll
TEMPERATURE: MEASUREO AT A POINT
!4. AWAY T..-E CASE AND
THt.RMAL
!4" BElDW THE HEAT SINK.
2.
::la:
..'"
~ 20
.~
c
a:
a:
~
.'15" "
u i?',
.
'"
u
15
~ ~
'"
:>
'0 '"i 10
.'"" .
X
'" '"
92CM-I0741 92CM-I074!t
Fi~. 2 - Hatin! Chart II for Types iN248-C. Fi~. 3 - Hatin~ Chart III for Types IN248-C.
1N249-C. IN250-C. INl195-A. INl196-A. 1N249-C. IN250-C. INl195-A. INl196-A.
INl197-A. INl198-A. and correspondin~ INl197-A. INl198-A. and correspondin~
reverse-polarity versions. reverse-polarity versions.
SUPP\..Y fREQUENCY;:::60 CPS SINE WAVE

CASE. TEMPERATURE =1.~C
RESlSTIV[ OR INDUCTIVE LOAD
RMS SUPPLY VOLTAGE =h4AXIMUM RATED VALUE
DC OUTPUT CURRENT=MA,)(IUUU RATED VALUE
400
~d \ '\.. 300
-
~
~3
-
.......
~~2oo
~:J "-
",15
~~
", . 100
9ZCS-I090Q
Fi~.4 -Hatin! Chart IV for Types IN248-C.
1N249-C. IN250-C. INl195-A. INl196-A. Fi!.5 - Chart V for Types IN248-C. 1N249-C.
INl197-A. INl198-A. and correspondin~ IN250-C. INl195-A. IN1196-A. IN1197-A
reverse-polarity versions. INl198-A. and correspondin! reverse-
polarity versions.
Fif!.6 - TYPical Forward Charactenstics Fif!.7 - TYPical Reverse Charactenstics
for Types IN248-C, 1N249-C. 1N250-C. for Types IN248-C, 1N249-C, IN250-C.
INl195-A. INl196-A, INl197-A, 1Nl198-A, and INl195-A, INl196-A, INl197-A, INl198-A. and
correspondinf! reverse-polarity verSions. correspondinf! reverse-polarity versions.
Because these recti fiers may operate at vol t- justed average forward amperes per rectifier
ages which are dangerous, care should be taken in element, for use with Rating O1art II or Rating
the design of equipment to prevent the operator O1art III.
from coming in contact wi th the recti fier.
The recommended installation torque is 26 to Step ~: Using the product obtained in Step 3,
36 inch-pounds applied to a 1/4-28 lNF-2A hex nut determine from Rating Chart II or Rating O1art
assembled on thread. III either (a) the maximum allowable incoming-
air temperature or ambient temperature for a
The appl ied torque during installation should
not exceed 75 inch-pounds. given heat-sink size, or (b) the minimum heat-
sink size for a given incoming-air temperature
Use of Rating Charts or ambient temperature.
O1art V is used in conj unction wi th Rating
O1arts II and III to determine maximum average
forward amp~res per recti fier uni t for polyphase
operation and dc operation. The procedure for Cond itions:
the use of O1art V is as follows: (a) Three-phase, half-wave operation; con-
duction angle = 1200
Step I: From Chart V determine the current-
multiplying factor for the applicable conduction (b) Desired output cur~ent = 45 amperes
angle. (For dc operation use current multi- (c) Forced-air cooling; incoming-air temper-
plying factor of 0.8.) ature = 900 C
Step 2: [nvide the required load current in Problem:
amperes by the number of rectifier circuit Determine minimum heat-sink Size.
branches -- as shown in the following Table --
to determine average forward amperes per recti-
fier element. Procedure:
Step 1: From O1art V, the current multiplying
Type of Operation No. of Circuit Branches
factor for a conduction angle of 1200 is 1.18.
Si~gle-Phase, Full-
wave: Step 2: For three-phase half-wave operation
Center-Tapped 2 the number of rectifier circuit branches is
Sri e 2 three. The average forward current through
ree- ase: each rectifier element is, therefore, 45/3,
Wye 3 or 15 amperes.
Double Wye 6 Step 3: Multiplying average forward amperes
Bri e 6 05) obtained in Step 2 by the current multi-
lX- ase tar pI ying factor (1.18) obtained in Step 1 yields
17.7 adjusted average forward amperes.
Step 3: Multiply average forward amperes es- Step 4: From Rating Chart III, for forced-
tablished in Step 2 by the current multiplying air cooling, the minimum heat-sink size for
factor establ ished in Step 1 to determine ad- the conditions shown in Step 3 is 3" x 3".
DIMENSIONAL OUTLINE
J EOEC 00-5
.140' MIN.
.I7S" MAX.
CIA.
HOLE
Pol ar i ty symbol for types * Polarity symbol for types

lN2~B-C. lN2~9-C. lN250-C. lN2~B-RC. lN2~9-RC. lN250-RC.
lN1195-A. lN1196-A. lNl197-A. lNl195-RA. lN1196-RA. 1~1197-RA.
and lN119B-A. and lNl19B-RA.
NOTE 2: ANGULAR ORIENTATION OF THIS TERMINAL UNDEFINED.

NOTE 3: DEVICE CAN BE USED IN ANY POSITION.
[Jla3LJO
Solid State 1N1183A 1N1184A
Division
1N1186A-1N1190A
40-Ampere Silicon Rectifiers

Stud-Mounted Types for I ndustrial and Military Power Supplies
Features:
_ Low thermal resistance - Welded construction
_ Low forward voltage drop - Low leakage current
_ High output current: - JEDEC DO-5 Outline
up to 160 amperes - 6 rectifiers in 3-phase, full-wave bridge circuit
up to 120 amperes - 4 rectifiers in single-phase, full-wave bridge circuit
Available in reverse-polarity versions:
1N1183RA, 1N1184RA, 1N1186RA, 1N1187RA, 1N1188RA, 1N1189RA,
1N1190RA
- Extra-high-strength zirconium-alloy mounting stud - withstands installation
torque of up to 50 inch-pounds
- Designed to meet stringent military mechanical and environmental
specifications.
RCA-1N1183A, lNl184A, lN1186A, lNl187A. lNl188A. - Diffusedjunction process - exceptional uniformity and
1Nl189A, and 1Nl190A are 40ampere, diffused-junction stability of characteristics
silicon rectifiers suitable for use in generatortype power Hermetic seals
supplies for mobile electrical and electronic equipment, in
dc-to-dc converters and battery chargers, and in power These rectifiers are conservatively rated to permit continuous
supplies for aircraft, marine, and missile equipment. trans operation at maximum ratings in applications requiring high
mitters, and rf generators. They are also extremely useful in reliability under severe operating conditions. In addition,
power supplies for de motors, in welding and electroplating they utilize a special zirconium-alloy mounting stud which
equipment. in dc-blocking applications, in magnetic ampli- can withstand installation torques of up to 50 inch-pounds -
fiers, and in a wide variety of other applications in a feature of significant value in applications involving
heavy-duty industrial and military equipment. mechanical shock and vibration.
lNl183A lNll84A lN1186A lN1187A lNl188A lNl189A lNll90A

PEAK REVERSE VOLTS .............. 50 100 200 300 400 500 600
RMS SUPPLY VOLTS ..................... 35 70 140 212 284 355 424
DC BLOCKING VOLTS .................... 50 100 200 300 400 500 600
AVERAGE FORWARD AMPERES:
At 1 SOOC case temperature ...............
At other case temperatures ................
40
See Fig. 1
~
~
PEAK SURGE AMPERES:'
One-half cycle, sine wave ................. 800 ~
For more than one cycle ................. See Fig. 5
~
PEAK RECURRENT AMPERES ............
CASE TEMPERATURE RANGE:
195
Operating and storage ....................

Characteristics:
-65 to +2000C

Max. Forward Voltage Drop (Volts)b ...........
Max. Reverse Current (mAl: 0.65

~nami~ ........................ 2.5 2.5 2.5 2.5 2.2 2 1.8
StaticC ............................... 0.015 ~
Max. Thermal Resistance,
Junctionto-Case ........................
a Superimposed on device operating within the maximum specified

IC/W ~
b Average value for one complete cycle, at maximum peak reverse
voltage, current, and temperature ratings and may be repeated after voltage, maximum average forward amperes = 40, and case
sufficient time has elapsed for the device to return to the presurge temperature (OCI = '50.
thermal--equilibrium conditions. C DC value, at maximum peak reverse voltage and case temperature
(OCI = 25.
FORCED-AIR COOLING:AR VELOCITY"~I SINGLE-PHASE OPERATION.
1000 FEET PER MINUTE PARALLEL RECTIFIER TYPE IS STUD-
TO PLANE OF HEAT SlM<. MOUNTED OfiECTLY ON HEAT SN<.
4 HEAT SlNK:1/16--THICK COPPER
WITH A MAT BLACK SURFACE
AM> THERMAL EMISSIVITY OF 0.9.
tNCOttlNG-AIR TEMPERATURE;
JlEASURED AT A POINT IN SPACE
1/4- AWAY FROM THE CASE ANO
114- BELOW THE HEAT SIM(.
SUPPLY F"REOUENCY:60 CPS SINE WAVE CASE TEMPERATURE:150o C
RESISTIVE OR INDUCTIVE LOAD.
RMS SUPPLY VOLTAGE:MAXIMUM-RATED VALUE
AvERAGE FQRWARD CURRENT~MAXIMUM-RATED VALUE
800
~~
~~
600
\
""
~" .. ~"~
,u
~'" ~ ~ ~i~~INSULATOR
~~
~~
400
I
----...
-- ---
~ :::~::;':I~~:LISHEO
2'"
~i
:I:<J: 200
~!~~~~;~;~:?:.,o
GJ
--0 0----
DF3H
{~~~~~~~K
TEFLON'
0.0.0.315
THICKNESS
A.A'CA"'''M''~'O
INSULATING
on. (B.OOmmt
BUSHING
= 0.062 in. (1.53 mml MAX.
"..~...~"" ~
~~:~CTOR~-
AVAILA8LEArf'U81.ISHEO
HAROWAREPRICES ~. NR110A }
~ LOCK WASHER ~LIEU
~
~
NA388
HEX. NUT
:::CE
~ tOO
~ 80 shown with your ReA salesrepresentative or supplier.
a
'"
!
e
92CS-1I340
Fig.6- Typical forward characteristics for all types and corres*

ponding reverse-polarity versions.
INCHES MILLIMETERS
SYMBOL MIN. MAX MIN MAX, NOTES
- -
A
b -
0.450
0.375 -
11.43
9.52
,
0.030 0.080 0.77 2.03
.0 - 0.794 - 20.16
.0, - 0.667 - 16.94
E 0.669 0.688 17.00 17.47

,
"
J
0.115
0.750
0.200
1.000
2.93
19.05
5.08
25.40
.M 0.220 0.249 5.59 6.32

N 0.422 0.453 10.72 11.50
N, - 0.090 - 2.28
S 0.156 - 3.97 -
.T 3.56 4.44
.w, 0.140
1/4-28
0.175
UNF 2A 114.'1' UN' 'A 3
- I 0.002 - 0.050
" - 0.006 - 0.152
NOTES:
1: Ch"mfer Ofundercut on one or both 1100 of hex.n,,! bMe il

optionlil.
2: Angullll"o""en~tion.nd contour of Tetminal No.1 Iloption.1.
3: oW il p'lch diilt1leterof coated threads. REF: ScrewThrell!d
St"nd"rds lor Feder,,1Services, HlOdbook H 28 Part I.
Recommended torqu.: 30 inch-poundl.
OOcn5LJD
Solid State
lN3255
Rectifiers
Division lN3193 lN3195 lN3253 lN3256

lN3194 lN3196 lN3254 lN3563
Diffused Junction
Silicon Rectifiers
For Industrial and Consumer-Product Applications
Features:
Cylindrical design with axial leads for simple handling and installation
Compact, hermetically sealed metal case (0.405" max. length;
0.240" max. dia.)
Insulated types 1N3253, 1N3254, 1N3255, 1N3256, and 1N3563
have transparent, high-dielectric-strength plastic sleeve over metal
case
RCA-1N3193, lN3194, lN3195, lN3196, lN3253, lN3254, High maximum forward-current ratings - up to 750 milli-
1N3255, 1N3256, and 1N3563 are hermetically sealed silicon amperes at 75 c
rectifiers of the diffused-junction type utilizing small cylin- Peak-reverse-voltage ratings - 200 to 1000 volts
drical metal cases and axial leads. Types 1N3253, 1N3254,
Maximum free-air operating temperature - 100 c
1N3255, and 1N3256 are insu lated versions of types 1N3193,
Designed to meet stringent temperature-cycling and
lN3194, and lN3196, respectively. Type lN3563 is an
humidity requirements of critical industrial and con-
insulated rectifier which does not have an uninsulated
sumer-product applications
equivalent.
RECTIFIER SERVICE (For a supply-line frequency of 60 cps)
For resistive or inductive load For capacitor;nput filter
1N3193 1N3194 1N3195 1N3196 1N3193 1N3194 1N3195 1N3196
1N3563 1N3563
1N3253 1N3254 1N3255 1N3256 1N3253 1N3254 1N3255 1N3256
PEAK REVERSE VOLTAGE 200 400 600 800 1000 200 400 600 800 1000 volts
RMSSUPPLY VOLTAGE . 140 280 420 560 700 70 140 210 280 350 volts
FORWARD CURRENT:
For free-air temperatures up to
75C. For free-air temperatures
above 75C, see Rating Chart.
DC . 400 500 500 500 400 300 ma
PEAK RECURRENT . 6 6 6 5 4 amp
SURGE - For "turn-on" time
of 2 milliseconds . 35 35 35 35 35 amp
FREE-AiR-TEMPERATURE RANGE:
Operating. . . . . . . .. . . -65 to +100 C
Storage . -65 to +175 C
LEAD TEMPERATURE:
For 10 seconds maximum . 255 C
Characteristics, At a Free-Air Temperature of 2SOC:
1N3195 1N3196
1N3563
1N3255 1N3256
Maximum Instantaneous Forward
Voltage Drop at dc forward current
of 0.5 ampere . 1.2 1.2 1.2 volts
Maximum Reverse Current:
Dynamic, at TFA = 750C" . 0.2 0.2 0.2 ma
Static, at TFA = 250C** . 0.005 0.005 0.005 ma
DO NOT EXCEED MAXIMUM PEAK-REVERSE-VOLTAGE RATING.
SOLID-LINE OJRVES: DYNAMIC CHARACTERISTICS
MEASURED AT FREE-AIR TEMPERATURE.75- C AND AT
MAXIMUM DC FORWARD-CURREHT RATING
DASHED LINE CURVES: STATIC CHARACTERISTICS
MEASURED AT FREE-AIR TEMPERATURE" 25- C

'00
c9,q'.>
\t\:!>'l.t;)"!>
, II-
~II,'.>Z~4 ~",~~ IN'3196
V IN'3256
IN~63
V

'0
92CS-I0919RJ
FigA- Typical operation characteristics of types 1N3194 and 1N3254

in fullwave voltagedoubler service.

, . :,
TYPE
Jj
:1
,
I 56 IN3194~I,N3254
r, +
+~
-.:j
~;1~~ \tl3\96 DC

-,~~~.,"'}- \~~~- C
'ii~~"~ 1,,!t>6'.>
~~ ::- I"~;-~ I"
c.
OUTPUT
VOLTAGE ~
.!
, r-
i
~
I
TYPE - j.:
IN3194,IN3254 _ . . .'
. --F-cf-~
, ...... .<C.25()~FD
. :100
0.1
'"~
0
160
>
I-
:>
a. 140
t;
0
u
0
120
9ZCS -I0915RI
Fig.8- Typical operation characteristics of types 1N3196 and

1N3256 in half-wave rectifier service.
CATHODE
LEAD 1.4 (35.6)
MIN. 1.4 (35.6)
(NOTE I)
MIN.
i METAL CASE
i
WITH
INSULATING
SLEEVE
(NOTE 3)
' 10.24016.,01
MAX. DIA.
GLASS
iNSULATION
0135 (3.43) (2 LEADS)
0.139( 353) DJA 0021 (0.686)
0035(0.889) DIA
(2 LEADS)
0.021 (0.686)
0035 (0.889) DtA ~
92CS-11229R3

NOTE 2: ARROW INDICATES DIRECTION OF FORWARD (EASY)
NOTE 2: ARROW INDICATED DIRECTION OF FORWARD (EASY)
CURRENT FLOW AS INDICATED BY DC AMMETER.
CURRENT FLOW AS INDICATED BY DC AMMETER.
NOTE 3: INSULATOR SLEEVE MAY EXTEND 1/16" BEYOND
ENDS OF CASE.
Material: Plastic
Wall Thickness: 0.002"
Dielectric Strength: 4500 volts/mil at 2SoC
3150 volts/mil at 150C
Moisture Absorption: 0.3%
Surface resistivity is not
affected by moisture.
Degree of Transparency: Optically clear
DDJ]3LJD Thyristors/ Rectifiers
Solid State 537025F 021015
Division 537035F 021035
021035F
Horizontial- Deflection
SeR's and Rectifiers
1 For 1100 Large-Screen Color TV

Features:
*
R
Operation from supply voltages between 150 and 270 V (nominal).
Ability to handle high beam current; average 1.6 mA de.
Ability to supply as much as 7 mJ of stored energy to the de-
flection yoke, which is sufficient for 29 mm-neck picture tubes,
as well as 36.5 mm-neck tubes, both operated at 25 kV (nominal
021015 value!.
021035
021035F Highly reliable circuit which can also be used as a low-voltage
power supply.
These ReA types are designed for use in a horizontal output The silicon rectifier D2101S (40892)* may be used as a
circuit such as that shown in Fig. 1. clamp to protect the circuit components from excessively
high transient voltages which may be generated as a result of
The silicon controlled rectifier S3703SF (40888) * and the
arcing in the picture tube or in a high-voltage rectifier tube.
silicon rectifier D2103SF (40890)* are designed to act as a
bipolar switch that controls horizontal yoke current during
the beam trace interval. To initiate trace-retrace switching To facilitate direct connection across each silicon controlled
and control yoke current during retrace. the silicon controlled rectifier, S3702SF and S3703SF, the anode connections of
rectifier S3702SF (40889) * and the silicon rectifier D21 03S silicon rectifiers D2103S and D2103SF are reversed as
(40891) * act as the commutating switch. compared to that of a normal power-supply rectifier diode.
HIGH-VOLTAGE
TRANSFORMER
,....~---,
I
COMMUTATING
SWITCH
r----, TRACE
I
, J, CA
S3703SF
;-S~~~H I
I
Ly
--.. I
I I
I
For a description of the operation of SeA deflection systems see ReA Application Note AN-3780.
"A New Horizontal Deflection System Using S3705M and S3706M Silicon Controlled Rectifiers";
ST3871; "An SeR Horizontal-SawtoothCurrent and High-Voltage Generator for Magnetically
Deflected Picture Tubes"; ST-3835, "Switching-Device Requirements for a New HorizontalOeflection
System".
TRACE SCR COMMUTATING SCR
SILICON CONTROLLED RECTIFIERS S3703SF S37U2SF
NonRepetitive Peak Off-State Voltage:

Gate open . VOSOM BOO 750' . V
Repetitive Peak Off-State Voltage:
Gate open ............................................. VOROM
=
T C BOoC .................................... 750 700 V
Gate open . VRROM 25 25 V
On-State Current:
T C :: 60cC. 50 Hz sine wave, conduction angle = 180:
Average DC . ITIAV) 3.2 3.2 A
RMS . ................... ITlRMS) 5 5 A
For one cycle of applied voltage. 50 Hz ................... ITSM 50 50 A
Critical Rate of Rise of On-State Current:
For V o =
VOROM rated value, IGT =
50 mA, 0.1 J.iS rise time ... di/dt 200 200 A/J.iS
Gate Power Dissipatione;
Peak (forward or reversel for 10 J1s duration, max. reverse
gate bias = -35 V . PGM 25 25 W
Temperature Range-;
Storage ............................................ Tstg -40 to 150 DC
Operating (easel . T c -40 to BO c
*Protection against transients above this value must be provided. Transients generated by arcing may persist for as long as 10 cycles.
-Any product of gate current and gate voltage which results in a gate power less than the maximum is permitted.
-remperature measurement point is shown on the DIMENSIONAL OUTLINE.
ELECTRICAL CHARACTERISTICS, At Maximum Ratings and at Indicated Case Temperature (T C)

SILICON CONTROLLEO RECTIFIERS
LIMITS
CHARACTERISTIC SYMBOL S3703SF S3702SF UNITS
TYP. MAX. TYP. MAX.

Gate open, VOO '" Rated VOROM IDOM
TC "'S50C . . . ..... .
. . . . . . . . . . . ... 0.5 1.5 0.5 1.5 mA

iT'" 20 A TC '" 25C . ...... .............. vT 2.2 3 2.2 3 V
OC Gate Trigger Current:

TC::: 25C . . . . . . . . . .
. . . . . . . . .... .... .... .... 'GT 15 40 15 45 mA

TC::: 25C ..... ............ ................ VGT 1.8 4 1.8 4 V
Critical Rate-of Rise of Off-State Voltage:

TC . 70C ..- ....... .. . ....... ........ .... . .... dv/dt 700lMIN.lA 700 IMIN.lA VII'S
Circuit-Commutated Turn-Qff Time t:

TC '" 70C, Minimum negative bias
dunng turn-off time = -20 V (S3703SF)
and -2.5 V IS3702SF)
Rate of Reapplied Voltage (dv/dt) = 175 VIlls. .. .... ..... tq - 2.4 - - !Js
Rate of Reapplied Voltage (dv/dtl '" 400 V/lls .. ........ - - - 4.2 !Js
Thermal Resistance:
Junction-to-Case ................................... ROJC - 4 - 4 CIW
.& Up to 500 V max. See Fig. 3.

This parameter, the sum of reverse recovery time and gate recovery time, is measured from the zero crossing of current to the stan of the
\/YOrst conditions (high line, zero-beam, off-frequency, minimum auxiliary load, etc.). turn-off time must not fall below the given values.
Turn-off time increases with temperature; therefore, case temperature must not exceed 70 o See Figs. 2 & 3. e.
'i:~~..l'I/I'I;??
021015
REVERSE VOLTAGE"":
Nonrepetitive peak ................................. 700 V
Repetitive peak ...................................... 800 V
FORWARD CURRENT:
RMS ............................................
Peak-surge (nonrepetitive) ..............................
3--
70
p'
30
A
A
Peak (repetitive) ..................................... 12 0.5 A
TEMPERATURE RANGE:
Storage ............................................ T5tg c
Operating ICase) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. TC c
LEAD TEMPERATURE :
For 10s maximum .............................. , TL c
** For ambient temperatures up to 45C .

For a maximum of 3 pulses, 10}J.s in duration, during any 64 /.Is period .
Maximum current rating applies only if the rectifier is properly mounted to maintain junction temperature below 150C. See Fig. 4 .
At distances no closer to rectifier body than points A and B on outline drawing.
SILICON RECTIFIERS
MAXIMUM LIMITS
CHARACTERISTIC SYMBOL D2103S 021015 UNITS

D2103SF
Reverse Current:
Static
For VRRM = max. rated value, IF = 0, T C= 25C ... ....... 10 - IJA
'RM
For V R = 500 V, T C = 100C ..... ..................... 250 -

At 'F = 4 A, T A = 75C .......... . . . . . . .. . . . . . . ....... vF 1.4 1.5 V
IFM = 3.14 A, % sinewave, -di/dt = -10 A/p.s, trr 0.5 0.7 IJs
pulse duration = 0.94 ps, T C = 25C .. . .. . . . . . ... . .. .. . . .
~--r I 6A
:~
r---25/J-s-----l ~2.4/J-s
I I II
~ r--"
"I,I
~IO/J-$-;tq to-- : :~P'::'&~D
t75V//J-s +H' I
t: I dv/dt
t 400V//J-s
REAPPLIED j I I I REAPPLIED
dv/dt 1 I 1 I'dv/dt,
II'
II
IBOv __
MAX.
L
I
1/ - - ~~O/
II
I I
I
The SCR's and rectifiers can be operated at full current only
if they have adequate heat sinking. The procedure illustrated
in Fig. 4 should be used when mounting the SCA's. A single
aluminum plate made as shown in Fig. 5 will provide
adequate heat sinking for trace and commutating rectifiers.
Lip punching of the chassis at one end of the clamp plate,
1.125
makes it possible to mount the rectifier using only one screw. ------(2a.581----1
S3702SF and S3703SF fit socket PTS-4 (United International
o",~l]~r,
Dynamics Corp., 2029 Taft St., Hollywood, Fla.!, or
equivalent.
Q 2 SCAEWS.
~HOT"'V""L"'8L.EFIlOt.oAC'"
632
0.312
(7.92)
-~
f!7=
0
DF31A
MICA INSULATOR
g5~~~~
' SUf'PLtEOw,THOEV'CE
o
0
o
0 ~cEHA:s~:~r
02 METAL
~
~
e
Q
WASHERS
e
-::...
U"

495334-7
2 NYLON
0.250
SHOULDER
In,
INSULATING
I.D.-O.156,n.(4.00mm)
SHOULDER OIA .
(6.40 mml
THICKNESS"
0.050 ,n. 0.27 mm) MAX.
BUSHINGS
}
2 LOCK WASHERS
2HEX.NUTS@ ~, ...."'"
FROMACA
2S0LDER LUGS~
2HEX.NUTS@
Fig.5-Suggested clamp plate and mounting arrangement for

rectifiers 02103S and 02103SF.

shown With your ReA sales representative or supplier.
FigA-Suggested hardware and mounting arrangement for

sews S3702SF and S3703SF.
DIMENSIONAL OUTLINE (JEDEC TO-66)
S3702SF,S3703SF
INCHES MILLIMETERS
.'
A
.0
.0,,
0.250
0.028
-
0.470
0.190
0.340
0.034
0.620
0.500
0.210
6.35
0.711
-
11.94
4.83
8.64
0.863
15.75
12.70
5.33
",
0.093 0.107 2.36 2.72
0.050
-
0.075 1.27
-
1.91
,
2
"
L 0.360
0.050
- 9.14
1.27
-
'p
q
0.142
0.958
0.152
0.962
3.61
24.33
3.88
24.43
- -
.
0.350 8.89
"
'2 -
0.570
0.145
0.590
-
14.48
3.68
14.99
Pin 1 - Gate
Pin 2 - Cathode
DIMENSIONAL OUTLINE (JEDEC 00-1)

D2101S, D2103S, D2103SF
INCHES MILLIMETERS
SYMBOL NOTES
MIN. MAX. MIN. MAX.
b 0.027 0.035 0.69 0.89 2
bl 0.125 3.18 1
D 0.360 0.400 9.14 10.16
Dl 0.245 0.280 6.22 7.11
D2 0.200 5.08
F 0.075 1.91
Gl 0.725 18.42
POLARITY SYMBOL INDICATES DIRECTION
OF FORWARD (EASY) CURRENT FLOW. K 0.220 0.260 5.59 6.60
THIS POLARITY 1$ OPPOSITE TO ReA
1 1.000 1.625 25.40 41.28
POWER SUPPLY RECTIFIERS.
Q 0.025 0.64
H 0.5 12.7
NOTES:
Thyristors/Rectifiers
OOm5LJD
Solid State S3705M D2600EF
Division
S3706M D2601DF
D2601EF
These RCA devices are silicon controlled rectifiers and silicon
rectifiers intended for use in horizontal-deflection circuits of SILICON
large-screen color television receivers. A simplified schematic
diagram for the utilization of these SCA's and silicon
rectifiers is shown below. For detailed information on the
CONTROLLED - G--
operation of this new deflection circuit, seeApplication
AN-3780.
Note
RECTIFIER AND ~ ~
The S3705M (40640)*
02601EF (40642)* silicon
silicon controlled-rectifier
rectifier are the trace circuit
and the
SILICON
components. They provide bipolar switching action for
controlling the horizontal
tube beam-trace interval.
yoke current during the picture RECTIFIER
The S3706M (40641) * silicon controlled-rectifier
026010F
and the
(40643)* silicon rectifier are the commutating
COMPLEMENT D2600EF
D2601DF
(retrace) circuit components. They control the yoke current
during the retrace interval.
For Horizontal D2601EF
The 02600EF (40644)* silicon rectifier is used as a clamp in Deflection Circuits JEOEC
the trace circuit to protect the circuit components from
excessively high voltages which may result from possible of Large-Screen 00-26
arcing in the picture tube or high-voltage rectifier.

ColorTV Receivers
High picture-tube beam current capability: to 1.5mA

dc average (max.)
Designed for off-the-line operotion: B+ = 155 V
Can fully deflect pi cture tubes having deflection angles
Supply voltages: 108 to 129 V ac to 90, 1-7/16" neck diameters, and 25-kV ultor vol-
Outstanding performance and reliability tages (nom. value)
COMMU-
TATING
S3706M (RETRACE) D260lDF
SWITCH
Repetitive Peak Off-State Voltage SCR SCR
With gate open . 600
Repetitive Peak Reverse Voltage

With gate open .
On-State Current:
For case temperature of +600C and 60 Hz
Average OC at 1800 conduction angle. IT(AV)
RMS .................... 'T(RMS)
Peak Surge (Non Repetitive)

On State Current:
For one cycle of 60 Hz voltage.
Critica I Rate of Rise of OnState Current:

For VOX = V(BO)O rated value.
IGT= SOmA, O.llJsrisetime .......
Gate Power Dissipationa;

Peak (forward or reverse)
for 10 IJS duration
Temperature Rangeb:
Storage . -40 to + ISO
Operating (case) .. -40 to +100
a Any values of peak gate current or peak gate voltage to give the maximum gate power are permissible.
b For information on the reference point of temperature measurement, see Dimensional Outline.
/
dV/dt~'
I
I VRX
_____ ,:----.l
I
I
I
I
-
I
I
I I
tori
~'Q I
I I
S3705M S3706M UNIT
Trace SCR Commutating SCR
Breakover Voltoge:
With gate open
At TC = + 100C ............... V(BO)O 400 V
At TC = +800C ................ V(BO)O 550 V
With gate open.
VOO = V(BO)O rated value
At TC = +1000C . 100M 0.5 1.5 mA
At TC = +800C . 100M 0.5 1.5 mA

For an on-state current of 30 A.
TC = +250C . vT 2.2 3 2.2 3 V
DC Cate Trigger Current:

At TC = +250C . ICT 15 30 15 30 mA(dc)
DC Cate Trigger Voltage:

At TC = +250C . VCT 1.8 4 1.8 4 V(dc)
Thermal Resistance:
Junction-to-Case .... ROJC 4 4 C/W

(Reverse recovery time + gate
recovery time)
Trace SCR-
At ITM = 6 A (tr = 25 ~s. di/dt = 2.5 A/~s).
Vo = 0 V (prior to turn on).
Vo = 400 V (reapplied at 175 V/~s).
VR = 0.8 V (min.).
IGT= 100mA.
VGK(bias) = -30 V (68 D source).
f = 15.75 kHz.
TC = 70C .
Commutating SCR-
At ITM = 13 A (Yo sine wave 7 ~s base.
initial di/dt = 20 A/~s to 3 A).
Vo = 350 V (prior to turn on).
dV/dt = 400 V/~s (to 100 V).
VR = 0.8 V (min.)
IGT= 100mA(tp= 3~s. tr= 0.2~s).
VGK(bias) = -2.5V (47 D source
during turn ofO.
f = 15.75 kHz.
TC = 70C .................
S3705M, S3706M, D2600EF, D2601DF, D2601EF File 1'10.354
SILICON RECTIFIERS D2601EF D2601DF D2600EF

MAXIMUM RATINGS: Trace Commutating Clamp
Silicon Rectifiers
Non-Repetitive Peak Reverse Voltagec .... VRM(nonrep) 700 800 700 V
Repetitive Peak Reverse Valtaged .. VRM(rep) 550 450 550 V
Forward Current: d
DC ......... IF 1 1 1 A
RMS . .. .. .. . IF(RMS) 1.9 1.6 0.2 A
Peak Repetitive. IFM(rep) 6.5 6 0.3 A
Peak Surgee ... IFM(surge) 70 10 20 A
Ambient Temperature Range:

Operating ..
.......
TA -40 to +150 e
Storage ....... Tstg -40 to +175 e
Lead Temperature:
For 10 seconds maximum. ........... 255 e
CHARACTERISTICS:
Max. Instantaneous Forward Voltage Drop:

At IF = 4 A, T A !o 75C .... ....... vFM 1.3 1.3 2 V
Max. Reverse Current (Static):!

At Te = 100C .. IRM 0.25 0.25 0.25 mA
At T A = 25C. . . . . . . IRM 10 10 10 I'A

At IF = 20mA, IR = ImA, Te = 25C. trr 1.1 1.1 1.6 max I'S
Turn-On Time:
At IF = 20 mA, Te = 25C .......... ton 0.3 0.3 0.3 max I'S
Peak Turn-On Voltage:

At IF = 20 mA, Te = 25C .......... 5 6 7 max V
C Pulse width = 10 J.LS, pulse repetition rate = 15.7 kHz,

3 pulses. E
For ambient temperatures
resistance from reference
up to 45C and maximgm thermal
point to ambient of 4S C/W with J
a_.w
0:
'OO
devices operating in circuit of Fig.I. 0"

0:0:
Pulse width = 3 ms.

At max. peak reverse voltage and zero forward current.
~~
60
~Q..
~9
:,j:@ 40
.......
0
...
0:
~ 2O!
Q. 0
-~ -~ 0 ~ ~ ~ 100 125 I~
AMBIENT TEMPERATURE (TA)- C
S3705M, S37061\1 02600EF, 02601 OF, 02601EF
JEOEC TO-66 JEOEC 00-26
.500
340 (864) l .470
('~I;O) r
pm)
075
"'~ ".. 1
1
'"' ",~ I",,'"' CATHODE
LEAD 1.4 (35.56)
l DETAILS OF OUTLINE (NOTE Il MIN.
i
IN THIS ZONE OPTIONAL .027-.036 OIA.
(.69-.91)
.344 -:410
,,d
(8.74 -10.41)
.107
.093 REFERENCE POINT
(2072)
FOR CASE TEMPER-
ATURE MEASUREMENT
2.36
REFERENCE POINT
~~~~:~EEr~~~~~E~ (478) 1.4(35.56)

MIN.
ANODE
"-- 2 MOUNTING HOLES LEAD
210
.190 .152 OIA (3.86) .027-.036 CIA.
.142 . 3.61
(5 33)
0
4.83 <'69j_~09i1 , ~0220-0260

(5.5i,~A~601
GLASS
INSULATION <>
+ 92C5-14457R3
Note 1: Connected to metal case.

Note 2: Arrow indicates direction of forward (easy) current flow
as indicated by de ammeter.
02600EF, 026010F, 02601EF

CATHODE.CASE
Pin 1: Gate
Pin 2: Cathode
Case: Anode
oornLJD
Solid State 02601A 02601F
Division 02601B 02601M
026010 02601N
1-A, 50-to-800-V
I
Fast-Recovery Silicon Rectifiers
I
/ General-Purpose Types for Medium-Current Applications
J~ Features:
IIIc,
Fast reverse-recovery time (trr) -
0.5 J.ls max. (I FM = 20 A peak Low forward-voltage drop
see test circuit Fig. 13)
Low-thermal-resistance hermetic
0.2 J.lSmax. (I F = 1 A, I RM = 2 A max., package
see test circuit Fig. 14)
,oov
S 50 V 200 V 400 V 600 V 800 V
Package
00-26 0260' F 0260' A 0260'8 026010 02601M D2601N
- - ITA7892I ITA7893J ITA78941 ITA78951
RCAD2601series rectifiers are silicon diffused-junction- Types D2601A, B, D, F, M, and N are intended for use in
types in an axial-lead hermetic package. They differ only in high-speed inverters, choppers, high-frequency rectifiers, "free-
their voltage ratings. wheeling" diode circuits, and other highfrequency applications.
These devices feature fast recovery times (0.5 J.ls max. from
20 A peak) without the "snap" type of turn-off which could
result in the generation of transients.
02601F 02601A 026018 026010 02601M 02601N

REVERSE VOLTAGE:
REPETITIVE PEAK ............... VRRM 50 '00 200 400 600 800 V
NON-REPETITIVE PEAK _ VRSM '00 200 300 500 700 1000 V
FORWARD CURRENT:-
Conduction angle = 180, halfsine-wave
RMS . . . . . . . . . . . . . IF(RMS) .... ,
1.5
A
Average
REAK-SURGE (NON-REPETITIVE)
10
A
CURRENT:
At junction temperature IT Jl = 150C
......
For one-half cycle of applied voltage,
60 Hz (8.3 ms) 35 A
For other durations See Fig. 2
PEAK (REPETITIVE)
TEMPERATURE RANGE:
CURRENT IFRM 6 A
Storage. Tstg .. c
Operating (Junction) TJ .. -40 to '65
40 to 150 c
LEAD TEMPERATURE (Durin9 Solderin9): TL
At a distance of 1/8 in. (3.17 mm) from
case for 10 s max. .. 225 c
At lead temperature of 100C (measured at point of anode lead 1/32 in: 10.031 mm) from the case).
LIMITS
MIN. MAX.
Reverse Current:
Static
For VRRM = max. rated value, IF = 0, TJ = 25C ....... IRM - 15 jlA
TJ = 100C ...... - 250
Dynamic ....................................... See Fig. 9
At iF = 4 A, TJ = 25C (See Fig. 3) . . . . . . . . . . ........ vF - 1.9 V
For circuit shown in Fig. 13, at IFM = 20 A,
-di F/dt = -20 A/jls, plus duration = 2.8 jlS,
TC = 25C .................................... trr - 0.5 jls
For circuit shown in Fig. 14, at IF = 1 A,
IRM = 2 max., TC = 25C . . . . . . . . . . . . . . . . . . . . . . . . - 0.2
Thermal Resistance (Junctionto-Case)- ................. ReJC - 39 C/W
JUNCTION TEMPERATUHE (TJ ) "150C
60
z
;;;
o ~I ...I\.J\.-
!::'"iso
: 2.5 0-", i..,+,-I
'"'" ~~
O::t- 40
8.3ms
ffi 2 'z
z"'
00: ""-
~
ll.. 1.5
za:: 30
-::> .........
...........
o
",0
---
0:
;
0: I
~~
,?,.
20 ..........
~ "0:
~e -.......
--
10
"'~O.5 t--
~ 0
~ 0
20 40 60 80 laD 120 140 160 180
ALLOWABLE LEAD TEMPERATURE(T L} - c
92CS-17518RI
Fig. 1 - Average forward-power dissipation vs. lead temperature.
2.5 FOR UNIT WITH TYPICAL FORWARD
..
0
0:
JUNCTION TEMPERATURE (TJ 1=25C
VOLTAGE DROP
SWITCHING LOSSES NEGLECTED
0 CURRENT WAVEFORM
"''" 2 o~IFM
~ /'
5
>
0>
./
-t,,~j.
-
~I
~-~.5 MAXIMU~
- --- -
"-~
'"
::>
:il
z
,-- --
-
0- TYPICAL
Z
--r
to
" 0.5
92C5-1752'
Fig. 4 - Average forward power dissipation as a function of peak
current and duty factor for units with typical forward
voltage drop.
0.-
CURRENT WAVEFORM
Z
o IFM
I-
1i'.
O~
'"'"o
,.
or
w
1?
6or <i!

"
;:;'"
,::'
.. .
O'
O'
o
~
tt~~
0"
o~
~
~
I
~ fA O~
w 1.5 A (RMS) LIMIT
~
~ 0
o
Fig. 5 - Average forward power dissipation as a function of peak Fig. 6 - Average forward power dissipation as a function of peak
current and duty factor for units with maximum forward current and duty factor for units with typical forward
voltage drop. voltage drop.
FOR UNIT WITH MAXIMUM FORWARD I REFERENCE POINT FOR

VOLTAGE DROP MEASUREMENT OF LEAD
SWITCHING LOSSES NEGLECTED TEMPERATURE: 1/8" FROM CASE
10.55 I PULSE REPETITION RATE = 60
-; CURRENT WAVEFORM I PULSES Is
I
nn- 1FM
t~ O~t~~ >
or
w
0.40 ~ I
!
ffi 0.35
~
tr 0.30
Fig. 7 - Average forward power dissipation as a function of peak

current and duty factor for units with maximum forward
voltage drop.
1'00 PEAK FORWARD CURRE N T {! FM 1 = 10 A

RECTANGULAR-PULSE DURATION (lpl=30f/.s
I-
u z
w
or W
or
~ 4.5 or
I-
=>
U 10
z >0<
~ 4.0 ~I @'
or >~
o u
- r- JUNCTION TEMPERATURE ~
G u w
B 3.5
w or
or "or
w
n,,~~
1; ffi~1
~ 3.0
l:l
~
or
~ 2.5
"
~ ~O. I
or
0' /" I I
0.1 I 10 100
RATE OF DESCENT OF FORWARD CURRENT {-dlF/dtl-A/,us
92CS-17527
Fig. 10 - Peak reverse-recovery current vs. rate of descent of

forward current.
100 RECTANGULAR-PULSE DURATION Upl:: 30,us 10 PULSE DURATION (tp)::: 30 J.LS
RECTANGULAR
JUNCTION TEMPERATURE (TJl :: 150C JUNCTION TEMPERATURE (T J )=150 C
...
~ I I 1
~
a ~~I "'lE II~\'\.~'"
10
l' ~ '""' I
~<:-"'~
>-
"
-
~I (;l '3 c;'~
>=
u ~
<;'~
~'\~~
V :. ~
>

:I.. ~Q/,
",,~" V
IA
"'
"'
"'<r _<r
"
<r
~Q~
,..~~
v
'"
:;..-
O
~
<r~
I
~/
ffi~' ~+ ~O.I 0.1 A
iiO
~ q~ '/ .....
~ ~
~
0.1 0.01
OJ I 10 100 0.1 I 10 100
RATE OF DESCENT Of FORWARD CURRENT (-dlF/dt}-A/,us RATE OF DESCENT OF FORWARD CURRENT(-di.F/df) - A/fLS
92CS-17528 92C5-17529
RCA
IN3194
OR
RCA
I
t RECTIFIER
UNDER TEST
012018
AMPLITUDE
0-130 v
50-n OUTPUT
TO OSCILLOSCOPE
"* .
AC SOINI) I WITH RISE
R", ]
TIME ~ 0.01 /-,5)
ReA O.I(Nll
D26Q1N
TRIGGER
SIGNAL TO
] OSCILLOSCOPE
NOTES:
ALL RESISTANCE VALUES ARE IN OHMS.
RM : MONITORING RESISTOR
** UNITS INTERCONNECTED WITH RG - SBU CABLE WITH

50-0 TERMINATING RESISTOR AT INPUT
TERMINALS OF OSCILLOSCOPE.
50-n OUTPUT
TO OSClllOSCOPE"-
(WITH RISE
TIME:s 0.01 ~S)
CONSTANT
30 V DC VOLTAGE SUPPLY
(CONSTANT VOLTAGE (ADJUST FOR I A DC
SUPPLY) THROUGH RECTIFIER
UNDER TEST-APPROX. 30 V 1
UNITS INTERCONNECTED WITH RG-58U CABLE WITH

50-n TERMINATING RESISTOR AT INPUT
TERMINALS OF OSCILLOSCOPE
RI SELECTED TO GIVE MAXIMUM

lRM NO GREATER THAN 2 A
(APPROXIMATELY 1.4 nl
R2 I n,IOW NON-INDUCTIVE OR TEN

10 n, I W, 1"10 CARBON COMPOSITION RESISTORS
CONNECTED IN PARALLEL
DIMENSIONAL OUTLINE
JEDEC 00-26
POLARITY
SYMBOL INSULATION I
LEAD No I LEAD No 2 ~
~'\ ') I .~.

l,Jc,JJ .~,:.:J
INCHES MILLIMETERS
SYMBOL NOTES
0. MIN.
0.021
MAX.
0.039
MIN.
0.69
MAX
0.99
,D
G
0.220
0.344
0.260
0.410
5.59
8.14
6.60
10,41 ,
1
L 1,400 - 35.56 -
L, - 0.080 - 2.03 2
NOTES:
1. Package <:ontour optIonal Wllhln cyhndet of diameler 0
and lenglh G. Slugs. If any. shall be meluded within Ihls
cyhnder bul shall not be subject to the mm,mum hmll 01
oD.
2. Lead diameter not controlled m Ih" :lone to allow lor
flash, lead"nosh build up. and mlllor Irregularitlft olher
than slugs.
OOCDSLJD
Solid State
Division
1-A, 50-to-800-V
General-Purpose Types for
Medium-Current Applications
Features:
Fast turn-off: 0.5 JlS max. from 3.14-A peak
ANODE
Low overshoot current
JEDEC 00-15
Low forward voltage drop
ReA 02201 Series devices are diffused-junction silicon turn-off which could result in the generation of transients.
rectifiers in an axial-lead package. These devices, which differ The 02201 series are intended for use in high-speed inverters,
only in their voltage ratings, feature fast recovery times {O.S choppers. high-frequency rectifiers, "free-wheeling" diode
JlS max. from 3.14 A peak) without the "snap" type of circuits, and other high-frequency applications.
REVERSE VOLTAGE:
REPETITIVE PEAK .
NON-REPETITIVE PEAK
FORWARD CURRENT:*
RMS
AVERAGE:
PEAK SURGE (NON-REPETITIVE):
At junction temperature IT Jl = 150C

For one-half cycle of applied voltage, 60 Hz (8.3 ms) 50 A
For other durations. See Fig. 3

PEAK (REPETITIVE). 6 A
STORAGETEMPERATURE RANGE -40 to + 165 c
OPERATING (JUNCTION) TEMPERATURE 150 c
LEAD TEMPERATURE (During Soldering):
Measured 1/8 in. (3.17 mml from case for 10 s max, 255 c
Min. Max.
Reverse Current:
Static:
For VRRM = max. rated value. IF = O. IRM
TJ = 25C - 15 /1A
TJ = 100C - 250 /1A

vF - 1.9 V
At iF = 4 A. TJ = 25C See Fig. 4.

For circuit shown in Fig. 1 :
At IFM = 3.14 A. -diF/dt = 10 A//1s. - 0.5 /1S
pulse duration = g.4 /1S. TC = 25C trr
In Tektronix type "S" plug-in unit:

At IF = 20 mA. I R = 1.0 mA
- 1.5 /1S
(DC values) TC = 25C
Thermal Resistance (Junction-to-Lead)*

ROJL - 20 C/W
See Fig. 14
1/2A ISOLATION
j 25 V TRANSFORMER
117E==J11'~cV
117 V
AC
50-0 OUTPUT **
TO OSCILLOSCOPE
50lNII (WITH RISE
RM
O.ltNI) J TIME ~ 0.01 /-LS)
TRIGGER
J SIGNAL TO
OSCILLOSCOPE
NOTES
ALL RESiSTANCE VALUES ARE IN OHMS
*- ADJUST FOR CURRENT WAVEFORM SHOWN AT LEFT
** UNITS INTERCONNECTED WITH RG -58U CABLE WITH

REFERENCE POINT
JUNCTION TEMPERATURE (TJ I :150C J\..f\..
.. 60
FOR MEASUREMENT
OF LEAD TEMPERATURE
;;;
>1
Y-rJ
83 ms
!:"i 50
1-",
~ I--i~ I-i~ HEAT ~INK
.....
w,,-
~;: 40
~ r-....
..........
'z
zw ........
00:
~~
we>
30
.... ~
~~ 20
"''0
><0: ~
~~
'00 'r---
8 10 2 8100
o SURGE - CURRENT DURATION - -CYCLES
20 40 60 80 100 120 140 160 180 92C5- 21658
ALLOWABLE LEAD TEMPERATURE{T Ll- C
2.5
..
0
0:
JUNCTION TEMPERATURE (TJ)" 25C
rJfrlF~0~R~U~N~';T~W~IT~H~T~YP~'C~A~L~F~0~R~W~A~RD1~!ill~~il
:
VOLTAGE
SWITCHING
DROP
LOSSES NEGLECTED l L
0 0.. CURRENT WAVEFORM

w z
2 o
'"
~ ./
./
~
0
>
0> o
'"'"
~I
3: -1.5
0:
MAXIMU~
0: "-
~
,-
0>
"-- _I
'"
::>
S
.
z
I-
Z
....-
---r-
I
1
I
TYPICAL
- -- ....-
~
~
0.5 - I
I
I
'0 FOR UNIT WITH TYPICAL FORWARD

I
VOL TAGE DROP
~
;;:
SW' TCHING LOSSES NEGLECTED
~z CURRENT WAVEFORM
0 IFM
~
iii ~
oJlJL
15 2
0:
~
~ ~
'-'
.;:'"
.:::' '"
O '"
O
~
tl~~
0
0:
t:
4! " ,,">
,,:I-
; I
,,~
0:
0
~
11 1.5-A{RMSILlMIT
FOR UNIT WITH MAXIMUM FORWARD 350 REFERENCE POINT FOR MEA SUREMENT
VOLTAGE DROP OF LEAD TEMPERATURE: lIS" FROM
SWITCHING LOSSES NEGLECTED CASE, PULSE REPETITION RATE:60
'" 325 PULSES/s
I
Onn-1FM
CURRENT WAVEFORM
~300
-tt~~ w
~ 275
>-
'" 250
w
'g" 225
"'.~~. -diF Idt:IO A/~s
10"'1. rRM
tR~C)
>
~ 200
o
I*--
rRM
(RECl-
9.4 ~s -
tj'
trr
175
50 75 100 125 150
LEAD TEMPERATURE tTLl-OC
100 PEAK FORWARD CURRENTIIFM):IOA

RECTANGULAR-PULSE DURATION (tp):3OfLs
>-
~
~ 10
>-
ffil
>"'"U
I--
- JUNCTION TEMPERATURE ~
~
o
U W 17JI<150'C ~
'" :i
W '"
w'"
ffi~1
~ /~_50'
'""
~ ~~. I
0.1
0.1
I/'
I
I I 10 100
RATE OF DESCENT OF FORWARD CURRENT {-diF/dti-A/JLs
92CS-17527
100 RECTANGULAR-PULSE DURATION (tpl I< 30 JLs 10 RECTANGULAR-PULSE DURATION (t pl- 30 fLS
JUNCTION TEMPERATURE tTJ) I< 150C JUNCTION TEMPERATURE (T J )-150C
>-
~ I I I.
~\>I ~ .,~ II.~
~ (I.~
~ 10 .' ""
G ::0
I
-'~~~
>-"" g ",;,'1'
,.,,~"
-
<,,~~
ffil f<,~
~ . IA
>~
o u
U
w",
w ",,~'I' ./ t. >
0 :L +- ~~
I-- -I
" O ~ I
'" :i
w'" "'~
~O'l' ./ "'~ f7;/ 1
ffi~1 f<,\>+-
~ ~O.I 0.1
~ q~./ '" -
'"" ~~'"
w
~
~
0.1 0.01
0.1 I 10 100 OJ I 10 100
RATE OF DESCENT OF FORWARD CURRENT (-dlF/dtl-A/fLs RATE Of DESCENT Of FORWARD CURRENT(-dLf/dt) - A/JLs
92CS-17528 92CS-17529
DIMENSIONAL OUTLINE
JEDEC 00-15
INCHES MilLIMETERS
SYMBOL NOTES
MIN. MAX. MIN. MAX.
OB 0.030 0.034 0.762 0.863 -
00 0.133 0.137 3.378 3.4 79 1
G 0.280 0.285 7.112 7.239 1
L 1.000 - 25.40 - -
L1 - 0.050 - 1.27 2
1. Package contour optIonal wIthin cylmder of d,ameter <PO and length G.

Slugs. If any, shall be Included WIthin this cylinder but shall not be subject to
the minimum limIt of O
2. Lead diameter not controlled ,n thIs lone to allow for flash, leadflnlsh
build-up. and minor Irregularttles other than slugs.
Cathode
6-A, 50-to-600-V,
*-~~A
I
,Cathode Anode
Features:
Available in reverse-polarity versions: Low reverse-recovery current
D2406A-R, D2406B-R, D2406C-R, Low forward-voltage drop
D2406D-R, D2406F-R, D2406M-R Low-thermal-resistance hermetic
Fast reverse-recovery time (t,,) - package
0.351.1s max. (lFRM = 19 A peak, see test circuit Fig.1)
0.2 I.Is max. (I F = 1 A, I RM = 2 A max., see test circuit Fig.2)
ReA D2406 series and D2406-R series are diffused- covery characteristics that reduce the generation of R F I and
junction silicon rectifiers in a stud-type hermetic package. voltage transients.
These devices differ only in their voltage ratings. These devices are intended for use in high-speed inverters,
choppers, high-frequency rectifiers, "freewheeling" diode
circuits, and other high-frequency applications.
02406F 02406A 02406B 02406C 024060 02406M

(438791* (43880)* (43881)* (43PS21* 14388:l)* (43884)*
02406FR 02406A-R 02406B-R 02406C-R 024060-R 02406M-R
(43879R)* (43880R)* (43881 R)* (43882RI* 143883R)* (43884R)*
REVERSE VOLTAGE:
Repetitive peak VRRM 50 100 200 300 400 500 V
Non-repetitive peak VRSM 100 200 300 400 600 800 V
FORWARD CURRENT (Conduction angle = 180,
half sine wave):
RMS ITC) = 1000C)- IFIRMS) 9 A
Average (T C = 100C I- 10 6 A
Peak-surge (non-repetitive):
IFSM
At junction temperature IT Jl = 150C:
For one-half cycle of applied voltage, 60 Hz (8.3 ms) 125 . A
For other durations See Fig.3
Peak (repetitive) . IFRM 25 A
STORAGE-TEMPERATURE RANGE -40 to 165 DC
OPERATING IJUNCTION) TEMPERATURE 150 DC
STUD TORQUE:
Maximum 100 NOT EXCEED) . 25 in-Ib
LIMITS
MIN. MAX.
Reverse Current:
Sratic
For VRRM "" max. rated value, IF = 0, TC = 2SoC IRM - 15 IlA
TC = lOOoC - 3 mA

At iF 6 A, T J = 25C vF - 1.4 V

For circuit shown in Fig. 1, at
I FM = 19 A, -di F/dt = 25 Allls,
pulsed duration = 2.25 IlS, T C = 25C trr - 0.35 IlS
IFM = 1 A, IRM = 2 A max., TC = 25C. - 0.2
Thermal Resistance (Junction-ta-Case) ROJC - 3 C/W
o 5 ~H1t
fT [l
RCA
IN3194
OR
RCA
012018 t RECTIFIER
UNDER TEST
AMPLlTur)[
0-130 v 0471'-F
AC
1'25 v 1
TRIGGER
J SIGNAL TO
OSCIllOSCOPE
*- ADJUST FOR CURRENT WAVEFORM ShOWN AT l l f ,
If* UNITS INTERCONNECTEO WITH RG -5BU CABLE WITH

soon TERMINATING RESISTOR AT INPUT
50-n OUTPUT
TO OSCILLOSCOPE*
(WITH RISE
TIME~ 0.01 ,.S)
CONSTANT
(CONSTANT VOLTAGE (ADJUST fOR I A DC
UNDER TEST-APPROX. 30 v)

RI: SELECTED TO GIVE MAXIMUM

IRM NO GREATER THAN 2 A
(APPROXIMATELY 1.4 fi)
R2: I a,IOW NON-INDUCTIVE OR TEN
10 n, I W,I". CARBON COMPOSITION RESISTORS
JUNCTION TEMPERATURE (TJ) =r~)OC 1000 JUNCTION TEMPERATURE (TJ)=25C

J\J\.. .. 6
4
I
;;; ..
150
yt
8.3ms
:;
->- 2
z 100.
~ I 125
>--
-::IE
>-.,
'"
~ 6
4
/'
"''''
~!::!100 \ a 2
TYPICAL/ / MAXIMUM
0
'/
"'>-
oz
z",
0'"
z'"
-::>
75 ""- ......
'"~
(?
.,
10
4 I
"'U ............
::> 2 II
.,~50
~~ 2 'I
"'"
~~ 25
r-- r-
- ..
z
>-
z
~
I

6
4
II
I,
" 0.1
2
o
II
r 2 3 4
INSTANTANEOUS FORWARD VOLTAGE DROP (vF)-V
9ZCS-ZZZ33
9ZCS-ZZZ3Z
Fig.3 - Peak surge (non*repetitille) forward

current 115.
surge-.eurrent duration.
~
....!... FOR UNIT WITH TYPICAL FORWARD CURRENT WAVEFORM FOR UNIT WITH MAXIMUM FORWARD
VOLTAGE DROP VOLTAGE DROP
O~IFM SWITCHING LOSSES NEGLECTED
~
..!!o..
Q
z ~It~-!
I-
~
~ 10
a:
~ 9-A (RMS) 9-A CRMS)

LIMIT 11011
~ 9~
20 30 40 50 60 20 30 40 50 60
PEAK FORWARD CURRENT (IFM) - A 92C5-22234 PEAK FORWARD CURRENT (IFM) - A
Fig.5 - Average forward power dissipation Fig.6 - Average forward power dissipation
as a function of peak current and as a function of peak current and
duty factor for units with typical duty factor for units with maximum
forward voltage drop. forward voltage drop.
FOR UNIT WITH TYPICAL FORWARD CURRENT WAVEFORM ~I FOR UNIT WITH MAXIMUM FORWARD CURRENT WAVEFORM
VOLTAGE DROP
SWITCHING lOSSES NEGLECTED 0
rIL.Jr-,-
J L
IFt~
>
VOLTAGE
SWITCHING
DROP
LOSSES NEGLECTED 0
r"1 ri -
J L....J L
IFM
~ 15
I, I- ..!!o.. - 6 II ~
z
IZ o 60/1) 12
~ 0"
~ 10 o' "?it'
o o:..ry
'"
~ 0':- 9-A (RMS)
LIMIT
0"
::-.~o
,:\.09':J \ .
\l"'~
~",\l''t
~~c"'\o~
~C~O
Q\)-0 Q\)"'\ . "
10 20 30 40 50 60 20 30 40 50 60
PEAK FORWARD CURRENT (IFM) - A 92CS-22236 PEAK FORWARD CURRENT (IFM)-A
Fig. 7 - A versge forward power dissipation Fig.8 - Average forward pO'Ner dissipation
forward voltage drop. forward voliage drop.
..
a:
FOR UNIT WITH TYPICAL
VOLTAGE
SWITCHING
DROP
FORWARD
LOSSES NEGLECTED ..
FOR UNIT WITH MAXIMUM FORWARD
~~~;~~I~G D~SES NEGLECTED

CURRENT
o~IFM
WAVEFORM
..
a:
::>
~ ~It~-!
....'"
I-
~
..'"
I-
"'u "u
c. "'.
~1'30
~t!!
~ 1130
~.?
c- <D_
~
g
...J
C ~
c
'"::> '"
::>
xc'" '"xc
'" '"
92CS22238 '32CS22239
Fig.9 - Maximum allowable case temperature Fig. to - Maximum allowable case temperature
as a function of peak current and as a function of peak current and duty
duty factor for units with typical factor for units with maximum forward
forward voltage drop. voltage drop.
n
..~
~nc
I-
"'0
~I
w-- 130
-',?
~-
'"j

'"
=>
'"x
'"
92CS-22240
92C5- 22241
Fig. 11 - MaxImum allowable case temperature F;g.12 - Maximum allowable case temperature
duty factor for units with typ;cal duty factor for units with maximum
4-,-,"",., ~
~
OFOC
MICA INSULATOR
:::~:~::;,~:llS>1EO
INCHES MILLIMETERS
G
HEAT SINK SYMBOL MIN MAX. MIN. MAX. NOTES
{CHASSIS}
A - 0.405 - 10.28
b - 0.250 -
6 DF3D , 0.020 0.065 0.51
6.35
1.65
2
TEFLON"
0.0."' 0.275
INSULATING
,no 16.99mm)
BUSHING
MAX.
,0 - 0.505 - 12.82
t:::=== THICKNESS-0.055 'I'.

,0, 0.265 0.424 6.74 10.76
(I.40mmIMAX E 0.423 0.438 11.12
~
.-.Y""l.-.BlEATPU8L'S"EO
>1"'ROWAREPR'CES F, 0.075 0.175
10.75
1.91 4.44 ,
J 0.600 0.800 15.24 20.32
NR59B f"O\--- ~~~ INSULATOR

,M
N
0.163
0.422
0.189 41' 4.80
0453 10.72 11.50
CONNECTOR ~o - "'YA'lABlE.-.TI'UIl'S>1EO
'-'V.'lAIU A' I'UIllS EO HARDWAREPfI'CU N, - 0.078 - 1.98
H"RD'IO"ARE
PfI'CU 0 oT 0060 0095 1.53 2.41
- I
OW 1D-32UNF-2A 1032 UNF'2A 3
2 - 0.050
@ I
0002
~:~~~CK WASHER} ::;:l'tO "

NOTES'
- 0.006 - 0.152
~ NA38C OEv,n
1: Chamfer or unde,eul on one Or both "des 01 huaganal base "
~ HEX.NUT optional
2: Angular orientation and contour of Terminal NO.1 is optional.
3: (>Wis pitch diameter of coatl:!dIhreads. REF: $(:rew Thread
Standards lor Federal SerYlces.Handbook H 28 Part 1
RKommended torque: 15 onchpounds.
Forward Polarity Reverse Polarity

(D2406 Series) (D2406-R Series)
No.1 (Lug) - Anode No.1 (Lug) - Cathode
No.2 (Stud) - Cathode NO.2 (Stud) - Anode
When Incorporatmg ReA Solid State DeVices In equipment, It IS
recommended that the deSigner refer to "Operating Considerations for

RCA Solid State DeVices", Form No.1 CE-402, available on request
from RCA Solid State DIVISion, Box 3200, Somerville. N.J. 08876.
[ID(]5LJ[J
Solid State 1N3879-1N3883
Division
1N3879R-1N3883R
6-A, 50-to-400-V,
General-Purpose Types for High-Current Applications
Features:
Available in reversepolarity versions: - Low reverse-recovery current
1N3879R, 1N3880R, 1N3881 R, Low forwardvoltage drop
1N3882R, 1N3883R Low-thermal.resistance hermetic
Fast reverse-recovery time (trr) - package
200 ns max. (I F = 1 A, I RM = 2 A max., see test circuit Fig. 2)
Forward-polarity Reverse-polarity
11N38791N3883) 11N3879Rl N3883R)
For data on other RCA fast recovery rectifiers, refer to the following RCA
data bulletins: 6.A File No. 663 (02406 Series)
JEDEC DO-4
1 H1167
12A File No. 664 (02412 Series)
40-A File No. 580 (02540 Series)
RCA types 1N3879 - 1N3883 and 1N3879R - 1N3883R are All types feature fast reverserecovery time of 200 ns max.
diffusedjunction silicon rectifiers in a stud-type hermetic These devices are intended for use in high-speed inverters,
package. These devices differ only in their voltage ratings. choppers, highfrequency rectifiers, "freewheel ing" diode
circuits, and other high-frequency applications
REVERSE VOLTAGE:
*Repetitive peak 50 100 200 300 400 V
Non-repetitIve peak 75 200 300 400 500 V
*DC{Blockingl "0'. 50 100 200 300 400 V
FORWARD CURRENT (Conduction angle"" 180 .
half sine wave):
RMS (TC = 100oC)& 9 A
o
* Average (TC - 100 Cl4 6 A
Peak-surge (non-repetitive): 0
At Junction temperature (T Jl =< 150 C-

For one cycle of applied voltage. 60 Hz 75 A
For ten cycles of applied voltage, 60 Hz 35 A
Peak (repetitive) 25 A
'STORAGE-TEMPERATURE RANGE -65 to 175 c
'OPERATING IJUNCTION) TEMPERATURE -65 to 150 c
STUD TORQUE:
*Recommended
15 in-Ib
Maximum (DO NOT EXCEED) . 25 in-Ib
*In accordance wIth JEDEC regIstration data.
Case temperature IS measured at center of any flat surface on the hexagonal head of the mounting stud.
LIMITS
CHARACTERISTIC SYMBOL All TYPES UNITS
MIN. MAX.
Reverse Current:
Static
For VRRM = max. rated value, IF = 0, TC = 25C ................ IRM - 15 /lA
TC=100C ........... - ... - 1 mA
Dynamic
For single phase full cycle avera911, 10 = 6 A, TC=100C .......... IR(AV) - 3 mA

At iF = 6 A, VRRM = rated value, TJ = 100C ... . ... . . . .. ... . . . VF(PK) - 1.5 V
At iF = 6 A, TJ = 25C .................................... vF - 1.4 V

IFM = 1 A, IRM = 2 A max., TC= 25C ..................... trr - 200 ns
Thermal Resistance (Junction-to-Case) .......................... ReJC - 2.5 C/W
50-a OUTPUT TO
OSCillOSCOPE"
{WITH RISE
TIME:50.0IjOSl
CONSTANT
VOLTAGE SUPPLY
I ADJUST FOR I A DC
THROUGH RECTIFIER
UNDER TEST
-APPROX '0 VI

50-a TERMINATING RESISTOR AT INPUT
TERMINALS OF OSCillOSCOPE
I~RI SELECTED rOGlvE MA)(IMUM

(APPROXIMATELY 14 nl
IF '" R2 I D lOW NON-INDUCTIVE OR TEN

o 10 n, I W 1"1. CARB0f'l COMPOSITION RESISTORS
IRM-
I.
Fig. 2 - Test circuit (pulsed de) for measurement of

reverse-recovery time.
DIMENSIONAL OUTLINE
JEDEC 004
.
SYMBOL
b
MIN.
-
-
0.020
INCHES
MAX.
0.405
0.250
0.065
MILLIMETERS
MIN.
-
-
0.51
MAX.
10.28
6.35
NOTES
'.66
00 - 0.505 - 12.82
00, 0.265 0.424 6.74 10.76
~ NR109. } E 0.423 0.438 10.75 11.12
~ STAALOCK WASHER SUI'I'LIE.'
~ NA38C OEV'CE "

J
0.075
0.600
0.175
0.800
1.!Jl
15.24
'.44
20.32
~ HEX. NUT OM 0.163 0.189 4.15 '.80
N 0.422 0.453 10.12 11.50
N, - 0.078 - '.98
.T 0.060 0.095
.w
'.53 2.41
,
, 10-32
- -r
UNF2A
0.002
'''3'["'.''
- 0.050
shown with your ReA sales representative or supplier. "

NOTE:
- 0.006 - 0.152
1: oW is pitch diameter of coated th,..;!s. REF: Screw Threed

Standards for Federal SeniC8$. Handbook H 28 P.rt l.
Recommended torque: 15 inch-pounds.

(lN3879 - 1 N3883) (l N3879RI - 1N3883R)
No. 1 (Lug) - Anode No.1 (Lug) - Cathode

No.2 (Stud) - Cathode No.2 (Stud) - Anode
OOCTI5LJD
Solid State 02412 Series
Division
02412-R Series
12-A, 50-to-600-V,
fO~,AICathode
Anode
* Fast-Recovery Silicon Rectifiers
Available in reverse-polarity versions: - Low reverse-recovery current

02412A-R, 02412B-R, 02412C-R, low forward-voltage drop
024120-R, 02412F-R, !J2412M-R low-thermal-resistance hermetic
0.35 IlS max. (lFRM = 38 A peak, see test circuit Fig.1)
0.2 IlS max. (I F = 1 A, I RM = 2 A max., see test circuit Fig.2)
RCA 02412 series and D2412-R series are diffusedjunction covery characteristics that reduce the generation of R F I and
silicon rectifiers in a studtype hermetic package. These voltage transients.
devices differ only in their voltage ratings. These devices are intended for use in high-speed inverters,
choppers, high-frequency rectifiers, "free-wheeling" diode
02412F 02412A 02412B 02412C 024120 02412M

(43889'* (43890)* (43891)* (43892'* (43893)* (43894)*
02412F-R 02412AR 02412B-R 02412C-R 024120-R 02412M-R
(43889R)* (43890R)* (43891R'* (43892R)* (43893R)* (43894R)*
REVERSE VOLTAGE:
half sine wave):
RMS (TC 100C) IF(RMS) 18 A
Average (T C 1000C)- 10 12 A
Peak-surge (non-repetitive): IFSM
At j'.mction temperature (T J) = 150C:
For one-half cycle of applied voltage, 60 Hz 18.3 msl 250 A
Peak (repetitive) . IFRM 50 A
STORAGE~EMPERATURERANGE -40 to 165 c
OPERATING (JUNCTION) TEMPERATURE 150 c
STUD TORQUE:
Maximum (DO NOT EXCEED) . 25 inlb
* Number in parentheses is a former ReA type number .
Case temperature is measured at center of any flat surface on the hexagonal head of the mounting stud.
LIMITS
MIN. MAX.
Reverse Current:
Static
For VRRM "" max. rated value, IF = 0, TC = 2SoC IRM - 100 ~A
TC: 100C - 4 mA

AliF: 12 A. TJ:250C. vF - 1.4 V

I FM : 38 A. -di F/dl : 25 A/~s.
pulse duration = 4.5 J.ls,-T C :: 25C Irr - 0.35 ~s
IFM: 1 A.IRM:2 Amax .. TC:250C. - 0.2
Thermal Resistance (Junction-to-Case) ReJC - 1.5 C/W
[l!
1t
2.25 ftH
IN3194
ReA
OR RECTIFIER
0'20' B UNDER TEST
AMPLITUDE 500 OUTPUT

0-130 V
AC
1.33 ~F
TO OSCILLOSCOPE **
5O(NI) (WITH RISE
R", ]
TIME ~ 0.01 fJ-S)
O.I(NII
TRIGGER
J SIGNAL TO
OSCILLOSCOPE
NOTES:
*- ADJUST FOR CURRENT WAVEFORM SHOWN AT lEFT

IA 50-n OUTPUT
SLOW TO OSCILLOSCOPE'"
BLOW (WITH RiSE
TIME:::: 0,01 ,...S)
CONSTANT
SUPPLY 1 THROUGH RECTIFIER
UNDER TEST-APPRQX 30 v)
* UNITS INTERCONNECTED WITH RG-5BU CABLE WITH

50-fi TERMINATING RESISTOR AT INPUT
RI; SELECTED TO GIVE MAXIMUM

(APPROXIMATELY 14 Ol
R2: I n,IQW NON-INDUCTIVE OR TEN

10 n, I W,I% CARBON COMPOSITION RESISTORS
300 JUNCTION TEMPERATURElTJ);1500C

J\....f'L cxIOOO: JUNCTION TEMPERATURE (TJ); 25C
I 4
'""
250
YT ~
~l
>='"
~S200
\ 8.3ms >-
~ 1008
i:' 6
'
i:!-
,>-
ZZ
0'"
~~
",=>
/50
\ ;:: 4
~ ,
! lOa
1/
IV
Ii!~
=><r
~;
,,<r
"'0
a."-
100
50
~ ........
--
I--- I----
r-+-
~
'"
=>
~
z
>"-
Z
~
~
6
4
0
, 4 6 8
o I 2 .3 4
INSTANTANEOUS FORWARD VOLTAGE DROP (vFI- v
92CS-22261
CURRENT WAVEFORM CURRENT WAVEFORM
o f\........J\..I FM
FOR UNIT WITH TYPICAL FORWARD
o f\........J\.. I
VOLTAGE DROP FM VOLTAGE DROP
SWITCHING LOSSES NEGLECTED SWITCHING LOSSES NEGLECTED
~I,~-! ~I,~-!
92CS -22269 92CS -22268

Fig.5 - Average forward pOlNer dissipation Fig.6 - Average forward polNer dissipation
0.rr.n-1FM
FOR UNIT WITH TYPICAL FORWARD CURRENT WAVEFORM FOR UNIT WITH MAXIMUM FORWARD
VOLTAGE DROP VOLTAGE DROP
SWITCHING LOSSES NEGLECTED SWITCHING LOSSES NEGLECTED
I-
0.rr.n-1FM
'I
CURRENT WAVEFORM
'2
~,~~
92CS-22270 92CS-22271
Fig.? - Average forward power dissipation Fig.8 - Average forward polNer dissipation
~ 150
I
~
~ 145 ~150
'"'" ~
i:' !oil
~ 140
~
:>
~ 135 ~ 130
'"~
~ 130
FOR UNIT WITH
~J~~~~i Fg:O~ARD
..
'"'"
<.> 120
060
SWITCHING
NEGLECTED
LOSSES ~
~ 125 ~ 110
a CURRENT WAVEFORM ;;!.
~ 120 0 f\........J\.. I F M :>
i 100
~ ~ 'II- I
~ 115
o
~t2-1
10 W 30 40 ~ ro
i
PEAK FORWARD CURRENT (I FM) - A
92CS-22272 92CS-22273
Fig.9 - Maximum allowable case temperature Fig. 10 - Maximum allowable case temperature
'5
!<140
~
:>
~ 130
~
..
"'~
120
<Xl
~
o
..
110
j
~ 10
..x
:>
:>
Fig. 11 - Maximum allowable case temperature Fig. 12 - Maximum allowable case temperature
forward voltage drop. forward voltage drop_
DIMENSIONAL OUTLINE
JEDEC 00-4
~
t-".,""", DF6C
MICAINSULATOA
:::~:~::;,~~:L1SHEO
C0:
HEATSINK
(CHASSISJ
6 OF30
~~~.L~~,;~~~n~~:;~
NmG.
m~~:~~G
<:===== (1.40mmIMAx
THICKNESS-O.OSSin
AYAILAOL{ATPU8LISHEO
HAROWAREPHICES
~
INCHES MILLIMETERS
NR59B
CONNECTOR~
~ ~i~ INSULATOR
-AVAlLAeLEATI'U8L1SHEO
SYMBOL
A
MIN.
-
MAX.
0.405
;.1IN.
-
MAX
1028
NOTES
AVAILA8LEAT PU8LISHEO HAADwAREPRICES b - 0.250 - 635 2

H"ROW"REOOA'CES 0 0.020 0.065 0.51 1.65
vo - 0505 - 12.82

~
~:~~~CK
NA38C
WASHER} 5UI'!'LIE."
OEYICE
00,
E
F,
0.265
0.423
0.075
0.424
0.438
0.175
6.74
10.75
1.91
10.76
11.12
4.44 ,
J 0.600 0.800 15.24 2.1.32
~ HEX.NUT
oM 0163 0.189 4.15 '80
N 0.422 0.453 10.72 1150
N, - 0.078 - 1.98
oT 0060 0.095 '.53 2.41
oW '0 32 INF.2A '032 iNF.2A 3

In the United Kingdom, Europe, Middle East, and Africa, mounting- 2 - 0.002 - 0.050
shown with your ReA sales representative or supplier. " - 0.006 - 0.152
1: Chamfer or unden;:ut on one or both sIdes of hellagonal base IS

ophonal.
2: Angular or,en~t1on and contour 01 Terminal No.1 IS optional.
3: ~::;~:~O~'~=:lo~:~
~;~~~E~~~:;lTread
Recommended torque: 15 Inchpounds.
Forward Polarity Reverse Polarity,

ID2412 Series) (D2412-R Seriesl

OO(]3LJI]
Solid State
Division 1N3889-1N3893
1N3889R-1N3893R
12-A" 50-to-400-V,
General-Purpose Types for High-CoJrrent Applications
Features:
Available in reverse-polarity versions: Low re,,~rserecovery current
1N3889R, 1N3890R, 1N3891R, low forward-voltage drop
1N3892R, 1N3893R
low-thermal-resistance hermetic
200 ns max. (I F = 1 A, I RM = 2 A max., see test circuit Fig. 2)
data bulletins: 6-A File No. 663 (02406 Series)
ReA types 1N3889 - 1N3893 and 1N3889R - 1N3893R are All types feature fast reverse-recovery time of 200 ns max.
diffusedjunction silicon rectifiers in a studtype hermetic These devices are intended for use in high-speed inverters
package. These devices differ only in their voltage ratings. choppers, high-frequency rectifiers, "free-wheel ing" diode
MAXIMUM RATINGS. Absolure-Maximum Values:
REVERSE VOLTAGE:
Repetitive peak 50 100 200 300 400 V
Non-repetitive peak 75 200 300 400 500 V
OC (Blocking) . . . .. . . 0. 50 100 200 300 400 V
FORWARD CURRENT (Conduction angle =' 180 .
half sine wave):
RMS IT C = 100oCI" 18 A
Average (TC = 100C) 12 A
At junction temperature IT J} = 150C:
For one cycle of applied voltage, 60 Hz 150 A
For ten cycles of applied voltage. 60 Hz 70 A
'STORAGE-TEMPERATURE RANGE . -65 to 175 c
'OPERATING IJUNCTIONI TEMPERATURE -65 to 150 c
STUD TORQUE:
Recommended . 15 in-Ib
MaXimum (DO NOT EXCEED) 25 in-Ib
*In accordance with JEDEC registration data.

Case temperature IS measured at center of any flat surface on the hexagonal head of the mounting stud.
LIMITS
MIN. MAX.
Reverse Current:
Static
For V R RM = max. rated value, IF = 0, T C = 25C .... .. . ......... IRM - 25 IlA
TC = 100C ............... - 3 mA
Dynamic
For single phase full cycle average, 10 = 12 A, T C = 100C .......... IR(AV) - 5 mA

At iF = 12 A, VRRM = rated value, TJ = 100C ......... ....... - VF(PK) - 1.5 V
At iF = 12 A, TJ = 25C .......... .... . . .. ... . .... . .. . .. .. . vF - 1.4 V

IFM = 1 A, IRM = 2 A max., TC = 25C .. . ., . .. . . ...... .. trr - 200 ns
Thermal Resistance (Junction-to-Case) ........................ ReJC - 1.5 C/W
!lO-n OUTPUT TO
OSCillOSCOPE .
tWITH RISE
T1MESOQljoS)
CONSTANT
VOLTAGE SUPPLY
(ADJUST fOR I A DC
THROUGH RECTIFIER
UNDER TEST
-APPRQX 30 V)

'~RI SELECTED rOGlvE MAXIMUM

(APPROlCIMATElY 14 nl
IF Ir R2 I n,IOW NON-INDUCTIVE OR TEN

o 10 n, I 'N,''I'. CARBON COMPOSITION RESISTORS
CONNECTEO IN PARALLEL
92c ZZI1'JR'
. IRM-
I,
OSCILLOSCOPE OISPLAY OF REVERSE-RECOVERY TIME
DIMENSIONAL OUTLINE
JEDEC 00-4
t--,,"'""'"
~MICAINSUlATOR
~
OFOC
:::~:~:;;,~~:L1SHfO
U
HE.TSINK
(CHASSISl
6
~:m~~s:~~G
OFJD
~~~.L?~.;;~~n~~:'~
"=====~. THICKNESS
(1.40mm)
"O.05Sm.
MAX
",V'l"8U",TPUBllSHEO
H ROW ..REPAIl;es
INCHES MILLIMETERS
NR59B
CONNECTOR ~
~
-
~~;~
1I . ,L
INSULATOR
..8LE ..TPU8LISHEO

b
-
-
0.405
0.250
-
-
10.28
6.35
..VA'LA8LEATPU8LISHEO HAROWAREPRlces
0 0.020 0.065 0.51 1.65

HAAOWAREPRICES
.0 - 0.505 - 12.82
.0, 0.265 0.424 6.74 10.76
E 0.423 0.438 10.75 11.12
~
~
NR'og.
STAALOCK WASHER
}
SUPPLIED F, 0.075 0.175 1.91 4.4,
J 0.600 0.800 15.24 20.32
~ NA38C DEI/ICE.
.M 0.163 0.189 4.15 4.80
~ HEX.NUT
N 0.422 0.453 10.72 11.50
N, - 0.078 - 1.98
.T 0.060 0.095 '.53 2.41 ,
.w 11>32iNF.,. '032 iNF-,.
In the United Kingdom, Europe, MIddle East, and Africa, mounting- 2 - 0.002 - 0.050
2, - 0.006 - 0.152
NOTE:
1: oW's pitch diameter of COlitedthr s. AE F: Screw Thr*
St.d.rds for Federal Services, H.ndbook H 28 Pac'tI.
Recommended tOf"que: 15 inch-pound$.

(1 N3889 - 1 N3893) (1 N3889R - 1 N3893R)

u~~~u ~enes
D2520-R Series
20-A, 50-to-600-V,
* Fast-Recovery Silicon Rectifiers

G,n",'~Pu,po" Typ" to' High~Cun'ntAppli"tion,
Features:
Available in reverse-polarity versions: - Low reverse-recovery current
D2520A-R, D2520B-R, D2520C-R, Low forward-voltage drop
D2520D-R, D2520F-R, D2520M-R Low-thermal-resistance hermetic
0.35 /1S max. (I FRM = 63 A peak, see test circuit Fig.1)
0.2/1s max. (I RM = 1 A, I RM = 2 A max., see test circuit Fig.2)
RCA D2520 series and D2520R series are diffused-junction covery characteristics that reduce the generation of R F I and
silicon rectifiers in a stud-type hermetic package. These voltage transients.
devices differ only in their voltage ratings. These devices are intended for use in high-speed inverters,
choppers, high-frequency rectifiers, "free-wheel ing" diode
circuits, and other highfrequency applications.
D2520F D2520A D2520B D2520C D2520D D2520M

(43899)* (43900'* (349011* (43902'* (43903'* (43904)*
D2520FR D2520AR D2520BR D2520CR D2520DR D2520M-R
(43899RI* (43900R'* (43901 R)* (43902R'* (43903RI* (43904R'*
REVERSE VOL TAGE,
half sine wave):
RMS ITC " 100 c)e 0
IFIRMS) 30 A
Average IT C " 1000CIe 10 20 A
Peak-surge (non-repetitive): IFSM
At junction temperature (T Jl = 150C:
For one-half cycle of applied voltage, 60 Hz (8.3 ms) 300 A
Peak (repetitive) IFRM 100 A
STORAGETEMPERATURE RANGE -40 to 165 c
OPERATING IJUNCTION) TEMPERATURE 150 c
STUD TORQUE,
Recommended 30 in-lb
Maximum 100 NOT EXCEED) 50 in-Ib
LIMITS
MIN. MAX.
Reverse Current:
Static
For VRRM == max. rated value, IF = 0, TC == 25C IRM - 0.05 ~A
TC = lOOoC - 6 mA

At iF = 20 A, T J = 25C. vF - 1.4 V

IFM = 63 A, -diF/dt = 25 A/~s,
pulse duration = 7.5 ~s, TC = 25C - 0.35 ~s
t"
I FM = 1 A, I RM = 2 A max., T C = 25C. - 0.2
Thermal Resistance (Junction-ta-Case) ROJC - 1 C/W
RCA
IN3194
OR
RCA
012018
t
~ RECTIFIER
UNDER TEST
AMPLITUDE
50-a OUTPUT *
0-130 V
AC
TO OSCILLOSCOPE '*
501NI} (WITH RISE
RM
O.IINll J TIME :S 0.01 fLS)
TRIGGER
SIGNAL TO
J OSCILLOSCOPE
NOTES:
'* - ADJUST FOR CURRENT WAVEFORM SHOWN AT LEFT
** UNITS INTERCONNECTED WITH RG - 58U CABLE WITH

50-0 TERMINATING RESISTOR AT INPUT
TERMINALS OF OSCilLOSCOPE.
50-a OUTPUT
TO OSCILLOSCOPE**
(WITH RiSE
TIME:SO.OI ~S)
CONSTANT
UNDER TEST -APPROX. 30 V)

TERM I NALS OF OSCILLOSCOPE
RI SELECTED TO GIVE MAXIMUM

IRM NO GREATER THAN Z A
(APPROXIMATELY 1.4 n)
R2 In, 10 W NON-I NDUCTIVE OR TEN

10 n, I W, 1% CARBON COMPOSITION RESISTORS
IR
OSCILLOSCOPE DISPLAY OF REVERSE-RECOVERY TIME
350 JUNCTION TEMPERATURE (TJ): 150C 1000 JUNCTION TEMPERATURE {TJ )=25C
.J\..f\.. "I 4
6
I I
;;; .. 300
\
W
8.3ms
:u.
-
I-
2
100
10--.. MAXIMUM
TyPiCAL
~1250 i:'i
~~
1:; .
\ '"'"
6
4
/
Cf;: 200 13 2
ZZ
ow
z'" "- ...... 0
'""
~
10
'/
~~
"'u
~~
~:t
..
"'""-
wo
150
100 -- Ii'
'"=>
~
"
I-
Z
I
6
4
6
50 4
":;;;;,: 2
I
0 0.1 III
2 4 6
2 4 6
o I
INSTANTANEOUS
2 3
FORWARD VOLTAGE DROP {vF)-V
4
92C5-22181
FigA - Forward current vs. forward

voltage drop.
~ FOR UNIT WITH TYPICAL FORWARD URRENT WAVEFORM
~I CURRENT WAVEFORM
I VOLTAGE DROP
..
!30 SWITCHING LOSSES NEGLECTED O~IFM O~IFM
-t'.~-l
~30
~z
Q 25
-t't~j ~
~ 25
~ ~
jjl in 30-A(RMS)
i5 20 u> 20
<; o~t:J LIMIT
a: a: o~
~ 15 ~ 15

VOLTAGE DROP
40 60 80 100 120 140 160 180 40 60 80 100 120 140 160 180
PEAK FORWARD CURRENT (I FM) - A PEAK FORWARD CURRENT (IFM) - A
92CS-22182 92CS-22183-
Fig.5 - Average forward power dissipation Fig.6 - Average forward power dissipation
forward voltage drop. forward voltage drop_
f
onn-
FOR UNIT WITH TYPICAL FORWAR ~~~T~~~ W~~~pMAXIMUM FORWARD CURRENT WAVEFORM
~ VOLTAGE DROP
i 60 SWITCHING LOSSES NEGLECTED ~ 60 SWITCHING LOSSES NEGLECTED IFM
cE
z
50
i
'" .
~ 50 ~.~~
jjl in
a 40 o
a: a:
~ 3 ..
~
30-A IRMS)
LIMIT
20 40 60 80 tOO 120 140 160 180

PEAK FORWARD CURRENT (IFM)-A
92C5-22184 92CS-221~5
Fig. 7 - Average forward PO'rNefdissipation Fig.8 - Average forward power dissipation
fOR UNIT WITH TYPICAL FORWARD lr( FOR UNIT WITH MAXIMUM FORWARD
VOLTAGE DROP ~ VOLTAGE DROP
~ 150 SWITCHING LOSSES NEGLECTED
DUn_ F"~C7i
0" ( i:!

"/12)"'0.0,5 ~ 140
~
; 130
;'l
w 120
Oil
125
~
gilD
oJ
CURRENT WAVEFORM
120~ '"
:> 100
-1 " I- I '"x
115 ~t-1
o w ~ 60 00 100 120 '"
PEAK FORWARD CURRENT (IFM) - A
92CS- 22186 9ZCS-22187
Fig.9 - Maximum allowable case temperature Fig. to - Maximum allowable case temperature
Orrn-1FM orrn-1FM
!;' CURRENT WAVEFORM !;' CURRENT WAVEFORM
~ ~
'"<r --h f-- I '"
~
"
<{
~ 0.05
'2 -I
~
~,~~
~
.... ~
....
'"'" '"'"
;3 <{
<.>
'"-'m '"cr:
~
j tlO
,.
<{
110
<{ ~
:> :>
=> 100 => 100
:> :>
X X
<{ <{
:> 90 90
o 20 40 60 80 100 120 140 160 180 0
PEAK FORWARD CURRENT (In.1)-A
92CS-22188 92CS-22189
Fig.1T - Maximum allowable case temperature Fig. 12 - Maximum allowable case temperature
DIMENSIONAL OUTLINE
JEDEC 00-5
INCHES MilLIMETERS
A - 0.450 - '1.43
b - 0.375 - 9.52 2
c 0.030 0.080 0.77 2.03
"D - 0.794 - 20.16
oD, - 0.667 - 16.94
E
F,
0.669
0.115
0.688
0.200
17.00
2.93
17.47
5.08 ,
J 0.750 1.000 19.05 25.40
OM 0.220 0.249 5.59 6.32
N 0.422 0.453 10.72 11.50
N, - 0.090 - 2.28
S 0.156 - 3.97 -
oT 0.140 0.175 3.56 4.44
hardware policies may differ; check the availability of all Items ,
OW
-
1/4-28
I
UNF 2A
0.002 -
1/4-28 UNF 2A
0.050
3

"
- 0.006 - I 0.152
NOTES:
1: Chamfer or undercut on one or both Sides of hexagonal base is
optional
2: Angular orientation and contour of Terminal No.1 is optional.
3: oW ISpitch diameter 01 coated threads. REF: ScrewThread
Standards for Federal Services. Handbook H 28 Part I
Recommended torque: 30 inchpounds.

(02520 Series) (02520-R Series)

OOa5LJD
Solid State 1N3899-1N3903
Division
1N3899R-1N3903R
20-A. 50-to-400-V,
General-Purpose Types for High-Current Applications
Features:
1 N3899R, 1 N3900R, 1 N3901 R, Low forward-voltage drop
1N3902R,1N3903R
Lowthermalresistance hermetic
200 ns max. (I RM = 1 A, I RM = 2 A max., see test circuit Fig. 2)
Forward-polarity Reverse-polarity For data on other RCA fast recovery rectifiers, refer to the following RCA
I1N38991 N39031 11N3899R-1 N3903R)
JEoEC 00-5
data bulletins: 6-A File No. 663 (02406 Series)
ReA types 1 N3899-1 N3903 and 1N3899R-l N3903R are All types feature fast reverse-recovery time of 200 ns max.
diffused-junction silicon rectifiers in a stud-type hermetic These devices are intended for use in high-speed inverters,
package_ These devices differ only in their voltage ratings. choppers. high-frequency rectifiers, "free-wheeling" diode
REVERSE VOLTAGE:
*Repetitive peak '." .................... 50 100 200 300 400 V
*OClBlockingl . 50 100 200 300 400 V
FORWARD CURRENT (Conduction angle'" 180,
half sine wave):
RMS IT C = 100 C)- -30 A
o
.~ Average (T C = 100 CI 20 A
Peak-surge (non-repetitive): 0
At junction temperature IT Jl = 150 C:

For ten cycles of applied voltage, 60 Hz 120 A
Peak (repetitive) ......... 100 A
'OPERATING IJUNCTION) TEMPERATURE -65 to 150 c
STUD TORQUE:
*Recommended . 30 in-Ib
Maximum 100 NOT EXCEED) . 50 in-Ib
*In accordance with JEDEC registration data.

MIN. MAX.
Reverse Current:
Static
For VRRM = max ..rated value, IF = 0, TC = 25C ............. .. . IRM - 50 IlA
TC = 100C . . . .. . . . . . ... .. - 6 mA
Dynamic
For single phase full cycle average, 10 = 20 A, T C = 100C .......... IR(AV) - 10 mA

At iF = 20 A, VRRM ,. rated value, TJ = 100C .................. VFIPK) - 1.5 V
At iF = 20 A, T J = 25 C ........ - .. ........................
, vF - 1.4 V

IFM = 1 A, I RM = 2 A max., TC = 25C .................. .. . trr - 200 ns
Thermal Resistance IJunction-toCase) ......... - .............. .. . ROJC - 1.5 C/W
~O-Q OUTPUT TO
OSCILLOSCOPE
(WIlH RiSE
TIME:!: 0.01 ,.SJ
CONSTANT
VOLTAGE SUPPLY
(ADJUST fOR I A DC
THROUGH RECTIFIER
UNDER TEST
-APPROX. 30 V J

TERMINALS Of OSCILLOSCOPE
'~Rl SELECTED TO GIVE MAXIMUM

:rRM NO GREATER THAN 2 A
{APPROXIMATELY 14 QJ
IF tft R2 I n,lOW NOH-INDUCTIVE OR TEN

o 10 n, I W, 1"Ko CARBON COMPOSITION RESISTORS
I.M--
I.
DIMENSIONAL OUTLINE
JEDEC 00-5
~ ,"",""'""
@)- ~~~: INSULATOR
,,""'A'lA'LEATPU8lISHfD
H ROWA,AEPRICES
GJ (~~:~~~~K
OF3H
TEFLON' INSULATING BUSHING
0----
DF6B
MICA INSULATOR
.v t .
aLEAT
HAROWA,REPl'UCES
PU8L1SHED
----0 0
$H~C~~':~ ~nO~g6~oi;;711.53
a.VAll"llEA,rpU8LISHED
HA,AOW"REPRICES
mm) MAX
SYMBOL
b
MIN.
-
-
INCHES
MAX,
0.450
0.375
MILLIMETERS
MIN.
-
-
MAX.
11.43
9.52
NOTES
0.030 0.080 0.77 2.03

00 - 0.794 - 20.16
~~~~CTOA~
00, - 0.667 - 16.94
"V,",'l eUATPU8lISH[O @.-- ~~~~O~ASHER } SUPPLIED E 0.669 0.688 17.00
2.93
17.47
"
J
0.115
0.750
0.200
'.000 19.05
5.08
25.40
~--NA38B DEvICE oM 0.220 0.249 5.59 6.32
~- HEX,NUT
N 0.422 0.453 10.72 11.50
N, - 0.090 - 2.28
S 0.156 - 3.91 -
oT
OW
0.140 0.115
1I...iUNF2A
3.56 4.44
1/4TUNF 2A
,
Z - 0.002 - 0.050
In the United Kingdom, Europe, .tv1lddle East, and Africa, mounting-
Z, - 0.006 - 0.152
NOTE
1 W IS pilCh diameter of coed threads. REF: SCre..
Thread
Standards tor Federal Services, Hal'ldbook H 28 Part I
Reeommended torque: 30 inchpounds.
(1 N3899-1N3903) (lN3899R -lN3903R)
No.1 (Lug) - Anode NO.1 (Lug) - Cathode
No.2 (Stud) - Cathode NO.2 (Stud - Anode
[]1(]5LJD
Solid State 1N3909-1 N3913
Division
1N3909R-1N3913R
30-A, 50-to-400-V,
General-Purpose Types for High-C'Jrrent Applications
Features.-
1N3909R, 1N3910R, 1N3911R, Low forward-voltage drop
1N3912R,1N3913R Low-thermal-resistance hermetic
Forward-polarity Reverse-polarity 200 ns max_ (I RM = 1 A, I RM = 2 A max., see test circuit Fig. 2)
11N3909-1 N39131 I1N3909R-1N3913R)
JEOEC 00-5 data bulletins: 6-A File No. 663 (02406 Series)
ReA types 1N3909 - 1N3913 and 1N3909R -1N3913R are All types feature fast reverse-recovery time of 200 ns max.
diffused-junction silicon rectifiers in a stud-type hermetic These devices are intended for use in highspeed inverters,
package. These devices differ only in their voltage ratings. choppers, high-frequency rectifiers, "free-wheeling" diode
REVERSE VOI_TAGE,
*Repetitive peak "," 50 100 200 300 400 V
*DC (Blocking) ... 50 100 200 300 400 V
FORWARD CURRENT (Conduction angle =. 180,
half sine wave):
o
RMS IT C = 100 CI' 45 A
* Average IT C = , aOoC)'" 30 A
* Peak-surge lnon-repetitive>:
At junction temperature IT}:- 150C:
For ten cycles of applied voltage. 60 Hz 160 A
'OPERATING (JUNCTION) TEMPERATURE -65 to 150 c
STUD TORQUE,
30 in-Ib
50 in-Ib
*In accordance with JEOEC registration data.

LIMITS
MIN. MAX.
Reverse Current:
Static
For V R RM ~ max. rated value, I F ~ 0, T C = 25C ................ IRM - 80 /lA
TC = 100C ... . ........... - 10 mA
Dynamic
For single phase full cycle average, 10 = 30 A, T C = 100C .......... IRIAV) - 15 mA

At iF = 30 A, VRRM = rated value, TJ = 100C ............... .. . VF(PK) - 1.5 V
At iF = 30 A, T J = 25 C ............... . .. . ..... _.0 ... vF - 1.4 V

IFM = 1 A, IRM = 2 A max., TC = 25C ................. - . .. trr - 200 ns
Thermal Resistance IJunction-to-Case) ..... . . - . .. . ......... ..... . ReJC - 1 C/W
50 - n OUTPUT TO
OSCillOSCOPE"
(WITH RiSE
TlME'5001,.SI
CONSTANT
VOLTAGE SUPPLY
{ADJUST FOR I A DC
THROUGH RECTIFIER
UNDER TEST
-APPRQX 30 v J
UNITS INTERCONNECTED WITH FlG-SSU CABLE WITH

50-a TERMINATING RESISTOR AT INPut
'~RI SELECTED rOGIVE MAXIMUM

IRM NO GREATER THAN 2 A
(APPROXIMATELY 14 nl
IF '.. R2 I n,IOW NON-INDucnve: OR TEN

o 10n, I W,I% CARBON COMPOSITION RESISTORS
92(101-22179111
IRM-
IR
OSCILLOSCOPE DISPLAY OF REVERSE-RECOVERY TIME
----------------------File
No.
7?~
1- <j>W "
INCHES MILLIMETERS
SYMBOL MIN MAX MIN MAX. NOTES
A - 0.50 - 11.43
b - 0375 - 9.52
0.030 ooeo 071 2.03
vD - 0194 - 2016
,.D, - -
, 066.
0667
0688 11.00
'694
17.47
"
J
0.115
0750
0200
, 000
293
1905
508
25.40
,M 0220 0249 559 6.32
N 0422 0453 1072 1150
N, - 0090 - 2.28
S o i56 - 397 -
..-,1 0140 0175 3.56 '.44
"W 1I4'2iUNF 2A 1/4'j UN' 2A
,
In the United Kingdom, Europe, Middle East, and Africa, mounting- 2 - 0002 - OOSO
hardware policies may differ; check the availability of all items 2, - 0006 - 0.152
NOTE
Fig. 3 - Suggested mounting hardware. 1 oW,~ pitch d,ameter of coated threads REF: Screw-Thread
Siandard$ for Federal ServICes, Handbook H 28 Pa'l I
Recommended torque: 30 ,nchpounds

(lN3909 -lN3913) (1 N3909R - 1N3913R)
NO.1 (Lug) - Anode NO.1 (Lug) - Cathode
DDJ]sLlD
Solid State 02540 Series
Division
02540-R Series
40-A, 50- to- 600 V,

Fast- Recovery
, I
Cathode
Silicon Rectifiers

Forward-polarity Reverse-polarity
(02540 Series) (0254D-RSeries) D2540A-R, D2540B-R, D2540D-R, Low forward-voltage drop
D2540F-R, D2540MR
JEDEC 005 Low-thermal-resistance hermetic package
Fast reverse-recovery time -
0.35 I./smax. from 125 A peak
RCA D2540 series and D2540-R seriest inclusive, are

diffused-junction-type silicon rectifiers in a stud-type her-
These devices are intended for use in high-speed inverters,
metic package. These devices differ only in their voltage
choppers, high-frequency rectifiers, "free-wheeling" diode
ratings.
All types feature fast reverse-recovery time (0.35 I./S max.
from 125 A peak) with "soft" recovery characteristics that
D2540F D2540A D2540B D2540D D2540M

(40956)* (40957)* (40958)* (R0959)* (40960)*
D2540F-R D2540A-R D2540B-R D2540D-R D2540MR
(40956R)* (40957R)* (40958R)* (40959R)* (40960R)*
Repetitive peak . VRRM 50 100 200 400 600 V

Non-repetitive peak. VRSM 100 200 300 600 800 V
FORWARD CURRENT (Conduction angle = 180~
half sine wave):
RMS (TC = 1000CI- ............ IF(RMS) ..
Average (T C = 1OOOC)- 10
60
40 .. A
A
At junction temperature (TJ) = 1500C
For one-half cycle of applied voltage, 60 Hz
(8.3 ms) IFSM 4 700 A
Peak (repetitivel IFRM 4 195 .. A
TEMPERATURE RANGE:
Storage and Operating (Junction) 4 40 to 150 .. C
LIMITS
MIN. MAX.
Reverse Current:
Static
For VRRM = max. rated value, IF = 0, TC = 25C - 100 i.J.A
IRM
TC = 100C - 2.5 mA

At iF = 100 A, TJ = 25C, See Figure 2. vF - 1.8 V
For circuit shown in Figure 1:
At I FRM = 125 A, dildt = 25 A/i.J.s, pulse duration = 15 i.J.S
TC = 25C trr -- 0.35 i.J.S
Thermal Resistance (JunctiontoCasel ROJC - 0.9 C/W
AMPLITUDE
O-130V
1:3~:4n
OR
RC A
012018
T
2.25 p.H"*
133}<F
RECTIFIER
UNDER TEST
50-n OUTPUT
TO OSCILLOSCOPE
**
AC 5O(NIl (WITH RiSE
RM ]
TIME :s: 0.01 fLS)
ReA OIlNll
D260lN
TRIGGER
J
SIGNAL TO
OSCILLOSCOPE
NOTES
ALL RESISTANCE VALUES ARE IN OHMS
RM MONITORING RESISTOR

TERMINALS OF OSCillOSCOPE.
CA5IE
n_RT.- TJ" C
~
c
~
..
I
.....

100
I
TYPICAL/
I v J.....-r
MAXIMUM

Z
f.
I'
a II
Ii! 10
1/
~
~

il CURRENT WAVEFORM
! I
OJ\.JC.FRM
i
z
I jt~f-L
OJ 100 200 300 400
I 2 3 . PEAK FORWARD CURRENT (IFRM )-A
INSTANnNEOUS FORWAROVOLTAGE DROP hF)-V
921:5-19186
Fig.3-Average forward-power dissipation for

maximum forward-voltage-drop unit.
FOR MAXIMUM FORWARD-VOLTAGE-DROP UNIT

SWITCHING lOSSES NEGLECTED
CU NW
..IU"" -{ F'"
o lJ
" '2
CURRENT WAVEFORM
OJ\.JC.FRM
Id- I
tOO 2DO X)() 400
PEAK FORWARD CURRENT (I FRM) - A
FOR TYPICAL FORWARD-VOLTAGE-DROP

UNIT SWITCHIHG LOSSES NEGLECTED
CURRENT
WAVEFORM
0J1...J -IF.'"
~t\';j..
<t.~'i'
o
0,. OJ\.JC.FRM
200 300 tOO 200 300

t~L 400
PEAK FORWARD CURRENT (IFRM)-It
PEAk FORWARD CURRENT t I FRWI - A
CURRENT WAVEFORM
0JU"" IFRM
t,~.I-L
300 400
IIF) -A
92CS-19192RI 92CS-t9t93RI
Fig.8-Maximum allowable case temperature Fig.9-Maximum allowable case temperature

for tvpical forward-voltage-drop unit. for maximum forwardvoltagedrop unit.
~
~ 70
-'
'";
.. o
0 00 0
::J o ."J .~". CURRENT
o .~ WAvmlIIII
.~
~ oJ'1I -IF'"
~1r.1-
20
~
0 K>O 200 300 4CX)
PEAf( FORWARDCURRENT (IF,..)-A
"forward Polarity Reverse Polarity

(02540 Series) (02540-R Seri'os)
No.1 (Lugl - Anode No.1 (Lug) - Cathode

No.2 (Stud) - Cathode No,2 (Stud I - Anode

INCHES MILLIMETERS
YMBOl MIN. MAX MIN. MAX. NOTES

A 0450 n.4
b - 0.315 - 9.53 2
- -
.0
E
-
0.667
0.080
0.667
0.687
-
16.94
2.03
16.94
17.45
F 0.115 0200 2.92 5j08
F, 0.060 - 1.52 -
J - 1.000 - 25.40
I 0.156 - 3." - 4
.M 0.220 0.249 5.59 6.32 1
0.422 0.453 10.12 11.51
.'
N
1 Completl t"'reads to extend to wil"'in 2-112 t"'reads 01 sealing
0.140 0.175 3." 4.45
pl;tne.
W 1/4-28 UNF 2A 1/4-28 UNF 2A 1,3
2. Afl9.llar ()(ientltion olt"'e tll'"minal is undelined.
3. 1/4-28 UNF-2A. Maximum pitc'" diameler of plaled t"'readss"'al!
be basic pilC'" diametll'" 1.2268 inc..5.14 mm) ref. (screw t"'read
mndards for Fecletal Services 1951) H;tndbook H28 1951 PI
4. Minimumftat
Diacs
oornLJD
Solid State
Division
D3202Y
D3202U
Plastic-Packaged Two-Terminal Trigger Devices for

Applications in Military, Industrial, and Commercial Equipment
For critical triggering applications requiring narrow breakover

voltage range (29-35V)-D3202Y
Typical breakover voltage: V(BO) = 32 V
Low breakover current (at breakover voltage): I(BO) = 251lA max.
High peak pulse current capability
Breakover voltage symmetry:
\+V(BO) I-I-V(BO) I= 3 V max.
RCA D3202Y (45411)' and D3202U (45412)' are all- MAXIMUM RA TI NGS, Absolute-Maximum Values:
diffused, threelayer, two-terminal devices in an axial-lead DEVICE DISSIPATION:
plastic package designed specifically for triggering thyristors. At case temperature up to 400C .1 W
Both units exhibit bidirectional negative-resistance charac At case temperatures above 40o'C Derate 0.016 WloC
teristics.
TEMPERATURE RANGE:
These diacs are intended for use in thyristor phase-control
Storage -40 to +150 c
circuits for lamp-dimming, universal-motor speed control,
and heat controls. Their small size and plastic package of
Operating (Junction) -40 to +100 c
high insulation resistance make these diacs especially suitable LEAD TEMPERATURE (During Soldering)
for applications in which high packing densities are At distance.2: 1/16 in. (1.59 mml from case
employed. for 10 s max.
o 0.02 0.04 0.06 o.oe 0.1

TRIGGERING CAPACITANCE ICT)-~F
.rC:S-20101
LIMITS
CHARACTE R ISTI C SYMBOL TEST CONDITIONS D3202Y D3202U UNITS
MIN. MAX. MIN. MAX.
Breakover Voltage
V(BO) 29 35 25 40 V
(Forward or Reverse)
Breakover Voltage
I +V(Bo)I-I-V(BOI! - 3 - 3 V
Symmetry
VSUPPL Y = 30 VRMS,
Peak Output Current
(See Figs. 2, 3, & 5.l
ipk CT=O.I/lF, 190 - 190 - mA
RL = 20 Do
Peak Breakover Current I(BO) At breakaver voltage - 25 - 25 /lA
VSUPPL Y = 30 VRMS,
Dynamic
Voltage
Breakback
I !'>V I CT = 0.1 /IF
RL = 20 Do
9 - 9 - V
Thermal Impedance
IOJA - 60 - 60 C/W
Junction-to-ambient
,
~ OUTPUT PULSE
CASE TEMPERATURE
WIDTH ~O~.
(Tel ~40C
I
2
~
~ I.
\
~
z
\
''"""
I.
~
u
..
I.'
"~ 1.2
SAFE OPERATING SINUSOIDAL WAVE
0 "~ I
AREA
I
.~~~. 0 .
\
X
SQUAR1E WAvE _
~ 0 .
j
~
'"..
~ 0.'
0.2
0
. -.
"
DIMENSIONAL OUTLINE
D3202Y & D3202U
JEDEC DO-15
FOR TYPES
INCHES MilLIMETERS
SYMBOL
MIN MAX MIN MAX
0035 0.686 0.889

"
0.027
.0 0.104 0140 2.64 3.56

G 0.230 0.300 5.84 7.62
I 1.000 - 25.40 -
I, - 0050 - 1_27
Application Notes
Solid State Devices
OOClliLm
Solid State Operating Considerations
Division
1CE-402
Operating Considerations for

RCA Solid State Devices
Solid state devices are being designed into an increasing many different operating conditions. When incorporating
variety of electronic equipment because of their high these devices in equipment, therefore, designers should
standards of reliability and performance. However, it is anticipate the rare possibility of device failure and make
essential that equipment designers be mindful of good certain that no safety hazard would result from such an
engineering practices in the use of these devices to achieve occurrence.
the desired performance. The small size of most solid state products provides
This Note summarizes important operating recommen- obvious advantages to the designers of electronic equipment.
dations and precautions which should be followed in the However, it should be recognized that these compact devices
interest of maintaining the high standards of performance of usually provide only relatively small insulation area between
solid state devices. adjacent leads and the metal envelope. When these devices
The ratings included in RCA Solid State Devices data are used in moist or contaminated atmospheres, therefore,
bulletins are based on the Absolute Maximum Rating supplemental protection must be provided to prevent the
System, which is defined by the following Industry Standard development of electrical conductive paths across the
(JEDEC) statement: relatively small insulating surfaces. For specific information
Absolute-Maximum Ratings are limiting values of opera- on voltage creepage, the user should consult references such
ting and environmental conditions applicable to any electron as the J EDEC Standard No. 7 "Suggested Standard on
device of a specified type as defined by its published data, Thyristors," and JEDEC Standard RS282 "Standards for
and should not be exceeded under the worst probable Silicon Rectifier Diodes and Stacks".
conditions. The metal shells of some solid state devices operate at the
The device manufacturer chooses these values to prOVide collector voltage and for some rectifiers and thyristors at the
acceptable serviceability of the device, taking no responsi- anode voltage. Therefore, consideration should be given to
bility for equipment variations, environmental variations, and the possibility of shock hazard if the shells are to operate at
the effects of changes in operating conditions due to voltages appreciably above or below ground potential. In
variations in device characteristics. general, in any application in which devices are operated at
The equipment manufacturer should design so that voltages which may be dangerous to personnel, suitable
initially and throughout life no absolute-maximum value for precautionary measures should be taken to prevent direct
the intended service is exceeded with any device under the contact with these devices.
worst probable operating conditions with respect to supply- Devices should not be connected into or disconnected
voltage variation, equipment component variation, equip- from circuits with the power on because high transient
ment control adjustment, load variation, signal variation, voltages may cause permanent damage to the devices.
environmental conditions, and variations in device charac-
teristics.
It is recommended that equipment manufacturers consult In common with many electronic components, solid-state
RCA whenever device applications involve unusual electrical, devices should be operated and tested in circuits which have
mechanical or environmental operating conditions. reasonable values of current limiting resistance, or other
forms of effective current overload protection. Failure to
GENERAL CONSIDERATIONS observe these precautions can cause excessive internal heating
The design flexibility provided by these devices makes of the device resulting in destruction and/or possible
possible their use in a broad range of applications and under shattering of the enclosure.
TRANSISTORS WITH FLEXIBLE LEADS range of power-dissipation ratings and a variety of package
Flexible leads are usually soldered to the circuit configurations. The following paragraphs provide guidelines
elements. It is desirable in all soldering operations to provide for handling and mounting of these plastic-package devices,
some slack or an expansion elbow in each lead, to prevent recommend forming of leads to meet specific mounting
excessive tension on the leads. It is important during the requirements, and describe various mounting arrangements,
soldering operation to avoid excessive heat in order to thermal considerations, and cleaning methods. This informa-
prevent possible damage to the devices. Some of the heat can tion is intended to augment the data on electrical character-
be absorbed if the flexible lead of the device is grasped istics, safe operating area, and performance capabilities in the
between the case and the soldering point with a pair of pliers. technical bulletin for each type of plastic-package transistor
or thyristor.
TRANSISTORS WITH MOUNTING FLANGES
The mounting flanges of JEDEC- type packages such as Lead-Forming Techniqup.s
the TO-3 or TO-66 often serve as the collector or anode The leads of the RCA VERSAWATT in-line plastic
terminal. In such cases, it is essential that the mounting packages can be formed to a custom shape, provided they are
flange be securely fastened to the heat sink, which may be not indiscriminately twisted or bent. Although these leads
the equipment chassis. Under no circumstances, however, can be formed, they are not flexible in the general sense, nor
should the mounting flange be soldered directly to the heat are they sufficiently rigid for unrestrained wire wrapping
sink or chassis because the heat of the soldering operation Before an attempt is made to form the leads of an in-line
could permanently damage the device. package to meet the requirements of a specific application,
Such devices can be installed in commercially available the desired lead configuration should be determined, and a
sockets. Electrical connections may also be made by lead-bending fixture should be designed and constructed. The
soldering directly to the terminal pins. Such connections may use of a properly designed fixture for this operation
be soldered to the pins close to the pin seals provided care is eliminates the need for repeated lead bending. When the use
taken to conduct excessive heat away from the seals; of a special bending fixture is not practical, a pair of
otherwise the heat of the soldering operation could crack the long-nosed pliers may be used. The pliers should hold the
pin seals and damage the device. lead firmly between the bending point and the case, but
During operation, the mounting-flange temperature is should not touch the case.
higher than the ambient temperature by an amount which When the leads of an in-line plastic package are to be
depends on the heat sink used. The heat sink must have formed, whether by use of long-nosed pliers or a special
sufficient thermal capacity to assure that the heat dissipated bending fixture, the folloWing precautions must be observed
in the heat sin k itself does not raise the device moun ting- to avoid internal damage to the device:
flange temperature above the rated value. The heat sink or
chassis may be connected to either the positive or negative I. Restrain the lead between the bending point and the
supply. plastic case to prevent relative movement between the
[n many applications the chassis is connected to the lead and the case.
voltage-supply terminal. If the recommended mounting 2. When the bend is made in the plane of the lead
hardware shown in the data bulletin for the specific (spreading), bend only the narrow part of the lead.
solid-state device is not available, it is necessary to use either 3. When the bend is made in the plane perpendicular to that
an anodized aluminum insulator having high thermal con- of the leads, make the bend at least 1/8 inch from the
ductivity or a mica insulator between the mounting-flange plastic case.
and the chassis. [f an insulating aluminum washer is required, 4. Do not use a lead-bend radius of less than 1/16 inch.
it should be drilled or punched to provide the two mounting 5. Avoid repeated bending of leads.
holes for the terminal pins. The burrs should then be
The leads of the TO-220AB VERSAWATT in-line
removed from the washer and the washer anodized. To insure package are not designed to withstand excessive axial pull.
that the anodized insulating layer is not destroyed during
Force in this direction greater than 4 pounds may result in
mounting, it is necessary to remove the burrs from the holes
permanent damage to the device. If the mounting arrange-
in the chassis. ment tends to impose axial stress on the leads, some method
It is also important that an insulating bushing, such as of strain relief should be devised.
glass-filled nylon, be used between each mounting bolt and
Wire wrapping of the leads is permissible, provided that
the chassis to prevent a short circuit. However, the insulating
the lead is restrained between the plastic case and the point
bushing should not exhibit shrinkage or softening under the
of the wrapping. Soldering to the leads is also allowed. The
operating temperatures encountered. Otherwise the thermal
maximum soldering temperature, however, must not exceed
resistance at the interface between transistor and heat sink
2750C and must be applied for not more than 5 seconds at a
may increase as a result of decreasing pressure.
distance not less than 1/8 inch from the plastic case. When
PLASTIC POWER TRANSISTORS AND THYRISTORS wires are used for connections, care should be exercised to
RCA power transistors and thyristors (SCR's and triacs) assure that movement of the wire does not cause movement
in molded-silicone-plastic packages are available in a wide of the lead at the lead-to-plastic junctions.
The leads of RCA molded-plastic high-power packages 7. Use insulating bushings to prevent hot-creep problems.
are not designed to be reshaped. However, simple bending of Such bushings should be made of diallphthalate, fiber-
the leads is pe,mitted to change them from a standard glass-filled nylon, or fiberglass-filled polycarbonate.
vertical to a standard horizontal configuration, or conversely. The maximum allowable power dissipation in a solid
Bending of the leads in this manner is restricted to three state device is limited by the junction temperature. An
90-degree bends; repeated bendings should be avoided. important factor in assuring that the junction temperature
Mounting remains below the specified maximum value is the ability of
Recommended mounting arrangements and suggested the associ~ted thermal circuit to conduct heat away from the
hardware for the VERSA WAIT transistors are given in the device.
data bulletins for specific devices and in RCA Application
When a solid state device is operated in free air, without a
Note AN-4124. When the transistor is fastened to a heat sink,
heat sink, the steady-state thermal circuit is defined by the
a rectangular washer (RCA Part No. NR231 A) is recom-
junction-to-free-air thermal resistance given in the published
mended to minimize distortion of the mounting flange.
data for the device. Thermal considerations require that a
Excessive distortion of the flange could cause damage to the
free flow of air around the device is always present and that
transistor. The washer is particularly important when the size
the power dissipation be maintained below the level which
of the mounting hole exceeds 0.140 inch (6-32 clearance).
would cause the junction temperature to rise above the
Larger holes are needed to accommodate insulating bushings;
maximum rating. However, when the device is mounted on a
however, the holes should not be larger than necessary to
heat sink, care must be taken to assure that all portions of
provide hardware clearance and, in any case, should not
the thermal circuit are considered.
exceed a diameter of 0.250 inch.
Flange distortion is also possible if excessive torque is To assure efficient heat transfer from case to heat sink
used during moun ting. A maximum torque of 8 inch-pounds when mounting RCA molded-plastic solid state power
is specified. Care should be exercised to assure that the tool devices, the following special precautions should be
used to drive the mounting screw never comes in contact observed:
with the plastic body during the driving operation. Such I. Mounting torque should be between 4 and 8 inch-
contact can result in damage to the plastic body and internal pounds.
device connections. An excellent method of avoiding this 2. The mounting holes should be kept as small as possible.
problem is to use a spacer or combination spacer-isolating 3. Holes should be drilled or punched clean with no burrs or
bushing which raises the screw head or nu t above the top ridges, and chamfered to a maximum radius of 0.010
surface of the plastic body. The material used for such a inch.
spacer or spacer-isolating bushing should, of course, be 4. The mounting surface should be flat within 0.002
carefully selected to avoid "cold flow" and consequent inch/inch.
reduction in mounting force. Suggested materials for these 5. Thermal grease (Dow Corning 340 or equivalent) should
bushings are diallphtalate, fiberglass-filled nylon, or fiber- always be used on both sides of the insulating washer if
glass-filled polycarbonate. Unfilled nylon should be avoided. one is employed.
Modification of the flange can also result in flange 6. Thin insulating washers should be used. (Thickness of
distortion and should not be attempted. The transistor factory-supplied mica washers range from 2 to 4 mils).
should not be soldered to the heat sink by use of lead-tin 7. A lock washer or torque washer, made of material having
solder because the heat required with this type of solder will sufficient creep strength, should be used to prevent
cause the junction temperature of the transistor to become degradation of heat sink efficiency during life.
excessively high.
The. TO220AA plastic transistor can be mounted in A wide variety of solvents is available for degreasing and
commercially available TO-66 sockets, such as UID flux removal. The usual practice is to submerge components
Electronics Corp. Socket No. PTS4 or equivalent. For in a solvent bath for a specified time. However, from a
testing purposes, the TO-220AB in-line package can be reliability stand point it is extremely important that the
mounted in a Jetron Socket No. DC74-104 or equivalent. solvent, together with other chemicals in the solder-cleaning
Regardless of the mounting method, the following system (such as flux and solder covers), do not adversely
precautions should be taken: affect the life of the component. This consideration applies
1. Use appropriate hardware. to all non-hermetic and molded-plastic components.
2. Always fasten the transistor to the heat sink before the It is, of course, impractical to evaluate the effect on
leads are soldered to fixed terminals. long-term transistor life of all cleaning solvents, which are
3. Never allow the mounting tool to come in contact with marketed with numerous additives under a variety of brand
the plastic case. names. These solvents can, however, be classified with
4. Never exceed a torque of 8 inch-pounds. respect to their component parts, as either acceptable or
5. Avoid oversize mounting holes. unacceptable. Chlorinated solvents tend to dissolve the outer
6. Provide strain relief if there is any probability that axial package and, therefore, make operation in a humid atmos-
stress will be applied to the leads. phere unreliable. Gasoline and other hydrocarbons cause the
inner encapsulant to swell and damage the transistor. Alcohol the device. With proper handling and applications
and unchlorinated freons are acceptable solvents. Examples procedures, however, MOS transistors are currently being
of such solvents are: extensively used in production by numerous equipment
I. Freon TE manufacturers in military, industrial, and consumer applica-
2. Freon TE-35 tions, with virtually no problems of damage due to
3. Freon TP-35 (Freon PC) electrostatic discharge.
4. Alcohol (isopropanol, methanol, and special denatured In some MOS FETs, diodes are electrically connected
alcohols, such as SDA I, SDA30, SDAJ4, and SDA44) between each insulated gate and the transistor's source.
Care must also be used in the selection of fluxes for lead These diodes offer protection against static discharge and
soldering. Rosin or activated rosin fluxes are recommended, in-circuit transients without the need for external shorting
while organic or acid fluxes are not. Examples of acceptable mechanisms. MOS FETs which do not include gate-
fluxes are: protection diodes can be handled safely if the follOWingbasic
I. Alpha Reliaros No. 320-33 precau tions are taken:
2. Alpha Reliaros No. 346 I. Prior to assembly into a circuit, all leads should be kept
3. Alpha Reliaros No. 711 shorted together either by the use of metal shorting
4. Alpha Reliafoam No. 807 springs attached to the device by the vendor, or by the
5. Alpha Reliafoam No. 809 insertion into conductive material such as "ECCOSORB*
6. Alpha Reliafoam No. 811-13 LD26" or equivalent.
7. Alpha Reliafoam No. 815-35 (NOTE: Polystyrene insulating "SNOW" is not suffi-
8. Kester No. 44 ciently conductive and should not be used.)
If the completed assembly is to be encapsulated, the 2. When devices are removed by hand from their carriers,
effect on the molded-plastic transistor must be studied from the hand being used should be grounded by any suitable
both a chemical and a physical standpoint. means, for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
RECTIFIERS AND THYRISTORS 4. Devices should never be inserted into or removed from
A surge-limiting impedance should always be used in circuits with power on.
series with silicon rectifiers and thyristors. The impedance
value must be sufficient to limit the surge current to the INTEGRATED CIRCUITS
value specified under the maximum ratings. This impedance In any method of mounting integrated circuits which
may be proVided by the power transformer winding, or by an involves bending or forming of the device leads, it is
external resistor or choke. extremely important that the lead be supported and clamped
A very efficient method for mounting thyristors utiliZing between the bend and the package seal, and that bending be
packages such as the JEDEC TO-5 and "modified TO-5" is to done with care to avoid damage to lead plating. In no case
provide intimate contact between the heat sink and at least should the radius of the bend be less than the diameter of the
one half of the base of the device opposite the leads. These lead, or in the case of rectangular leads, such as those used in
packages can be mounted to the heat sink mechanically with RCA 14-lead and 16-lead flat-packages, less than the lead
glue or an epoxy adhesive, or by soldering. Soldering to the thickness. It is also extremely important that the ends of the
heat sink is preferable because it is the most efficient bent leads be straight to assure proper insertion through the
method. holes in the printed-drcuit board_
The use of a "self-jigging" arrangement and a solder
COS/MOS (Complementary-Symmetry MOS)
preform is recommended. Such an arrangement is illustrated
Integrated Circuits
in RCA Publication MHI-300B, "Mounting Hardware
Supplied with RCA Semiconductor Devices". If each unit is 1. Handling
soldered individually, the heat source should be held on the All COS/MOS gate inputs have a resistor/diode gate
heat sink and the solder on the unit. Heat should be applied protection network. All transmission gate inputs and all
only long enough to permit solder to flow freely. For more outputs have diode protection prOVided by inherent p-n
detailed thyristor mounting considerations, refer to Appli- junction diodes. These diode networks at input and output
cation Note AN3822, "Thermal Considerations in Mounting interfaces fully protect COS/MOS devices from gate-oxide
of RCA Thyristors". failure (70 to 100 volt limit) for static discharge or signal
voltage up to I to 2 kilovolts under most transient or
MOS FIELD-EFFECT TRANSISTORS low-current conditions.
Insulated-Gate Metal Oxide-Semiconductor Field-Effect Although protection against electrostatic effects is
Transistors (MOS FETs), like bipolar high-frequency provided by built-in circuitry, the following handling
transistors, are susceptible to gate insulation damage by the precautions should be taken:
electrostatic discharge of energy through the devices. I. Soldering-iron tips and test equipment should be
Electrostatic discharges can occur in an MOS FET if a type grounded.
with an unprotected gate is picked up and the static charge, 2. Devices should not be inserted in non-conductive
built in the handler's body capacitanu' is discharged through containers such as conventional plastic snow or trays.
*Trade Mark: Emerson and Cumming, Inc.

Unused Inputs
Solid state chips, unlike packaged devices, are non-
All unused input leads must be connected to either VSS
hermetic devices, normally fragile and small in physical size,
or VDD, whichever is appropriate for the logic circuit
and therefore, require special handling considerations as
involved. A floating input on a high-current type, such as the
follows:
CD4009A, CD40IOA, not only can result in faulty logic
operation, but can cause the maximum power dissipation of I. Chips must be stored under proper conditions to insure
200 milliwatts to be exceeded and may result in damage to that they are not subjected to a moist and/or contam-
the device. Inputs to these types, which are mounted on inated atmosphere that could alter their electrical,
printed-circuit boards that may temporarily become physical, or mechanical characteristics. After the shipping
unterminated, should have a pull-up resistor to VSS or VDD. container is opened, the chip must be stored under the
A useful range of values for such resistors is from 0.2 to I following conditions:
megohm.
Input Signals A. Storage temperature, 400C max.
Signals shall not be applied to the inputs while the device B. Relative humidity, 50% max.
power supply is off unless the input current is limited to a C. Clean, dust-free environment.
steady state value of less than 10 milliamperes. 2. The user must exercise proper care when handling chips
Output Short Circuits to prevent even the slightest physical damage to the chip.
Shorting of outputs to VSS or VDD can damage many of
3. During mounting and lead bonding of chips the user must
the higher-out put-current CaS/MaS types, such as the
use proper assembly techniques to obtain proper elec-
CD4007A, CD4009A, and CD4010A. In general, these types
trical, thermal, and mechanical performance.
can all be safely shorted for supplies up to 5 volts, but will be
damaged (depending on type) at higher power-supply 4. After the chip has been mounted and bonded, any
voltages. For cases in which a short-circuit load, such as the necessary procedure must be followed by the user to
base of a p-n-p or an n-p-n bipolar transistor, is directly insure that these non-hermetic chips are not subjected to
driven, the device output characteristics given in the moist or contaminated atmosphere which might cause
published data should be consulted to determine the the development of electrical conductive paths across the
requirements for a safe operation below 200 milliwatts. relatively small insulating surfaces. In additior., proper
For detailed CaS/MaS IC Handling Considerations, refer consideration must be given to the protection of these
to Application Note ICAN-6000 "Handling Considerations devices from other harmful environments which could
for MaS Integrated Circuits". conceivably adversely affect their proper performance.
[Kl(]5LJD Thyristors
Solid State Application Note
Division
AN-3418
Design Considerations for the

RCA-S6431M Silicon Controlled Rectifier
In High-Current Pulse Applications
by
D. E. Burke and G. W. Albrecht
Silicon controlled rectifiers (SCR's) are often used The negative voltage reverse-biases the SCR. This
in pulse circuits in which the ratio of peak to average form of turn-off is indicated in Fig.2(bl.
current is large. Typical applications include radar When the energy-storage network is recharged
pulse modulators, inverters, and switching regulators.
from the dc supply, the SCR returns to the forward-
The limiting parameter in such applications often is
blocking condition and is ready foc the next cycle.
the time required for forward current to spread over The recharge interval (t3 - t4) may be delayed by use
the whole area of the junction. Losses in the SCR of a charging SCR, as shown in Figs.l and 2 (t2 - t3).
are high, and are concentrated in a small region until This technique reduces the turn-off time requirements
the entire junction area is in conduction. This concen-
for the SCR. The rate of rec harge infl uences the
tration produces undesirable high temperatures. dv/ dt requirements for the SCR.
The RCA-S6431M SCR is specially designed to Figs.l and 2 illustrate only one of a great variety
achieve rapid utilization of the full junction area The of pulse circuits, each of which would have particular
rating curves and calculations presented in this Note requirements for the SCR. A common requirement
allow the designer to make full use of the high switch- would be to pass focward currents with particular
ing capability of this device.
emphasis on shape and magnitude.
TurnOn Time Definitions
A typical SCR pulse modulator circuit is shown In the idealized waveforms of Fig.2, the SCR is
in Fig.I. Basic waveforms for the circuit are shown presented as a perfect switch. Actually, it exhibits
in Fig.2. The capacitors of the energy-storage network a finite resistance prior to turn-on, a delay after the
are charged by the dc supply. The SCR is triggered introduction of the trigger pulse, and appreciable
by pulses from the gate-trigger generator No.1, and the resistance after turn-on.
energy-storage network discharges through an induct-
The common definition of turn-on time adequately
ance and the load (transformer). Fig.2 shows that the
covers the delay and rise-time intervals of the turn-on
discharge of the storage network (t 1- t2) is oscillatory;
process, but does not consider the rate of current
the half-sine-wave shape is characteristic of a single
spread over the junction area and its attendant dissi-
LC-section energy-storage network.
pation. Because the dissipation after turn-on is an
For turn-off, the load is "mismatched" to the important consideration in pulse circuits, turn-on defi-
discharge-circuit impedance so that a negative voltage nitions in themselves provide no indication of the
is developed on the capacitor at the end of the pulse. switching capability of the SCR.
Ie '+---V
I
I
I
I
I
VSCR 0 - --1- --
As an example, the rise-time portion of turn-on I

is defined as the time interval between the 10-per-cent
+
-h~ I
_
and 90-per-cent points on the current wave shape when GATE 0
the SCR is triggered on in a circuit that has rated

SIGNAL I
No.1 I
forward voltage and sufficient resistance
current to rated values.
to limit the
For a 600-volt device, the end
of the turn-on interval occurs when the forward voltage
drop across the SCR is 60 volts. This value contrasts
S~~':.~
b i
NO_2+~
I
r I
with the steady-state forward voltage of only 1 or Z 0
volts under such conditions. An interval many times {~ARGING seRI I I J
greater than the turn-on time may be -required before Fig.2. Idealized wavefarms
the forward voltage drop reduces to the steady-state far pu/se.discharge circuit.
level.
The second interval (tz or fall time) depends on
Switching Capability
the initiation of forward conduction between the p-type
Because several different physical effects occur emitter and the n-type emitter (i.e., anode-to-cathode
in the SCR during the complete turn-on interval, it is current). When this phenomenon is isolated from cur-
convenient to divide the total turn-on time into three rent ef'gcts, as described later, the duration of the
discrete intervals: delay time tl, fall time tz, and voltage fall time measured from the 9O-per-cent to the
equalizing time t3' These intervals are shown in Fig.3. 10-per-cent point is less than 0.3 microsecond. Voltage
The sol id lines represent device turn-on to low steady- fall time is illustrated in Fig.4 for a range of initial
state forward current, in which case equalization voltages.
effects are not pronounced. The dashed lines represent
The flow of forward current during the voltage fall
SCR turn-on to high currents, in which case t3 becomes
time results in power loss in this interval. The magni-
a noticeable interval.
The first interval (tl or delay time) results from I
I
I
the initiation of forward conduction between the p-type I
+~ I
base and the n-type emitter (i.e., injection of holes GATE
o I I
SIGNAL
through the gate-cathode junction and injection of elec- No.1 I I
trons through the cathode-gate junction>. This interval I I
I I I
depends to a Iarge extent upon the level of gate cur-
rent used to turn on the SCR. The use of a trigger
I
I
I r --i---""'-= HIGH CURRENT
I
pul se greater than the min imum gate-current requirement I
I I," ~ I ~ LOW CURRENT
of the SCR minimizes delay time and reduces the range I r r-r------
I I
of the delay times encountered between individual
I
SeR's, the variability of delay with temperature, and I
the variability of cycle-to-cycle delay or jitter.* There I
are no significant power losses in the SCR during I I
l.. I
delay. The del ay interval is primarily of interest I I . -_L ~t1IGH CURRENT
because of its effect on system perfonnance. o --,-""t'""t--r---

I -j'2t- I
* The technical bulletin for the S6431 Mcontains infonnation on -l 'I I- t-t3~
maximum trigger-pulse magnitudes for various pulse widths
for this device. This Note discusses gating characteristics
of ReA SCR t 5 in more detail.
~d.u "Ull~ V1 vU1Luge HI r.oe ~tt, me aeVlce experIences -
.... 800
z
high peak dissipation during the short turn-on interval. w
~ 600
!
o
400
ft 200
"'",,--
Fig.S - Forward voltage as a function of forward vol-
tage at various times after the initiation of turn-on.
FigA - I/Iustratian of voltage faff time

temperature and upon the differential temperature
(low forward current).
stresses in the device. Fig.9 shows the allowable
maximum current for the 864 13M at any time after the
The third discrete interval during turn-on, equaliza- initiation of the current pulse. This curve, together
tion time (t3 of Fig.3), represents the time required for with those in Figs.7 and 8, gives an indication of the
the current to spread over the junction area. The for- feasibility of using the 86431 M in a high-current pulse
ward current resulting from the initial voltage fall is application.
concentrated in a small area of the junction and spreads
gradually over the entire area. The rate of increase Fig.IO illustrates the calculation of device dissi-
pation and pulse repetition rate for a particular pulse
in the active j unction area depends on the geometry
and the junction parameters, and is infll!enced by the
levels of driving voltage and current. In general, the
time required for full utilization of junction area repre-
sents a considerably longer interval than tl (delay)
or tz (fam.
For given conditions of current rise time, current
level, and gate drive, t3 could be defined as the time
required for forward voltage to decrease to a given
multiple of the final steady-state value under a con-
stant-current pulse. Such a definition would be more
indicative of switching capability than the conventional
definition of turn-on time as the time required for for-
ward ON-state voltage to decrease to a percentage
of the initial blocking voltage. At best, however, either
type of definition has only limited usefulness to the
user.
Characteristics and Ratings
Because the major factor In the rating of SCR's

for pulse applications is the initial forward-voltage
drop, the RCAS6431Mis rated specifically for this
characteristic. Figs.5 and 6 show two families of
rating curves which make it possible to calculate the
power loss per pulse and the average power loss for a
particular current-pulse shape, magnitude, and repetition
rate desired. Figs.7 and 8 show maximum allowable
repetition rates and pulse amplitudes for several pulse
shapes, and are useful as a quick estimating guide
for the pulse-current switching capability of the 86431 M
SCR.
Fig.6 - Instantaneous forward dissipation as a function
Limits must also be imposed upon the instantaneous of current at various times after the initiation
temperature rise of the junction over the average case of turn-on.
integral approach is then used to obtain the watt-
seconds-per-pulse measurements shown in the table.
For a repetition rate of 1000 pulses per second, the
average forward dissipation is 24.37 watts for the
current pulse specified. This value is within the
rating of 30 watts for the S643 I M at a case temperature
Fig.? - Peak current as a function of maximum repetition

rate for sine-wave pulse shapes.
4000 ~~
o I 2 3 4 5
~ TJME-~S
~
"'3000
~
'"
w
'"
~2000
1
~
lr
Zl
o
~
il' 0
TIME DISSIPATION TOTAL AVERAGE MAXIMUM

INTERVAL FOR DISSIPATION DISSIPATION REP. RATE
Fig.8. Peak current as a function of maximum repetition (~SI INTERVAL FOR ONE AT 1000 CIS FOR 30W
mW-S PULSE REP. RATE DISSIPATION
rate for square-wave pulse shapes. mW-S (Wi (CIS)
0-0.5 1.87
0.5-1 4.12
1-2 8.25
24.37 24.37 1225
2 3 6.18
3 4 3.25
4-5 0.70
EXAMPLE' AVERAGE FORWARD WATT- SECOND

DISSIPATION DURING 3}'-S TO 4~S
INTERVAL:
(4-3) 11:10-6 S J. 3.25 II:103 W =3.25mW-S
of 65C. At higher case temperatures the total dissi-

pation must be decreased, as shown in Fig. II.
Because the interval of highest dissipation occurs
at the beginning of the current pulse, reduction in the
Fig.9 - Maximum permissible current as a function magnitude of current during this time increases the
of time after the initiation of turn-on. over-all switching capability of the SCR. The current
may be reduced by use of a saturable reactor in the
pulse-<iischarge circuit which has sufficient unsaturated
shape. In the example shown, the pulse has a peak volt-second capacity to present a high impedance for
magnitude of 500 amperes and a base width of 5 micro- one to two microseconds. The current is then small,
seconds. The curves shown in Fig.IO are constructed and dissipation is limited, until the junction area in
from the curves of Figs.5 and 6 by means of a series conduction increases to incl ude an appreciable per-
of readings at different time intervals (delay and fall centage of the total cathode. By the time the reactor
regions are neglected), A step-by-step approximate saturates and high pulse current results, the cathode
area in conduction is adequate to handle the high cur-
rent with low dissipation.
FORWARD AND REVERSE
The rate of current spread over the cathode area LOSSES INCLUDED
depends upon several factors, one of which is the r---....
level of current. Therefore, the use of a delay reactor -........
to keep forward current low also delays the spread -.............
of current to some extent and subtracts from its bene- 100 .............
ficial effects. The maximum benefit can be achieved .,
u
-.............
by reduction of the inductance of the reactor prior to "'~ eo r---....
saturation, or by addition of another impedance in -.............
parallel with the reactor, to effect a compromise be-
g.. r---..
tween the initial current level and dissipation and ~ 60
...
the rate of current-density equalization. The curves
in thi s Note do not represent the use of a delayreactor.
In addition to the power loss in the SCR caused by
forward current, the total dissipation in the device
includes forward and reverse blocking losses and
probably reverse recovery losses during the turn-off
process. The reverse recovery losses depend upon
several factors, such as forward-current amplitude, rate
of decrease of forward current, reverse-current flow,
rate of rise of reverse voltage, and reverse-voltage Fig. 7 7 Maximum average total power c/issipation
amplitude. Because reverse losses are circuit-depend- as a function of case temperature.
ent, they can best be evaluated in a working circuit.
Application of RCA Silicon Controlled Rectifiers
to the Control of Universal Motors
by
J.V. Yonushka
Silicon controlled rectifiers have been widely usually designed to have optimum performance char-
accepted in power-control applications in industrial acteristics at this frequency. Most universal motors
systems where high-performance requirements justify run faster at a given dc voltage than at the same 60-
the economics of the application. Historically, in the hertz ac voltage.
commercial high-volume market, economic considera- The field winding of a universal motor, whether
tions have precluded the use of the SCR. However, distributed or lumped (salient pole), is in series with
with the development of a family of SCR's by RCA de- the armature and external circuit, as shown in Fig.1.
signed specifically for mass-production economy and
rated for 120- and 240-volt line operation, the use of
these devices in controls for many types of small elec-
tric motors has been made economically feasible. The
controls can be designed to provide good performance,
maximum efficiency, and high reliability in compact
packaging arrangements.
The control circuits discussed in the following text
are typical of the many possible circuits applicable to
electric motor control. A general description including
the typical characteristics of universal motors is given.
Speed control by use of phase-angle variations is dis- Fig.! . Schematic diagram far a series-waund
cussed; schematic diagrams are given, and the advan- universal motor.
tages and limitations of each circuit are contrasted. A
chart of availableSCR's is shown at the end of the Note. The current through the field winding produces a mag-
netic field which cuts across the armature conductors.
Universal Mators The action of this field in opposition to the field set up
Many fractional horsepower motors are series-wound by the armature current subjects the individual con-
"universal" motors, so named because of their ability ductors to a lateral thrust which results in armature
to operate directly from either ac or dc power sources. rotation.
Fig.l is a schematic of this type of motor operated AC operation of a universal motor is possible be-
from an ac supply. Because most domestic applications cause of the nature of its electrical connections. As
today require 60-hertz power. universal motors are the ac source voltage reverses every half-eycle, the
magnetic field produced by the field winding reverses sated universal motor, the full-load speed is approxi-
its direction simultaneously. Because the armature mately 60 per cent or less of the no-load speed.
windings are in series with the field windings through The torque developed by a universal motor is a
the brushes and commutating segments, the current direct result of the magnitude of magnetic-field flux and
through the armature winding also reverses. Because armature ClU'rent. For fixed mechanical loads, the start-
both the magnetic field and armature current are re- ing torque of a universal motor is high because the
versed, the direction of the lateral thrust on the armature armature current at starting time is high; at "stall" con-
windings remains constant. ditions, because of the large armature current, the
As the armature rotates through the magnetic field, t0rque is again high. The stall torque of a series motor
a voltage opposite to the impressed voltage is induced can be as high as 10 times the continuous rated torque.
in the individual conductors. Counter emf produced in Because torque and armature current influence the
the armature conductors is therefore proportional to speed of a universal motor, it is possible under certain
motor speed. In half-wave operation, during the non- operating conditions to vary the impressed voltage and
conducting half-cycle of an SCR, the rotating armature influence operating characteristics of the motor. For
still produces a counter emf because of the residual increased mechanical loads, an increase in the impress-
magnetism of the field poles. In some of the applica- ed voltage produces a larger armature current and tends
tions described, the counter emf of an operating motor to keep the speed constant. High starting torque, ad-
is used as a means of providing speed regulation to justable speed characteristics, and small size are
compensate for changing shaft loads. distinct advantages of a universal motor over a com-
The current through an operating motor armature parably rated single-phase induction motor. Typical
depends upon the difference between the impressed performance characteristic curves for a universal motor
voltage (emf) and the counter emf. The current that are shown in Fig.2.
flows through a universal motor when it is initially
energized is large because there is no rotation to gener-
ate a counter emf in the armature windings. The starting
current is limited only by the impedance of the armature
and field windings. The ratio of peak starting current
to peak running current can be as high as 10: 1.
The speed of a series motor automatically adjusts
itself so that the difference between the impressed volt-
age and the counter emf is sufficient to permit enough
current to flow to develop the torque required by the
load. At very light loads, or at no load, the current
through a universal motor is small. To maintain a small Fig.2. Typical performance curves for a
current through the motor, the counter emf must be high universal motor.
enough so that only a small difference exists between
the impressed voltage and the counter emf. The small Use of Silicon Controlled Rectifiers for Motor Control
current through the motor also results in a weak mag-
netic-field flux because it is the current through the One of the simplest and most efficient means of
field winding that produces the fl ux. The weakened varying the impressed voltage to a load on an ac power
magnetic-field flux tends to make the motor speed in- system is by control of the conduction angle of an SCR
crease even further to prod uce the high counter emf placed in series with the load. Typical curves showing
requi red to maintain a small motor current. It would the variation of motor speed with SCR conduction angle
appear, then, that universal motors should tend to "run for both half-wave and full-wave impressed motor volt-
away" at no load. This run-away do~s not occur, how- ages are illustrated in Fig.3. If desired, a switch may
ever, because motors of this type usually offer enough be installed in the half-wave circuits so that the SCR
friction and windage loss to limit the maximum attain- and its related control circuit can be bypassed for full-
able no-load speed to a safe val ue. power operation.
When a mechan ical load is attached to a universal

motor, the current through the motor must increase to HolfWove Control
provide the increased torque required by the load. An There are many good circuits available for half-
increase in the current through the motor requires an wave control of universal motors; their attributes and
increase in the difference between the impressed vol t- limitations are described in detail below. The circuits
age and the counter emf. This increased difference can are divided into two classes; regulating and non-regu-
only be brought about by a reduction in counter emf lating. Regulation in this instance implies load sensing
derived from a decrease in speed. For an uncompen- and compensation of the system to prevent changes in
of the neon lamp improves noise rejection and prevents
erratic firing of the SCR because of brush noises on
the voltage supply lines. Table I shows components
for the circuit of FigA.
Fig.3 Typical performance curves for a universal motor

with phose-angle control.
motor speed. The type of regulation provided by each

circuit is stated and compared to other circuits.
The half-wave proportional control circuit shown
in FigA is a non-regulating circuit whose function de-
pends upon an RC delay network for gate phase-lag
control. This circuit is better than simple resistance
firing circuits because the phase-shifting characteristics
of the RC network permit the firing of the SCR beyond
the peak of the impressed voltage, resulting in small
conduction angles and very slow speed.
The control circuit shown in FigA uses the break-
down voltage of a neon lamp as a threshold setting for *NE83, 5AH, A057B, or equiv.
firing the SCR. The neon lamp is specifically designed
Fig.4 Haffwave motor control with no regulation.
for handling the high-eurrent pulses required to trigger
SCR's. When the voltage across capacitor C reaches
the breakdown voltage of the neon lamp, the lamp fires, The circuit shown in Fig.5 reduces spread in gate
and C discharges through the lamp to its maintaining turn-on characteristics. This circuit depends upon the
voltage. At this point, the lamp again reverts to its fast switching characteristics of transistors such as
high-impedance state. The discharge of the capacitor those used in the two-transistor regenerative trigger
from breakdown to maintaining voltage of the neon lamp network shown. The phase-shift characteristics are
provides a current pulse of sufficient magnitude to fire still retained to provide conduction angles less than
the SCR. Once the SCR has fired, the voltage across 90 degrees through the RC network of R1, R2, and C1.
the phase-shift network reduces to the forward voltage Resistor Ra provides turn-on current to the base of Q1
drop of the SCR for the remainder of the half-cycle. The when the voltage across C 1 becomes large enough during
range of conduction angles of this circuit is approxi- the positive half-cycle. The base current in Q 1 turns
mately 30 to 150 degrees. The high breakdown voltage on this transistor. Transistor Ql then supplies base
TABLE I COMPONENTS FOR CIRCUIT SHOWN IN FICA.

AC AC F1 CR1 R2 SCR1
SUPPLY CURRENT
120 V I A 3 AG, 1.5 A, Quick Act D12018 100 K, 1/2 W RCA2N3528'

120 V 3A 3 AS, 3 A D12018 100 K, 1/2 W RCA-2N3228
120 V 7A 3 AS, 7 A D12018 100 K, 1/2 W RCA2N3669
240 V IA 3 AG, 1.5 A, Quick Act D1201D 150 K, 1/2 W RCA2N3529
240 V 3A 3 AS, 3 A D1201 D 150 K, 1/2 W RCA2N3525
240 V 7A 3 AS, 7 A D1201D 150 K, 1/2 W RCA2N3670
366
+ C,
'I"
- 25v
current to Q2. When Q2 turns on, it supplies more base

current to Ql. This regenerative action leads to the
rapid saturation of transistors Q 1 and Q2. Capacitor C 1
discharges through the saturated transistors into the
gate of the SCR. When the SCR fires, the remaining
portion of the positive half-cycle of ac power is applied
to the motor. Speed control is accomplished by adjust-
ment of potentiometer R 1. With component values as
shown on the schematic diagram in Fig.5, the threshold
voltage for firing the circuit is approximately 8 volts;
the maximum conduction angle is approximately 170
degrees. Table II shows components for the circuit
with various RCA SCR's.
Fig.6 shows a fundamental circuit of direct-coupled
SCR control with voltage feedback. This circuit is
highly effective for speed control of universal motors.
The circuit makes use of the counter emf kemD induced
TABLE II - COMPONENTS FOR CIRCUIT SHOWN IN FIG.5.

AC AC F1 CR1 R1 SCR1
SUPPLY CURRENT
120 V lA 3 AG, 1.5 A, Quick Act 012018 75 K, 1/2 W RCA-2N3528

120 V 3A 3 AB, 3 A 012018 75 K, 1/2 W RCA-2N3228
120 V 7A 3 AB, 7 A 012018 75 K, 1/2 W RCA2N3669
240 V I A 3 AG, 1.5 A, Quick Act 012010 150 K, 1/2 W RCA-2N3529
240 V 3A 3 AB, 3 A 012010 150 K, 1/2 W RCA-2N3525
240 V 7A 3 AB, 7 A 012010 150 K, 1/2 W RCA-2N3670
in the rotating armature because of the residual magnet- cycles when there is no voltage applied to the motor,
ism in the motor on the half-cycle when the SCR is (hence the term skip cycling").
blocking. When a load is applied to the motor, the motor
The counter emf is a function of speed and, there- speed decreases and thus reduces the counter emf in-
fore, can be used as an indication' of speer: changes as duced in the rotating armature. With a reduced counter
mechanical load varies. The gate-firing circuit is a emf, the SCR fires earlier in the cycle and provides
resistance network consisting of R1 and Rz. During increased motor torque to the load. Fig.6 also shows
the positive half-cycle of the source voltage, a fraction variations of conduction angle with changes in counter
of the voltage is developed at the center-tap of the emf. The counter emf appears as a constant voltage
potentiometer and is compared with the counter emf at the motor terminals when the SCR is blocking. Be-
developed in the rotating armature of the motor. When cause the counter emf is essentially a characteristic
the bias developed at the gate of the SCR from the of the motor, different potentiometer settings are re-
potentiometer exceeds the counter emf of the motor, quired for comparable operating conditions for different
the SCR fires. AC power is then applied to the motor motors. Circuit values for use with various RCA SCR's
for the remaining portion of the positive half-cycle. are shown in Table III.
Speed control is accompl ished by adjustment of poten- Fig.7 shows a variation of the circuit in Fig.5.
tiometer R l' If the SCR is fired early in the cycle, the The basic difference between the two circuits is that
motor operates at high speed because essentially the the circuit in Fig.7 provides feedback for changing
full rated line voltage is applied to the motor. If the load conditions to minimize changes in motor speed.
SCR is fired later in the cycle, the average value of The feedback is provided by R7' which is in series with
voltage applied to the motor is reduced, and a corres- the motor. A voltage proportional to the peak current
ponding reduction in motor speed occurs. On the nega- through the motor is developed across the resistor.
tive half-cycle, the SCR blocks voltage to the motor. This voltage is stored on capacitor Cz through diode
The voltage applied to the gate of the SCR is a sine CRz, and is of a polarity that causes the bias on the
wave because it is derived from the sine-wave line volt- resistance network ofR3 and R4 to change in accordance
age. The minimum conduction angle occurs at the peak with the load on the motor. With an increasing motor'
of the sine wave and is restricted to 90 degrees. In- load, the speed tends to decrease. This decrease in
creasing conduction angles occur when the gate bias motor speed causes more current to flow through the
to the SCR is increased to allow firing at voltage values motor armature and field windings. When the current
which are less than the peak value. flowing through R7 increases, the voltage stored on
At no load and at the low-speed control setting, capacitor Cz increases in the positive direction. This
"skip-cycl ing' operation occurs, and motor speeds are increase in capacitor voltage causes the transistors to
erratic. Because no counter emf is induced in the ar- conduct earlier in the cycle, to fire the SCR, and to
mature when the motor is standing still, the SCR fires provide a greater portion of the power cycle to the
at low bias settings. The motor is then accelerated to motor. With a decreasing load, the motor current de-
a point at which counter emf induced in the rotating creases and the voltage stored by capacitor Cz de-
armature excceds the gatc-firing bias of the SCR and creases. The transistors and SCR then conduct later
prevents the SCR from firing. The SCR is not able to in the cycle. The resultant reduction in the average
fire again until the speed of the motor is rcduced (be- power supplied to the motor causes a reduced torque to
cause of friction and windage losses) to a value for the smaller load. Because motor current is a function of
which the induced voltage in the rotating armature is the motor itself, resistor R7 has to be matched with the
less than the gate bias. At this time the SCR fires motor rating to provide optimum feedback for load com-
again: The motor deceleration occurs over a number of pensation. Resistor R7 may range from 0.1 ohm for
TABLE III COMPONENTS FOR CIRCUIT SHOWN IN FIG.6.

AC AC Fj CRj, CR2 Rj R2 SCR1
SUPPLY CURREIiT
120 V 1A 3 AG, 1.5 A, Quick Act 012018 5.6 K, 2W I K, 2 W RCA-2N3528

120 V 3A 3 AS, 3 A 012018 5.6 K, 2W I K, 2 W RCA2N3228
120 V 7A 3 AS, 7 A 012018 2.7 K, 4W 500,2 W RCA-2N3669
240 V IA 3 AG, 1.5 A, Quick Acl 012010 10 K, 5W I K, 2 W RCA2N3529
240 V 3A 3 AS, 3 A 012010 10 K, 5W I K, 2 W RCA-2N3525
240 V 7A 3 AS, 7 A 012010 5.6 K, 7.5 W 500, 2 W RCA-2N3670
MOTOR
~VOLTAGE
C1 '/
VOLTAGE ', ...,'
GATE CURRENT GATE CURRENT

LIGHT LOAD HEAVY LOAD
Fig.7 - Half.wave motor control using two-transistor regenerative triggering with regulation.
larger-size universal motors to 1.0 ohm for smaller vices is avoided. There is a hysteresis effect associ-
types. Circuit values for use with various RCA SCR's ated with this circuit because C1 charges to alternate
are shown in Table IV. positive and negative values. As Rz decreases from
Full-Wave Control
This section discusses the application of SCR's

to full-wave motor control. Two SCR's are usually re-
quired to provide full-wave control.
A very simple SCR full-wave proportional control
circuit is shown in Fig.S. Again, ac phase shifting
and neon triggering are used to provide gate phase- ~~~!ALJE~ A
angle control; a small pulse transformer is utilized for
MOTOR ,'-&':>,.. V /-~
isolation. The circuit provides a symmetrical output
for both Iralves of the ac input voltage because the same
VOLTAGE I ~
<,,V ' <
CAPACITOR/"'\. - /"'\.
electrical components are used in the phasing network VOLTAGE~
for both SCR gates. Because the SCR gate circuits are
*NE-83. 5AH. A057B. or equiv.
completely isolated from each other, the cross-talk Tl - Better Coil and Transformer
problem usually associated with gate firing circuits Co. Type 99A16. or equiv.
using transformer coupling and bi-directional trigger de- Fig.8 - Full-wave motor control with no regulation.
TABLE IV - COMPONENTS FOR CIRCUIT SHOWN IN FIG.7.

AC AC Fl CRl SCRl
R]
SUPPLY CURRENT
120 V IA 3 AG, 1.5 A, Quick Act 012018 75 K, 1/2 W RCA-2N3528

120 V 3A 3 AS, 3 A 012018 75 K, 1/2 W RCA-2N3228
120 V 7A 3 AS, 7 A 012018 75 K, 1/2 W RCA-2N3669
240 V lA 3 AG, 1.5 A, Quick Act D12010 150 K, 1/2 W RCA-2N3529
240 V 3A 3 AS, 3 A D12010 150 K, 1/2 W RCA-2N3525
240 V 7A 3 AS, 7 A 012010 150 K, 1/2 W RCA-2N3670
369
its maximum value, C 1 charges to a higher voltage on tive potential at the anode. When the SCR fires, the
each half cycle. When the positive half-eycle voltage remaining portion of the half-eycle is applied to the
on C 1 reaches the breakdown potential of the neon lamp, load. On the alternate half-cycle, the other SCR turns
the lamp fires, allowing C 1 to discharge to the main- on. With the component values shown in Fig.9, the
taining voltage of the lamp through CR 1 and the lamp threshold voltage required to fire the transistor circuit
into the gate of SCR2. When SCR2 fires, the voltage is approximately 8 volts. Variations in conduction
across the control circuit drops to the forward voltage angle are accomplished by changing the setting of R 2'
val ue of the SCR, allowing C 1 to discharge. On the In this circuit, the conduction angles may be varied
next half-cycle, C 1 charges from a lower positive poten- from 5 to 170 degrees; this larger range is more de-
tial and allows the neon lamp to fire earlier in the sirable when higher power is to be controlled.
cycle. If the potentiometer resistance R2 is increased,
An SCR full-wave circuit designed for applications
the SCR's fire at a reduced conduction angle and the
requiring feedback for compensation of load changes is
hysteresis effect is produced. On the negative half-
shown in Fig.ro. Operation is similar to that of the
cycle, when the charge on C 1 has reached the break-
circuits discussed previously except that this circuit
down potential of the neon lamp, the capacitor discharges
has full-wave conduction with proportional control.
through CR 2, the lamp, and the primary of transformer
Again, as In the circuit of Fig.7, R7 must be matched
T 1 to the maintaining voltage of the neon lamp. The
with the motor rating to provide optimum feedback for
current pulse formed by the discharge of C 1 is coupled
load compensation. Resistor R7 may range from 0.1
by T 1 into the gate of SCR1. For 60-hertz operation,
ohm for larger-size universal motors to 1.0 ohm for
the transformer characteristics are not critical because
smaller types. Table VII gives a component list for use
the magnitude and shape of the current firing pulse are
of this circuit with various SCR's.
determined primarily by the charge on the capacitor and
the characteristics of the neon lamp. Circuit values for
use with various RCA SCR's are shown in Table V.
Ratings and Limitations
Conduction angles obtained with this circuit vary from
30 to 150 degrees; at the maximum conduction angle, Package size and environment limit the voltage
the voltage impressed upon the load (universal motor) and current capabilities and, consequently, the power-
is approximately 95 per cent of the input rms voltage. dissipation abilities of an SCR. Maximum temperature
Fig.9 shows a full-wave control circuit that has in- ratings usually depend on the use of a heat sink of a
creased conduction-angle capability. Table VI shows particular size at a prescribed ambient or case tempera-
ture.
the component chart for use of the circuit with various
SCR's. The threshold point of the transistor circuit can The main cause of heat within an SCR operating at
be changed by varying the value of R3. The phase-shift 60 hertz is the forward current and voltage drop during
network composed of R l' R2, and C 1 permits the varia- conduction. Under steady-state conditions, the heat
tion of conduction angles from minimum to maximum. An generated within the device must be balanced by the
ac potential impressed upon th is phase-shifting network flow of heat to the heat sink and the ambient air. If
eliminates skip-cycling at low conduction angles. The more heat is generated within the SCR than can be
bridge network of CR1, CR2, CR3, and CR4 rectifies dissipated by the case and the heat sink, the junction
the ac voltage developed across C 1 and provides the temperature increases and forward blocking capabilities
switching transistors with dc voltage. When the switch- are lost. Under these conditions the SCR may break
ing trans istors are on and saturated, capacitor C 1 dis- down thermally in the reverse direction, causing damage
charges through them into the primary of T l' Because to the SCR pellet. An increase in heat-sink size to
both SCR's receive the same gate polarity pulse, the maintain the balance between heat generated and heat
pulse formed by C1 and T1 fires that SCR with a posi- dissipated assures reliable performance of the SCR.
AC AC
F] R] R2 C1 SCR1, SCR2
SUPPLY CURRENT
120V 1.5 A 3 AG,2 A, QuickAct I K, II2 W 50 K, II2 W 0.22 JLF, 100V RCA2N3528
120V 5A 3 AS, 5 A I K, II2 W 50 K, II2 W 0.22 JLF, 100V RCA2N3228
120V lOA 3 AS, 10 A I K, II2 W 25 K, 2W 0.47 JLF, 100V RCA2N3669
240 V 1.5 A 3 AG, 2 A, QuickAct I K, IW 50 K, 2W 0.22 JLF, 100V RCA2N3529
240 V 5A 3 AS, 5 A 1 K, 1W 50 K, 2W 0.22 JLF, 100V RCA2N3525
240 V 10 A 3 AS, 10 A 1 K, IW 25 K, 4W 0.47 JLF, 100V RCA2N3670
370
R,
"
R, R5
5.6K '50
II2W 1/2W
R2
CR, CR,
TYPE TYPE
D120lA DI20lA
C,
I,.F
IOOV
CR2 CR4
TYPE TYPE
DI20lA DI20lA
Fig.9. Full-wave motor control with no regulation in w' ich the conduction ongle
can be varied from 5 to 180 degrees.
The current ratings for the circuits using the The SCR can be mounted on a single-plo.te heat
2N3528 and 2N3529 SCR's are based upon measure- sink or on a metal chassis. In chassis mounting the
ments made with these devices mounted by their elec- package housing and heat sink can be insulated from
trical leads with the package in free air. The current the chassis by a mica washer, as shown in Fig.1l. The
ratings for the circuits using the other SCR types are use of silicone grease or other similar material between
based upon measurements made with the SCR's mounted the SCR housing and the heat sink provides a better
on an aluminum heat sink having an equivalent dimen- thermal contact and more efficient heat dissipation. If
sion of 3 by 3 by 1/16 inches. heat dissipation is critical, a finned heat sink should
TABLE VI COMPONENTS FOR CIRCUIT SHOWN IN FIG.9.

AC AC
F] RZ SCRI, SCRZ
SUPPLY CURRENT
120 V 1.5 A 3 AG, 2 A, Quick Act 75 K, V2 W RCA-2N3528

120 V 5A 3 AS, 5 A 75 K, V2 W RCA-ZN3228
120 V lOA 3 AS, 10 A 75 K, V2 W RCA2N3669
240 V 1.5 A 3 AG, 2 A, Quick Act 150 K, V2 W RCA2N3529
240 V 5A 3 AS, 5 A 150 K, V2 W RCA2N3525
240 V 10 A 3 AS, 10 A 150 K, 1/2 W RCA-2N3670
CR2
TYPE
Ol20lA
MOTOR
~VOLT.GE
Cl \ /
VOLTAGE " /
.. /
TABLE VII . COMPONENTS FOR CIRCUIT SHOWN IN FIG.lO.

AC AC F CRl,CR2, R]
l
SUPPLY CURRENT CR3, CR,j
120 V ] A 3 AG, 1.5 A, Quick Act RCA-l N 2860 50 K, 1/2 W RCA-2N3528

120 V 3A 3 AS, 3 A RCA-l N l202A 50 K. 1/2 W RCA2N3228
120 V 7A 3 AS, 7 A RCA-lNl202A 50 K. 1/2 W RCA-2N3669
240 V 1A 3 AG, 1.5 A, Quick Act RCA-l N 2862 100 K, 1/2 W RCA-2N3529
240 V 3A 3 AS, 3 A RCA-lNl204A 100K.1/2W RCA2N3525
240 V 7A 3 AS, 7 A RCA-l N 1204A 100 K, 1/2 W RCA2N3670
be used. Heat-sink size may be reduced in any applica- Nameplate data for some universal motors are given
tion if moving air can be provided at the SCR mounting in developed horsepower to the load. This mechanical
site. designation can be converted into its electrical current
equivalent through the following procedure.
If a universal motor is operated at low speed under
Internal motor losses are taken into cons ideration
a heavy mechanical load, it may stall and cause heavy
by assigning a figure of merit. This figure. 0.5. repre-
current flow through the SCR. For this reason, low-
sents motor operation at 50-per-eent efficiency. and in-
speed heavy-load conditions should be allowed to exist
dicates that the power input to the motor is twice the
for only a few seconds to prevent possible circuit
power delivered to the load. With this figure of merit
damage. In any case, fuse ratings should be carefully
and the input voltage Vac' the rms input current to the
observed and 1imited to the types and val ues indicated
motor can be calculated as follows:
in the tables accompanying the circuits in this Note.
mechanical horsepower x 746
Practical heat sinks, packaging, available fuse 0.5 Vac
characteristics. and motor overload and stall performance
have been considered and He reflected in the current For an input voltage of 120 volts. the rms input current
ratings shown for the circuits in this Note; these cur- becomes:
rent values should not be exceeded.
For an input voltage of 240 volts. the rms input current universal motors that have calculated rms current ex-
becomes: ceeding the values given in the tables. The circuits
will accommodate universal motors with ratings up to
3/4 horsepower at 120 volts input and up to 1-112 horse-
power at 240 volts input.
[Kl(]3LJD Thyristors
Division
AN-3551
Circuit Factor Charts

for RCA Thyristor Applications
(SCR's and Triacs)
by
B. J. Roman and J. M. Neilson
In the design of circuits using thyristors (SCR's and its period of forward conduction. For conduction angles
triacs). it is often necessary to determine the specific greater than 90degrees, Ipk is equal to 10; for conduction
values of peak, average, and rms current flowing through angles smaller than 90 degrees, Ipkis smaller than 10,
the device. Although these values are readily determined The curves of Figs. 1, 2, and 3 can be used in a
for conventional rectifiers, the calculations are more number of ways to calculate desired current values. For
difficult for thyristors because the current ratios become example, they can be used to determine the peak or rms
functions of both the conduction angle and the firing current in a thyristor when a specified average current
angle of the device. is to be delivered to a load during a given part of the
This Note presents charts that show several current conduction period. It is also possible to work backwards
ratios as functions of conduction and firing angles for and determine the necessary period of conduction to main-
some of the basic SCR and triac circuits. Examples are tain a specified peak-to-average current ratio in a par-
given of the use of these charts in the design of half- ticular application. Another use is the calculation of
wave, full-wave ac, full-wave dc, and three-phase half- rms current at various conduction angles when it is nec-
wave circuits using RCA thyristors. Current and voltage essary to determine the power delivered to a load, or
waveforms for the various circuits are also included, as power losses in transformers, motors, leads, or bus bars.
well as curves of per-cent ripple in load current and Although the curves represent device currents, they are
voltage. equally useful for calculation of load current and voltage
ratios.
Current. Ratio Curves For use of these curves, it is first necessary to
Figs. 1, 2, and 3 show current-ratio curves for a identify the unknown or desired parameter. The values
single-phase half-wave SCR circuit with resistive load, of the parameters fixed by the circuit specifications are
a single-phase SCR or triac full-wave circuit with resis- then determined, and the appropriate curve is used to
tive load, and a three-phase half-wave SCR circuit with obtain the unknown quantity as a function of two of the
resistive load, respectively. These curves relate average fixed parameters. Examples of the use of the curves are
current Iavg' rms current Irms' and peak current Ipk to a given to illustrate their versatility.
reference current 10, This reference current 10 is a con-
stant of the circuit equal to the peak source voltage Vpk
dividedby the load resistance RL; it represents the In the single-phase half-wave circuit shown in Fig. 4,
maximum value that the current can obtain and corre- an SCR is used to control power from a sinusoidal ac source
sponds to the peak of the sine wave. The peak current of J 20 volts rms (170 volts peak) into a 2.8-ohm load. This
Ipk is the current which appears at the thyristor during application requires a load current which can be varied from
2 to 25 amperes. It is necessary to determine the range of
conduction angles required to obtain this range of load current.
DEFINITIONS:
1= 10 sin8c(OO~8c~t800)
IOVg=t;Io~CId8
7 - SCR current ratios for single-phase, half-wave

conduction with resistive load.
The reference current 10 is first calculated, as

follows:
The ratio of rms current Irms to I0 is then calculated Fig. 3 - SCR current ratios for three-phase half-wave
for the maximum and minimum load-current requirements, circuit with resistive load.
as follows:
The conduction angles corresponding to the ratios can

then be determined by use of curve 3 in Fig. 1:
ec max = 1060
ec min = 150
Full-Wave AC Triac Circuit
Fig. 5 shows a circuit in which a triac is used to control

the power to a 20-ohm resistive load. It is desired to find
the range of conduction angles the gate circuit must be
capable of supplying to provide continuous variation in
Fig. 2 - SCR or triac current ratios for single-phase, full- load power between 5 and 97 percent of the full power which
wave conduction with resistive load. the load could dra;-v.
conduction angle required to maintain the average load
current at a constant value of 30 amperes while the load
~$~'VV'v
resistance varies between 0.12 and 1.80 ohms.
The reference currents are calculated for maximum

and minimum values of load resistance, as follows:
20 OHMS
: V peak 64 V2__ 750 amperes

R 0.12
L .
mln
Full power P is given by
V 2 1202
p=~
RL 20
Therefore, the 5- and 97-per-cent power points are as

follows:
Ps : 36 watts
P 97 : 698 watts DEVICE DEVICE

VOLTAGE \ /CURRENT
The rms current corresponding to each point is given by __ /_/_-_t\ /h..-

\ .... _ ... "'} \,-"",,/ '
IS J P s/RL : V 36/20 : 1.3 amperes rms
The reference current 10 is determined as follows:
120 xV2
20 8.5 amperes
The current ratios for the 5- and 97-per-cent power levels

then become
at 5%, I,ms/Io : 1.3/8.5 (amperes) : 0.153
at 97%, I,ms/Io : 5.9/8.5 (amperes) : 0.695
Because the circuit shown in Fig. 5 is a full-wave cir-

cuit, the calculated current ratios are used in curve 3 of
Fig. 2 to determine the required conduction angles:
Thus, the load power is continuously variable from 5 to

97 per cent of full load if the gate circuit is constructed
!8lftCA
so that the conduction angle can be varied between 35
and 150 degrees. This variation is within the range
which can be obtained with a simple trigger-diode type j IN249C
of gate circuit.
Full-Wave DC SCR or Triac Circuit

I ',_y/-f\,]/-~
Fig. 6 shows several different SCR circuits and a
triac circuit which can be used to supply a constant dc
output to a variable load resistance with an ac input of Fig. 6 - Typical current and voltage waveforms for single-
64 volts rms. It is desired to determine the variation in phase, full-wave thyristor circuits with resistive load.
64 Vi__
50 amperes
1.80
The ratios of lavg to 10 for an average load current of 30

amperes are then calculated as follows:
DEVICE
VOLTAGE
WAVEFORM
FOR BF:45
The conduction angles corresponding to these two ratios

can then be obtained from curve 5 in Fig. 2:
Fig. 8 - Typical current and voltage waveforms for three-

phase, hoff-wave SCR circuit with resistive load.
I,ms = 0.49 for I3 300

f
I
DEVICE VOL rAGE o
85V PEAK FORWARD,
147 V PEAK
REvERSE
These ratios, together with the reference current, are

then used to determine the range of rms current in the
SCR's, as follows:
I,ms max = (0.49) (28) = 13.7 amperes
Fig. 7 shows a three-phase, half-wave circuit that uses I=s min = (0.06) (28) = 1.7 amperes
three SCR's. In this application, the firing angle can be
varied continuously from 30 to 145 degrees. It is desired In this type of circuit, the rms load current is equal
to determine the resulting variation in the attainable load to the rms SCR current multiplied by the square root of
power. Current and voltage waveforms for SCR's in three- three. The load power P, therefore, is given by
phase, half-wave circuits are shown in Fig. 8.
Again, the reference current 10 is calculated first,

as follows: The range of load power can then be determined as
follows:
VLpeak 85 __
28 amperes
RL 3
Current ratios at the extremes of the firing range are

determined from Fig. 3. For the specified firing angles, In other words, the load power can be varied continuously
the current ratios are given by from 27 to 1700 watts.
Per-Cent Ripple in Lood by an ac component) that can be tolerated in the appli-
cation. Fig. 9 shows per-cent ripple in load current
The choice of a rectifier circuit for a particular
and voltage for single-phase half-wave, single-phase
application often depends on the amount of rectifier
full-wave, and three-phase half-wave thyristor circuits.
"ripple" (undesired fluctuation in the dc output caused
f-- -
Ir
\."- ~
SINGLE-PHASE, HALF -WAVE
o \' f-- -
--;--1-
tJr/INGLE-PHASE, FULL-WAVE
THREE - PHASE. HALF -WAVE
o \
'-{ 1/ .........
~ 30 "\ CD
cr
"< ........
20 0
~ r---... .........~
~
0.
ir
'00
B0
.........
......... I-
-
0
YRMS RIPPLE 2 .jI/RMS2 -VAVG2
0
0
-t. RIPPLE"
I
I I
(VRMS RIPPLE)
VAIIG 1.100 0/.
I I
\.
,
.5 60 75 105 120 135 150 165 ISO
I
"I
""
I I I I
90
CONDUCTION ANGLE (Bel-DEGREES
I I I I I ! I
ISO 165 150 135 '20 105 90 75 60 45 30 15 0
FIRING ANGLE (8fl-DEGREES
Fig. 9 - Output ripple in thyristor circuits as a function

of conduction and firing angles.
OOm3LJD Thyristors
Division
AN-3659
Application of RCA Silicon Rectifiers

To Capacitive Loads
When rectifiers are used in capacitive-load circuits,

the rectifier current waveforms may deviate consider-
ahly from their true sinusoidal shape. This deviation E sinsusoidal input voltage (E = Eo sin u;t)
is most evident for the peak-to-average current ratio,
which is somewhat higher than that for a resistive load. Eo peak input voltage
Because of the variation in current wavesh<lpes, cal- Eavg average output vol tage
culations of ratings for capacitive-load circuits are gen-
erally more complicated and time-consuming than those input frequency (Hz)
for resistive-load rectifier circuits.
u; angular frequency of input (u; = 2 1Tf radians
This Note describes a simplified rating system
per second)
which allows designers to calculate the characteristics
of capacitive-load rectifier circuits quickly and ac- time counted from beginning of cycle
curately. The effect of the addition of a series limiting
resistance to such circuits and the importance of the RS limiting resistance
ratio of the limiting resistance to capacitive reactance
RL load resistance
are described, and curves of rectifier current ratios are
presented as functions of the effective ratio. Typical C load capacitance
design examples are given, and output-ripple consider-
ations are discussed. Table I defines the symbols used 10 absolute peak current through rectifier
in the equations and calculations.
Ipk actual peak current through rectifier
Design of Capacitor-Input Circuits Irms root-mean-squafe current through rectifier
In the design of a rectifier circuit, the output vol-
tage and current, the input voltage, and the ripple and Iavg average current through rectifier
regulation requirements are usually specified. The trans-
n charge factor; 1 for half-wave circuit, Y2 for
former and the type of rectifier to be used are selected
doubler circuit, 2 for full-wave circuit
by the designer, and the load resistance is determined
on the basis of the output voltage and current require-
of the curve (pointO), and remains off until EC is again
ments. The ripple requirements are satisfied by use of
equal to E (point A). The turn on point ton is determin-
a capacitor to shunt the load RL, as shown in Fig. 1.
ed by the time constant RL C, and affects the average,
The waveforms for this circuit indicate that the voltage
across the capacitor F." coincides with the supply vol- peak, and rms currents through the device.
tage E when the rectifier is conducting in the forward As stated above, the low forward voltage drop of
direction. A high initial diode surge CUlTent IS occurs silicon rectifiers may result in a very high surge of cur-
because the capacitor acts as a short circuit when rent when the capacitive load is first energized. Al-
power is first applied. The diode turns off at the peak though the generator or source impedance may be high
Fig.! - Circuit showing use of capacitor to shunt Fig.2 - Circuit showing addition af limiting resis-
the load, and resulting waveforms. tance, and resulting waveforms.
enough to protect the rectifier, in some cases addition-

8 " '<
al resistance must be added to the generator-rectifier-
capacitor loop, as shown in Fig.2, to keep the surge
within device ratings. The waveforms in Fig.2 show
6
4 "
~ "
<14, ~
...
<Il z-........ ~~ <1~-<>
that the capacitor voltage EC is no longer coincident
with the steady state supply voltage E during any part
...
0:
~IOO
r--- J'\1q/ ~ 1<
q
8 r-...
of the cycle. The sum of the additional limiting resis- ""
~ "" SURGE RATING FOR
-1-.1."
-:c
6
CR2
tance plus the source resistance is referred to as the ...
z
0:
4 "'"
"'"
"-....1\.
total limiting resistance RS' The ratio of RS to cap- SURGE RATING FOR/"
0:
::>
<> z
CRI ~
acitive reactance 11 wC is an important consideration ... ~ ::::--....
'"
in capacitor-input rectifier circuits; ideally, RS should '"
0:
::> 10
be much smaller than 11 ",C. The magnitude of RS re- <Il
8
quired in a particular circuit is calculated as described ,.

<Il
6 .....
below.
0:
4
"- " ~
Z
"'"
Calculation of Limiting Resistance
The value of resistance required to protecl the rec-
tifier is calculated from the surge rating chart for lhe
I
"
particular device used. Fig. 3 shows surge rating charts
for diffused junction slack rectifiers CR I and CR2. Fig.3 - Surge-rating chart used for calculation of
Each point on the curves defines a surge rating by in- limiting resistance.
dicaling the maximum time for which the device can input voltage, the peak current is equal to the peak in-
safely carry a specific value of rms current.
put voltage Eo divided by the limiting resistance Rs'
With a capacitive load, maximum surge current oc- and the resulting surge Is approximates an exponentially
curs if the circuit is switched on when the input voltage decaying current with the time constant RSC,as follows:
is near its peak value. When the time constant RSC of
the surge loop is much smaller than the period of the IS = (Eo/RS) exp (-1IRSC) (1)
AN-3659 ----------------------------------
proxlmated by the following equations:
Irms t = 0.0266
This value is then plotted on Fig.3 and intersects

the CR2 rating curve at 5.4 x 10-4 second. Therefore,
the equation for the time constant is given by
The values for Eo and C specified by the circui t RSC 2. 5.4 x 10-4
design are used in Eq. (3) to obtain an equation which
relates the nns surge current lrms to surge duration t. R > 5Ax 10-4
This equation may then be plotted on the surge rating S- 10-5
chart. Because RsC is equal to t, any given value of
Rs defines a specific time t, and hence a specific point
on the plot of Eq.(3l. However, RS must be large enough
to make this point fall below the rating curve.
100
OHMS C IOfo'F
The following examples illustrate the procedure EpEAK
described for calculating the limiting resistance re- 50000 RL

OHMS
quired in a particular circuit. 100
OHMS IOflF
Example No.1: Fig. 4 shows a half-wave rectifier cir-

cuit that has a 6o-Hz frequency and a peak input voltage
Eo of 4950 volts. The values of Eo and C are substi-
tuted in Eq.(3) to obtain the value of Irmst, as follows: Fig.5. Voltage-doubler rectifier circuit (E
Eo = 3820 V, f = 60 Hz).
~mst = 0.7 (4950) (2.5 x 10 -6)
Irms t = 0.0086 Calculation of Rectifier Current

The design of rectifier circuits using capacitive
This value is then plotted on the surge-rating chart loads often requires the determination of rectifier cur-
of Fig. 3 and is found to intersect the CR J rating rent waveforms in terms of average, nns, and peak cur-
curve at 2.7 x 10-4 second. The minimum limiting re- rents. These waveforms are needed for calculations of
sistance which affords adequate surge protection is then circuit parameters, selection of components, and match-
calculated as follows: ing of circuit parameters with rectifier ratings. Actual
calculation of rectifier current is a rather lengthy pro-
RSC 22.7 x 10-4 cess. A much more direct process is to use the current-
relationship charts shown in Figs. 6 and 7. Thesecurves
can be readily used to find peak or nns current if the
R 2. 2.7 x 10 -4 - 108 ohms
S average current is known, or vice versa.
2.5 x 10-6
Because the value given for RS is 150 ohms, the circuit The ratios of peak-ta-average current and rms-to-
has adequate surge-current protection for the rectifiers. average current are shown in Fig. 6 as functions of the
circuit constants nu;CRL and RS/nRL. The quantity
wCRL is the ratio of resistive-to-capacitive reactance
in the load, and the quantity RS/RL is the ratio of lim-
iting resistance to load resistance. The factor n is re-
ferred to as the "charge factor" and is simply a multi-
plier which allows the chart to be used for various
circuit configurations. It is equal to unity for half-wave
circuits, \6 for doubler circuits, and 2 for full-wave cir-
cuits. (These values actually represent the relative
Fig.4 - Half-wove rectifier circuit (E = 3500 V rms, quantity of charge delivered to the capacitor on each
Eo = 3820 V, f = 60 Hz). cyclel.
nwCRL are given in Figs. 8,9, and 10, respectively. Output
10 I 10 10 10
ripple is shown in Fig. 11 for all three circuits. Al-
J] lJi1fIt I though these curves were originally calculated for vac-

uum-tube rectifiers, they are equlllly applicable to sili-
con rectifier circuits.
I
30
10'
8
6 I
%Rs/nRL=O.02
I 100 100
14
2
..
8
l""o- ....
~
U
80
70
w
2 ;:; 60
I
2 . 6 8 2
, .8 2
,6 8 2
, 6 8
'i'
"-~
"
r
50
fi''" 40
Fig.6 - Relation of peak, average, ond rms rectifier w
0
currents in capacitor-input circuits. 30

w
In many silicon rectifier circuits, RS may be com-

pletely neglected when compared with the magnitude of
" 20
10
RL. In such circuits, the calculation of rectifier cur-
rent is even more simplified by the use of Fig. 7, which 0
01
gives current ratios under the limitation that RS/RL ap-
proaches zero. Even if this condition is not fully sat-
isfied, the use of Fig. 7 merely indicates a higher peak
and higher rms current than will actually flow in the cir-
Fig.8 - Relation of applied alternating peak voltage
cuit; as a result, the rectifiers will operate more con-
to direct output voltage in half-wave cap-
servatively than calculated. This simplified solution
acitor.input circuits.
can be used whenever a rough approximation or a quick
check is needed on whether a rectifier will fit the ap-
200
plication. When more exact information is needed, Fig.6
should be used.
180
....
S
u
'"
U 160
"
z
1il
=>
0
'"I
140
"'"
~
0
> 120
f'"i'
0
,
w
100
I 10-1 4 6 8I 4 6 ~o 4 68102 2 4 68103 2 4 68104 "'

EFFECTIVE RATIO OF RESISTIVE TO CAPACITIVE IMPEDANCE(n CRl
" 80
Fig.7 - Forward-current ratios for rectifiers in cap-
acitor-input circuits in which the limiting
resistance is much less than 71 (,;c.
Average output voltage Eavg is another important

quantity because it can be used to find average output Fig.9 - Relation of applied alternating peak voltage
current. The relations between input and output vol tages to direct output voltage in capacitor-input
for half-wave, voltage-doubler, and full-wave circuits voltage doubler circuits.
0.05
0.5 01
I
2
The values given above are then plotted in Fig. 8 to

6
8 determine average output voltage and average output
10 current, as follows:
12,5
15 Eavl Eo 98%
% RS/RL~ 20
Eavg W.98) (4950) 4850 volts
Iavg = Eavl RL
Iavg = 4850/200,000 = 24.2 milliamperes
This val ue of Iavg is then substituted in the ratio of
Irmllavg obtained from Fig. 6, and the exact value of
rms current in the rectifier is determined, as follows:
Irml Iavg 4.4
Irms (4.4) (24.2) = 107 milliamperes
Simplified solution using Fig. 7: Average output cur-

Fig. 10 - Relation of applied alternating peak voltage rent is approximately equal to peak input voltage divided
to direct output voltage in full-wave cap- by load resistance, as given by
acitor-input circuits. Iavg E/RL
Iavg 4950/200,000 = 24.7 milliamperes
PARAMETER
This value of Iavg is then substituted in the ratio of
A":'5s,'RL Irms/lavg obtained from Fig. 7 and the approximate rms
,
::iO-iO
----30 current is determined,. as follows:
, ---0.1
w
o ~-'IO
.-01
Irms/lavg = 5.7
! 10_
~A
--10
-~IO
__ 3D Irms = (5.7) (24.7) = 141 milliamperes
~ Example No.4: For the doubler circuit of Fig. 5, the

~ resistive-to-capacitive reactance is determinedasfollows:
w
&0' wCRL = (2 n) (60) (10-5) (50,000)

~ 1
u; CRL = 189
~
o
n u; CRL '" 94
Exact solution: The ratio of Rs to RL is determined as
follows:
~_ 100 x 100%
% R - 50,000
L
This percentage is then used in conjunction with Fig. 9,
and Eavg and Iavg are determined as follows:
The following examples illustrate the use ofFigs.8
Eav/Eo 186%
through 11 in rectifier-current calculations. Both exact
and approximate solutions are given for each example. Eavg (1.86) (3820) 7100 volts
Example No.3: For the half-wave circuit of Fig. 4, Iavg = Eav/RL

the resistive-to-capacitive reactance is found to be:
Iavg = 7100/50,000 = 142 milliamperes
w CRL = (2 n )(60) (2.5 x 10-6) (200,000)
The values given above are then plotted in Fig. 6, and
w CRL = 189 the rms current is calculated as follows:
Exact solution using Fig. 6: The ratio <:i Rs to R Irmllavg = 3.7

L
must first be calculated as follows: Irms = (3.7) (142) = 525 milliamperes
Simplified solution: The average output current is given 1.57 because this value is the ratio of rms-ta-average
by current for such service (as shown by Irm/Iavg at low
u;CRL in Figs. G and 7). An example of this conversion
lavg = 2E/RL
is shown in Fig. 12 for the rating curves of seven stack
Iavg = (2 x 3820)/50,000 = 153 milliamperes rectifiers.
This value is then plotted in Fig. 7, and the rms cur- The following examples illustrate the use of the
is determined as follows: rms current ratings.
Irm/Iavg = 4.8
Example No.5: For the half-wave circuit of Fig. 4, it
Irms = (4.8) (153) = 734 milliamperes was found in Example No.3 that the actual rms current
in the rectifier is 107 milliamperes. The rms ratingcurve
As previously noted, the simplified solution in both ex- in Fig. 12 shows that the CR7 may carry up to 107 mil
amples predicted a higher rms current than the actual
liamperes at ambient temperatures up to 1150C.
value: about 32 per cent higher in Example No. 3 and
40 per cent higher in Example No.4. The amount of
error involved depends on both UJ CRL and Rs/RL. Example No.6: For the doubler circuit of Fig.5, the ac-
tual rms current was determined to be 525 milliamperes.
The !'Ins rating curve for the CR6 in Fig. 12 shows
that the circuit may be operated up to 880 C ambient
temperature.
In most technical data for rectifiers, the current-
versus-temperature ratings are gi ven in terms of average Example No.7: If the higher values of TInS current
current for a resistive load with GO-Hz sinusoidal input given by the simplified solution are used instead of the
vol tage. However, when the ratio of peak-to -average actual currents, the rms rating curves of Fig. 12 also
current becomes higher (as with capacitive loads), give more conservative ratings because they predict a
j unction heating effects become more and more depend- lower value for the maximum permissible ambient temp-
ent on rms current rather than average current. There- erature. For example, for the half-wave circuit the ex-
fore, the capacitive-load ratings should be obtained act rms current was found to be 107 milliamperes, and
from a curve of rms current as a function of tempera- the approximate value was 141 milliamperes. These
ture. The average current-rating curves for a sinusoidal current values correspond to a maximum ambient temp-
source and resistive load may be converted to rms-rat- erature rating of 1150C by the exact solution and 1100C
ing curves simply by multiplying the current axis by by the approximate solution.

E
CR'
11000
I-
1600 ~
CR2
z 1400~
OJ CR' z
~ 800
::> CR4 1200 ~
u
~ 600
1000 a
CR6
CR5 800 ~
'"~ 400
OJ
1
CR7
600 ~
":~:> 200 400 x"

x 200 "

" 0 o
-80 -60 -40 -20 0 20 40 60 80 100 140
AMBIENT TEMPERATURE-oC
Fig. 72 - Current as a function of temperature far

silicon rectifier stacks.
by
J. V. YONUSHKA
In the control of ac power by means of semiconductor then reverts again to the high-impedance or OFF state.
devices. emphasis has been placed upon limiting the com- If the voltage across the main terminals of the triac is
plexity of the circuits involved, the cost of the system, and reversed, the same switching action occurs as shown by
the over-all package size. With the development of the the curve in quadrant III. Thus, the triac is capable of
bidirectional triode thyristor, commonly known as the switching from the OFF state to the ON state for either
triac, all of these goals can be achieved. A triac can per- polarity of voltage applied to the main terminals.
form the functions of two SeR's for full-wave operation
and can easily be triggered in either direction to simplify
gate circuits. Because they are rated for 120-volt and 240-
volt line operation, triacs are readily adaptable for the
control of power to any equipment being operated directly
from ac power lines. When used for ac power control,
triacs add new functions to many designs. improve per-
formance. and provide maximum efficiency and high relia-
bility. This Note describes triac operating characteristics
and provides guidance in the use of triacs for specific
applications.
Principal Voltage-Current Characteristic Diagram
Fig. I shows the principal voltage-current characteristic QUADRANT m

of a triac. This curve shows the current through the triac MAIN TERMINAL 2
NEGATIVE
as a function of the voltage applied between main terminals ONSTAT[/
Nos. I and 2. In quadrant I, the voltage on main terminal
No. 2 is positive with respect to main terminal No. I; in
quadrant III. the voltage on main terminal No.2 is nega-
tive with respect to main terminal No. I. When a positive
voltage is applied to main terminal No.2, as shown by the
curve iJl quadrant I, a point is reached, called the break-
over voltage V BO, at which the device switches from a
high-impedance state to a low-impedance state. The cur- Gate Characteristics
rent can then be increased through the triac with only a When a trigger current is applied to the gate terminal
small increase in voltage across the device. The triac re- of a triac, the breakover voltage is reduced. After the triac
mains in the ON state until the current through the main is triggered, the current flow through the main terminals is
terminals drops below a value, called the holding current, independent of the gate signal and the triac remains in the
which cannot maintain the breakover condition. The triac ON state until the principal current is reduced below the
holding-current level. The triac has the unique capability of Because the principal current influences the gate trigger
being triggered by either a positive or a negative gate signal current, the magnitude of the current required to trigger
regardless of the voltage polarity across the main terminals the triac differs for each mode. The operating modes in
of the device. Fig. 2 illustrates the triggering mechanism which the principal current is in the same direction as the
and current flow within a triac. The gate trigger polarity is gate current require less gate trigger current, while modes
always referenced to main terminal No. I. The potential in which the principal current is in opposition to the gate
difference between the two terminals is such that gate current require more gate trigger current.
current flows in the direction indicated by the dotted Like many other semiconductor parameters, the magni-
arrow. The polarity symbol at main terminal No.2 is also tude of the gate trigger current and voltage varies with the
referenced to main terminal No. I. The semiconductor junction temperature. As the thermal excitation of carriers
materials between the various junctions within the pellet within the semiconductor increases, the increase in leakage
are labeled p and n to indicate the type of majority- current makes it easier for the device to be triggered by a
carrier concentrations within the material. gate signal. Therefore, the gate becomes more sensitive in all
operating modes as the junction temperature increases.
Conversely, if the triac is to be operated at low tempera-
tures, sufficient gate trigger current must be provided to
assure triggering of all devices at the lowest operating
temperature expected in any particular application. Varia-
tions of gate trigger requirements are given in the data
sheets for individual triacs.
Because the light output of an incandescent lamp de-

pends upon the voltage impressed upon the lamp filament,
changes in the lamp voltage vary the brightness of the
lamp. When ac source voltages are used, a triac can be
used in series with an incandescent lamp to vary the volt-
age to the lamp by changing its conduction angle; Le.,
the portion of each half cycle of ac line voltage in which
the triac conducts to provide voltage to the lamp filament.
The triac, therefore, is very attractive as a SWitching ele-
ment in light-dimming applications.
To switch incandescent-lamp loads reliably, a triac must
be able to withstand the inrush current of the lamp load.
The inrush current is a result of the difference between
the cold and hot resistance of the tungsten filament. The
cold resistance of the tungsten filament is much lower than
the hot resistance. The resulting inrush current is approxi-
For the various operating modes, the polarity of the mately 12 times the normal operating current of the lamp.
voltage on main terminal No.2 with respect to main ter- The simplest circuit that can be used for light-dimming
minal No. I is given by the quadrant in which the triac applications is shown in Fig. 3 and uses a trigger diode
operates, (either I or Ill) and the polarity of the gate signal in series with the gate of a triac to minimize the variations
used to trigger the device is given by the propcr symbol in gate trigger characteristics. Changes in the resistance in
next to the operating quadrant. For the I (+) operating series with the capacitor change the conduction angle of
mode, therefore, main terminal No.2 and the gate are both the triac.
positive with respect to main terminal No. I. Initial gate The capacitor in the circuit of Fig. 3 is charged
current flows into the gate terminal, through the p-type through the control potentiometer and the series resistance,
layer, across the junction into the n-type layer, and ".Jut The series resistance is used to protect the potentiometer
main terminal No. I, as shown by the dotted arrow. As potentiometer is at its minimum resistance setting. This
gate current flows, current multiplication occurs and the
resistor may be eliminated if the potentiometer can with-
regenerative action within the pellet switches the triac to its
stand the peak charging current until the triac turns
ON state. Because of the polarities indicated between the
main terminals, the principal current flows through the on. The trigger diode conducts when the voltage on the
pnpn structure as shown by the solid arrow. Similarly, for capacitor reaches the diode breakover voltage. The capaci-
the other three operating modes, the initial gate current tor then discharges through the trigger diode to produce a
flow is shown by the dotted arrow, and principal current current pusle of sufficient amplitude and width to trigger
flow through the main terminals is shown by the solid the triac. Because the triac can be triggered with either
arrow.
are equal to 82 in magnitude. When the circuit resistance is
increased by a change in the potentiometer selling the triac
is still triggered, but at a smaller conduction angle. Eventu-
ally, the resistance in series with the capacitance becomes
120VAC
OR so great that the voltage on the capacitor does not reach
240VAC
the breakover voltage of the trigger diode. The circuit then
60 Hz
turns off and does not turn on until the circuit resistance
is again reduced to allow the trigger diode to be fired.
The hysteresis effect makes the voltage load appear much
greater than would normally be expected when the circuit
is initially turned on.
J 20VAC, 60Hz 240VAC, 60Hz
The hysteresis effect can be reduced by use of a resistor
R, 200k!1, Y2W 250kll,lW
R, 3.3kfl. If2W 4.7kn, If2W
in series with the trigger diode and gate, as shown in Fig. 5.
C, O.lpF,200V O.lpF,400V The series resistor slows down the discharge of the capaci-
C, O.lpF,lOOV O.lpF,lOOV tor through the trigger diode. Consequently, the capacitor
V, T2800B T2800D does not lose as much charge while triggering the triac, and
V2 D3202U D3202U produces a smaller hysteresis effect. As a result of the
slower capacitor discharge through the trigger diode, how-
ever, the peak magnitude of the gate trigger current pulse
polarity of gate signal. the same operation occurs on the is reduced. The size of the trigger capacitor may have to
opposite half-cycle of the applied voltage. The triac, there- be increased to compensate for the reduction of the gate
fore, is triggered and conducts on each half-cycle of the trigger current pulse.
input supply voltage.
The interaction of the RC network and the trigger diode
results in a hysteresis effect when the triac is initially trig-
gered at small conduction angles. The hysteresis effect is
characterized by a difference in the control potentiometer
selling when the triac is first triggered and when the circuit
turns off. Fig. 4 shows the interaction betwecn the RC 120 VAC
OR
network and the trigger diode to produce the hysteresis rv 240VAC
60 Hz
effect. The capacitor voltage and the ac line voltage are
shown as solid lines. As the resistance in the circuit is
decreased from its maximum value, the capacitor voltage
reaches a value which fires tlle trigger diode. This point is
designated A on the capacitor-voltage wave-shape. When
120VAC, 60Hz 240VAC, 60Hz
the trigger diode fires, the capacitor discharges and triggers
the triac at an initial conduction angle 8,. During the form- 3.3kQ, V'lW 4.7kf!. lf2W
ing of the gate trigger pulse, the capacitor voltage drops 200H}, V'lW 250kll,lW
O.1,uF,200V O.lpF,400V
suddenly. The charge on the capacitor is smaller than when
T2800B T2800D
the trigger diode did not conduct. As a result of the differ-
D3202U D3202U
ent voltage conditions on the capacitor, the breakover
voltage of the trigger diode is reached earlier in the next Fig. 5 - Single-time-constant light-dimmer circuit with
half-cycle. This point is labeled point B on the capacitor-
series gate resistor.
voltage waveform. The conduction angle 8" corresponding to
point B is greater than 8,. All succeeding conduction angles The double-time-constant circuit in Fig. 6 improves or
lhe performance of the single-time-constant control cir-
cuit. This circuit uses an additional RC network to extend
the phase angle so that the triac can be triggered at small
conduction angles. The additional RC network also mini-
mizes the hysteresis effect. Fig. 7 shows the voltage wave-
forms for the ac supply and the trigger capacitor of the
circuit of Fig. 6. Because of the voltage drop across R3,
the input capacitor C" charges to a higher voltage than
the trigger capacitor C:,. When the voltage on C3 reaches
the brea1<over voltage of the trigger diode, the diode con-
ducts and causes the capacitor to discharge and produce
Fig. 4 - Waveforms showing interaction of control the gate current pulse to trigger the triac. After the trigger
network and trigger diode. diode turns off, the charge on C3 is partially restored by
120 VAC
OR
240 VAC
60Hz
J 20VAC, 60Hz 240VAC,60Hz
15kU,2W 30kU.3W
120VAC, 60Hz 240VAC, 60Hz
2.2kU, Y,W 3.3kU. Y,W

l00kU, Y,W 200kU,lW
O.1I'F,200V O.1I'F.400V
T28008 T2800D
D3202U D3202U
and reduces its resistance, the voltage on the capacitor can

no longer reach the breakover voltage of the trigger diode,
and the circuit turns off.
For applications requiring operation when light im-
pinges on the surface of the photocell, the circuit of Fig. 9
is recommended. In this circuit, low resistance of the
photocell allows the triac to be triggered on. When light is
removed from the photocell the increased resistance of the
photocell prevents the triac from being triggered and
renders the circuit inoperative.
Fig. 7 - Voltage waveforms of doubletime-constant

control circuit.
the charge from the input capacitor C2. The partial restora-
tion of charge on C3 results in better circuit performance
with a minimum of hysteresis.
For applications requiring a light-activated circuit, such

as outdoor lights or indoor night lights, the circuit shown in
Fig. 8 can be employed. Although this circuit functions
in the same manner as the light-dimming circuit, the
photocell controls its operation. When the light impinges
on the surface of the photocell, the resistance of the photo-
cell becomes low and prevents the voltage on the trigger
Radio Frequency Interference
capacitor from increasing to the breakover voltage of the
trigger diode. The circuit is then inoperative. When the The fast switching action of triacs when they turn on
light source is removed, the photocell becomes a high into resistive loads causes the current to rise to the instan-
resistance. The voltage on the trigger capacitor then in taneous value determined by the load in a very short period
creases to the breakover voltage of the trigger diode and of time. This fast switching action produces a current step
causes the diode to fire. The trigger pulse formed by the which is largely composed of higher-harmonic frequencies
capacitor discharge through the trigger diode makes the that have an amplitude varying inversely as the frequency.
triac conduct and operates the circuit. The triac continues In phase-control applications, such as light dimming, this
to be triggered on each half-cycle and supplies power to current step is produced on each half-cycle of the input
the load as long as the resistance of the photocell is high. voltage. Because the switching occurs many times a second.
When light again impinges on the surface of the photocell a noise pulse is generated into frequency-sensitive devices
such as AM radios and causes annoying interference. The
amplitude of the higher frequencies in the current step is
of such low levels that they do not interfere with television
or FM radio.
There are two basic types of radio-frequency interference
(RFI) associated with the switching action of triacs. One
form, radiated RFI, consists of the high-frequency energy
radiated through the air from the equipment. In most cases,
this radiated RFI is insignificant unless the radio is located
very close to the source of the radiation.
'20VAC, 60Hz 240VAC, 60Hz
Of more significance is conducted RFI which is carried
through the power lines and affects equipment attached lHl.V,W 2k!1. Y2W
to the same power lines. Because the composition of the T2700B T2700D
current waveshape consists of higher frequencies, a simple
choke placed in series with the load slows down the cur-
rent rise time and reduces the amplitude of the higher
harmonics. To be effective, however, such a choke must be
quite large. A more effective filter, and one that has been
found adequate for most light-dimming applications is
shown in Fig. 10. The LC filter provides adequate atten-
uation of the high-frequency harmonics and reduces the
noise interference to a low level.
120 VAC
OR
240 VAC '\.;
60 HZ
Fig. 12 - AC Triac Switch Control From DC Input:

at 120 VAC, Y = T2700B; at 240 VAC, Y =
120 VAC
T2700D.
OR
240 VAC
60 Hz
Fig. 13 shows a single-time-constant circuit which can

be used as a satisfactory proportional speed control for
Fig. 10 - RFI-suppression networks: at 120 VAC, C = 0.1 IlF, some applications and with certain types of induction
200 V; at 240 VAC, C = O.1 IlF,400 V. motors, such as shaded pole or permanent split-capacitor
motors, when the load is fixed. This type of circuit is best
suited to applications which require speed control in the
Triacs can be used very effectively to apply power to medium to full-power range. It is specifically useful in ap-
motors and perform such functions as speed control. revers- plications such as fans or blower-motor controls, where
ing, full power switching, or any other desired operating a small change in motor speed produces a large change in
condition that can be obtained by a switching action. Be-
cause most motors are I joe-operated, the triac can be
used as a direct replacement for electro-mechanical switches.
In proper control circuits, triacs can change the operating
characteristics of motors to obtain many different speed
and torq ue curves.
A very simple triac static switch for control of ac motors
is shown in Fig. II. The low-current switch controlling
the gate trigger current can be any type of transducer,
such as a pressure switch, a thermal switch, a photocell,
or a magnetic reed relay. This simple type of circuit allows
the motor to be switched directly from the transducer
switch without any intermediate power switch or relay. J 20VAC, 60Hz 240VAC, 60Hz
For dc control, the circuit of Fig. 12 can be used. By O.22pF,200V O.22pF,400V
use of the dc triggering modes, the triac can be directly T2700B T2700D
triggered from transistor circuits by either a pulse or con-
tinuous signal.
air velocity. Caution must be exercised if this type of cir- electronic switch used with some type of sensor to re-
cuit is used with induction motors because the motor may verse the direction of the motor. A resistance is added in
stall suddenly if the speed of the motor is reduced below series with the capacitor to limit capacitor discharge cur-
the drop-out speed for the specitic operating condition rent to a safe value whenever both triacs are conducting
determined by the conduction angle of the triac. Because simultaneously. Simultaneous conduction can easily occur
the single-time-constant circuit cannot provide speed con- because the triggered triac remains in conduction after
trol of an induction motor load from maximum power to the gate is disconnected until the current reduces to zero.
full off, but only down to some fraction of the full-power In the meantime, the nonconducting-triac gate circuit can
speed, the effects of hysteresis described previously are be energized so that both triacs are ON and large loop
not present. Speed ratios as high as 3: 1 can be obtained currents are set up in the triacs by the discharge of the
from the single-time-constant circuit used with certain capacitor.
types of induction motors.
Because motors are basically inductive loads and be-
- - -, REVERSING
cause the triac turns off when the current reduces to zero, I MOTOR
the phase difference between the applied voltage and the
device current causes the triac to tUTn off when the source 120VfJC., I
OR I
voltage is at a value other than zero. When the triac turns 240VN::.
'\...., 60 Hz I
off, the instantaneous value of input voltage is applied I
directly to the main terminals of the triac. This commutat- .-J
ing voltage may have a rate of rise which can retrigger the
triac. The commutating dv/dt can be limited to the capa-
bility of the triac by use of an RC network across the
device, as shown in Fig. 13. The current and voltage
waveshapes for the circuit are shown in Fig. 14 to illus-
trate the principle of commutating dv/dt.
J 20VAC, 60Hz 240VAC, 60Hz
T2800B T2800D
T2800B T2800D
The triac motor-reversing circuit can be extended to

electronic garage-door systems which use the principle of
motor reversing for garage-door direction control. The
system contains a transmitter, a receiver, and an operator
to provide remote control for door opening and closing.
The block diagram in Fig. 16 shows the functions required
for a complete solid-state system. When the garage door
is closed, the gate drive to the DOWN triac is disabled by
the lower-limit closure and the gate drive to the UP triac
I is inactive because of the state of the flip-flop. If the
I transmitter is momentarily keyed, the receiver activates
1
I the time-delay monostable multivibrator so that it then
I changes the flip-flop state and provides continuous gate
I COMMUT ATING drive to the UP triac. The door then continues to travel
I dv/dt
in the UP direction until the upper-limit switch closure
I
I disables gate drive to the UP triac. A second keying of the
transmitter provides the DOWN triac with gate drive and
Fig. 14 - Waveshapes of commutating dv/dt causes the door to travel in the DOWN direction until the
characteristics. gate drive is disabled by the lower limit closure. The time
in which the monostable multivibrator is active should
override normal transmitter keying for the purpose of elim-
inating erroneous tiring. A feature of this system is that,
In many industrial applications, it is necessary to reverse during travel, transmitter keying provides motor reversing
the direction of a motor, either manually or by means of independent of the upper- or lower-limit closures. Addi-
an auxiliary circuit. Fig. 15 shows a circuit which uses tional features, such as obstacle obstructions, manual con-
two triacs to provide this type of reversing motor control. trol, or time delay for overhead garage lights can be
The reversing switch can be either a manual switch or an achieved very economically.
There are three general categories of solid-state control
circuits for electric heating elements: on-off control,
r20VAC phase control, and porportional control using integral-
OR
240VAC cycle synchronous switching, Phase-control circuits, such
60 Hz
as those used for light dimming are very effective and
efficient for electric heat control except for the problem
of RFI. In higher-power applications, the RFI is of such
magnitude that suppression circuits to minimize the inter-
ference become quite bulky and expensive,
An on-off circuit for the control of resistance-heating
elements is shown in Fig. 18. The circuit also provides
synchronous switching close to the beginning of the zero-
voltage crossing of the input voltage to minimize RFI. The
thermistor controls the operation of the two-transistor re-
generative switch, which, in turn, controls the operation
of the triac. When the temperature being controlled is low,
the resistance of the thermistor is high and the regenerative
switch is OFF. The triac is then triggered directly from the
line on positive half-cycles of the input voltage. When the
Fig. 16 - Block diagram for remote-control solid-state triac triggers and applies voltage to the load, the capacitor
is charged to the peak value of the input voltage, The
garage-door systems.
capacitor discharges through the triac gate to trigger the
triac on the opposite half-cycle, The diode-resistor-capacitor
"slaving" network triggers the triac on negative half-cycles
of the ac input voltage after it is triggered on the positive
In applications in which the hysteresis effect can he half-cycle to provide integral cycles of ac power to the
tolerated or which require speed control primarily in the load.
medium to full-power range. a single-time-constant circuit When the temperature being controlled reaches the
such as that shown in Fig. 13 for induction motors can desired value as determined by the thermistor, the transis-
also be used for universal motors. However. it is usually tor regenerative switch conducts at the beginning of the
desirable to extend the range of speed control from full- positive input-voltage cycle to shunt the trigger current
power ON to very low conduction angles. The double-timc- away from the triac gate. The triac does not conduct as
constant circuit shown in Fig. 17 provides the delay neces- long as the resistance of the thermistor is low enough to
sary to trigger the triac at very low conduction angles with make the transistor regenerative switch turn on before the
a minimum of hysteresis. and also provides practically full triac can be triggered.
power to the load at the minimum-resistance position of
the control potentiometer. When this type of control cir-
cuit is used, an infinite range of motor speeds can be ob-
tained from very low to full-power speeds.
120 VAC
OR
240VAC
60 Hz
THERMISTOR
30000 AT
OPERATING
TEMP
120VAC 60Hz 240VAC, 60Hz
l00kfl, y,w 200kn,lw 120VAC.60Hz 240VAC 60Hz

c, O.lpF,200V O.lpF,400V
2.2kn,Sw 3.9kn,Sw
C, O.22pF,200V O.22pF,400V O,SpF,200V O.SpF,400V
y T2700B T2700D T4700B T4700D
Proportional Integral-Cycle Control Fig. 20. As the sawlOoth voltage increases, a level is
reached which turns on power to the heating elements. As
On-off controls have only two levels of power input to the temperature at the sensor changes, the de level shifts
the load. The heating coils are either energized to full accordingly and changes the length of time that the power
power or are at zero power. Because of thermal time con- is applied to the heating elements within the established
stants, on-off controls produce a cyclic action which alter-
time.
nates between thermal overshoots and undershoots with
When the demand for heat is high, the de control sig-
puv:' !"~solution. nal is high and little power is supplied continuously to the
This disadvantage is overcome and RFI is minimized by heating elements. When the demand for heat is completely
use of the concept of integral-cycle proportional control
satisfied, the de control signal is low and nO power is
with synchronous switching. In this system. a time base is supplied to the heating elements. Usually a system using
selected and the on-time of the triac is varied within the this principle operates continuously somewhere between
time base. The ratio of the on-to-off time of the triac full ON and full OFF to satisfy the demand for heat.
within this time interval depends upon the power required
10 the heating elements to maintain the desired temperature.
Fig. 19 shows the on-off ratio of the triac. Within the
time period. the on-time varies hy an integral number of
cycles from full ON to a single cycle of input voltage.
TRIAC
OFF
~~-i-:;-' ;-/u
r---- TRIAC ON ~ I 14-
A proportional integral-cycle heat control system is

I---- TIME BASE ~
shown in Fig. 21. The ramp voltage is generated by
HIGH HEAT charging of capacilOr C through resislOr R for approximately
2 seconds for the values shown. The length of the ramp
is determined by the voltage magnitude required to trig-
ger the regenerative switch consisting of Q, and Q2' The
temperature sensor consisting of Q:: and Q., together with
~~~~~ .~
~ TIME BASE -- ----l the controlling thermistor Th. establishes a voltage level
at the base of Q:: which depends upon the resistance value
of the thermistor. Q:: and Q. form a bistable multivibralOr.
The state of the multivibrator depends upon the base
bias of Q::. When Q:: is conducting, Q. is cut off. The
pulse generator is energized and generates pulses 10 trigger
One method of achieving integral cycle proportional con- the triac. The output of the pulse g~nerator is synchro-
trol is 10 use a fixed-frequency sawtooth generator signal nized to the line voltage or. the negative half-cycle by
which is summed with a de control signal. The sawtooth 02 and R:: and on the positive half-cycle by D, and R::.
generator establishes the period or time base of the system. The pulses are. therefore. generated at the zero-voltage
The de control signal is obtained from the output of the crossings and trigger the triaes into conduction at only
temperature-sensing network. The principle is illustrated in these points.
120 VAC
1200~AC 24~~ AC
24QVAC
IOflF
115K 60kll, Y,W 120kll. y,w

3.3kll,2W 5.6kll,2W
33kll,y,w 57kll, Y,W
2N5441 or 2N5444 2N5442 or 2N5445
NOTE: ALL RESISTORS '12 W,! 10 '"4

UNLESS OTHERWISE SPECIE
THERMISTOR APPROX. 3000 n
AT OPERATING TEMP.
Light Dimmers Using Triacs
Introduction
A simple, inexpensive light-dimmer circuit contains

a diac, triac and RC charge-control network. The diac
is a two-terminal ac switch which is changed from the
non-conducting state to the conducting state by an ap-
propriate voltage of either polarity. The triac is a
three-terminal ac switch which is changed from the non-
conducting state to the conducting state when a posi-
tive or negative voltage is applied to the gate terminal.
This Note describes the use of the diac to trigger the
triac in light-dimming circuits. The basic light-control
circuit is introduced and its operation described. In
addition, the various components added to improve cir- MAIN TERMINAL 2
NEGATIVE
cuit performance are discussed. Three complete cir-
ON 5TATE/
cuits are shown, with tables showing the component
values to be used for 120-volt, 60-Hz operation and
240-volt, 50/60 Hz operation. Mechanical details in-
volved in building the circuits are also discussed and a
trouble-shooting chart is included.
between gate and T l' The device then remains in the

Ci rcuit Description
on state until current is reduced close to zero by the
The triac or bidirectional triode thyristor is a three- external circuitry.
terminal solid-state switch. The two power electrodes
or main terminals are referred to as T 1 and T 2' and the The diac or symmetrical trigger diode is a two-ter-
control. electrode is referred to as the gate. Fig. 1 minal bidirectional switch with a voltage-eurrent char-
shows the voltage-current characteristic observed be- acteristic as shown in Fig. 2. The device exhibits a
tween the power electrodes. For either polarity of ap- high-impedance, low-leakage-current characteristic un-
plied voltage, the device is bistable: the triac exhibits til the applied voltage reaches the breakover voltage
either a high impedance (off state) or a low impedance VSO' of the order of 35 volts. Above this voltage the
(on state). The device normally assumes the off state device exhibits a negative resistance, so that voltage
when bias is applied, but can be triggered into the on decreases as current increases. In light-dimmer cir-
state by a pulse of current, of either polarity, applied cuits a diac is used in conjunction with a capacitor to
generate current pulses which trigger the triac into con-
duction. The voltage on the diac and capacitor in-
creases until it reaches VBa, at which point the diac
voltage breaks back and a pulse of current flows as the
capacitor discharges.
control must be turned back to a much lower setting be-

fore the light goes completely out.
Besides poor control, hysteresis is undesirable be-

cause at low illumination levels, the light may be ex-
tinguished by a momentary drop in line voltage. At low
illumination levels, the potentiometer is normally turned
back beyond the selling at which it initially turned on.
When triggering is missed on one half cycle as a result
of a momentary drop in line voltage such as that caused
by starting a heavy appliance, oil burner, etc., the light
Fig. 3 shows the basic triac-diac light control cir- may go out and stay out until the control is again turned
cuit with the triac connected in a series with the load. up to the starting point.
During the beginning of each half cycle the triac is in
the off-state. As a result, the entire line voltage ap- Hysteresis is caused by an abrupt decrease in ca-
pears across the triac, and none appears across the pacitor voltage when triggering begins. Fig. 4 shows
load. Because the triac is in parallel with the poten- the charging cycle of the capacitor-diac circuit. The
tiometer and capacitor, the voltage across the triac large ac sine wave represents the line voltage; the
drives current through the potentiometer and charges the smaller ac sine wave represents the normal charging
capacitor. When the capacitor voltage reaches the cycle of the capacitor. Gate triggering occurs at the
breakover voltage VBa of the diac, the capacitor dis- first point of intersection of the two waves. At this
charges through the triac gate, turning on the triac. At point, however, there is an abrupt decrease in the ca-
this point, the line voltage is transferred from the triac pacitor voltage (dashed line). As a result, the capaci-
to the load for the remainder of that half cycle. This tor begins to charge during the next half cycle at a low-
sequence of events is repeated for every half cycle of er voltage and reaches the trigger voltage in the oppo-
either polarity. If the potentiometer resistance is re- site direction earlier in the cycle (2nd (Actual) Gate
duced, the capacitor charges more rapidly and VBa is Trigger Point). Hysteresis is reduced by maintaining
reached earlier in the cycle, increasing the power ap- some voltage on the capacitor during gate triggering.
plied to the load and hence the intensity of light. If the
potentiometer resistance is increased, triggering occurs
later, load power is reduced, and the light intensity is
decreased.
Although the basic light-control circuit operates

with the component arrangement shown in Fig. 3, addi-
tional components and sections are usually added to re-
duce hysteresis effects, extend the effective range of
the light-control potentiometer, and suppress radio-fre-
quency interference.
Fig.4 - Charging cycle of the capacitor-diac network

Hysteresis in the circuit of Fig.3.
As applied to light controls, the term hysteresis re-
fers to a difference in the control potentiometer setting Some improvement is realized when a resistor is
at \'!h ich the light initially turns-on and the setting at connected in series with the diac, as shown in Fig. 5.
which it is extinguished. With high hysteresis, the con- Although this positive resistance reduces the net a-
trol may have to be turned across 35 per cent of its mount of negative resistance so the capacitor voltage
range before the light turns on at all, after which the does not drop as much, it also decreases the magnitude
t20VAC
OR
240VAC
60 Hz
Fig.S - Light-control circuit incorporating a resistor in Fig.8 - Double-time-constant circuit in which the poten-
series with the diac. tiometer is connected directly to the diac.
of the gate current pulse,and therefore, a larger-valueca-

After the control circuit is assembled, the point of ini-
pacitor may be required. More significant improvement
tial turn-on may be located at 40 per cent across the
is obtained when a second capacitor 'is added as shown
control range, leaving only 60 per cent effective to con-
in Fig. 6, forming a "double-time-constant" circuit.
trol the light intensity. This difference occurs because
the point of initial turn-on is determined by the inter-
action of three components (potentiometer, capacitor,
and diac) each of which may have values with a toler-
ance of plus or minus 20 per cent. A trimmer resistor
connected across the potentiometer, as shown in Fig. 9,
can be used to compensate for component variations and
move the initial turn-on point back to the end of the
control range. The trimmer can be a variable resistor
which is set to the required value after the circuit is
assembled, or a fixed resistor of the required value as
determined by individually testing the assemblies with
The added capacitor C2 reduces hysteresis by charging a resistor substitution box in place of the trimmer.
to a higher voltage than C l' and maintaining some volt-
age on C 1 after triggering. The effect is illustrated in The double-lime-constant circuit with trimmer re-
Fig. 7. As gate triggering occurs C1 discharges to form sistor provides consistently good hysteresis correction
the gate current pulse. However, because of the longer as well as good range control. The use of a high-re-
C2 R time constant, C2 restores some of the charge resistance potentiometer, possibly about twice the re-
moved from C 1 by the gate current pulse. sistance of the trimmer, spreads out the low-intensity
range for finer control.
" (THEORETICAL)
2n'
GATE TRIGGER
POINT
Fig.7 Charging cycle of the diac network in the circuit

of Fig.6.
Fig. 8 shows another double-time constant circuit

in which a fixed resistor is added and the potentiometer
is moved over to connect directly to the diac. Although
the maximum attainable conduction angle is increased,
the difference in power is less than one per cent.
Range Control
Maximum range of light control is obtained when the
lamp begins to light as soon as the potentiometer is Fig.9 - Light-control circuits incorporating a trimmer
turned slightly from the zero-intensity end of the range. resistor across the potentiometer.
::'LdLt LV LlIt J.UW-.lIl1l-'tUdllL.t ::'LdLt Wll1lUI .L VI ,,{. 1Il1L.IV-
nues until the bulb fuse opens, and may last for some-
seconds, the current must rise from essentially zero to
what more than one half cycle. Damage or degradation
whatever the load will permit within this period. This
of the triac can be avoided by selection of a triac that
rapid rise in current produces radio frequency interfer-
has surge capability in excess of the flashover currents
ence (RFI) extending up into the range of several mega-
which can occur. A device capable of handling a one-
hertz. Although the resulting noise does not affect the
cycle peak current of 100 amperes or more is adequate
television and FM radio frequencies, it does affect the
for most installations using up to ISO-watt bulbs. When
short-wave and AM-radio bands. The level of RFI pro-
the triac has inadequate surge capability for a particular
duced by the triac is well below that produced by most
application, special high-speed fuses or circuit break-
AC-DC brush-type electric motors, but because the light
ers, external resistors, or other current limiting devices
dimmer may be on for long periods of time, some type of
such as chokes may be used.
RFI suppression network is usually added. A reason-
ably effective suppression network is obtained, as
Light-Dimmer Circuits
120 VAC LIGHT
2.3~AC J' CONTROL

CIRCUIT
Fig. 11 shows a single-time-constant circuit; Fig.
60 Hz
12 shows a double-time-constant circuit. Both are com-
plete circuits suitable for operation at 120 or 240 volts
ac, 50 or 60 Hz. The chart with each circuit specifies
the values of components which change with the line
voltage. The resistor in series with the potentiometer
shown in Fig. 10, by connection of an inductor in series in each circuit is used to protect the potentiometer by
with the light-control circuit to limit the rate of current limiting the current when the potentiometer is at the
rise. The capacitor is connected across the entire net- low-resistance end of its range.
work to bypass high-frequency signals so that they are
not connected to any external circuits through the pow-
er lines.
Overload Considerations
An important consideration in the choice of a triac It is important to remember that a triac in these cir-
is the transient load which results from the initially cuits dissipates power at the rate of about one watt per
lower resistance of the cold filament when the lamp is am{lere. Therefore, some means of removing heat must
first turned on. The transient load results in a surge or be provided to keep the device within its safe operat-
inrush current which can destroy the triac. The ing-temperature range. On a small light-eontrol circuit
worst case occurs when the light is sw itched on at the such as one built into a lamp socket, the lead-in wire
peak of the line voltage. The ratio of initial peak cur- serves as an effective heat sink. Attachment of the
rent to steady-state current is usually about 10 to 1 and triac case directly to one of the lead-in wires provides
can be as high as 15 to 1 for high-wattage lamps. The sufficient heat dissipation for operating currents up to
triac chosen for a particular lamp, therefore, should 2 amperes (rms). On wall-mounted controls operating
have a subcycle surge capability sufficient to allow re- up to 6 amperes, the combination of face plate and wall-
peated passage of this peak current without degradation box serves as an effective heat sink. For higher-power
of the device. controls, however, the ordinary face plate and wallbox
do not provide sufficient heat-sinking area. In this
Flashover is another transient condition associated case, additional area may be obtained by use of a fin-
with incandescent loads, and may impose an even great- ned face plate that has a cover plate which stands out
er stress than inrush. Flashover refers to the arc de- from the wall so air can circulate freely over the fins.
veloped between the broken ends of the filament when
the light bulb burns out. Ionization within the bulb al- On wall-mounted controls, it is also important that
lows the arc to flow directly between the internal lead- the triac be electrically isolated from the face .plate,
in wires, and current is then limited only by line imped- but at the same time be in good thermal contact with it.
ance. Because of the large currents associated with Although the thermal conductivity of most electrical in-
flashover, incandescent light bulbs have fuses built sulators is relatively low when compared with metals, a
into the stem to open circuit at the bulb without opening low-thermal-resistance, electrically isolated bond of
the line circuit breaker. On low-wattage bulbs, the arc triac to face plate can be obtained if the thickness of
R2 3300 ohms, y, W
Cl 0.05 f.LF, 100V 0.1 f.LF, 100V

120 VAC
'"\, 2480AC C2 0.05 f.LF, 100V 0.10 f.LF, 100V (60 Hz)
60 Hz
0.12 f.LF, 100V (50 Hz)
L 100 f.LH 200 f.LH
Yl D3202U D3202U
Y2 T2800B
R
l
0.1 megohm, y,w
R2 2200 ohms, Y,W 0.2 megohm, lW (60 Hz)
120 VAC R, 0.25 megohm, lW (50 Hz)
OR
'"\- 240 V AC
60 Hz C1C2 0.1 f.LF, 200V 0.1 f.LF,400V
C, C2 L 100 f.LH 200 f.LH
~ Yl D3202U D3202U
Y2 T2800B T2800D
the insulator is minimized, and the area for heat trans- age; in Fig. 13(b), the new plastic package. Electrical
fer through the insulator is maximized. Suitable insula- insulating tape is first placed over the inside of the
ting materials are fiber-glass tape, ceramic sheet, mica, face plate. The triac is then mounted to the insulated
and polyimide film. Fig. 13 shows two examples of iso- face plate by use of epoxy-resin cement.
lated mounting for triacs: in Fig. 13(a) , a TO-5 pack-
ELECTRICAL TAPE
ELECTRICAL TAPE
THERMOSETTING ONE SIDE
THERMOSETTING ONE SIDE
(SCOTCH BRAND ELECTRICAL
(SCOTCH- BRAND ELECTRICAL
TAPE No 27)
TAPE No. 27)
Trouble Shooting
Some malfunctions which can occur in light-dimming circuits are listed with their possible
causes, as follows:
Light remains on full Triac Shorted in both directions caused by flashover

intensity and will not or high current surge.
dim. Wiring Anode-cathode or anode-gate shorted.
Light intensity can be Triac Breakover voltage reduced in one or both

varied but fails to reach directions.
zero.
Diac Low breakover voltage.
Triggering
Capacitance too low.
Capacitor
Potentiometer Maximum resistance too low.
Discontinuity in bright- Triac IGT too high in one mode.

ness at about half
Diac Breakover not symmetrical.
intensity.
Flickerir,g exists at Triac Low commutating dv/ dt capability. Flickering

low intensity. stops when the inductor is shorted.
Light out over most of Triac IGT too high.

the control range; turns
Diac Voltage breakback too low.
on full intensity near low
resistance end of potent i- Wiring Diac not included or shorted out.
ometer.
Same effect as preceding, Triac Internal short gate to cathode (very unlikely because
but accompanied by arc- such devices are rejected by 100 per cent electrical
ing in potentiometer. test).
Capacitor Shorted (this condition destroys the potentiometer,

but not the triac).
Wiring Open anode contact (this condition destroys both the
potentiometer and the triac). Cathode to gate short
(this condition destroys only the potentiometer).
Light fails to turn on Triac Open gate contact (very unlikely due to the 100 per
at all. cent electrical test by manufacturer).
Diac Open
Potentiometer Open
Wiring Open circuit at potentiometer, diac, triac gate, or
cathode.
[lli(]5LJD Thyristors
Division
AN-3780
A New Horizontal-Deflection System Using

RCA S3705M and S3706M Silicon Controlled Rectifiers
This Note describes a highly reliable horizontal-de- rectly from a conventional, unregulated dc power sup-
flection system designed for use in the RCA CTC-40 ply of + 155 volts, provides full-screen deflection at
solid-state color television receiver. This system illus- angles up to 90 degrees at full beam current (1.5 milli-
trates a new approach in horizontal-circuit design that amperes average in the CTC-40 receiver). The current
represents a complete departure from the approaches and voltage waveforms required for horizontal deflec-
currently used in commercial television receivers. The
tion and for generation of the high voltage are derived
switching action required to generate the scan current
essentially from LC resonant circuit>. As a result, fast
in the horizontal yoke windings and the high-voltage
and abrupt switching transients, which would impose
pulse used to derive the dc operating voltages for the
strains on the solid-state devices, are avoided.
picture tube is controlled by two silicon controlled rec-
tifiers (SCR's) that are used in conjunction with asso- A regulator stage is included in the SCR horizontal-
ciated fast-recovery diodes to form bipolar switches. deflection circuit to maintain the scan and the high
The RCA-S370SM SCR used to control the trace cur- voltage within acceptable limits with variations in the
rent and the RCA-S3706M SCR that provides the com- ac line voltage or picture-tube beam current. The
mutating action to initiate trace-retrace switching system also contains circuits that provide full protection
exhibit the high voltage- and current-handling capa- against the effects of arcs in the picture tube or the high-
bilities, together with the the excellent switching char- voltage rectifier and linearity and pincushion correction
acteristics, required for reliable operation in deflection- circuits. Each individual part of the deflection system is
system applications. The switching diodes, RCA-D2601EF designed to specifications that are compatible with
(trace) and D260 I DF (commutating), provide fast re-
achievement of the following system performance:
covery times, high reverse-voltage blocking capabilities,
and low turn-on voltage drops. These features and the
fact that, with the exception of one non-critical trigger-
ing pulse, all control voltages, timing, and control po- 25-inch, 90-degree color type; neck diameter =
larities are supplied by passive elements within the 1 YJ. 6 inches (i.e_, similar to RCA- Type
system (rather than by external drive sources) con- 25XP22)
tribute substantially to the excellent reliability of the
SCR deflection system.
U1tor Voltage, Beam Current, and Regulation
26.5 kilovolts at zero beam current or 24.5
kilovolts at 1.5 milliamperes (average) of beam
Fig. 1 shows the circuit configuration of the over-all current for ac line voltages of i20 to 130 volts
horizontal-deflection system. The system operates di- rms
HIGH-VOLTAGE
REGULATOR
TYPE 2N4064
SATURABLE
REACTOR
LSR
F.=-----------d
IOOOpF
J;-
SCRT
ReA
S3705M
24.5 kilovolts at 1 milliampere of beam current Total flyback pulse width = 14 microseconds
for ac line voltages of 108 to 130 volts rms at extremes of yoke voltage
22.5 kilovolts at 1.5 milliamperes of beam cur- Trigger Input
rent for an ac line voltage of 105 volts rms
10-volt, 5-microsecond pulse (obtained directly
Input Current from horizontal oscillator)
420 milliamperes at zero beam current Pincushion Correction
670 milJiamperes at 1.5 milliamperes of beam Top and bottom pincushion correction provided
current for a minimum radius of 150 inches
DC Input Voltage (Nominal)
REQUIREMENTS OF THE SWITCHING SCR's AND
155 volts at zero beam current DIODES
148 volts at 1.5 milliamperes of beam current The SCR horizontal-deflection circuit requires fast
Scan Regulation* reverse recovery for both the switching SCR's and the
diodes and fast turn-on for the SCR's. The S3705M and
%-inch change for variation in ac line voltage S3706M SCR's and the 0260 I EF and D260 I DF diodes are
from 105 to 130 volts rms well suited to provide this type of performance. (De-
% ~inch change for beam-current variation of tailed specifications for the SCR's and diodes are given
0.3 to 1.5 milliamperes at a line voltage of 120 in the published data on the devices). The exceptional
volts rms capabilities of these devices are illustrated by the per-
formance that they provide in the horizontal-deflection
Linearity* system. Fig. 2 shows the significant current and voltage
Deviation in picture width is equal to or less waveforms that the SCR's and diodes are subjected to
than 5 per cent, left to right during operation of the deflection circuit.
The S3706M SCR used in the commutating switch is
Retrace Time required to pass a pulse of current that has a peak
Flyback pulse width = 12.5 microseconds at amplitude of 13 amperes and an initial rate of rise of
zero crossing of yoke voltage 20 amperes per microsecond. At the operating fre-
quency of the horizontal-deflection circuit, achievement
of this performance requires low turn-on dissipation in
'UILS pt:r mlcrosecona. NegatIve gate bias is used with
An SCR is turned off by a reversal of its anode-to- both SCR's to reduce turn-off time. The gate sensi-
cathode voltage; before the forward voltage can be re- tivity of the commutating-switch SCR is high enough so
applied, a short time is required to allow the device to that this device can be triggered directly from the
horizontal oscillator.
The exceptional switching performance provided by
the S370SM and S3706M seR's is made possible by use of
all-diffused pellet structures that employ a centrally
located gate having a large gate-cathode periphery to
->I i'-4.5,., I ensure low initial forward voltage drops and, therefore,
toff
I low switching losses. The lifetime of minority charge car-
COMMUTATING- SWITCH VOLTAGE I
riers is substantially reduced to provide the fast turn-
(DIODE AND seRl I
I off-time capability. The "shorted-emitter" construction
technique, in which a low-resistance path is provided
COMMUTATING-$WITCH __ '
seR CURRENT
around the gate-to-cathode junction, is used to obtain
the high dv /dt capability required for the SCR's to
withstand the high rates of reapplied forward voltage
I COMMUTATING- SWITC~ OIOOE CURRENT
I I encountered in the horizontal-deflection system.
I I The D260 I EF and D260 I DF diodes used in the trace and
commutating switches, respectively, are designed to
obc-=-~~-----~~----
I I
provide fast reverse recovery (by means of minority-
carrier lifetime control), to reduce rf interference in the
I CQMMUTATING-$W1TCH seR GATE SIGNAL
circuit, and to decrease diode recovery losses. The slope
U\
and magnitude of the reverse-recovery current in the
diodes have been optimized to ensure minimum reverse-
recovery dissipation and to prevent rf interference be-
: 17SvI,., TRACE -SWITCH VOLTAG~

i cause of overly abrupt recovery. The fast recovery char-
acteristics have been achieved while maintaining a low
SLOPE (DIODE AND SeR) turn-on voltage drop and a high reverse-voltage block-
ing capability.
I
I
1
0--
I
The essential components in the SCR horizontal-
I
deflection system required to develop the scan current
I
in the yoke windings are shown in Fig. 3. Essentially
I
0-1- --
HIGH-VOLTAGE
I TRANSFORMER
I r----,
I
I
I
1
[:
Fig. 2 - Voltage and current wavelorms applied to the SCR's
II[ :
and diodes used to control the switching actions in the
SCR horizontal-deflection system.
E:
[:
__ J
regain its forward-blocking capability. Under worst-
case conditions, the available turn-off time for the
commutating switch requires the use of an SCR that
can be completely turned off in 4.5 microseconds. The
SCR must then be able to block a reapplied forward
voltage of 100 volts applied at a rate of 400 volts per
microsecond. The turn-off requirement for the trace- Fig. 3 - Basic circuit lor generation of the deflection ..current
switch SCR, under worst-case circuit conditions, is 2.5 waveform ill the horiz.ontal yoke winding.
the trace-switch diode DT and the trace-switch con- the trace deflection-current interval, the period from
trolled rectifier SCRT provide the switching action To to T 2' At time To, the magnetic field has been estab-
which controls the current in the horizontal yoke wind- lished about the horizontal yoke windings Ly by the
ings Ly during the picture-tube beam-trace interval. circuit action during the retrace period of the preceding
The commutating-switch diode Dc and the commutat- cycle (explained in the subsequent discussion of retrace
ing-switch controlled rectifier SCRc initiate retrace and intervals). This magnetic field generates a decaying
control the yoke current during the retrace interval. yoke current iy that decreases to zero when the energy
Inductor Ln and capacitors, Cn, CA, and Cy provide the in the yoke winding is depleted (at time T2). This
necessary energy storage and timing cycles. Inductor current charges capacitor C,. to a positive voltage V cy
Lec supplies a charge path for capacitor Cn from the dc through the trace-switch diode DT
supply voltage (B +) so that the system can be re- During the first half of the trace interval (just prior
charged from the receiver power supply. The secondary to time T 2) the trace controlled rectifier SCRT is
of inductor Lee, provides the gate trigger voltage for made ready to conduct by application of an appropriate
the trace-switch SCR. Capacitor Cn establishes the gate voltage pulse VOATE' SCRT does not conduct, how-
optimum retrace time by virtue of its resonant action ever, until a forward bias is also applied between its
with inductor Ln. anode and cathode. This voltage is applied during the
The complete horizontal-deflection cycle may best be second half of the trace interval.
described as a sequence of discrete intervals, each ter-
minated by a change in the conduction state of a
switching device. In the following discussion, the action
of the auxiliary capacitor CA and the flyback high-
voltage transformer are initially neglected to simplify At time T2, current is no longer maintained by
the explanation. the yoke inductance, and capacitor C,. begins to
discharge into this inductance. The direction of the
current in the circuit is then reversed, and the trace-
switch diode DT becomes reverse-biased. The trace-
Fig. 4 shows the circuit elements involved and the switch controlled rectifier SCRT, however, is then for-
voltage and current relationships during the first half of ward-biased by the voltage V Cy across the capacitor,
and the capacitor discharges into the yoke inductance
through SCRT, as indicated in Fig. 5. The capacitor Cy
o--~------ Fig. 5 - Effective configuration of the deflection circuit during

the second half of the trace interval. time T2 to T 5.
and the complete scan-current waveform.
Fig. 4 - Effective configuration of the deflection circuit during
the first half of the trace interval, time To to T2. and
operating voltage and current waveforms for the is sufficiently large so that the voltage V Cy remains
complete frace-retrace cycle. essentially constant during the entire trace and retrace
cycle. This constant voltage results in a linear rise in cess current in the commutating pulse is tben bypassed
current through the yoke inductance Ly over the entire around the yoke winding by the shunting action of
scan interval from Toto T 5' diode DT. During the time from T 4 to T 5, the trace-
switch controlled rectifier SCRT is reverse-biased by the
amount of the voltage drop across diode DT The trace-
switch controlled rectifier, therefore, is turned off dur-
ing this interval and is allowed to recover its ability to
The circuit action to initiate retrace starts before the block the forward voltage that is subsequently applied.
trace interval is completed. Fig. 6 shows the circuit
elements and the voltage and current waveforms re-
quired for this action. At time T 3, prior to the end of
At time T5, the commutating pulse is no longer
greater than the yoke current, as shown in Fig. 7;
trace-switch diode DT then ceases to conduct. The yoke
inductance maintains the yoke current but, with SCRT
in the OFF state, this current now flows in the commu-
tating loop formed by LR, CR, and SCR:,. Time T 5 is
the beginning of retrace.
As the current in the yoke windings decreases to
zero, the energy supplied by this current charges ca-
pacitor CR with an opposite-polarity voltage in a
resonant oscillation. At time T6, the yoke current is
zero, and capacitor CR is charged to its maximum nega-
tive voltage value. This action completes the first half
of retrace.
~
0- - - - -I~--
I
VGATE I
o~---
Fig. 6;- Effective configuration of the deflection circuit and

significant vol/age and current waveforms for initiation
of retrace, time T3 to Tj.
the trace period, the commutating-switch controlled

rectifier SCRc is turned on by application of a pulse
from the horizontal oscillator to its gate. Capacitor CR I
Y I
is then allowed to discharge through SCR:, and in-
ductor LR. The current in this loop, referred to as the 0- ~ - ~-
commutating circuit, builds up in the form of a half-
sine-wave pulse. At time T4, when the magnitude of
Fig. 7 - Effective configuration of the deflection circuit and
this current pulse exceeds the yoke current, the trace-
operating voltage and current waveforms during the
switch diode DT again becomes forward-biased. The ex- first half of retrace, time T 5 to T 6.
At time T G, the energy in the yoke inductance is
depleted, and the stored energy on the retrace capaci-
tor Cn is then returned to the yoke inductance. This
action reverses the direction of current flow in the yoke.
During the reversal of yoke current, the commutating-
switch diode Dc provides the return path for the loop
current, as indicated in Fig. 8. The com mutating-
Fig. 9- Effective configuration oj/he deflection circuit during

the slt'itchover from retrace 10 trace, time To.
accomplished in a relatively short period, Toto T 1, as

shown in Fig. 8.
The actions required to restore energy to the com-

mutating circuit and to reset the trace SCR are also
very important considerations in the operation of the
basic deflection circuit. Both actions involve the in-
ductor Lee.
During the retrace period, inductor Lee is connected
between the dc supply voltage (B +) and ground by
the conduction of either the commutating-switch SCR
or diode (SCRe or Dc), as indicated in Fig. 10.
When the diode and the SCR cease to conduct, how-
ever, the path from Lee to ground is opened. The
energy stored in inductor Lee during the retrace interval
then charges capacitor Cn through the B + supply, as
Fig. 8 - Effective configuration of the deflection circuit and shown in Fig. 1 I. This charging process continues
operating voltage and curren! waveforms during the through the trace period until retrace is again initiated.
second half of retrace, time Tn to To The resultant charge on capacitor Cn is used to re-
supply energy to the yoke circuit during the retrace
interval.
switch controlled rectifier SCRe is reverse-biased by the
The voltage developed across inductor Lee during
amount of the voltage drop across diode Dc. The the charging of capacitor Cn is used to forward-bias the
commutating-switch controlled rectifier, therefore, turns gate electrode of the trace SCR properly so that this
off and recovers its voltage-blocking capability. As the
yoke current builds up in the negative direction, the
voltage on the retrace capacitor Cn is decreased. At
time To, the voltage across capacitor Cn no longer
provides a driving voltage for the yoke current to flow
in the loop formed by Ln, Cn, and Ly The yoke cur-
rent finds an easier path up through trace-switch diode
DT, as shown in Fig. 9. This action represents the
beginning of the trace period for the yoke current
(i.e., the start of a new cycle of operation), time To.
Once the negative yoke current is decoupled from
the commutating loop by the trace-switch diode, the
current in the commutating circuit decays to zero. The
Fig. 10 - Circuit elements and current path used to supply
stored energy in the inductor Ln charges capacitor Cn
energy to the charging choke Lee during period from the
to an initial value of positive voltage. Because the reso- start of retrace switching action to the end of the first
nant frequency of Ln and Cn is high, this transfer is half of the retrace interval, time T:~ to T1.
device is made ready to conduct. This voltage is in-
ductively coupled from 4Jc and applied to the gate of
SCRr through to a wave-shaping network formed by
inductor 4, capacitor CG, and resistor RG The result-
ing voltage signal applied to the gate of SCRT has the
desired shape and amplitude so that SCRT conducts
when a forward bias is applied from anode to cathode,
approximately midway through the trace interval.
Fig. 11 - Effective configuration of the deflection circuit for

resetting (application of forward bias /0) the trace SCR
and recharging rhe retrace capacitor CR, during time
interval from T 1 10 T;~.
Fig. 12 - Circuit configuration showing the addition of

auxiliary capacitor CA and current and voltage
waveforms showing the eOect of this capacitor.
In the preceding discussions of the operation of the

deflection circuit, the effect of capacitor CA was ne-
glected. Inclusion of this capacitor affects some of the
circuit waveforms, as shown in Fig. 12, aids in the The SCR horizontal-deflection system in the RCA
turn-off of the trace SCR, reduces the retrace time, CTC-40 receiver generates the high voltage for the
and provides additional energy-storage capability for picture tube in essentially the same manner as has been
the circuit. used for many years in other commercial television re-
During most of the trace interval ( from To to T.), ceivers, i.e., by transformation of the horizontal-deflec-
including the interval (T 3 to T 4) during which the tion retrace (f1yback) pulse to a high voltage with a
commutating pulse occurs, the trace switch is closed, voltage step-up transformer and subsequent rectification
and capacitor CA is in parallel with the retrace ca- of this stepped-up voltage. The RCA-3CZ3 electron
pacitor CR. From the start of retrace at time T 4 to the tube is used as the high-voltage rectifier in the RCA
beginning of the next trace interval at time To, the trace
CTC-40 television receiver.
switch is open. For this condition, capacitor CA is in
Fig. 13 shows a schematic of the over-all high-
series with the yoke L, and the retrace capacitor CR so
voltage circuit, and Fig. 14 shows a simplified sche-
that the capacitance in the retrace circuit is effectively
decreased. As a result, the resonant frequency of the matic of this circuit together with the significant voltage
retrace is increased, and the retrace time is reduced. and current waveforms. The high-voltage transformer
The auxiliary capacitor CA is also in parallel with the is connected across the yoke and retrace capacitor. The
retrace inductor LR. The waveshapes in the deflection inductance and capacitance of this transformer are such
circuit are also affected by the resultant higher-fre- that it presents a load tuned to about the third har-
quency resonant discharge around this loop. The volt- monic of the retrace resonant frequency. The presence
age and current waveforms shown in Fig. 12 illustrate of this load adds harmonic components to the wave-
the effects of the capacitor CA' forms previously described.
output trace circuit. As stated previously, the trace
circuit is supplied by energy which is stored primarily
on the com mutating capacitor CR' This capacitor is
charged during the trace interval through inductance
Lee.
Control of the high-voltage energy on the commutat-
ing capacitor is made possible by the design of in-
FOCUS AND ductor Lee so that it approaches resonance with ca-
SCREEN
SUPPLY pacitor Cn; the degree of this resonance can be varied
by the high-voltage regulator circuit.
Fig. 15 illustrates the effect of this resonant action
HORIZ.
UTILITY on the charge on the commutating capacitor. The wave-
shape that results from the resonant action determines
:~LCLAMP
lIN.~~
the amount of charge that will be on the capacitor when
its energy is released into the trace circuit.
ICy ADJ.
The resonance of the inductor Ler and the commu-
tating capacitor Cn is varied by use of a saturable
reactor Lsn to control the inductance across L('r. The
saturable-reactor load winding is placed in parallel with
Lee. Changes in the current through the reactor control
windings varies the total inductance of the input circuit.
The current in the reactor load winding is controlled
by the pulse regulator circuit.
The control current for the reactor control winding is
determined by the conduction of the high-voltage regu-
The high voltage is regulated by controlling the
lator transistor Q". The collector current of this tran-
amount of energy made available to the horizontal-
sistor is in turn controlled by the voltage across the
yoke-return capacitor C. This voltage, which is directly
proportional to high voltage and which tracks any
changes in the high voltage, is sampled by the high-
voltage adjustment control and compared to a refer-
ence voltage determined by a Zener diode. The result-
ing difference voltage, which is indicative of changes in
the high voltage, controls the conduction of the regu-
lator transistor.
As the high-voltage load (beam current) decreases,
the high voltage tends to increase. The voltage across
the yoke-return capacitor then tends to increase. This
action results in an instantaneously higher current pulse
through the base-emitter junction of the regulator tran-
sistor. The reactor control current, therefore, tends to
increase proportionally, so that the total inductance of
the input circuit is decreased. The resulting change in
resonance of Lee, L,n, and Cn reduces the charge on
CR and the energy made available to the trace circuit.
In this way, the high voltage is stabilized. The reverse
action, of course, occurs if the high voltage tends to
decrease.
f\... '(Ly+CyJ
Diode DIm acts as an energy-recovery diode which
improves the efficiency of the control circuit. The regu-
lator transistor actually conducts only for a very short
time, and the majority of the control current is supplied
o--~--~-
by diode conduction. This high-voltage regulating sys-
tem also maintains the high voltage within acceptable
Fig. 14 - Simplified schematic and significant voltage and limits for variations in the ac line voltage over the
current waveforms for the high-voltage circuit. range from 105 to 130 volts.
r--I
These components dampen the high ringing current that
-J:iL'51 may occur as a result of high-voltage arcing. This cur-
=1=1
L __ -J rent is mainly dissipated in the resistor Ro; The prin-
cipal purpose of the shunting diode is to allow the
normal initial flyback current to flow unimpeded so that
the high voltage is not decreased by the dampening
Ly HV.II
TRANS.
action of the resistor.
The other protection circuit consists of a diode
(DcL), a capacitor (CCL) connected between the diode
cathode and ground, and a resistor ReL from the diode
cathode to the B + supply v.oltage. The anode of the
diode is connected to the ungrounded end of the pri-
mary of the high-voltage transformer. The diode con-
ducts during the peak of the retrace voltage pulse that
appears across the primary of the high-voltage trans-
former and charges the capacitor to this voltage. The
resistor provides a high-resistance discharge path for
the capacitor and allows the voltage across the capaci-
tor to be reduced just enough to keep the diode re-
verse-biased during the retrace interval. When a sharp
voltage pulse is produced because of high-voltage arc-
ing, the diode conducts so that the trace switch is
-~ clamped to the voltage across the capacitor. The arc
pulse voltage, therefore, is not allowed to exceed the
AT HIGH L~NE VOLTAGE:;\. .CR
AND LOW BEA'' Cl*tR~.... - breakdown voltage of the trace-switch components.
- - --- - --
AT LOW LINE VOlTAGE

AND HIGH BEAM CURRENT
Two means are provided in the SCR horizontal-
deflection system to correct for nonlinearities in the
horizontal scanning current that may result because of
Fig. 15 - High-voltage regulator and operating voltage voltage drops across the inherent resistance in the trace
and current waveforms. circuit. Voltage drops across the resistance of the trace-
switch SCR and diode are held to a minimum by
operation of the trace diode at a more negative voltage
than the trace SCR. This condition is achieved by con-
Two circuits are included in the SCR deflection
nection of the trace diode one turn higher (more
system to protect the trace-switch SCR and diode from
negative) on the high-voltage transformer than the
high voltages and currents that may result because of
SCR.
arcing from the high-voltage rectifier or the picture
Fig. 17 illustrates another technique used to correct
tube. These circuits are shown in Fig. 16.
for nonlinearity in the scanning current. This technique
One circuit includes the parallel combination of a
diode (Do) and a 4.7-ohm resistor (Ro) connected in
series with the primary of the high-voltage transformer.
TRANS. H.V.
H'V~
II
uses a damped series resonant circuit (LLIN' CLIN, and 2. The only input drive signal required for the SCR
RLI,,) , connected between a winding on the high- deflection system is a low-power pulse which has
voltage transformer and the ungrounded side of the no stringent accuracy specification in relation to
yoke-return capacitor C" to produce a damped sine either amplitude or time duration. The deflection
wave of current that effectively adds to and subtracts system, therefore, can be driven directly from a
from the charge on the yoke-return capacitor Cy The pulse developed by the horizontal oscillator.
resulting alteration in yoke current corrects for any
trace-current nonlinearities. 3. This deflection system is unique in that, although
it operates from a conventional B + supply of
+ 155 volts, the flyback pulse is less than 500
ADVANTAGES OF THE SCR HORIZONTAL- volts. This level of voltage stress is substantially
DEFLECTION SYSTEM less than that in conventional line-operated sys-
It is apparent from the preceding discussions that tems, and this factor contributes to improved
the SCR horizontal-deflection system offers a number of reliability of the switching devices.
distinct advantages over the conventional types of sys-
4. Regulation in the SCR deflection systelil is ac-
tems currently used in commercial television receivers.
complished by control of the energy stored by a
The following list outlines some of the more significant
reactive element. This technique avoids the use
circuit features of the SCR deflection system and points
of resistive-load regulating elements required by
out the advantage derived from each of them:
many other types of systems and, therefore,
I. Critical voltage and current waveforms, and tim- makes possible higher over-all system efficiency
ing cycles are determined by passive components and reduces input-power requirements.
in response to the action of two SCR-diode
switches. The stability of the system, therefore, is 5. All switching occurs at the zero current level
determined primarily by the passive components. through the reverse recovery of high-voltage p-n
When the passive components are properly ad- junctions in the deflection diodes. The diode junc-
justed, the system exhibits highly predictable per- tions are not limited in volt-ampere switching
formance characteristics and exceptional opera- capabilities for either normal or abnormal condi-
tional dependability. tions in the circuit.
oornLJD
Solid State
Thyristors
Division
Application Note
AN-3822
Thermal Considerations in Mounting of

RCA Thyristors
Consideration of thermal problems involved in the

mounting of thyristors is synonymous with consideration
of the best heat sink for a particular application. Most
practical heat sinks used in modern, compact equipment
are the result of experiments with heat transfer through ~
convection, radiation, and conduction in a given appli- I
cation. Although there are no set design formulas that
provide exact heat-sink specifications for a given ap-
I
plication, there are a number of simple rules that reduce
3-L E AD 2-L EAD
the time required to evolve the best design for the job.
MODIFIED MODIFIED
These simple rules are as follows:
1. The surface area of the heat sink should be as

large as possible to provide the greatest possible
heat transfer. The area of the surface is dictated
by thyristor case-temperature requirements and the
environment in which the thyristor is to be placed. produced prepunched parts, direct soldering, and batch-
soldering techniques eliminates many of the difficulties
2. The heat-sink surface should have an emissivity
associated with heat sinks by making possible the
value near unity for optimum heat transfer by radi-
use of a variety of simple, efficient, readily fabricated
ation. A value approaching unity can be obtained
heat-sink configurations that can be easily incorporated
if the heat-sink surface is painted flat black.
into the mechanical design of equipment.
3. The thermal conductivity of the heat-sink material
should be such that excessive thermal gradients Power Dissipotion ond Heot-Sink Areo
'are not established across the heat sink.
The curves shown in Fig.3 are designed for use with
Although these rules are followed in conventional the power-dissipation curves shown in the technical bul-
heat-sink systems, the size and cost of such systems letins describing the various RCA thyristors. The curves
often become restrictive in compact, mass-produced of Fig.3 are conservative and can be used directly for
power-control and power-switching applications using thyristors having thermal-resistance ratings (Br), junc-
thyristors. These restrictions are overcome in RCA thy- tion-to-case, of 50 C/W or less. The curves shown in
ristors because the JEDEC TO-5 and "modified TO-5" Fig.4 represent the power-dissipation characteristics of
packages shown in Figs.l and 2 are tin-plated and can a typical thyristor. As an example of the use ofFigs.3and
be soldered directly to a heat sink. The use of mass- 4, it is assumed that an appropriate heat sink must be
366
3~'" O,A -l
335
315 OIA
I
035 .
OIS
_ 1.- .~ns
6~" OIA
...- CASE TEMPERATURE
QE'ER[NC[ lONE
/"" GAT(
4S 0
,.,
42
'" OuTSIDE
CORNER
RADII
0~5 '~ :*' 045
007 MAX.
028 029
034
02. ).
L
.100
r~~~
[
MINo]
.315
.335 ~~:ll
01'
MAX.
01' _
l
L .045
.029
MAX.
MIN
MIN. .260 MAX.

240"".
L .. ISEATING PLANE
.009 TO
~ .125 1.5
OETL~~i:SI~~~T- 0 ~N.
ZONE OPTIONAL
2 LEADS
-_.019 MAX
.016 MIN.
01'
Fig.2 - Details of thyristor packages showing dimensions

and reference point for case-temperature measurement.
found for a thyristor that is to conduct a current of 2 The curves of Fig.3 can also be used with thyristors
amperes. operate at an air temperature of 370C, and be having junction-te-case thermal-resistance ratings of
soldered to the heat sink at the base of the package. more than SO C/IV. However, the difference between the
From Fig.4, the maximum power dissipation in the thy- higher thermal-resistance value of the thyristor and the
ristor is found to be 3 watts. Fig.3 shows that the max- value of SO C/IV upon which the curves are based must
imum allowable thermal resistance of the heat sink at be subtracted from the thermal-resistance values shown
this level of power dissipation is 150 C/IV, and that a in Fig.3. For example, if it is assumed that the condi-
square, dull, 1/ 16-inch-thick copper or 1/8-inch-thick tions are the same as those stated previously except
aluminum heat sink with an area of at least 1-3/4 by 1- that the thermal resistance, junction-to-case, of the de-
1/ 4 inches is required. vice is 130 C/W, the difference in thermal-resistance
values is 80 C/W. The closest value of thermal resis-
tance to 80 C/W in Fig.3 is 70 C/W; therefore, a 3-3/8-
by-3-3/8-inch heat sink is required.
Commercial heat sinks are available for the thyris-
tor packages described; however, because the thyristor
~ '0
package is usually attached to the heat sink at the cap.
the additional thermal resistance from the base of the
I package to the cap must be considered. Although this

~ resistance can be as high as gO C/W, it can be neglected
z if it is only a small percentage of the over-all allowable
~
Q
thermal resistance. It should be noted that most thyris-
1t
tor thermal-resistance ratings are based on temperature
~
is measurements taken at the base of the package. The
or
'g case-temperature reference point specified on the dimen-
2 sional outlines shown in Fig.2 should be used when
D
temperature measurements are made. A low-mass temp-
~:: erature probe or thermocouple equipped with wire leads
"s: no larger than AWG No. 26 should be :employed for sys-
"'c
C' tems with thermal-resistance values less than 500 C/W.
a
w For systems with thermal-resistance values greater than
~ 500C/W, smaller wire (such as AWG No. 36) is preferred.
Mounting Thyristors on Heat Sinks
For most efficient heat sinks, intimate contact should

exist between the heat sink and at least one-half of the
package base. The package can be mounted on the heat
AMBIENT AIR TEMPERATURE (TFAI-
sink mechanically, with glue or epoxy adhesive, or by
I 1 I I
58 104 140 176 soldering. If mechanical mounting is employed, silicone
AMBIENT AIR TEMPERATURE (TFA)- of
grease should be used between the device and the heat
sink to eliminate surface voids, prevent insulation build-
up due to oxidation, and help conduct heat across the
CURRENT WAVEFORM: SINUSOIDAL interface. Although glue or epoxy adhesive provides
good bonding, a significant amount of resistance may
exist at the interface. To minimize this interface resis-
tance, an adhesive material with low thermal resistance,
such as Hysol* Epoxy Patch Material No. 6C or Wake-
field* Delta Bond No. 152, or their equivalent, should
be used.
Soldering of the thyristor to the heat sink is prefer-

able because it is most efficient. Not only is the bond
permanent, but interface resistance is easily kept below
10 C/W under normal soldering conditions. Oven or hot-
plate batch-soldering techniques are recommended be-
cause of their low cost. The use of a self-jigging ar-
rangement of the thyristor and the heat sink and a 60-40
solder preform is recommended. If each unit is soldered
individually with a flame or electric soldering iron, the
heat source should be held on the heat sink and the
solder on the unit. Heat should be applied only long
enough to permit solder to flow freely. Because RCA
thyristors are tin-plated. maximum solder wetting is
easily obtainable without thyristor overheating.
4 6 8 10 12
AVERAGE FORWARD CURRENT (IFAV)-
AMPERES * Products of Hysol Corporation, Olean, New York and
Wakefield Enginli'ering, Inc., Wakefield, Massachusetts,
respectively.
The special high-conductivity leads on the two-lead use the chassis or equipment housing as the heat sink.
TO-5 package permit operation of the thyristor at cur- In such cases, the thyristor must be electrically insulat-
rent levels that would ':>e considered excessive for an ed from the heat sink, but must still permit heat generat-
ordinary TO-5 package. The special leads can be bent ed by the device to be efficiently transferred to the chas-
into almost any configuration to fit any mounting require- sis or housing. This heat transfer can be achieved by
ment; however, they are not intended to take repeated use of the heat-spreader mounting method. In this method,
bending and unbending. In particular, repeated bending the thyristor is attached to a metal bracket (heat spread-
at the glass should be avoided. The leads are not espe- er) which is attached to, but electrically insulated from,
cially brittle at this point, but the glass has a sharp the chassis. Examples of heat spreaders are shown in
edge which produces an excessively small radius of Figs.6 and 7. Electrical insulation may consist of ma
curvature in a bend made at the glass. Repeated bend- terial such as alumina ceramic, polyimide film or tape,
ing with a small radius of curvature at a fixed point will fiberglass tape, or epoxy. The metal bracket itself has
cause fatigue and breakage in almost any material. For a low thermal resistance, and spreads the heat out over
this reason, right-angle bends should be made at least a larger area than could the thyristor case alone. The
0.U20 inch from the glass. This practice will avoid larger area in contact with the electrical insulation al-
sharp bends and maintain sufficient electrical isolation lows heat to transfer from bracket to chassis through the
between lead connections and header. A safe bend can insulation with relatively low thermal resistance. Typ-
bp assured if the lead is gripped with pliers close to ical heat sinks, such as those shown in Fig.6, provide a
the glass seal and then bent the requisite amount with much lower thermal resistance when used as heat spread-
the fingers, as shown in Fig.5. When the leads of a num- ers than when used as heat sinks. Heat spreader dimen-
ber of devices are to be bent into a particular configura- sions can be varied over a wide range to suit particular
tion, it may be advantageous to use a lead-bending fix- applications. For example, area or diameter can be in-
ture to assure that all leads are bent to the same shape creased, or shape changed, as long as the heat-transfer
and in the correct place the first time, so that there is area in contact with the electrical insulation is suffi-
no need for repeated bending. cient. An area of 0.2 square inch or more is usually de-
sirable. The exact thermal resistance of any heat
spreader depends on the heat-transfer area, type of metal
used, type of insulation used, and whether the thyristor
is fastened to the heat spreader with solder or epoxy.
Soldered construction yields a thermal resistance about
10 e/w less than t!lat obtained with epoxy. Alumina
or polyimide insulation provides a thermal resistance
about 1 to 20 e/w less than that obtained with thermo-
setting fiberglass-tape insulation. The heat spreader
can be made of any material with suitable thermal con-
ductivity, such as copper, brass, or aluminum. Solder-
able plating for aluminum is commercially available.
A self-jigging type of copper heat spreader is shown

in Fig.7. SCR's soldered to this heat spreader are available
from RCA as type numbers S2620B, S2620D, and S2620M.
Typical Heat.Sink Configurations
Typical heat-sink designs that can be used with ReA

thyristors are shown in Fig.6. The case-to-air thermal-
resistance value for each of the easily fabricated sinks
is given, "long with approximate dimensions. The thy-
ristors in the illustrations are soldered to the heat sink;
if epoxy is used, an additional thermal resistance of
10e/W to 20e/W must be added to the thermal-resistance
values shown. The junction-to-case thermal-resistance
value for the particular thyristor being used should be
Bibliography
added to the values shown to obtain the over-all junc-
J. Neilson and N. Smith, "Thermal Impedance of Silicon
tion-to-air thermal resistance of each configuration. In
the designs shown, electrical insulation of the heat sink Rectifiers," RCA Publication No. ST-2055A.
from the chassis or equipment housing may be required. Frank D. Gross, "Semiconductor Heat-Sink Design
Chart," Electronics World, January, 1965.
A. D. Marquis, "How 'Hot' Are You On Thermal Rat-

ings?," Electronic Design, November 8, 1967.
~
~
~II
~
II
II"
11
1\
II
II
1116'
~./'~
~-:J
1-112"
~
e,
,,.'". -fJ~I
(CASE-TO-A1R' \
1-'/2'~
~~ 1_1/2"~1-'/2"
~:J
e, (CASE-TO-AIR)30C/W r==
~
A~"'--"'~~
L_.,i~"~:--~~
11
1/4" ::::::-..::::::-..:::::::::- I
~ l02"~ -::::::::..,. ~
5/8" --1--1/2~
~f-1/2,,-r
8, (CASE - TO- AIR) 39.5~
~
b"> ~~l.-J-
C:~~..---::;;:; 3/4"J
5/8"~
8, (CASE-TO-AIR)
4~
~~
NOTES:
1. Products of Minnesota MInmg & Mfg. Co., St. Paul, Minnesota.
2. Solder preforma are available from RCA aa Part No.NRI84A and from the Keater Solder Co., Newark, t'I.J. 07105
aa Part No.KSFD-375005.
3. This heat spreader is available from ReA as Part No.NR 1668 and from the General Stamping Co., Inc.
Denvil.le, N.J. 07834 as Part No.14-110.
OO(]3LJi] Thyristors
Division
AN-3886
AC Voltage Regulators
Using Thyristors
This Note describes a basic ac-voltage regulating the breakover voltage VBO, approximately 35 volts.
technique using thyristors that prevents ac rms or de Above this voltage, the device exhibits a negative re-
voltage from fluctuating more than 3 per cent in spite s istance so that voltage decreases as current increases.
of wide variations in input line voltage. Load voltage Capacitor C1 in Fig.l is charged from a constant-
can also be held within 3 per cent of a desired value voltage source established by zener diode Zl' The
des pite variations in load impedance through the use of capacitor is charged, therefore, at an exponential rate
a voltage-feedback technique. The voltage regulator regardless of line-voltage fluctuations. A trigger pulse
described can be used in photocopying machines, light is delivered to the 2N3228 SCR, Q2, when the voltage
dimmers, de power supplies, and motor controllers (to across capacitor Cl is equal to the trigger voltage of
maintain fixed speed under fixed load conditions). diac Ql plus the instantaneous voltage drop developed
across R4 during the positive half-eycle of line voltage.
Circuit Opera:ion
When Ql is turned on, Q2 is turned on for the remainder
The schematic diagram of the ac regulator is shown of the positive cycle of source voltage. Control of the
in Fig.l. For simplicity, only a half-wave SCR con- conduction angle of the SCR regulates rms voltage to
figuration is shown; however, the explanation of circuit the load.
operation is easily extended to include a full-wave regu-
Regulation is achieved by the following means:
lator that uses a triac.
When line voltage increases, the voltage across ~
The trigger device Ql used in Fig.l, a diac such increases, but the charging rate of Cl remains the saTile;
as the RCA-D3202U, is an all-diffused three-layer trigger as a res ult, the voltage across Cl must attain a larger
diode. This diac exhibits a high-impedance, low-Ieakage- value than required without line-voltage increase before
current characteristic until the applied voltage reaches diac Ql can be triggered. The net effect is that the
pulse that triggers Q2 is delayed and the rms voltage
to the load is reduced. In a similar manner, as line
t
ELINE.
voltage is reduced, Q2 turns on earlier in the cycle and
increases the effective voltage across the load.
Fig.2 shows the voltage waveforms exhibited by the

ac regulator at both high and low line voltage. The
charging voltage for capacitor Cl, El' is equal to the
zener voltage and remains constant up to the instant
that the SCR is turned on. The capacitor voltage, VCl.
increases exponentially because the charging voltage
El is constant. The voltage across resistor R4 conforms
HEATER REGULATION
Fig.3 shows a basic regulating technique for appli-

cations in which it is desired to maintain constant volt-
age across a load such as a receiving-tube heater, the
filament of an incandescent lamp, or possibly a space
heater. It should be noted that this configuration is
actually a half-wave regulator. However, the circuit of
Fig.3 differs from the circuit of Fig.l, in which one
half-eycle is blocked from the load and the other half-
cycle is phase-controlled to provide regulation. In
o I 2 3 4 567 e I Fig.3, essentially full voltage is applied to the load
I for one half-cycle by means of D4; the other half-eycle
L
IME-MILLISECONDS
I.-- CONDUCTION TIME ----I is phase-eontrolled by the SCR to provide regulation.

I (LOW LINE VOLTAGE) I
I I The circuit in Fig.3 is an open-loop regulator that
i (~~:~~:O~i~~Eiifeatures a high degree of safety; i.e., an open- or short-
ONE HALF-CYCLE I circuited component does not result in an excessive
OF AC LINE I
Fig.2 - Yoltage waveforms exhibited by the ac regulator
in Fig. 7.
to the sinusoidal variations of the 6o-Hz line voltage.

At any given phase angle, the voltage across R4 increases
if line voltage increases and decreases if line voltage
decreases. "- 12av
60Hz
The diac and SCR both trigger when the capacitor

voltage, VC1' equals the breakdown voltage of the diac
plu~ the instantaneous value of voltage developed across
~ during the positive half-eycle of line voltage. This
C,
capacitor voltage is represented by points A and B for o 47p.F"
200 V
the low and high line-voltage conditions, respectively.
The instantaneous voltages across ~ just before the IN THE CLOSErLOQP REGULATOR R6 IS REPLACED BY A
SCR is triggered are represen.ed by points C and D for PHOTOCELL ReA 502520 AND A POTENTIOMETER
IN SERIES WITH A G'VOLT INCANDESCENT LAMP IS
the low and high line-voltage conditions, respectively. CONNECTED IN PARALLEL WITH THE HEATER TERMINALS
NOTE: ALL RESISTOR VALUES ARE IN OHMS
The voltage difference between points A and C and
between points Band D is equal to the breakdown volt-
Fig.3 - A circuit using a regulator to maintain voltage
age of the diac.
constant across a load:
Fig.2 illustrates that the conduction time of the
SCR is decreased as line voltage increases, and is load voltage. Phase-eontrolled voltage regulation is
increased when the line voltage decreases. By proper provided by a silicon unilateral switch Ql * and a control
selection of the values of the voltage-divider-ratio re- circuit, as follows: Capacitor C2 is charged from a volt-
sistors R3 and R4, it is possible to prevent the load age source that is maintained constant by zene:' diode
',oltage from varying more than 3 per cent with a 3O-per- Zl; diodes Dl' D2' and D3 compensate for the change
cent (approximate) change in line voltage. in zener voitage with temperature. The voltage across
It should be mentioned that during measurements C2 increases until the sum of the breakover vo1tage of
of load voltage careful consideration must be given to Ql and the instantaneous voltage across R5 is exceeded.
the measuring instruments. Most of the circuits described At this point, a positive pulse is coupled into the gate
in this Note produce a non-sinusoidal voltage across the of Q2 by means of the pulse transformer Tl' The SCR
load; the rms value of this voltage can be measured Q2 then switches on for the remainder of the positive
only with a true rms meter, slh as a thermocouple cycle of line voltage. Control of the conduction angle
of the SCR varies rms voltage to the heater.
meter. It is possible, however, that in certain appli-
cations the low input impedance of the thermocouple
meter might load down the circuit being measured. In * A silicon unilateral switch is a silicon, planar. monolithic
such cases, a high-input-impedance rms meter may be integrated circuit that has thyristor electrical characteristics
closely approximating those of an ideal four-layer diode. The
required. device shown switches at approximately 8 volts.
As line voltage increases, the voltage across R5 CURVE A:OPEN-LOOP REGULATION
also increases; because C2 charges along the same CURVE e: CLOSED-LOOP REGULATION
READINGS TAKEN AT 25"C
exponential curve, however, the voltage across C2 must 6]B
%T<-
attain a larger value before Q2 is turned on. The net +3/..
effect is a delay in the trigger pulse and reduced rms 6

voltage across the heater. In a similar manner, as line t-3 ~~
voltage is reduced, the SCR turns on earlier in the cycle
~ I'
and increases the effective voltage across the heater. 20"4
( . 10 % OF APPROXIMATELY 120
By proper adjustment of potentiometer Flu in conjunction II)
with potentiometer R4, it is possible to obtain excellent 5.6
heater-voltage compensation over a range of line volt-

ages. Fig.4 shows the waveforms associated with the
Fig.5 - Heater voltage as a function of line voltage of
heater-regulator circuit.
the open- and closed-loop regulators.
circuit as an ac voltage regulator with closed-loop

feedback control. The closed-loop regulator produces
less error, is more resistant to the drift effects of com-
ponents, and is easier to adj ust than the open-loop
regulator.
The lamp used in the closed-loop regulator is rated
at 6 volts, but the series resistor limits the voltage to
approximately 2 volts so that extremely long lamp life
can be expected. An additional advantage at low voltage
is that the light intensity varies linearly with the voltage
across the lamp so that a small increase in voltage
increases brightness markedly; near rated voltage the
intensity does not vary linearly and the variation in
brightness is not very apparent. A loss in sensitivity
would result if the lamp were operated at its rated
voltage.
The open-loop regulator can regulate 6 volts to
within 3 per cent within a temperature range from
10 to 400C with an input-voltage swing of 10 per cent.
The closed-loop regulator can regulate 6 volts to within
2 per cent within a temperature range from 0 to 600C
with an input-voltage swing of 10 per cent.
Fig.4 - Voltage waveforms exhibited by the circuit of Light-dimmer circuits are becomingly increasingly
Fig.3. popular for home use. Fig.6 shows a typical light-
dimmer configuration. This circuit provides the ad-
Curve A in Fig.5 shows heater voltage as a function
vantages of low hysteresis and continuous control up to
of line voltage for the open-loop regulator circuit shown
the maximum conduction angle. At low illumination
in Fig.3. Curve B in Fig.5 shows a similar curve for a
closed-loop regulator using a lamp-photocell module.
The lamp, in series with a limiting resistor, is connected
across the heater terminals, and the photocell replaces
R6. The lamp unit senses the phase-controlled true
rms heater voltage. Changes in lamp brightness pro-
duced by heater-voltage variations change the photocell
resistance in reverse proportion to the lamp voltage. The
remainder of the circuit functions as previously described
except that regulation is obtained not only through the
monitoring of the instantaneous magnitude of line voltage,
but also through the sensing of the true rms voltage
across the heater. This characteristic identifies the
levels, however, the variable resistor Rp is adjusted to is subjected to voltages of 120 volts plus 3 per cent and
a high resistance setting. If a momentary drop in line minus 10 per cent. The - lQ-per-eent line dip has little
voltage occurs at this condition, the high breakover effect on lamp-life reduction.
voltage of the diac in conjunction with the high re-
The circuit also regulates lamp voltage for various
sistance coold result in a circuit misfire; i.e., the light
settings of potentiometer Rp. Fig.8 shows line voltage
could be extinguished and remain so until the circuit
as a function of lamp voltage for two settings of Rp for
is reset by readjustment of the control to a high illumi-
the circuits of Figs.6 and 7. These curves illustrate the
nation setting.
increased regulation achieved by the improved circuit.
A natural successor to the circuit of Fig.6 might
consist of a configuration which not only provides the
light-dimming function but also extends the life of the
lamp being controlled. One of the major causes of re-
FULL BRIGHTNESS
duced lamp life can be directly attributed to line-voltage I
fluctuations and in particular to periods of over-voltage. f /?'
ominal line voltage is approximately 120 volts 10 3"
.....
,./>
.-
..- I
I
per cent; it is the + 10-per-eent variation that causes _'-- ----.
- 30Y.--_
lamps to reach end-of-life prematurely.

I 90
A technique for limiting or clamping the lamp volt- w
age, without sacrificing any of the desirable features of "
c
~ 60
the dimmer of Fig.6, is shown in Fig.7; LF and CF
~ I
suppress rf interference. Fig.7 employs the basic regu- ~
~ <0t- I
lating circuit described earlier; however, in the con- I
I
figuration shown, the switching voltage of Ql, a silicon " ,
':L
IOIAC FAILED I
bilateral switch,* is reduced by steering diodes 01 and :TO TRIGGER:
02 in conjunction with resistor R. This arrangement not I

I
IK 02
Il2w ReA
01 r - *, T28008 M12 Fig.8 - Lamp voltoge as a function of line voltage for
CF
OI ...
F SILICON BILATERAL I !50K two values of Rp in the circuits of Figs.6 and 7.
200V SWITCH L __ ~POT
The dimmer configuration of Fig.7 can also be used

ZI r- as a 12Q-volt full-wave heater regulator. In this appli-
120V 12v :
cation the light is replaced by a heater load. If the load
60Hz 400mWI can be operated at a nominal 100 volts with an input
22 : ,r- --, voltage of 120 volts. more symmetrical regulation can be
12\1 I L -J
realized; i.e., 3 per cent regulation can be achieved
400mWI 01 02
L_ TYPE TYPE with a line variation of 10 per cent. In the full-wave
IN3193 IN3193
heater-regulator application, diodes 01' 02' and resistor
*OASHED LINES INDICATE MAJOR R in Fig.7 can be eliminated because a wide conduction
ADDITIONAL COMPONENTS REQUIRED
TO ACHIEVE VOLTAGE CLAMP angle is not required.
NOTE ALL RESISTOR VALUES ARE IN OHMS
Such a control might also be used in colorimetry, an
application in which it is necessary to match the color
(and temperature) of a lamp with a standard; in this ap-
plication line-voltage fluctuations can create a measure-
only makes it possible to achieve larger conduction ment error. Other areas of application, such as photo-
ang les, but also prevents the circuit from misfiring at graphy, heater control, and hot-plate and solder-pot con-
low illumination levels when it is subjected to dips in trol, can also make effective use of the dimmer circuit
line voltage. The light-dimmer circuit in Fig.7 is capa- with over-voltage clamp.
ble of clamping the high-line-voltage condition to within
+3 per cent of its nominal value; as a result, the lamp VOL TAGEREGULATED DC SUPPLY
A simple but stable dc power supply us ing thyris-
* A silicon bilateral s\\'itch is a silicon, planar, monolithic tors is shown in Fig.9. The power-supply section con-
integrated circuit that switches at approximately 8 volts in
both diI''ctions. sists of the well known full-wave bridge with RC filter.
z,
,zV c.
4QQmW o 22 ~F
200v
C, 05 06
0.1 ~F TYPE TYPE
20Cv IN3193 IN3193
-Cz
022,.,.F
200 V
A line-voltage tl'ansformer is employed to step-down the If increased line, temperature, and load conpensa-
supply voltage of 120 volts rms to approximately 12.5 tion is desired in the regulated dc supply of Fig.9, a
volts rms. If a dc output voltage greater than 10 volts closed-loop type of control can be obtained by use of a
is desired, a transformer with a lower primary-to-second- photocell in place of RF and connection of a lamp across
ary turns ratio should be employed. the output terminals of the supply in such a way that the
The heart of the regulator shown in Fig.9 is the light from the lamp can impinge on the photocell surface.
phase-controlled triac on the primary side of the line
transformer. Because the load presented to the triac is
somewhat inductive, an RC network is liSed to assure
(X"opercommutation; LF and CF sup(X"ess rf interference.
The circuit automatically compensates for wide varia-
tions in line voltage. Fig.10 shows a curve of line volt-
age as a function of load voltage, Edc' for a constant
load of 10 ohms. Fig.ll shows the voltage waveforms
associated with the circuit of Fig.9.
o
c
o
..J ~.6
70
Fig.IO - Load voltage as a function of line voltage for the Fig.11 Voltage waveforms exhibited by the circuit of
circuit of Fig.9; load resistance is constant at 10 ohms. Fig.9.
Other thyristors than those shown in this Note can on the voltage and current requirements of the applica-
also be used for voltage regulation. The selection of an tion. The quick-selection charts shown below indicate
SCR or triac for a particular regulating circuit depends the capabilities of RCA thyristors for this type of usage.
Triac QuickSelection Chart SCR Quick-Selection Chart
r:: O.35A 6A lOA 15A 30A 40A 2A 5A 12.5A 15A 25A 35A
0
~ ''';:a
_ T2300B T2700B 2N5567 2N5571 T6401B 2N5441 2N3528 2N3228 2N3669 2N1846A 1N685 2N3871
o ~
> ~ T2302B T2710B 2N5569 2N5573 T6411B 2N5444 52710B 2N3897
60 T2310B T4700B 53700B
N
~ ..J" T2312B
r:: T23000 T27000 2N5568 2N5572 T64010 2N5442 2N3529 2N3525 2N3670 2N1849A 2N688 2N3872
0
- 0';: T23020 T27100 2N5570 2N5574 T6411D 2N5445 527100 2N3898
_ 0
o ~
T23100 T47000 537000
> ~
60 ..
... T23120
N r::
..J
ffil(]5LJD
Solid State
Division Application Note
AN-4124
Handling and Mounting of

ReA Molded Plastic
Transistors and Thyristors
RCA power transistors and thyristors (SCR's and triacs) in of thyristors supplied in TO-220AA packages, however,
molded -silicone-plastic packages are available in a wide range differs from that of thyristors supplied in conventional
of power-dissipation ratings and a variety of package con- T0-66 packages so that some hardware changes are required
figurations. This Note provides detailed guidelines for to effect a replacement. The TO-220AA Versawatt package is
handling and .mounting of these plastic-package devices, and also supplied with an integral heat sink. Fig. 4 shows the
shows different types of packages and suggested mounting dimensional outline for this heat sink. The use of the integral
hardware to accommodate various mounting arrangements. heat sink reduces the junction-to-air thermal resistance of the
Recommendations are made for handling of the packages package from 700C per watt to 350C per watt.
during the forming of le"ds to meet specific mounting
requirements. Various mounting arrangements, thermal con- The RCA molded-plastic high-power packages are also
siderations, and cleaning methods are described. This infor- supplied in several configurations for flexibility of applica-
mation is intended to augment the data on electrical tion. The JEDEC Type TO-219AB, shown in Fig. 5, is the
characteristics, safe operating area, and performance basic high-power plastic package. Fig. 6 shows a JEDEC Type
capabilities in the technical bulletin for each type of TO-219AA version of the high-power plastic package.
plastic-package transistor or thyristor. (Data on mechanical
and environmental capabilities of RCA plastic-package
transistors are also available in a periodically updated L~ H:] '/""0' Ix -L
Reliability Report, RCA Publication No. HBT-600.)
IEAT,HGPLAHE A .L~ "
, , ,+
TYPES OF PACKAGES
F I
Two basic types of molded-plastic packages are used for RCA
solid-state power devices. These types include the RCA
Versawatt packages for medium-power applications and the
~P
Ll,
RCA high-power plastic packages, both of which are ~*
specifically designed for ease of use in many applications. =r-i j
Each basic type offers several different package options, and I~I~
I. <ISo ~ b2
the user can select the configuration best suited to his !) POSITION OF LEADS TO BE
particular application. I MEASURED AT THIS PLANE
Figs. I through 3 show the options currently available for

devices in RCA Versa watt packages. The JEDEC Type SYMBOL
INCHES
SYMBOL
INCHES
TO-220AB in-line-lead version, shown in Fig. I, represents MIN. MAX. MIN. MAX.
,
the basic style. This configuration features leads that can be
formed to meet a variety of specific mounting requirements.
,
A .140
.020
.190
.038
.190
.090
.210
.110
'I .012 .045 "F .045 .055
Fig. 2 shows a package configuration that allows a Versawatt '2 .045 .070
H .230 .270
package to be mounted on a printed-circuit board with a 0 .560 .625 L .SlID .562
d .080 .115
O.lOO-inch grid and a minimum lead spacing of 0.200 inch. LI .250
E .330 .420 ~p .139 .147
Fig. 3 shows a JEDEC Type TO-220AA version of the
E, .365 .385 0 .040 .060
Versawatt package. The dimensions of this type of transistor E2 .300 .320 Z .100 .120
package are such that it can replace the JEDEC T0-66
transistor package in a commercial socket or printed-circuit Fig. 1 - Dimensional outline of the JEDEC TO-220AB
board without retooling. The pin-connection arrangement in-line-lead Versawatt transistor package.
~,~
~.
SECTION A-A
/
:9g:-
" Y t::;;- 0962
0958
~8 44B
452
0378
0387
MEASURED ~ 27
fAT BOTTOM
g~~ 01;8
0502
INCHES INCHES
SYMBOL SYMBOL
A
B
MIN.
.140
MAX
.190
.850
,
MIN.
.190
.090
MAX
.210
.110
f-gmj
'1
b .045 .070 '2 .203 .243 ~O.75 g.~~~
ALL DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SHOWN. TOlERANCE.S ARE:
bl .015 .030 '3 .190 .200
!002 fOR 2ND PLACE; !O.005 fOR 3RO PLACE AND ~112 fOR ANGULAR
b2 .020 .038 F .045 .070 DIMENSION .
L . 30 .270 H .230 .270

, .180 .220 K .080 .085 Fig. 4 - Integral heat sink used with the TO-220AA
'1 .130 .170 l, .070 .090 Versawatt package shown in Fig. 3.
0 .560 .625 +p .139 .147
E .330 .410 0 .040 .060
E, .365 .385 S .655 .685
E2 300 .320 Z 100 .120
Fig. 2 . Dimensional outline of Versawatt transistor package

designed for mounting on printed-circuit boards.
I'-=:]
~
SECTIONX~
INCHES
SYMBOL
MIN. MAX.
A . 160 .200
INCHES INCHES B .045 .060
SYMBOL SYMBOL
MIN. MAX. MIN. MAX. C .025 .045
A . 140 .190 F .045 .055 0 .890. .910
b .020 .038 H .230 .270 01 .480 .515
b .012 .045 l .360 .422 d .100 .120
b2 .045 .070 l .050 E .480 .520
0 .560 .625 <t>p .139 .147 F .055 .070
d .080 .115 0 .610 II .415 .560
E .330 .420 0, .040 .060 p .128 .150
LI BASE .740 .760
E, .365 .385 S .580 .610
.
9
E2 .300
.190
.320
.210
Z .100 .lZ0
1_ S .500 .sZO
Fig. 3 . JEDEC TO220AA Versawatt transistor package

designed for direct replacement of the JEDEC T0-66 Fig. 5 - JEDEC TO-219AB high-power molded-plastic tran-
package. sistor package.
T
SEATING
PLANE
~Ll
+ - P E
_:=1 ALL DIMENSIONS IN INCHES
Fig. 7 . TO219AA plastic transistor package designed for

mounting on printed-eircuit boards.
5YMBOL INCHE5
--- -INCHES-
SYMBOL use of a properly designed fixture for this operation
MIN. MAX. MIN. MAX
A .160 .200
--;- .460 .505 eliminates the need for repeated lead bending. When the use
B .045 .060 F .055 .070
of a special bending fixture is not practical, a pair of
C .025 .045 L .370 .450
0 .890 .910 p .128 .150 longnosed pliers may be used. The pliers should hold the
lead firmly between the bending point and the case, but
01
E
.480
.480
.515
.520

5
.740
.500
.760
.520 should not touch the case. Fig. 8 illustrates the use of
Fig. 6 - JEDEC TO219AA plastic package designed for use long-nosed pliers for lead bending. Fig. 8(a) shows techniques
as a direct replacement for the hermetically sealed JEDEC that should be avoided; Fig. 8(b) shows the correct method.
TO3 transistor package.
The RCA highpower plastic package is also available with an

attached headercase lead, as shown in Fig. 7. This three-lead
package is designed for mounting on a printedcircuit board.
'9
LEAD IS NOT RESTRAINED BETWEEN
BENDING POINT AND PLASTIC CASE.
Fig. 8 - Use of long-nosed pliers for lead bending: (a)

incorrect method; (b) correct method.
LEADFORMING TECHililQUES
RCA Versawatt plastic packages are both rugged and versatile
When the leads of an in-line plastic package are to be formed,
within the confines of commonly accepted standards for
whether by use of longnosed pliers or a special bending
such devices. Although these versatile packages lend them-
fixture, the following precautions must be observed to avoid
selves to numerous arrangements, provision of a wide variety
internal damage to the device:
of lead configurations to conform to the specific require
men"ts of many different mounting arrangements is highly I. Restrain the lead between the bending point and
impractical. However, the leads of the Versawatt in-line the plastic case to prevent relative movement
package can be formed to a custom shape, provided that they between the lead and the case.
are not indiscriminately twisted or bent. Although these 2. When the bend is made in the plane of the lead
leads can be formed, they are not flexible in the general (spreading), bend only the narrow part of the lead.
sense, nor are they sufficiently rigid for unrestrained wire 3. When the bend is made in the plane perpendicular
wrapping. to that of the leads, make the bend at least 1/8
Before an attempt is made to form the leads of an in-line inch from the plastic case.
package to meet the requirements of a specific application, 4. Do not use a lead-bend radius of less than 1/16
the desired lead configuration should be determined, and a inch.
lead-bending fixture should be designed and constructed. The 5. Avoid repeated bending of leads.
The leads of the TO-220AB Versawatt in-line package are not distance greater than 1/8 inch from the plastic case. When
designed to withstand. excessive axial pull. Force in this wires are used for connections, care should be exercised to
direction greater than 4 pounds may result in permanent assure that movement of the wire does not cause movement
damage to the device. If the mounting arrangement tends to of the lead at the lead-to-plastic junctions.
impose axial stress on the leads, some method of strain relief
should be devised. Fig. 2 illustrates an acceptable lead-
forming method that proVides this relief. The leads of the RCA molded-plastic high-power packages
are not designed to be reshaped. Simple bending of the leads,
Wire wrapping of the leads is permissible, provided that the however, is permitted to change them from a standard
lead is restrained between the plastic case and the point of vertical to a standard horizontal configuration, or conversely.
the wrapping. Soldering to the leads is also allowed; the Bending of the leads in this manner is restricted to three
maximum soldering temperature, h<Jwever, must not exceed 90-degree bends; repeated bendings, therefore, shauld be
2750C and must be applied for not more than 5 seconds at a avoided.
~SC.EW O
NOT SUPPLIED WITH DEVICE
9-
. DF137A
- INTEGRAL
INSUlATING WASHER
~
DF103C
e MICA INSULATOR
G (HOLE FOR 4-40 SCREW)
cr"",",
METAL WASHE. @) }
lOCK WASHER @
HEX. NUT @ NOT SUPPLIED WITH DEVICE
'OLOE. LUG ~
HEX. NUT @ (b)
SCREW 632
~N()T"'\lA;lA8L(f_OlC"
NR231A HR231.\
6 RECTANGULAR METAL
REC"':ANCUlAR METAL
::~:,~:::;,~:,,,",,
~ WASHER
WASHER
AVAILABLE AT PUBLISHED
HARDWARE PRICES
::;'~':.~;:.,,","o~.
~I
MICA INSULATOR
/HOLEDIA.-O.1450.141m
6 (3~:~~~,';:2(vICE
0 6 HEAT SINK
<3
'CHASSIS'
6 4953347
& INSULATING BUSHING
I. D . 0.156 ,n. (4.00 mm)
METAL
LOCK
WASHER
WASHER
HEX NUT
e)
S--
S
@ ~OT
~~~~i~~~6~4gl:~~
SHOULDER
~~~~~~~I~:~E::~
A,VAILA8LE fROM ReA
MAX.
THICKNESS"
MAX
fe)
SOLDER LUG ....:2..
HEXNUT @ Fig. 9 - Mounting arrangements for Versawatt transistors: (a)
and (b) methods of mounting in-line-lead types; (c) chassis
In the UnIted Kingdom, Europe, M,ddle East, and Africa, mounting- mounting; (d) mounting on printed-eircuit boards.
Fig. II shows the recommended hardware and mounting
Fig. 9 shows recommended mounting arrangements and arrangements for RCA high-power molded-plastic transistors.
suggested hardware for the Versawatt transistors. The rec- These types can be mounted directly in a socket similar to
that shown in Fig. II (b). The precautions listed for the
tangular washer (NR23IA) shown in Fig. 9(a) is designed to
Versawatt packages should also be followed in the mounting
minimize distortion of the mounting flange when the
of the high-power molded-plastic packages.
transistor is fastened to a heat sink. Excessive distortion of
the flange could cause damage to the transistor. The washer is
particularly important when the size of the mounting hole
exceeds 0.140 inch (6-32 clearance).l.arger holes are needed
to accommodate insulating bushings; however, the holes
should not be larger than necessary to provide hardware
clearance and, in any case, should not exceed a diameter of
y"." ....
0.250 inch. Flange distortion is also. possible if excessive
torque is used during mounting. A maximum torque of 8 ~ SHOULDER BUSHING
inch-pounds is specified. Care should be exercised to assure

that the tool used to drive the mounting screw never comes
in contact with the plastic body during the driving operation.
Such contact can result in damage to the plastic body and
internal device connections. An excellent method of avoiding
this problem is to use a spacer or combination spacer-
isolating bushing which raises the screw head or nut above
the top surface of the plastic body, as shown in Fig. 10. The
material used for such a spacer or spacer-isolating bushing
should, of course, be carefully selected to avoid "cold flow"
and consequent reduction in mounting force. Suggested
materials for these bushings are diallphthalate, fiberglass-
filled nylon, or fiberglass-filled polycarbonate. Unfilled nylon
should be avoided.
Modification of the flange can also result in flange distortion
and should not be attempted. The transistor should not be
soldered to the heat sink by use of lead-tin solder because the
heat required with this type of solder will cause the junction
temperature of the transistor to become excessive.
Fig. 10 - Mounting arrangements in which an isolating
The TO-220AA plastic transistor can be mounted in
bushing is used to raise the head of the mounting screw
commercially available T0-66 sockets, such as UID Elec-
above the plastic body of the Versawatt transistor.
tronics Corp. Socket No. PTS4 or equivalent. For testing
purposes, the TO-220AB in-line package can be mounted in a
Jetron Socket No. CD74-104 or equivalent. Regardless of the
mounting method, the following precautions should be
taken:
The maximum allowable power dissipation in a solid-state
I. Use appropriate hardware.
device is limited by its junction temperature. An important
2. Always fasten the transistor to the heat sink before factor to assure that the junction temperature remains below
the leads are soldered to fixed terminals. the specified maximum value is the ability of the associated
3. Never allow the mounting tool to come in contact thermal circuit to conduct heat away from the device.
with the plastic case.
When a solid-state device is operated in free air, without a
4. Never exceed a torque of 8 inch-pounds. heat sink, the steady-state thermal circuit is defined by the
5. Avoid oversize mounting holes. junction-to-free-air thermal resistance given in the published
data on the device. Thermal considerations require that
6. Provide strain relief if there is any probability that
there be a free flow of air around the d'evice and that the
axial stress will be applied to the leads.
power dissipation be maintained below that which would
7. Use insulating bushings to prevent hot-creep cause the junction temperature to rise above the maximum
problems. Such bushings should be made of rating. When the device is mounted on a heat sink, however,
diallphthalate, fiberglass-filled nylon, or fiberglass- care must be taken to assure that all portions of the thermal
filled polycarbonate. circuit are considered.
2 METAL WASHERS
bSocket No. LS T ~ 1702-1 (Industrial
2 LOCK WASHERS @ Hardware Corp.,
2 HEX. NUTS @ 109 Prince

or
St., N.Y.,
equivalent)
N.Y.
1 SOLDER LUG ~
2HEX.NUTS @
2 METAL WASHERS
2 LOCK WASHERS @
2 HEX. NUTS
, SOLDER LUG ~
2 HEX. NUTS@
Fig. 11 - Mounting arrangements for high-power plastic-package

transistors: (a) chassis mounting; (b) socket mounting; (c) printed-
circuit-board mounting.
Fig. 12 shows the thermal circuit for a heat-sink-mounted Operation of the transistor with heat-sink temperatures of
transistor. This figure shows that the junction-to-ambient 1000C or greater results in some shrinkage of the insulating
thermal circuit includes three series thermal-resistance com- bushing normally used to mount power transistors. The
ponents, i.e., junction-to-case, IJJ-C; case-to-heat-sink,lJc_s; degradation of con tact thermal resistance (refer to Figs. 13
and heat-sink-to-ambient,1J S-A. The junction-to-case thermal and 14) is usually less than 25 per cent if a good thermal
resistance of the various transistor types is given in the compound is used. (A more detailed discussion of thermal
individual technical bulletins on specific types. The heat- resistance, including nomographs, can be found in the RCA
sink-to-ambient thermal resistance can be determined from Solid State Power Circuits, Technical Series SP-52.)
the technical data provided by the heat-sink manufacturer, or During the mounting of RCA molded-plastic solid-state
from published heat-sink nomographs. The case-to-heat-sink power devices, the following special precautions should be
thermal resistance depends on several factors, which include taken to assure efficient heat transfer from case to heat sink:
the condition of .the heat-sink surface, the type of material
I. Mounting torque should be between 4 and 8
and thickness of the insulator, the type of thermal com-
inch-pounds.
pound, the mounting torque, and the diameter of the
mounting hole in the heat-sink_
2. The mounting holes should be kept as small as
possible.
3. Holes should be drilled or punched clean with no

TJ = junction temperature burrs or ridges, and chamfered to a maximum
TC = case temperature
radius of 0.010 inch.
TS = heat-sink temperature
TA= ambient temperature
()J/C = junction-ta-case thermal resistance 4. The mounting surface should be flat within 0.002
0e/s = case-to-heat-sink thermal resistance inch/inch.
(JS/A= heat~sink-to-ambient thermal resistance
5. Thermal grease (Dow Corning 340 or equivalent)

should always be used (on both sides of the
Fig. 12 - Thermal equivalent circuit for a transistor mounted insulating washer if one is employed).
on a heat sink_
6. Thin insulating washers should be used (thickness
of factory-supplied mica washers ranges from 2 to 4
Fig. 13 shows a set of curves of typical case-to-heat-sink mils).
thermal resistance of the Versawatt transistor as a function
of mounting torque for several mounting arrangements. 7. A lock washer or torque washer should be used,
Curves A through D show typical case-to-heat-sink thermal together with materials that have sufficient creep
resistance for the mounting arrangements shown in Figs. 9(a) strength to prevent degradation of heat-sink
through 9(d). Curves E and F are representative of a efficiency during life.
Versa watt transistor mounted over a heat-sink mounting hole
that has a diameter of 0.140 inch (No.6 screw clearance). A wide variety of solvents is available for degreasing and flux
Curve E shows the wide variation in thermal resistance with removal. The usual practice is to submerge components in a
torque when the transistor is mounted dry. Curve F shows solvent bath for a specified time. From a reliability stand-
the effect on con tact thermal resistance of a thin layer of point, however, it is extremely important that the solvent,
Dow Corning No. 340 silicone grease applied between together with other chemicals in the solder-deaning system
transistor and heat sink. For torques within the recom- (such as flux and solder covers), not adversely affect the life
rr:ende'd range of 4 to 8 inch-pounds, contact thermal of the component. This consideration applies to all non-
resistance is reduced to between 18 and 25 per cent of the hermetic and molded-plastic components.
dry values.
It is, of course, impractical to evaluate the effect on
The curves shown in Fig. 14 represent typical case-to-heat- long-term transistor life of all cleaning solvents, which are
sink thermal resistance of the high-power molded-plastic marketed under a variety of brand names with numerous
transistor package as a function of mounting torque. The additives. These solvents can, however, be classified with
thermal resistances shown by curves A and C are representa- respect to their component parts, as either acceptable or
tive of the mounting arrangements shown in Fig_ II (a) unacceptable_ Chlorinated solvents tend to dissolv-:lthe outer
through 11 (c). Curves B and D are typical for mounting package and, therefore, make operation in a humid atmos-
without mica over heat-sink mounting holes that have a phere unreliable. Gasoline and other hydrocarbons cause the
diameter of 0.113 inch (No.4 screw clearance). The effect of inner encapsulant to swell and damage the transistor. Alcohol
a thin layer of silicone grease on contact thermal resistance is and unchlorinated freons are acceptable solvents_ Examples
illustrated by a comparison of curves Band D. of such solvents are:
Alpha Reliaros No. 320-33
Alpha Reliaros No. 346
Alpha Reliaros No. 711
Alpha Reliafoam No. 807
Alpha Reliafoam No. 809
Alcohol (isopropanol, methanol, and special Alpha Reliafoam No. 811-13
denatured alcohols, such as SDAI, SDA30,
SDA34, and SDA44) Alpha Reliafoam No. 815-35
Care must also be used in the selection of fluxes in the

soldering of leads. Rosin or activated rosin fluxes are If the completed assembly is to be encapsulated, the effect
recommended, while organic or acid fluxes are not. Ex- on the molded-plastic transistor must be studied from both a
amples of acceptable fluxes are: chemical and a physical standpoint.
--- r- C
,I-
o
2 6
MOUNTING TORQUE-iN-LBS
MOUNTING HEAT SINK MICA

CURVE ARPoANGEMENT HOLE THICKNESS THERMAL
FIGURE DIA.UN.) IMILS) COMPOUND
A 9(.) .250 4 Dow Corning No.340

B 91b; .113 4 Dow Corning No.340
C 91.) .250 2 Dow Corning No.340
0 91b) .113 2 Dow Corning No.340
E - .140 None None
F - .140 None Dow Corn in9 No.340
Fig. 13 - Typical caseto-heat-sink thermal resistance as a

function of mounting torque for an RCA Versawatt tran-
sistor.
MOUNTING MICA
THERMAL
CURVE ARRANGEMENT THICKNESS
COMPOUND
FIGURE IMILSI
A 11(01 thru 11 (0) 4 Dow Corning No.340
B - None None
C 111.1 thru 11 Ie), 2 Dow Corning No.340
0 - None Dow Corning No.340
Fig. 14 - Typical case-to-heat thermal resistance as a function

d mounting torque for an RCA high-power plastic-package
transistor.
OOm3LJD Thyristors
Division
AN-4242
A Review of Thyristor
Characteristics and Applications
Thyristors, both SCR's and triacs, are now widely accepted in power applications increased, the need for complete ac
in power-control applications. With the emphasis in such cont rol became apparent. The new family of thyristor
applications placed on low cost, small package size, and devices generated to provide bidirectional current properties
circuit simplicity, thyristors satisfy these requirements with is referred to as triacs. A triac can be considered as two
reliability exceeding that of electromechanical counterparts. parallel SCR's (p-n-p-n) oriented in opposite directions to
This ote describes the operation. ratings. characteristics. provide symmetrical bidirectional characteristics.
and typical applications of these devices.
Two-Transistor Analogy
The bistable action of thyristors can be explained by analysis

Thyristors arc semiconductor devices that have character- of the structure of an SCR. This analysis can be related to
istics similar to those of thyratron lubes; more specifically, either operating quadrant of a triac because a triac is
they arc semiconductor switches whose bistable state essentially two parallel SCR's oriented in opposite directions.
depends on the regenerative feedback associated with a A two-transistor analogy of an SCR is illustrated in Fig. I.
pn-p-n structure. Basically, this group includes any bistable Fig. I (a) shows the schematic symbol for an SCR, and Fig.
semiconductor device that has three or more junctions (i.e . l(b) shows the p-n-p-n structure the symbol represents. In
four or more semiconductor layers) and can be switched the two-transistor model for the SCR shown in Fig. l(c), the
from a high-impedance (OFF) state to a conducting (ON) interconnections of the two transistors are such that regen-
state, and from the conducting (ON) state to the high- erative action can occur when a proper gate signal is applied
impedance (OFF) state, within at least one quadrant of the to the base of the lower n-p-n transistor.
principal-voltage characteristics.
In the diagram of Fig. 2, the emitter of the upper (p-n-p)
There are several types of thyristors, which differ primarily transistor is returned to the positive terminal of a dc supply
in number of electrode terminals and operating character- through a limiting resistor R2, and the emitter of the lower
istics associated with the third quadrant (negative) of the (n-p-n) transistor is returned to the negative terminal of the
vol tage-current characteristics_ Reverse-blocking triode de supply to provide a complete electrical path. When the
thyristors, commonly called silicon controlled rectifiers model is in the OFF state, the initial principal-current flow is
(SCR's), and bidirectional triode thyristors, referred to as zero. If a positive pulse is then applied to the base of the
triacs, are the most popular types. Silicon controlled n-p-n transistor, the transistor turns on and forces the
rectifiers have satisfied the requirements of many power- collector (which is also the base of the p-n-p transistor) to a
switching applications with much greater reliability than low potential; as a result, current (la) begins to flow.
electromechanical or tube counterparts. As the use of SCR's Because the p-n-p transistor is then in the active state,
collector current (IC] = Ib2) flows into the base of the n-p-n Fig. 3 illustrates the effects on latching and holding current
transistor and sets up the conditions for regeneration. If the for resistive termination at the base of the n-p-n transis-
external gate drive is removed, the model remains in the ON tor. The collector curren t through the p-n-p transistor must
state as a result of the division of currents associated with the be increased to supply both the base current for the n-p-n
two transistors, provided that sufficient principal current (Ia) transistor and the shunt current through the terminating
is available. resistor. Because the principal-current flow must be increased
to supply this increased collector current, latching and
holding current requirements also increase. The usc of the
~OO, '0 two-transistor model provides a more concise mcaning to the
mechanics of thyristors. In thyristor fabrication, it is
GATE I generally good practice to use a low-beta p-n-p unit and to
include internal resistance termination for the base of the
n-p-n unit. Termination of the n-p-n unit provides immunity
(01
CATHODE
i'i:~: t 'bl" "I "
from "false" (non-gated) turn-on. and the use of the low-beta
'"
..
pip p-n-p units permits a wider base region to be used to support
the high voltage encountered in thyristor applications.
~~ , GATE
~
I'
GATE n
~o
CATHODE
(bl : CATHODE (<I
Fig_ 1 - Two-transistor analogy of an SCR: (a) schematic

symbol of SCR; (b) p-n-p-n structure represented by schema-
tic symbol; (c) two-transistor model of SCR.
Theoretically, the model shown in Fig. 2 remains in the ON

state until the principal current flow is reduced to zero.
Actually, turn-off occurs at some value of current greater
than zero. This effect can be explained by observation of the
division of currents as the value of the limiting resistor is
gradually increased. As the principal current is gradually
reduced to the zero current level, the division of currents Fig.3 - Two-transistor model of SCR with resistive termina-
within the model can no longer sustain the required tion of the n-p-n transistor base.
regeneration and the model reverts to the blocking state.
The two-transistor model illustrates three features of thyris- Voltage and Temperature Ratings
tors: (I) a gate trigger current is required to initiate The effects of temperature and voltage are important in
regeneration, (2) a minimum principal current (referred to as thyristors because these deviccs posscss regenerative action
"latching current") must be available to sustain regeneration, and are required to support high voltage in the OFF state. In
and (3) reduction of principal-current flow results in turn-off the two-transistor model shown in Fig. 2, an increase in
at some level of current flow (referred to as "holding temperature causes a leakage current which, if allowed to
current") slightly greater than zero. migrate to the base of the n-p-n transistors, forces the
transistor into the active region. Regenerative action then
calls for additional leakage current, and causes the model to
switch into the ON state and establish a principal-current
flow. For reliable operation at high temperature, the base of
the n-p-n transistor should be terminated with a low value of
resistance to prevent turn-on as a result of. high-temperature
operation.
Because gate termination is required on all thyristors, ReA
devices contain a diffused internal gate-cathode resistor (the
so-called "shorted-emitter" design) and do not require
external gate termination. Therefore, it is not necessary to
specify an OFF-state rating under the conditions of external
gate-resistance termination. The use of this internal shunt
resistance improves the OFF -state blocking capability,
Fig.2 - Two-transistor model connected to show a complete provides increased immunity against false turn-on, and
electrical path. slightly increases gate-current requirements.
OFF-state voltage ratings of thyristors are specified for both voltage. When the SCR is in the ON state, the forward
steady-state and transient operation for both forward current is limited primarily by the impedance of the ext~rnal
(positive) and reverse (negative) '-'locking conditions at the circuit. Increases in forward (principal) current are accom-
maximum junction temperature. For SCR's, voltages are panied by only a slight change in ON-state voltage.
considered to be forward (positive) when the anode is at a
positive potential with reference to the cathode. Negative If the triac is considered as two parallel SCR's oriented in
voltages are referred to as reverse-blocking voltages. For opposite directions to provide symmetrical curreilt flow, the
(riacs, voltages are considered to be positive when main behavior of a triac under positive or reverse voltage operation
terminal 2 is at a positive potential with reference to main is essentially the same as that of an SCR in the forward-
terminal I; this condition is referred to as first-quadrant (I) blocking mode.
operation. Third-quadrant (III) operation occurs when main
terminal 2 is at a negative potential with reference to main Gate Characteristics
terminal I. Fig. 4 shows the principal voltage-current The breakover voltage of a thyristor can be varied, or
characteristics for both SCR's and triacs. . controlled, by injection of a signal at the gate terminal. Fig. 5
REVERSE
BREAKOVER
VOL lAGE
Ig4 ICj3 192 191"

THYRISTOR BREAKQvER AS FUNCTION OF GATE CURRENT
ON STATE
V
!/CURRENT
HOLDING
shows curves of breakover as a function of gate current for
----- fi~st-quadrant operation of an SCR. A similar set of curves
can be drawn for both the first and the third quadrant to
~::;-2--
CURRENT
represent triac operation.
When the gate current 19 is zero, the applied voltage must
reach the breakover voltage of the SCR or triac before
ON STATe
switching occurs. As the value of gate current is increased,
OUADRANT.m
IU.lN TERMINAL 2 NEGATIVE however, the ability of a thyristor to support applied voltage
is reduced and there is a certain value of gate current at
Fig.4 - Principal voltage-current characteristics of sews and which the behavior of the thyristor closely resembles that of
triacs. a rectifier. Because thyristor turn-on, as a result of exceeding
the breakover voltage, can p,oduce instantaneous power
Operation of an SCR under reverse-blocking voltage is similar dissipation during the switching transition, an irreversible
to that of a reverse-bi3sed silicon rectifier or other semicon-
condition may exist unless the magnitude and rate of rise of
ductor diodes. In this operating mode, the SCR exhibits a
principal current is restricted to tolerable levels. For normal
very high internal impedance, and a small reverse current
operation, therefore, thyristors are operated at applied
flows through the p-n-p-n structure until the reverse break-
voltages lower than the breakover voltage, and are made to
down voltage is reached, at which time the reverse current
switch to the ON state by gate signals of sufficient amplitude
increases rapidly. For forward (positive) operation, the SCR
to assure complete turn-on independent of the applied
is electrically bistable and exhil:its either high impedance
voltage. Once the thyristor is triggered to the ON state, the
(forward-blocking or OFF state) or low impedance (forward-
principal-current flow is independent lJf gate voltage or gate
conducting or ON state). In the forward-blocking state, a
current, and the device remains in the ON state until the
small leakage current, considered to be of approximately the
principal-current flow is reduced to a value below the holding
same value as that for reverse leakage, flows through the
current required to sustain regeneration.
p-n-p-n structure. As the forward voltage is increased, a
"breakdown" point is reached at which the forward current The gate voltage and current reqUired to switch a thyristor
increases rapidly and the voltage across the SCR decreases from its high-impedance (OFF) state to its low-impedance
abruptly to a very low voltage, referred to as the forward ON (ON) state at maximum rated forward anode current can be
determined from the circuit shown in Fig. 6. Resistor R2 is to main terminal I. The potential difference between the two
selected so that the anode current specified in the manufac- terminals is such that gate current flows in the direction
turer's ratings flows when the device latches into its indicated by the dotted arrow. The polarity symbol at main
low-impedance or ON state. The value of RI is gradually terminal 2 is also referenced to main terminal I. The
decreased until the device under test is switched from its semiconductor materials between the various junctions with-
OFF state to its low-impedance or ON state. The values of in the pellet are labeled "p" and "n" to indicate the type of
gate current and gate voltage immediately prior to switching majority-carrier concentrations within the material.
are the values required to trigger the thyristor. For an SCR,
there is only one mode of gate firing capable of switching the For the various operating modes, the polarity of the volrage
device into the ON state, i.e., a positive gate signal for a on main terminal 2 with respect to main terminal I is given
positive anode voltage. If the gate polarity is reversed by the quadrant in which the triac operates (either I or III),
(negative voltage), the reverse current flow is limited by the and :he polarity of the gate signal used to trigger the device is
value of R2 and the gate-cathode internal shunt. The value of given by the proper symbol next to the operating quadrant.
power dissipated for the reverse gate polarity is restricted to For the 1(+) operating mode, main terminal 2 and the gate
the maximum power-dissipation limit imposed by the ma:l- are both positive with respect to main terminal I. Initial gate
ufacturer. CUi"fent flows into the gate terminal, through the p-type
layer, across the junction into the n-type layer, and out main
terminal I, as shown by the dotted arrow. As gate current
flows, current multiplication occurs and the regenerative
action within the pellet switches the triac to its ON state.
Because of the polarities indicated between the main
terminals, the principal current flows through the p-n-p-n
structure as shown by the solid arrow. Similarly, for the
other three operating modes, the initial gate-current flow is
shown by the dotted arrow, and principal-current flow
through the main terminals is shown by t;le solid arrow.
Fig.6 - Circuit used to measure thyristor gate voltage and Because the direction of principal current influences the gate
current switching threshold. trigger current, the magnitude of the current reqUired to
trigger the triac differs for each mode. The operating modes
Because of its complex structure, a triac can be triggered by in which the principal current is in the same direction as the
either a positive or a negative gate signal regardless of the gate current require less gate trigger current; modes in which
voltage polarity across the main terminals of the device. Fig. the principal current is in opposition to the gate current
7 illustrates the triggering mechanism and current flow require more gate trigger current.
within a triac. The gate trigger polarity is always referenced
Because triacs are bidirectional, they can provide full-cycle
(360-degree) control of ac power from either a positive or a
negative gate-drive signal. This feature is an advantage when
it is necessary to control ac power from low-level logic
systems such as integrated-circuit logic. With gate-power
requirements for turn-on in the milliwatt region, triacs are
capable of controlling power levels up to 10 kilowatts. Thus,
the power gain associated with these thyristors far exceeds
that of transistor counterparts in the semiconductor switch-
ing field.
Like many other semiconductor-device parameters, the mag-
nitude of gate trigger current and voltage varies with the
junction temperature. As thermal excitation of carriers
within the semiconductor material increases, the increase in
leakage current makes it easier for the device to be triggered
by a gate signal. Therefore, the gate becomes more sensitive
in all operating modes as the junction temperature increases.
Conversely, if a triac or SCR is to be operated at low
temperatures, sufficient gate trigger current must be provided
to assure triggering of all devices at the lowest operating
temperature expected in any particular application. Varia-
m{+) tions of gate-trigger requirements are given in the published
Fig.7 - Current flow in a triac. data for individual thyristors.
The gate current specified in published data for thyristors is
the dc gate trigger current required to switch an SCR or triac
into its low-impedance state. For practical purposes, this dc
r:~90'POINT
value can be considered equivalent to a pulse current that has
VFB 1 1
a minimum pulse width of 50 microseconds. For gate-current 1 I
pulse widths smaller than 50 microseconds, the pulse-current
curves associated with a particular device should be used to o_l_L i_L __
I 1 1
assure turn-on.
I 1 1
I I I
When pulse triggering of a thyristor is required, it is always 1 1 1
--1-1
advantageous to provide a gate-current pulse that has a T I
I
1
I
'- 90% POINT
magnitude exceeding the dc value required to trigger the PRINCIPAL
CURRENT I 1 1
device. The use of large trigger currents reduces variations in
0_.l.J 1-+----
turn-on time, increases di/dt capability, minimizes the effect
of temperature variation on triggering characteristics, and
~ 'd --i--l- '.
I I I
makes possible very short switching times. When a thyristor I---- '" --1
is initially triggered illto conduction, the current is confined 1
to a small area which is usually the more sensitive part of the

cathode. If the anode current magnitude is great, the
localized instantaneous power dissipation may result in
irreversible damage unless the rate of rise of principal current
is restricted to tolerable levels to allow time for current
"~~-
spreading over a larger area. When a much larger gate signal is
applied, a greater part of the cathode is turned on initially; as
a result, turn-on time is reduced, and the thyristor can time associated with the thyristor because of the increased
support a much larger peak anode inrush current. current density at the gate-cathode periphery. Of major
importance in the turn-on time interval is the relationship
between thyristor voltage and principal current flow through
Switching Characteristics the thyristor. During the turn-on interval, the dynamic
Ratings of thyristors are based upon the amount of heat voltage drop is high and the current density can produce
generated within the device pellet and the ability of the localized hot spots in the pellet area. Therefore, it is
device package to transfer the internal heat to the external important that power dissipation during turn-on be restricted
case. For highperformance applications in which switching to levels within device specifications.
of high peak current values but narrow pulse widths is
desired, the internal energy dissipated during the turn-on
process must be determined to assure that power dissipation
is within ratings.
When thyristors (either triacs or SCR's) are triggered by a

gate signal, the turn-on time consists of two stages, a delay
time td and a rise time tr, as shown in Fig. 8. The total
turn-on time tgt is defined as the time interval between the
initiation of the gate signal and the time for the principal
anode c~rrent flow through the thyristor to reach 90 per
cent of its maximum value for a resistive load. The delay
time td is defined as the time interval between the
SO-per-cent point of the leading edge of the gate trigger
voltage and the 10-per-cent point of the principal current for
a resistive load. The rise time tr is the time interval required
for the principal current to rise from 10 to 90 per cent of its 25 50 75 100 125 150 175
maximum value. The total turn-on time ton is the sum of DC GATE-TRIGGER CURRENT (IGT)- mA
both delay and rise time (td + tr). Fig.9 - Thyristor turn-on time as a function of gate trigger
current.
Although the thyristor is affected to some extent by the
peak off-state voltage and the peak on-state current level, the Turn-off time of a thyristor can be associated only with
turn-on time is influenced primarily by the magnitude of the SCR's. In triacs, a reverse voltage cannot be used to provide
gate-trigger pulse current, as shown in Fig. 9. Faster turn-on circuit-commutated turn-off voltage because a reverse voltage
time for larger gate drive is a result of a decrease in delay applied to one half of the triac structure would be a
forward-bias voltage to the other half. For turn-off times in of a full-wave rectifier bridge, however, there is no reverse
an SCR, the recovery period consists of two stages, a reverse voltage available for turn-off, and complete turn-off can be
recovery time and a gate recovery time, as shown in Fig. 10. accomplished only if the bridge output is reduced to zero
volts or the principal current is reduced to a value lower than
I the device holding current.
d"'FBdt~'
I Because turn-off times are not associated with triacs due to

the physical structure of the device, a new term is introduced
called "critical rate of rise of commutation voltage", or the
ability of a triac to commutate a fixed value of current under
---t- o
specified conditions. The rating can be explained by con-
sideration of two SCR's in an inverse parallel mode, as shown
in Fig. II. SCR-I is assumed to be in the conducting state
- - - - - - - - - - - --- 0
I
I
'1jI' ----I
I
'ofl ---j
I
When the forward current of an SCR is reduced to zero at Fig. 11 - Circuit used to demonstrate critical rate of rise of
the end of a conduction period, application of reverse voltage commutation voltage.
between the anode and cathode terminals causes reverse
current to flow in the SCR until the time that the reverse with forward current established. As the principal cur.ent
current passes its peak value to a steady-state level called the flow crosses the zero reference point, a small reverse current
reverse recovery time trr. A second recovery period, called flows in SCR-I until the time that the SCR reverts to the
the gate recovery time, tgr, must then elapse for the OFF state. The principal current is then diverted to SCR-2,
forward-blocking junction to establish a depletion region so provided that sufficient gate current is available to that
that forward-blocking voltage can be reapplied and success- device.
fully blocked by the SCR. The gate recovery time of an SCR
is usually much longer than the reverse recovery time. The The structure of a triac shown in Fig. 12 indicates that the
total time from the instant reverse recovery current begins to main blocking junctions are common to both halves of the
flow to the start of the forward- blocking voltage is referred
to as circuit-eommutated turn-off time tq.
Turn-off time depends upon a number of circuit parameters,

including on-state current prior to turn-off, rate of change of
current during the forward-to-reverse transition, reverse-
blocking voltage, rate of change of reapplied forward voltage,
gate trigger level, the gate bias, and junction temperature.
Junction temperature and on-state current have a more
significant effect on turn-off than any of the other factors.
With turn-off time specified on the manufacturer's data sheet
and dependent upon the conditions as outlined above,
turn-off time specification is only meaningful if all of the
above critical parameters are available in the actual applica-
tion.
For applications in which an SCR is used to control 60-Hz ac device. When the first half of the triac structure (SCR-I) is in
power, the entire negative half of the sine wave is a turn-off the conducting state, a quantity of charge accumulates in the
condition and more than adequate for complete turn-off. For n-type region as a result of the principal current flow. As the
applications in which the SCR is used to control the output principal current crosses the zero reference point, a small
reverse current is established as a result of the charge capability to support a fast rate of rise of applied voltage.
remaining in the IHype region. Because the n-type region is The result is a loss of power control to the load, and the
common to both halves of the devices, this reverse recovery device remains in the conducting state in absence of a gate
current becomes a forward current to the second half of the signal. Therefore, it is imperative that some means be
triac. The current resulting from stored charge may cause the provided to restrict the rate of rise of reapplied voltage to a
second half of the triac to go into the conducting state in the value which will permit triac turn-off under the conditions of
absence of a gate signal. Once current conduction has been inductive load.
established by application of a gate signal, therefore, com-
plete loss in power control can occur as a result of An accepted method for keeping the com mutating dv/dt
interaction within the n-type base region of the triac unless within tolerable levels during triac turn-off is to use an RC
sufficient time elapses to assure turn-off. It is imperative that snubber network in parallel with the main terminals of the
triac manufacturers provide sufficient information regarding triac. Because the rate of rise of applied voltage at the triac
commutating capabiiity under maximum current and terminal is a function of the load impedance and the RC
case-temperature conditions so that triac control of ac power snubber network, the circuit can be evaluated under worst-
for resistive loading in a 60-Hz power source can be assured. case conditions of operating case temperature, maximum
principal current, and any value of conjunction angle. The
Commutation of triacs is more severe with inductive loads values of resistance and capacitance in the snubber are then
than with resistive load~ because of the phase lag between adjusted so that the rate of rise of commutating dv/dt stress
voltage and current associated with inductive loads. Fig. 13 is within the specified minimum limit under any of the
shows the waveforms for an inductive load with lagging conditions mentioned above. The value of snubber resistance
should be high enough to limit the snubber capacitance
discharge currents during turn-on and dampen the LC
oscillation during commutation (turn-off). Any combination
of snubber resistance and capacitance that provides the
requirements outlined above is considered satisfactory.
Some of the factors affecting commutating dv/dt capability

of triacs are temperature, current magnitude, rate of change
of curren t during commutation, and frequency of the applied
principal current. With frequency directly related to commu-
tating di/dt, early triac use was restricted to 60-Hz applica-
tions. Continued technological advances in triac device struc-
ture has resulted in faster "turn-off' capability and made
possible a new family of triacs having 400-Hz commutating
capability that is now being offered to circuit designers who
must work with 400-Hz source voltages.
Another important parameter for thyristors is the "critical

rate of rise of off-state voltage". A source voltage can be
suddenly applied to an SCR or a triac which is in the OFF
state through either closure of an ac line switch or transient
voltages as a result of an ac line disturbance. If the fast rate
of rise of the transient voltage exceeds the device rating, the
thyristor may switch from the OFF state to the conducting
state in the absenc of a gate signal. If the thyristor is
controlling alternatit voltage, "false" turn-on (non-gated)
current power factor. At the time the current reaches zero resulting from a tran mt imposed voltage is limited to no
crossover (point A), the half of the triac in conduction kgins more than half the applied voltage because turn-off occurs
to commutate when the principal current falls below the during the zero current crossing. However, if the source
holding current required to sustain regeneration. Because the voltage suddenly applied to the OFF thyristor is a dc voltage,
high-voltage junction is common to both halves of the triac, the device may switch to the ON state and turn-off could
the stored charge can be neutralized c.nly by recombination. then be achieved only by circuit interruptions. The switching
At the instant the conducting half of the triac turns off, an from the OFF state is caused by the internal capacitance of
applied voltage opposite to the current polari:y is applied the thyristor. A steep-rising voltage dv/dt impressed across
across the triac terminals (point B)_ Because this voltage is a the terminals of a thy! istor causes a capacitance-charging
forward bias to the second half of the triac, the sudden current to flow through the device. This charging current
reapplied voltage in conjunction with the remaining stored (i;Cdv/dt) is a function of the rate of rise of applied off-state
charge in the high-voltage junction reduces the over-all device voltage. Il' the rate of rise of voltage exceeds a critical value,
the capacitance-charging current exceeds the gate trigger frequently encountered in thyristor applications. When an
current and causes device turn-on. Operation at elevated RC snubber is added at the thyristor terminals, the rate of
junction temperatures reduces the thyristor ability to sup- rise of voltage at the terminals is a function of the load
port a steep rising voltage dv!dt because less gate current is impedance and the RC values used in the network. In some
required for turn-on. The effect of temperature on the applications, "false" (non-gated) turn-on for even a portion
critical rate of rise of off-state voltage is shown in Fig. 14. of the applied voltage cannot be tolerated, and circuit
response to voltage transients must be determined. An
Vo ~ vORO .
effective means of generating fast-rising transients and
GATE OPEN observing the circuit response to such transients is shown in
..
w
'">-
~
Fig. J 5. This circuit makes use of the "splash" effects of a
a mercury-wetted relay to transfer a capacitor charge to the
>
..
w
>-
1.250 input terminals of a control circuit. This approach permits
>-
~
1,000
'" generation of a transient of known magnitude whose rate of
rise of voltage can easily be displayed on an oscilloscope. For
"'"
*
u.
a
w ~
a::~ 750
"'-..
'------ -.......
a given load condition, the values in the RC snubber network
can be adjusted so that the transient voltage at the device
u.'"
a terminals is suppressed to a tolerable level. This approach
..
w
>-
..'"
~
u
>=
500
250
---r-- --- affords the circuit designer with meaningful information as
to how a control circuit will respond in a heavy transient
environment. The circuit is capable of generating transient
"'
u
32V
Fig. 14 - Critical rate of rise of off-state voltage as a function

of case temperature.
Voltage transients which occur in electrical systems as a result

of disturbance on the ac line caused by various sources such
b~ j ~
5 I
I
MERCURY
(CP CLAIRE
HGP-101B)
RELAY
6~~NciNUTTR6~Rc~~tu~~
as energizing transformers, load switching, solenoid closure,
contacto!"s, and the like may generate voltages which are \.
above the ratings of thyristors and result in spike voltages
exceeding the critical rate of rise of off-state voltage
J;
OUTPUT
capability. Thyristors, in general, switch from the OFF state PULSE
to the ON state whenever the breakover voltage of the ~>

dt '" 10k V~s
device is exceeded, and energy is then transferred to the 8
load. Good practice in the use of thyristors exposed to a
heavy transient environment is to provide some form of
transient suppression.
For applications in which low-energy, long-duration tran- voltages in excess of 10 kilovolts per microsecond, which
sients may be encountered, it is advisable to use thyristors exceeds industrial generated transients. The response of a
that have voltage ratings greater than the highest voltage 100-millihenry solenoid control circuit exposed to a fast-
transient expected in the system to proVide protection rising transient is shown in Fig. 16.
against destructive transients. The use of voltage clipping
cells is also effective. In either case, analysis of the circuit Use of Diacs For Control Triggering
application will reveal the extent to which suppression
Basically, thryristors are current-dependent devices, and the
should be employed. In an SCR application in which there is
magnitude of gate current IGT and voltage VGT required to
a possibility of exceeding the reverse-blocking voltage rating,
trigger a thyristor into the on-state varies. The point at which
it is advisable to add a clip cell or to use an SCR with a
thyristor triggering occurs depends not only on the required
higher reverse-blocking voltage rating to minimize power
gate current and voltage, but also on the trigger source
dissipation in the reverse mode. Because triacs generally
impedance and voltage. Fig. 17 shows a family of curves
switch to a low conducting state, if the di!dt buildup of the
representing the gate-circuit load line between the open-
principal current flow after turn-on is within device ratings it
circuit source voltage and the short-circuit current for
is safe to assume that reliable operation will be achieved
different time intervals. In a circuit which applies time-
under the specified conditions.
dependent variable voltage Vac to a load and the gate trigger
The use of an RC snubber is most effective in reducing the current required to trigger the thyristor is derived from the
effects of the high-energy short-duration transients more same source Vac, devices that have a gate current Igl are
HORIZONTAL"
VERTICAL"
0 IJLs/em.
200 V/cm
~
11121~
nI
1,1n Fig. 17 - Thyristor gate-circuit load line for different time
.'MI
....,. intervals.
RC SNUBBER R-'20.fl, exJtibits a high-impedance blocking state up to a breakover

CoO 21'F voltage V(BO), above which the device enters a negative-
resistance region. The characteristic curve in Fig. 18 shows
rIBO,' --- -- ~
---- --- IIBO'"
the negative characteristics associated with diacs when they

are exposed to voltages in excess of the breakover voltage
V(BO). Because of their bidirectional properties and break-
over voltage level, diacs are useful in triac control circuits in
which variable power is to be supplied to a load. Because of
their negative characteristic slope, diacs can also be used with
dV/dt capacitors to provide the fast-rising high-magnitude trigger
10 kV/fls
current pulses recommended in thyristor applications which
INPUT PULSE
require efficient gate turn-on for the purpose of switching
high-level load currents.
Fig. 16 - Waveforms showing response of a 100-millihenry In normal applications, diacs are used in conjunction with
solenoid control circuit to a fast-rising transient. RC phase networks to trigger triacs, as shown in Fig:19. The
triggered earlier in the ac cycle than devices that have a

higher gate trigger current Fig. 3. Although the circuit is
capable of providing variable power to the load, it is heavily
dependent on the gate current distribution, and results in
uncontrolled conduction angles for a given value of gate
series resistance. Furthermore, the circuit does not provide
the recommended gate-current overdrive for switching of the
fast-rising high-amplitude load currents present in resistive
loading. A more efficient circuit for control of variable
power to a load that eliminates the need for tight gate-
current distribution uses a solid-state trigger device, called a
diac, which is voltage dependent.
The diac, often referred to as a bidirectional trigger diode, is
a two-terminal, three-layer, transistor-like structure that
RC phase network provides an initial phase-angle displace-
ment</!so that conduction angles in excess of 90 degrees can
be realized. As the voltage on the capacitor begins to build
up in a sinusoidal manner, the breakover voltage V(BO) of
the diac is reached, the triac is turned on, and a portion of
the ac input voltage ;s provided to the load, as represented by
the angle a. As previously mentioned, the diac offers a
negative-resistance region and is capable of providing current
pulses whose magnitude and pulse width are a function of
the capacitor C and the combined impedance of the diac and
the gate and main terminal ot' the triac. When the voltage on
the capacitor C reaches the breakover voltage V(BO) , the
capacitor does not discharge completely, but is restricted to circuit are not critical because the SCR has a half-cycle of
some finite level as a result of the diac negative-impedance applied negative voltage in which to recover. The SCR
characteristic at high values of pulse current. Fig. 20 shows provides a reliable, highly efficient, long-life control for
the peak pulse current of a diac as a function of the half-wave control circuits.
capacitances of the phasing capacitor C. Fig. 22 shows a full-wave bridge that feeds a resistive load
and uses an SCR as the control element for load current.
Power control is accomplished by SCR turn-on at various
n
IPK
conduction angles with respect to the applied voltage. The

PULSE
~ ~RRENT
criteria for turn-off in this circuit is important because the
SCR must recover its forward-blocking state during the time
~3",--1 that the forward current stops flowing. Although this time
1.0
interval may appear to be very small, close analysis of the
..
..z, 0.8 voltage wave during the transition time in which the
full-wave bridge reverses direction reveals that substantial
~
w
~ D.
time exists for turn-off.
"
u
'"w..
D.'
0.. 0.2
Fig.20 - Peak pulse current of a diac as a function of phasing

capacitance.
In the control of ac power by means of semiconductor

devices, emphasis has been placed on circuit simplicity, low
cost, and small over-all package size. Thyristors meet these
goals, and are also capable of providing either fixed or Fig. 23 shows one-half of the bridge during the time that the
adjustable power to the load. Fixed power is achieved by use forward current is approaching zero current. Two diodes are
of the thyristor as an ON-OFF switch, and adjustable power in series with the SCR; it is generally accepted that a diode
through the use of an RC phase network which provides
variable phase-gating operation. The following section dis-
cusses both SCR and triac circuit operations, and analysis of
SCR and triac behavior for various circuit conditions.
Many fractional-horsepower motors are series-wound

"universal" motors capable of operation from either an ac or
a dc source. In the early stages of thyristor control, SCR's
found wide acceptance in the control of universal motors,
particularly in the portable power tools market. SCR's are
capable of providing speed control over half of an ac sine
wave, and, if full power is required, a simple shorting switch
across the SCR provides the necessary function; such a Fig.23 - Half of bridge circuit of Fig. 22 when forward
switch is shown in Fig. 21. Turn-off parameters for this current approaches zero for a resistive load.
voltage of approximately 0.6 volt is required to maintain times for SCR's are industry-standardized to include peak
each diode in conduction. If it is further assumed that a forward current, rate of rise of reverse current, peak forward
voltage of approximately 0.6 volt is required across the SCR blocking voltage applied, and rate of rise of applied blocking
to maintain conduction, the sum of the voltage drops over voltage. The presence of the applied reverse current helps to
the circuit requires 1.8 volts; below this value, the SCR drops shorten turn-off times because the reverse current sweeps out
out of conduction. As the bridge reverses current direction, the charge in the blocking junction. For SCR operation from
the same analysis holds true, i.e., forward conduction current a full-wave bridge in which there is no appreciable reverse
is not resumed until the sum of the voltage drops exceeds 1.8 voltage available, turn-off is accomplished through recombin-
volts. ation, and the effects of circuit loading on SCR operation
must be clearly evaluated.
The waveform during the interval that the voltage wave goes
from 1.8 vofts to zero can be analyzed by reference to Fig. FuJi-wave ac switching can also be performed by use of two
24. A half-cycle (180 degrees) of conduction requires 8.3 SCR's in an inverse parallel mode, often referred to as a
milliseconds, one degree being equal to approximately 46 "back-to-back" SCR pair, as shown in Fig. 25. This circuit
microseconds. Because a sine wave is linear for very small can be used as a simple static switch or as a variable phase
angles, a graph can be constructed to show the time interval control circuit. It does not make use of a full-wave diode
during which the voltage is less than 1.8 volts for various bridge, but simply uses the SCR's in an alternating mode.
magnitudes of applied voltage. Analysis of the voltage wave The circuit has the disadvantage of separate trigger logic, but
for an angle of one degree shows that an input voltage of 120 possesses an inherent advantage in higher-frequency applica-
volts rms results in a voltage equal to 2.9 volts, which decays tions because advantage can be taken of the periods of the
to zero in 46 microseconds. Because the SCR is alternating voltage in which either device may recover to its
non-conducting below a circuit threshold of 1.8 volts, a time blocking state. During the half-cycle of the applied voltage
of 28.5 microseconds then elapses while the voltage decays that SCR-I is conducting, SCR-2 is reverse-biased and can
from 1.8 volts to zero. An equal time is required for the recover its blocking state. Because of the applied reverse
bridge to build up to the threshold voltage of 1.8 volts. voltage and associated time of the half-cycle voltage, turn-off
Therefore, a total exposure time of 57 microseconds elapses times are not critical.
in which the SCR is allowed to regain its forward-blocking
state.
As shown in Fig. 24, increasing the magnitude of the applied

voltage source to 240 volts rms cuts in half the time interval
which the SCR is allowed for turn-off. Further increases in
input voltage magnitude result in shorter turn-off periods.
LlJ 2.9V Fig.25 - Full-wave ac switching circuits using a "back-to-

~ l.av back" SCR pair.
?
This two-SCR circuit is often favored over a triac circuit,
I I TloE -f" I even though separate trigger sources are required, because it
I I ~ 14.2 ---t
I f---- 28.5 -------i is supposed to have better commutating capability. Fig. 26
I. 46#5 , I shows the waveforms of com mutating dv/dt for the SCR
circuit. If the load is inductive with lagging current power
Fig.24 - Waveform 0': circuit in Fig. 22 as voltage wave goes factor, the conducting SCR commutates at the time the
from 1.8 volts to zero. principal current reaches zero crossover (point A) and reverts
to the blocking state; a reapplied voltage of opposite polarity
This analysis gives a clear, well-defined picture of the turn-off equal to the source voltage then appears across the non-
time available for a resistive load. However, for reactive conducting SCR. Because this voltage is a forward-bias
loads, such as fractional-horsepower motors, the turn-off voltage to the non-conducting SCR, device turn-on can occur
conditions, including turn-off time and dv/dt stress, are more if the rate of rise of applied forward voltage exceeds the
difficult to define because they are affected by a number of device rating for critical rate of rise of off-state voltage. For
variables, including the back EMF of the motor, the ratio of inductive loading in an inverse-parallel-mode SCR applica-
inductance to resistance, the motor loading, and the phase tion, power control to the load can be lost if the rate of rise
angle of motor current to source voltage. Normally, turn-off of applied voltage is exceeded.
Fig. 27 shows the basic triac-diac light-dimmer control circuit
with the triac connected in series with the load. During the
beginning of each half-cycle, the triac is in the off-state and
the entire line voltage is across the triac; therefore, no
'--,, voltage appears across the load. (Actually, there is some
, voltage across the load as a result of triac leakage currents,
which are a function of applied voltage and junction tempera-
ture. However, these leakage currents are relatively small, at
most in the milliampere range, and the resulting load voltages
are generally ignored.)
The RC charge-control circuit is in parallel with the control

triac, and the applied voltage serves to charge the timing
capacitor C through the variable resistor R. When the voltage
across C reaches the breakover voltage V(RO) of the diac, the
capacitor discharges through the diac and the gate-to-main-
terminal-I impedance of the triac and turns on the control
triac. At this point, the line voltage is transferred to the load
for the remainder of the applied half-cycle voltage. As the
load current reverses direction (zero crossing), the triac turns
off and reverts to the blocking state. This sequence of events
is repeated for every following half-cycle of applied voltage.
Fig.26 - Waveforms of commutating dv/dt for SCR circuit of

Fig. 25.
Although it may appear that the rate of rise is extremely fast,

closer circuit evaluation reveals that the dv/dt stress is
restricted to some finite value which is a function of the load
reactance L and the device capacitance C. Therefore, it is
important that the rate of rise of applied voltage during
commutation not exceed the device specification for critical
rate of rise of off-state voltage under worst-case condition or
unreliable operation may result. It is generally good practice
in inverse-parallel operation to use an RC snubber network If the value of resistance R is decreased, the capacitor charges
across the SCR pair to limit the late of rise to some finite to the breakover voltage V(RO) of the diac earlier in the ac
value below the minimum requirements, not only to limit the cycle; the power supplied to the load is then increased and
voltage rise during commutation, but also to suppress the lamp intensity is effectively increased. If the value of
resistance R is increased, triac triggering occurs later in the ac
transient voltage that may occur as a result of ac line
cycle and applied voltage to the load is reduced; the result is
disturbances.
uecreased lamp intensity. Therefore, changes in the resistance
As previously mentioned, the use of semiconductor devices value R effectively apply variable power to a load (which is a
for ac power control has emphasized circuit simplicity, low lamp load in the circuit of Fig. 27, but could also be a motor
cost, and small over-all package size. The development of the load or heating element).
bidirectional triode thyristor, referred to as a triac, achieved
all of these goals. Triacs can perform the same functions as Although the load is arbitrarily placed in series with main
two SCR's for full-wave operation, and also simplify gate
terminal 2, the circuit performs equally as well if the load is
logic requirements for triggering.
shifted to main terminal I. (Actually, any commercial lamp
A simple, inexpensive triac circuit that can provide variable dimmer available has two wires brought out for external
power to a load over a full cycle' of applied voltage is the connection, and the chance that the load will be connected
light-dimmer circuit. This circuit contains a diac, a triac, and to main terminal I is 50 per cent.) The only requirements for
an RC phase-control network. The basic lightdimmer circuit reliable operation are that the RC phase network be in
is described below because it provides a good example of parallel with the triac and that capacitor-discharge loop
triac behavior as related to load reqUirements and of the currents be directed from the diac to the triac gate and main
operation of a diac in an RC phase-control circuit. terminal I. Although the basic light-control circuit operates
with the component arrangement shown in Fig. 27, addi- to reduce the effective diac negative resistance and minimize
tional components are often added to reduce hysteresis the change in capacitor voltage. However, this change reduces
effects, extend the effective range of power control, and the gate current pulse and, if not carefully controlled, may
suppress radio-frequency interference. result in di/dt failures because the triac switches high-
magnitude current under minimum gate drive.
Hysteresis in triac phase.control circuits is referred to as the
ratio of applied load voltage when the triac initially turns on A more effective method of reducing hysteresis is to use a
(as control potentiometer is slowly reduced from some high second RC time constant, or a "double-time-constant"
value) to the value of load voltage prior to "extinguishing" circuit such as that shown in Fig. 29. As C2 supplies the
(as the control potentiometer is slowly increased to some
higher value). If the circuit has high hysteresis, the control
potentiometer travel may be as high as 25 per cent before
triac turn-on occurs, after which the control potentiometer
may be turned back 15 per cent before the triac "ex-
tinguishes". Hysteresis is an undesirable feature if the circuit
application requires low-level lamp illumination because a
momemtary drop in line voltage may result in the triac
"extinguishing" or missing one half-cycle of applied voltage
when the capacitor voltage is barely equal to the breakover
voltage V(BO) of the diac. If this condition exists, the
control potentiometer must be reduced to "start up" the
triac again.
Hysteresis is a result of the capacitor discharging through the charging voltage for the diac breakover voltage V(BO), the
diac and not recovering the original voltage prior to abrupt change is capacitor voltage during diac turn-on is
triggering. Fig. 28 shows the waveforms of the charging partially restored by capacitor CJ , as shown in Fig. 30. The
restoring of the charge on C2 maintains the original triggering
point very closely and results in extended range of the
control setting. This triac circuit can be turned on for very
low levels of applied voltage and is not prone to "extinguish-
ing" for line-voltage drops.
' 2na [THEORET1CAL)

GATE TRIGGER
POINT
Fig.28 - Charging cycle of capacitor-diac network in Fig. 27 ~

(high hysteresis).
" (THEORE
2,.TICAL)
GATE TRIGGER
POINT
capacitor C as related to the applied line voltage_ The initial

Fig.30 - Charging cycle of capacitor-diac network in Fig. 29
displacement angle is a result of the phase angle due to the
(reduced hysteresis).
value of the RC components used. As the value of the
control potentiometer is slowly reduced, the value of
charging voltage reaches the breakover voltage V(BO) of the
diac, and the triac allows that portion of the ac wave Because triac switching from the high-impedance to the
remaining to appear at the load, as represented by the shaded low-impedance state can occur in less than one microsecond,
area at the first trigger point. At this point, there is an abrupt the current applied to the load increases from essentially zero
change in capacitor voltage (A V):Therefore, as the capacitor to a magnitude limited by the load impedance within the
charge reverses direction, the second trigger point is reached triac switching time. This rapid rise of load current produces
much earlier in the next half-cycle, and that portion of the ac radio-frequency interference (RF!) extending into the range
wave remaining appears across the load, as represented by the of several megahertz. Although this rapid rise does not affect
shaded area at the second trigger point. The second trigger television and FM radio frequencies, it does affect the
point and subsequent trigger points represent the steadystate short-wave and AM radio bands. The level of RFl generated
level at which triggering occurs. Some reduction in hysteresis is well below that caused by small ac/dc brush-type motors,
can be realized by inserting a resistor in series with the diac but some means of RFI suppression is generally required if
the triac phasecontrol circuit is to be used for any extended load by turning on the triac at the beginning of the
period of time in an environment in which RFI generation zero-voltage crossing. Because the triac turns on near zero
cannot be tolerated. current, the sudden current steps associated with phase
control circuits and the RFI generated are minimized. The
A reasonably effective suppression technique is shown in Fig. RCACA3059 zerovoltage switch is a monolithic integrated
31. An inductor is connected in series with the triac control circuit used primarily as a triggercurrent generator for con
circuit to restrict the current rate of rise, and a filter trol of thyristor turnon during the zerovoltage transition.
capacitor is used in parallel with the entire network to bypass This circuit has many features, one of which is a fail-safe
highfrequency signals. circuit which inhibits output pulses in the event that the
external sensor is opened or shorted.
J' ~.I~F"""'"
+
100 1.LH
lJ e!GHT
CONTROL
.~ RCUtT I
Conclusions
This Note
temperature
has reviewed
and voltage conditions,
thyristors
gate trigger character
istics, and effects of SCR's and triacs on circuit performance.
from the viewpoints of
. ~ TIle availability of power thyristors gives design engineers

greater freedom in achieving circuit simplicity, low cost, and
small package assembly than electromechanical or tube
counterparts. Technological improvements are far from
reaching the saturation level, but are opening new doors for
The values shown in Fig. 31 are effective in reducing RFI circuit application. The impact of thyristor applications is
noise for rms load currents up to 6 amperes to such an extent being felt in normal everyday environments such as
that the effects on shortwave and AM signals are either residential lamp dimming, TV deflection systems, home
minimized or considered tolerable. For values above 6 appliances, marine ignition, automotive applications, electric
amperes rms, additional suppression can be achieved by use heating, comfort controls, and igniters for fuelfired furnaces.
of dual chokes in the ac lines to the triac network. Industrial applications for multiplehorsepower motors, lamp
Depending on the circuit performance required, such display boards, inverters, relay protection or replacement,
suppression mayor may not be effective and other means of radar, sonar, and emergency standby generating systems are
triac control may be required. now finding widespread acceptance in thyristor controls. The
introduction of RCA triacs fully characterized for 400Hz
An alternate method of providing highcurrent heating commulating capability opens the doors to many aircraft
controls is through use of a proportional control circuit using support applications which preViously were devoid of the
integralcycle synchronous switching or zerovoltage switch advantages offered in solidstate design. It appears that the
ing. This approach varies the average power 10 the load answer to most powercontrol applications may be the
through controlled bursts of full cycles of ac voltage to the thyristor.
OOa3LJ1] Thyristors
Division
AN-4537
Thyristor Control of Incandescent

Traffic-Signal Lamps
This Note discusses the use of thyristors in the control of

traffic signals. The thyristor most applicable to this
application is the triac, which can carry the electrical power
required for incandescent traffic-light bulbs, yet can be gated
by the low-power signals from electronic control timers or
monitoring computers. In addition, the triac is able to handle
the large transient currents that result from cold ftIament
turn-on (inrush) and ftIament rupture (flashover). Triac
operation, stresses on triacs in operation with incandescent
lamps, and a number of triac circuits for control of
incandescent lamps in traffic signal applications are discussed
below.
t;
0HSTATE
TRIAC OPERATION
A triac, shown schematically in Fig. I(a), is a bidirec- HOLDING
CURRENT
tional triode thyristor. In the absence of a gate signal, the
triac blocks both portions of an ac sine wave, but a ------,._-
steady-state or pulsed gate signal will switch it on as in Fig.
I(b). The gate signal can be either positive or negative with
respect to main terminal no. I (MTl), while MT2 can also be -H::::;--
CURRENT
either positive or negative referenced to MTl; the four pos-

ON STATE
sible modes of switching are depicted in Table I. For example,
QUADRANTm
when a triac is triggered by connecting a resistor between MAIN TERMINAL 2 NEGATIVE
MT2 and the gate, as shown in Fig. 2, the triac operates in

the 1+ and III- modes in energizing the ac load. Other Fig. 1- (a) Schematic svmbol. and (b) principal voltage-
thyristor characteristics will be introduced below as needed, current characteristic for a triac.
while an extensive review of thyristors is available in RCA
Application Note AN-4242, "A Review of Thyristor Char-
acteristics and Applications".
SURGE CURRENT THROUGH TRIACS IN MODE MT2 G

INCANDESCENT-BULB OPERATION
1+ + +
The traffic-control circuit designer must be aware of two
1- +
characteristics of incandescent bulbs: end-of-life fIlament
111+ +
rupture and cold-filament inrush surge. Both these transient
111-
conditions impose a high surge stress on the controlling triac,
which without proper circuit design can be destructive.
Flashover ruptures. The rupture is most likely to occur as a result of a

Flashover is a short-duration, extremely high-current termination in bulb life; however it can be caused by a
surge through the triac that is initiated when a lamp filament mechanical shock. The mechanism of flashover is initiated by
be depended upon to protect the triac. Fusing of triac
circuits is described in more detail in the following discussion
of inrush current.
Inrush
In tungsten-filament lamps, the cold filament resistance is
approximately 1/18 to 1/12 of the hot mament resistance.
The actual currents in a circuit under inrush and steady-state
conditions do not vary in these ratios, however, because of
the inductance and external limiting resistance of the
circuitry, including the lead-in wires to the bulb. Further-
more, it is obvious that the highest inrush current will occur
the gap formed when rupturing occurs. The instantaneous at the peak of the voltage sine wave in a lamp load circuit. If
value of line voltage across the break sets up an electric field switching occurs at any other phase of the voltage sine wave,
that ionizes the gases in close proximity to the gap. The the peak current through the bulb is less than "worst case".
ionized gases, usually argon and nitrogen, provide an Typically, the maximum inrush peak current can be ten times
electrical conduction path across the gap, and the resulting as great as the steady-state peak current, while the peak inrush
current heats and ionizes more gases until an arc is formed current with zero-voltage switching can be approximately five
across the filament lead-in wires. The arc is maintained as times as great as the steady-state peak current, as shown in
long as the regenerative heating and ionization continue. Fig. 4. Thus zero-voltage switching of a lamp effects a soft
Finally, because of either increasing arc length or decreasing turn-on that reduces the initial peak of inrush current by half
ac line voltage, or both, the electric field becomes too weak and greatly increases bulb life. This increase of bulb life by
to sustain the a,'c, and the arc is extinguished. zero-voltage switching has been verified by test results; an
Fig. 3 shows a flashover current pulse. Its magnitude and increase in life of approximately ten times, with a 90 per cent
duration depend on many factors. The actual peak magni- confidence level, has been reported. Thus maintenance costs
tude of the source voltage, the voltage phase at the instant of are reduced and system reliability increased.
filament rupture, and the impedance of the lead wires and Fig. 4 shows how the current in a lamp circuit decreases
other circuitry (including RFI filters) all affect the duration to the steady-state value. The rate of decrease depends upon
and magnitude of the surge. Typical values can be given for the thermal time constant of the tunsten filament. A
the stress of flashover at a load center point. For bulbs of less
than 75 watts the duration of the surge can be typically less
than 2 milliseconds. For bulbs of 100 to 150 watts the dura-
tion of the surge can be typically less than 4 milliseconds. The
magnitude of surge can vary considerably, with typical peak
~:,"'
values ranging from 80 to 200 am peres when the flashover
occurs near the maximum voltage point. If the flashover
occurs at a zero-voltage crossing, the current surge may be
reduced as a result of the dependence of the magnitude on the
voltage phase at rupture. 2T03TlMES
Ipk STEADY STATE
~
Because of the short duration of the flashover current, it

.....100 ms
is usually difficult to provide circuit fuse protection against
flashover. Most incandescent bulbs are provided with a fuse
built into one of the lead-in wires. This built-in fuse is not
100-per-cent effective against flashover and therefore cannot
L / 2 TO :3 TIMES
Ipk STEADY STATE
.....100 ms
Fig. 4- (a) Inrush current at peak voltage point, and

(b) inrush current at zero-voltage point.
AN,4-537. .__ ... .. __. ... _.._._... ~_._
a bulb is exposed to its most severe normal operating stress
during inrush, the weakest spot of the fIlament often
ruptures and causes a flashover at turn-on. Most often,
switching and flashover occur at some point other than the
peak voltage; therefore the resulting peak current is usually
within the handling capability of the triac.
Fuses in incandescent-lamp circuits must not blow under
the stress of inrush current, yet must blow under flashover
current. For lowpower bulbs the flashover current is
substantially greater than the peak inrush current, and fuse
protection is simple. For example, a 100-watt bulb might Fig. 5- Functional block diagram of the RCA-CA3059
integrated-circuit zero voltage switch.
have a typical flashover current of 100 to 200 amperes and a
typical inrush current of 10 amperes. For large-wattage The circuit shown in Fig. 6 has one disadvantage for
bulbs, however, fusing is difficult. For a 1000-watt bulb, the traffic controls, in which the bulb load is usually grounded
peak flashover current might still be between 100 and 200 and the power circuit ground and the logic ground are
amperes, while the peak inrush current is approximately 120 common. This arrangement presents a severe problem of
amperes. Fuses set to blow at 150 amperes peak flashover int~rfacing between logic and power circuitry. If the load in
current of short duration may also blow under the Fig. 6 were grounded, terminal No.4 of the CA3059 would
long-duration, slightly-lower-amplitude stress of inrush. As a be at line voltage above ground and the substrate (terminal
result, a fusing solution to the problem of triac protection No.7) at ground potential when the bulb was energized. As a
would be marginally reliable. One solution is to use a result, the IC would be destroyed. Similar problems are
40-ampere triac (available in the RCA-2N5443 series), which encountered whenever the logic circuitry is directly coupled
has a single-cycle surge capability of 300 amperes, to control with the triac power circuit and the load is grounded.
this 10-ampere load. Here again system reliability would be However, this problem is eliminated in the discrete-
improved and maintenance costs reduced. component circuits described below.
CIRCUITS Discrete-Component Zero-Voltage Switching

With the closelyrelated transient stresses imposed on a A discrete-eomponent circuit that accomplishes zero-
triac by an incandescent-Iightbulb circuit having been noted, voltage switching of a grounded tungsten mament load is
a number of circuits that help to reduce these stresses on the
triac and increase lifetime of the bulb are discussed below.
Zero-Voltage Switching with an IC

An RCA-CA3059 integrated circuit (IC) can be used with
a triac to accomplish zero-voltage switching of a load. A
functional block diagram of this IC is shown in Fig. 5. The
CA3059 is a monolithic, multistage, integrated circuit that
incorporates a diode limiter, a threshold detector, a
differential amplifier, a Darlington output driver, and other
features. A more extensive description of this IC is given in
RCA Application Note ICAN-6l82, "Features and Applica-
tions of RCA Integrated-Circuit ZeroVoltage Switches." The
CA3059-and-triac circuit for zero-voltage switching is shown 120 VAC
60Hz
in Fig. 6. When QI is off, the IC does not generate pulses to
the gate of the triac. When QI is biased on, the IC generates
gating pulses of approximately 40 milliamperes for 100
microseconds that straddle the zero-voltage crossing points. j
These pulses trigger the triac on in the 1+ and III+ modes at
the zero-voltage crossing for the resistive-tungsten-mament
bulb and effect the desired result of decreasing inrush Circuit that uses the CA3059 and a triac to switch
current. a lamp at zero voltage.
shown in Fig. 7. With Q lon, T1 is on and source voltage is firing is accomplished by the standard double-time-constant
shunted away from the load. With QI biased off, T1 is off lamp-dimmer gate circuitry of T2. The low-conduction-ohase
and T2 is gated on through RI and RJ. When T2 conducts, it firing of the bulb keeps the tungsten fllament warm but not
connects R4 from gate to MT2 of T3, and thus triggers T3 on hot enough to radiate any readily visible light. When QI is
in the 1+ and III- modes. Because T2 is a sensitive-gate device, turned on, T1 is gated on and R3 is shorted, and the lamp
it turns on close to the zero-voltage point; therefore, the load load turns on.
is also zero-voltage switched after the initial turnon. For a The associated waveforms are shown in Fig. 9. For a
typical T2300B device, triggering in the 1+ and Ill modes 200-watt bulb in the circuit of Fig. 8, the first peak of
results in firing at about 7 volts peak on the line. After T3 is current through the bulb was 7.5 amperes when the warm up
turned on, the triggering circuitry is shorted; therefore, no circuit was used and 25 amperes with cold-fllament inrush.
triggering power is dissipated while the lamp is on. These circuits of Figs. 7 and 8 show that triacs can be
used to switch power lamp loads and also interface with
Filament Pre-Heating low-level logic systems. They also show how some of the
Another approach to reducing the inrush current is stresses involved with the switching of incandescent lamps
shown in Fig. 8, where a fllament pre-heater function is can be reduced. Other switching circuitry for use in traffic
included in the switching arrangement. In this circuit, when controls is discussed below.
QI is off the logic interfacing triac T1 is off. R3, which can
be a fixed resistor of approximately 98 kilohms, is set so that OTHER APPLICABLE ON.QFF SWITCHING
T2 is fired for only a small portion of the voltage cycle. This CIRCUITS
Two other circuits that can be used in the traffic control
area are shown in Figs. 10 and 12. These circuits have the
advantages of a common ground between logic and power
circuitry, grounded bulbs, and isolation between the dc logic
and the power circuitry afforded by use of the interfacing
logic triacs.
In the positive-logic switching circuit of Fig. 10, logic
triac T I is used to interface between the low level logic and
the load triac T2. With T1 gated on, C I is charged through
RI to the breakover voltage of the diac, at which point T2
and the load are triggered on. The various circuit waveforms
are shown in Fig. II. As Fig. II(d) shows, there is
continuous gate power driving T2 wheneve: T I is on and
thus the light is on hard.
A variation of this circuit with opposite (negative) logic is
shown in Fig. 12. In this circuit, when T1 is triggered on, T2
and the lamp are off. When T1 is off, CI can charge through
Fig. 7- Discrete-component circuit used to switch a RI and R2 to diac breakover, which discharges CI into the
grounded load at zero voltage. gate of T2 and energizes the load. The waveforms of this
circuit are shown in Fig. 13. Little gate power is dissipated in
this circuit because T2 shorts across its gate circuitry when it
C2 is on.
0.068 jJ.F
+5V
t\
r 2N5755
7, -11--.e"'9
Fig. 8- A circuit including a filament pre-heat arrange- Fig. 9- Waveforms for circuit in Fig. 8: (a) voltage on bulb
ment. when 01 is off; (b) voltage on bulb when 01 is on.
L ~
120 v AC
VT,
f Igt=25 mA
'" 'I TIME

Ig, O~---~ T'ME
(01
(0)
,I C\ 1\ TIME
'n
" 1 (b) V
VT201C\'20V ~
V (e)
~~IC\VLJ (0)
TIME
VLol~_C\'20v
(d) CJ
C ",I C\
;J
1'\ TI~~
-32V-M r ,,1 I ~
VCO~_32V_c=J
TIME
~ ~
i (.)
(.)
Fig. 13- Waveforms for negative-logic switching.
to the control triac is de and is alternated between Tl and T2

Both of these circuits are shown with continuous gate according to the timing set in the multivibrator. A waveform
drive into triac TI. Logic power could be conserved by use of for the component values shown is displayed in Fig. 15. The
pulse drive, with no change of power stage operation; timing can be modified by selecting different values for any
however, the logic circuitry would be more complex. of the following components: RI, R2, R3, R4, CI, C2. The
important features of this circuit are the simple, rugged de
THYRISTOR FLASHER power supply used and the use of SCR's as both timing and
Thyristors can also be used to advantage in flasher-type memory devices to trigger the triacs. Alternative approaches
traffic-control systems. In these applications, two lights are to the traffic control flasher are given in ICAN-6l82, "Features
usually flashed on and off as a warning display. Fig. 14 shows and Applications of RCA Integrated-Circuit Zero-Voltage
a thyristor circuit that accomplishes this flashing function. Switches_"
As shown, a silicon-controlled-rectifier (SCR) multivibrator
functions as the timer and flasher-triggering driver. The drive
100
lo}
1
120VAC
~ 8b
Bb:::::8czO.30 SEC. j ~"

CIRCUIT
RELAY
R~
AC - DC ISOLATION
In the circuits shown thus far, either a triac or an IC is
used to interface between the dc logic and the ac power
circuitry. A number of other methods can be used to isolate
these stages in a traffic controller. The circuit of Fig. 16
illustrates the use of a reed-type relay. When the relay is
activated, the triac is gated in its 1+ and III- modes and little
power is dissipated in the gate circuit. Fig. 17 shows the use
a I I
_~_\:~_.LL- _ _ ~ TIME
of a light source and photocell combination. Because the

photocell is part of a single-time-constant circuit, it must
have enough dark resistance to keep the voltage across C I
below 32 volts so that the diac does not switch and discharge
the capacitor into the gate of the triac at all times. A pulse
transformer can also be used for isolation, as shown in Fig. 18.
A 5-kHz signal into the gate turns the triac on at initiation of
the pulsing and keeps it on until the oscillator is stopped.
Fig. 16- (a) Circuit, and (b) waveforms of reed-relay gate
control.
RFI SUPPRESSION
Radio-frequency interference (RFI) that can result from One method of reducing RFI is zero-voltage switching
the fast triac SWitching of high power loads must be with resistive loads; thus, the circuits above that utilize the
considered in traffic control circuits. When an ac load is RCA-CA3059 IC inherently include RFI suppression. Cir-
switched on, as shown in Fig. 19, RFI is generated in the cuits that do not use zero-voltage switching require external
initial wavefront. This steep wavefront contains many filters for RFI suppression. A typical filter used in
harmonics that can be sustained by the circuit Q. conjunction with ac loads is portrayed in Fig. 20. The effect
~O~~_~ __ "TIME
r:c"
RFI FILTER
r-----j
I I
I IOO/l-H I
I I
I I
I OI~F I
120 V AC L --I
120VAC
LOGIC
1 CIRCUIT
Thyristors
ffilCTI3LJD Application Note
Solid State
Division
AN-4745
Analysis and Design of Snubber

Networks for dv/dt Suppression
in Thyristor Circuits
When a triac is used to control an inductive load, voltages Fig. 2 shows the triac principal voltage and current
with high rates of change (dv/dt) can be generated that can waveforms when the load is resistive. If the gate signal is
cause a non-gated turn-on of the triac. This false turn-on can removed at time to' the device continues to conduct until the
occur if the dv/dt exceeds the critical rate of rise of commuta- current attempts to reverse polarity. The device then
tion voltage of the triac, or if voltage ringing occurs that undergoes a reverse recovery period, and thereafter must
exceeds the blocking capability of the triac (VOROM)' The support a main terminal voltage of the reverse polarity that is
false triggering caused by these mechanisms resul ts in a loss equal to the source voltage. The rate of reapplication of this
of control of power to the load; to assure reliable operation, off-state voltage for a resistive load and a l20-volt 60-Hz
therefore, it is necessary to provide means to suppress this source is typically 0.064 volt per microsecond if the stray
dv/dt stress as it is commonly called. The simplest method of inductance due to wiring is minimal. This rate of reappli-
dv/dt suppression is the use of a series RC network across the cation generally does not cause turn-on of the device.
main terminals of the triac. The design of this network,
commonly called a snubber network, must take into account
the peak voltage that can be allowed in the circuit, and the
maximum dv/dt stress that the device can withstand. This
Note analyzes the RC network design and presents graphs
that allow a designer to select a snubber to fulfill his
requirements.
Commutating dv/dt And False Turn-On TRIAC

PRINCIPAL
Fig. I shows a control triac in a typical connection with CURRENT
an ac power source and a load. The triac is a regenerative

device; once it has been turned on, it continues to conduct
until the principal current drops below a value that just
supports the regeneration. This current level is called the TRIAC
PRINCIPAL
holding current of the device. If the gate signal is removed VOLTAGE
before the principal current decreases below the holding
current, the device turns off and regains its blocking
capability.
Fig. 2- Principal voltage and current for a triac in operation
with a resistive load.
In a circuit with an inductive load the voltage leads the

current by some phase angle <P as shown in Fig. 3. After the
triac turns off it must block the reapplied instantaneous line
voltage of the reverse polarity. Because the triac goes from
the conducting state to the blocking state in a very short
time, this voltage is reapplied very rapidly. The turn-off of
Fig. 1- Series connection of a triac, an inductive load, and the triac causes a rapid decay of current through the
an ac power source. inductance, and thus produces an Ldi/dt voltage. This rapidly
capability (VOROM) of the device. Malfunction of the device
is then caused by the inability of the triac to block the
SOURCE
voltage even though it can withstand the dv/dt stress. An
VOLTAGE/ example of voltage ringing is shown in Fig. 7(a). Fig. 7(b)
I shows the same voltage on an expanded time scale.
TRIAC
PRINCIPAL
CURRENT
,-
TRIAC
PRINCIPAL TRIAC
VOLTAGE PRINCIPAL
CURRENT
Fig. 3- Principal voltage and current for a triac in operation

with an inductive load.
rising off-state voltage stress is impressed across the main
terminals of the device and can cause it to turn on. Fig. 4
illustrates this false turn-on.
A triac analog that uses two silicon controlled rectifiers
(SCR's) provides a simple understanding of how this dv/dt Fig. 4- Principal voltage and current curves showing triac
causes the device to turn on. The inverse parallel SCR analog malfunction that results from commutating dv/dt
of the triac is ,~own in Fig. 5(a), and a twotransistor analog produced bV inductive load.
of the SCR is shown in Fig. 5(b). At the end of the half cycle
of on-state current conduction, some charge remains in the
bases of the equivalent transistors that comprise the conduct-
ing SCR. Upon application of the opposite-quadrant off-state
voltage, this charge flows as a recovery current. Part of this
current flows through the equivalent transistor emitter of the
adjacent SCR. In addition, some charge may already exist in
the bases of the blocking SCR because of lateral transport of
carriers from the previously conducting side. Finally, a
capacitive displacement current flows to the reverse-biased
middle junction of the blocking SCR; this displacement
current, lOIS, can be described by the following equation:
k
CATHODE
dV dCM
IDIS = CM dt + V ctt
where CM is the capacitance of the reversebiased junction Fig. 5- (al TwoSCR representation of a triac; (bl two
and V is the voltage across that junction. transistor model of an SCR, with junction capa-
If the total of the three currents is sufficient to cause the citance shown.
sum of the transistor gains to become unity, the device
switches on. The use of the shorted-emitter construction by
RCA shunts some of the current away and thus permits a
higher dv/dt stress to be placed across the device, but does
not eliminate the current completely. The first two current
flows are functions of device design and construction, but
the displacement current flow can be controlled by use of an
RC snubber network that limits the rate of reapplication of
off-state voltage.
The snubber network, illustrated in Fig. 6, consists of a
resistance RS and a capacitance Cs placed in series across the
main terminals of the device. For some snubber component
values and some types of load, excessive ringing can occur in Fig.6- Triac circuit using a snubber network of RS and Cs
the circuit; this voltage ringing can exceed the blocking connected across the triac.
Condition 112: (RL + RS)2 = 4L!C
-IVMI
qc(t) = ~cos (WI + + 0)
250
T v
+ cext [(I + ext) qd + idt]
1 Condition
qc(t)
1l13: (RL
= ~cos
-IVMI
+ RS)2
(wt
> 4L!C
+ + 0)
--1 1- 20/",
(o) +
cext
T[ (exqd + idt) sinh Ii'l + Ii 'qd cosh Ii 't 1
...L
50V
= tan'] (w L!RL)
T dv V2 - VI
dt~
0= -tan -I [(WL-....!-C )!(RL + RS)]
w S
RL + RS
I
Ii, _~(RL
- --- + RS~2
- LCs
2L
Fig. 7- (a) Ringing, caused by inductive load, in the
principal voltage of triac; (b) principal voltage
_1 __ f.RL + RS\ 2
shown on an expanded scale.
Basic Circuit Analysis

LCS \ 2L 7
The suppression network must be designed to limit the
dv!dt stress and to have an acceptable voltage overshoot. Fig. . I
8 shows an equivalent circuit used for analysis, in which the (RL + RS) + J(wL --C)
w S
triac has been replaced by an ideal switch. When the triac is
in the blocking or nonconducting state, represented by the
open switch, the circuit is a standard RLC series network IVMI
driven by an ac voltage source. The following differential qd= wlZI cos(+O)+qc(O)
equation can be obtained by summing the voltage drops
around the circuit: IVMI
i(O) -1Zi sin ( + 0)
(RL + RS) i(t) + L diet) + qcc(t) = VM sin (wt + ) (2)
dt S
~[exqdli+id] 2 +qd2
in which i(t) is the instantaneous current after the switch
opens, qc(t) is the instantaneous charge on the capacitor, VM
is the peak line voltage, and is the phase angle by which
the voltage leads the current prior to opening of the switch. liqd )
1) = tan -I .
After differentiation and rearrangement, the equation be- ( exqd + Id
comes a standard second-order differential equation with
constant coefficients. With the imposition of the boundary
The voltage across the device is determined by calculating
conditions that i(O)=O and qc(O)=O, the equation for the the voltages across the snubber capadtor and resistor from
charge on the capacitor can be stated for the three circuit
the following fundamental relations:
conditions as follows:
Condition II: (RL + RS)2 < 4L!C t) _ qcCt)

vCS
(
-C"S
-IVMI
qc(t) =~cos (wt + + 0)
dqcCt)
+ IQtI .ext sin (~t + 1)) vRS (t) = RS -d-t-
The sum of these two voltages then represents the instantan where V I and t I are the voltage and time of the 10-per-cent
eous voltage across the triac. The following equations give point and V2 and t2 are the voltage and time of the
the instantaneous voltage for the three circuit conditions: 63-per-cent point. This program therefore allows evaluation
of various load and snubber combinations in a matter of
Condition I: (RL + RS)2 <4L/C minutes.
-IVMI [ I
v(t)=-IZ-I-[wCS cos(wt+1>+O)
-RS sin (wI + 1>+ 0)] + IQtIE-<Xt
[C~ sin ({3t+ 1) + ~ sin ({3t+ 1) + IjI)J (18)
where IjJis defined by the following expression:
1jJ= tan-I ~)
In general, it is most desirable from a cost standpoint to

Condition II: (RL + RS)2 = 4L/C
use a device with the lowest possible VDROM capability. For
-IVMI applications involving the control of a load operating on a
vet) = -IZ-I-
120-volt ac line a device with a VDROM of 200 volts would
be desirable; a 400-volt device should be used for operation
on a 220-volt line. The use of the lower-voltage device in any
~~s cos(wt + 1>+0) - RS sin(wt + + 0)]
application is contingent on the ability of the circuit to limit
any possible voltage ringing below the VDROM rating of the
+_1_ [(I + <Xt)qd + idt] c<Xt
device. The snubber can be designed to limit this voltage
Cs ringing during the post-commutation period to within this
+ RS [(I - <Xt)id - <x2tqd] E-<Xt (20)
rating. Figs. 9 and 10 show the values of Cs and RS that
limit peak voltage across the triac to specific values. Fig. 9
allows the selection of snubber components that will limit
Condition III: (RL + RS)2 > 4L/C the peak voltage of 200 volts for a zero-power-factor load at
-IVMI [ I the desired dv/dt for an rms line voltage of 120 volts. Fig. 10
vet) = -I-Z-I- wCs cos (wt + + 0) shows the components that limit the voltage to 400 volts
when the rms line voltage is 220 volts.
E-<Xt
-RS sin (wt + 1>+0) +-,-
] (3 Cs Snubber Design Procedure
For use of the graphs, three things must be known: (I)
the rms line voltage, (2) the rms load current, and (3) the
allowable dv/dt. The following procedure is used to obtain
the required snubber components:
(I) Draw a vertical line on the proper voltage graph at the
load current.
(2) At the intersection of the vertical line and the dashed line
that represents the allowable dv/dt, draw a horizontal
line to the right vertical axis. Read the value of RS from
the right vertical axis.
A computer is used to calculate the voltage across the
(3) At the intersection of the vertical line and the solid line
snubber because hand calculation is time-consuming. The
that represents the allowable dv/dt, draw a horizontal
magnitude and time of occurrence of the peak voltage are
line to the left vertical axis. Read the value of Cs from
found by numerical analysis, and then the values and times
the left vertical axis.
of the voltages at 10 per cent and 63 per cent of peak are
As an illustration of the above procedure. Fig. 9 is used
calculated. These values are used to compute the dv/dt stress
as defined by the following equation: to find snubber component values that limit the dv/dt stress
to 5 volts per microsecond for a 40-ampere rms current in a
l20-volt rms line. From Fig. 9, these values are Rs = 340
dv _ V2-Vl ohm and Cs = 0.18 microfarad.
/dt -t2=ti As previously stated, these graphs were developed to
limit the peak voltage for a zero-power-factor load. For the
non-ideal load the graphs are used in the same fashion; a
reduction in the peak voltage following commutation and a case, a triac with higher dv/dt capability or higher VDROM
slight reduction in the dv/dt stress are the only effccts rating should be used. A higher dv/dt capability allows
introduced by the non-ideal load. The reduction in the peak selection of new snubber components to meet the size and/or
voltage excursion is caused by the decrease in instantaneous cost requirements of the circuit. A higher VDROM rating
voltage at the time of commutation. As the power factor permits a higher peak voltage excursion that in general will
increases, the phase angle between the voltage and current allow selection of a smaller snubber capacitor and smaller
decreases toward 00. This decrease in the phase angle shifts resistor.
the time of commutation in the half-cycle toward the The circuit analysis described in this Note assumes the
zero-voltage crossing and thus reduces the instantaneous effects of the triac to be a minimum. Thus some error is
voltage. The reduction in the dv/dt stress is the result of both introduced by neglect of the reverse recovery process and the
the reduction in the voltage at commutation and the displacement current. The additional current flow tends to
increasing resistive impedance of the load. increase the instantaneous dv/dt during the first few
microseconds following commutation. The over-all effect is
to increase sliglllly the average dv/dt stress across the device.
This effect is most noticeable when the snubber capacitance
is less than 0.001 microfarad. Selection of a snubber for a
lower dv/dt stress limit will generally eliminate this problem.
'"'" Because the design of a snubber is contingent on the
~ t.o load, it is almost impossible to simulatc and test every
~ : possible combination under actual operating conditions. It is
"
1
'"
u
advisable to measure the pcak amplitude and rate of rise of
voltage across the triac after a snubber has been selected.
or
I 10
'"
~
u
0.10

RMS LOAD CURRENT (I )-AMPERES ;t
;:;
Fig. 9- Design curves for snubber that limits peak voltage
to 200 volts for 120-volt ac line and zero power
factor.
A numerical example shows how a load that is not purely

inductive reduces the peak voltage after commutation. The
snubber components for 8 volts per microsecond at an rms
468 468
current of 22.7 amperes are found from Fig. 9 to be 960 I 10 10D
ohms and 0.04 microfarad. If the load is purely inductive, RMS LOAD CURRENT (I.) - AMPERES
the peak voltage is limited to 200 volts. If the load has the
same current rating but a power factor of 0.7, this snubber
nctwork limits the peak voltage after commutation to 140 Fig. 10- Design curves for snubber that limits peak voltage
volts. Tlie peak voltage is reduced because the instantaneous to 400 volts for 220-volt ac line and zero power
line voltage at the time of commutation is only 121 volts. factor.
n,C dv/dt stress is also slightly lower than the 8-volts-per-
microsecond value. n,is example demonstrates that the
dcsign graphs of Figs. 9 and 10 can be used for loads having References
any power factor. I. Myril B. Reed, AJternati"g Current Circuit Theory (New
Because the selection of snubber components is de- York: Harper & Brothers, 1948), pg. 276.
pendcnt on circuit and device characteristics, values obtained 2. Ibid, pg. 284.
may be impractical from a cost or sizc standpoint. In such a 3. Ibid, pg. 284.
Thyristors
ffilCI8LJD
Division
AN-6054
Triac Power Controls for

Three- Phase Systems
The growing demand for solid-state sWitching of ac 2. Only one logic command signal is available for the
power in heating controls and other industrial applications control circuits. This signal must be electrically
has resulted in the increasing use of triac circuits in the isolated from the three-phase power system.
control of three-phase power. This Note explains a basic 3. Three separate triac gating signals are required.
approach to the ctesign of triac control circuits for use in the 4. For operation with resistive loads, the zero-voltage-
switching of three-phase power. The basic design rules switching technique should be used to minimize any
employed in this approach are outlined. an integrated-circuit radio-frequency interference (RFI) that may be
zero-voltage switch specifically intended for use in triac generated.
triggering is briefly described, and the necessity for and
methods of isolation of the dc logic circuitry in power
controls for three-phase systems are pointed out. Recom Integrated-Circuit Zero-Voltage Switch
mended configurations are then shown for power-control The RCA-CA3059 integrated-circuit zero-voltage switch
circuits intended for use with both inductive and resistive is intended primarily as a trigger circuit for the control of
balanced three-phase loads, and the specific design require- thyristors and is particularly suited for use in thyristor
ments for each type of loading condition are discussed. temperature-control applications. Fig. I shows a functional
(Unbalanced threephase systems, which have different block diagram of the CA3059 integrated-circuit zero-voltage
design requirements, are not covered in this Note.) switch. This multistage circuit employs a diode limiter, a
threshold detector, a differential amplifier, and a Darlington
output driver to proVide the basic switching action. The dc
supply voltage for these stages is supplied by an internal
zener-diode-regulated power supply that has sufficient
In the powercontro! circuits described in this Note, the
current capability to drive external circuit elements. such as
RCA-CA3059 integrated-circuit zero-voltage switch is used as
transistors and other integrated circuits. The trigger pulse
the trigger circuit for the power triacs. * The following developed by this circuit can be applied directly to the gate
conditions are also imposed in the design of the triac control
of an SCR or a triac. A built-in fail-safe circuit inhibits the
circuits:
application of these pulses to the thyristor gate circuit in the
I. The load should be connected in a three-wire
even! that the external sensor for the integrated-circuit
configuration with the triacs placed external to the
switch should be inadvertently opened Or shorted. The
load; either delta or wye arrangements may be used.
CA3059 may be employed as either an on-off type of
Four-wire loads in wye configurations can be handled
controller or a proportional controller, ctepending upon the
as three independent single-phase systems. Delta
degree of temperature regubtion required.
configurations in which a triac is connected within
Fig. 2 shows the schematic diagram for the CA3059
each phase rather than in the incoming lines can also
integrated circuit. Any triac that is driven directly from the
be handled as three independent single-phase systems. output terminal of this circuit should be characterized for
operation in the 1(+) Or 111(+) triggering modes, i.e., with
*'n addition to the CA3059, the RCA-CA3058 and -CA3079
positive gate current (current flows into the gate for both
integrated-circuit zero-voltage s\\'llchc'i may al50 be used for tfiac
trjgg:erjn~ in the power-control circuits. All information given on the polarities of the applied ac voltagc). The clfcuil opcrJtes
CA3059 in this Note is, in general, equally applicable to the CA3058 directly from a 50-, 60-, or 400-Hz ac line voltage of 12(: to
and CA3079. 277 volts.
AC Input Voltage Input SerIes DISSipation Ratmg
(50/60 or 400 Hz) ReSIStor (RS) for RS
VAC k !! W
2. 2 0.5
120 '0 2
208/230
271
20
25

5
Fig_ I-Functional block diagram of the CA3059 integrated-circuit

zero-voltage switch_
I---~-
I
I
I
I 0.
I
I 0,
I RCA CAJ059
L __ 1~EC.RATi.o. ....~C~T _
ALL RESISTANCE VALUES ARE IN OHMS F AI1~p~iFE

transistor 0 I), which generates an oujput pulse during each for polyphase power systems, however, this type of isolation
passage of the line voltage through zero. The limiter output is is essential, because the common point of the de logic
also applied to the rectifying diodes D7 and D 13 and the circuitry cannot be referenced to a common line in all
external capacitor CEXT that comprise the de power supply. phases.
The power supply provides approximately 6 volts (at In the three-phase circuits described in this Note,
terminal 2) as the de supply to the other stages of the photo-optic techniques (i.e., photo-coupled isolators) are
CA3059. The on/off sensing amplifier (transistors 02 used to provide the electrical isolation of the de logic
through 05) is basically a differential comparator. The triac command signal from the ac circuits and the load. The
gating circuit contains a driver (transistors 08 and 09) for photo-coupled isolators consist of an infrared light-emitting
direct triac triggering. The gating circuit is enabled when all diode aimed at a silicon photo transistor, coupled in a
the inputs are at a high voltage, Le., the line voltage must be common package. The light-emitting diode is the input
approximately zero volts, the sensing-amplifier output must section, and the photo transistor is the output section. The
be "high", the external voltage to terminal I must be a two components provide a voltage isolation typically of 1500
logical" I", and the output of the fail-safe circuit must be volts. Other isolation techniques, such as pulse transformers,
'-high". magnetoresistors, or reed relays, can also be used with some
Fig. 3 shows the position and width of the pulses circuit modifications.
supplied to the gate of a thyristor with respect to the
Resistive Loads
incoming ac line voltage. The CA3059 can supply sufficient
Fig. 4 illustrates the basic phase relationships of a
gate voltage and current to trigger most RC A thyristors at
balanced three-phase resistive load, such as may be used in
ambient temperatures of 250C. However. under worst-case
heater applications, in which the application of load power is
conditions (i.e., at low ambient-temperature extremes and
controlled by zero-voltage switching. The following con-
maximum trigger requirements), selection of the higher-
ditions are inherent in this type of application:
current thyristors may be necessary for particular applica-
1. The phases are 120 degrees apart; consequently, all
tions. (The RCA technical bulletin File No. 406 lists triacs
three phases cannot be switched on simultaneously at
designed for use with the integratedcircuit zero-voltage
zero voltage.
switch as the triggering circuit. Detailed information on the
2. A single phase of a wye configuration type of
operating characteristics and capabilities of this integrated
three-wire system cannot be turned on.
circuit are given in RCA technical bulletin File No. 490, RCA
3. Two phases must be turned on for initial starting of
application note ICAN-6182, and the ReA Linear Integrated
the system. These two phases form a single-phase
Qrcuits Manual, IC-42.)
circuit which is out of phase with both of its
As shown in Fig. I, when terminal 13 is connected to
component phases. The single-phase circuit leads one
terminal 14, the fail-safe circuit of the CA3059 is operable. If
phase by 30 degrees and lags the other phase by 30
the sensor should then be accidentally opened or shorted,
degrees.
power is removed from the load (i.e., the triac is turned off).
These conditions indicate that in order to maintain a
The internal fail-safe circuit functions properly, however,
system in which no appreciable RFI is generated by the
only when the ratio of the sensor impedance at 250C. if a
switching actIOn from initial starting through the steady-state
thermistor is the sensor, to the impedance of the poten-
operating condition, the system must first be turned on, by
tiometer. Rp is less than 4 to I.
zero-voltage switching, as a single-phase circuit and then must
revert to synchronous three-phase operation.
Fig. 5 shows a simplified circuit configuration of a
three-phase heater control that employs zero-voltage
LI NE /'., /'.,
VOLTAGE / \. / \. synchronous switching in the steady-state operating
-+-7 -----V--+--~"J<--~ condition, with random starting. In this system, the logic
command to turn on the system is given when heat is
required, and the command to turn off the system is given
when heat is not required. Time proportioning heat control is
also possible through the use of logic commands.
*Thc de logic circuitry provide" the low-level electrical signal that

dictates the state of the load. For temperature controls, the de logic
Fig. 3- Timing relationship between the output pulses of
circuitry includes a temperature sensor for feedback. The ReA
the CA3059 and the ac line voltage (pulse duration integrated-circuit zero-voltage 'iwitch. when operated in the de mode
shown is a typical value for operation from a with "orne additional circuitry, can replace the de logic circuitry for
720-volt 60Hz line voltage). temperature controls.
TO
3 PHASE
RESISTIVE
lOAD
(DELTA OR WYEI
Fig. 6- Three-phasepower control that employs zero-voltage synchronous switching both

for steady-state operation and for starting.
as start-up is accomplished, the three photo-coupled isolators usually negligible. Also, because of the lagging nature of the
OCI3, OCI4, and OCI5 take control, and three-phase inductive current, the triacs cannot be pulse-fired at zero
synchronization begins_ When the "logic command" is turned voltage. There are several ways in which the CA3059 may be
off, all control is ended. and the triacs automatically turn off interfaced to a triac for inductive-load applications. The most
when the sine-wave current dccreases to zero. Once the first direct approach is to use the CA3059 in the dc mode, i.e_, to
phase turns off. the other two will turn off simultaneously, provide a continuous dc output instead of pulses at points'of
90 later, as a slflgi~pllasc lineto-Iine circuit, as is apparent zero-voltage crossing. This mode of operation is accom-
from Fig. 4. plished by connection of terminal 12 to terminal 7, as shown
in Fig. 7. The output of the CA3059 should also be limited
Inductive Loads to approximately 5 milliamperes in the dc mode by the
For inductive loads, zerovoltage turnon is not generally 750-ohm series resistor. Use of a triac such as the RCA
required because the inductive current cannot increase T230lD is recommended for this application. Terminal 3 is
instantaneously; therefore, the amount of RFI generated is connected to terminal 2 to limit the steady-state power
The three photo-coupled inputs to the three CA3059
circuits change state simultaneously in response to a "logic
command". The CA3059 circuits then provide a positive
pulse, approximately 100 microseconds in duration, only at a
zero-voltage crossing relative to their particular phase. A
RANDOM
START-UP balanced three-phase sensing circuit is set up with the three
POINT
CA3059 circuits each connected to a particular phase on
V2
their common side (terminal 7) and referenced at their high
side (terminalS), through the current-limiting resistors R4,
30"--1 R5, and R6, to an established artificial neutral point. This
artificial neutral point is electrically equivalent to the
inaccessible neutral point of the wye type of three-wire load
and, therefore, is used to establish the desired phase
relationships. The same artificial neutral point is also used to
establish the proper phase relationships for a delta type of
three-wire load. Because only one triac is pulsed on at a time,
the diodes (0 I, 02, and 03) are necessary to trigger the
opposite-polarity triac, and, in this way, to assure initial
latching-on of the system. The three resistors (R I, R2, and
R3) are used for current limiting of the gate drive when the
opposite-polarity triac is triggered "on" by the line voltage.
In critical applications that require suppression of all
generated RFI, the circuit shown in Fig. 6 may be used. In
addition to synchronous steady-state operating conditions.
this circuit also incorporates a zero-voltage starting circuit.
Fig. 4- Voltage phase relationship for a three-phase resis- The start-up condition is zero-voltage synchronized to a
tive load when the application of load power is single-phase, 2-wire, line-to-line circuit, comprised of phases
controlled by zero-voltage switching: (a) voltage A and B. The logic command engages the single-phase
waveforms, (b) load-circuit orientation of voltages. "start-up" CA3059 and three-phase photo-coupled isolators
(The dashed lines indicate the normal relationship OCI3, OCI4, OCI5 through the photo-coupled isolators OCII
of the phases under steady-state conditions. The and OCl2. The single-phase CA3059, which is synchronized
deviation at start-up and turn-off should be noted.) to phases A and B, starts the system at zero voltage. As soon
3 - PHASE
RESISTIVE LOAD
(DELTA OR WYE)
Fig. 5-Simplified diagram of a three-phase heater control that employs zero-voltage synchronous
switching in the steady-state operating conditions.
dissipation within the CA3059. For most three-phase Simplified circuits using pulse transformers and reed
inductive load applications, the current-handling capability relays will also work quite satisfactorily in this type of
of the T230 I D triac (2.5 amperes) is not sufficient. Therefore, application. The RC networks across the three power triacs
the T2301D is used as a trigger triac to turn on any other are used for suppression of the commutating dv/dt when the
currently available power triac that may be used. The trigger circuit operates into inductive loads. (A detailed explanation
triac is used only to provide trigger p.).llses to the gate of the of commutating dv/dt is provided in the basic discussion of
power triac (one pulse per half cycle); the power dissipation thyristors in the ReA Solid-State Power Circuits Designer's
in this device, therefore, will be minimal. Handbook. SP52.)
AppliCatiOn NOte
AN-6096
Solid-State Approaches to
Cooking-Range Control
As a result of decreasing semiconductor costs, advanced ommended. Because of the unusually high ambient tempera-
system-cost analysis by appliance manufactu'ers, and increased tures that can be encountered in various areas of the range,
consumer consciousness, various solid-state range-control de- caution must be used in locating the semiconductors, particu-
signs can be applied to today's market. This Note presents larly the power devices. Areas on the range that allow for the
various solid-state design approaches available to the range- mounting of these devices and/or their heat sinks should' be
control designer. determined by the appliance manufacturer according to tem-
Design and Function Considerations perature profiles of his enclosure.
The primary areas of range control design to be considered Top-Burner Controls
are the various heating elements: the oven, broiler, and top As an introductory method of control, a retrofit approach to
burners. The most popular method of control of these units is the top-burner design where "infinite" control is used is
by switching relays or "infinite-switch"-type heat-sensitive examined. A single-time-constant phase-control circuit is used
switches. Such controls generate radio-frequency interference, on each burner as the infinite control. Fig. I shows the sche-
RFI, and can have limited life with respect to switching cycles matic diagram of the circuit; Fig. 2 shows the various wave-
because of contact failures. In addition, the nest of wiring
usually needed to interconnect the incoming power line and the
various independent loads results in substantial labor costs and
possible substantial in-line reworking of ranges to accommodate
:~~-----+---~.-----~.,----~.,~~ ..
design changes or failures. Calibration of these controls is
generally cumbersome and time consuming because multiple AC
settings are usually involved. However, from the standpoint of

parts cost, the control is acceptable.
Semiconductor costs have been decreasing, and are ap-
proaching electromechanical-component costs; however, to
justify the use of solid-state controls, cost factors other than
actual parts costs must be considered. The reliability and the
ease of handling of solid-state controls add to their dependable
operation and desirability. Dependability can be measured in
TYPICAL VALUES:
fewer in-line design corrections and possibly fewer calibrations, Llf;IOO~H R1=2.2K
and, in turn, lower manufacturing costs. Lower manufacturing elf :0.1 I'F CI =0.1 ~F
PI :250 K
costs coupled with the ease of handling of printed circuit
Fig. 1- Schematic diagram of retrofit-type top-burner control.
boards, which eliminate the nest of wiring, represent a further
over-all system-cost reduction. forms for the circuit. Because each heater-control circuit is
Other advantages of solid-state-control designs are manifest identical, an examination of one, Bj, is suflicient for an under-
in their ability to accept design change or add-on designs to standing of all of the circuits. Potentiometer PI, resistor R j ,
satisfy a customer's desire for improved products. For example, and capacitor C 1 form a 60-Hz voltage divider in which high
the self-cleaning feature is easily incorporated in the various values of resistance for PI limit the peak voltage swing on Cj.
oven controls; this feature is discussed in detail below. The diac, which is a three-layer, p-n-p device, exhibits a high
Before any particular design approaches are discussed, a impedance until a peak voltage of approximately 32 volts is
review of some of the characteristics of the devices used is rec- applied across it. At this time it displays a negative resistance.
cluded in the oven to provide a closed-loop system for accurate
control of the oven temperature. The RCA CA30591 ,2 is used
to accomplish the zero-voltage logic switching; the functional
block diagram for the CA3059 is shown in Fig. 4. *
D
~32 V PK
L:L LJ,...
'(J'" "
Fig. 2- Waveforms for the circuit of Fig. 1.

Therefore, if the potentiometer is set to allow capacitor C I to
charge up to 32 volts peak, the capacitor discharges through
the diac into the gate of the triac and turns the triac on to its
low-impedance state. This action is repeated every half cycle.
Llf and C!fare included to suppress the RFI generated by the Fig. 4- Functional block diagram of CA3059 ;ntegrated-.e;rcuit
zero-voltage switch.
switching wavefront of the triac.
This type of circuit is a retrofit design, but it has several dis- The limiter stage of the CA3059 clips the incoming ac line
advantages. These disadvantages include cost, the need for RFI voltage to approximately 8 volts. This signal is then applied to
fJ.1tering(a substantial part of the total cost), and the need for the zero-voltage-crossing detector, which generates an output
considerable hand wiring, as the bulky discrete components do pulse during each passage of the line voltage through zero. The
not warrant printed-circuit-board mounting. However, infinite- limiter output is also applied to a rectifying diode and an ex-
switch-type control of the burners is accomplished, and the ternal capacitor that comprise the dc power supply. The power
feasibility of solid-state device use in the control design is supply provides approximately 6 volts, as the YCC supply, to
demonstrated. the other stages of the CA3059. The on/off sensing amplifier is
Oven/Broiler Controls basically a differential comparator. The triac gating circuit con-
Fig. I shows that the triac can be used to switch the burner tains a driver for direct triac triggering. The gating circuit is
elements without arcing or contact bounce, but the resulting enabled when all the inputs are at a high voltage; i.e., the line
"clean" waveform, Fig. 2, still has a high-frequency content in voltage must be approximately zero volts, the sensing-amplifier
the AM broadcast band. To suppress this nuisance, a costly output must be high, the external voltage to terminal I must be
RFI filter must be incorporated in the design. The triac can a logical I, and the output of the fail-safe circuit must be high.
still be utilized, however, by using another circuit approach, Fig. 5 shows the circuit diagram of the CA3059. The zero-
zero-voltage switching, ZYS, that can switch the heavy resis- voltage threshold detector consists of diodes D3, D4' D5, and
tive loads with minimized RFI generation. D6, and transistor Q I' The differential amplifier consists of
Zero-voltage switching is demonstrated in the oven control transistor-pairs Q2-Q4 and Q3-Q5' Transistors QI, Q6' Q7'
circuit shown in Fig. 3. In this circuit, a sensor element is in- Q8' and Q9 comprise the triac gating circuit and driver stage.
BROILER Diode D 12, zener-diode D 15, and transistor Q I 0 constitute the
fail-safe circuit. The power supply consists of diodes D7 and
I
L'~:>-----"'~~-0L.JL...J4
D 13 and an external resistor and capacitor connect~d to ter-
minals 5 and 2, respectively, and to ground through pin 7. If
!OOFF A OVEN
transistor pair Q2-Q4 and transistor QI are turned off, an
I output appears at terminal 4. Transistor QI is in the off state if
I
the incoming line voltage is less than approximately the sum of
I
I the voltage drops across three silicon diodes (2.1 volts) for
I either the positive or negative excursion of the line voltage.
p,L Transistor pair Q2-Q4 is off if the voltage across the sensor,
connected from terminals 13 to 7, exceeds the reference voltage
from 9 to 7. If either of these conditions is not satisfied, pulses
are not supplied to terminal 4. Fail-safe operation requires that
terminal 13 be connected to terminal 14. The addition of
Og
:K
R8 "
15
R6 Rg
15K 25
ALL RESISTANCE VALUES ARE IN OHMS
Fig. 5- Schematic diagram of CA3059 zero-voltage switch.
hysteresis and the elimination of half-cycling can be achieved gate current is applied to the triac, and heat is applied to the
by a resistive voltage divider connected from terminals 13 to 8 oven. Conversely, as the desired temperature is reached, the
and from 8 to 7. bias at terminal 13 turns the triac off. The closed-loop feature
As shown in Fig. 3, the temperature of the oven can be ad- then cycles the oven element on and off to maintain the desired
justed by means of PI, which acts, along with the sensor, as a temperature to approximately 20C of the set value. Also, as
voltage divider at terminal 13. The voltage at terminal 13 is has been noted, external resistors between terminals 13 and 8,
compared to the fixed bias at terminal 9 which is set by in- and 7 and 8, can be used to vary this temperature and provide
ternal resistors R4 and RS' When the oven is cold and the re- hysteresis. In Fig. 6, a circuit that provides approximately
sistance of the sensor is high, Q2 and Q4 are off, a pulse of I O-per-cent hysteresis is demonstrated.
NTC RI R2
5 K 12 K 12 K
12 K 68 K 12 ~
lOOK 200K 18 K
In addition to allowing the selection of a hysteresis value, state, the load is energized. When the temperature of the PTC
the flexibility of the control circuit permits incorporation of sensor increases to the desired temperature, the sensor enters
other features. A PTC sensor is readily used by interchanging the high resistance state, the voltage on terminal 2 becomes
terminals 9 and 13 of Fig. 3 and substituting the PTC for the greater than that on terminal 3, and the triac switches the load
NTC sensor. Note that in both cases the sensor element is off. Further cycling depends on the voltage across the sensor.
directly returned to the system ground or common, as is often Hence, very low values of sensor and potentiometer resistance
desired. Terminals 9, 10, and II, Fig. 3, can be connected by can be used in conjunction with the CA3059 power supply
external resistors to provide for a variety of biasing, e.g., to without causing adverse loading effects and impairing system
match a lower-resistance sensor for which the switching point performance.
voltage has been reduced to maintain the same sensor current.
To accommodate the self-cleaning feature, external switch-
ing, which enables both broiler and oven units to be paralleled,
can easily be incorporated in the design. Of course, the poten-
tiometer must be capable of a setting such that the sensor,
which must be characterized for the high, self-clean tempera-
ture, can monitor and establish control of the high-temperature,
self-clean mode. The ease with which this self-clean mode can
be added makes the over-all solid-state system cost-competitive
with electromechanical systems of comparable capability. In
addition, the system incorporates solid-state reliability while
being neater, more easily calibrated, and containing less-costly
system wiring.
Low-Resistance Sensor
The circuit of Fig. 3 performs well with sensor values in the
5- to I O-kilohm range, and is used widely in home comfort con-
trols. Although PTC sensors rated at 5 kilohms are available,
the existing sensors in ovens are usually of a much lower value.
The circuit depicted in Fig. 7 is offered to accommodate these
Proportional Zero-Voltage Switching

Zero-voltage switching control can be extended to appli-
cations in which it is desirable to have constant contrel of the
temperature and a minimization of system hysteresis. A closed-
loop top-burner control in which the temperature of the
cooking utensil is sensed and maintained at a particular value
is a good example of such an application; the circuit for this
control is shown in Fig. 9. In the circuit, a unijunction oscil-
lator is outboarded from the basic control by means of the
internal power supply of the RCA CA3079. The output of this
ramp generator is applied to terminal 9 of the CA3079 and
establishes a varied reference to the differential amplifier.
92CS- 20842
( ----t=<-------<
0--<.....
Fig. 7- Schematic diagram of circuit for use with low-

resistance sensor.
inexpensive metal-wound sensors. A schematic diagram of the

I
nov
60Hz
RCA CA3080, the operational transconductance amplifier used

in Fig. 7, is shown in Fig. 83 With an amplifier bias current,
IABC, of 100 microamperes, a forward transconductance of 2
I
millimhos is achieved in this configuration. The CA3080
switches when the voltage at terminal 2 exceeds the voltage at
terminal 3. This action allows the sink current, Is, to flow from
terminal 13 of the CA3059 (the input impedance to terminal
13 of the CA3059 is approximately 50 kilohms); gate pulses
are no longer applied to the triac because Q2 of the CA3059 is
on. Hence, if the PTC sensor is cold, i.e., in the low resistance
AN-6096 _
hot sensor. For precise temperature regulation, the time base of

the ramp should be shorter than the thermal time constant of Central-Processor
the system but longer than the period of the 60-Hzline. Fig. 10, Since the phase-control top-burner arrangement of Fig. I
which contains various waveforms for the system of Fig. 9, requires excessive handling in construction and does not lend
indicates that a typical variance of O.SoC might be expected itself to printed-circuit-board construction, it is recommended
at the sensor contact to the utensil. Overshoot of the set tem- that a more compact, less expensive, total printed-circuit-board
perature is minimized with this approach, and scorching of approach to the range control be investigated. Further, in order
any type is minimized. to cut system costs, it is recommended that similar circuit
functions be multiplexed or shared as much as possible in one
area in the circuit. A design that meets these requirements is
shown in the block diagram of Fig. I J and the schematic
diagram of Fig. 12. The top burners Ll, L2, L3, and L4
VLOAD
120V
GO-Hz
Now that the feasibility of a solid-state control for the

range has been established, the various approaches can be
joined and a system constructed. The phase-control circuit
could be used for three lOp burners, the proportional control
I- ---,
I
I I
I I
I RI I
2ig I
vI
~o"~ I
I
I 39
R
Jn I
I 2 W I
L_ __ J
(Fig. 12) are all controlled by the single logic bank of COS/MOS CD4015A; the logic diagrams of these devices are shown in
circuitry composed of the RCA CD4013A and the RCA Figs. 13 and 14.
SET 1 6
DI 5
ClOCKl 3
RESET I 4
SET 2 8
D2 9
CLOCK2 II
RESET 2 10
vss
92C5-20838
VDD
16
DATA A IA
CLOCK A 2A
4
STAGE
RESET A 3A
10
4A
15 13
DATA B IB
12
CLOCKa 2B
4
14 STAGE
RES~T B 3B
4B
B
Vss
92CS- 20837
The RCA CD4013A consists of two identical independent independent clock and reset inputs as well as a single serial
data-type flip-flops. Each flip-flop has independent data, set, data input. Q outputs are available from each of the four
reset, and clock inputs and Q and Q outputs. These devices can stages on both registers. All register stages are D-type master-
be used for shift-register applications and, by connecting the Q slave flip-flops. The logic level present at the data input is
output to the data input, for counter and toggle applications. transferred into the first register stage and shifted over one
The logic level present at the D input is transferred to the Q stage at each positive-going clock transition. Resetting of all
output during the positive-going transition of the clock pulse. stages is accomplished by a high level on the reset line. Register
Setting or resetting is independent of the clock and is accom- expansion to eight stages using one CD4015A package, or to
plished by a high level on the set or reset line, respectively. more than eight stages using additional CD40 l5A's, is possible.
The CD4015A consists of two identical independent four- With the CD4015A connected as an eight-stage register and
stage serial-input/parallel-output registers. Each register has the CD4013A used as the reset, the waveforms of Fig. 15
~~E ~ A A A A A A flJ\ A A A f\1j A A A

~LTAGE ~VV Vl) If VIfIJlJVl[\[VVV V\[V
CLOCK A A A A A A A A " A A A A A A A fI
c
result when clocking pulses are applied from the clock stage, a
simple RC diac oscillator (60 Hz). The outputs of the
COS/MOS register are fed to the eight-position rotary-selector
switch for selection of the duty cycle to be applied to the load.
The output of the rotary switch is connected to the drive
triacs through the Darlington-connected triac gate drivers.
These drivers are made up of pairs of transistors from the RCA
CA3082, a seven-transistor, high-current (100 milliamperes),
silicon, n-p-n array. The bases of the input transistors of the
WVDAM
Darlington drivers are all connected to the collector of Q I,
A A AAf\P \[VA
the zero-vol tage sensing transistor, so that triac gate-drive
pulses are applied only when the ac line voltage is approximately
POSITION
b V \[VVIJV 2.1-volts peak. That is, base drive shunted from the Darlington
drivers by Q I causes zero-voltage switching of the triacs and
restricts the average power drain of the dc supply by pulsing
the triac gates. This circuit arrangement results in minimized
RFI. Fig. 16 demonstrates the power waveforms for the circuit
of Fig. 12. Fig. 17 demonstrates the effect of the zero-voltage it controls drops below the SWitching threshold of the Schmitt
sensing transistor, Q I, and the relationship between the various trigger; this drop in voltage removes the gate drive to the oven.
CaS/MaS outputs and the base drive and subsequent gate A PTC sensor could easily be used by inverting the sensor and
drive of the Darlington drivers. By using an additional selector potentiometer. Of course, with proper external switching of
switch, triac, and related gate circuitry (made up of spare tran- the oven elements and the incorporation of a fixed resistor to
sistors in the CA3082) a controllable convenience outlet can be bias the Schmitt trigger to the high temperature of the self-
provided. This outlet can be used for an electric fry-pan, cleaning mode, self-cleaning action can be accommodated by
this system. Care must be taken, particularly with the location
of the power triac for the oven, to afford the best possible
ambient temperature conditions and heat sinking.
Conclusions
With the circuitry of Fig. 12, control of the temperature of
the top burners is provided without the need for calibration of
a sensor element, and the design is well suited for printed-
circuit-board-module use. Extension of the circuit concept
could lead to a future hybrid design incorporating custom chips.
POSITION
h
_r===J COS/MOS OUTPUT
_ The nest of wiring which is now present in ranges is minimized
POSITION _n~n~n~n _ by the use of the printed-circuit board. Zero-voltage switching
h of the power elements results in minimized RFI, while the
single calibration between PI and TH I or an auxiliary cali-
bration potentiometer is the only calibration necessary in the
oven control. These concepts should lead to easier manufacture
with limited in-line failures, because the printed-circuit-board
coffee maker, waffle iron, toaster, etc., and can be controllable
modules could be tested before assembly into the range, and
in the same manner as the top-burner elements.
lower manufacturing costs because of the decreased amount of
An oven control is incorporated in the design by using an
wiring. The history of solid-state dependability should also be
RCA CA3086, an array of five n-p-n transistors with one pair
reflected in the low amount of field failures.
differentially-connected as a Schmitt trigger in closed-loop
configuration. Again, the common de supply of the system is
used in addition to the zero-voltage sensing transistor, Q I. An References
additional Darlington pair available in the CA3082 is used for I. "Application of RCA-CA3058 and RCA-CA3059 Zero-
triac gating. As shown in Fig. 12, an NTC sensor, TH I , forms a Voltage Switches in Thyristor Circuits", by George J.
voltage divider with the potentiometer, Pl. the temperature- Granieri, RCA Application Note ICAN-6158.
selector switch. The input transistor of the Schmitt trigger is a 2. "Applications and Extended Operating Characteristics for
Darlington pair to provide sensitivity. Resistor R8 is chosen to the RCA-CA3059 IC Zero-Voltage Switch", by H. M.
allow for the desired amount of circuit hysteresis. When the Kleinman and A. Sheng, RCA Application Note ICAN-6268.
sensor is cold and has a large resistance, the Darlington input 3. "Applications of the CA3080 and CA3080A High-Perform-
is turned on and causes output transistor Q I to turn off. The ance Operational Transcondu~tance Amplifiers", by H. A.
VCC fed to the zero-voltage sensing transistor and respective Wittlinger, RCA Application Note ICAN-6668.
gate drive switches the oven on. As the desired oven tempera- 4. "Linear Integrated Circuits-Building Blocks for Control
ture is reached, the sensor resistance decreases and the voltage Applications", by George J. Granieri, RCA Reprint ST-6053.
Power Switching Using
Solid-State Relay
Solid-state relays make use of a semiconductor device for control

of ac or de power. Since, in most ac applications, the semiconductor 5 TART ING MATERIAL:
HIGH- RESISTIVITY
element chosen for power control is the triac. this Note describes the n-TYPE SILICON
triac as a power-switching element. Advantages and disadvantages of
the active element over the electro-mechanical relay are discussed in
general terms. Basic parameters. such as surge in-rush capability.
transient-voltage ratings, suppression network, turn-off consideration
and the different modes of triac gating are also discussed. AC power
control is covered by various circuit designs for ON/OFF control.
zero-voltage switching, and line-voltage isolation.
Power switching using electromechanical relays (EMR) is prob-
ably as old as the electrical industry is. The EMR is a controlled de-
vice having either an ON state or an OFF state capable of handling
large amounts of power for a relatively low input power; it has wide- GROW SILICON DIOXIDE
FILM. DI:FINE AND
spread use in power and logic circuits. The relay comes in many D'FFllSE p+ REGIONS,
forms (general purpose, telephone type, TO-S. reed. mercury wetted.
etc.) and has various contact configurations. During the past few
years, the EMR has been challenged by a new breed of relay which
has no moving parts, is capable of handling large amounts of power
for relatively low input power, and that comes in many package and GROW SILICON DIOXIDE
FILM. DEFINE AND
circuit configurations. This new breed has been dubbed the "Solid- DIFFUSl n+ REGIONS.
State Relay" or SSR, and uses transistors for dc power-control or
triacs for ac power control. The SSR is particularly useful in areas
in which increased reliability is required, and in which shock or
mechanical fatigue impose severe limitations on the electromechani-
cal relay. The major limitations to SSR use are economic factors. line DEFINE AND ETCH
isolation, immunity from line transients, and the need for multiple- GATE MOATS AND.
GRIDS.
pole arrangements.
Thyristors (silicon controlled rectifiers and triacs) are semicon-

ductor switches whose bistable state depends upon the regenera-
APPLY AND FIRE HARD
tive feedback associated with a p-n-p-n structure. The SCR is a uni- GLASS PASSIVATING
LAYER.
directional device used primarily for dc and ac functions. whereas the
triac is a bidirectional device used primarily for control of ac power.
The fabrication of a standard, glass-passivated triac requires the
seven basic steps illustrated in Fig. I and delineated below.
OPEN CONTACT AREAS
I. The process begins with an n-type, high-resistivity, silicon AND METALLIZE.
wafer; NICKEL LEAD-TIN
SOLDER. LASER-SCRIBt
2. p layers are diffused deeply into both sides;
AN(l BREAK INTO
3. Silicon-dioxide diffusion masks are grown, and p+ regions are PELLETS.
defined and diffused into the wafer;
4. A second oxide diffusion mask is grown, and n+ regions are
defined and diffused into the wafer:
5. A silicon-dioxide etch mask is grown and defined. Grids and
gate moats are etched into the wafer;
6. A hard glass-passivated layer is applied in the grids and gate Another important parameter associated with a triac is its di/dt
moat; rating, a parameter most significant during turn-on. With the initi-
7. Contact areas are opened on the wafer and nickel-Ieact-tin ation of a gate signal, the active area closest to the gate region is,
solder metallization is applied. The wafer is then laser-scribed essentially, turned on, and, for a few microseconds, the instan-
and separated into pellets. Fig. 2 contains an isometric view of a taneous power dissipation is a function of the rate of rise of the on-
completed triac and dimensions of three devices now available or in state current. This power dissipation may cause localized heating and
the design stage. result in silicon-lattice destruction and triac degradation. The di/dt
ratings are a function of triac geometry and pellet size, and ratings of
100 Alps are easily achieved. In most circuit applications, stray or
actual-load inductance is present, and for the condition of di/dt =
The effects of voltage and temperature are important in thyristors Epk/L, it is easily seen that a few microhenries of inductance are all
because of the regenerative action of these devices, and because they that are required to limit circuit di/dt to within the maximum rating.
When di/dt ratings are exceeded, it is usually because of the RC
snubber network in parallel with the triac. In such networks, stray
inductance is essentially zero, and the magnitude of discharge current
is limited by the snubber resistance. The di/dt in the snubber is not
affected by the inductance added to quell the di/dt caused by the
stray or actual-load inductance: only careful selection of RC-snubber-
network components will eliminate this second source of di/dt and
minimize triac failures.
It is well known that triacs are susceptible to non-gated turn-on

and possible damage as a result of transient voltages. Transients are
generally caused in a triac by the switching of inductive loads on ad-
jacent lines or in proximity to the device. If the transient voltage
gcnerated exceeds the critical rate*of-rise of the off-state voltage
(dv/dt) then a displacement current (i = Cdv/dt) is generated which
causes non-gated turn-on. Non-gatcd turn-on is not destructive if the
energy transfer is within the maximum rating of the device; however,
if the transient voltage does not exceed the off-state dv/dt rating, but
does exceed the maximum voltage rating, then triac breakover
occurs. Whether triac degradation occurs is dependent on whether
the energy transfer is within the bulk silicon or the edge avalance.
Although the transient-voltage problem may seem critical, there
are precautions that can be taken to minimize it. The use of RC
snubbers in parallel with the triac can reduce the rate of imposed
transients. This arrangement is most effective for fast rising, short-
duration line disturbances. For critical applications. the use of a
voltage-clipping device in addition to an RC snubber effectively
suppresses both the rate of rise and magnitude of line-generated
transients.
Another type of transient particularly prevalent in the area of
inductive loads. and often overlooked, is the circuit-induced transient.
are often required to support high voltages under high temperature Consider an inductive load in series with a triac and RC snubber net-
conditions. The imposed voltages create a field at the junction inter- work which also includes a switch for line-voltage interruption. With
face, and the increased temperature releases additional surface ions. thc triac in the off state. a leakage current nows which is a function
Should the field concentrate the additional surface charge and allow of the characteristics of the load, the RC snubber network, and triac
it to migrate into the gate region. non-gated turn-on may occur. Most leakage. If the switch is momentarily opened when the triac is off,
manufacturers realize that the gate region must be terminated for thcn a voltage transient (E = Ldi/dt) is generated which can exceed
high voltage/temperature operation, and a shunt resistance is built the voltage rating of the triac, cause non-gated turn-on and abrupt
into the triac pellet during fabrication. This shunt reduces the im- cnergy transfer: and may result in damage to the triac. Again, the
munity of the triac to non-gated turn-on. Additional reliability can proper selection of RC-network components and voltage-clipping de-
be gained by operating the triac under less severe voltage/temperature vice will suppress the circuit-induced transient to a level compatible
conditions. with the voltage rating of the triac.
One of the features that has made thyristors the work-horses of the
power semiconductor industry is their ability to absorb in-rush cur- The term "turn-off time" is not associated with triacs since triacs
rents many times in excess of their steady-state ratings. This unique arc bidirectional, and reverse voltage is nothing more than a forward
feature results from the regenerative action of the thyristor, an action voltage to one-half of the triac chip. A new term, "critical-rate-of-
which maintains the internal beta at a level such that. under in-rush rise-of-coml1lutation-voltage", is used with triacs. The term describes
conditions, the charge density is equally distributed over the entire the ability of the triac to turn off as the current passes through zero,
triac pellet. The equal charge distribution assures the presentation of or com mutates. One must remember that the triac is a current-de-
a low impedance to the in-rush current. Each manufacturer clearly pendent device: current is injected into the gate to turn the device
rates device surge capability from single cycle to multiple cycles. on, and current must be removed or allowed to pass through zero for
Since this rating cannot be exceeded repeatedly. care should be turn-off regardless of what the source-voltage poLarity is. Commu-
exercised in the actual application to provide a sufficient safety tating dv/dt is less critical with resistive loads and most important
margin between the published ratings and the actual circuit in-rush with inductive loads. Consider an inductive load in which the load
currents. current lags the source voltage by a phase angle O. As pointed out,
triac commutation occurs at zero current, whereas the source voltage power control. A comparison of SSR's with electromechanical relays
has some magnitude E. As the load current crosses the zero point, is given below.
a small reverse current is established as a result of the charge in the Life: An EMR physically makes and breaks load current, and the
n-type region. This charge, plus a displacement current (i = C'dv/dt) relay contacts deteriorate with life.
resulting from the reapplied source voltage, can cause the triac to turn SSR's: They have no moving parts, and may be designed to make
on in the absence of a proper gate signal. A minimum commutating and break at zero current. Regardless of the design, the triac al-
dv/dt at rated current and at a specific operating case temperature ways breaks at zero current.
should be defined in all triac applications; the circuit designer can use
Contact Bounce: Inherent with an EMR - zero for SSR's.
these specifications to choose an RC snubber network that will limit
the reapplied dv/dt to within ratings. Loss of triac control as a result RFI: Inherent with EMR's - dependent on SSR design.
of commutating dv/dt does not degrade the characteristics of the AFI: ("audio-frequency" interference). Terrible with EMR's, par-
triac. Proper RC snubber network selections for worst-case condi- ticularly when many relays are clacking about. Not noticeable
tions of load power factor, current, and voltage are easily made by with SSR's.
use of the charts shown in Fig.3. Environment: High humidity, corrosion, and explosive atmos-
pheres usually dictates a sealed relay. SSR's may easily be polled.
Shock: The SSR is far supelior.
Input Logic: EMR's can be operated from low-level logic. SSR's
are design dependent, but offer complete versatility.
A simple triac control circuit, an ON/OFF circuit, is shown in

Fig.4. With switch S I open, the triac is off and essentially zero cur-
rent is applied to the load. Actually, there will be leakage-current
flow to the load; the amount of current is dependent on the applied
voltage and triac case temperature. However, because the current is
very small (less than one milliampere) compared to'the load current,
it can be neglected in this and the following circuits. (In specific
applications in which leakage current may affect control it would
have to be considered.)
VALUES ON CURVES
ARE IN V/~s I
I
46s1 46Sl0
LOAD CURRENT- A
Ie I 92CS- 21Zl6
10. 10'
220 -VOLT LINE

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s.tz.
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TRIAC VOLTAGE
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SI S2
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. ., . .,
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0.001
, I
,
10
,
'0
LOAD CURR ENT - A To apply power to the load in Fig.4. switch S I is closed to provide
(bl gate drive to the triac. Bias-resistor R I is of the order of 68 to 100
ohms and provides the initial gate drive during every half cycle of
applied voltage. The power consumption of R I is very low 0/4 to
1/2 watt), because, when the triac is in the ON state, R I is in parallel
with the ON-state voltage of approximately 1.5 volts. This method
of triac triggering, calleq anode firing, is an effective way of triggering
because it uses the source voltage as a .source of gate-current drive.
Before the advantages of SSR's are discussed, the types available Maximum gate current is available for triac turn-on at peak line volt-
should be reviewed. age until the device goes to the low-impedance state. In this state
Two types of SSR are available: all solid-state and hybrids. The the current in R I is reduced by the forward voltage drop. In effect,
solid-state class employs solid-state devices for both logic and triac bias resistor R 1 is utilized only during the initial turn-on of the triac,
gating, Hybrids generaHy use a reed relay for triac gating for ac or for approximately two microseconds. In a typical application,
power control and so combine the electromechanical with solid switch S I would be replaced by a relay, and power control would be
state. In either class, the triac is used as the solid-state element for ac transferred by means of low-level-current relay contacts.
For control applications which require that variable power be de- may be used with an ON/OFF-type control or as a proportional con-
livered to a load, an inexpensive RC phase-control circuit is best. trol depending on the degree of regulation required. A simple, inex-
Fig.S shows the basic triac-diac control circuit with the triac con- pensive, ON/OFF temperature controller is shown in Fig.7; a review
nected in series with the load. During the beginning of each half cycle of the functional block diagram of the zero-voltage-switch, Fig.6, will
help in understanding the circuit. For every zero-voltage crossing,
a zero crossing pulse is generated and directed to the triac gating cir-
cuit. If there is a demand for heat, the differential amplifier is in the
open state, the triac gating circuit is open, and the triac is turned on
at every zero-voltage crossing. When the demand for heat is satis-
fied, the differential amplifier is in the closed state; this inhibits the
triac gating circuit and removes any further gate drive to the triac.
Therefore, the key to the operation of this circuit is in the state of
the differential amplifier. One side of the differential amplifier is
biased to a reference voltage VR, and the other side is biased to a
voltage Vs which is dependent on a variable potentiometer setting
and sensing resistor. As a result, whenever the bias voltage VS ex
ceeds the reference voltage VR, the gating circuit is open and the
triac is turned on for each zero-voltage crossing. The charac-
teristics of an ON/OFF controller are well known; i.e., there are sig-
nificant thermal overshoots and undershoots which result in a dif ..
the triac is in the OFF state; as a result. the entire line voltage is im-
pressed across it. Because the triac is in parallel with the potenti-
ometer and capacitor, the voltage across the triac drives the current
through the potentiometer and charges the capacitor. When the
capacitor voltage reaches the breakover voltage of the diac, VSO,
the capacitor discharges through the triac gate and turns it on. The
line voltage is then transferred from the triac to the load for the re-
mainder df that half cycle. This sequence is repeated for every half
cycle of either polarity. If the potentiometer resistance is reduced,
the capacitor charges more rapidly. the VBO of tile diac is reached
earlier in the cycle, and the power applied to the load is increased.
If the potentiometer resistance is increased, triggering occurs later
and load power is reduced. The main disadvantage of this circuit is
that it produces RFI.
Although the basic light-control circuit opcrall'S with the com-

ponent arrangement shown in Fig.5. additional components and
sections are usually added to reducl' hysteresis effects. extend the
effective range of power control. and suppress radio-frequency
interference.
A zero-voltage-switch. Fig.6. synchronized for line-pulse genera-

tion, in combination with a triac. is particularly wdl suited for tem- ferentiJI temperature above and below the reference temperature.
perature-control applications. The zero-voltage-switch/triac circuit The magnitude of the differential temperature is dependent on the
mass of the heater and the time constant of the sensing element.
For precise temperature control, the technique of proportional
control with synchronous switching is introduced. The proportional
control differs from the ON/OFF control in that it allows a specified
percentage of power (duty cycle) to be supplied to the load with a
finite off time that. in turn, allows the heating element to "catch up"
as a result of thermal lag. In effect. this scheme provides "antici-
pator control." Again, the key to circuit operation is in the state of
the differential amplifier.
The design engineer often must provide dcto-ac isolation. Com-

plete isolation can be achieved by reed relays, pulse transformers, 'and
light-activated devices. Selection of anyone of these three ap-
proaches depends on the dc logic design and component economics.
Fig.8 (a) shows a reed relay and transistor drive circuit which is ef-
fective in triac gating, although it does have moving parts. Fig.8 (b)
uses a pulse transformer for isolation, and requires a form of clock
pulse that can be transferred to the triac gate. In some applications,
clock pulses may already be available; therefore the pulse-transformer
approach is economical. This approach requires more components
than that of Fig.8 (a), but it has no moving parts. The last approach,
and, at present, probably the most expensive one, uses a light- ations, but most of all the advantages, of triacs, will have at his dis-
activated device, such as the GaAs infrared (lR) emitter, to initiate posal a device that he can use to design power controllers that operate
triac gating. The light-activated device is coupled to a photosensitive satisfactorily not only in normal applications, but also in severe
transistor which, when turned on, provides inhibit logic for addi- physical and electrical environments. The triac has already proven
tional integrated circuits or, as in Fig. 8 (c), for a zero-voltage- to be a true power-semiconductor device, and is widely used in both
switch application. commercial and industrial applications; restrictions on triac use in
military applications, particularly in 400-Hz power systems, are
gradually being lifted. It is inevitable, then, that the triac will evolve
This paper has illuminated some of those areas most misunder-
as the basic building block for ac power control in power-controller
stood or considered as problem areas in the application of triacs. The
systems.
designer who thoroughly understands the characteristics and limit-
REED
SWITCH
(
+~\- II
"
OOC05LlD Linear Integrated Circuits
Solid State
Division
Features and Applications of

RCA Integrated-Circuit Zero-Voltage Switches
(CA3058, CA3059, and CA3079)
RCA-CA3058, CA3059 and CA3079 zero-voltage switches on-off sensing amplifier (differential comparator), and a
are monolithic integrated circuits designed primarily for use as Darlington output driver (thyristor gating circuit) to provide
trigger circuits for thyristors in many highly diverse ac the basic switching action. The dc operating voltages for these
power-control and power-switching applications. These stages is provided by an internal power supply that has
integrated-circuit switches operate from an ac input voltage of sufficient current capability to drive external circuit elements,
24, 120,208 to 230, or 277 volts at 50,60, or 400 Hz. such as transistors and other integrated circuits. An important
The CA3059 and CA3079 are supplied in a 14terminal feature of the zero-voltage switches is that the output trigger
dual-in-line plastic package. The CA3058 is supplied in a pulses can be applied directly to the gate of a triac or a silicon
14-terminal dual-in-line ceramic package. The electrical and controlled rectifier (SCR). The CA3058 and CA3059 also
physical characteristics of each type are detailed in RCA Data feature an interlock (protection) circuit that inhibits the
Bulletin File No. 490. application of these pulses to the thyristor in the event that
RCA zero-voltage switches (ZVS) are particularly well the external sensor should be inadvertently opened or shorted.
suited for use as thyristor trigger circuits. These switches An external inhibit connection (terminal No. I) is also
trigger the thyristors at zero-voltage points in the available so that an external signal can be used to inhibit the
supply-voltage cycle. Consequently, transient load-current output drive. This feature is not included in the CA3079;
surges and radio-frequency interference (RFI) are substantially otherwise, the three integratedcircuit zero-voltage switches are
reduced. In addition, use of the zero-voltage switches also electrically identical.
reduces the rate of change of on-state current (di/dt) in the Over-all Circuit Operation
thyristor being triggered, an important consideration in the Fig. I shows the functional interrelation of the zero-voltage
operation of thyristors. These switches can be adapted for use switch, the external sensor, th~ thyristor being triggered, and
in a variety of control functions by use of an internal the load elements in an on-off type of ac power-control
differential comparator to detect the difference between two system. As shown, each of the zero-voltage switches
externally developed voltages. In addition, the availability of incorporates four functional blocks as follows:
numerous terminal connections to internal circuit points (I) Limiter-Power Supply - Permits operation directly
greatly increases circuit flexibility and further expands the from an ac line.
types of ac power-control applications to which these (2) Differential On/Off Sensing Amplifier - Tests the
integrated circuits may be adapted. The excellent versatility of condition of external sensors or command signals. Hysteresis
the zero-voltage switches is demonstrated by the fact that or proportional-control capability may easily be implemented
these circuits have been used to prOVide transient-free in this section.
temperature control in self-cleaning ovens, to control (3) Zero-Crossing Detector - Synchronizes the output
gun.muzzle temperature in low-temperature environments, to pulses of the circuit at the time when the ac cycle is at a
prOVide sequential switching of heating elements in warm-air zero-voltage point and thereby eliminates radio-frequency
furnaces, to switch traffic signal lights at street intersections, inteference (RFI) when used with resistive loads.
and to effect other widely different ac powercontrol (4) Triac Gating Circuit - Provides high-current pulses to
functions. the gate of the power-controlling thyristor.
In addition, the CA3058 and CA3059 prOVide the following
important aUXiliary functions (shown in Fig. I):
RCA zero-voltage switches are multistage circuits that (I) A built-in protection circuit that may be actuated to
employ a diode limiter, a zero-crossing (threshold) detector, an remove drive from the triac if the sensor opens or shorts.
overriding the action of the zero-crossing detector. 1hIS
override is accomplished by connecting terminal 12 to
terminal 7. Gate current to the thyristor is continuous when
terminal 13 is positive with respect to terminal 9.
Fig. 2 shows the detailed circuit diagram for the
integrated-circuit zero-voltage switches. (The diagrams shown
in Figs. I and 2 are representative of all three RCA
zero-voltage switches, i.e., the CA3058, CA3059, and CA3079;
the shaded areas indicate the circuitry that is not included in
the CA3079.)
The limiter stage of the zero-voltage switch clips the
incoming ac line voltage to approximately 8 volts. This signal
is then applied to the zero-voltage-cro-ssing detector, which
AC Input Voltag:' Input Series Dissipation Rating generates an output pulse each time the line voltage passes
(50/60 or 400 Hzl Resistor (RS) for RS through zero. The limiter output is also applied to a rectifying
V AC krl W diode and an external capacitor, CF, that comprise the dc
power supply. The power supply prOVides approximately
24 2 0.5 6 volts as the VCC supply to the other stages of the
120 10 2 zero-voltage switch. The on-off sensing amplifier is basically a
208/230 20 4 differential comparator. The thyristor gating circuit contains a
277 25 5 driver for direct triac triggering. The gating circuit is enabled
when all the inputs are at a "high" voltage, i.e., the line voltage
must be approximately zero volts, the sensing-amplifier output
must be "high," the external voltage to terminal J must be a
logical "0", and, for the CA3058 and CA3059, the output of
the fail-safe circuit must be "high." Under these conditions,
the thyristor (triac or SCR) is triggered when the line voltage is
essentially zero volts.
Ie" I FOR DC MODE

OR400-Hz
r----'R;"""- : OPERATION
I 'K i
L 2 ,
I --------- --
I 07 PI3
I
I 0,
I
I
I 0,
I
I
I
I
I
I
I
I,
I ReA (A3059
L __ I~EGRAT!D~C~T _
ALL RESISTANCE VALUES ARE IN OHMS f AII~p~~fE
NOTE: CIRCUITRY,WITHIN SHADED AREAS,NOT INCLUDED IN CA3079
Ale: INTERNAL CONNECTION -- 00 NOT USE {TERMINAL

RESTRICTION APPLIES ONLY TO CA3079J
Thyristor Triggering Circuits shown in Fig. I, therefore, the output is a narrow pulse which
The diodes 0 I and 02 in Fig. 2 form a symmetrical clamp is approximately centered about the zero-voltage time in the
that limits the voltages on the chip to 8 volts; the diodes 07 cycle, as shown in Fig. 3. In some applications, however,
and 013 form a half-wave rectifier that develops a positive
voltage on the external storage capacitor, CF.
The output pulses used to trigger the power-switching
thyristor are actually developed by the zero-crossing detector
and the thyristor gating circuit. The zero-crossing detector
consists of diodes 03 through 06, transistor Q I, and the
associated resistors shown in Fig. 2. Transistors QI and Q6
through Q9 and the associated resistors comprise the thyristor
gating circuit and output driver. These circuits generate the
output pulses when the ac input is at a zero-voltage point so
that RFI is virtually eliminated when the zero-voltage switch
and thyristor are used with resistive loads.
particularly those that use either slightly inductive or
The operation of the zero-crossing detector and thyristor
low-power loads, the thyristor load current does not reach the
gating circuit can be explained more easily if the on state (i.e.,
the operating state in which current is being delivered to the latching-current value* by the end of this pulse. An external
thyristor gate through terminal 4) is considered as the capacitor Cx connected between terminal 5 and 7, as shown in
operating condition of the gating circuit. Other circuit Fig. 4, can be used to delay the pulse to accommodate such
elements in the zero-voltage switch inhibit the gating circuit loads. The amount of pulse stretching and delay is shown in
unless certain conditions are met, as explained later. Figs. 5(a) and 5(b).
In the on state of the thyristor gating circuit, transistors Qs
and Q9 are conducting, transistor Q7 is off, and transistor Q6
is on. Any action that turns on transistor Q7 removes the drive
from transistor Qs and thereby turns off the thyristor.
Transistor Q7 may be turned on directly by application of a
minimum of 1.2 volts at 10 microamperes to the
external-inhibit input, terminal I. (If a voltage of more than
1.5 volts is available, an external resistance must be added in
series with terminal I to limit the current to I milliampere.)
Diode 010 isolates the base of transistor Q7 from other signals
when an external-inhibit signal is applied so that this signal is
the highest priority command for normal operation. (Although
grounding of terminal6 creates a higher-priority inhibit
function, this level is not compatible with normal OTL or TTL
logic levels.) Transistor Q7 may also be activated by turning
off transistor Q6 to allow current flow from the power supply
through resistor R7 and diode 010 into the base of Q7
Transistor Q6 is normally maintained in conduction by current
that flows into its base through resistor R2 and diodes Os and Continuous gate current can be obtained if terminal 12 is
09 when transistor Q I is off. connected to terminal 7 to disable the zero-crossing detector.
Transistor Q I is a portion of the zero-crossing detector. In this mode, transistor Q 1 is always off. This mode of
When the voltage at terminal 5 is greater than +3 volts, current operation is useful when comparator operation is desired or
can flow through resistor R I, diode 06, the base-to-emitter when inductive loads must be switched. (If the capacitance in
junction of transistor QI, and diode 04 to terminal 7 to turn the load circuit is low, most RFI is eliminated.) Care must be
on QI. This action inhibits the delivery of a gate-drive output taken to avoid overloading of the internal power supply in this
signal at terminal 4. For negative voltages at terminal 5 that mode. A sensitive-gate thyristor should be used, anda resistor
have magnitudes greater than 3 volts, the current flows should be placed between terminal 4 and the gate of the
through diode Os, the emitter-to-base junction of transistor thyristor to limit the current, as pointed out later under
QI, diode 03, and resistor R1, and again turns on transistor Special Application Considerations.
QI. Transistor QI is off only when the voltage at terminal 5 is Fig. 6 indicates the timing relationship between the line
less than the threshold voltage of approximately 2 volts. voltage and the zero-voltage- switch output pulses. At 60 Hz,
When the integrated-circuit zero-voltage switch is connected as the pulse is typically lOa microseconds wide; at 400 Hz, the
pulse width is typically 12 microseconds. In the basic circuit
The latching cunent is the minimum current required to sustain shown, when the de logic signal is "high", the output is
conduction immediately after the thyristor is switched from the off
disabled; when it is "low", the gate pulses are enabled.
to the on state and the gate signal is removed.
120 V RMS, 60-Hz OPERATION
In the circuit shown in Fig. I, the voltage at terminal 9 is
derived from the supply by connection of terminals 10 and II
..
300
I
I
to form a precision voltage divider. This divider forms one side
of a transducer bridge, and the potentiometer Rp and the
z negative-tern perature-coefficient (NTC) sensor form the other
o Ip
(POSI"'~E d'l/d,l
-- -
side. At low temperatures, the high resistance of the sensor
S200 /" causes terminal 13 to be positive with respect to terminal 9 so
w
'"
-'
/ ....-
I'N(NEG~""'E d~/d'~
that the thyristor fires on every half-cycle, and power is
applied to the load. As the temperature increases, the sensor
"
0-
W
~ 100
V resistance decreases until a balance is reached, and V 13
approaches V 9. At this point, the transistor pair Q2 -Q4 turns
~ on and inhibits any further pulses. The controlled temperature
f' is adjusted by variation of the value of the potentiometer Rp.
For cooling service, either the positions of Rp and the sensor
001 0.02 0.03 004 005 006 007 008 009
EXTERNAL CAPACITANCE -IF
may be reversed or terminals 9 and 13 may be interchanged.
(a)
LINEA-T-f\
V': \
IIOLTAGf~:
I I I I
I I I
I I I
I 1 I I
Fig. ,5 - Curves showing effect of external capacitance on (a) the total :.' : : :
,
output-pulse duration, and (b) the time from zero crossing to " ,
the end of the pulse.
: : ' :
On-Off Sensing Amplifier
The discussion thus far has considered only cases in which
rn
pulses are present all the time or not at all. The differential
sense amplifier consisting of transistors Q2, Q3, Q4, and Qs
(shown in Fig. 2) makes the zero-voltage switch a flexible
power-control circuit. The transistor pairs Q2-Q4 and Q3-QS
form a high-beta composite p-n-p transistors in which the
emitters of transistors Q4 and Qs act as the collectors of the
composite devices. These two composite transistors are
connected as a differential amplifier with resistor R3 acting as
a constant-current source. The relative current flow in the two
"collectors" is a function of the difference in voltage between The low bias current of the sensing amplifier permits
the bases of transistors Q2 and Q3. Therefore, when operation with sensor impedances of up to 0.1 megohm at
terminal 13 is more positive than terminal 9, little or no balance without introduction of substantial error (i.e., greater
current flows in the "collector" of the transistor pair Q2-Q4. than 5 per cent). The error may be reduced if the internal
When terminal 13 is negative with respect to terminal 9, most bridge elements, resistors ~ and RS, are not used, but are
of the current flows through that path, and none in terminal 8. replaced with resistances which equal the sensor impedance.
When current flows in the transistor pair Q2-Q4, the path is The minimum value of sensor impedance is restricted by the
from the supply through R3, through the transistor pair currellt drain on the internal power supply. Operation of the
Q2 -Q4, through the base-emitter junction of transistor QI , and zero-voltage switch with low-impedance sensors is discussed
finally through the diode D4 to terminal 7. Therefore, when later under Special Application Considerations. The voltage
VI3 is equal to or more negative than V9, transistor QI is on, applied to terminal 13 must be greater than 1.8 volts at all
and the output is inhibited. times to assure proper operation.
Protection Circuit
A special feature of the CA3058 and CA3059 zero-voltage
switches is the inclusion of an interlock type of circuit. This
circuit removes power from the load by interrupting the
thyristor gate drive if the sensor either shorts or opens.
However, use of this circuit places certain constraints upon the
user. Specifically, effective protection-circuit operation is
dependent upon the following conditions:
(I) The circuit configuration of Fig. I is used, with an
internal supply, no external load on the supply, and
terminal 14 connected to terminal 13.
(2) The value of potentiometer Rp and of the sensor
resistance must be between 2000 ohms and 0.1 megohm.
(3) The ratio of sensor resistance and Rp must be greater
than 0.33 and less than 3.0 for all normal conditions. (If either
of these ratios is not met with an unmodified sensor, a series
resistor or a shunt resistor must be added to avoid undesired
activation of the circuit.)
The protective feature may be applied to other systems
when operation of the circuit is understood. The protection
circuit consists of diodes D 12 and D 15 and transistor Q 1o
Diode D12 activates the protection circuit if the sensor shown Operating-Power Options
in Fig. I shorts or its resistance drops too low in value, as Power to the zero-voltage switch may be derived directly
follows: Transistor Q6 is on during an output pulse so that the from the ac line, as shown in Fig. I, or from an external dc
junction of diodes Ds and D 12 is 3 diode drops power supply connected between terminals 2 and 7, as shown
(approximately 2 volts) above terminal 7. As long as V14 is in Fig. 8. When the zero-voltage switch is operated directly
more positive or only 0.15 volt negative with respect to that from the ac line, a dropping resistor RS of 5,000 to
point, diode D12 does not conduct, and the circuit operates 10,000 ohms must be connected in series with terminal 5 to
normally. If the voltage at terminal 14 drops to I volt, the limit the current in the switch circuit. The optimum value for
anode of diode DS can have a potential of only 1.6 to this resistor is a function of the average current drawn from
1.7 volts, and current does not flow through diodes DS and D9 the internal dc power supply, either by external circuit
and transistor Q6' The thyristor then turns off. elements or by the thyristor trigger circuits, as shown in Fig. 9.
The chart shown in Fig. I indicates the value and dissipation
The actual threshold is approximately 1.2 volts at room rating of the resistor RS for ac line voltages of 24, 120,208 to
temperature, but decreases 4 millivolts per degree C at higher 230, and 277 volts.
temperatures. As the sensor resistance increases, the voltage at
terminal 14 rises toward the supply voltage. At a voltage of
approXimately 6 volts, the zener diode D 15 breaks down and
turns on transistor Q 10, which then turns off transistor Q6
and the thyristor. If the supply voltage is not at least 0.2 volt
more positive than the breakdown voltage of diode D 15,
activation of the protection circuit is not possible. For this
reason, loading the internal supply may cause this circuit to
malfunction, as may selection of the wrong external supply
voltage. Fig. 7 shows a gUide for the proper operation of the
protection circuit when an external supply is used with a
typical integrated-circuit zero-voltage switch.
SPECIAL APPLICATION CONSIDERATIONS

As pointed out previously, the RCA integrated-circuit
zero-voltage switches (CA3058, CA3059, and CA3079) are
exceptionally versatile units that can be adapted for use in a
wide-variety of power-control applications. Full advantage of
this versatility can be realized, however, only if the user has a
basic understanding of several fundamental considerations that
apply to certain types of applications of the zero-voltage
switches.
around the differential amplifier. Fig. II illustrates this
> 6
I technique. The tabular data in the figure lists the
recommended values of resistors R I and Rz for different
~ 5.5
g sensor impedances at the control point.
~
~ 5
~
g 4.5
Half-Cycling Effect
The method by which the zero-voltage switch senses the THERMISTOR _ NTC R. R z
zero crossing of the ac power results in a half-cycling 51( 12K 12K
phenomenon at the control point. Fig. 10 illustrates this " ,

phenomenon. The zero-voltage switch senses the zero-voltage
crossing every half-cycle, and an output, for example pulse
No.4, is produced to indicate the zero crossing. During the
remaining 8.3 milliseconds, however, the differential amplifier
If a significant amount (greater than IO%) of controlled
in the zero-voltage switch may change state and inhibit any
hysteresis is required, then the circuit shown in Fig. 12 may be
further output pulses. The uncertainity region of the
employed. In this configuration, external transistor QI can be
differential amplifier, therefore, prevents pulse No.5 from
used to prOVidean auxiliary limed-delay function.
triggering the triac during the negative excursion of the ac line
voltage.
--la.3m,!..
~ {~I-ms,-J
I I
,
I , 120 \lAC
c
601'11
2
1
T[Mf
s"
T""'o'
.rc
T..,C"",,,STOR:f/
When a sensor with low sensitivity is used in the circuit, the

zero-voltage switch is very likely to operate in the linear mode.
In this mode, the output trigger current may be sufficient to
trigger the triac on the positive-going cycle, but insufficient to
trigger the device on the negative-going cycle of the triac
supply voltage. This effect introduces a half-cycling For applications that require complete elimination of
phenomenon, i.e., the triac is turned on during the positive half-cycling without the addition of hysteresis, the circuit
half-cycle and turned off during the negative half-cycle. shown in Fig. 13 may be employed. This circuit uses a
CA3099E integrated-circuit programmable comparator with a
SENSITIVITY: CIRCUIT CHANGES STATE WHEN THERE
IS A CHANGE OF~ In zero-volta~e switch. A block dia~ram of CA3099E is shown in
IN A 5Kn SENSOR
Fig. 14. Because the CA3099E contains an integral flip-flop,
its output will be in either a "0" or "I" state. Consequently
the zero-voltage switch cannot operate in the linear mode, and
spurious half-cycling operation is prevented. When the
signal-input voltage at terminal 14 of the CA3099E is equal to
or less than the "low" reference voltage (LR), current flows
from the power supply through resistor R 1, and a logic "0" is
applied to terminal 13 of the zero-voltage switch. This
condition turns off the triac. The triac remains off until the
signal-input voltage rises to or exceeds the "high" reference
voltage (HR), thereby effecting a change in the state of the
flip-flop so that a logic "I" is applied to terminal 13 of the
zero-voltage switch, and triggers the triac on.
"Proportional Control" Systems

The on-off nature of the control shown in Fig. I causes
some overshoot that leads to a definite steady-state error. The
addition of hysteresis adds further to this error factor.
However, the connections shown in Fig. 15(a) can be used to
add proportional control to the system. In this circuit, the
sense amplifier is connected as a free-running multivibrator. At
balance, the voltage at terminal 13 is much less than the
voltage at terminal 9. The output will be inhibited at all times
until the voltage at terminal 13 rises to the design differential
voltage between terminals 13 and 9; then proportional control
resumes. The voltage at terminal 13 is as shown in Fig. 15(b).
When this voltage is more positive than the threshold, power is
POSITIVE INTERNAL
SUPPLY VOLTAGE
FOR BIAS
i ....
5~us~~~
SYSTEM (Vb I (ISlAS)
9
OUTPUT
CURRENT
CONTROL
7
3
I SINK"
I OUTPUT
L __ C~A~
L -----J I
__ ~
5 6
UNREGULATED REGULATED V-
INPUT OUTPUT
As in the case of the hysteresis circuitry described earlier,
some special applications may require more sophisticated
systems to achieve either very precise regions of control or
very long periods.
Zero-voltage switching control can be extended to
applications in which it is desirable to have constant control of
the temperature and a minimization of system hysteresis. A
closed-loop top-burner control in which the temperature of
the cooking utensil is sensed and maintained at a particular
value is a good example of such an application; the circuit for
this control is shown in Fig. 17. In this circuit, a unijunction
oscillator is outboarded from the basic control by means of

Fig. 15 - Use of the CA3058 or CA3059 in a typical heating control
with proportional control: fa) schematic diagram, and
the internal power supply of the zero-voltage switch. The
fb) waveform of voltage at terminal 13. output of this ramp generator is applied to terminal 9 of the
zero-voltage switch and establishes a varied reference to the
applied to the load so that the duty cycle is approximately 50 differential amplifier. Therefore, gate pulses are applied to the
per cent. With a 0.1 megohm sensor and values of Rp = triac whenever the voltage at terminal 13 is greater than the
0.1 megohm, R2 = 10,000 ohms, and CEXT = 10 microfarads, voltage at terminal 9. A varying duty cycle is established in
a period greater than 3 seconds is achieved. This period should which the load is predominantly on with a cold sensor and
be much shorter than the thermal time constant of the system. predominantly off with a hot sensor. For precise temperature
A change in the value of any of these elemen ts changes the regulation, the time base of the ramp should be shorter than
period, as shown in Fig. 16. As the resistance of the sensor the thermal time constant of the system but longer than the
changes, the voltage on terminal 13 moves relative to V9. A period of the 60-Hz line. Fig. 18, which contains various
cooling sensor moves V 13 in a positive direction. The triac is waveforms for the system of Fig. 17, indicates that a typical
on for a larger portion of the pulse cycle and increases the variance of O.SoC might be expected at the sensor contact to
average power to the load. the utensil. Overshoot of the set temperature is minimized
with this approach, and scorching of any type is minimized.
VLOAD
I~OV
GO-Hz
';.":."-
Effect of Thyristor Load Characteristics sensing amplifier. Although the RFI-eliminating function of
The zero-voltage switch is designed primarily to gate a the zero-voltage switch is inhibited when the zero-crossing
thyristor that switches a resistive load. Because the output detector is disabled, there is no problem if the load is highly
pulse supplied by the switch is of short duration, the latching inductive because the current in the load cannot change
current of the triac becomes a significant factor in determining abruptly.
whether other types of loads can be switched. (The Circuits that use a sensitive-gate triac to shift the firing
latching-current value determines whether the triac will remain point of the power triac by approximately 90 degrees have
in conduction after the gate pulse is removed.) Provisions are been designed. If the primary load is inductive, this phase shift
included in the zero-voltage switch to accommodate inductive corresponds to firing at zero current in the load. However,
loads and low-power loads. For example, for loads that are less changes in the power factor of the load or tolerances of
than approximately 4 amperes rms or that are slightly components will cause errors in this firing time.
inductive, it is possible to retard the output pulse with respect The circuit shown in Fig. 19 uses a CA3086
to the zero-voltage crossing by insertion of the capacitor Cx integrated-circuit transistor array to detect the absence of load
from terminal 5 to terminal 7. The insertion of capacitor Cx current by sensing the voltage across the triac. The internal
permits switching of triac loads that have a slight inductive zero-crossing detector is disabled by connection of terminal 12
component and that are greater than approximately 200 watts to terminal 7, and control of the output is made through the
(for operation from an ac line voltage of 120 volts rms). external inhibit input, terminal I. The circuit permits an
However, for loads less than 200 watts (for example, output only when the voltage at point A exceeds two VBE
70 watts), it is recommended that the user employ the drops, or 1.3 volts. When A is positive, transistors Q3 and Q4
T2300B* sensitive-gate triac with the zero-voltage switch conduct and reduce the voltage at terminal I below the inhibit
because of the low latching-current requirement of this triac. state. When A is negative, transistors Q t and Q2 conduct.
For loads that have a low power factor, such as a solenoid When the voltage at point A is less than 1.3 volts, neither of
valve, the user may operate the zero-voltage switch in the dc the transistor pairs conducts; terminal I is then pulled positive
mode. In this mode, terminal 12 is connected to terminal 7, by the current in resistor R3, and the output in inhibited.
and the zero-crossing detector is inhibited. Whether a "high"
or "low" voltage is produced at terminal 4 is then dependent
only upon the state of the differential comparator within the
integrated-circuit zero-voltage switch, and not upon the zero
crossing of the incoming line voltage. Of course, in this mode
of operation, the zero-voltage switch no longer operates as a
zero-voltage switch. However, for many applications that
involve the switching of low-current inductive loads, the
amount of RFI generated can frequently be tolerated.
For switching of high-current inductive loads, which must
be turned on at zero line current, the triggering technique
employed in the dual-output over-under temperature
controller and the transient-free switch controller described
subsequently in this Note is recommended.
Switching of Inductive Loads
For proper driving of a thyristor in full-cycle operation,
gate drive must be applied soon after the voltage across the
device reverses. When resistive loads are used, this reversal
occurs as the line voltage reverses. With loads of other power
factors, however, it occurs as the current through the load
becomes zero and reverses.
There are several methods for sWitching an inductive load at
the proper time. If the power factor of the load is high (i.e., if
the load is only slightly inductive), the pulse may be delayed
by addition of a suitable capacitor between terminals 5 and 7,
as described previously. For highly inductive loads, however,
this method is not suitable, and different techniques must be
used.
If gate current is continuous, the triac automatically
commutates because drive is always present .vhen the voltage The circuit shown in Fig. 19 forms a pulse of gate current
reverses. This mode is established by connection of terminals 7 and can supply high peak drive to power traics with low
and 12. The zero-crossing detector is then disabled so that average current drain on the internal supply. The gate pulse
current is supplied to the triac gate whenever called for by the will always last just long enough to latch the thyristor so that
disabled and initial turn-on occurs at random. Provision of Negative Gate Current
The gate pulse forms because the voltage at point A when Triacs trigger with optimum sensitivity when the polarity of
the thyristor is on is less than l.3 volts: therefore, the output the gate voltage and the voltage at the main terminal 2 are
of the zero-voltage switch is inhibited, as described above. The similar (1+ and n- modes). Sensitivity is degraded when the
resistor divider R) and Rz should be selected to assure this polarities are opposite (1- and JII+ modes). Although RCA
condition. When the triac is on, the voltage at point A is triacs are designed and specified to have the same sensitivity in
approximately one-third of the instantaneous on-state voltage both rand 111+ modes, some other types have very poor
(vr) of the thyristor. For most RCA thyristors, vr (max) is sensitivity in the JII+ condition. Because the zero-voltage
less than 2 volts, and the divider shown is a conservative one. switch supplies positive gate pulses, it may not directly drive
When the load current passes through zero, the triac some higher-current triacs of these other types.
commutates and turns off. Because the circuit is still being The circuit shown in Fig.20(a) uses the negative-going
driven by the line voltage, the current in the load attempts to voltage at terminal 3 of the zero-voltage switch to supply a
reverse, and voltage increases rapidly across the "turned-off' negative gate pulse through a capacitor. The curve in
triac. When this voltage exceeds 4 volts, one portion of the Fig. 20(b) shows the approximate peak gate current as a
CA3086 conducts and removes the inhibit signal to permit function of gate voltage VG. Pulse width is approximately
application of gate drive. Turning the triac on causes the 80 microseconds.
Operation with Low-I mpedance Sensors
Although the zero-voltage switch can operate satisfactorily
with a wide range of sensors, sensitivity is reduced when
sensors with impedances greater than 20,000 ohms are used.
Typical sensitivity is one per cent for a SOOO-ohmsensor and
increases to three per cent for a O.l-megohm sensor.
Low-impedance sensors present a different problem. The
sensor bridge is connected across the internal power supply
and causes a current drain. A SOOO-ohm sensor with its
associated SOOO-ohm series resistor draws less than
I milliampere. On the other hand, a 300-ohm sensor draws a
current of 8 to 10 milliampers from the power supply.
Fig. 21 shows the 600-ohm load line of a 300-ohm sensor
on a redrawn power-supply regulation curve for the
zero-voltage switch. When a I O,OOO-ohmseries resistor is used,
the voltage across the circuit is less than 3 volts and both
sensitivity and output current are significantly reduced. When
a SOOO-ohmseries resistor is used, the supply voltage is nearly
S volts, and operation is approximately normal. For more
consistent operation, however, a 4000-ohm series resistor is
recommended.
Fig. 20 - Use of rhe CA3058 or CA3059 to provide negative gate Fig. 21 - Powersupply regulation of the CA3058 or CA3059 with a
pulses: (a) schematic diagram; (b) peak gate current (at 300-ohm sensor (600-ohm load) for two values of series
terminal 3) as a function of gate voltage. resistor.
Although positive-temperature-coefficient (PTC) sensors Further cycling depends on the voltage across the sensor.
rated at 5 kilohms are available, the existing sensors in ovens Hence, very low values of sensor and potentiometer resistance
are usually of a much lower value. The circuit shown in Fig. 22 can be used in conjunction with the zero-voltage switch power
is offered to accommodate these inexpensive metal-wound supply without causing adverse loading effects and impairing
system performance.
Interfacing Techniques
Fig. 24 shows a system diagram that illustrates the role of
the zero-voltage switch and thyristor as an interface between
the logic circuitry and the load. There are several basic
lOADS
AND
MECHANISMS
~ MOTORS
--+-
SOLENOIDS
IJlII
~HEATERS
~ LAMPS
SENSORS
II
sensors. A schematic diagram of the RCA CA3080 o---@--
PHOTO-CELLS
integrated-circuit operational transconductance amplifier used
in Fig. 22, is shown in Fig. 23. With an amplifier bias current, ~
----
PTCI NTC
, THERMISTORS
IABe, of 100 microamperes, a forward transconductance of
LIMIT SWITCHES
2 milliohms is achieved in this configuration. The CA3080
switches when the voltage at terminal 2 exceeds the voltage at
terminal 3. This action allows the sink current, Is, to flow
from terminal 13 of the zero-voltage switch (the input
impedance to terminal 13 of the zero-voltage switch is
approximately 50 kilohms); gate pulses are no longer applied interfacing techniques. Fig.25(a) shows the direct input
to the triac because Q2 of the zero-voltage switch is on. Hence, technique. When the logic output transistor is switched from
if the PTC sensor is cold, i.e., in the low resistance state, the the on state (saturated) to the off state, the load will be
load is energized. When the temperature of the PTC sensor turned on at the next zero-voltage crossing by means of the
increases to the desired temperature, the sensor enters the high interfacing zero-voltage switch and the triac. When the logic
resistance state, the voltage on terminal 2 becomes greater output transistor is switched back to the on state,
than that on terminal 3, and the triac switches the load off. zero-crossing pulses from the zero-voltage switch to the triac
gate will immediately cease. Therefore, the load will be turned off to on. The light sensor is connected to the differential
off when the triac commutates off as the sine-wave load amplifier input of the zero-voltage switch, which senses the
current goes through zero. In this manner, both the turn-on change of impedance at a threshold level and switches the load
and turn-off conditions for the load are controlled. on as in Fig. 25(a).
When electrical isolation between the logic circuit and the Sensor Isolation
load is necessary, the isolated-input technique shown in In many applications, electrical isolation of the sensor from
Fig. 25(b) is used. In the technique shown, optical coupling is the ac input line is desirable. Two common isolation
used to achieve the necessary isolation. The logic output techniq1!es are shown in Fig. 26.
transistor switches the light-source portion of the isolator. The Transformer Isolation - In Fig. 26(a), a pulse transformer
light-sensor portion changes from a high impedance to a low is used to provide electrical isolation of the sensor from
impedance when the logic output transistor is switched from incoming ac power lines. The pulse transformer T 1 isolates the
T,
PULSE
TRANSFORMER
"
25.2
11 VAC
T2 KNIGHT SPRAGUE
54E -1421 t1Z12
(OR EQUIV) (OR EOUIV.1
sensor from terminal No. I of the triac Y 1, and transformer technique, less power is supplied to the load (reduced duty
T2 isolates the CA3058 or CA3059 from the power lines. cycle) as the error signal is reduced (sensed temperature
Capacitor C 1 shifts the phase of the output pulse at terminal approaches the set temperature).
No.4 in order to retard the gate pulse delivered to triac Y I to
compensate for the small phase-shift introduced by
transformer T 1.
Photocoupler Isolation - In Fig. 26(b), a photocoupler
provides electrical isolation of the sensor logic from the
incoming ac power lines. When a logic "I" is applied at the
input of the photocoupler, the triac controlling the load will
be turned on whenever the line voltage passes through zero.
When a logic "0" is applied to the photocoupler, the triac will
turn off and remain off until a logic" I " appears at the input
of the photocoupler.
TEMPERATURE CONTROLLERS
Fig. 27 shows a triac used in an on-off
temperature-controller configuration. The triac is turned on at
zero voltage whenever the voltage Vs exceeds the reference
Before such a system is implemented, a time base is chosen
so that the on-time of the triac is varied within this time base.
The ratio of the on-to-off time of the triac within this time
interval depends on the thermal time constant of the system
and the selected temperature setting. Fig. 29 illustrates the
principle of proportional control. For this operation, power is
supplied to the load until the ramp voltage reaches a value
greater than the dc control signal supplied to the opposite side
of the differential amplifier. The triac then remains off for the
remainder of the time-base period. As a result, power is
"proportioned" to the load in a direct relation to the heat
demanded by the system.
LEVEL ~ ~<i
LEVEL
LEVEL
2
3 g*
CDZ
50% 75%
POWER POWER
OUTPUT OUTPUT
voltage Yr' The transfer characteristic of this system, shown in
Fig. 28(a), indicates significant thermal overshoots and
undershoots, a well-known characteristic of such a system. The
differential or hysteresis of this system, however, can be
further increased, if desired, by the addition of positive
feedback.
For precise temperature-control applications, the
proportional-control technique with synchronous switching is
employed. The transfer curve for this type of controller is
shown in Fig. 28(b). In this case, the duty cycle of the power For this application, a simple ramp generator can be
supplied to the load is varied with the demand for heat realized with a minimum number of active and passive
reqUired and the thermal time constant (inertia) of the system. components. A ramp having good linearity is not required for
For example, when the temperature setting is increased in an proportional operation because of the nonlinearity of the
on-off type of controller, full power (100 per cent duty cycle) thermal system and the closed-loop type of control. In the
is supplied to the system. This effect results in significant circuit shown in Fig. 30, the ramp voltage is generated when
temperature excursions because there is no anticipatory circuit the capacitor C 1 charges through resistors RO and R 1. The
to reduce the power gradually before the actual set time base of the ramp is determined by resistors R2 and R),
temperature is achieved. However, in a proportional control capacitor C2, and the breakover voltage of the 03202U* diac.
solved by use of the sensitive-gate RCA-40526 triac. The high
sensitivity of this device (3 milliamperes maximum) and low
10JLF
50 VDC
latching current (approximately 9 milliamperes) permit
C, - synchronous operation of the temperature-controller circuit.
COMMON In Fig. 32(a), it is apparent that, though the gate pulse Vg of
PIN CONNECTIONS REFER TO
triac Y 1 has elapsed, triac Y2 is switched on by the current
ReA CA3058 OR CA3059 through RL I. The low latching current of the RCA-40526
triac results in dissipation of only 2 watts in RL I, as opposed
to 10 to 20 watts when devices that have high latching
currents are used.
When the voltage across C2 reaches approximately 32 volts,
the diac switches and turns on the 2N697S transistor and
IN914 diodes. The capacitor C1 then discharges through the
collector-to-emitter junction of the transistor. This discharge
time is the retrace or flyback time of the ramp. The circuit
shown can generate ramp times ranging from 0.3 to
2.0 seconds through adjustment of R2. For precise
temperature regulation, the time base of the ramp should be
shorter than the thermal time constant of the system, but long
with respect to the period of the 60-Hz line voltage. Fig. 31
shows a triac connected for the proportional mode.
Electric-Heat Application
For electric-heating applications, the RCA-2N5444
Fig. 32(a) shows a dual-output temperature controller that 40-ampere triac and the zero-voltage switch constitute an
drives two triacs. When the voltage Vs developed across the optimum pair. Such a combination proVides synchronous
temperature-sensing network exceeds the reference voltage switching and effectively replaces the heavy-duty contactors
VRI, motor No. I turns on. When the voltage across the which easily degrade as a result of pitting and wearout from
network drops below the reference voltage VR2, motor No.2 the switching transients. The salient features of the 2N5444
turns on. Because the motors are inductive, the currents 1M1 40-ampere triac are as follows:
(I) 300-ampere single-surge capability (for operation at
60-Hz),
(2) a typical gate sensitivity of 20 milliamperes in the [(+)
and m(+) modes,
(3) low on-state voltage of 1.5 volts maximum at
40 amperes, and
(4) available VOROM equal to 600 volts.
Fig.33 shows the circuit diagram of a
synchronous-switching heat-staging controller that is used for
electric heating systems. Loads as heavy as 5 kilowatts are
switched sequentially at zero voltage to eliminate RFI and
prevent a dip in line voltage that would occur if the full
25 kilowatts were to be switched simultaneously.
Transistor Ql and Q4 are used as a constant-current source
to charge capacitor C in a linear manner. Transistor Q2 acts as a
buffer stage. When the thermostat is closed, a ramp voltage is thermal load, would be a function of the BTU's required by
prOVided at output Eo. At approximately 3-second intervals, the system or the temperature differential between an indoor
each 5-kilowatt heating element is switched onto the power and outdoor sensor within the total system environment. That
system by its respective triac. When there is no further demand is, the closing of the thermostat would not switch in all the
for heat, the thermostat opens, and capacitor C discharges heating elements within a short time interval, which inevitably
through R, and R2 to cause each triac to turn off in the results in undesired temperature excursions, but would switch
reverse heating sequence. It should be noted that some in only the number of heating elements reqUired to satisfy the
half-cycling occurs before the heating element is switched fully actual heat load.
on. This condition can be attributed to the inherent Oven/Broiler Control
dissymmetry of the triac and is further aggravated by the Zero-voltage switching is demonstrated in the oven control
slow-rising ramp voltage applied to one of the inputs. The circuit shown in Fig.35. In this circuit, a sensor element is
timing diagram in Fig.34 shows the turn-on and turn-off included in the oven to provide a closed-loop system for
sequence of the heating system being controlled. accurate control of the oven temperature.
Seemingly, the basic method shown in Fig. 33 could be As shown in Fig. 35, the temperature of the oven can be
modified to provide proportional control in which the number adjusted by means of potentiometer R I, which acts, together
of heating elements switched into the system, under any given with the sensor, as a voltage divider at terminal 13. The voltage
F, RL, RL2 RL3 RL. RL5
MT2 RCA
2N5444
120VAC
60Hz MT,
1/16 A
F2
THERMOSTAT ~
TRANSISTORS Q I .02 AND 04 OR MANUAL I

ARE PART OF ReA -CA3096E SWITCH I
L
INTEGRATED-CIRCUIT N-P-N/P-N-P
TRANSISTOR ARRAV
circuit that provides approximately IO-per-cent hysteresis is
demonstrated.
In addition to allowing the selection of a hysteresis value,
the flexibility of the control circuit permits incorporation of
other features. A PTC sensor is readily used by interchanging
terminals 9 and 13 of the circuit shown in Fig. 35 and
substituting the PTC for the NTC sensor. In both cases, the
sensor element is directly returned to the system ground or
common, as is often desired. Terminal 9 can be connected by
external resistors to proVide for a variety of biasing, e.g., to
match a lower-resistance sensor for which the switching-point
voltage has been reduced to maintain the same sensor current.
To accommodate the self-cleaning feature, external
switching, which enables both broiler and oven units to be
paralleled, can easily be incorporated in the design. Of course,
the potentiometer must be capable of a setting such that the
sensor, which must be characterized for the high, self-clean
temperature, can monitor and establish control of the
high-temperature, self-clean mode. The ease with which this
self-clean mode can be added makes the over-all solid-state
at terminal 13 is compared to the fixed bias at terminal9 systems cost-competitive with electromechanical systems of
which is set by internal resislors R4 and Rs. When the oven is comparable capability. In addition, the system incorporates
cold and the resistance of the sensor is high, transistors Q2 and solid-state reliability while being neater, more easily calibrated,
Q4 are off, a pulse of gate current is applied to the triac, and and containing less-costly system wiring.
heat is applied to the oven. Conversely, as the desired Integral-Cycle Temperature Controller (No half-cycling)
temperature is reached, the bias at terminal 13 turns the triac If a temperature controller which is completely devoid of
off. The closed-loop feature then cycles the oven element on half-cycling and hysteresis is required, then the circuit shown
and off to maintain the desired temperature to approximately in Fig. 36 may be used. This type of circuit is essential for
2C of the set value. Also, as has been noted, external applications in which half-cycling and the resultant de
resistors between terminals 13 and 8, and 7 and 8, can be used component could cause overheating of a power transformer on
to vary this temperature and provide hysteresis. In Fig. II, a the utility lines.
012018
.
Y,
ReA "'.-
S26000
5KW
LOAD
HEATER)
AL
* FOR PROPORTIONAL OPERATION OPEN TERMINALS 10,11, AND 13. AND CONNECT POSITIVE RAMP VOLTAGE TO TERMINAL 13
** SELECTED FOR IGT=6 mA MAXIMUM .
FORMERLY ReA 44003
FORMERLY RCA 40655
In the integral-cycle controller, when the temperature being Of course, the circuit shown in Fig. 37 can readily be
controlled is low, the resistance of the thermistor is high, and converted to a tme proportional integral-cycle temperature
an output signal at terminal 4 of zero volts is obtained. The controller simply by connection of a positive-going ramp
SCR (Y J), therefore, is turned off. The triac (Y 2) is then voltage to terminal9 (with terminals 10 and II open), as
triggered directly from the line on positive cycles of the ac previously discussed in this Note.
voltage. When Y2 is triggered and supplies power to the load Thermocouple Temperature Control
RL, capacitor C is charged to the peak of the input voltage. Fig. 38 shows the CA3080A operating as a pre-amplifier for
When the ac line swings negative, capacitor C discharges the zero-voltage switch to form a zero-voltage switching circuit
through the triac gate to trigger the triac on the negative for use with thermocouple sensors.
half-cycle. The diode-resistor-capacitor "slaving network"
triggers the triac on negative half-cycle to provide only integral
cycles of ac power to the load.
When the temperature being controlled reaches the desired
value, as determined by the thermistor, then a positive voltage
level appears at terminal 4 of the zero-voltage switch. The SCR
then starts to conduct at the beginning of the positive input
cycle to shunt the trigger current away from the gate of the
triac. The triac is then turned off. The cycle repeats when the
SCR is again turned OFF by the zero-voltage switch.
The circuit shown in Fig. 37 is similar to the configuration
in Fig. 36 except that the protection circuit incorporated in
the zero-voltage switch can be used. In this new circuit, the
NTC sensor is connected between terminals 7 and 13, and
transistor Qo inverts the signal output at terminal 4 to nullify
the phase reversal introduced by the SCR (Y 1)' The internal
power supply of the zero-voltage switch supplies bias current
to transistor Qo'
Y2
MT2
2NS444
2.2 K
5K 5W Y2
5W
IK
112W
ReA"'-
c 526000
Ie<'
J5VDC +
120VAC
60 H, 2N697S
IK
2W
I 5KW
LOAD
(HEATER)
RL
O.Sp.F
20CV DC
* FOR PROPORTIONAL QPERATIOfll OPEN TERMINALS 9,10 AND II AND CONNECT POSTIVE RAMP VOLTAGE TO TERMINAL 9
**SELECTED FOR IGT=6 mA MAXIMUM
-FORMERLY ReA 44003
_FORMERLY RCA 40655
MACHINE CONTROL AND AUTOMATION Minimized generation of EMI/RFI using zero-voltage
The earlier section on interfacing techniques indicated switching techniques in conjunction with thyristors.
several techniques of controlling ac loads through a logic Elimination of high-voltage transients generated by
system. Many types of automatic equipment are not complex relay-contact bounce and contacts breaking inductive
enough or large enough to justify the cost of a flexible logic loads, as shown in Fig. 39 ..
system. A special circuit, designed only to meet the control d. Compactness of the control system.
requirements of a particular machine, may prove more The entire control system could be on one printed-circuit
economical. For example, consider the simple machine shown board, and an over-all cost advantage would be achieved.
in Fig. 39; for each revolution of the motor, the belt is Fig. 41 is a timing diagram for the proposed solid-state
advanced a prescribed distance, and the strip is then punched.
The machine also has variable speed capability. ZERO-
CROSSING
PULSE
60 HZ"
machine control, and Fig.42 is the corresponding control

schematic. A variable-speed machine repetition rate pulse is set
The typical electromechanical control circuit for such a up using either a unijunction oscillator or a transistor astable
machine might consist of a mechanical cambank driven by a multivibrator in conjunction with a 10-millisecond one-shot
separate variable speed motor, a time delay relay, and a few multivibrator. The first zero-voltage switch in Fig. 42 is used
logic and power relays. Assuming use of industrial-grade to synchronize the entire system to zero-voltage crossing. Its
controls, the control system could get quite costly and large. output is inverted to simplify adaptation to the rest of the
Of greater importance is the necessity to eliminate transients circuit. The center zero-voltage switch is used as an interface
generated each time a relay or switch energizes and deenergizes for the photo-cell, to control one revolution of the motor. The
the solenoid and motor. Fig. 40 shows such transients, which gate drive to the motor triac is continuous dc, starting at zero
might not affect the operation of this machine, but could voltage crossing. The motor is initiated when both the machine
affect the more sensitive solid-state equipment operating in the rate pulse and the zero-voltage sync are at low voltage. The
area. bottom zero-voltage switch acts as a time-delay for pulsing the
solenoid. The inhibit input, terminal 1, is used to assure that
A more desirable system would use triacs and zero-voltage
the solenoid will not be operated while the motor is running.
switching to incorporate the following advantages:
The time delay can be adjusted by varying the reference level
a. Increased reliability and long life inherent in
(50K potentiometer) at terminal 13 relative to the capacitor
solid-state devices as opposed to moving parts and
charging to that level on terminal 9. The capacitor is reset by
contacts associated with relays.
the SCR during the motor operation. The gate drive to the
solenoid triac is direct current. Direct current is used to trigger
both the motor and solenoid triacs because it is the most
desirable means of switching a triac into an inductive load. The
output of the zero-voltage switch will be continuous dc by
connecting terminal 12 to common. The output under dc
operation should be limited to 20 milliamperes. The motor
triac is synchronized to zero crossing because it is a
high-crurent inductive load and there is a chance of generating
RFI. The solenoid is a very low current inductive load, so
there would be little chance of generating RFI: therefore, the
initial triac turn-on can be random, which simplifies the
circuitry.
This example shows the versatility and advantages of the
RCA zero-voltage switch used in conjunction with triacs as
interfacing and control elements for machine control.
~:~
lom'4 MACHINE
REP RATE
.O-H'~
LINE
VOLTAGE I
I 1 I
-
I
--- -
I I I I :
r---16.67ms~ I I
LAMP I
::::I 1 I I
OUTPUT I I I
400-Hz
LINE
VOLTAGE
I
L
+-
I r-
r-------- 175 ms +-- ......j ~ARIABlE 1
[REFERENCE I
I ILEVElS ,
TIME DELAY
FUNCTION OR
I
l!I~a.a.
IPJ r;:r<:r<:J
e.-'&':/
a. .11 a. :
W 'I(J
a.
'<J
ONE-SHOT
MULTIV18RATOR
without noticeable flicker. Fourteen different levels of lamp

intensity can be obtained in this manner. A line-synced ramp is
set up with the desired period and applied to terminal No.9 of
the differential amplifier within the zero-voltage switch, as
shown in Fig. 45. The other side of the differential amplifier
(terminal No. 13) uses a variable reference level, set by the
400-Hz TRIAC APPLICATIONS 50K potentiometer. A change of the potentiometer setting
The increased complexity of aircraft control systems, and changes the lamp intensity.
the need for greater reliability than electromechanical In 400-Hz applications it may be necessary to widen and
sWitching can offer, has led to the use of solid-state power shift the zero-voltage switch output pulse (which is typically
switching in aircraft. Because 400-Hz power is used almost 12 microseconds wide and centered on zero voltage crossing),
universally in aircraft systems, RCA offers a complete line of to assure that sufficient latching current is available. The 4K
triacs rated for 400-Hz applications. Use of the RCA resistor (terminal No. 12 to common) and the
zero-voltage switch in conjunction with these 400-Hz triacs 0.0 I 5-microfarad capacitor (terminal No.5 to common) are
results in a minimum of RFI, which is especially important in used for this adjustment.
aircraft.
Areas of application for 400-Hz triacs in aircraft include:
a.
b.
c.
Heater controls for food-warming ovens and for
windshield defrosters.
Lighting controls for instrument panels and cabin
illumination
Motor controls
[fij-
115 V
400
H.
J<F
d. Solenoid controls
e. Power-supply switches
Lamp dimming is a simple triac application that
demonstrates an advantage of 400-Hz power over 60-Hz
power. Fig.43 shows the adjustment of lamp intensity by
phase control of the 60-Hz line voltage. RFI is generated by
the step functions of power each half cycle, requiring
extensive filtering. Fig. 44 shows a means of controlling power
to the lamp by the zero-voltage-switching technique. Use of
400-Hz power makes possible the elimination of complete or
half cycles within a period (typically 17.5 milliseconds)
SOLID-STATE TRAFFIC FLASHER Transistors QI and Q2 inhibit these pulses to the gates of the
Another application which illustrates the versatility of the triacs until the triacs turn on by the logical" I" (Vcc high)
zero-voltage switch, when used with RCA thyristors, involves state of the flip-flop.
switching traffic-control lamps. In this type of application, it is The arrangement described can also be used for a
essential that a triac withstand a current surge of the lamp load synchronous, sequential trafficcontroller system by addition
on a continuous basis. This surge results from the difference of one triac, one gating transistor, a "divide-by-three" logic
between the cold and hot resistance of the tungsten filament. circuit, and modification in the design of the diac pulse
If it is assumed that triac turn-on is at 90 degrees from the generator. Such a system can control the familiar red, amber,
zero-voltage crossing, the first current-surge peak is and green traffic signals that are found at many intersections.
approximately ten times the peak steady-state value or fifteen
SYNCHRONOUS LIGHT FLASHER
times the steady-state rms value. The second current-surge
Fig. 47 shows a simplified version of the
peak is approximately four times the steady-state rms value.
synchronous-switching traffic light flasher shown in Fig. 46.
When the triac randomly switches the lamp, the rate of Flash rale is set by use of the curve shown in Fig. 16. If a more
current rise di/dt is limited only by the source inductance. The precise flash rale is required, the ramp generator described
triac di/dt rating may be exceeded in some power systems. In previously may be used. In this circuit, ZVSl is the master
many cases, exceeding the rating results in excessive current control unit and ZVS2 is slaved to the output of ZVS1
concentrations in a small area of the device which may through its inhibit terminal (terminal I). When power is
produce a hot spot and lead to device failure. Critical applied to lamp No. I, the voltage of terminal 6 on ZVSI is
applications of this nature require adequate drive to the triac high and ZVS2 is inhibited by the current in Rx. When lamp
gate for fast turn-on. In this case, some inductance may be
required in the load circuit to reduce the initial magnitude of
the load current when the triac is passing through the active
region. Another method may be used which involves the
switching of the triac at zero line voltage. This method
involves the supply of pulses to the triac gate only during the
presence of zero voltage on the ac line.
Fig. 46 shows a circuit in which the lamp loads are switched
at zero line voltage. This approach reduces the initial di/dt,
decreases the required triac surge-current ratings, increases the
operating lamp life, and eliminates RFI problems. This circuit
consists of two triacs, a flip-flop (FF-!), the zero-voltage
switch, and a diac pulse generator. The flashing rate in this
circuit is controlled by potentiometer R, which provides
between 10 and 120 flashes per minute. The state of FFI
determines the triggering of triacs Y I or Y2 by the output
pulses at terminal 4 generaled by Ihe zero-crossing circuit.
No. I is off, ZVS2 is not inhibited, and triac Y2 can fire. The upon the relative magnitudes of these signals. Because the
power supplies operate in parallel. The on-off sensing amplifier signals are often at very low voltage levels and very accurate
in ZVS2 is not used. discrimination is normally required between them, differential
comparators in many cases employ differential amplifiers as a
TRANSIENT-FREE SWITCH CONTROLLERS
basic building block. However, in many industrial control
The zero-voltage switch can be used as a simple solid-state
applications, a high-performance differential comparator is not
switching device that permits ac currents to be turned on or
required. That is, high resolution, fast switching speed, and
off with a minimum of electrical transients and circuit noise.
similar features are not essential. The zero-voltage switch is
The circuit shown in Fig. 48 is connected so that, after the
ideally suited for use in such applications. Connection of
control terminal 14 is opened, the electronic logic waits until
terminal 12 to terminal 7 inhibits the zero-voltage threshold
the power-line voltage reaches a zero crossing before power is
detector of the zero-voltage switch, and the circuit becomes a
applied to the load ZL. Conversely, when the control terminals differential comparator.
are shorted, the load current continues until it reaches a zero
Fig. 50 shows the circuit arrangement for use of the
crossing. This circuit can switch a load at zero current whether
zero-voltage switch as a differential comparator. In this
it is resistive or inductive.
application, no external dc supply is required, as is the case
The circuit shown in Fig. 49 is connected to provide the
with most commercially availabte integrated-circuit
opposite control logic to that of the circuit shown in Fig. 48.
comparators; of course, the output-current capability of the
That is, when the switch is closed, power is supplied to the
zero-voltage switch is reduced because the circuit is operating
load, and when the switch is opened, power is removed from
in the dc mode. The 1000-ohm resistor RG, connected
the load. between terminal 4 and the gate of the triac, limits the output
In both configurations, the maximum rms load current that current to approximately 3 milliamperes.
can be switched depends on the rating of triac Y 2. If Y 2 is an When the zero-voltage switch is connected in the dc mode,
RCA-2N5444 triac, an rms current of 40 amperes can be
the drive current for terminal 4 can be determined from a
switched. curve of the external load current as a function of dc voltage
DIFFERENTIAL COMPARATOR FOR INDUSTRIAL USE from terminals 2 and 7. This curve is shown in the technical
Differential comparators have found widespread use as limit bulletin for RCA integrated-circuit zero-voltage switches, File
detectors which compare two analog input signals and provide No. 490. Of course, if additional output current is required, an
a go/no-go, logic 'one" or logic "zero" output, depending external dc supply may be connected between terminals 2
MTI
'2
T230IB
MT2
120VAC
60 H,
!
O.II'F
200
V DC
*IF Y2' FOR EXAMPLE. IS A 4QAMPERE TRIAC, THEN RJ MUST BE DECREASED TO SUPPLY
SUFFICIENT IGT FOR Y2
FORMERLY ReA 40691

120VAC
60 Hz
O"~F
3J
200
V DC
* IF Y2, FOR EXAMPLE, IS A 40-AMPERE TRIAC, RI MUST BE DECREASED TO SUPPLY

SUFFICIENT IGT FOR Y2
FORMERLY ReA 40691
and 7, and resistor Rx (shown in Fig. 50) may be removed.

The chart below compares some of the operating
ZL
characteristics of the zero-voltage switch, when used as a
ANY POWER
comparator, with a typical high-performance commercially FACTOR
available integrated-circuit differential comparator.
Zero-Voltage Typical
Switch Integrated-Circuit
Parameters (Typical Values) Comparator (710)
Sensitivity 30mV 2 mV
Switching speed
(rise time)
Output drive
capability
POWER ONE-SHOT CONTROL

Fig.51 shows a circuit which triggers a triac for one complete
half-cycle of either the positive or negative alternation of the
ac line voltage. In this circuit, triggering is initiated by the
push button PB-I, which produces triggering of the triac near
zero voltage even though the button is randomly depressed
during the ac cycle. The triac does not trigger again until the
button is released and again depressed. This type of logic is
required for the solenoid drive of electrically operated stapling
12
1/3 CD4QQ7A 1/2 CD4QI3A
8
~FF-I
'J~C"'226}2
guns, impulse hammers, and the like, where load-current flow determines the requirement for their supply to the triac gate.
is required for only one complete half-cycle. Such logic can The first pulse generated serves as a "framing pulse" and does
also be adapted to keyboard consoles in which contact bounce not trigger the triac but toggles FF-I. Transistor QG is then
produces transmission of erroneous information. turned off. The second pulse triggers the triac and FF-! which,
In the circuit of Fig. 51, before the button is depressed, ill turn, toggles the second flip-flop FF-2. The output of FF-2
both flip-flop outputs are in the "zero" state. Transistor QG is turns on transistor Q7, as shown in Fig. 52, which inhibits all
biased on by the output of flip-flop FF-I. The differential further output pulses. When the pushbutton is released, the
comparator which is part of the zero-voltage switch is initially circuit resets itself until the process is repeated with the
biased to inhibit output pulses. When the push button is button. Fig. 53 shows the timing diagram for the described
depressed, pulses are generated, but the state of QG operating sequence.
f.:..!.. PIN 2
0
..,1:"-
I II TRIAC TURNS
I liON
-1 PIN I , I
: I
TRIAC
INHIBITED
~
~ PIN 12
ZERO
VOLTAGE
DETECTOR
PHASE CONTROL CIRCUIT Isolation of DC Logic Circuitry
Fig. 54 shows a circuit using a CA3058 or CA3059 As explained earlier under Special Application
zero-voltage switch together with two CA3086 Considerations, isolation of the de logic circuitry* from the ac
integrated-circuit transistor arrays to form a phase-control line, the triac, and the load circuit is often desirable even in
circuit. This circuit is specifically designed for speed control of many single-phase power-control. applications. In control
ac induction motors, but may also be used as a light dimmer. circuits for polyphase power systems, however, this type of
The circuit, which can be operated from a line frequency of isolation is essential, because the common point of the de logic
50-Hz to 400-Hz, consists of a zero-voltage detector, a circuitry cannot be referenced to a common line in all phases.
line-synchronized ramp generator, a zero-current detector, and In the three-phase circuits described in this section,
a line-derived control circuit (i.e., the zero-voltage switch). The photo-optic techniques (i.e., photo-coupled isolators) are used
zero-voltage detector (part of CA3086 No. I) and the ramp to provide the electrical isolation of the de logic command
generator (CA3086 No.2) provide a line-synchronized signal from the ac circuits and the load. The photo-coupled
ramp-voltage output to terminal 13 of the zero-voltage switch. isolators consist of an infrared light-emitting diode aimed at a
The ramp voltage, which has a starting voltage of 1.8 volts, silicon photo transistor, coupled in a common package. The
starts to rise after the line voltage passes the zero point. The light-emitting diode is the input section, and the photo
ramp generator has an oscillation frequency of twice the transistor is the output section. The two components provide a
incoming line frequency. The slope of the ramp voltage can be voltage isolation typically of 1500 volts. Other isolation
adjusted by variation of the resistance of the I-megohm techniques, such as pulse transformers, magnetoresistors, or
ramp-control potentiometer. The output phase can be reed relays, can also be used with some circuit modifications.
controlled easily to provide 1800 firing of the triac by
Resistive Loads
programming the voltage at terminal 9 of the zero-voltage
Fig. 55 illustrates the basic phase relationships of a
switch. The basic operation of the zero-voltage switch driving a
balanced three-phase resistive load, such as may be used in
thyristor with an inductive load was explained previously in
heater applications, in which the application of load power is
the discussion on switching of inductive loads.
TRIAC POWER CONTROLS FOR

THREE-PHASE SYSTEMS
This section describes recommended configurations for
power-control circuits intended for use with both inductive
and resistive balanced three-phase loads. The specific design
requirements for each type of loading condition are discussed.
In the power-control circuits described, the
integrated-circuit zero-voltage switch is used as the trigger
circuit for the power triacs. The following conditions are also
imposed in the design of the triac control circuits:
I. The load should be connected in a three-wire
configuration with the triacs placed external to the load;
eiter delta or wye arrangements may be used. Four-wire
loads in wye configurations can be handled as three
independent single-phase systems. Delta configurations in
which a triac is connected within each phase rather than
in the incoming lines can also be handled as three
independent single-phase systems.
2. Only one logic command signal is available for the
control circuits. This signal must be electrically isolated
from the three-phase power system.
3. Three separate triac gating signals are required.
4. For operation with resistive loads, the zero-voltage
switching technique should be used to minimize any
radio-frequency interference (RFI) that may be
generated.
* The de logic circuitry provides the low-level electrical signal that

Fig. 55 - Voltage phase relationship for a three-phase resistive load
dictates the state of the load. For temperature controls, the de logic
when the application of load power is controlled by
circuitry includes a temperature sensor for feedback. The ReA zerovoltage switching: (a) voltage waveforms, (b) load-circuit
integrated-circuit zero-voltage switch, when operated in the de mode orientation of voltages. (The dashed lines indicate the normal
with some additional circuitry. can replace the de logic circuitry for relationship of the phases under steady-state conditions. The
temperature controls. deviation at start-up and turn-off should be noted.)
IcAI'Hn82 ---~_'~i _, ~ ~~~_
voltage. zero-voltage crossing relative to. their particular phase. A
2. A single phase of a wye configuration type of three-wire balanced three-phase sensing circuit is set up with the three
system cannot be turned on. zero-voltage switches each connected to a particular phase on
3. Two phases must be turned on for initial starting of the their common side (terminal 7) and referenced at their high
system. These two phases form a single-phase circuit side (terminal 5), through the current-limiting resistors R4,
which is out of phase with both of its component phases. R5, and R6, to an established artificial neutral point. This
The single-phase circuit leads one phase by 30 degrees artificial neutral point is electrically equivalent to the
and lags the other phase by 30 degrees. inaccessible neutral point of the wye type of three-wire load
These conditions indicate that in order to maintain a and, therefore, is used to establish the desired phase
system in which no appreciable RFI is generated by the relationships. The same artificial neutral point is also used to
switching action from initial starting through the steady-state establish the proper phase relationships for a delta type of
operating condition, the system must first be turned on, by three-wire load. Because only one triac <s pulsed on at a time,
zero-voltage switching, as a single-phase circuit and then must the diodes (01, 02, and 03) are necessary to trigger the
revert to synchronous three-phase operation. opposite-polarity triac, and, in this way, to assure initial
latching-on of the system. The three resistors (Rl, R2, and
Fig. 56 shows a simplified circuit configuration of a
R3) are used for current limiting of the gate drive when the
three-phase heater control that employs zero-voltage
opposite-polarity triac is triggered on by the line voltage.
synchronous switching in the steady-state operating condition,
with random starting. In this system, the logic command to In critical applications that require suppression of all
turn on the system is given when heat is required, and the generated RFI, the circuit shown in Fig. 57 may be used. In
command to turn off the system is given when heat is not addition to synchronous steady-state operating conditions, this
required. Time proportioning heat control is also possible circuit also incorporates a zero-voltage starting circuit. The
through the use of logic commands. start-up condition is zero-voltage synchronized to a
(' ~
\.
3-PHASE
RESI$TrVE LOAD
(DEL TA OR WYEl
Fig. 56 - Simplified diagram of a three-phase heater control that

employs zero-voltage synchronous switching in the
steady-state operating conditions.
single-phase, 2-wire, line-to-line circuit, comprised of phases A Inductive loads
and B. The logic command engages the single-phase start-up For inductive loads, zero-voltage turn-on is not generally
zero-voltage switch and three-phase photo-coupled required because the inductive current cannot increase
isolators OC13, OCI4, OCI5 through the photo-eoupled instantaneously; therefore, the amount of RFI generated is
isolators OCII and OCI2. The single-phase zero-voltage usually negligible. Also, because of the lagging nature of the
switch, which is synchronized to phases A and B, starts the inductive current, the triacs cannot be pulse-fired at zero
system at zero voltage. As soon as start-up is accomplished, the voltage. There are several ways in which the zero-voltage
three photo-eoupled isolators OCI3, OCI4, and OCI5 take switch may be interfaced to a triac for inductive-load
control, and three-phase synchronization begins. When the applications. The most direct approach is to use the
"logic command" is turned off, all control is ended, and the zero-voltage switch in the dc mode, i.e., to provide a
triacs automatically turn off when the sine-wave current continuous dc output instead of pulses at points of
decreases to zero. Once the first phase turns off, the other two zero-voltage crossing. This mode of operation is accomplished
will turn off simultaneously, 900 later, as a single-phase by connection of terminal 12 to terminal 7, as shown in
line-to-Iine circuit, as is apparent from Fig. 55. Fig. 58. The output of the zero-voltage switch should also be
TO
3 PHASE
RESISTIVE
LOAD
(OELTA OR WYEl
Fig. 57 - Three-phase power control that employs zero-voltage

synchronous switching both for steady-state operation and
for starting.
,
'--\-I
I
\ 10K
PHOTO-COUPLED
ISOLATORS
limited to approximately 5 milliamperes in the dc mode by the trigger pulses to the gate of the power triac (one pulse per half
750-ohm series resistor. Use of a triac such as the T230 I 0* is cycle); the power dissipation in this device, therefore, will be
recommended for this application. Terminal 3 is connected to minimal.
terminal 2 to limit the steady-state power dissipation within Simplified circuits using pulse transformers and reed relays
the zero-voltage switch. For most three-phase inductive load will also work quite satisfactorily in this type of application.
applications, the current-handling capability of the 40692 triac The RC networks across the three power triacs are used for
(2.5 amperes) is not sufficient. Therefore, the 40692 is used as suppression of the commutating dv/dt when the circuit
a trigger triac to turn on any other currently available power operates into inductive loads.
triac that may be used. The trigger triac is used only to provide
Formerly ReA 40692
The specific integrated-circuits, triacs, SCR's, and rectifiers included in circuit diagrams shown in this Application Note are listed
below. Additional information on these devices can be obtained by requesting the applicable RCA data-bulletin file number.
~~ ~~ ~~. ~~
CA3058, CA3059, and CA3079 490 T2300B (40526) 470
CA3099E 620 T230lB (40691), T2301D (40692) 431
CA3086 483 T64170 (40708) 406
CA3080 475 S2600D (40655) 496
CD4007A,CD4013A 479 Dl20lB (44003) 495
2N5444 456 D3202U (45412) 577
T2800B (40668) 364
Note: Numbers in parenthesis (e.g. 40668) are former RCA type numbers.
Guide to ReA Solid-State Devices
TA147 lN539 550206 255 3 RECT TA2275 2N2895 550204 517 143 PWR
TA148 lN540 550206 255 3 RECT TA2276 2N2896 550204 517 143 PWR
TA149 lNl095 550206 255 3 RECT TA2277 2N2897 550204 517 143 PWR
TA1000 lN547 550206 255 3 RECT TA2307 2N3375 550205 52 386 RF
TA1003 1N440B 550206 252 5 RECT TA2311 2N2876 550205 28 32 RF
TAl 004 lN441B 550206 252 5 RECT TA2333 2N2857 550205 33 61 RF
TA1005 lN442B 550206 252 5 RECT TA2358 2N918 550205 20 83 RF
TA1006 lN443B 550206 252 5 RECT TA2358A 2N3600 550205 20 83 RF

TA1007 lN444B 550206 252 5 RECT TA2363 2N3839 550205 69 229 RF
TA1008 lN445B 550206 252 5 RECT TA2388 2N3229 550205 45 50 RF
TA1011 lN2859A 550206 265 91 RECT TA2402A 2N3054 550204 45 527 PWR
TA1013 lN2861A 550206 265 91 RECT TA2442 2N3870 550206 218 578 5CR
TA1014 1N2862A 550206 265 91 RECT TA2444 2N3871 550206 218 578 5CR
TA1015 lN2863A 550206 265 91 RECT TA2447 2N3872 550206 218 578 5CR
TA1016 lN2864A 550206 265 91 RECT TA2458 2N3439 550204 286 64 PWR
TA1049 lN248C 550206 287 6 RECT TA2462 2N3118 550205 37 42 RF
TA1050 lN249C 550206 287 6 RECT TA2463 2N3119 550205 41 44 RF

TA1051 lN250C 550206 287 6 RECT TA2468A 2N3442 550204 133 528 PWR
TA1053 1N1196A 550206 287 6 RECT TA2470 2N3440 550204 286 64 PWR
TA1054 lNl197A 550206 287 6 RECT TA2492 2N3263 550204 475 54 PWR
TA 1076 lN1199A 550206 283 20 RECT TA2495 2N3266 550204 475 54 PWR
TA1077 lN1200A 550206 283 20 RECT TA2501 2N3: 02 550205 48 56 RF
TA1078 lN1202A 550206 283 20 RECT TA2509 2N3: 78 550204 443 299 PWR
TA1079 lN1203A 550206 283 20 RECT TA2509A 2N3l:79 550204 443 299 PWR
TA1080 lN1204A 550206 283 20 RECT TA2510 2N3~83 550204 304 138 PWR
TA1082 lN1206A 550206 283 20 RECT TA2512 2N3585 5~.204 304 138 PWR
TA1085 lNl183A 550206 291 38 RECT TA2515 2N690 5 206 225 96 5CR
TA1087 1N1186A 550206 291 38 RECT TA2551 2N3553 550205 52 386 RF
TA1095 lN1197A 550206 287 6 RECT TA2579 lN1341B 550206 281 58 RECT
TA1096 lN3194 550206 294 41 RECT TA2580 1N1342B 550206 281 58 RECT
TA1111 lN3193 550206 294 41 RECT TA2581 lN1344B 550206 281 58 RECT
TAl113 lN3196 550206 294 41 RECT TA2583 1N 1346B 550206 281 58 RECT
TA1121 lN3254 550206 294 41 RECT TA2585 1N 1348B 550206 281 58 RECT
TA1122 lN3255 550206 294 41 RECT TA2586 1N1341RB 550206 281 58 RECT
TA1123 1N3256 550206 294 41 RECT TA2587 lN1342RB 550206 281 58 RECT
TA1171 2N681 550206 225 96 5CR TA2588 lN1344RB 550206 281 58 RECT
TA1172 2N682 550206 225 96 5CR TA2589 1N1345RB 550206 281 58 RECT
TA1173 2N683 550206 225 96 5CR TA2590 lN1346RB 550206 281 58 RECT
TAl174 2N684 550206 225 96 5CR TA2591 1N1347RB 550206 281 58 RECT
TA1175 2N685 550206 225 96 5CR TA2592 1N1348RB 550206 281 58 RECT
TAl176 2N686 550206 225 96 5CR TA2597 2N3528 550206 144 114 5CR
TAll77 2N687 550206 225 96 5CR TA2598 2N3669 550206 203 116 5CR
TAl178 2N688 550206 225 96 5CR TA2600 40282 550205 279 68 RF
TAl179 2N689 550206 225 96 5CR TA2606 2N3478 550205 60 77 RF
TA1182 1N3563 550206 294 41 RECT TA2616 2N3632 550205 52 386 RF
TA1204 2N1842A 550206 234 28 5CR TA2617 2N3529 550206 144 114 5CR
TA1205 2N1843A 550206 234 28 5CR TA2618 2N3670 550206 203 116 5CR
TA1206 2N1844A 550206 234 28 5CR TA2619 40280 550205 275 301 RF
TA1207 2N1845A 550206 234 28 5CR TA2620 40281 550205 279 68 RF
TA1208 2N1846A 550206 234 28 5CR TA2621 2N3668 550206 203 116 5CR
TA1209 2N1847A 550206 234 28 5CR TA2644 3N140 550201 667 285 M05/FET
TA1210 2N1848A 550206 234 28 5CR TA2645A 2N3773 550204 149 526 PWR
TA1211 2N1849A 550206 234 28 5CR TA2650 2N3771 550204 141 525 PWR
TA1212 2N1850A 550206 234 28 5CR TA2651 2N4036 550204 410 216 PWR
TA1214 lN1187A 550206 291 38 RECT TA2653 53700B 550206 172 306 5CR
TA1215 lN1188A 550206 291 38 RECT TA2654 537000 550206 172 306 5CR
TA1216 lNl189A 550206 291 38 RECT TA2655 53700M 550206 172 306 5CR
TA1217 lNl190A 550206 291 38 RECT TA2657 40341 550205 287 74 RF
TA1222 2N3228 550206 144 114 5CR TA2657A 40340 550205 287 74 RF
TAl225 2N3525 550206 144 114 5CR TA2658 2N3866 550205 73 80 RF
TA1863 2N1491 550205 24 10 RF TA2669 2N5039 550204 461 698 PWR
TA1883 2N1492 550205 24 10 RF TA2669A 2N5038 550204 461 698 PWR
TA1910A 2N697 550204 493 16 PWR TA2670 2N4037 550204 410 216 PWR
TA1951 2N1493 550205 24 10 RF TA2670A 2N4314 550204 410 216 PWR
TA1986 2N699 550204 495 22 PWR TA2675 2N5016 550205 96 255 RF
TA2053 2N1613 550204 498 106 PWR TA2676 T2700B 550206 62 351 TRI
TA2053A 2N1711 550204 503 26 PWR TA2685 T27000 550206 62 351 TRI
TA2053B 2N2102 550204 498 106 PWR TA2692 2N3733 550205 64 72 RF
TA2192A 2N2270 550204 513 24 PWR TA2694 2N3896 550206 218 578 5CR
504
Developmental Number-to-Commercial Number Cross-Reference Index
DATA DATA
Comm. File Product Comm. File Product
Dev. No. BOOK Page Dev. No. BOOK Page
No. No. Line No. No. line
Vol. No. Vol. No.
TA2695 2N3897 550206 218 578 5CR TA5333 CA3036 550201 158 275 L1C
TA2696 2N3898 550206 218 578 5CR TA5334 CA3035 550201 243 274 L1C
TA2703A 40349 550204 26 88 PWR TA5334 CA3035V1 550201 243 274 L1C
TA2705 2N3873 550206 218 578 5CR TA5345 CA3028A 550201 318 382 L1C
TA2707 2N3899 550206 218 578 5CR TA5345A CA30288 550201 318 382 L1C
TA2710 41024 550205 379 658 RF TA5346 CA3015A 550201 89 310 L1C
TA2714 2N4012 550205 77 90 RF TA5347 CA3010A 550201 89 310 L1C
TA2733 40319 550204 654 78 PWR TA5348 CA3030A 550201 89 310 L1C
TA2733A 40362 550204 654 78 PWR TA5349 CA3029A 550201 89 310 L1C
TA2758 2N6093 550205 216 484 RF TA5350 CA3016A 550201 89 310 L1C
TA2761 40608 550205 291 356 RF TA5351 CA3008A 550201 89 310 L1C
TA2765 2N5239 550204 373 321 PWR TA5360 CA3044 550201 484 340 L1C
TA2765A 2N5240 550204 373 321 PWR TA53618 C04000A 550203 30 479 C05/Ma5
TA2773 2N4101 550206 144 114 5CR TA5369 CA3040 550201 282 363 L1C
TA2774 2N4102 550206 144 114 5CR TA53718 CA3062 550201 367 421 L1C
TA2775 2N4103 550206 203 116 5CR TA5385CV C04024AK 550203 120 503 C05/M05
TA2791 2N5102 550205 113 279 RF TA5401 CA3038 550201 80 316 L1C
TA2792 2N4933 550205 92 249 RF TA5401 CA3038A 550201 89 310 L1C
TA2793 2N5070 550205 100 268 RF TA5402 CA3037 550201 80 316 L1C
TA2800 2N5109 550205 118 281 RF TA5402 CA3037A 550201 89 310 L1C
TA2808 2N4348 550204 149 526 PWR TA54558 C04001A 550203 30 479 Ca5/Ma5
TA2809 2N4347 550204 133 528 PWR TA54568 C04002A 550203 30 479 Ca5/Ma5
TA2819 2N5415 550204 292 336 PWR TA5457 CA3045 550201 177 341 L1C
TA2819A 2N5416 550204 292 336 PWR TA5458 CA3046 550201 177 341 L1C
TA2827 2N5071 550205 105 269 RF TA5460AV C04016AK 550203 84 479 Ca5/Ma5
TA2828 2N4932 550205 92 249 RF TA5507 CA3050 550201 329 361 L1C
TA2836 2N5441 550206 55 593 TRI TA5513 CA3026 550201 226 388 L1C
TA2837 2N5442 550206 55 593 TRI TA5516 CA3039 550201 122 343 LIC
TA2838 2N5444 550206 55 593 TRI TA5517C CA3064 550201 490 396 L1C
TA2839 2N5445 550206 55 593 TRI TA5519V C04008AK 550203 49 479 Ca5/Ma5
TA2840 3N128 550201 634 309 Ma5/FET TA5523A CA3048 550201 247 377 L1C
TA2845 1N5214 550206 270 245 RECT TA5537 CA3049T 550201 234 611 L1C
TA2845A 1N5213 550206 270 245 RECT TA5551 C04000AK 550203 30 479 Ca5/Ma5
TA2845B 1N5212 550206 270 245 RECT TA5553 C04007AK 550203 43 479 Ca5/Ma5
TA2845C 1N5211 550206 270 245 RECT TA5554 C04001AK 550203 30 479 Ca5/Ma5
TA2871 2N4240 550204 304 138 PWR TA5555 C04002AK 550203 30 479 Ca5/Ma5
TA2875 2N4440 550205 87 217 RF TA55568 C04006AK 550203 37 479 Ca5/Ma5
TA2892 T2300A 550206 33 470 TRI TA5561 CA3047A 550201 61 360 L1C
TA2829A T2302A 550206 33 470 TRI TA5562 CA3047 550201 61 360 L1C
TA2893 T23008 550206 33 470 TRI TA5578V C04014AK 550203 74 479 Ca5/Ma5
TA2893A T23028 550206 33 470 TRI TA5579V C04015AK 550203 79 479 Ca5/Ma5
TA2894 T23000 550206 33 470 TRI TA5580V C04018AK 550203 95 479 Ca5/Ma5
TA2894A T23020 550206 33 470 TRI TA5615A CA3059 550201 338 490 L1C
TA2911 2N5294 550204 61 322 PWR TA5625A CA3066 550201 533 466 L1C
TA5032 CA3000 550201 288 121 L1C TA5628C CA3089E 550201 455 561 L1C
TA5033 CA3001 550201 294 122 L1C TA5634 C02154 550201 421 402 L1C
TA5035 CA3002 550201 256 123 L1C TA5645 CA3060E 550201 38 537 L1C
TA5037 CA3004 550201 300 124 L1C TA5649A CA3070 550201 549 468 LIC
TA5112 CA3005 550201 306 125 L1C TA5652V C04019AK 550203 100 479 Ca5/Ma5
TA5112A CA3006 550201 306 125 L1C TA5655 CA3051 550201 329 361 L1C
TA5158 CA3015 550201 80 316 L1C TA5672 CA3052 550201 432 387 L1C
TA5164 C02150 550201 409 308 L1C TA5675V C04013AK 550203 68 479 Ca5/Ma5
TA5183A CA3033A 550201 61 360 L1C TA5684V C04017AK 550203 90 479 Ca5/Ma5
TA5213 CA3011 550201 262 128 L1C TA5690X C02501 E 550201 403 392 L1C
TA5214 CA3012 550201 262 128 L1C TA57028 CA3071 550201 549 468 L1C
TA5219 CA3021 550201 276 243 L1C TA5716W C04057AO 550203 272 635 Ca5/Ma5
TA5220 CA3020 550201 268 339 L1C TA5718 CA3054 550201 226 388 L1C
TA5222 CA3018 550201 160 338 L1C TA5721 X C02500E 550201 403 392 L1C
TA5222A CA3018A 550201 160 338 LIC TA5733 CA3053 550201 318 382 L1C
TA5225 CA3019 550201 118 236 L1C TA5752 CA3067 550201 533 466 L1C
TA5234 CA3013 550201 471 129 L1C TA5757 CA3076 550201 479 430 L1C
TA5235 CA3014 550201 471 129 LIC TA57588 CA3085 550201 375 491 L1C
TA5253 CA3016 550201 80 316 L1C TA5785X C02503E 550201 403 392 L1C
TA5254 CA3030 550201 80 316 L1C TA5786X C02502E 550201 403 392 L1C
TA5261 C02153 550201 409 308 L1C TA5790 CA30600 550201 38 537 L1C
TA5277 CA3001 550201 294 122 L1C TA5795 CA3058 550201 338 490 L1C
TA5278 CA3029 550201 80 316 L1C TA5797 CA741T 550201 74 531 L1C
TA5282 CA3004 550201 300 124 L1C TA5799A CA3084 550201 134 482 L1C
TA5315 CA3043 550201 466 331 L1C TA5807 CA3078T 550201 52 535 L1C
TA5316 CA3041 550201 498 318 L1C TA5814 CA3065 550201 514 412 L1C
TA5317A CA3042 550201 506 319 L1C TA5816 CA3080 550201 30 475 L1C
TA5327C CA3040 550201 282 363 L1C TA5820 CA3541D 550201 395 536 L1C
505
DATA DATA
Dev. No. BOOK Page Dev. No. BOOK Page
No. No. Line No. No. Line
Vol. No. Vol. No.
TA5842 CA3088E SSD201 446 560 L1C TA6094 CA3183AE SSD201 166 532 L1C
TA5855A CA30910 SSO201 383 534 L1C TA6111 CA1458T SSO201 74 531 L1C
TA5858 CA3081 SSO201 126 480 L1C TA6111A CA1558T SSO201 74 531 L1C
TA5866 CA3075 SSO201 462 429 L1C TA6116V C04046AK SSO203 226 637 COS/MOS
TA5867V C04023AK SSO203 61 479 COS/MOS TA6116W C04046AO SSO203 226 637 CDS/MDS
TA5867W C04023AO SSO203 61 479 COS/MDS TA6116X C04046AE SSO203 226 637 CDS/MDS
TA5867X C04023AE SSO203 61 479 CDS/MDS TA6119 CA3093E SSO201 152 533 L1C
TA5872V C04027AK SSO203 135 503 CDS/MDS TA6122C CA3100T SSO201 98 625 L1C
TA5873V C04028AK SSO203 141 503 CDS/MDS TA61448 CA3121 E SSO201 567 688 L1C
TA5876W C04035AO SSO203 177 568 CDS/MDS TA6145V C04039AK SSO-203 184 613 COS/MOS
TA5878W C04034AO SSO-203 169 575 CDS/MDS TA6145W C04039AO SSO-203 184 613 CDS/MDS
TA5884AV C04022AK SSO203 115 479 CDS/MDS TA6145X C04039AE SSO203 184 613 CDS/MDS
TA5884W C04022AO SSO-203 115 479 CDS/MDS TA6153W C04052AO SSO-203 258 Prel. CDS/MDS
TA5884AX C04022AE SSO-203 115 479 CDS/MDS TA6154W C04053AO SSO-203 258 Pre!. COS/MDS
TA5897X C02501E SSO-201 698 392 L1C TA61550 CA3123E SSO-201 450 631 L1C
TA5898X C02503E SSO-201 698 392 L1C TA6157 CA747CE SSO-201 74 531 L1C
TA5899X CD2500E SSO-201 698 392 L1C TA6157A CA747E SSO-201 74 531 L1C
TA5900X C02502E SSO-201 698 392 L1C TA6164 CA3094T SSO-201 346 598 L1C
TA59128 CA3072 SSO-201 549 468 L1C TA6165A CA3094AT SSO-201 346 598 L1C
TA5914C CA3068 SSO201 525 467 L1C TA6181 CA3146E SSO-201 166 532 L1C
TA5920V C04025AK SSO-203 30 479 CDS/MDS TA6182 CA3118T SSO-201 166 532 L1C
TA5920W C04025AO SSO203 30 479 CDS/MDS TA6183 CA3183E SSO-201 166 532 L1C
TA5920X C04025AE SSO-203 30 479 CDS/MDS TA6189 CA3099E SSO-201 359 620 L1C
TA5925V C04029AK SSO-203 146 503 CDS/MDS TA6220 CA2111AE SSO-201 520 612 L1C
TA5925W C04029AO SSO203 146 503 CDS/MDS TA6228 CA3102E SSO-201 234 611 L1C
TA5925X C04029AE SSO-203 146 503 CDS/MDS TA6237V C04054AK SSO-203 266 634 CDS/MDS
TA5926V C04036AK SSO-203 184 613 CDS/MDS TA6237W C04054AO SSO-203 266 634 CDS/MDS
TA5926W C04036AO SSO-203 184 613 COS/MOS TA6237X C04054AE SSO-203 266 634 CDS/MDS
TA5932 CA3090Q SSO-201 440 502 Lie TA6238V C04055AK SSO-203 266 634 COS/MOS
TA5940V C04030AK SSO-203 153 503 COS/MOS TA6238W C04055AO SSO-203 266 634 COS/MOS
TA5940W C04030AO SSO-203 153 503 COS/MDS TA6238X C04055AE SSO-203 266 634 CDS/MDS
TA5940X C04030AE SSO-203 153 503 CDS/MDS TA6243X CA3120E SSO-201 581 691 L1C
TA5951V C04038AK SSO-203 164 503 CDS/MDS TA6246V C04049AK SSO-203 251 599 CDS/MDS
TA5951W C04038AO SSO-203 164 503 CDS/MDS TA6246W C04049AO SSO-203 251 599 CDS/MDS
TA5951X C04038AE SSD-203 164 503 CDS/MDS TA6246X C04049AE SSO-203 251 599 CDS/MDS
TA5957 CA3018L SSO-201 605 515 L1C TA6250V C04048AK SSO-203 244 636 COS/MDS
TA5958 CA3039L SSO-201 605 515 L1C TA6250W C04048AO SSO-203 244 636 COS/MDS
TA5959 CA3045L SSO-201 605 515 L1C TA6250X CD4048AE SSO-203 244 636 COS/MDS
TA5960 CA3054L SSD-201 605 515 L1C TA6251V C04056AK SSO-203 266 634 CDS/MDS
TA5963V C04032AK SSO203 164 503 CDS/MDS TA6251W C04056AO SSO-203 266 634 CDS/MDS
TA5963W C04032AO SSO-203 164 503 CDS/Mas TA6251 x C04056AE SSO-203 266 634 CDS/MDS
TA5963X C04032AE SSO-203 164 503 CDS/MDS TA6265V C04050AK SSO-203 251 599 CDS/MDS
TA5964 CA3015L SSO-201 605 515 L1C TA6265W CD4050AD SSO-203 251 599 caS/MDS
TA5975 CA3028AL SSO-201 605 515 L1C TA6265X C04050AE SSO-203 251 599 CDS/MDS
TA5978 CA3084L SSO-201 605 515 L1C TA6269X CA3095E SSO-201 189 591 L1C
TA5979 CA741 L SSO201 605 515 L1C TA6270X CA3096E SSO-201 141 595 L1C
TA5989 C04031AO SSO-203 158 569 caS/MDS TA6270AX CA3096AE SSD-201 141 595 L1C
TA5998 CA3083 SSO201 130 481 L1C TA6281 X CA3097E SSO-201 199 633 L1C
TA5999W C04037AO SSO-203 191 576 CDS/MDS TA6281 X CA3097E SSO-201 199 633 L1C
TA6007W C04051AO SSO203 258 Pre!. CDS/MDS TA6289X CA 747CE SSO201 74 531 L1C
TA6010V C04047AK SSO-203 233 623 CDS/MDS TA6289AX CA 747E SSD-201 74 531 L1C
TA6010W C04047AO SSO-203 233 623 CDS/MDS TA6306 CA3401 E SSD-201 113 630 L1C
TA6010X C04047AE SSD-203 233 623 CDS/MDS TA6309 CA3049L SSO-201 605 515 L1C
TA6011 C04042AO SSO-203 210 589 CDS/MDS TA6314T CA1458T SSO-201 74 531 L1C
TA6014 CA3068 SSO-201 525 467 L1C TA6314T CA1558T SSD-201 74 531 L1C
TA6018V C04026AK SSO-203 126 503 CDSIMDS TA6319 CA3126Q SSO-201 565 Pre!. L1C
TA6018W C04026AO SSO-203 126 503 CDS/MDS TA6330T CA3094AT SSO-201 346 598 L1C
TA6018X C04026AE SSD-203 126 503 CDS/MDS TA6368X CA3600E SSO-201 213 619 L1C
TA6029 CA741CT SSO-201 74 531 L1C TA6379X CA3072 SSO-201 549 468 L1C
TA6031V C04041AK SSO-203 203 572 CDS/MDS TA6389T CA3080 SSO-201 30 475 LIC
TA6031W C04041AO SSO-203 203 572 CDS/MDS TA6391W C04066AO SSO-203 303 Pre!. CDS/MDS
TA6031X C04041AE SSO-203 203 572 CDS/MDS TA7003 2N5470 SSO-205 140 350 RF
TA6033 CA3082 SSO-201 126 480 L1C TA7005 2N6249 SSO-204 385 523 PWR
TA6037 CA748CT SSO201 74 531 L1C TA7006 2N6250 SSO204 385 523 PWR
TA5037A CA748T SSO201 74 531 L1C TA7007 2N6251 SSO-204 385 523 PWR
TA6062W C04045AO SSO-203 220 614 CDS/MDS TA7032 3N138 SSO-201 639 283 MDS/FET
TA6062X C04045AE SSO-203 220 614 CDS/MDS TA7047 2N4427 SSO-205 81 228 RF
TA6065V C04040AK SSO-203 197 624 CDS/MaS TA7048 1N5218 SSO-206 270 245 RECT
TA6065W C04040AO SSO-203 197 624 CDS/MDS TA7048A 1N5217 SSO-206 270 245 RECT
TA6065X C04040AE SSO-203 197 624 CDS/MDS TA70488 1N5216 SSO-206 270 245 RECT
TA6080V C04043AK SSO-203 214 590 CDS/MDS TA7048C lN5215 SSO-206 270 245 RECT
TA6080W C04043AO SSO203 214 590 CDS/Mas TA7078 40606 SSO207 168 600 RF
TA6080X C04043AE SSO-203 214 590 CDS/MDS TA7079 40577 SSO-207 148 297 RF
TA6081V C04044AK SSO203 214 590 CDS/MDS TA7080 40578 SSO-207 155 298 RF
TA6081W C04044AO SSO-203 214 590 CDS/MDS TA7090 JAN2N3866 SSO207 81 RF
TA6081X C04044AE SSO203 214 590 CDSIMDS TA7121 2N5320 SSO-204 429 325 PWR
TA6084 CA3146AE SSO-201 166 532 L1C TA7122 2N5321 SSO204 429 325 PWR
TA6091 CA3118AT SSO-201 166 532 L1C TA7124 2N5322 SSO-204 429 325 PWR
506
DATA- DATA-
Dav. No. BOOK Page Dav. No. BOOK Page
Vol. No. Vol. No.
TA7125 2N5323 SSD-204 429 325 PWR TA7426 2N5443 SSD-206 55 593 TRI
TA7130A 2N5805 SSD-204 379 407 PWR TA7428 2N5567 SSD-206 92 457 TRI
TA7146 2N5090 SSD-205 109 270 RF TA7431 2N5572 SSD-206 85 458 TRI
TA7149 40600 SSD-201 712 333 MDS/FET TA7434 S2600B SSD-206 156 496 SCR
TA7150 40603 SSD-201 720 334 MDS/FET TA7435 S2600D SSD-206 156 496 SCR
TA7151 40604 SSD-201 720 334 MOS/FET TA7441 T6401B SSD-206 107 459 TRI
TA7155 2N5293 SSD-204 61 322 PWR TA7442 T640lD SSD-206 107 459 TRI
TA7156 2N5295 SSD-204 61 322 PWR TA7452 S3705M SSD-206 187 354 SCR
TA7189 40602 SSD-201 712 333 MOS/FET TA7453 S3706M SSD-206 187 354 SCR
TA7205 2N5921 SSD-205 181 427 RF TA7454 D2601EF SSD-206 303 354 RECT
TA7238 2N5262 SSD-204 423 313 PWR TA7455 D2601DF SSD-206 303 354 RECT
TA7244 3N139 SSD-201 643 284 MOS/FET TA7456 D2600EF SSD-206 303 354 RECT
TA7262 40601 SSD-201 712 333 MOS/FET TA7461 T6411B SSD-206 107 459 TRI
TA7264 2N5954 SSD-204 170 675 PWR TA7462 T6411D SSD-206 107 459 TRI
TA7265 2N5955 SSD-204 170 675 PWR TA7463 S2620B SSD-206 156 496 SCR
TA7266 2N5956 SSD-204 170 675 PWR TA7464 S2620D SSD-206 156 496 SCR
TA7272 2N5783 SSD-204 34 413 PWR TA7467 T4101M SSD-206 92 457 TRI
TA7274 3N141 SSD-201 667 285 MOS/FET TA7468 T4100M SSD-206 85 458 TRI
TA7275 3N143 SSD-201 634 309 MOS/FET TA7477 2N5913 SSD-205 146 423 RF
TA7291 2N5786 SSD-204 34 413 PWR TA7487 2N5920 SSD-205 175 440 RF
TA7303 2N5180 SSD-205 130 289 RF TA7500 2N5754 SSD-206 28 4111 TRI
TA7306 3N142 SSD-201 648 286 MOS/FET TA7501 2N5755 SSD-206 28 414 TRI
TA7313 2N5494 SSD-204 90 353 PWR TA7504 T6420B SSD-206 55 593 TRI
TA7314 2N5495 SSD-204 90 353 PWR TA7505 T6420D SSD-206 55 593 TRI
TA7319 2N5179 SSD-204 124 288 RF TA7513 2N5838 SSD-204 356 410 PWR
TA7322 2N5189 SSD-204 418 296 PWR TA7514 40964 SSD-205 351 581 RF
TA7323A 2N5672 SSD-204 481 383 PWR TA7530 2N5839 SSD-204 356 410 PWR
TA7327 JANTX2N3866 SSD-207 81 RF TA7532 2N5919A SSD-205 169 505 RF
TA7328 JANTX2N3553 SSD-207 80 RF TA7534 2N6354 SSD-204 469 582 PWR
TA7329 JANTX2N3375 SSD-207 80 RF TA7542 S3800MF SSD-206 199 639 ITR
TA7337 2N6032 SSD-204 487 462 PWR TA7543 S3800M SSD-206 199 639 ITR
TA7337A 2N6033 SSD-204 487 462 PWR TA7543 S2060Q SSD-206 138 654 SCR
TA7352 3N153 SSD-201 659 320 MOS/FET TA 7545 S2060Y SSD-206 138 654 SCR
TA7353 3N152 SSD-201 654 314 MOS/FET TA7546 S2060F SSD-206 138 654 SCR
TA7354 JAN2N4440 SSD-207 80 RF TA7547 T4121B SSD-206 92 457 TRI
TA7355 JANTX2N4440 SSD-207 80 RF TA7548 T4121D SSD-206 92 457 TRI
TA7358 JANTX2N5071 SSD-207 81 RF TA7549 T4121M SSD-206 92 457 TRI
TA7360 JAN2N5071 SSD-207 81 RF TA7550 T4120B SSD-206 85 458 TRI
TA7361 40605 SSD-205 318 389 RF TA7551 T4120D SSD-206 85 458 TRI
TA7364 T2800B SSD-206 69 364 TRI TA7554 2N6178 SSD-204 435 562 PWR
TA7365 T2800D SSD-206 69 364 TRI TA7555 2N6179 SSD-204 435 562 PWR
TA7367 2N5918 SSD-205 164 448 RF TA7556 2N6180 SSD204 435 562 PWR
TA7374 3N159 SSD201 675 326 MOS/FET TA7557 2N6181 SSD-204 435 562 PWR
TA7375 3N154 SSD-201 662 335 MOS/FET TA7563 S6200B SSD-206 210 418 SCR
TA8385 2N6102 SSD-204 121 485 PWR TA7579 T2313A SSD-206 28 414 TRI
TA7386 2N6103 SSD-204 121 485 PWR TA7580 T2313B SSD-206 28 414 TRI
TA7399 40673 SSD-201 745 381 MOS/FET TA7581 T2313D SSD-206 28 414 TRI
TA7401 D3202U SSD-206 350 577 DIAC TA7582 2N5757 SSD206 28 414 TRI
TA7403 40836 SSD-205 298 497 RF TA7582 T2313M SSD-206 28 414 TRI
TA7404 S2800B SSD-206 166 501 SCR TA7583 T6401M SSD-206 107 459 TRI
TA7405 S2800D SSD-206 166 501 SCR TA7584 T6411M SSD-206 107 459 TRI
TA7408 2N5914 SSD-205 152 424 RF TA7588 40965 SSD-205 351 581 RF
TA7409 2N5915 SSD-205 152 424 RF TA7589 2N5994 SSD-205 19'3 453 RF
TA7410 2N6212 SSD-204 312 507 PWR TA7590 2N3650 SSD-206 238 408 SCR
TA7411 2N5916 SSD-205 158 425 RF TA7591 2N3651 SSD-206 238 408 SCR
TA7420 2N5840 SSD-204 356 410 PWR TA7592 2N3652 SSD-206 238 408 SCR
507
DATA DATA
Day. No. BOCK Page Dev. No. BOOK Page
Vol. No. Vol. No.
TA7593 2N3653 SSD206 238 408 SCR TA7988 S2060A SSD-206 138 654 SCR
TA7599 S6220B SSD-206 210 418 SCR TA7989 S2060B SSD206 138 654 SCR
TA7600 S6220D SSD-206 210 418 SCR TA7990 S2060C SSD-206 138 654 SCR
TA7601 S6220M SSD-206 210 418 SCR TA7991 S2060D SSD206 138 654 SCR
TA7602 T6421B SSD-206 107 459 TRI TA7993 2N6265 SSD205 228 543 RF
TA7603 T6421D SSD206 107 459 TRI TA7994 2N6266 SSD205 234 544 RF
TA7604 T6421M SSD206 107 459 TRI TA7995 2N6267 SSD-205 240 545 RF
TA7614 T4104B SSD-206 99 443 TRI TA7995A 2N6269 SSD205 246 546 RF
TA7615 T4104D SSD206 99 443 TRI TA7996 D1201F SSD206 278 495 RECT
TA7616 T4114B SSD-206 99 443 TRI TA7999 40820 SSD-201 724 464 MOS/FET
TA7617 T4114D SSD206 99 443 TRI TA8000 40821 SSD201 724 464 MOS/FET
TA7618 T4103B SSD206 99 443 TRI TA8001 40822 SSD-201 732 465 MOS/FET
TA7619 T4103D SSD-206 99 443 TRI TA8002 40823 SSD-201 732 465 MOS/FET
TA7620 T4113B SSD-206 99 443 TRI TA8004 2N6077 SSD-204 318 492 PWR
TA7621 T4113D SSD-206 99 443 TRI TA8005 2N6079 SSD204 318 492 PWR
TA7626A HC2000H SSD-204 555 566 HYB TA8007 2N6479 SSD-204 454 702 PWR
TA7642 T4105B SSD-206 99 443 TRI TA8007B 2N6480 SSD204 454 702 PWR
TA7643 T4105D SSD206 99 443 TRI TA8100 2N6481 SSD-204 454 702 PWR
TA7644 T4115B SSD-206 99 443 TRI TA8100B 2N6482 SSD204 454 702 PWR
TA7645 T4115D SSD206 99 443 TRI TA8104 40915 SSD-205 325 574 RF
TA7646 T6405B SSD-206 114 487 TRI TA8158 S3703SF SSD206 194 522 SCR
TA7647 T6405D SSD206 114 487 TRI TA8159 S3702SF SSD-206 194 522 SCR
TA7648 T6415B SSD-206 114 487 TRI TA8160 D2103SF SSD-206 298 522 RECT
TA7649 T6415D SSD-206 114 487 TRI TA8161 D2103S SSD-206 298 522 RECT
TA7650 T6405B SSD-206 114 487 TRI TA8162 D2101S SSD206 298 522 RECT
TA7651 T6405D SSD-206 114 487 TRI TA8172 40970 SSD-205 359 656 RF
TA7652 T6414B SSD206 114 487 TRI TA8197 T6400N SSD-206 55 593 TRI
TA7653 T6414D SSD-206 114 487 TRI TA8198 T6410N SSD206 55 593 TRI
TA7654 T2304B SSD-206 41 441 TRI TA8199 T6420N SSD206 55 593 TRI
TA7655 T2304D SSD-206 41 441 TRI TA8201 2N6388 SSD-204 538 610 PWR
TA7656 T2305B SSD206 41 441 TRI TA8202 2N6386 SSD-204 538 610 PWR
TA7657 T2305D SSD206 41 441 TRI TA8210 2N6106 SSD204 177 676 PWR
TA7669 3N187 SSD-201 690 436 MOS/FET TA8211 2N6108 SSD204 177 676 PWR
TA7670 S6420A SSD-208 218 578 SCR TA8212 2N6110 SSD204 177 676 PWR
TA7673 2N6078 SSD-204 318 492 PWR TA8231 2N6293 SSD204 177 676 PWR
TA7679 40837 SSD-205 298 497 RF TA8232 2N6291 SSD-204 177 676 PWR
TA7680 40941 SSD-205 342 554 RF TA8236 40936 SSD205 333 551 RF
TA7684 3N200 SSD-201 698 437 MOS/FET TA8242 40841 SSD201 739 489 MOS/FET
TA7686 40893 SSD205 304 514 RF TA8247 40887 SSD204 278 508 PWR
TA7706 2N6105 SSD-205 221 504 RF TA8248 40885 SSD-204 278 508 PWR
TA7707 2N6104 SSD205 221 504 RF TA8249 40886 SSD204 278 508 PWR
TA7740 2N6176 SSD-204 278 508 PWR TA8325 2N6486 SSD-204 226 678 PWR
TA7741 2N6107 SSD-204 177 676 PWR TA8326 2N6491 SSD-204 226 678 PWR
TA7743 SSD204 l>SD204 177 676 PWR TA8328 2N6489 SSD204 226 678 PWR
TA7752 T8430B SSD-206 130 549 TRI TA8330 2N6213 SSD204 312 507 PWR
TA7753 T8430D SSD206 130 549 TRI TA8331 2N6214 SSD-204 312 507 PWR
TA7754 T8430M SSD-206 130 549 TRI TA8340 41038 SSD205 397 679 RF
TA7755 T8440B SSD206 130 459 TRI TA8343 2N6478 SSD-204 83 680 PWR
TA7756 T8440D SSD-206 130 549 TRI TA8344 40894 SSD-205 309 548 RF
TA7757 T8440M SSD206 130 549 TRI TA8345 40895 SSD205 309 548 RF
TA7784 2N6288 SSD204 177 676 PWR TA8348 2N6385 SSD-204 532 609 PWR
TA7802 D12018 SSD206 278 495 RECT TA8349 2N6383 SSD-204 532 609 PWR
TA7803 D1201D SSD-206 278 495 RECT TA8352 2N6372 SSD-204 170 675 PWR
TA7804 D1201M SSD206 278 495 RECT TA8353 2N6373 SSD-204 170 675 PWR
TA7805 D1201N SSD-206 278 495 RECT TA8354 2N6374 SSD204 170 675 PWR
TA7806 D1201P SSD-206 278 495 RECT TA8357 T28508 SSD206 79 540 TRI
TA7821 S6400N SSD-206 218 578 SCR TA8358 T2850D SSD206 79 540 TRI
TA7823 S6410N SSD-206 218 578 SCR TA8405 2N6477 SSD-204 83 680 PWR
TA7825 S6420N SSD206 218 578 SCR TA8407 2N6268 SSD-205 246 546 RF
TA7852 2N5917 SSD205 158 425 RF TA8411 D2406A SSD-206 318 663 RECT
TA7920 2N5992 SSD-205 189 451 RF TA8412 D24068 SSD-206 318 663 RECT
TA7921 2N5993 SSD-205 194 452 RF TA8413 D2406D SSD206 318 663 RECT
TA7922 2N5995 SSD-205 205 454 RF TA8414 D2406M SSD-206 318 663 RECT
TA7923 2N5996 SSD-205 210 455 RF TA8415 D2412A SSD206 326 664 RECT
TA7936 40819 SSD-201 704 463 MOS/FET TA8416 D24128 SSD-206 326 664 RECT
TA7937 T84508 SSD206 130 549 TRI TA8417 D2412D SSD206 326 664 RECT
TA7938 T8450D SSD-206 130 549 TRI TA8418 D2412M SSD206 326 664 RECT
TA7939 T8450M SSD-206 130 549 TRI TA8419 D2520A SSD206 334 665 RECT
TA7941 40934 SSD205 329 550 RF TA8420 D25208 SSD206 334 665 RECT
TA7943 40909 SSD-205 321 547 RF TA8421 D2520D SSD206 334 665 RECT
TA7982 40940 SSD-205 337 553 RF TA8422 D2520M SSD-206 334 665 RECT
TA7984 D2540A SSD-206 345 580 RECT TA8425 R47M15 SSD-205 407 605 RF
TA7985 D25408 SSD206 345 580 RECT TA8428 2N6254 SSD-204 102 524 PWR
TA7986 D2540D SSD-206 345 580 RECT TA8429 2N6253 SSD-204 102 524 PWR
TA7987 D2540M SSD-206 345 580 RECT TA8430 2N6258 SSD-204 141 525 PWR
508
DATA OATA-
Comrn. File Product Comm. File Product
Dey. No. BOOK Page Dav. No. BOOK Page
No. No. Line No. No. line
Vol. No. Vol. No.
TA8431 2N6257 550-204 141 525 PWA TA8650 41028 550-205 390 640 AF
TA8432 2N6259 550-204 149 526 PWA TA8651A HC2500 550-204 749 681 HYB
TA8433 2N6261 550204 45 527 PWA TA8656 2N3656 550206 245 724 5CA
TA8434 2N6260 550-204 45 527 PWA TA8657 2N3658 550206 245 724 5CA
TA8435 2N6262 550204 133 528 PWA TA8709 2N6468 550204 170 675 PWA
TA8436 2N6264 550204 69 529 PWA TA8710 2N6467 550-204 170 675 PWA
TA8437 2N6263 550-204 69 529 PWA TA8712 A47M10 550205 407 605 AF
TA8439 40898 550-205 313 538 AF TA8713 A47M13 550-205 407 605 AF
TA8440 40899 550-205 313 538 AF TA8719 41008 550205 373 616 AF
TA8442 2N6472 550204 217 677 PWA TA8720 41009 550-205 373 616 AF
TA8443 2N6471 550-204 217 677 PWA TA8721 41010 550-205 373 616 AF
TA8444 2N6473 550204 177 676 PWA TA8722 2N6476 550-204 177 676 PWA
TA8445 2N6475 550-204 177 676 PWA TA8723 2N6474 550204 177 676 PWA
TA8485 2N6387 550-204 538 610 PWA TA8724 2N6469 550204 217 677 PWA
TA8486 2N6384 550204 532 609 PWA TA8726 2N6470 550204 217 677 PWA
TA8493 40971 550-205 359 656 AF TA8746 2N6393 550-205 270 628 AF
TA8504 T2500B 550-206 49 615 TAl TA8747 2N6390 550-205 261 626 AF
TA8505 T25OO0 550-206 49 615 TAl TA8748 ACA2oo3 550-205 261 626 AF
TA8559 40954 550-205 346 579 AF TA8749 2N6391 550205 265 627 AF
TA8581 40955 550205 346 579 AF TA8750 ACA2oo5 550205 265 627 AF
TA8562 40967 550-205 355 596 AF TA8751 2N6392 550-205 270 628 AF
TA8563 40968 550205 355 596 AF TA8752 ACA2010 550-205 270 628 AF
TA8647 41025 550205 383 641 AF TA8761 40637A 550-205 295 655 AF
TA8648 41026 550-205 383 641 AF TA88455 538005 550206 199 639 ITA
TA8649 41027 550205 390 640 AF TA8846N 538005F 550-206 199 639 ITA
Electrical
SSO-207 Product
Type No. Specification No.
Page No. line
MIL-S-195001
JAN2N918 78 RF 301
JAN2N1482 26 PWR 207
JAN2N1486 26 PWR 180
JANTX2N1486 26 PWR 180
JAN2N1490 27 PWR 208
JAN2N1493 78 RF 247
JAN2N2016 27 PWR 248
JAN2N2857 79 RF 343
JANTX2N2857 79 RF 343
JAN2N3055 28 PWR 407

JAN2N3375 80 RF 341
JANTX2N3375 80 RF 341
JANTXV2N3375 80 RF 341
JAN2N3439 28 PWR 368

JAN2N3441 29 PWR 369
JAN2N3442 29 PWR 370
JAN2N3553 80 RF 341
JANTX2N3553 80 RF 341
JAN2N3585 30 PWR 384
JAN2N3772 30 PWR 413
JAN2N3866 81 RF 398
JANTX2N3866 81 RF 398
JAN2N4440 80 RF 341
JANTX2N4440 80 RF 341
JAN2N5038 31 PWR 439

JAN2N5071 81 RF 442
JANTX2N5071 81 RF 442
JAN2N5109 82 RF 453
JANTX2N5109 82 RF 453
JAN2N5416 31 PWR 485
JAN2N5672 32 PWR 488
JAN2N5840 32 PWR 487

JAN2N5918 82 RF 473
JAN2N6213 33 PWR 461
Subject Index
DATA- Page DATA- Page

BOOK Nos. BOOK Nos.
A
AC-DC isolation (AN-4537) 206 449 Amplifier, FM detector. at preamplifier
AC line isolation (AN-6141) 206 474 integrated-circuit (technical data,
F;le Nos. 318. 3191 201 498.506
Active filter, integrated-circuit (File No. 537) 201 47
Amplifier. gain-controlled, integrated-circuit
AC voltage regulators. thyristors (AN3886) 206 416 202 95
IICAN-40721
Adders, scaling (leAN-SOlS) 202 45 202 145
Amplifier, if, integrated-circujt (ICAN-5036)
Admittance parameters, short-circuit (ICAN50221 202 113 Appl;cat;ons IICAN-50361 202 150
AGC !ICAN-65441 202 333 Characteristics (ICAN-5036) 202 148
294 Circuit description (ICAN-5036l 202 145
Alarm system, intrusion lICAN6294) 202
Operating modes (ICAN-50361 202 145
Alpha. total IAN62151 204 857 201 256
Technical data (File No. 1231
Aluminum TO-3 packages, hermeticity evaluation of Amplifier. narrow-band. tuned. integrated-circuit
IAN-6071l 207 56 IICAN5030) 202 142
Engineering problem (AN-6071) 207 57
Amplifier. d. integrated-circuit (ICAN-5296) 202 98.100
Failure analysis (AN-6071) 207 56
Fa;lure data IAN-6071l 207 56 Amplifier, servo, integrated-circuit (ICAN-5766) 202 198
Thermal-cycling test results tAN-6071 I 207 57 Amplifiers, integratedcircuit:
AM broadcast receivers (ICAN-6022) 202 319 Aud;o IICAN-5037. 57661 202 154.194
Dr;ver IICAN-57661 202 197
AM modulator, integrated-circuit (File No. 537) 201 48
Frequency-shaping (ICAN-5015) 202 44
AM radio. integrated circuit for (ICAN6022) 202 318 Operational 202 14-86
App!;cat;ons !ICAN60n) 202 319 Output IICAN-67241 202 345
Circuit description (ICAN6022) 202 318 Power IICAN-57661 202 191
AND-OR bi-phase pairs, COS/MOS triple R F I ICAN-53371 202 167
(technical data. File No. 5761 203 191 V;deo IICAN-50151 202 40
Amplification. soundcarrier (ICAN-6544) 202 333 W;de-band IICAN-5338. 5766. 59771 202 177.195
Amplifier. tint-control, integrated-circuit 199.205
Amplifier array, general-purpose. integrated-
circuit (technical data, File No. 5601 201 446 IICAN-67241 202 349
Amplifier array. integrated-circuit, (I CAN-4072) 202 88 Amplifier, twin-T, bandpass OCAN-5213) 202 43
Circuit applications (I CAN-4072) 202 92 Amplifier. video, integrated-circuit
Circuit description (ICAN-4072) 202 88 I ICAN-5037. 5338. 50151 202 157.186
Gain-frequency response (ICAN-40721 202 90 Amplitude modulation (AN-4421 I 205 453
Noise voltage and current (ICAN-4072) 202 92
202 AM receiver subsystem, integrated-circuit
Output swing vs. supply voltage (ICAN-4072) 92
(technical data, File Nos. 560. 561) 201 40,446.
Quick selection chart 201 14
455
Stability requirements (ICAN-4072) 202 90 Analog or digital signals, transmission and
Amplifier array. integrated-circuit. ac multiplexing of (lCAN-6601) 203 433
(technical data, File Nos. 377, 387) 201 247.432 AND-OR gates. COS/MOS, triple bi-phase pairs
Amplifier array, ultra-high-gain. wide-band, (technical data, File No. 576) 203 191
integrated-circuit (technical data. AND-OR select gate COS/MOS quad IICAN-66001 203 427
F;le No. 274) 201 243
AND-OR select gate, COS/MOS quad
Amplifiers. audio. circuits (File Nos. 642-6501 204 558635 (technical data, File No. 479) 203 100
Amplifier. broadband 1118-to-136-MHzl. Anthmetlc unit. COS/MOS {ICAN-6600l 203 427
4-watt IPEPI: CirCUit description (lCAN-6600l 203 427
Design considerations IAN-3749l 205 421 Operation (ICAN-66001 203 428
Load-mismatch test (AN-3749) 205 419 Performance data (ICAN-6600) 203 432
Output power and modulation (AN-3749) 205 419
Arithmetic arrays. COS/MOS (ICAN-6600) 203 427
Performance and adjustment (AN-37491 205 423
Anthmetic unit (lCAN-6210l 203 397
Amplifier. broadband. d, linear, push-pull.
150-watt PEP IAN-4591l 205 469 Arrays, integrated-circuit
Application notes on 202 88-106
Amplifier circuit, broadband. uhf (AN-60101 205 475
Technical data 201 118-254
Amplifier circuits. generalpurpose (AN-45901 202 409 Astable multivibrator. integrated-circuit
Amplifier, class B. integrated-circuit IICAN-4072.5641l 202 59.93
IICAN5296.57661 202 99: 193 Astable multivibrator, CaS/MaS (ICAN-62671 203 407
Amplifier. control, and special-function Attenuators (AN-4590) 202 408
integrated circuits: Audio amplifier, integrated-circuit (ICAN-50371 202 154
Application notes on 202 108-209 Capacitor-coupled cascaded circuits
Quick selection chart 201 16 IICAN-50371 202 157
Technical data 201 255-430 Circuit description (ICAN-50371 202 154
Amplifier, dc, integrated-circuit (ICAN50301 202 134 Direct-coupled cascaded circuits (ICAN-50371 202 155
Applications (ICAN-5030) 202 140 Technical data (File No. 126) 201 313
Circuit description (ICAN-5030) 202 134 Audio amplifiers, integrated-circuit (lCAN-5766) 202 194
Operat;on IICAN-50301 202 134
Audio amplifier, line-operated tAN-30651 204 770
Technical data (File No. 121) 201 288
Audio driver, integrated-circuit:
Amplifier. differential detector. dc amplifier.
Dual-supply circuit (I CAN-5037) 202 156
and voltage regulator, integrated-circuit
Single-supply circuit (ICAN-5037) 202 157
(Technical data, File No. 396) 201 490
Autodyne converter. integrated-circuit (I CAN-5337) 202 167
A mpl if ier-discrim inators. integrated-c ircuit
471 Automatic-fine-tuning systems, integratedcircuit
(technical data, File No. 129) 201
IICAN-58311 202 324
Amp!;f;er. feedback !ICAN-50301 202 141 Automatic shut-off and alarm system (ICAN-65381 202 272
Amplifier-filter. high-gain (ICAN-65381 202 273 Audio power transistors. special (technical data) 204 558-689
Subject Index

BOOK Nos. BOOK Nos.
Avalanche breakdown: Capture ratio IICAN-53801 202 315

Common*base IAN-6215) 204 856 Case-temperature effects (AN-4774) 205 473
Common-emitter (AN-62151 204 857
Case-temperature effects 207 71
Avalanche breakdown vol tage, rf 207 71
Characteristics of CaS/MOS integrated circuits
Avalanche multiplication (AN62151 204 856 (chart) 203 8
Chips (technical datal:
CaS/MOS integrated-circuit (File No. 517) 203 307
Linear integrated-circuit (File No. 516) 201 590
Power-transistor (File No. 632) 204 738
Choppers (AN-4590) 202 407
B Chroma amplifier, integrated-circuit
(technical data. File No. 468) 201 554
Balanced detector. integrated-circuit (ICAN-5831) 202 324 Chroma demodulator, integrated-circuit
Balanced modulator. integrated-circuit {/CAN-52991 202 102 (technical data, File Nos. 466, 468) 201 537,557
Ballasting circuits, solid-state (AN-3616) 204 778 Chroma signal processor, integrated-circuit
(technical data, File Nos. 466, 468) 201 534,550
Bandpass amplifiers (ICAN-52131 202 53
Chopper circuits, MOS-transistor (AN-3452) 202 365
Bandpass shaping IICAN-65441 202 333 Basic chopper circuits (AN-3452) 202 365
Base-to-emitter voltage 207 15 Basic MOS chopper circuits (AN-3452) 202 366
Bass roll-off (I CAN-584 11 202 330 Equivalent circuit of MOS chopper (AN-3452) 202 368
BCD data, conversion of (ICAN-6294) 202 291 Ideal chopper characteristics (AN-34521 202 365
Relative merits of available devices (AN-3452) 202 365
Beam-lead (sealed-junction) IC's (technical
Typical circuits (AN-3452) 202 370
data, File No. 515) 201 605
Use of MOS transistors in choppers (AN-3452) 202 366
Bilateral switch, COS/MOS quad (ICAN-6601l 203 433 Circuit factor charts for thyristors
Digital control of signal gain, frequency, (SCR's and Triacs, AN-35511 206 375
and impedance (ICAN-66011 203 438 Current-Ratio curves (AN3551) 206 375
Features (ICAN66011 203 433 Full-wave ac triac circuit (AN-3551) 206 376
Logic functions (ICAN-6601) 203 437 Full-wave dc SCR or Triac circuit (AN-35511 206 377
Multiplexing/demultiplexing (ICAN-6601) 203 438 Fullwave SCR circuit (AN-35511 206 375
Operation (ICAN-6601l 203 433 Per cent ripple in load (AN-35511 206 379
Sample-hold applications (ICAN-66011 203 442 Three-phase half-wave SCR circuit (AN-3551) 206 378
Switch and logiC;applications lICAN-6601) 203 437
Technical data (File No. 479) 203 84 Clocked D latch, COS/MOS quad
(technical data, File No. 589) 203 210
Binary counter (ICAN-6166) 203 369 Clock/timer, battery-operated,
Bi-phase pairs, AND-OR, COS/MOS (technical Digital-display, COS/MOS:
data, File No. 576) 203 191 Applications (ICAN-6733) 203 482
Bi-polarity comparator (ICAN-6732) 202 84 Circuit operation (ICAN-6733) 203 472
Bistable multivibrator (ICAN-5641) 202 61 Display-driver circuits (ICAN-6733) 203 474
Performance characteristics IICAN-6733) 203 472
Bridge circuits, SCR (AN-42421 206 438
Coaxial-line rf power amplifier IICAN-6733) 205 475
Bridge rectifier (AN-4673) 204 826
Coaxial-package transistors (ICAN-6733) 205 481
Broadband rf circuit design IAN-4421) 205 455
Collector current, reverse 207 15
Broadband rf operation (AN-4774) 205 472
Collector-to-emitter saturation voltage 207 15
Broadband rf power amplifier (AN-3755) 205 429
Collector leakage currents 207 15
Broadband transistor rf amplifier (AN37491 205 419
Bulk leakages 207 16
Broadband uhf amplifier IAN-6010) 205 479,483 Surface leakage 207 16
Broadband uhf circuit, design approach (AN-6010) 205 477
Color demodulator, integrated-circuit IICAN-67241 202 345
Broadcast receivers, AM (ICAN-60221 202 318 Application of (ICAN-6724) 202 352
Buffer, COS/MOS Quad, true/complement Demoqutation and matrix (ICAN-67241 202 346
(technical data, File No. 572) 203 203 Demodulator preamplifier lICAN-67241 202 348
Buffers/converters, COS/MOS hex Filtering capacitors lICAN-6724) 202 348
(technical data, File No. 479) 203 54 Output amplifiers lICAN-6724) 202 345
Buffer, output (ICAN-62101 Tint-control amplifier (ICAN-6724) 202 349
203 399
Color matrix, integrated-circult (ICAN-6724) 202 346
Bulk leakages 207 16
Burst (popcorn) noise, measurement of lICAN-67321 Color system, RGB (ICAN-67241 202 352
202 79
Pass-fail criteria (ICAN-6732) 202 82 Color TV receivers, if system for,
Test conditions (ICAN-67321 202 82 integrated-circuit (I CAN-6544) 202 338
Test configuration OCAN-6732) 202 79 Colpitts oscillator, integrated-circuit (ICAN-4072) 202 93
Test-system circuits lICAN-6732) 202 83 Common-mode gain (ICAN-S015) 202 38
Bus register, COS/MOS MSI, 8-stage Common-mode rejection (ICAN-5038) 202 161
Common-mode rejection ratio
(ICAN-5022, 5038, 50151 202 38,118,
161
Comparator;
Bi-polarity IICAN-67321 202 84
DC (ICAN-56411 202 61
C Micropower IICAN-66681 202 76
Phase IICAN-67161 203 465
Capacitor-input circuits, design of (AN-3659) 206 380 Commutating dv/dt (AN-61411 206 472
DATA- Page
BOOK Nos.
Constant-current sources (AN-4590) 202 408 Counters, CaS/MOS (technical data):

473 Binary, 7-stage (File No. 503) 203 120
Control circuits, general (AN-6141) 206
Decade IFile No. 5031 203 126-134
Controlled solder process 207 18 95-99
Divide-by-N IFile No. 4791 203
Control systems, triac (ICAN-6294) 202 294 Up/down, presellable IFile No 5031 203 146-152
Conversion, digital-to-analog (ICAN-60001 203 340 Counter/dividers, COS/MaS, applications of:
Converter, ringing-choke (AN-36161 204 779 Decade IICAN-61661 203
Cooking-range control (AN-6096) 206 462 Divide-by-81ICAN-61661 203
Design and function Counter-latch-timer control circuit (ICAN-6732) 203
Considerations (AN-6096) 206 462 Cross-modulation distortion (ICAN-5022) 202
Top-burner controls (AN-6096) 206 462
Crosstalk IICAN-61761 203
Oven/broiler controls (AN-60961 206 463
Central processor (AN-6096) 206 466 Crystal oscillators:
Bipolar integrated-circuit (ICAN-5030) 202
COS/Mas chips (technical data, File No. 517) 203 307-322
COS/MOS integrated-circuit IICAN-67161 203
COS/MOS chips; Current density, effect on reliability 207
Handling of (ICAN-60001 207 519
Storing of IICAN-60001 207 520 Current gain 207
Current limiting, foldback (AN-4558) 204
caS/MOS CD4000A slash-seriestypes
screened to MIL-STD-883 IRIC-102BI 207 524 Current mirrors (ICAN-6668) 202
Electrical-test and delta limits (RIC-102Bl 207 528 Current-ratio curves (SCR's and triacs, AN-3551) 206
Environmental sampling inspections (RIC-102B) 207 529 Currents, collector leakage 207
Final electrical tests (RIC-102B) 207 528
207 526 Current sourt;e, diode-transistor (lCAN-666B) 202
Ordering information (RtC-102B)
Part-number code (RIC-102B) 207 526 Curves, rf power-transistor power-frequency 205
Product-flow diagram (RIC-102B) 207 524
Screening levels, description of (RIC-102Bl 207 525
Total lot screening, description of (RIC-102Bl 207 527
CaS/MaS digital integrated circuits (Title pagel 203 1
Applications information 203 334-487
Functional diagrams 203 10-21
General features 203 22-24
Data-gathering and processing system (ICAN-6210) 203 392
CaS/MOS IC's for low-voltage Applications Arithmetic unit (ICAN-62101 203 397
(technical data, File Nos. 479, 5031 203 29.120 Control unit t1CAN-62101 203 401
CaS/MaS integrated circuits, functional diagrams 203 10-21 Description (ICAN-6210) 203 392
COS/MOS integrated circuits, general features Digital processor (ICAN-62101 203 394
IFile No. 4791 203 29 Input signal conditioning and
transmission (ICAN-6210) 203 393
CaS/MaS integrated circuits, high-reliability 207 179,182
Memmy IICAN-62101 203 396
CaS/MOS integrated circuits, typical Output buffer IICAN-62101 203 399
characteristics chart 203 8-9 Output transmitter (ICAN62101 203 399
COS/MOS life-test data 207 184 Receiver IICAN-62101 203 395,400
CaS/MaS logic gates noise immunity of flCAN-61761 203 384 DC amplifier, integrated-circuit (ICAN-50301 202 134
COSIMOS MIL-M-38510 CD4000A series types Applications IICAN-50301 202 140
Circuit description (ICAN-5030) 202 134
IRIC-1041 207 530
Operation (ICAN5030) 202 134
Electrical sampling inspection (R IC-1 04) 207 533
Technical data (File No. 1211 201 288
Environmental sampling inspection (RIC-104l 207 534
Final electrical tests (RIC-1041 207 533 DC power supply, ac voltage-regulated (AN3822) 206 413
Processing and screening requirements DC safe area 207 69
IRIC-1041 207 531 DC safe area (power transistors, AN4774) 205 471
Product classification guide (RIC-1041 207 534 Decade counters, CaS/MaS, 7-segment
Product flow diagram (RIC-1041 207 530 output IICAN-67331 203 473
Product-number code (RIC-1 041 207 534
Screening levels (RIC-1041 207 530 Decoder, COS/MOS, BCD-to-decimal
Specification numbers (RIC-104) 207 533 (technical data, File No. 5031 203 141
CaS/MaS power-supply considerations (ICAN-65761 203 422 Decoder-Drivers, MSI, BCD-to-7-segment (ICAN-62941 202 291
Fail-safe circuit HCAN-6294) 202 299
COS/MOS switch IICAN-60801 203 347
Logic description (ICAN-6294) 202 291
Counter, CaS/MaS binary/ripple, 12-stage Logic diagram (ICAN-62941 202 293
(technical data, File No. 624) 203 197 Multiplex operation (ICAN-6294) 202 299
Counter, COS/MOS. 21-stage (File No. 5721 203 206 Operating characteristics (ICAN-62941 202 294
Counters, CaS/MaS, applications of: Static-drive applications (ICAN-62941 202 296
Decade, 7-segment-output (ICAN-6733) 203 472 ,Technical data (File No. 392) 201 403
Divide-by-N (ICAN-67161 203 460 Decoder stereo multiplex, integrated-circuit
Divide-by-R IICAN-67161 203 464 (technical data, File No. 502) 201 440
Divide-by-12I1CAN-67331 203 483 Deflection circuit, magnetic (AN-30651 204 768
Divide-by-60 IICAN-67331 203 483
Delayed age IICAN-65441 202 333,334
Fixed, single-stage, divide-by-N Programmable,
multidecade, Divide-by-N (ICAN-649B) 203 417 Delta tests or limits 207 187
Counter, CaS/MaS, fixed and programmable, Demodulation color-signal (ICAN-6724) 202 346
Design of IICAN-64981 203 415 Demodulator, color, integrated-circuit lICAN-6724) 202 345
Counters, COS/MOS MSI, design and Demodulator preamplifier, integrated-
applications of lICAN-6166) 203 368 circuit (ICAN-67241 202 348
I\lOS. tlUUK Nos.
E
Derating curve, power-transistor 207 16 Economics, amplifier (AN-30651 204 769
Detection, sound-carrier (ICAN-6544l 202 333 Effect of temperature on silicon transistors 207 15
Diacs, silicon bidirectional: Electric heat application IICAN-6182l 202 254
Technical data (File No. 577) 206 350-351 Electric heat application (ICAN6182) 206 488
Use of for thyristor triggering (AN-4242) 206 437 207 72
Electromigration
Voltage-current characteristics (AN-4242) 206 438
Emitter ballasting (AN-4774) 205 472
Differential-amplifier array, dual independent,
Emitter ballast resistance (AN-4591) 205 463
integrated-circuit (technical data,
File Nos. 388,611) 201 226,234 Emitter-site ballasting 207 67,70
Differential amplifiers, integratedcircuit, Envelope detector (ICAN-50361 202 151
Basic configuration for llCAN-5380) 202 311 Epitaxial-base power transistors (selection chart) 204 13-15
Differential amplifiers, integrated-circuit Epitaxial-base power transistors, (technical datal 204 169
high-reliability types (technical data. 203 384
External noise (ICAN-61761
File Nos. 705, 714) 207 196,203
Differential/cascode amplifiers, integrated-circuit
Differentiators, integrated-circuit (ICAN5015) 202 45
Diffused-junction n-p-n power transistors
{technical datal 204 493 F
Diffusion current 207 16 206 451
False turn-on (of thyristors, AN-47451
Digital-clock prototypes, CaS/MaS IICAN-6733J 203 484 206 345
Fast-recovery silicon rectifiers (File No. 5801
Digital-display clock, CaS/MaS IICAN-6733) 203 472
Fast-turn-off silicon controlled rectifiers
Digital-display clock/watch confIguration, (Technical data, File No. 408) 206 238
CaS/MaS IICAN-6733J 203 483
Feedback amplifier, integratedcircuit, cascaded
Digital-display devices (ICAN-67331 203 476 RC-cQupled IICAN-50301 202 141
Digitaldisplay metering application, Feedback factor IICAN-58411 202 329
CaS/MaS IICAN-6733J 203 472 Feedback-type volume-control circuit (ICAN-58411 202 329
Digital-display timer, COS/MOS (ICAN-67331 203 472 Ferrite cores (AN-4591) 205 466
Digital frequency synthesizer, COS/MOS lICAN-67161 203 457 Filament pre-heatIng circuit (AN4537) 206 465
Digital meter applications, COS/MOS (lCAN-6733) 203 489 Filter, actIve, Integrated-cIrcuit (File No. 537) 201 47
Digital signals, transmission and Filters, Interstage (ICAN-53801 202 313
multiplexing of (ICAN-6601) 203 433
Final Qualification 207 107
Digital timer/clock/watch applications,
477 Flanged-case silicon rectifiers (technical
CaS/MaS IICAN-6733J 203
data, File Nos. 3, 5, 41, 91) 206 252,255,
Digitaltoanalog conversion, general 265,294
considerations (ICAN60aO) 203 342
Flasher circuit, thyristor (AN-45371 206 448
Digital-to-analog converter, COS/MOS (ICAN6080) 203 346
Flashover current (AN-45371 206 444
Digitaltoanalog switch, CaS/MaS (ICAN-6080l 203 342
Flip-flop, caS/Mas dual D-type:
Diode Array. integrated-circuit (ICAN-52991 202 101 Technical data (File No. 479) 203 68
Applications (ICAN-5299) 202 102 Use of in arithmetic unit IICAN-6600) 203 427
Circuit configuration (ICAN-52991 202 101
Operating characteristics (ICAN-52991 202 101 Flip-flop, COS/MOS dual J-K master-slave
201 118,122 (technical data, File No. 5031 203 135
Technical data (File Nos. 236, 3431
Diodes, light-emitting (ICAN-6733l 203 476 Fluorescent readouts. low-voltage vacuum
Display-lamp turn-on characteristics (ICAN-6294) 202 295 IICAN-6733) 203 480
Display output OCAN-62101 203 398 FM broadcast receivers, integrated circuits for
IICAN-52691 202 304
Dissipated-limited region 207 16
FM front-end cirCUits IIC's, ICAN5269, 5337) 202 174,306,
Double-tuned interstage filter (ICAN-53801 202 313
307
Down-conversion, heterodyne (ICAN6716) 203 457,467
FM if amplifier and detector, integrated-circuit
Down-converter, heterodyne, COS/MOS (ICAN-67161 203 458 309
IICAN-5269) 202
Driver amplifiers, integrated-circuit (ICAN-5766) 202 197
FM if amplifier, limiter, and diSCriminator,
Driver, audio, integrated circuit (ICAN5037) 202 156,157 integrated-circuit (ICAN-52691 202 308
Driver circuits for digital displays, types of FM if amplifier-limiter, detector, and audio
IICAN-6733J 203 474 preamplifier, integrated-circuit
Driver for 600-ohm balanced-line (lCAN-4072) 202 95 (technical data, File No. 429) 201 462
D-type latch, clocked, COS/MOS quad FM if strip integrated-circuit (ICAN-53801 202 315
(technical data, File No. 589) 203 210 FM if system, integrated-circuit
Dvldt suppression (in thyristor circuits, AN-4745) 206 451 (technical data, File No. 5611 201 455
Dual Darlington array, integratedcircuit FM receiver synthesizers, COS/MOS (ICAN-6716) 203 450
(technical data, File No. 2751 201 158 Prescaler system design (ICAN6716) 203 450
Dual differential amplifiers (technical System requirements (ICAN6716) 203 450
data, File No. 3611 201 329 FM synthesizer system, COS/MOS (ICAN-67161 203 459
Dynamic performance of AFT system (ICAN-58311 202 326 FM tuner, integrated-circuit (lCAN5269) 202 305
Subject Index
OATA- Page OATA- Page

BOOK Nos. BOOK Nos.
FM tuner using MOS-transistor rf amplifier (AN-34531 202 372 Ground-line noise (ICAN6716) 203 457
Circuit considerations (AN-3453) 202 372 Group A inspections, power-transistor 207 23
Performance (AN-3453) 202 374
Gyrator, integrated-circuit (File No. 537l 201 47
RF stage design IAN-34531 202 374
FM tuner using MOS-transistor rf amplifier and
mixe, IAN-35351 202 378
Conversion transconductance, calculation of
IAN-35351 202 382
Mixer-circuit considerations (AN-3535) 202 380
Oscillator-circuit considerations (AN-3535) 202 381
Over-all tuner performance (AN-35351 202 381 H
Performance features of MOS transistors
IAN-35351 202 378 Half-wave motor controls (AN-34691 206 364
RF-circuit considetations (AN-3535l 202 380 Unregulated IAN-34691 206 365
Tuner design (AN-35351 202 379 Regulated IAN-34691 206 366
Forward-bias second breakdown 207 13 Half-wave SCR circuit (AN-3551) 206 375
Forward-bias second breakdown, testing for (AN-45731 204 817 Harmonic distortion (ICAN-5037, 5038) 202 156,162
Four-quadrant multiplier, integrated-circuit Hartley oscillator, integrated-circuit (ICAN-4072) 202 93
IICAN-66681 202 69 Heat control IAN-36971 206 393
Frequency converter, three-phase 750-watt: Heater control, three-phase (AN-6054) 200 458
Circuit description (AN-46731 204 826 Heater regulation (AN-3822) 206 411
Inverter (AN-4673) 204 826
Hermetic rf transistor packages 207 69
Logic and driver circuits (AN-4673l 204 826
autput transformer (AN-4673) 204 828 Heterodyne down-conversion (ICAN-6716l 203 459,469
Performance (AN-4673) 204 830 High-current transistors (technical data,
Power supply for (AN4673) 204 826 File No. 462, 525, 5261 204 141,149
Frequency-modulation if amplifiers, integrated- 487
circuit IICAN-53801 202 311 High-frequency power transistors
Frequency multipliers, COS/MOS (ICAN-62671 203 414 (technical data, File No. 548) 205 309
Frequency-shaping amplifiers, integrated-circuit High-gain selective building blocks, evolution
IICAN-50151 202 44 IICAN-53801 202 312
Frequency synthesizer, COS/MOS low-power digital High-power generation (AN-3755l 205 431
IICAN-67161 203 419 High-,eliability COS/MOS CD4000A
Full adder, COS/MaS four-bit: slash-series types (RIC-102S) 207 524
Technical data (File No. 479) 203 49 High-reliability integrated circuits 207 175
Use in arithmetic unit (ICAN-6600l 203 427 Applications 207 176,178
Full-wave motor controls (AN-3469) 206 369 Device nomenclature 207 176,177
Regulated IAN-34691 206 370 General considerations 207 176
Umegulated IAN-34691 206 369 Life-test data, CaS/MaS 207 184
Manufacturing controls 207 176
MI L-M-38510 requirements 207 182
MI L-STD-883 requirements 207 178
Packages 207 176
Technical data, COS/MOS types 207 309-518
Technical data linear types 207 188-302
High-reliability power transistors 207 12
G Application notes on 207 47
Electrical considerations 207 12
Gain controlled amplifier, Integrated-circuit JAN and JANTX types 207 22,26-33
IICAN-40721 202 95 Processing and screening 207 21
Gain control, rf-amplifier (ICAN-5022) 202 120 Reliability considerations 207 12
Special rating considerations 207 12
Gain, current 207 15 207 26-46
Technical data on RCA types
Gain equalizer (for uhf amplifier, AN-6010) 205 479 High-reliability power transistors
Garage-door electronic control system (AN-3697) 206 391 (technical data) 207 26-46
Gate characteristics (of thyristors, AN-4242) 206 432 High-reliability rf power transistors 207 67
Gate, CaS/MaS dual complementary pair plus Design features 207 67
inverter (technical data, File No. 479) 203 43 JAN, JANTX, and JANTXV types 207 74
Gate, COS/MOS quad AND-OR select IICAN-61761 203 385 HR-series types, processing and screening 207 74
Premium and ultra-high-reliability types 207 76
Gate, CaS/MOS uqad exclusive-OR
Special rating concepts 207 69
(technical data, File No. 503) 203 153 78-174
Technical data 207
Gate-oxide protection circuit (ICAN-6218) 203 403 High-reliability solid-state devices
Gates, COS/MOS quad, 2-input NAND IICAN-66001 203 428 Commercial requirements 207 9
Gates, COS/MOS quad 2-input NOR IICAN-66001 203 428 I ndex to RCA types 207 6
Gates, CaS/MOS triple AND-OR bi-phase pairs I ntroduction to 207 9
(technical data, File No. 576) 203 191 Military and aerospace requirements 207 9
Military specifications for 207 10
Gates, high-speed IICAN-52961 202 97
Series IICAN-52961 202 98 High-reliability terms and definitions 207 185
Shunt (ICAN-52961 202 99 High-speed gates IICAN-52961 202 97
Series-shunt (ICAN-5296) 202 99 High-speed switching power transistors
Glass-passivated aluminum 207 68 (technical data) 204 404-689
Subject Index

BOOK Nos. BOOK Nos.
High-voltage application of silicon transistors Integrated-circuit chips, linear

(AN-35651 204 773 (technical data, File No. 516) 201 590-604
High-voltage generation (AN3780l 206 406 Integrated-circuit FM, IF amplifiers.
High-voltage power transistors (technical data) 204 278-402 design approaches for OCAN-53801 202 312
High-voltage power transistors selection chart 204 16-17 Integrated circuits, COS/MOS digital 203 1
High-voltage regulation (AN3780) 206 407 Integrated circuit, high-reliability 207 188
Hometaxial-base power transistors (selection chart) 204 10-12 Integrated circuits, linear (bipolar) 201 1
Hometaxialbase power transistors (technical datal 204 26-168 Integrators OCAN-50151 202 45
Horizontal-deflection SCR's and rectifiers Interfacing of COS/MOS devices OCAN-66021 203 445
(technical data, File Nos. 354, 522) 206 187,194 Active pull-ups IICAN-66021 203 447
Bipolar driving COS/MOS IICAN-66021 203 447
Horizontal deflection system: COS/MOS-bipolar HTL interface OCAN-66021 203 450
For color TV receivers (AN3780) 206 400 448
COS/MOS driving bipolar OCAN-66021 203
Hot-spot thermal resistance (AN4774) 205 472,474 COS/MOS-ECL/ECCSL interface IICAN-66021 203 454
Hotspot thermal resistance 207 69 COS/MOS-to-N-MOS interface IICAN-66021 203 456
Hotspotti~g (AN-47741 205 471 COS/MOS-to-P-MOS interface OCAN-66021 203 455
COS/MOS-TTL/DTL interface IICAN-66021 203 445
H Rseries rt power transistors Current sinking (ICAN-6602) 203 446,449
(techni.cal data) 207 83-118 Current sourcing (lCAN-6602) 203 446,449
Hybrid,circuit operational amplifier Level shifters IICAN-66021 203 454
(tedmical data, File No. 566) 204 744 Resistor, pull-up IICAN-66021 203 446
Hybr,.d circuits, power (technical data) 204 744-756 I nterim Qualification 207 187
HYbrid combiners (AN-3755) 205 433 Intermodulation distortion IICAN5037) 202 156
Hybrid combiner/dividers (AN4591) 205 467 I nterstage filters (ICAN-5380) 202 313
~vsteresis effect, lamp-dimmer (AN-3778J 206 396 Intrinsic transistor structure (AN-3755J 205 429
Intrusion alarm system, triac (ICAN-6538) 202 272
Inverters IAN-3065, AN-35651 204 768,773
Push-pull types IAN-36161 204 779
Threephase bridge types (AN-4673) 204 826
Isolation, ac-dc (AN4537) 206 449
IF-amplifier circuits, integrated types 97,129,

OCAN-5296, 5022, 5036, 5337, 53381 202 150,167,
172,187
J
IF amplifierlimiter, FM detector,
electronic attenuator, audio driver, inte~rated JAN and JANTX power transistors 207 20
circuit (technical data, File No. 412) 201 514 RCA types 207 20
IF amplifiE!r, integratedcircuit OCAN-5036) 202 145 Processing and screening 207 20
Applications IICAN-50361 202 150 JAN, JANTX, JANTXV rf power transistors
Characteristics (ICAN5036) 202 148 (technical datal 207 78-82
Circuit description (ICAN5036) 202 145 Junction temperature, effect on reliability 207 72
Operating modes (ICAN-5036) 202 145
IF amplifier-limiter. integrated-circuit highgain,
wideband (technical data, File No. 430) 201 479
IF strips, FM, integrated-circuit (lCAN-5380, 5337) 202 312,173,
174
IF system, FM, integrated-circuit
(technical data, File No. 561) 201 455 K
IF system, integrated-circuit, blackand-white
TV receiver OCAN-65441 202 341 Keyed AGC IICAN-65441 202 333,334
IF system, integratedcircuit, for color TV
receiver IICAN-65441 202 336
I HFM (I nstitute of HighF idelity Manufacturers)
IICAN-53371 202 173
Incandescents readouts (ICAN6733) 203 480
Induction motor controls (AN3697) 206 390
L
Inrush current (AN-45371 206 445
Inrush currents (AN-6141) 206 472 Ladder networks, resistance (ICAN-6080) 203 342
Insertion loss (ICAN5380) 202 315 Lampdimmer circuits (AN3778) 206 397
Institute of High-Fidelity Manufacturers (lHFM) Double-time constant types (AN-3778) 206 398
OCAN-53371 202 173 Singletimeconstant types (AN37781 206 397
Integralcycle heater control, proportional With over-voltage clamp (AN3822) 206 412
(AN-36971 206 393 Latch, COS/MOS quad, clocked D
Integrated-circuit arrays: (technical data, File No. 289) 203 210
Application notes on IICAN-4072, 5296, 52991 202 88-106 Latch COS/MOS quad, 3-state NAND R/S
Technical data 201 118-254 (technical data, File No. 590) 203 214
Subject Index

BOOK Nos. BOOK Nos.
Latch. CaS/MaS quad 3-state. NOR R/S Manufacturing Certification 207 186
(technical data, File No. 590) 203 214 Matched diodes, ultrafast. low-capacitance
Latched memory circuit IiCAN-63581 202 271 (technical data, File No. 343) 201 122
Level converters. COS/MOS IiCAN-67331 203 474 Matrix:
Level detector, COS/MOS IiCAN-6601l 203 444 Rectifier products 206 22
272 SC R products 206 18
Light-activated control (ICAN~6538) 202
389 Triac products 206 14
IAN-36971 206
387 Maximum usable gain (ICAN65441 202 338
Light control IAN-36971 206
Medium-power p-n-p transistors
Light-control circuits IAN-3778, AN-4242) 206 394.441
(technical data. File No. 216) 204 410
Basic triac-diac type IAN-37781 206 396
Double-time-constant types (AN-3778) 206 397 Medium-power transistors. hometaxial II types
Single-time-constant types IAN-37781 206 396 (technical data, File Nos. 527, 529) 204 45.69
Light dimmers, triac (AN-3778) 206 395 Mercury-arc lamps:
Circuits IAN-37781 206 398 Advantages of IAN-36161 204 777
Circuit description (AN-3778) 206 395 Ballasting of IAN-3616) 204 776
Hysteresis effect (AN-3778) 206 396 Characteristics of (AN-3616) 204 776
Range control (AN~3778) 206 397 Conventional ballasting methods (AN-3616) 204 778
RFI suppression (AN-3778) 206 398 Starting current for (AN-3616) 204 785
Trouble shooting IAN37781 206 398 Solid-state ballasting circuits (AN-3616) 204 778
Light-emitting diodes lICAN-67331 203 476 Memory. COS/MOS. preset-channel IICAN-67161 203 470
Light flasher, synchronous (lCAN~61821 202 260 Memory, integrated-circuit, latched (ICAN-65381 202 271
lICAN-61821 206 494 Memory sense amplifier, integrated-circLJit,
Lighting systems, relative merits dual~input (technical data, File No. 53'~11 201 395
of various types IAN-36161 204 776 Microstripline circuits (AN-4025) 205 445
Limiter, integrated-circuit (ICAN~5337l 202 167 Design of IAN-40251 205 446
Mounting arrangement (AN-40251 205 445
Limited~amplifier, integrated ';circuit
Performance of (AN-4025) 205 449
IICAN-5831.53381 202 324, 189
Microstripline oscillator (AN-3764) 205 442
Limiter characteristics (of IC rf amplifiers)
IICAN-5022) 202 126 Microwave power amplifiers (AN-37641 205 438
Biasing arrangements (AN~3764) 205 443
Limiting amplifier, integrated-circuit (ICAN-5338) 202 190
Coaxial~line types (AN-37641 205 439
Line Certification 207 186 Device and package construction (AN-37641 205 436
Line isolation, ac (AN~6141) 206 474 Design of IAN-37641 205 438
Linear amplifier, push-pull 150-watt, Large-signal amplifier operation (AN3764) 205 438
2-to-30-MHz IAN-4591l 205 469 Lumped-constant, common-base types (AN-3764) 205 444
Performance of practical circuits (AN4025) 205 449
Linear applications of rf power Power gain (AN37641 443
205
transistors (AN-37551 205 431
Pulse operation (AN-3764) 205 440
Linear IC arrays (technical datal 201 118-254 Reliability IAN-3764) 205 438
Linear IC chips (technical data, File No. 5161 201 590-604 Stripline type (AN-37641 205 440
Linear integrated circuits and 201 1 Microwave power oscillators (AN3764) 205 436
MOS devices 202 1 Basic configuration (AN~3764) 205 441
Index to 201 6 Design of IAN-37641 205 441
Packages and ordering information 201 23 Device and package construction (AN-3764) 205 436
Linear integrated circuits (CA3000 slash-seriestypes) Lumped-constant type (AN-37641 205 442
screened to MIL-STD-883 IRIC-202) 207 303 Microstripline type (AN-37641 205 442
Electrical sampling inspection (RIC~2021 207 307 Reliability IAN-37641 205 438
Environmental sampling inspection (RIC-2021 207 308 Wide-band type IAN-37641 205 442
Final electrical tests (RIC~2021 207 307 Military specifications 207 10
Ordering information (RIC~2021 207 305 MIL-M-38510 207 10
Part-number code (RIC-2021 207 305 MIL-S-19500 207 10
Product flow diagram (RIC-202) 207 303 Ml L-STD-883 requirements 207 178
Screening levels (RIC-2021 207 304 COS/MOS integrated circuits 207 179
Total lOt screening (RIC-202) 207 306 Linear integrated circuits 207 180
Linearity (AN~378Q) 206 401 Mixer capabilities (of integrated-circuit
Linear mixer, four-channel, rf amplifiers) lICAN-50221 202 123
integrated-circuit (ICAN-4072) 202 93 Mixers IAN-45401 202 411
Losser-type volume-control circuit OCAN-58411 202 329 Mixers, integrated-circuit:
Loudness contouring (ICAN-58411 202 330 8alanced lICAN-50221 202 123.129
Low~resistancesensor (AN-60961 206 465 Fourchannellinear (ICAN-40721 202 93
LTPD 207 187 Low-frequency (ICAN-5025) 202 281
LTPD sampl ing plans 207 23 Mixers, MOStransistor:
FM-receiver (AN-35351 202 378.380
Lumped-constant rf power amplifiers (AN-37641 205 444
VH F-receiver (AN-3341) 202 362
Lumped-constant rf power oscil1ator (AN-3764) 205 443
Molded-plastic transistors and thyristors
Lead forming techniques (AN-4124) 204 790
Lead forming techniques (AN-4124) 206 423
Mounting IAN-4124) 204 793
Mountino (AN41241 206 426
Thermal-resistance considerations (AN-41241 204 790
M Thermal-resistance considerations (AN-4124) 206 423
Types of packages (AN-4124) 204 789
Magnetic deflection circuit (AN~30651 204 768 Types of packages (AN-41241 206 422
Subject Index ua~ll,.. \..VIIII!:lUldllVII \1L.AI'Il-OLOIJ LU;; 410
Gate protection (AN--459'O) 202 404 Compensated circuit (ICAN6267) 203 411
Electrical requirements IAN-459Q) 202 406 Low-power circuit (ICAN-6267) 203 412
Applications (AN-4590l 202 403 Monolithic Darlington power transistors
MOS field-effect devices (see MOS field-effect (technical data, File Nos. 594, 563, 609, 610,
transistors) 693,6941 204 524-556
MOS field-effect transistors: Monostable multivibrator. integrated-circuit
Application notes on 202 354-418 (ICAN-5641l 202 61
Technical data 201 634-752 MOS chopper circuits (AN-3452) 202 370
MOS field-effect transistors, dual-gate-protected MOS/FET's (see MOS field-effect transistors)
types: MOS/FET integrated circuits. use in linear
Breakdown mechanism (AN-40181 202 384
circuit applications
Cross-modulation considerations IAN-4431) 202 400
Currenthandling capability (AN-40181 202 387
Electrical requirements (AN-4018) 202 386
Gateprotection diodes (AN-4018, AN-4431) 202 386,396,
400
Gate-protection methods (ANA018) 202 385
Input capacitance and resistance (AN-4018) 202 387 N
Noise factor (AN-40181 202 387
Operating conditions (AN-4431) 202 396
NAND gates, (positive logic)
Power gain (AN-40181 202 387 203 61
CaS/MaS (technical data, File No. 4791
RF applications IAN-4431l 202 396
Stability considerations (AN-44311 202 400 NAND R/S latch, 3-state COS/MOS
Static discharge, effect of (AN-4018) 202 384 quad (technical data, File No. 590) 203 214
MOS field-effect transistor, vhf applications: Noise immunity (of caS/MOS logic gates):
Biasing requirements (AN-3193) 202 354 (ICAN61761 203 384
Circuit configurations IAN3193) 202 354 Crosstalk noise immunity (ICAN-6176) 203 388
Operating-point selection fAN-3193) 202 356 External noise immunity, signal-line (ICAN6176) 203 385
AGC methods IAN-31931 202 357 Ground-line noise immunity (ICAN-6176) 203 388
R F considerations (AN-3193) 202 357 Power-supply noise immunity (ICAN-6176) 203 386
Use of in vhf circuit design (AN-31931 202 358 Types of noise (ICAN61761 203 384
MOS integrated circuit, Noise performance (of integrated-circuit
handling considerations OCAN60001 207 519 rf amplifiersJ (ICAN-50221 202 116
MOS-transistor vhf mixer, design of (AN-3193) 202 362 Noise-limited amplification llCAN-65441 202 333,336
Motor controller, integratedcircuit (ICAN-5766) 202 198 NOR gates, COS/MOS quad 2-input IICAN-6600l 203 428
Motor controls (AN-3469, AN-36971 206 364,390 NOR gates (positive logic), COS/MOS
Circuit components (AN-3469) 206 366-374 (technical data, File No. 479) 203 30
Full-wave types (AN-34691 206 369 NOR R/S latch, COS/MOS quad, 3-state
Half-wave types IAN-34691 206 366 (technical data, File No. 590) 203 214
Ratings and limitations (AN-3469) 206 370
Nuclear radiation, effects of 207 20
Regulated IAN34691 206 367,369
Three-phase IAN60541 206 460 Numitron devices ltCAN6294) 202 295
Unregulated (AN-34691 206 367,369 (ICAN6733J 203 480
MTTF or MTBF 207 187
Multiplex decoder, integrated-circuit, stereo
Multiplexer-decoder integrated-circuit,
linear (ICAN-66681 202 73
Multiplexer, integrated-circuit,
threechannel (File No. 537) 201 48 0
Multiplexing of analog and digital
signals (ICAN-66011 203 433 Oscillators (AN-4590) 202 411
Multiplex system, integrated-circuit, Oscillators, COS/MOS astable and monostable:
twochannel linear (ICAN-66GB) 202 65 Astable multivibrator circu,its (ICAN6267) 203 407
Applications IICAN-6267J 203 413
Multiplier, integratedcircuit (File No. 537) 201 49
Compensation for 5O-per-cent duty
Fourquadrant, analysis of (lCAN6668) 202 69
cycle (ICAN-62671 203 411
Multiplier, integrated-circuit, Monostable multivibrator circuits (ICAN6267) 203 410
fourquadrant (technical data, File No. 534) 201 383
Oscillator, COS/MOS crystalcontrolled (ICAN-6716) 203 468
Multiplier, integrated-circuit,
Oscillator, COS/MOS phase-locked,
two-quadrant (File No. 537) 201 48
voltage-controlled (ICAN6267) 203 413
Multistable circuits, precision (ICAN6668) 202 74
Oscillator, COS/MOS voltage-controlled
Multivibrators, COS/MOS (ICAN62671 203 413
Astable IICAN62671 203 407
Oscillators, integrated-circuit (ICAN-4072) 202 93
Monostable (ICAN-62671 203 407,410
Crystal-controlled (ICAN-5030J 202 140
One-shot, basic circuit (ICAN6267) 203 410
Modulated (ICAN-5030J 202 140
One-shot, compensated circuit (Ir.AN-6267) 203 411
Oscillator, microstripline (AN-3764) 205 442
Multivibrators, integrated-circuit:
Astable (ICAN-4072, 56411 202 93.59 On-off switching circuits IAN-4537) 206 447
Bistable (ICAN-5641l 202 61 Operational amplifier
Monostable IICAN5641l 202 61 (technical data, File No. 566) 204 744
lOOK Nos. BOOK Nos_

P
Operational amplifiers, high-performance, PDA 207 187
integrated-circuit (ICAN-5641) 202 55 Peak-envelope-power rating (AN-45911 205 462
Circuit description (ICAN-5641) 202 55 Phase comparator, COS/MOS IICAN-6166) 203 368
Noise figure IICAN-5641) 202 56
Phase-locked loop. fundamentals of OCAN-61011 203 360
Phase compensation (ICAN-5641) 202 57
Slewing rate IICAN56411 202 57 Phase-locked loops, practical digital types
Applications IICAN56411 202 58 (ICAN6101) 203 361
Technical data (File No. 360) 201 61 Phase-shift transformer, discriminator (ICAN-52691 202 308
Operational amplifiers, high-reliability Photo-coupled isolators (AN6054) 206 459
integrated-circuit types (technical data. Photocurrents 207 20
File No. 715) 207 222
Photo detector and power amplifier
Operational amplifiers. integrated-circuit (technical data, File No. 421) 201 367
IICAN5015, 5213, 5290) 202 34,49, 14
Photo-detector and power amplifier,
Applications 202 88-352
integrated-circuit (ICAN-65381 202 269
Bias current, input (ICAN-52901 202 32
Circuit description IICAN-6538) 202 269
Characteristics and features chart 201 10
Typical applications f1CAN-65381 202 272
Common-mode gain (ICAN-52901 202 20
Common-mode rejection 202 38,50,32 Polycrystalline silicon laver 207 68
lICAN5015, 5213, 5290) Power amplifiers, broadband, uhf/microwave
DC levels, input and output (ICAN-529Q) 202 29 IAN-4421) 205 451
Design criteria f1CAN-52901 202 29 Amplitude modulation IAN-4421) 205 453
Equivalent-circuit model (ICAN5290) 202 21 Cascade and parallel connections IAN-4421 I 205 458
External modifications (ICAN-5015) 202 47 Circuit impedances (AN4421l 205 455
Gain-frequency response (ICAN-5015, 5213,5290) 202 37,50,30 Circuit performance (AN-4421l 205 458
General considerations (ICAN-5290l 202 14 Evaluation circuit (AN-4421) 205 451
Input and output impedances Gain and VSWR control (AN-4421) 205 452
Hybrid combiners {AN-4421 I 205 453
lICAN-5015, 5213, 52901 202 38,50,
Input-circuit design (AN-4421) 205 455
16,20
Output-circuit design (AN-4421l 205 453
Inverting configuration (ICAN-5290) 202 15
Package design (AN-4421) 205 451
Load impedance, effect of finite OCAN-5290l 202 21
Practical circuits (AN-44211 205 458
Noninverting configuration (ICAN5290) 202 18
Reduction of VSWR IAN44211 205 451
Offset voltage and current OCAN529Q) 202 32
Operating characteristics (ICAN-5015, 5213) 202 34,49 Power amplifiers, integrated-circuit
Output-power capability IICAN5290) 202 30 multipurpose wideband (ICAN-5766) 202 191
Output-power modifications (ICAN-5015l 202 40 Applications lICAN5766) 202 194
Output swing (ICAN5015) 202 38 Circuit description (ICAN-57661 202 191
Phase compensation (ICAN-5015, 5213, 5290) 202 39,50,29 Operating characteristics (ICAN-5766) 202 194
Phase shifts, feedback IICAN-5290) 202 22 Operation (ICAN-5766) 202 191
Power-supply stability (ICAN-5290) 202 33 201 268
Technical data, (File No. 339)
Quick-selection chart 201 8
Technical data 201 30-116 Power control IAN-42421 206 439
Transfer characteristics (ICAN-5015, 5213) 202 40,50 Power controls, triac, for three-phase
Transfer function OCAN-5290) 202 15,18 systems IAN-6054) 206 456
Operational amplifiers, integrated-circuit, Basic design rules lAN6054) 206 456
application notes on 202 14-86 Circuits lAN-6054) 206 460, 461
Operational amplifiers, integrated-circuit, DC logic circuitry, isolation of (AN-60541 206 458
characteristics and features chart 201 10 Inductive-load systems (AN6054) 206 460
Resistive-load systems 206 458
Operational amplifiers, integrated-circuit
201 61 Trigger circuit (AN-6054) 206 456
high-output-current (technical data, File No. 360)
Operational amplifiers, integrated-circuit Power-frequency curves for rf power
qu ickselection chart 201 8 tranSistors 205 8-10
Operational amplifier, micropower Powerllne noise (ICAN-6176) 203 384
integrated-circuit (technical data, File No. 535) 201 52 Power OSCillators (AN-3764) 205 436
Operational transconductance amplifiers, Lumped-constant 205 442
integrated-circuit, high-performance: Microstripline 205 442
lICAN6668) 202 63 Wideband 205 442
Amplitude modulation (ICAN-6668) 202 68 Power oscillators, microwave:
Applications (iCAN-66681 202 65 Desogn of (AN-3764) 205 441
Circuit description OCAN-6668) 202 63 Power hybrid circuits:
Gain control lICAN-6668) 202 68 Technical data 204 744-756
Multiplexing lICAN-6668) 202 65
Power hybrid operational amplifiers
Technical data (File Nos, 475, 537) 201 30,38
(File Nos. 566, 6811 204 744, 749
Output amplifiers, integrated-circuit (ICAN-6724) 202 345
202 74 Power supplies, compact, highcurrent
Output stages, integrated-circuit (ICAN-6668)
255 5-volt, regulated
Oven control IICAN6182) 202
489 Basic design concept (AN-4509J 204 797
lICAN6182) 206
Design example IAN-4509) 204 803
Overlay transistor structure 207 67 Major elements (AN-4509) 204 797
BOOK Nos. BOOK Nos.
Power supply, bridge-rectifier (AN-46731 204 826 Q

Power supply considerations for CaS/MaS
Quadruple-tuned interstage filter OCAN-53801 202 315
devices:
AC dissipation characteristics OCAN-6576l 203 421 Qualified Parts List (QPLl 207 187
AC performance characteristics (lCAN65761 203 423 Qualified products list 207 10
Filtering requirements (ICAN-65761 203 425 Quiescent dissipation (of CaS/MaS devicesl
High de source IICAN-65761 203 426
IICAN-65761 203 421
Quiescent dissipation (ICAN-6576) 203 421
Regulation requirements OCAN-6576l 203 425
System power, calculation of (l CAN-6576) 203 424
Switching characteristics (ICAN-6576) 203 424
Power supply, regulated 60watt R
20-volt IAN-45581 204 805
Circuit description (AN-4558) 204 805 Radiation dose rate 207 21
Construction (AN-4558) 204 812 Radiation, effect on power transistors 207 19
Design considerations (AN-4558) 204 809 Displacement damage 207 20
Foldback current limiting (AN-4558) 204 807 Photocurrents 207 20
Performance IAN-45581 204 811 Radiation-hardened power transistors,
Voltage regulation (AN-4558) 204 805 technical data 207 45
Power-transistor chips Radiation levels 207 20
(technical data), (File No. 632l 204 738-742 Radiation parameter 207 20
Power transistors and power hybrid circuits 204 1 Radiation resistance of. COS/Mas
Power transistors, high-reliability 207 12 CD4000A IICAN-62241 207 522
Power transistors, selection charts 204 10-22 Radio frequency interference (RFIl IAN-36971 206 389
Power transistors (technical data) : Suppression network (AN-4242l 206 443
Epitaxial-base types 204 170-522 Suppression of IAN-3778, 4242, 4537 206 397, 443,
204 404-689 449
High-speed switching types
High-voltage types 204 278-402 RAM, CaS/MaS, binary, 4-word, a-bit
Hometaxial-base types 204 26-168 (technical datal, (File No. 613l 203 184
Monolithic Darlington types 204 524-556
Rating chart, thermal-cycling (AN-4612, 204 823,831,
Small-signal low-noise types 204 692-735
Special audio power types 204 558-276 4783,61631 846
Power transistors, thermal-cycling ratings Rating curves, rectifier (AN-3659) 206 380
for IAN-4612, 4783, 61631 204 823,831, RCS color system (ICAN-67241 202 352
846 Reactor element, switching-regulator lAN-3616l 204 784
Power transistors, thermal-cycling Read-only-memory, CaS/MaS (technical data),
requirements (AN-4612, 4783l 204 824, 832 IFile No. 6131 203 184
Power transistors, vhfluhf, broadband Readouts, incandescent (ICAN-6733) 203 480
power-amplifier applications of (AN-601o) 205 475 Real-time controls (AN-6163l 207 62
Pix-if system, integrated-circuit (ICAN-6544l 202 333 Receiver circuits, integrated
20-51 Quick selection chart 201 18
Planar transistors, rf power (technical datal 205
Plastic-package transistors and thyristors (AN-4124) 204 789
Receiver subsystem, AM, integrateo-circuit
Lead-forming techniques (AN-4124) 204 791
Mounting IAN-41241 204 793 (technical datal. (File No. 5601 201 446
Thermal-resistance considerations (AN41241 204 793 Receiver synthesizer, caS/Mas FM (ICAN-6716) 203 460
Types of packages IAN-41241 204 789 Recovered audio (ICAN-5269) 202 308
Plastic-package transistors and thyristors lAN-4124) 206 422 Rectifier current, calculation of lAN-36591 206 382
Lead-forming techniques (AN-4124) 206 424
Mounting IAN-41241 Rectifier product matrix 206 22-24
206 426
Thermal-resistance considerations (AN-41241 206 426 Rectifier rating curves (AN-3659) 206 385
Types of packages (AN-4124) 206 422 Rectifiers, fast recovery, (File Nos. 580, 629, 663, 206 345,313,
P-N-P power transistors, selection charts 204 13-22 318,326,
664, 6651
Popcorn noise (ICAN-6732) 202 79 334
Preamplifier, demodulator, integrated Rectifiers, silicon
circuit IICAN-67241 202 349 Product matrix 206 22-24
Premium- and ultra-high-reliability Technical data 206 252-348
rf power transistors technical data 207 119-174 Rectifiers, studmounted types
Prescaler, CaS/MaS IICAN-67161 203 458 (technical data) 206 281-293:
Prescaling IICAN-67161 203 458 318-348
Preset-channel memory, CaS/MaS UCAN-6716) 203 470 Rectifier surge-protection resistance,
Processor, digital (ICAN-6210l 203 394 calculation of (AN-3659l 206 381
Product detector, integrated-circuit Reed-relay thyristor gate control (AN-4537l 206 449
IICAN-5022, 50361 202 131,152 Registers, CaS/MaS MSI, design and
Program-switch ("N"-selectl options (ICAN6498l 203 420 application IICAN-61661 203 368
Proportional zero-voltage switching (AN-6096l 206 465 Reliability classes, MI L-M-3851 0 207 10
Protection circuit CaS/MaS gate-oxide (ICAN-6218) 203 403 Reliability levels, MILS19500 207 10
Pull-up resistor (ICAN-6602) 203 446 Resistance ladder networks (ICAN-60BO) 203 342
Pulse applications, high-current (AN-3418) 206 359 Resistance networks for DAC's (ICAN6oBO) 203 342
Pulse-width circuit, CaS/MOS voltage- Resistance, rectifier surge-protection
controlled IICAN-62671 203 413 calculation of (AN-3659l 206 381
Pushpull inverter (AN-3616) 204 779 Resistor, pull-up OCAN-6602) 203 446
520
Subject Index
BOOK Nos. BOOK Nos.
REVERSAWATT transistors, epitaxial base Schmitt trigger (I CAN-50301 202 143

silicon n-pn and p-n-p (technical datal 204 262-276 SeR's and rectifiers, horizontal-deflection 206 294-302
Reverse-bias second breakdown 207 12 Itechnical datal, IFile Nos. 354, 5221
Reverse collector current 207 15 SeR applications, circuit factor charts 206 375
RF amplifier IAN-45901 202 411 IAN-3551 I
R F amplifiers, integrated circuit (ICAN-5022, 202 108, SCR bridge circuits IAN-42421 206 439
R F amplifiers, MOS-transistor (AN3453, 3535) 202 372,374, SeR circuit, full-wave de (AN-3551) 206 377
378,380 SeR circuit, half-wave (AN-3551) 206 375
RF avalanche breakdown voltage 207 71 SeR control circuit, full-wave {AN-4242l 206 439
RFI (see radio frequency inteferencel SeA control circuit half-wave IAN-4242) 206 439
RF operation IAN-47741 205 472 SeR horizontal deflection system (AN-37801 206 400
RF power amplifiers IAN-3755, 3764, 44211 205 429,444, Advantages of IAN-37801 206 409
Arc protection (AN-3780) 206 408
458, 459
Basic operation (AN-3780) 206 402
R F power devices High voltage generation (AN-3780) 206 406
Application notes for 205 414-511 High-voltage regulation (AN-3780) 206 407
Power-frequency curves 205 8-10 Linearity correction (AN-3780) 206 408
Selection charts 205 11-16 Performance requirements IAN-3780) 206 400
Technical data 205 20-605 Switching-device requirements (AN-3780l 206 401
R F power transistors, power-frequency curves 205 8-10
SCR product matrix 206 18-21
RF power transistors, selection charts for:
Aircraft and marine-radio applications SCR's (technical data) 206 138-250
205 15
Marine-radio applications 205 15 SCR turn-o-n time (AN-3418l "06 359
Microwave applications 205 11 SCR, two-transistor analogy of (AN-42421 206 430
Military applications 205 12 SCR, two-transistor model of (AN-4745) 452
206
Military communications and CATV /MATV
and small-signal applications Screening tests, power-transistor 207 22
205 16
Mobile-radio applications 205 13-15 Second breakdown 207 12
Single-sideband applications 205 16 Second breakdown, forward-bias (AN-4573) 204 817
RF power transistors in linear applications 205 461 Causes of IAN-45731 204 817
IAN-4591l Test facility for (AN-4573) 204 818
Test circuits (AN-4573l 204 818
RF power transistors, pulsed operation of 205 427 Transistor characterization for (AN-4573) 204 818
IAN-37551 Second detector OCAN-5296) 202 99
RF power transistors, safe-area curves for 205 427 Selectivity curve:
IAN-37551 Double-tuned filter II CAN-53801 202 313
RF power transistor, for single-sideband Quadruple-tuned filter (ICAN-5380l 202 314
linear amplifier (AN-4591l 205 461 Six double-tuned filters (I CAN-5380) 202 317
Triple-tuned filter (ICAN-5380) 202 314
Ringing-choke converter (AN-3616l 204 779
Ring modulator, integrated-circuit (ICAN-5299) SEM specification 207 107
202 105
Ripple blanking (lCAN-6294) 202 294 Sensitive-gate silicon controlled
R/S latches, COS/MOS quad 3-state rectifiers (technical data), (File No. 6541 206 138
(technical data), (File No. 590) 203 214 Sensitive-gate triacs (technical data)
IFile Nos. 431, 441, 4701 206 33-46
Serial adder, COS/MOS triple
(technical data), (File No. 503) 203 164
Serial adder, COS/MOS triple
(technical datal. (File No. 575l 203 169
S Servo amplifier OCAN-5338l 202 189

Shift register, COS/MOS dual 4-stage
Safe-area measurements, test set for (AN-6145) 204 838 static (technical data), (File No. 479) , 203 79
Construction (AN-6145) 204 842 Shift register, static, COS/MOS
Controls and connections (AN-6145) 204 842
MSI (technical data), (File No. 575) 203 169
Operation IAN-61451 204 842
Schematic diagram (AN-6145l 204 839 Shift register, COS/MOS, parallel-in,
System design IAN-61451 204 839 parallel-out, 4-stage (technical datal
System philosophy IAN-61451 204 838 IFile No. 5681 203 177
Safe-area systems, pulsed 207 16 Shift register, COS/MOS 4-stage serial-
Safe-operating-area chart 207 16 input/parallel-output, static (ICAN-6166l 203 380
Sample-and-hold circuits (ICAN-6668l 202 66 Shift register, COS/MOS 8-stage,
Sampling plans, LTPD 207 23 asynchronous, parallel-input/serial
Sampling plans, single, for normal inspection 207 25 output static (ICAN-6166l 203 382
Sample size code letters 207 25 Shift register, COS/MOS 8-stage
Saturation current 207 16 static (technical data). (File No. 479) 203 74,110
Scaling adders II CAN-50151 202 35 Shift register, COS/MOS, 18-stage
Schmitt circuit (ICAN-6538) 202 273 static (technical data) (ICAN-6166l 203 380
Schmitt trigger (lCAN-5337) 202 174 Shift register, COS/MOS 18-stage
Schmitt trigger IICAN-5036) 202 152 (technical datal. (File No. 479) 203 37
\~~j~~a~aJI,~r~~I~Os. :>o~,:>UJJ LU~ l:>ts,IOq ts-stage\tecnnlcal Oatal, H-lie NO. :>/~I LUJ Ib~
Silicon bidirectional diacs Static shift register, CaS/MaS, 64-stage

(technical data), (File No. 577) 206 350 (technical data), (File No. 569) 203 158
Silicon-controlled rectifiers and silicon Stereo multiplex decoder, integrated-circuit
rectifiers complement (technical data) (technical datal. (File No. 502) 201 440
IF;le Nos. 522, 3541 206 298-307 Stereo preampl ifier, integrated-circuit
Silicon controlled rectifiers, high- current (technical datal. (File Nos. 377, 387) 201 247,432
pulsed applications of (AN-3418) 206 359 Stripline-package microwave power transistors 205 228-256,
Characteristics and ratings (AN-3418) 206 361 (technical datal. (File Nos. 543-546, 261-274,
Circuits (AN-3418) 206 359 383-396,
626-628,640,641,6571
Design considerations for (AN-3418l 206 359
206 360 401
Switching capability (AN3418)
Turn-on time (AN-3418) 206 359 Stripline power amplifier AN-3764 205 440
Silicon controlled rectifiers, product Stud-mounted rectifiers (technical data) 206 281-293,
matrix 206 18-21 318-580
Silicon controlled rectifiers Surface leakage 207 16
{technical datal 206 138-250 Surge-protection resistance (rectifierl, (AN-3659) 200 301
Silicon rectifiers (technical data) 206 252-348 calculation of (AN-3659) 206 385
Silicon controlled rectifiers, fast turn-off Switching capability (SCR) (AN-3418) 206 360
(technical data), (File Nos. 408, 724) 206 238,245 Swtiching characteristic (of thyristors) (AN-4242) 206 430
Silicon rectifiers, fast-recovery Switching CirCUIts,onoff (AN-4537) 206 447
(technical datal. (File Nos. 663-665. Sw;tch, COS/MOS (lCAN-6080) 203 344
726-729,5801 206 318-348 Switching regulator (AN-3065, 3616) 204 765,779
Silicon rectifiers, capacItive-load Switching-regulator ballasts (AN-3065, 3616) 204 768,783
applications of (AN-3659) 206 380 Switching-regulator circuits components (AN-3616) 204 786
Capacitor-input circuits (AN-3659) 206 380
Limiting resistance (AN3659) 206 381 Switching-regulator reactor element (AN-3616) 204 785
Rating curves (AN-3659) 206 385 Switching-regulator transistor (AN-36161 204 786
Rectifier current (AN-3659) 206 382 Switching SCR's and diodes (AN-3780) 206 401
Silicon transistors for high-voltage Switching transistors (technical data) 204 404-689
application lAN-3065l 204 763 Switching transistor, rf power, planar !technical
Silicon transistors, high-current, n-p-n, data, File Nos. 44, 56) 205 41,48
hometaxial II (technical data) Symmetrical limiting, load impedance for
IFde Nos. 525, 5261 204 141-156 (ICAN-5380) 202 312
Silicon transistors, hIgh-voltage, n-p-n. Synchronous switching, zero-vol tage (AN-6054) 206 458
hometaxialll (technical datal, (File No. 5281 204 133 Synthesizer system, FM (ICAN-67161 203 468
Silicon transistors, medium-power System gain (ICAN-5841) 202 330
IF;le Nos. 527, 5291 204 45,69
Silicon triacs (technical datal 206 28-136
Single-sideband communications systems
IAN-45911 205 461
Single-sideband rf power transistor
(technical datal. (File Nos. 268, 551,484) 205 100,333, T
216
Tapers, -volume-control (lCAN-5841) 202 331
"Slash" sheets 207 186
Temperature-control circuits (AN-6141) 206 474
Slewing rate (ICAN-5641) 202 57
Temperature controllers (ICAN-6182) 202 253
Snubber networks AN-4745 206 451
Electric-heat application lICAN-6182) 202 254
Basic circuit analysis AN-4745 206 453
lntegral-cyde (ICAN-6182) 202 256
Design procedure AN-4745 206 454
On-off (ICAN-61821 202 253
Solid-state ballasting circuits AN-3616 204 778
Temperature controllers (ICAN-61821 206 487
Solid-state relay AN-6141 206 470 Integral-cycle IICAN-6182) 206 490
Use of for power sWItching AN-6141 206 470 On-off type IICAN-61821 206 487
Advantages of AN-6141 206 473 Proportional type UCAN-6182) 206 487
SolId-state traffic flashes f1CAN-6182) 202 260
Solid-state traffic flashes (ICAN-6182) 206 494 Temperature, effect of on silicon transistors 207 15
Sound carrier amplification (ICAN-6544) 202 333 Temperature-sensing diode (File No. 484) 205 216
SpecIal-function sub-system, integrated-circuit Television video if system, integrated-
(technical data), (File Nos. 331,340) 201 466,484 circuit (technical data, File No. 467) 201 525
Speed controls, universal motors (AN-3697) 206 392 Television chroma system integrated-
SPUriOUSnOise sources (I CAN-67321 202 85 circuit (technical data, File Nos. 466, 468) 201 533,549
Spurious nOise, suppression of (ICAN-6732) 202 85 Test circuits and connections and dimensional
Squelch control, COS/MOS IICAN-66021 203 445 outlines for integrated circuits 207 536
Stability, conditions for lICAN-40721 202 90 Test set for safe-area measurements (AN-6145) 204 838
Staircase generator, linear (lCAN-5641) 202 60 Construction (AN-61451 204 842
Subject Index
DATA Page DATA Page

BOOK Nos. BOOK Nos.
Controls and connections (AN-6145) 204 842 Tratfic-signallamp control, triac:

Operation (AN-6145) 204 842 Circuits (AN-4537l 206 446
Schematic diagram (AN-6145) 204 839 Surge current effects IAN-4537) 206 444
System design (AN-6145) 204 839 Triac operation (AN-4537) 206 444
System philosophy (AN-6145) 204 838 Transfer charact~ristic. differential amplifier
Thermal considerations in thyristor mounting ( ICAN5380) 202 312
(AN3822) 206 410 Transformers, transmission-line (AN4591) 205 465
Chassis mounted heat sinks (AN-38221 206 413
Transient-free switch controller (AN-4537) 206 444
Heat sink configurations (AN-3822) 206 412
206 412 Transient voltages (AN-6141) 206 472
Heat-sink mounting (AN-3822)
Power dissipation and heat-sink area (AN-3822) 206 410 Transistor array, integrated-circuit:
207 17 Circuit applications (ICAN-5296) 202 97
Thermal-eycling capability
207 17 Circuit description (ICAN5296) 202 96
Effect of assembly methods on
207 19,56 Operating characteristics (ICAN-5296) 202 97
Effect of package materials on
Thermal-cycling capability, quantitative
measurement of (AN-6163) 207 58 Transistor array, integrated-eircuit high-current,
Application requirements (AN-6163) 207 58 n-pn, display-driver applications of (ICAN-6733) 203 476
Failure analysis (AN-6163) 207 58 Transistor arrays, integrated-circuit, quick
Practical testing (AN-6163) 207 59 201 14
selection chart
Test conditions (AN-6163) 207 60
207 62 Transistor arrays, integrated-circuit (technical
Realtime controls (AN-6163)
Test rack (AN-6163) 207 63 data) 201 118-254
Thermal-cycling rating chart 207 18 Transistor power supplies, compact, 5volt
Thermal<ycling rating system (AN-4509) 204 797
823,831 Basic concept (AN-4509) 204 797
(AN-4612, 4783, 61631 204
Circuit elements (AN4509) 204 797
846 Design example (AN45091 204 802
Rating chart (AN47831 204 831
204 831 Transistors, high-voltage, medium-power
Test program (AN-4783)
207 53 silicon n-p-n (technical data, File No. 508) 204 278
Thermal-cycling rating system (AN-4612)
Analysis of thermal fatigue in power transistors Transistors, highvoltage, high-power, silicon
(AN-4612) 207 53 n-p-n (technical data. File Nos. 492, 509-513) 204 318355
Thermal-cycling rating chart (AN4612) 207 53
Transistor, rf power single-sideband
Thermal fatigue 207 17 (technical data. File Nos. 268, 551) 205 100,333
Thermal-fatigue background (AN-47831 204 831 Transistors, high-power, silicon n-p-n types
Thermal fatigue, power-transistor, analysis of (technical data, File Nos. 524, 5251 204 102,141
(AN-4612) 204 823 Transistors, medium-power, silicon n-p-n types
Thermal-fatigue testing 207 19 (technical data, File Nos. 527,529) 204 45,69
Thermal resistance, hot-spot (AN4774, 6010) 205 472,475 Transistor structure intrinsic (AN-37551 205 429
Three-phase heater control (AN-60541 206 458 Transistors. voltage ratings, interpretation of
Three1Jhase motor control (AN-6054) 206 461 (AN6215) 204 856
Three-phase system. triac power control Transistor-zener diode-diode array (technical
for: data, File No. 533) 201 152
Basic design rules (AN-6054) 206 456
461 Transmission of analog and digital signals
Circuits (AN60541 206
Inductiveload systems (AN-60541 206 460 (ICAN-6101) 203 360
Isolation of dc logic circuitry (AN-6054) 206 459 Transmission-line reflections (ICAN-617S) 203 384
Resistive-load systems (AN-60541 206 459 Transmisison-line transformers (ICAN-4591) 205 465
Trigger circuit (AN-6054) 206 456
Transmitter, output (ICAN-6210) 203 399
Thyristor applications, circuit factors
Triac applications, circuit factors charts (AN-3551) 206 375
charts (AN3551) 206 375
Triac circuit, full-wave:
Thyristor circuits, snubber networks for (AN-4745) 206 451 AC (AN3551) 206 376
Thyristor flasher (AN4745) 206 451 DC (AN3551 1 206 377
Thyristor gate characteristics (AN-4242) 206 432 Triac construction (AN-6141) 206 470
Thyristor power control (AN-4537) 206 449 Triac controls for three-phase, power systems
Thyristors, characteristics and applications (AN6054) 206 456
(AN-4242) 206 430 Triac gate characteristics (AN-3697) 206 386
Thyristors, gated, bidirectional (technical data) 206 28250 Triac product matrix 206 1417
Thyristors. rectifiers, and other diodes 206 1 Triacs for use with IC zerovoltage switch
Thyristors. types of (AN-42421 206 430 (File No. 406) 206 47
Thyristor switching characteristics (AN42421 206 434 Triacs, isolated-tab (technical data, File No. 5401 206 79
Thyristor voltage and temperature ratings (AN-42421 206 431 Triacs, 400-Hz types (technical data, File Nos. 441,
Thyristor voltage regulators, ac (AN-388s) 206 416 443,487) 206 41,99,
Timer, CaS/MOS. battery-operated, 114
digital-display (ICAN-6733) 203 472 Triacs (technical datal 206 28136
Tint-control amplifier, integrated-eircuit Triac voltage-current characteristic (AN-3697) 206 386
(ICAN-6724) 202 349 Triple-tuned interstage filter (ICAN-5380) 202 313
Traffic flasher, solid-state (ICAN-61821 202 260 True/complement buffer, COS&MOS quad
448,494 (technical data, File No. 572) 203 203
(AN4537,ICAN6182) 206
Subject Index
DATA Page DATA- Page

BOOK Nos. BOOK Nos.
Tuned amplifier, integrated circuit (ICAN5030) 202 142 Biasing (ICAN5038) 202 158
206 359 Characteristics (leAN-5038) 207 160
Turn-on time definitions (SCR) (AN3418)
TV circuits (ICAN-6544, 6724) 202 333,345 202 162
Common-mode rejection (ICAN-5038)
TV receiver (ICAN-6544) 202 333 Gain control (ICAN5038) 202 162
Two-transistor analogv (of SeR) (AN-4242) 206 430 Harmonic distortion (IeAN5038) 202 163
Input and output impedance (leAN-503a) 202 161
Swing capability IICAN-5038) 202 163
Video amplifiers, integrated-circuit
(ICAN5296, 5338, 5015) 202 96,186
40
Video and wide-band amplifier, integrated-eircuit
U
(technical data. File Nos. 243, 363, 122) 201 276,282,
UHF amplifier, single-ended (AN-6010l 205 479 294
UHF power generation (AN-37551 205 424 Video detection, linear (ICAN~544) 202 333
Package considerations (AN-3755) 205 424 Video detector, integrated-circuit (ICAN-6544) 202 336
Pulsed operation of rf power trans. (AN-3755) 205 427
Video if amplification (ICAN-6544) 202 333
Reliability considerations (AN-3755) 205 426
RF performance criteria (AN-3755) 205 424 Voltage:
Safe-area curves for rf power trans. (AN3755) 205 427 Base-to-emitter 207 15
Collector-to-emitter saturation 207 15
UHF power tronsistors, broadband applications
205 475 Voltage breakdown, transistor (AN-6215l 204 856
of IAN-6010)
Broadband amplifier chain (AN-6010) 205 483 Voltage and temperature ratings, triac (AN-6141) 206 472
Broadband circuit design approach (AN-6010) 205 477 Voltage-controlled oscillators (ICAN-6267) 203 413
Combined-transistor stage (AN-601 0) 205 483 Voltage-follower amplifier, CaS/MaS IICAN-6080) 203 344
Gain equalizer (AN-6010) 205 481
Voltage follower, integrated-circuit (ICAN-5213) 202 53
Single-ended amplifier (AN-601 0) 205 479
Voltage ratings for transistors, interpretation of
UHF power transistors, characteristics of (AN-6010) 205 475
Hot-spot thermal resistance (AN-601 0) 205 475 (AN-6215) 204 856
Overdrive capability (AN-6010) 205 475 Avalanche multiplication (AN-6215) 204 856
Pulsed operation (AN-6010) 205 475 Common-base avalanche brea kdown (AN-6215l 204 856
Common~mitter avalanche breakdown (AN-6215) 204 857
Ultor voltage (AN3780) 206 400
Effect of circuit conditions (AN-6215) 204 859
Universal motors (AN-3469) 206 364 Total alpha IAN-6215) 204 857
Universal motor speed controls (AN-3469, 3697) 206 364,400 Transistor operating regions (AN-6215) 204 860
Voltage regulation (AN4558) 204 807
Voltage regulators, ac (AN-3886) 206 416
Voltage regulators, integrated-circuit (technical
data, Fire No. 491) 201 375
Voltage regulator, series type (AN-3065) 204 763
V Volume-control circuit, conventional (ICAN-5841) 202 329
Volume-control circuit, feedback t'/pe (ICAN-5814) 202 329
Variablefeedback volume-control circuits,
Volume-control circuit, losser type (lCAN-5841) 202 329
IICAN-5841 ) 202 329
Volume controls, types of (ICAN-5841) 202 329
VCO, phase-locked (ICAN-6267) 203 413
Volume-control tapers (ICAN-5841) 202 331
VERSAWATT transistors, Darlington (technical
data, File Nos. 610, 693, 6941 204 538,545
551
VERSAWATT transistors, epitaxial-base, silicon
(technical data, File Nos. 676, 669, 671, 673, 678) 204 177,193
201,209
226 W
VERSAWATT transistors, high-current, silicon
Wideband multipurpose amplifier, integrated-
n-p-n (technical data, File Nos. 485, 668) 204 121,129
circuit IICAN-5338) 202 177
VERSAWATT transistors, hometaxial-base silicon Applications (ICAN-5338) 202 186
npn Itechnical data, File Nos. 322, 353, 485, 680) 204 61,90 Circuit description (ICAN-53381 202 178
121,83 Gain-frequency response (ICAN-5338) 202 180
Limiting IICAN-53381 202 180,185
VERSAWATT transistors, silicon p-n-p, (technical 204
Noise performance (ICAN5338) 202 185
data, File Nos. 667, 670,672,674,678,694) 189,197, 179
Operating characteristics (ICAN-5338) 202
205,213,
Wideband multipurpose power amplifiers,
226,551 integrated circuit:
VHF mixer, MOS-transistor (AN-3341) 202 362 Applications (ICAN-5766) 202 194
Design considerations (AN-3341) 202 362 Circuit description and operation (ICAN5766) 202 191
Design example (AN-3341 1 202 363 Operating characteristics (ICAN5766) 202 194
Maximum available gain (AN-3341) 202 364 Technical data (File No. 339) 201 268
Maximum usable gain (AN-3341) 202 364 Wideband video and if amplifier, integrated-circuit:
Video amplifier, integrated-circuit (ICAN-5038) 202 158 Bias modes IICAN5977) 202 201
Applications (ICAN5038) 202 163 Characteristics (ICAN-5977) 202 202
DATA Page
BOOK Nos.
Circuit IICAN-5977) 202 Interfacing techniques (ICAN-61821 202 241

Circuit description (ICAN-5977) 202 Off-on sensing amplifier IICAN-6182) 202 244
Construction techniques (ICAN-597?) 202 Operating-power options (ICAN-6182) 202 245
Ratings (ICAN-5977) 202 Proportional control (ICAN--61821 202 247
Stability considerations (ICAN-5977) 202 Sensor isolation (ICAN-6182) 202 252
Technical data (File No. 3631 201 Temperature-controller application (ICAN-6182) 202 253
Thyristor-triggering circuits (ICAN-6182) 202 243
Zerovoltage switches, int~grated circuit

(AN-6054,ICAN-61821 206 456,475
Application considerations (ICAN-6182) 206 479
Characteristics (AN-6054, ICAN-6182) 206 456,475
Circuit operation (tCAN-6182) 206 475
Effect of thyristor load IICAN-61821 206 483
Functional description (ICAN-6182) 206 475
Half-eycling effect (ICAN-6182) 206 480
Hysteresis characteristics (ICAN-6182) 206 480
Inductive loadswitching (ICAN-6182) 206 483
I nterfacing techniques (ICAN-6182) 206 485
Off.cn sensingamplifier (ICAN-61821 206 478
Operatingpower options (ICAN-6182) 206 479
Proportional controlllCAN61821 206 481
Sensor isolation (ICAN-6182) 206 486
Temperature-controller application (ICAN-6182) 206 487
Thyristortriggering circuits (ICAN-6182) 206 477
Zero-voltage switches, integrated-circuit (ICAN~182) 202 Zero-voltage switching (AN4537) 206 446
Application considerations (ICAN~182) 202
Characteristics (technical data, File No. 490) 201 Zero-voltage switching, proportional (AN-6096) 206 465
Circuit operation OCAN-6182) 202 Zero-voltage switches, integrated-eircuit (technical
Effect of thyristor load IICAN-6182) 202 data, File No. 490) 201 338
Functional description (ICAN-6182) 202 Zerovoltage switch, integrated-circuit (AN-60541 206 456
Half-eycling effect (ICAN-61821 202
Hysteresis characteristics (ICAN-61821 202 Zero-voltage synchronous switching (ICAN6182) 202 266
Inductive-load switching IICAN-61 82) 202 IAN-6054,ICAN-61821 206 458,500
1N441B 550-206 252 THC-500 5 AECT 1N5216 550-206 270 THC-500 245 AECT
1N536 550-206 255 THC-500 3 AECT 1N5393 550-206 273 THC-500 478 AECT
lN537 550-206 255 THC-500 3 AECT 1N5394 550-206 273 THC-500 478 AECT
lN538 550-206 255 THC-500 3 AECT 1N5395 550-206 273 THC-500 478 AECT
1N1183A 550-206 291 THC-500 38 AECT 2N681 550-206 225 THC-500 96 5CA
lN1196A 550-206 287 THC-500 6 AECT 2N689 550-206 225 THC-500 96 5CA
1N1198A 550-206 287 THC-500 6 AECT 2N697 550-204 493 PTO-187 16 PWA
1N1200A 550-206 283 THC-500 20 AECT 2N918 550-204 692 AFT-700 83 AF
1N1204A 550-206 283 THC-500 20 AECT 2N1492 550-205 24 AFT-lOO 10 AF
1N1341B 550-206 281 THC-500 58 AECT 2N1711 550-204 503 PTO-187 26 PWA
1N1342B 550-206 281 THC-500 58 AECT 2N1842A 550-206 234 THC-500 28 5CA
lN1348B 550-206 281 THC-500 58 AECT 2N1847A 550-206 234 THC-500 28 5CA
1N1763A 550-206 258 THC-500 89 AECT 2N1848A 550-206 234 THC-500 28 5CA
1N1764A 550-206 258 THC-500 89 AECT 2N1849A 550-206 234 THC-500 28 5CA
lN2858A 550-206 265 THC-500 91 AECT 2N1850A 550-206 234 THC-500 28 5CA
lN2859A 550-206 265 THC-500 91 AECT 2N1893 550-204 507 PTO-187 34 PWA
1N2861A 550-206 265 THC-500 91 AECT 2N2102 550-207 34 PWA
lN2864A 550-206 265 THC-500 91 AECT 2N2631 550-205 28 AFT-700 32 AF
1N3193 550-206 294 THC-500 41 AECT 2N2857 550-204 714 AFT-700 61 AF
1N3194 550-206 294 THC-500 41 AECT 2N2857 550-205 33 AFT-700 61 AF
1N3195 550-206 294 THC-500 41 AECT 2N2876 550-205 28 AFT-700 32 AF
lN3196 550-206 294 THC-500 41 AECT 2N2895 550-204 517 PTO-187 143 PWA
1N3253 550-206 294 THC-500 41 AECT 2N2896 550-204 517 PTO-187 143 PWA
1N3563 550-206 294 THC-500 41 AECT 2N3054 550-207 34 PWA
1N3880 550-206 323 THC-500 726 AECT 2N3118 550-205 37 AFT-700 42 AF
1N3881 550-206 323 THC-500 726 AECT 2N3119 550-205 41 AFT-700 44 AF
1N3882 550-206 323 THC-500 726 AECT 2N3228 550-206 144 THC-500 114 5CA
1N3883 550-206 323 THC-500 726 AECT 2N3229 550-205 45 AFT-700 50 AF
1N3889 550-206 331 THC-500 727 AECT 2N3262 550-205 48 AFT-700 56 AF
1N3891 550-206 331 THC-500 727 AECT 2N3263 550-207 35 PWA
1N3900 550-206 339 THC-500 728 AECT 2N3375 550-205 52 AFT-700 386 AF
lN3910 550-206 342 THC-500 729 AECT 2N3478 550-204 696 AFT-700 77 AF
1N3911 550-206 342 THC-500 729 AECT 2N3478 550-205 60 AFT-700 77 AF
1N3912 550-206 342 THC-500 729 AECT 2N3525 550-206 144 THC-500 114 5CA
1N3913 550-206 342 THC-500 729 AECT 2N3528 550-206 144 THC-500 114 5CA
1N5211 550-206 270 THC-500 245 AECT 2N3529 550-206 144 THC-500 114 5CA
526
Index to Devices
DATA DATA Product
File Product File
Type No. BOOK Page Catalog Type No. BOOK Page Catalog
No. Line No. Line
Vol. No. Vol. No.
2N3553 550-205 52 RFT-700 386 RF 2N5298 550-204 61 PTO-187 322 PWR
2~!3583 550-204 304 PTO-187 138 PWR 2N5320 550-204 429 PTO-187 325 PWR
2N3584 550-204 304 PTO187 138 PWR 2N5320 550-207 38 PWR
2N3585 550-204 304 PTO-187 138 PWR 2N5321 550-204 429 PTO-187 325 PWR
2N3600 550204 692 RFT700 83 RF 2N5322 550-204 429 PTO-187 325 PWR
2N3600 550205 20 RFT-700 83 RF 2N5322 550-207 39 PWR
2N3632 550205 52 RFT700 386 RF 2N5323 550204 429 PTO-187 325 PWR
2N3650 550-206 238 THC-500 408 5CR 2N5415 550-204 292 PTO-187 336 PWR
2N3651 550-206 238 THC-500 408 5CR 2N5416 550204 292 PTO-187 336 PWR
2N3652 550206 238 THC-500 408 5CR 2N5441 550206 55 THC500 593 TRI
2N3653 550-206 238 THC-500 408 5CR 2N5442 550-206 55 THC-500 593 TRI
2N3654 550206 245 THC500 724 5CR 2N5443 550-206 55 THC-500 593 TRI
2N3655 550-206 245 THC-500 724 5CR 2N5444 550-206 55 THC-500 593 TRI
2N3656 550-206 245 THC-500 724 5CR 2N5445 550-206 55 THC-500 593 TRI
2N3657 550-206 245 THC-500 724 5CR 2N5446 550-206 55 THC500 593 TRI
2N3658 550206 245 THC500 724 5CR 2N5470 550-205 140 RFT700 350 RF
2N3668 550-206 203 THC-500 116 5CR 2N5490 550-204 90 PTO-187 353 PWR
2N3669 550206 203 THC500 116 5CR 2N5491 550-204 90 PTO187 353 PWR
2N3670 550-206 203 THC-500 116 5CR 2N5492 550204 90 PTO-187 353 PWR
2N3733 550205 64 RFT700 72 RF 2N5493 550204 90 PTO187 353 PWR
2N3771 550-204 141 PTO-187 525 PWR 2N5494 550-204 90 PTO-187 353 PWR
2N3772 550-204 141 PTO187 525 PWR 2N5495 550204 90 PTO187 353 PWR
2N3773 550-204 149 PTO-187 526 PWR 2N5496 550204 90 PTO-187 353 PWR
2N3773 550-207 36 PWR 2N5497 550-204 90 PTO187 353 PWR
2N3839 550204 718 RFT700 229 RF 2N5567 550206 92 THC-500 457 TRI
2N3839 550-205 69 RFT-700 229 RF 2N5568 550-206 92 THC500 457 TRI

2N3866 550-205 73 RFT-700 80 RF 2N5569 550206 92 THC-500 457 TRI
2N3870 550-206 218 THC-500 578 5CR 2N5570 550206 92 THC-500 457 TRI
2N3871 550-206 218 THC-500 578 5CR 2N5571 550206 85 THC-500 458 TRI
2N3872 550-206 218 THC-500 578 5CR 2N5572 550206 85 THC-500 458 TRI
2N3873 550206 218 THC500 578 5CR 2N5573 550-206 85 THC500 458 TRI
2N3878 550204 443 PTO187 299 PWR 2N5574 550-206 85 THC-500 458 TRI
2N3879 550-204 443 PTO-187 299 PWR 2N5575 550-204 162 PTO187 359 PWR
2N3879 550-207 36 PWR 2N5578 550-204 162 PTO187 359 PWR
2N3896 550-206 218 THC-500 578 5CR 2N5578 550-207 39 PWR
2N3897 550-206 218 THC-500 578 5CR 2N5671 550-204 481 PTO-187 383 PWR
2N3898 550-206 218 THC-500 578 5CR 2N5672 550-204 481 PTO-187 383 PWR
2N3899 550-206 218 THC-500 578 5CR 2N5754 550-206 28 THC500 414 TRI
2N4012 550-205 77 RFT-700 90 RF 2N5755 550-206 28 THC500 414 TRI
2N4036 550-204 410 PTO187 216 PWR 2N5756 550-206 28 THC500 414 TRI
2N4036 550-207 37 PWR 2N5757 550-206 28 THC-500 414 TRI
2N4037 550-204 410 PTO187 216 PWR 2N5781 550-204 34 PTO187 413 PWR
2N4063 550-204 286 PTO187 64 PWR 2N5781 550-207 40 PWR
2N4064 550204 286 PTO187 64 PWR 2N5782 550-204 34 PTO-187 413 PWR
2N4101 550206 144 THC-500 114 5CR 2N5783 550204 34 PTD-187 413 PWR
2N4102 550-206 144 THC-500 114 5CR 2N5784 550-204 34 PTO-187 413 PWR
2N4103 55D-206 203 THC-500 116 5CR 2N5784 550-207 40 PWR
2N4240 550-204 304 PTO-187 135 PWR 2N5785 550204 34 PTO-187 413 PWR
2N4314 550204 410 PTO187 216 PWR 2N5786 550204 34 PTD-187 413 PWR
2N4347 550204 133 PTO187 528 PWR 2N5804 550-204 379 PTO-187 407 PWR
2N4348 550-204 149 PTO-187 526 PWR 2N5805 550-204 379 PTO187 407 PWR
2N4427 550-205 81 RFT-700 228 RF 2N5838 550-204 356 PTO-187 410 PWR
2N4440 550205 87 RFT700 217 RF 2N5839 550-204 356 PTO-187 410 PWR
2N4932 550205 92 RFT70o 249 RF 2N5840 550-204 356 PTO-187 410 PWR
2N4933 550-205 92 RFT700 249 RF 2N5913 550-205 146 RFT700 423 RF
2N5016 550-205 96 RFT-700 255 RF 2N5914 550-205 152 RFT-700 424 RF
2N5038 550-204 461 PTO-187 698 PWR 2N5915 550-205 152 RFT700 424 RF
2N5039 550-204 461 PTO-187 698 PWR 2N5916 550-205 158 RFT700 425 RF
2N5070 550205 100 RFT700 268 RF 2N5917 550-205 158 RFT700 425 RF
2N5071 550-205 105 RFT700 269 RF 2N5918 550-205 164 RFT-700 448 RF
2N5090 550-205 109 RFT-700 270 RF 2N5919A 550-205 169 RFT-700 505 RF
2N5102 550-205 113 RFT700 279 RF 2N5920 550-205 175 RFT-700 440 RF
2N5109 550-204 722 RFT700 281 RF 2N5921 550-205 181 RFT-700 427 RF
2N5109 550-205 118 RFT700 281 RF 2N5954 550-204 170 PTO-187 675 PWR
2N5179 550-204 700 RFT-700 288 RF 2N5954 550-207 41 PWR
2N5179 550205 124 RFT-70o 288 RF 2N5955 550-204 170 PTO187 675 PWR
2N5180 550-205 130 RFT-70o 289 RF 2N5956 550-204 170 PTO-187 675 PWR
2N5189 550-204 418 PTO-187 296 PWR 2N5992 550205 189 RFT-7oo 451 RF
2N5202 550-204 443 PTD-187 299 PWR 2N5993 550-205 194 RFT7oo 452 RF
2N5239 550-204 373 PTO-187 321 PWR 2N5994 550-205 199 RFT7oo 453 RF
2N524o 550-204 373 PTO-187 321 PWR 2N5995 550205 205 RFT-700 454 RF
2N524o 550207 37 PWR 2N5996 550-205 210 RFT-7oo 455 RF
2N5262 550-204 423 PTO-187 313 RF 2N6032 550-204 487 PTO-187 462 PWR
2N5262 550-205 134 PTO-187 313 RF 2N6033 550-204 487 PTO-187 462 PWR
2N5262 550-207 38 RF 2N6033 550-207 41 PWR
2N5293 550-204 61 PTO-187 322 PWR 2N6055 550-204 527 PTO-187 563 PWR
2N5294 550-204 61 PTO-187 322 PWR 2N6056 550-204 527 PTO-187 563 PWR
2N5295 550-204 61 PTO-187 322 PWR 2N6056 550-207 42 PWR
2N5296 550-204 61 PTO-187 322 PWR 2N6077 550204 318 PTO-187 492 PWR
2N5297 550204 61 PTO187 322 PWR 2N6078 55Q204 318 PTO187 492 PWR
527
Index to Devices
DATA Product
DATA File Product
File
No. Line No. Line
Vol. No. Vol. No.
2N6472 550-204 217 PTO187 677 PWR
2N6079 550204 318 PTO-187 492 PWR
2N6473 550204 177 PTO-187 676 PWR
2N6079 550207 42 PWR
2N6474 550204 177 PTO-187 676 PWR
2N6093 550-205 216 RFT-700 484 RF
2N6475 550-204 177 PTO-187 676 PWR
2N6098 550-204 121 PTO-187 485 PWR
2N6476- 550-204 177 PTO187 676 PWR
2N6099 550204 121 PTO187 485 PWR
2N6477 550-204 83 PTO187 680 PWR
2N6100 550204 121 PTO187 485 PWR
2N6478 550204 83 PTO-187 680 PWR
2N6101 550-204 121 PTO187 485 PWR
2N6479 550-204 454 PTO187 702 PWR
2N6102 550-204 121 PTO-187 485 PWR
2N6479 550-207 45 PWR
2N6103 550204 121 PTO-187 485 PWR
2N6480 550-204 454 PTO-187 702 PWR
2N6104 550205 221 RFT700 504 RF
2N6480 550207 45 PWR
2N6105 550205 221 RFT700 504 RF
2N6481 550204 454 PTO-187 702 PWR
2N6106 550204 177 PTO187 676 PWR
2N6481 550207 45 PWR
2N6107 550-204 177 PTO-187 676 PWR
2N6482 550-204 454 PTO-187 702 PWR
2N6108 550-204 177 PTO-187 676 PWR
177 2N6482 550-207 45 PWR
2N6109 550-204 PTO-187 676 PWR
2N6486 550204 226 PTO-187 678 PWR
2N6110 550-204 177 PTO-187 676 PWR
2N6487 550-204 226 PTO187 678 PWR
2N6111 550-204 177 PTO-187 676 PWR
2N6488 550-204 226 PTO-187 678 PWR
2N6175 550204 278 PTO187 508 PWR
2N6489 550204 226 PTO-187 678 PWR
2N6176 550204 278 PTO187 508 PWR
2N6490 550204 226 PTO-187 678 PWR
2N6177 550-204 278 PTO-187 508 PWR
2N6491 550-204 226 PTO-187 678 PWR
2N6178 550-204 435 PTO-187 562 PWR
2N6496 550-204 461 PTO-187 698 PWR
2N6179 550204 435 PTO187 562 PWR
3N128 550201 634 M05-160 309 M05/FET
2N6180 550-204 435 PTO-187 562 PWR
3N138 550-201 639 M05160 283 M05/FET
2N6181 550-204 435 PTO-187 562 PWR
3N139 550201 643 M05-160 284 M05/FET
2N6211 550-204 312 PTO-187 507 PWR
PWR 3N140 550-201 667 M05-160 285 M05/FET
2N6212 550204 312 PTO-187 507
PWR 3N141 550201 667 M05-160 285 M05/FET
2N6213 550204 312 PTO-187 507
2N6214 312 PTO187 507 PWR 3N142 550-201 648 M05160 286 M05/FET
550204
550-204 217 PTO187 677 PWR 3N143 550-201 634 M05-160 309 M05/FET
2N6246
217 PTO187 677 PWR 3N152 550-201 654 M05-160 314 M05/FET
2N6247 550204
2N6248 217 PTO-187 677 PWR 3N153 550-201 659 M05160 320 M05/FET
550204
2N6248 43 PWR 3N154 550-201 662 M05-160 335 M05/FET
550207
2N6249 550204 385 PTO187 523 PWR 3N159 550-201 675 M05-160 326 M05/FET
2N6250 550204 385 PTO-187 523 PWR 3N187 550201 690 M05160 436 M05/FET
2N6251 550-204 385 PTO187 523 PWR 3N200 550-201 698 M05160 437 M05/FET
2N6251 550-207 43 PWR 40080 550205 275 RFT-700 301 RF

2N6253 550-204 102 PTO-187 524 PWR 40081 550205 275 RFT700 301 RF
2N6254 550-204 102 PTO187 524 PWR 40082 550-205 275 RFT700 301 RF
2N6257 550-204 141 PTO-187 525 PWR 40279 550207 119 RFT700 46 RF
2N6258 550-204 141 PTO-187 525 PWR 40280 550-205 279 RFT700 68 RF
2N6259 550204 149 PTO-187 526 PWR 40281 550-205 279 RFT-700 68 RF
2N6260 550204 45 PTO-187 527 PWR 40282 550205 279 RFT700 68 RF
2N6261 550204 45 PTO-187 527 PWR 40290 550-205 283 RFT700 70 RF
2N6262 550-204 133 PTO187 528 PWR 40291 550-205 283 RFT700 70 RF
2N6263 550204 69 PTO-187 529 PWR 40292 550-205 283 RFT-700 70 RF
2N6264 550204 69 PTO-187 529 PWR 40294 550-207 123 RFT-700 202 RF
2N6265 550-205 228 RFT-700 543 RF 40296 550-207 130 RFT700 603 RF
2N6266 550-205 234 RFT-700 544 RF 40305 550-207 137 RFT-700 144 RF
2N6267 550-205 240 RFT-700 545 RF 40306 550-207 137 RFT700 144 RF
2N6268 550-205 246 RFT-700 546 RF 40307 550-207 137 RFT-700 144 RF
2N6269 550-205 246 RFT-700 546 RF 40309 550-204 655 PTO187 78 PWR
2N6288 550-204 177 PTO187 676 PWR 40310 550-204 655 PTO-187 78 PWR
2N6289 550204 177 PTO-187 676 PWR 40311 550-204 655 PTO-187 78 PWR
2N6290 550-204 177 PTO-187 676 PWR 40312 550-204 655 PTO-187 78 PWR
2N6291 550204 177 PTO187 676 PWR 40313 550204 655 PTO187 78 PWR
2N6292 550204 177 PTO-187 676 PWR 40314 550-204 655 PTO-187 78 PWR
2N6293 550-204 177 PTO-187 676 PWR 40315 550-204 655 PTO-187 78 PWR
2N6354 550-204 149 PTO-187 582 PWR 40316 550-204 655 PTO-187 78 PWR
2N6371 550204 97 PTO-187 607 PWR 40317 550204 655 PTO-187 78 PWR
2N6372 550-204 170 PTO-187 675 PWR 40318 550-204 655 PTO-187 78 PWR
2N6373 550204 170 PTO-187 675 PWR 40319 550-204 655 PTO187 78 PWR
2N6374 550204 170 PTO-187 675 PWR 40320 550-204 655 PTO187 78 PWR
2N6383 550204 532 PTO-187 609 PWR 40321 550-204 655 PTO187 78 PWR
2N6384 550-204 532 PTO187 609 PWR 40322 550-204 655 PTO187 78 PWR
2N6385 550-204 532 PTO187 609 PWR 40323 550-204 655 PTO-187 78 PWR
2N6385 550207 44 PWR 40324 550-204 655 PTO-187 78 PWR

2N6386 550204 538 PTO-187 610 PWR 40325 550-204 655 PTO-187 78 PWR
2N6387 550-204 538 PTO-187 610 PWR 40326 550-204 655 PTO-187 78 PWR
2N6388 550-204 538 PTO-187 610 PWR 40327 550-204 655 PTO187 78 PWR
2N6389 550-204 732 RFT-700 617 RF 40328 550-204 655 PTO-187 78 PWR
2N6389 550-205 257 RFT-700 617 RF 40340 550-205 287 RFT-700 74 RF

2N6390 550-205 261 RFT-700 626 RF 40341 550-205 287 RFT700 74 RF
2N6391 550-205 265 RFT-700 627 RF 40346 550-204 393 PTO-187 211 PWR
2N6392 550-205 270 RFT-700 628 RF 40346V1 550-204 393 PTO-187 211 PWR
2N6393 550-205 270 RFT-700 628 RF 40346V2 550-204 393 PTO-187 211 PWR
2N6467 550-204 170 PTO-187 675 PWR 40347 550-204 26 PTO187 88 PWR
2N6468 550204 170 PTO-187 675 PWR 40347V1 550-204 26 PTO187 88 PWR
2N6469 550204 217 PTO187 677 PWR 40347V2 550-204 26 PTO-187 88 PWR
2N6470 550204 217 PTO187 677 PWR 40348 550-204 26 PTO-187 88 PWR
2N6471 550-204 217 PTO-187 677 PWR 40348V1 550204 26 PTO-187 88 PWR
528
Index to Devices
DATA DATA File
File Product Type No. BOOK Page Catalog
Product
Type No. BOOK Page Catalog No. Line
No. Line Vol. No.
Vol. No.
40348V2 SSD-204 26 PTO-187 88 PWR 40819 SSO-201 704 MOS-160 463 MOS/FET
40349 SSO-204 26 PTO-187 88 PWR 40820 SSO-201 724 MOS-160 464 MOS/FET
40349Vl SSO-204 26 PTO-187 88 PWR 40821 SSO-201 724 MOS-160 464 MOS/FET
40349V2 SSO-204 26 PTO-187 88 PWR 40822 SSO-201 732 MOS-160 465 MOS/FET
40361 SSO-204 655 PTO-187 78 PWR 40829 SSO-204 170 PTO-187 675 PWR
40364 SSO-204 655 PTO-187 78 PWR 40836 SSO205 298 RFT-700 497 RF
40366 SSO204 397 PTO-187 215 PWR 40837 SSO-205 298 RFT-700 497 RF
40394 SSO204 410 PTO-187 216 PWR 40885 SSO-204 278 PTO-187 508 PWR
40408 SSO-204 661 PTO-187 219 PWR 40893 SSO-205 304 RFT-700 514 RF
40412Vl SSO-204 393 PTO-187 211 PWR 40896 SSO-204 706 RFT-700 548 RF
40412V2 SSO-204 393 PTO-187 211 PWR 40896 SSO-205 309 RFT-700 548 RF
40414 SSO-207 142 RFT-700 259 RF 40897 SSO-204 706 RFT-700 548 RF
40467A SSO-201 681 MOS-160 324 MOS/FET 40898 SSO-205 313 RFT-700 538 RF
40468A SSO-201 686 MOS-160 323 MOS/FET 40899 SSO-205 313 RFT700 538 RF
40559A SSO-201 686 MOS-160 323 MOS/FET 40915 SSO-205 325 RFT-700 574 RF
40581 SSO-205 275 RF1'700 301 RF 40940 SSO-205 337 RFT-700 553 RF
40582 SSO-205 275 RFT-700 301 RF 40941 SSO-205 342 R FT-700 554 RF
40600 SSO-201 712 MOS-160 333 MOS/FET 40955 SSO-205 346 RFT-700 579 RF
40601 SSO-201 712 MOS-160 333 MOSIFET 40964 SSO205 351 RFT-700 581 RF
40602 SSO-201 712 MOS-160 333 MOSIFET 40965 SSO205 351 RFT-700 581 RF
40603 SSO-201 720 MOS-160 334 MOSIFET 40967 SSO-205 355 RFT-700 596 RF
40604 SSO-201 720 MOS-160 334 MOS/FET 40968 SSO-205 355 RFT-700 596 RF
40611 SSO-204 681 PTO-187 358 PWR 40974 SSO-205 365 RFT700 597 RF
40613 SSO-204 681 PTO-187 358 PWR 40975 SSO-205 369 RFT700 606 RF
40622 SSO-204 681 PTO-187 358 PWR 41008A SSO-205 373 RFT-700 616 RF
40625 SSO-204 681 PTO-187 358 PWR 41009A SSO-205 373 RFT-700 616 RF
'~0632 SSO-204 681 PTO-187 358 PWR 41028 SSO-205 390 RFT-700 640 RF
40636 SSO-204 681 PT '-i37 358 PWR 45191 SSO-204 273 PTO-187 559 PWR
40637A SSO-205 295 RF- i:',}() 655 RF 45192 SSO-204 273 PTO-187 559 PWR
40665 SSO-205 52 RFT/00 386 RF 45193 SSO-204 273 PTO-187 559 PWR
40666 SSO-205 52 RFT-7UO 386 RF 45194 SSO-204 273 PTO-187 559 PWR
40673 SSO-201 745 MOS-160 381 MOS/FET 45195 SSO-204 273 PTO-187 559 PWR
529
B0183 550-204 115 700 PWR CA1558T 550-201 74 COL-820 531 L1C
B0239 550-204 193 669 PWR CA2111AE 550-201 520 COL-820 612 L1C
B0239A 550-204 193 669 PWR CA2111AQ 550-201 520 COL-820 612 L1C
B0239B 550-204 193 669 PWR CA3000 550-201 288 COL-820 121 L1C
B0239C 550-204 193 669 PWR CA3000/1-4 550-207 196 705 L1C
B0240 550-204 197 670 PWR CA3000H 550-201 590 COL-820 516 L1C
B0240A 550-204 197 670 PWR CA3001 550-201 294 COL-820 122 L1C
B0240B 550-204 197 670 PWR CA3001/1-4 550-207 203 714 L1C
B0240C 550-204 197 670 PWR CA3001 H 550-201 590 COL-820 516 L1C
B0241 550-204 201 671 PWR CA3002 550-201 256 COL-820 123 L1C
B0241A 550-204 201 671 PWR CA3002/1-4 550-207 210 713 L1C
B0241B 550-204 201 671 PWR CA3002H 550-201 590 COL-820 516 L1C
B0241C 550-204 201 671 PWR CA3004 550-201 300 COL-820 124 L1C
B0242 550-204 205 672 PWR CA3004/1-4 550-207 216 712 L1C
B0242A 550-204 205 672 PWR CA3005 550-201 306 COL-820 125 L1C
B0242B 550-204 205 672 PWR CA3005H 550-201 590 COL-820 516 L1C
B0242C 550-204 205 672 PWR CA3006 550-201 306 COL-820 125 L1C
B0243 550-204 209 673 PWR CA3007 550-201 313 COL-820 126 L1C
B0243A 550-204 209 673 PWR CA3008 550-201 80 COL-820 316 L1C
B0243B 550-204 209 673 PWR CA3008A 550-201 89 COL-820 310 L1C
B0243C 550-204 209 673 PWR CA3010 550-201 80 COL-820 316 L1C
B0244 550-204 213 674 PWR CA3010A 550-201 89 COL-820 310 L1C
B0244A 550-204 213 674 PWR CA3011 550-201 262 COL-820 128 L1C
B0244B 550-204 213 674 PWR CA3012 550-201 262 COL-820 128 L1C
B0244C 550-204 213 674 PWR CA3012H 550-201 590 COL-820 516 L1C
B0277 550-204 189 667 PWR CA3013 550-201 471 COL-820 129 L1C
B0278 550-204 129 668 PWR CA3014 550-201 471 COL-820 129 L1C
BOX33 550-204 545 693 PWR CA3015 550-201 80 COL-820 316 L1C
BOX33A 550-204 545 693 PWR CA3015A 550-201 89 COL-820 310 L1C
BOX33B 550-204 545 693 PWR CA3015A11-4 550-207 222 715 L1C
BOX33C 550-204 545 693 PWR CA3015H 550-201 590 COL-820 516 L1C
BOX34 550-204 551 694 PWR CA3015L 550-201 605 COL-820 515 L1C
BOX34A 550-204 551 694 PWR CA3016 550-201 80 COL-820 316 L1C
BOX34B 550-204 551 694 PWR CA3016A 550-201 89 COL-820 310 L1C
BOX34C 550-204 551 694 PWR CA3018 550-201 160 COL-820 338 L1C
BFT19 550-204 298 683 PWR CA30~oA 550-201 160 COL-820 338 L1C
BFT19A 550-204 298 683 PWR CA3ll18H 550-201 590 COL-820 516 L1C
BFT19B 550-204 298 683 PWR CA3018L 550-201 605 COL-820 515 L1C
BU106 550-204 363 716 PWR CA3019 550-201 118 COL-820 236 L1C
CA108A5 550-201 105 COL-820 621 L1C CA3019/1-4 550-207 229 722 L1C
CA108AT 550-201 105 COL-820 621 L1C CA3019H 550-201 590 COL-820 516 L1C
CA1085 550-201 105 COL-820 621 L1C CA3020 550-201 268 COL-820 339 L1C
CA108T 550-201 105 COL-820 621 L1C CA3020A 550-201 268 COL-820 339 L1C
CA208A5 550-201 105 COL-820 621 L1C CA3020H 550-201 590 COL-820 516 L1C
CA208AT 550-201 105 COL-820 621 L1C CA3021 550-201 276 COL-820 243 L1C
CA2085 550-201 105 COL-820 621 L1C CA3022 550-201 276 COL-820 243 L1C
CA208T 550-201 105 COL-820 621 L1C CA3023 550-201 276 COL-820 243 L1C
CA308A5 550-201 105 COL-820 621 L1C CA3023H 550-201 590 COL-820 516 L1C
CA308AT 550-201 105 COL-820 621 L1C CA3026 550-201 226 COL-820 388 L1C
CA308H 550-201 590 COL-820 516 L1C CA3026/1-4 550-207 235 706 L1C
CA3085 550-201 105 COL-820 621 L1C CA3026H 550-201 590 COL-820 516 L1C
CA741/1-4 550-207 188 718 L1C CA3028AF 550-201 318 COL-820 382 L1C
CA741CH 550-201 590 COL-820 516 L1C CA3028AH 550-201 590 COL-820 516 L1C
CA741C5 550-201 74 COL-820 531 L1C CA3028AL 550-201 605 COL-820 515 L1C
CA741CT 550-201 74 COL-820 531 L1C CA3028A5 550-201 318 COL-820 382 L1C
CA741 L 550-201 605 COL-820 515 L1C CA3028B 550-201 318 COL-820 382 L1C
CA7415 550-201 74 COL-820 531 L1C CA3028B/1-4 550-207 243 711 L1C
CA741T 550-201 74 COL-820 531 L1C CA3028BF 550-201 318 COL-820 382 L1C
CA747/1-4 550-207 188 718 L1C CA3028B5 550-201 318 COL-820 382 L1C
CA747CE 550-201 74 COL-820 531 L1C CA3029 550-201 80 COL-820 316 L1C
CA 747CF 550-201 74 COL-820 531 L1C CA3029A 550-201 89 COL-820 310 L1C
CA 747CH 550-201 590 COL-820 516 L1C CA3030 550-201 80 COL-820 316 L1C
CA747CT 550-201 74 COL-820 531 L1C CA3030A 550-201 89 COL-820 310 L1C
CA747E 550-201 74 COL-820 531 L1C CA3033 550-201 61 COL-820 360 L1C
CA747F 550-201 74 COL-820 531 L1C CA3033A 550-201 61 COL-820 360 L1C
CA747T 550-201 74 COL-820 531 L1C CA3033H 550-201 590 COL-820 516 L1C
CA748/1-4 550-207 188 718 L1C CA3035 550-201 243 COL-820 274 L1C
CA748CH 550-201 590 COL-820 516 L1C CA3035H 550-201 590 COL-820 516 L1C
CA748C5 550-201 74 COL-820 531 L1C CA3035Vl 550-201 243 COL-820 274 L1C
CA748CT 550-201 74 COL-820 531 L1C CA3036 550-201 158 COL-820 275 L1C
CA7485 550-201 74 COL-820 531 L1C CA3037 550-201 80 COL-820 316 L1C
CA1398E 550-201 573 COL-820 686 L1C CA3038 550-201 80 COL-820 316 L1C
CA14585 550-201 74 COL-820 531 L1C CA3038A 550-201 89 COL-820 310 L1C
CA1458T 550-201 74 COL-820 531 L1C CA3039 550-201 122 COL-820 343 L1C
CA15410 550-201 395 COL-820 536 L1C CA3039/1-4 550-207 250 704 L1C
530
I ndex to Devices
DATA Product
DATA File Product
File
No. Line No. line
Vol. No. Vol. No.
CA3039H 550-201 590 COL-820 516 L1C CA3084L 550-201 605 COL-820 515 L1C
CA3039L 550-201 605 COL-820 515 L1C CA3085 550201 375 COL-820 491 L1C
CA3040 550-201 282 COL-820 363 L1C CA3085/1-4 550-207 285 708 L1C
CA3041 550201 498 COL-820 318 L1C CA3085A 550-201 375 COL-820 491 L1C
CA3042 550-201 506 COL-820 319 L1C CA3085A/14 550-207 285 708 L1C
CA3043 550201 466 COL-820 331 L1C CA3085AF 550-201 375 COL-820 491 L1C
CA3043H 550-201 590 COL-820 516 L1C CA3085A5 550201 375 COL820 491 L1C
CA3044 550-201 484 COL-820 340 L1C CA3085B 550-201 375 COL820 491 L1C
CA3044V1 550-201 484 COL-820 340 L1C CA3085B/1-4 550-207 285 708 L1C
550201 177 COL-820 341 L1C CA3085BF 550-201 375 COL-820 491 L1C
CA3045
710 L1C CA3085B5 550-201 375 COL820 491 L1C
CA3045/1-4 550-207 255
CA3045F 550-201 177 COL820 341 L1C CA3085F 550-201 375 COL-820 491 L1C
COL-820 516 L1C CA3085H 550-201 590 COL820 516 L1C
CA3045H 550201 590
550-201 605 COL-820 515 L1C CA3085L 550-201 605 COL-820 515 LIC
CA3045L
CA30855 550-201 375 COL820 491 L1C
CA3046 550-201 177 COL820 341 L1C
COL-820 CA3086 550201 183 COL820 483 L1C
CA3047 550-201 61 360 L1C
COL-820 CA3086F 550-201 183 COL-820 483 L1C
CA3047A 550-201 61 360 L1C
CA3088E 550-201 446 COL-820 560 L1C
CA3048 550-201 247 COL-820 377 L1C
CA3089E 550201 455 COL820 561 L1C
CA3048H 550-201 590 COL820 516 L1C
707 L1C CA3090AQ 550-201 440 COL-820 684 L1C
CA3049/1-4 550-207 263
550-201 COL-820 516 L1C CA30910 550-201 383 COL-820 534 L1C
CA3049H 590
CA3091 H 550-201 590 COL-820 516 L1C
CA3049L 550-201 605 COL-820 515 L1C
550-201 234 COL-820 611 L1C CA3093E 550-201 152 COL-820 533 L1C
CA3049T
CA3051 550-201 329 COL-820 361 L1C CA3094/1-4 550-207 291 692 L1C
550-201 432 COL-820 387 L1C CA3094A/1-4 550-207 291 692 L1C
CA3052
550-201 318 COL-820 382 L1C CA3094AT 550-201 346 COL-820 598 L1C
CA3053
CA3053F 550-201 318 COL-820 382 L1C CA3094B/1-4 550-207 291 692 L1C
CA30535 550-201 318 COL-820 382 L1C CA3094BT 550-201 346 COL-820 598 L1C
CA3054H 550-201 590 COL-820 516 L1C CA3094T 550-201 346 COL820 598 L1C
CA3054L 550-201 605 COL-820 515 L1C CA3095E 550-201 189 COL-820 591 L1C
CA3058 550-201 338 COL-820 490 L1C CA3096AE 550-201 141 COL820 595 L1C
CA3058/1-4 550-207 269 703 L1C CA3096E 550-201 141 COL820 595 L1C
CA3059 550-201 338 COL-820 490 L1C CA3096H 550-201 590 COL820 516 L1C
CA3059H 550-201 590 COL-820 516 L1C CA3097E 550201 199 COL-820 633 L1C
CA3060AO 550201 38 COL-820 537 L1C CA3097H 550-201 590 COL-820 516 L1C
CA3060BO 550-201 38 COL-820 537 L1C CA3099E 550-201 359 COL820 620 L1C
CA3060E 550-201 38 COL-820 537 L1C CA3100H 550-201 590 COL-820 516 L1C
CA3060H 550-201 590 COL-820 516 L1C CA31005 550-201 98 COL-820 625 L1C
CA3062 550-201 367 COL-820 421 L1C CA3100T 550-201 98 COL-820 625 L1C
CA3064 550-201 490 COL-820 396 L1C CA3102E 550-201 234 COL-820 611 L1C
CA3064E 550-201 490 COL-820 396 L1C CA3102H 550201 590 COL-820 516 L1C
CA3065 550-201 514 COL-820 412 L1C CA3118AT 550-201 166 COL.8jO 532 L1C
CA3067 550-201 533 COL-820 466 L1C CA3118T 550-201 166 COL-820 532 L1C
CA3068 550-201 525 COL-820 467 L1C CA3120E 550-201 5S1 COL-820 691 L1C
CA3070 550-201 549 COL-820 468 L1C CA3121 E 550-201 567 COL-820 688 L1C
CA30n 550-201 549 COL-820 468 L1C CA3125E 550-201 577 COL-820 685 L1C
CA3075 550-201 462 COL-820 429 L1C CA3126Q 550-201 565 COL-820 Pre!. L1C
CA3075H 550-201 590 COL-820 516 L1C CA3140E 550-201 113 COL-820 630 L1C
CA3076 550-201 479 COL820 430 L1C CA3140H 550-201 590 COL-820 516 L1C
CA3076H 550-201 590 COL-820 516 L1C CA3146AE 550-201 166 COL820 532 L1C
CA3078A5 550-201 52 COL-820 535 L1C CA3146E 550201 166 COL-820 532 L1C
CA3078AT 550-201 52 COL-820 535 L1C CA3146H 550-201 590 COL-820 516 L1C
CA3078H 550-201 590 COL-820 516 L1C CA3183AE 550-201 166 COL820 532 L1C
CA3078T 550-201 52 COL-820 535 L1C CA3183H 550-201 590 COL-820 516 L1C
CA3079 550-201 338 COL-820 490 L1C CA3401 550-201 113 COL-820 630 L1C
CA3080/1-4 550-207 277 709 L1C CA6078A5 550-201 69 COL-820 592 L1C
CA3080A 550-201 30 COL-820 475 L1C CA6078AT 550201 69 COL-820 592 L1C
CA3080A/14 550-207 277 709 L1C CA67415 550-201 69 COL-820 592 L1C
CA3080A5 550-201 30 COL-820 475 L1C CA6741T 550-201 69 COL-820 592 L1C
CA3080H 550-201 590 COL-820 516 L1C C02150 550-201 409 COL-820 308 L1C
CA30805 550-201 30 COL-820 475 L1C C02151 550-201 409 COL-820 308 L1C
CA3081 550201 126 COL-820 480 L1C C02152 550-201 409 COL-820 308 L1C
CA3081 F 550-201 126 COL-820 480 L1C C02153 550-201 409 COL-820 308 L1C
CA3081 H 550-201 590 COL-820 516 L1C C02154 550201 421 COL-820 402 L1C
CA3082 550-201 126 COL-820 480 L1C C02500E 550-201 403 COL-820 392 L1C
CA3082F 550-201 126 COL-820 480 L1C C02501 E 550-201 403 COL-820 392 L1C
CA3082H 550-201 590 COL-820 516 L1C C02502E 550-201 403 COL-820 392 L1C
CA3083 550-201 130 COL-820 481 L1C C02503E 550-201 403 COL-820 392 L1C
CA3083F 550-201 130 COL820 481 L1C C04000A/1-4 550-207 309 687 C05/M05
CA3083H 550-201 590 COL-820 516 L1C C04000AO 550-203 30 C05-278 479 C05/MOS
CA3083L 550-201 605 COL-820 515 L1C C04000AE 550-203 30 C05-278 479 Ca5/Ma5
CA3084 550-201 134 COL-820 482 L1C C04000AF 550-203 30 C05278 479 Ca5/Ma5
CA3084H 550-201 590 COL-820 516 L1C C04000AH 550-203 307 Ca5-278 517 ca5/Ma5
531
Index to Devices
DATA DATA Product
File Product File
No. Line No. Line
Vol.No. Vol. No.
CD4000AK SSD-203 30 COS-278 479 COS/MOS CD4017AE SSD203 90 COS278 479 COS/MOS
CD4001 A/1-4 SSD207 309 687 COS/MOS CD4017AF SSD-203 90 COS-278 479 COS/MOS
CD4001AD SSD-203 30 COS-278 479 COS/MOS CD4017AH SSD-203 307 COS-278 517 COS/MOS
CD4001AE SSD-203 30 COS-278 479 COS/MOS CD4017AK SSD-203 90 COS-278 479 COS/MOS
CD4001AF SSD-203 30 COS-278 479 COS/MOS CD4018A11-4 SSD-207 375 742 COS/MOS
CD4001AH SSD-203 307 COS-278 517 COS/MOS CD4018AD SSD-203 95 COS-278 479 COS/MOS
CD4001AK SSD-203 30 COS-278 479 COS/MOS CD4018AE SSD-203 95 COS-278 479 COS/MOS
CD4002A/1-4 SSD-207 309 687 COS/MOS CD4018AF SSD-203 95 COS-278 479 COS/MOS
CD4002AF SSD-203 30 COS-278 479 COS/MOS CD4019A/1-4 SSD-207 380 743 COS/MOS
CD4004A Series Replaced by CD4024A Series CD4019AF SSD-203 100 COS-278 479 COS/MOS
CD4006A/1-4 SSD-207 316 689 COS/MOS CD4019AH SSD-203 307 COS-278 517 COS/MOS
CD4006AD SSD-203 37 COS-278 479 COS/MOS CD4019AK SSD-203 100 COS-278 479 COS/MOS
CD4006AE SSD-203 37 COS-278 479 COS/MOS CD4020A/1-4 SSD-207 384 750 COS/MOS
CD4006AF SSD-203 37 COS-278 479 COS/MOS CD4020AD SSD-203 105 COS-278 479 COS/MOS
COS-278 517 COS/MOS CD4020AE SSD-203 105 COS-278 479 COS/MOS
CD4006AH SSD-203 307
COS-278 479 CD4020AF SSD-203 105 COS-278 479 COS/MOS
CD4006AK SSD-203 37 COS/MOS
CD4007AH SSD-203 307 COS-278 517 COS/MOS CD4021AE SSD-203 110 COS-278 479 COS/MOS
CD4007AK SSD-203 43 COS-278 479 COS/MOS CD4021AF SSD-203 110 COS-278 479 COS/MOS
CD4008AK SSD-203 49 COS-278 479 COS/MOS CD4022AF SSD-203 115 COS-278 479 COS/MOS
CD4010AH SSD-203 307 COS-278 517 COS/MOS CD4024A/1-4 SSD-207 399 732 COS/MOS
CD4010AK SSD-203 54 COS-278 479 COS/MOS CD4024AD SSD-203 120 COS-278 503 COS/MOS
CD4011A/1-4 SSD-207 339 717 COS/MOS CD4024AE SSD-203 120 COS-278 503 COS/MOS
CD4011AD SSD-203 61 COS-278 479 COS/MOS CD4024AF SSD-203 120 COS-278 503 COS/MOS
CD4011AE SSD-203 61 COS-278 479 COS/MOS CD4024AH SSD-203 307 COS-278 517 COS/MOS
CD4014A11-4 SSD-207 352 720 COS/MOS CD4027AH SSD-203 307 COS-278 517 COS/MOS
CD4014AK SSD-203 74 COS-278 479 COS/MOS CD4028AF SSD-203 141 r.OS-278 503 COS/MOS
CD4015A/1-4 SSD-207 357 721 COS/MOS CD4028AH SSD-203 307 <:OS-278 517 COS/MOS
CD4015AK SSD-203 79 COS-278 479 COS/MOS CD4029AH SSD-203 307 COS-278 517 COS/MOS
CD4016A/1-4 SSD-207 362 744 COS/MOS CD4029AK SSD-203 146 COS-.'78 503 COS/MOS
CD4016AD SSD-203 84 COS-278 479 COS/MOS CD4030A/1-4 SSD-207 427 737 COS/MOS
CD4016AE SSD-203 84 COS-278 479 COS/MOS CD4030AD SSD-203 153 COS-278 503 COS/MOS
CD4016AF SSD-203 84 COS-278 479 COS/MOS CD4030AE SSD-203 153 COS-278 503 COS/MOS
CD4016AH SSD-203 307 COS-278 517 COS/MOS CD4030AF SSD-203 153 COS-278 503 COS/MOS
CD4016AK SSD-203 84 COS-278 479 COS/MOS CD4030AH SSD-203 307 COS-278 517 COS/MOS
CD4017A/1-4 SSD-207 370 741 COS/'~OS CD4030AK SSD-203 153 COS-278 503 COS/MOS
CD4017AD SSD-203 90 COS-278 479 COS/MOS CD4031 A/1-4 SSD-207 432 738 COS/MOS
532
Index to Devices
DATA DATA
File Product File Product
No. Line No. Line
Vol. No. Vol. No.
C04031AD SSO-203 158 COS-278 569 CaS/MaS C04046AK SSO-203 226 caS-278 637 caS/Mas
C04031AE SSO-203 158 caS-278 569 caS/Mas C04047A/1-4 SSO-207 495 745 COSIMOS
C04031AH SSO-203 307 caS-278 517 caS/Mas C04047AO SSO-203 233 caS-278 623 caS/Mas
C04031AK SSO-203 158 caS-278 569 caS/Mas C04047AE SSO-203 233 caS-278 623 caS/Mas
C04032A/1-4 SSO-207 438 739 caS/Mas C04047AH SSO-203 307 caS-278 517 caS/Mas
C04032AO SSO-203 164 caS-278 503 caS/Mas C04047AK SSO-203 233 caS-278 623 cOS/Mas
C04032AE SSO-203 164 caS-278 503 caS/Mas C04048A/1-4 SSO-207 506 747 cOS/Mas
C04032AH SSO-203 307 COS-278 517 caS/Mas C04048AO SSO-203 244 caS-278 636 caS/Mas
C04033A/1-4 SSO-207 404 733 caslMas C04048AH SSO-203 307 caS-278 517 caslMas
C04033AO SSO-203 126 caS-278 503 caS/Mas C04048AK SSO-203 244 caS-278 636 caS/Mas
C04033AE SSO-203 126 caS-278 503 caS/Mas C04049A/1-4 SSO-207 513 746 caS/Mas
C04033AF SSO-203 126 caS-278 503 caS/Mas C04049AO SSO-203 251 caS-278 599 caS/Mas
C04033AH SSO-203 307 caS-278 517 caS/Mas C04049AE SSO-203 251 caS-278 599 caS/Mas
C04033AK SSO-203 126 caS-278 503 caS/Mas C04049AF SSO-203 251 caS-278 599 caS/Mas
C04034AO SSO-203 169 caS-278 575 caS/Mas C04049AK SSO-203 251 caS-278 599 caS/Mas
C04034AE SSO-203 169 caS-278 575 caS/Mas C04050A/1-4 SSO-207 513 746 caS/Mas
C04034AH SSO-203 307 caS-278 517 caS/Mas C04050AO SSO-203 251 caS-278 599 caS/Mas
C04035A/1-4 SSO-207 449 751 caS/Mas C04050AF SSO-203 251 caS-278 599 caS/Mas
C04035AO SSO-203 177 caS-278 568 caS/Mas C04050AH SSO-203 307 caS278 517 caS/Mas
C04035AE SSO-203 177 caS-278 568 caS/Mas C04050AK SSO-203 251 caS-278 599 caS/Mas
C04035AH SSO-203 307 caS-278 517 caS/Mas C04051AO SSO-203 258 CaS-278 Pre!. CaS/MaS
C04035AK SSO-203 177 caS-278 568 caS/Mas C04051AE SSO-203 258 CaS-278 Pre!. CaS/MaS
C04036A/1-4 SSO-207 455 749 caS/Mas C04051AK SSO-203 258 caS-278 Prel. caS/Mas
C04036AO SSO-203 184 CaS-278 613 caS/Mas C04052AO SSO-203 258 CaS-278 Pre!. CaS/MaS
C04036AE SSO-203 184 caS-278 613 caS/Mas C04052AE SSO-203 258 CaS278 Pre!. CaS/MaS
C04036AH SSO-203 307 caS-278 517 caS/Mas C04052AK SSO-203 258 caS-278 Prel. caS/Mas
C04036AK SSO-203 184 CaS-278 613 caslMas C04053AO SSO-203 258 caS-278 Prel. caS/Mas
C04037AO SSO-203 191 CaS-278 576 caS/Mas C04053AE SSO-203 258 CaS-278 Pre!. CaS/MaS
C04037AE SSO-203 191 caS-278 576 caS/Mas C04053AK SSO-203 258 caS-278 Prel. caS/Mas
C04037AF SSO-203 191 CaS-278 576 caS/Mas C04054AO SSO203 266 caS-278 634 caS/Mas
C04037AH SSO-203 307 caS-278 517 caS/Mas C04054AE SSO-203 266 caS-278 634 caS/Mas
C04037AK SSO-203 191 caS-278 576 caS/Mas C04054AH SSO-203 307 caS-278 517 caS/Mas
C04038A/1-4 SSO-207 438 739 caS/Mas C04054AK SSO-203 266 caS-278 634 caS/Mas
C04038AO SSO-203 164 caS-278 503 caS/Mas C04055AO SSO-203 266 caS-278 634 caS/Mas
C04038AE SSO203 164 caS-278 503 caS/Mas C04055AE SSO203 266 caS-278 634 caS/Mas
C04038AH SSO-203 307 caS-278 517 caS/Mas C04055AK SSO203 266 caS-278 634 caS/Mas
C04038AK SSO-203 164 caS-278 503 caS/Mas C04056AO SSO-203 266 caS-278 634 caS/Mas
C04039A/1-4 SSO-207 455 749 caS/Mas C04056AE SSO-203 266 caS-278 634 caS/Mas
C04039AO SSO-203 184 caS-278 613 caslMas C04056AH SSO-203 307 caS-278 517 caS/Mas
C04039AH SSO-203 307 caS-278 517 caS/Mas C04056AK SSO-203 266 caS-278 634 caS/Mas
C04039AK SSO-203 184 caS-278 613 caS/Mas C04057AO SSO-203 272 caS-278 635 caS/Mas
C04040AO SSO-203 197 caS278 624 caS/Mas C04059A SSO-203 285 CaS-278 Pre!. CaS/MaS
C04040AE SSO-203 197 caS-278 624 caS/Mas C04061A SSO-203 291 caS-278 Prel. caS/Mas
C04040AF SSO-203 197 CaS-278 624 caS/Mas C04062A SSO-203 295 caS-278 PreL caS/Mas
C04040AH SSO-203 307 CaS-278 517 caS/Mas C04066A SSO-203 303 caS-278 Prel. caS/Mas
C04040AK SSO-203 197 CaS-278 624 caS/Mas CH2102 SSO-204 737 SPG-201 632 PWR
C04041 A/1-4 SSO-207 469 753 caS/Mas CH2270 SSO-204 737 SPG-201 632 PWR
C04041AO SSO-203 203 caS-278 572 caS/Mas CH2405 SSO-204 737 SPG-201 632 PWR
C04041AE SSO-203 203 caS-278 572 caS/Mas CH3053 SSO-204 737 SPG-201 632 PWR
C04041AH SSO-203 307 caS-278 517 caS/Mas CH3439 SSO-204 737 SPG-201 632 PWR
C04041AK SSO-203 203 caS-278 572 caS/Mas CH3440 SSO-204 737 SPG-201 632 PWR
C04042A/1-4 SSO-207 473 756 caS/Mas CH4036 SSO-204 737 SPG-201 632 PWR
C04042AE SSO-203 210 caS-278 589 caS/Mas CH5320 SSO-204 737 SPG-201 632 PWR
C04042AF SSO-203 210 caS-278 589 caS/Mas CH5321 SSO-204 737 SPG-201 632 PWR
C04042AH SSO-203 307 caS-278 517 caS/Mas CH5322 SSO-204 737 SPG-201 632 PWR
C04042AK SSO-203 210 caS-278 589 caS/Mas CH5323 SSO-204 737 SPG-201 632 PWR
C04043A/1-4 SSO-207 477 754 caS/Mas CH5262 SSO-204 737 SPG-201 632 PWR
C04043AE SSO-203 214 caS-278 590 caS/Mas 01201A SSO-206 278 THC-500 495 RECT
C04043AH SSO-203 307 caS-278 517 caS/Mas 012018 SSO-206 278 THC-500 495 RECT
C04043AK SSO-203 214 caS-278 590 caslMas 012010 SSO-206 278 THC-500 495 RECT
C04044A/1-4 SSO-207 477 754 caS/Mas 01201F SSO-206 278 THC-500 495 RECT
C04044AO SSO-203 214 caS-278 590 caS/Mas 01201M SSO-206 278 THC-500 495 RECT
C04044AE SSO-203 214 caS-278 590 caS/Mas 01201N SSO-206 278 THC-500 495 RECT
C04044AH SSO-203 307 caS-278 517 caS/Mas 01201P SSO-206 278 THC-500 495 RECT
C04044AK SSO-203 214 caS-278 590 caS/Mas 02101S SSO-206 298 THC-500 522 RECT
C04045A/1-4 SSO-207 482 755 caS/Mas 02103S SSO-206 298 THC-500 522 RECT
C04045AO SSO-203 220 caS-278 614 caS/Mas 02103SF SSO-206 298 THC-500 522 RECT
C04045AE SSO-203 220 caS-278 614 caS/Mas 02201A SSO-206 313 THC-500 629 RECT
C04045AH SSO-203 307 caS-278 517 caS/Mas 022018 SSO-206 313 THC-500 629 RECT
C04045AK SSO-203 220 caS-278 614 caS/Mas 022010 SSO-206 313 THC-500 629 RECT
C04046A /1-4 SSO-207 487 752 caslMas 02201F SSO-206 313 THC-500 629 RECT
C04046AO SSO-203 226 caS-278 637 caS/Mas 02201M SSO-206 313 THC-500 629 RECT
C04046AE SSO-203 226 caS-278 637 caslMas 02201N SSO-206 313 THC-500 629 RECT
C04046AH SSO203 307 caS-278 517 caS/Mas 02406A SSO-206 318 THC-500 663 RECT
533
"",....,
""." ..
uu rvvn
02406F 550206 318 THC500 663 RECT JAN2N5918 550207 82 RF
02406M 550-206 318 THC-500 663 RECT JAN2N6213 550-207 33 PWR
02412A 550-206 326 THC-500 664 RECT JANTX2N 1486 550-207 26 PWR
02412B 550-206 326 THC-500 664 RECT JANTX2N2857 550-207 79 RF
02412C 550-206 326 THC-500 664 RECT JANTX2N3055 550207 28 PWR
024120 550-206 326 THC-500 664 RECT JANTX2N3375 550-207 80 RF
02412F 550-206 326 THC500 664 RECT JANTX2N3439 550207 28 PWR
02412M 550-206 326 THC-500 664 RECT JANTX2N3441 550-207 29 PWR

02520A 550206 334 THC500 665 RECT JANTX2N3553 550207 80 RF
02520B 550206 334 THC500 665 RECT JANTX2N3585 550207 30 PWR
02520C 550-206 334 THC-500 665 RECT JANTX2N4440 550207 80 RF
025200 550-206 334 THC-500 665 RECT JANTX2N5038 550207 31 PWR
02520F 550206 334 THC-500 665 RECT JANTX2N5071 550207 81 RF

02520M 550-206 334 THC-500 665 RECT JANTX2N5109 550-207 82 RF
02540A 550-206 345 THC-500 580 RECT JANTX2N5416 550-207 31 PWR
02540B 550-206 345 THC500 580 RECT JANTX2N5672 550-207 32 PWR
025400 550-206 345 THC-500 580 RECT JANTX2N5840 550-207 32 PWR
02540F 550206 345 THC-500 580 RECT JANTX2N6213 550207 33 PWR
02540M 550206 345 THC-500 580 RECT JANTXV2N3375 550-207 80 RF
02601A 550-206 308 THC-500 723 RECT JANTXV2N3553 550-207 80 RF
02601B 550206 308 THC-500 723 RECT JANTXV2N4440 550207 80 RF
026010 550-206 308 THC-500 723 RECT R47Ml0 550-205 407 RFT700 605 RF
02601 F 550-206 308 THC-500 723 RECT R47M13 550-205 407 RFT700 605 RF
02601M 550-206 308 THC-500 723 RECT R47M15 550-205 407 RFT700 605 RF
02601N 550-206 308 THC-500 723 RECT RCA1AOl 550-204 636 PTO187 651 PWR
02600EF 550-206 303 THC-500 354 RECT RCA1A02 550204 636 PTO-187 651 PWR
026010F 550206 303 THC-500 354 RECT RCA1A03 550-204 636 PTO-187 651 PWR
02601EF 550-206 303 THC-500 354 RECT RCA1A04 550204 636 PTO187 651 PWR
03202Y 550206 350 THC-500 577 OIAC RCA1A05 550-204 636 PTO187 651 PWR
03202U 550206 350 THC.500 577 OIAC RCA1A06 550-204 636 PTO187 651 PWR
HC2000H 550-204 744 566 HYB RCA1A07 550-204 636 PTO187 651 PWR
HC2500 550-204 749 681 HYB RCA1A08 550-204 636 PTO-187 651 PWR
HR2N2857 550-207 83 RF RCA1A09 550-204 636 PTO187 651 PWR
HR2N3866 550207 85 RF RCA1Al0 550-204 636 PTO-187 651 PWR
HR2N5090 550207 87 RF RCA1Al1 550204 636 PTO-187 651 PWR
HR2N5916 550-207 91 RF RCA1A16 550204 636 PTO-187 651 PWR
HR2N5919A 550-207 95 RF RCA1A18 550204 636 PTO-187 651 PWR
HR2N5920 550-207 97 RF RCA1A19 550204 636 PTO-187 651 PWR
HR2N5921 550-207 99 RF RCA1BOl 550-204 600 PTO-187 647 PWR
HR2N6105 550-207 101 RF RCA1B04 550-204 618 PTO-187 649 PWR
HR2N6265 550-207 103 RF RCA1B05 550204 627 PTO-187 650 PWR
HR2N6266 550-207 105 RF RCA1B06 550204 609 PTO187 648 PWR
HR2N6267 550-207 107 RF RCA1C03 550-204 347 PTO-187 652 PWR
HR2N6390 550-207 111 RF RCA1C06 550-204 575 PTO187 644 PWR
HR2003 550207 111 RF RCA1Cl0 550-204 558 PTO-187 642 PWR
HR2005 550-207 113 RF RCA1Cll 550204 558 PTO187 642 PWR
HR2010 550-207 115 RF RCA1C12 550-204 647 PTO187 652 PWR
HR3001 550-207 117 RF RCA1C13 550-204 647 PTO187 652 PWR
HR3003 550-207 117 RF RCA1C14 550-204 566 PTO187 643 PWR
HR3005 550-207 117 RF RCA1E02 550-204 651 PTO187 653 PWR
JAN2N918 550-207 78 RF RCA1E03 550-204 651 PTO-187 653 PWR
JAN2N1482 550-207 26 PWR RCA29 550-204 232 PTO-187 583 PWR
JAN2N1486 550-207 26 PWR RCA29A 550204 232 PTO-187 583 PWR
JAN2N1490 550-207 27 PWR RCA29B 550204 232 PTO187 583 PWR
JAN2N1493 550-207 78 RF RCA29C 550-204 232 PTO-187 583 PWR
JAN2N2016 550-207 27 PWR RCA30 550204 237 PTO-187 584 PWR
JAN2N2857 550-207 79 RF RCA30A 550204 237 PTO-187 584 PWR
JAN2N3055 550-207 28 PWR RCA30B 550-204 237 PTO187 584 PWR
JAN2N3375 550-207 80 RF RCA30C 550-204 237 PTO187 584 PWR
JAN2N3439 550207 28 PWR RCA31 550-204 242 PTO-187 585 PWR
JAN2N3441 550-207 29 PWR RCA31A 550-204 242 PTO-187 585 PWR
JAN2N3442 550-207 29 PWR RCA31B 550-204 242 PTO-187 585 PWR
JAN2N3553 550207 80 RF RCA31C 550-204 242 PTO187 585 PWR
JAN2N3585 550207 30 PWR RCA32 550-204 247 PTO187 586 PWR
JAN2N3772 550-207 30 PWR RCA32A 550-204 247 PTO-187 586 PWR
JAN2N3866 550-207 81 RF RCA32B 550-204 247 PTO187 586 PWR
JAN2N4440 550207 80 RF RCA32C 550-204 247 PTO187 586 PWR
JAN2N5038 550207 31 PWR RCA41 550-204 252 PTO-187 587 PWR
JAN2N5071 550-207 81 RF RCA41A 550204 252 PTO-187 587 PWR
JAN2N5109 550-207 82 RF RCA41B 550204 252 PTO-187 587 PWR
534
Index to Devices
DATA DATA
File Product File Product
No. Une No. Line
Vol.No. Vol. No.
RCA41C 550-204 252 PTO-187 587 PWR 528008 550-206 166 THC-5oo 501 5CR
RCA42 550-204 257 PTO-187 588 PWR 528000 550-206 166 THC-5oo 501 5CR
RCA42A 550-204 257 PTO-187 588 PWR 537008 550-206 172 THC-500 306 5CR
RCA428 550-204 257 PTO-187 588 PWR 537000 550-206 172 THC-500 306 5CR
RCA42C 550-204 257 PTO-187 588 PWR 53700M 550-206 172 THC-500 306 5CR
RCA10l 550-204 262 PTO-187 557 PWR 53701M 550-206 192 THC-500 476 5CR
RCA102 550-204 262 PTO-187 557 PWR 537025F 550-206 194 THC-5oo 522 5CR
RCA103 550-204 262 PTO-;87 557 PWR 537035F 550-206 194 THC-500 522 5CR
RCA104 550-204 262 PTO-187 557 PWR 53704A 550-206 180 THC-500 690 5CR
RCA202 550-204 262 PTO-187 557 PWR 53704J'y1 550-206 180 THC-5oo 690 5CR
RCA203 550-204 262 PTO-187 557 PWR 537045 550-206 180 THC-500 690 5CR
RCA204 550-204 262 PTO-187 557 PWR 53705M 550-206 187 THC-5oo 354 5CR
RCA205 550-204 266 PTO-187 556 PWR 53706M 550-206 187 THC-500 354 5CR
RCA371 550-204 270 PTO-187 558 PWR 537148 550-206 180 THC-500 690 5CR
RCA411 550-204 332 PTO-187 510 PWR 53714M 550-206 180 THC-500 690 5CR
RCA413 550-204 338 PTO-187 511 PWR 537145 550-206 180 THC-500 690 5CR
RCA423 550-204 344 PTO-187 512 PWR 538000 550-206 199 THC-500 639 ITR
RCA431 550-204 350 PTO-187 513 PWR 53800E 550-206 199 THC-5oo 639 ITR
RCA520 550-204 270 PTO-187 558 PWR 53800EF 550-206 199 THC-5oo 639 ITR
RCA521 550-204 270 PTO-187 558 PWR 53800M 550-206 199 THC-5oo 639 ITR
RCA1000 550-204 524 PTO-187 594 PWR 53800MF 550206 199 THC-500 639 ITR
RCA100l 550-204 524 PTO-187 594 PWR 538005 550-206 199 THC-5oo 639 ITR
RCA2003 550-205 261 RFT-700 626 RF 538005F 550-206 199 THC-5oo 639 ITR
RCA2005 550-205 265 RFT-700 627 RF 56200A 550-206 210 THC-500 418 5CR
RCA2010 550-205 270 RFT-700 628 RF 562008 550-206 210 THC-500 418 5CR
RCA3001 550-205 401 RFT-700 657 RF 562000 550-206 210 THC-500 418 5CR
RCA3003 550-205 401 RFT-700 657 RF 56200M 550-206 210 THC-500 418 5CR
RCA3005 550-205 401 RFT-700 657 RF 56210A 550-206 210 THC-500 418 5CR
RCA3054 550-204 53 PTO-187 618 PWR 56210B 550-206 210 THC-500 418 5CR
RCA3055 550-204 53 PTO-187 618 PWR 562100 550-206 210 THC-500 418 5CR
RCA3441 550-204 77 PTO-187 666 PWR 56210M 550-206 210 THC-5oo 418 5CR
52060A 550-206 138 THC-500 654 5CR 562208 550-206 210 THC-5oo 418 5CR
520608 550-206 138 THC-500 654 5CR 562200 550-206 210 THC-500 418 5CR
52060C 550-206 138 THC-500 654 5CR 56220M 550-206 210 THC-500 418 5CR
520600 550-206 138 THC-500 654 5CR 56400N 550-206 218 THC-500 578 5CR
52060E 550-206 138 THC-500 654 5CR 5641 ON 550-206 218 THC-500 578 5CR
52060F 550-206 138 THC-500 654 5CR 56420A 550-206 218 THC-500 578 5CR
52060M 550-206 138 THC-500 654 5CR 564208 550-206 218 THC-500 578 5CR
520600 550-206 138 THC-500 654 5CR 564200 550-206 218 THC-500 578 5CR
52060Y 550-206 138 THC-500 654 5CR 56420M 550-206 218 THC-500 578 5CR
52061A 550-206 138 THC-500 654 5CR 56420N 550-206 218 THC-500 578 5CR
520618 550-206 138 THC-500 654 5CR 56431M 550-206 228 THC-500 247 5CR
52061C 550-206 138 THC-500 654 5CR 57430M 550-206 238 THC-500 408 5CR
520810 550-206 138 THC-500 654 5CR 57432M 550-206 245 THC-5oo 724 5CR
52061E 550-206 138 THC-500 654 5CR T2300A 550-206 33 THC-5oo 470 TRI
52061 F 550-206 138 THC-500 654 5CR T23008 550-206 33 THC-5oo 470 TRI
52061M 550-206 138 THC-5oo 654 5CR T23000 550-206 33 THC-500 470 TRI
520610 550-206 138 THC-500 654 5CR T2301A 550-206 40 THC-500 431 TRI
52061Y 550-206 138 THC-500 654 5CR T23018 550-206 40 THC-500 431 TRI
52062A 550-206 138 THC-500 654 5CR T23010 550-206 40 THC-500 431 TRI
520628 550-206 138 THC-500 654 5CR T2302A 550-206 33 THC-500 470 TRI
52062C 550-206 138 THC-500 654 5CR T23028 550-206 33 THC-500 470 TRI
520620 550-206 138 THC-500 654 5CR T23020 550-206 33 THC-500 470 TRI
52062E 550-206 138 THC-500 654 5CR T2304B 550-206 41 THC-5oo 441 TRI
52062F 550-206 138 THC-500 654 5CR T23040 550-206 41 THC-5oo 441 TRI
52062M 550-206 138 THC-500 654 5CR T23058 550-206 41 THC-5oo 441 TRI
520620 550-206 138 THC-500 654 5CR T23050 550-206 41 THC-5oo 441 TRI
52062Y 550-206 138 THC-500 654 5CR T2306A 550-206 47 THC-500 406 TRI
52400A 550-206 151 THC-5oo 567 5CR T23068 550-206 47 THC-5oo 406 TRI
524008 550-206 151 THC-500 567 5CR T23060 550-206 47 THC-500 406 TRI
524000 550-206 151 THC-500 567 5CR T2310A 550-206 33 THC-500 470 TRI
52400M 550-206 151 THC-500 567 5CR T23108 550-206 33 THC-500 470 TRI
526008 550-206 156 THC-500 496 5CR T23100 550-206 33 THC-500 470 TRI
526000 550-206 156 THC-500 496 5CR T2311A 550-206 40 THC-500 431 TRI
52600M 550-206 156 THC-500 496 5CR T23118 550-206 40 THC-5oo 431 TRI
526108 550-206 156 THC-500 496 5CR T23110 550-206 40 THC-500 431 TRI
526100 550-206 156 THC-5oo 496 5CR T2312A 550-206 33 THC-500 470 TRI
52610M 550-206 156 THC-500 496 5CR T23128 550-206 33 THC-500 470 TRI
526208 550-206 156 THC-500 496 5CR T23120 550-206 33 THC-5oo 470 TRI
526200 550-206 156 THC-500 496 5CR T2313A 550-206 28 THC-500 414 TRI
52620M 550-206 156 THC-5oo 496 5CR T23138 550-206 28 THC-5oo 414 TRI
527108 550-206 164 THC-500 266 5CR T23130 550-206 28 THC-500 414 TRI
527100 550-206 164 THC-500 266 5CR T2313M 550-206 28 THC-5oo 414 TRI
52710M 550-206 164 THC-500 266 5CR T2316A 550-206 47 THC-500 406 TRI
52800A 550-206 166 THC-500 501 5CR T23168 550-206 47 THC-500 406 TRI
Index to Devices
DATA DATA File Product
File Product Page Catalog
Type No. BOOK Page Catalog Type No. BOOK No. Line
No. line Vol. No.
Vol. No.
T23160 550-206 47 THC500 406 TRI T6401M 550206 107 THC-500 459 TRI
T2500B 550-206 49 THC500 615 TRI T6404B 550-206 114 THC-500 487 TRI
T25000 550~06 49 THC-500 615 TRI T64040 550-206 114 THC500 487 TRI
T2700B 550-206 62 THC500 351 TRI T6405B 550206 114 THC500 487 TRI
T27000 550206 62 THC-500 351 TRI T64050 550206 114 THC-500 487 TRI
T2706B 550-206 47 THC500 406 TRI T6406B 550206 47 THC-500 406 TRI
T27060 550-206 47 THC500 406 TRI T64060 550-206 47 THC-500 406 TRI
T2710B 550-206 62 THC500 351 TRI T6406M 550-206 47 THC-500 406 TRI
T27100 550-206 62 THC-500 351 TRI T6407B 550206 47 THC500 406 TRI
T2716B 550206 47 THC-500 406 TRI T64070 550-206 47 THC-500 406 TRI
T27160 550206 47 THC500 406 TRI T6407M 550206 47 THC-500 406 TRI
T2800B 550-206 69 THC500 364 TRI T641 ON 550-206 55 THC500 593 TRI
T28000 550-206 69 THC500 364 TRI T6411B 550206 107 THC500 459 TRI
T2800M 550-206 69 THC500 364 TRI T64110 550206 107 THC-500 459 TRI
T28010F 550-206 75 THC-500 493 TRI T6411M 550-206 107 THC-500 459 TRI
T2806B 550-206 47 THC500 406 TRI T6414B 550206 114 THC500 487 TRI
T28060 550-206 47 THC500 406 TRI T64140 550206 114 THC500 487 TRI
T2850A 550-206 79 THC-500 540 TRI T6415B 550-206 114 THC-500 487 TRI
T2850B 550206 79 THC500 540 TRI T64150 550206 114 THC500 487 TRI
T28500 550206 79 THC500 540 TRI T6416B 550-206 47 THC-500 406 TRI
T4100M 550-206 85 THC-500 458 TRI T64160 550206 47 THC-500 406 TRI
T4101M 550206 92 THC500 457 TRI T6416M 550206 47 THC-500 406 TRI
T4103B 550206 99 THC500 443 TRI T6417B 550-206 47 THC500 406 TRI
T41030 550-206 99 THC-500 443 TRI T64170 550206 47 THC500 406 TRI
T4104B 550-206 99 THC-500 443 TRI T6417M 550206 47 THC-500 406 TRI
T41040 550206 99 THC500 443 TRI T6420B 550206 55 THC500 593 TRI
T4105B 550-206 99 THC-500 443 TRI T64200 550-206 55 THC206 593 TRI
T41050 550-206 99 THC-500 443 TRI T6420M 550206 55 THC500 593 TRI
T4106B 550206 47 THC500 406 TRI T6420N 550206 55 THC500 593 TRI
T41060 550206 47 THC500 406 TRI T6421 B 550-206 107 THC-500 459 TRI
T4107B 550-206 47 THC-500 406 TRI T6421 0 550-206 107 THC-500 459 TRI
T41070 550-206 47 THC-500 406 TRI T6421M 550-206 107 THC500 459 TRI
T4110M 550-206 85 THC-5Oo 458 TRI T8401B 550206 122 THC5Oo 725 TRI
T4111M 550-206 92 THC-5Oo 457 TRI T84010 550206 122 THC-5Oo 725 TRI
T41138 550206 99 THC-50o 443 TRI T8401M 550-206 122 THC-5Oo 725 TRI
T41130 550-206 99 THC-500 443 TRI T8411B 550206 122 THC-500 725 TRI
T4114B 550-206 99 THC-50o 443 TRI T8411D 550-206 122 THC-500 725 TRI
T41140 550-206 99 THC-5Oo 443 TRI T8411M 550-206 122 THC-500 725 TRI
T4115B 550-206 99 THC-500 443 TRI T8421B 550-206 122 THC500 725 TRI
T41150 550-206 99 THC-500 443 TRI T8421 0 550206 122 THC500 725 TRI
T4116B 550-206 47 THC-500 406 TRI T8421M 550206 122 THC-500 725 TRI
T41160 550206 47 THC500 406 TRI T84308 550-206 130 THC500 549 TRI
T4117B 550206 47 THC500 406 TRI T84300 550206 130 THC500 549 TRI
T41170 550-206 47 THC500 406 TRI T8430M 550206 130 THC-500 549 TRI
T4120B 550206 85 THC5Oo 458 TRI T8440B 550-206 130 THC-5Oo 549 TRI
T41200 550-206 85 THC500 458 TRI T84400 550206 130 THC-5Oo 549 TRI
T4120M 550-206 85 THC-5Oo 458 TRI T8440M 550206 130 THC-5Oo 549 TRI
T4121B 550-206 92 THC-5Oo 457 TRI T8450B 550206 130 THC-500 549 TRI
T41210 550-206 92 THC-5Oo 457 TRI T84500 550-206 130 THC5Oo 549 TRI
T4121M 550206 92 THC5Oo 457 TRI T8450M 550206 130 THC5Oo 549 TRI
T4706B 550206 47 THC-5Oo 406 TRI
T47060 550-206 47 THC-5Oo 406 TRI
T6400N 550-206 55 THC-5Oo 593 TRI
T6401B 550-206 107 THC-500 459 TRI
T64010 550-206 107 THC-5Oo 459 TRI

The 1974 RCA Triac SCR and Diacs Data Book

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The 1974 RCA Triac SCR and Diacs Data Book

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Thyristors, Rectifiers

Seven textbooksize volumes covering all current commercial

SSD-201 B Linear Integrated Circuits and MOS Devices

Announcement Newsletter: "What's New in Solid State" Available

"Bingo-type Response-Card Service" included with Newsletter

Update Mailing Service for IC's, power devices, or entire product

Thyristors, Rectifiers,and Diacs

This DATABOOK contains complete data and related appli-

A feature of this DATABOOK is the complete Guide to RCA

Copyright 1973 by RCA Corporation

Information furnished by RCA is believed to be accurate and reliable. However, no

RCA Solid State IBox 3200 ISomerville, N. J., U.S.A. OB876

The RCA Solid State DATABOOKS are supplemented

New solid-state devices and related publications announced

Each newsletter issue contains a "bingo"-type fast-response

Because we are interested in your reaction to this approach

RCA Solid State Division

(b) from Latin America and Far East:

(c) from United Kingdom, Europe, Middle East, and Africa:

o Pleasesend me details on obtaining update mailings for my DATABOOKS

Do Design Engineer D 0 Computer/Data Processing BOOtQital IC's, COS/MOS

Indicates Type 3 = TO-l (00 indicates Y = 30 V IT( RMS) Rating Voltage

Thyristor Numbering Matrix

0: Mod. TO-5 0: IGT = 25 mA

o : press-fit, flexible leads o : IT(RMS) = BO A

S24 : 4_5-A types 0: TO-B

S26 : 7-A types o : low-profile

0: IGT = 40 mA; VGT = 4 V

S40 : 12_5-A types 0: TO-3

S62 . 1O-A and 20-A types 0 : press-fit o . IT(RMS) = 20 A

S64 : 16-A, 25-A, and 35-A types 0: press-fit 0: IT(RMS) = 35 A

lN248C 6 287 Rectifier 20 50 lN3910 729 342 Rectifier 30 100

AN-3418 "Design Considerations for the RCA-S6431M Silicon Controlled

AN-3469 "Application of RCA Silicon Controlled Rectifiers to the

AN-3551 "Circuit Factor Charts for RCA Thyristor Applications

AN-3659 "Application of RCA Silicon Rectifiers to Capacitive Loads" 380

AN-3697 "Triac Power-Control Applications" 386

AN-3778 "Light Dimmers Using Triacs" 394

AN-3780 "A New Horixontal-Deflection System Using RCA-S3705M and

AN-3822 "Thermal Considerations in Mounting of RCA Thyristors" 410

AN-3886 "AC Voltage Regulators Using Thyristors" 416

AN-4124 "Handling and Mounting of RCA Molded-Plastic Transistors

AN-4242 . . . . . . . . . . . . "A Review of Thyristor Characteristics and Appl ications" 430

AN-4537 "Thyristor Control of Incandescent Traffic-Signal Lamps" 444

AN-4745 "Analysis and Design of Snubber Networks for dv/dt

AN-6054 "Triac Power Controls for Three-Phase Systems" 456

AN-6096 "Solid-State Approaches to Cooking-Range Control" .462

AN-6141 "Power Switching Using Solid-State Relay" 470

ICAN-6182 "Features and Applications of RCA

IT(AMS) 2.5A 2.5A 2.5A 2.5A 2.5A 2.5A 2.5A 2.5A

File No. 406 406 406 406 406 406

'TIRMSI 10.0A 15.0A 10.0A 15.0A 30.0A 40.0A 30.0A 40.0A

""~:r 400 T4117D T41160 T6407D T64060 T6417D T64160

VOROM '5 520600 520610 520620

ITSM 200A 200A 350A 200A 350A

'TSM 200A 3SOA 125A 150A 1SOA 180A 2SOA

100 tN440B lN537 lN2859A

IT(AMS) TRACE RETRACE

1.9 - 2.5 100-600 TO-5 & TO-5 w Red. 2N5757 T2313

0.5 200-400 TO-5 T2304 T2305

2 200-600 TO-8 2N4102 Fuel Igniters

5 200-600 TO-66 53700 High-Frequency Power Supplies

6 50-600 00-4 1N1348B

~D:~~~~r~EAMPERES [IT(RMSJ] :2.5

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