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Introduction to Semiconductor
Devices
B. Mazhari
B M h i
Professor, Dept. of EE
p
IIT Kanpur
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EE311 : Broad Syllabus
y
Bipolar
p Junction Transistor ((BJT))
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EE311: Introduction to Semiconductor Devices
EE311 Silicon
.........
Current vs.
vs Voltage Characteristics
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P N
1
Diode : 1N4001
0.01
Current (A)
1E-4
1E-6
1E-8
1E-10
0.0 0.2 0.4 0.6 0.8 1.0
Voltage (V)
VD
I D I S {exp( ) 1}
n VT
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E
- - + +
P - - + + N
- - + +
- - + +
V(x) W
2 s 1 1
W ( ) Vbi
q N A ND
Vbi
x
k T N AND
Vbi lln 2
q i
n
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Transient Analysis
VO(t) IFR
VF t
VIN(t) R
-IIRR
VR RR
IF
RR ln(1 )
IR
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Circuit Model
CJ
IO
= ID
CD
C jo
dVD dI o VD Cj
I D Io C j VD
dt I o I S (e 1)
nVT m (1 )
dt Vj
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Design Tradeoffs
Breakdown voltage BV
I F (max.) BV 43
Constant
C
Cost
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EE311 Sili
Silicon
(PD PV LED )
(PD,PV,LED...) (HBT )
(HBT..) (MESFET HEMT )
(MESFET,HEMT....)
Where do we begin ?
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Silicon Unit cell
ao 5.43 Ao
1 3 4
N
(5.43 108 )3
5 1022 cm 3
11
NS
((5.43 108 )2
6.8 1024 cm 2
Di
Diamond
d structure
t t
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Charges and Current flow
Electrons (n)
(#/cm3)
Holes (p)
Impurity atoms
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Simplified Model of a semiconductor
electrons Scattering
~ 0.1ps l ~ 10 nm ~ kT 26meV
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Electric field = 0
Average velocity = 0
In the presence of field, there is a net motion of electron in a direction opposite to
the field giving rise to a non
non-zero
zero velocity termed as drift velocity
Average velocity
A l it i
in th
the
direction of field is non-zero
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Drift Velocity
vdn
vdn N E
mobility N 103 cm 2 V . s
vd t
Q q n ( vd t )
J drift
q n vd
N
t t
vd N E J Ndrift qn N E J Pdrift qp P E
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Diffusion current density
ddn
J diff
N ( q) ( Dn )
dx
Dn kT
Ei t i ' Relation
Einstein's R l ti 26mV
V att T=300K
T 300K
n q
dpp
J Pdiff q ( DP )
dx
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Current
J JN JP
n p
J N q (n N E DN ) J P q ( p P E DP )
x x
L
E
Example-1
l 1
n(x) = no
p(x) << no
Area = A
VA
J q no N E J q no N
x
L 0
1. Steady state Z J dx ( q no N ) d
0
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B. Mazhari, Ideal contacts t 0 VA
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L
n(x) = no
p(x) << no J q no N
x
Area = A
VA
Z
1. Steady state 0 J cons.
2. Ideal contacts t
L 0
VA VA
J dx ( q no N ) d J q no N I A q no N
0 VA L L
VA L 1
I ;R ;
R A q N nO
q N nO
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