2SB738, 2SB739

Silicon PNP Epitaxial

Application

Low frequency power amplifier

Complementary pair with 2SD787 and 2SD788

Outline

TO-92MOD

1. Emitter
2. Collector
3. Base

3
2
1
2SB738, 2SB739

Absolute Maximum Ratings (Ta = 25C)

Item Symbol 2SB738 2SB739 Unit
Collector to base voltage VCBO 20 20 V
Collector to emitter voltage VCEO 16 20 V
Emitter to base voltage VEBO 6 6 V
Collector current IC 2 2 A
Collector power dissipation PC 0.9 0.9 W
Junction temperature Tj 150 150 C
Storage temperature Tstg 55 to +150 55 to +150 C

Electrical Characteristics (Ta = 25C)

2SB738 2SB739
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base V(BR)CBO 20 20 V I C = 10 A, IE = 0
breakdown voltage
Collector to emitter V(BR)CEO 16 20 V I C = 1 mA, RBE =
breakdown voltage
Emitter to base breakdown V(BR)EBO 6 6 V I E = 10 A, IC = 0
voltage
Collector cutoff current I CBO 2 2 A VCB = 16 V, IE = 0
Emitter cutoff current I EBO 0.2 0.2 A VEB = 6 V, IC = 0
1
DC current transfer ratio hFE* 100 320 100 320 VCE = 2 V, IC = 0.1 A
Collector to emitter VCE(sat) 0.3 0.3 V I C = 1 A, IB = 0.1 A
saturation voltage
Gain bandwidth product fT 150 150 MHz VCE = 2 V, IC = 10 mA
Collector output capacitance Cob 50 50 pF VCB = 10 V, IE = 0,
f = 1 MHz
Note: 1. The 2SB738 and 2SB739 are grouped by h FE as follows.
B C
100 to 200 160 to 320

2
 2SB738, 2SB739
Maximum Collector Dissipation Curve Typical Output Characteristics (1)
1.2 100
.35
Collector Power Dissipation PC (W)

0 .3
0
25
0.

Collector Current IC (mA)

80

0.8 0.2
60
5
0.1

40 0.1
0.4

20 0.05 mA

IB = 0

0 50 100 150 0 2 4 6 8 10
Ambient Temperature Ta (C) Collector to Emitter Voltage VCE (V)

Typical Output Characteristics (2) Typical Transfer Characteristics

2.0 1,000
25 20
15
VCE = 2 V
Collector Current IC (mA)

1.6 300
Collector Current IC (A)

Pulse
10
100
1.2
Ta = 75C
5 mA 30
0.8 25
PC 25
= 0. 10
9W
0.4
3

1
0 0.4 0.8 1.2 1.6 2.0 0 0.2 0.4 0.6 0.8 1.0
Collector to Emitter Voltage VCE (V) Base to Emitter Voltage VBE (V)

3
2SB738, 2SB739
DC Current Transfer Ratio vs. Saturation Voltage vs.
Collector Current Collector Current

Collector to Emitter Saturation Voltage

10,000 3.0

Base to Emitter Saturation Voltage

DC Current Transfer Ratio hFE

VBE (sat)
3,000 Pulse 1.0
VCE = 2V Ta = 75C

VEC (sat) (V)

VBE (sat) (V)

1,000 0.3
25

300 0.1
VCE (sat)
100 25 0.03
Pulse
IC = 10 IB
30 0.01

10 0.003
1 3 10 30 100 300 1,000 3 10 30 100 300 1,000 3,000
Collector Current IC (mA) Collector Current IC (mA)

Collector Output Capacitance

vs. Collector to Base Voltage
1,000
Collector Output Capacitance Cob (pF)

f = 1 MHz
IE = 0
300

100

30

10
0.1 0.3 1.0 3 10
Collector to Base Voltage VCB (V)

4
 Unit: mm

4.8 0.3 3.8 0.3

8.0 0.5
2.3 Max
0.65 0.1
0.75 Max
10.1 Min
0.60 Max
0.7

0.5 0.1 0.5

1.27
2.54

Hitachi Code TO-92 Mod

JEDEC
EIAJ Conforms
Weight (reference value) 0.35 g
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