Bipolar Junction Transistors

Emitter p n p Collector Emitter n p n Collector

Base Base
pnp transistor npn transistor

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

Emitter p n p Collector Emitter n p n Collector

Base Base
pnp transistor npn transistor

* Bipolar: both electrons and holes contribute to conduction

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

Emitter p n p Collector Emitter n p n Collector

Base Base
pnp transistor npn transistor

* Bipolar: both electrons and holes contribute to conduction

* Junction: device includes two p-n junctions (as opposed to a point-contact transistor, the first
transistor)

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

Emitter p n p Collector Emitter n p n Collector

Base Base
pnp transistor npn transistor

* Bipolar: both electrons and holes contribute to conduction

* Junction: device includes two p-n junctions (as opposed to a point-contact transistor, the first
transistor)
* Transistor: transfer resistor
When Bell Labs had an informal contest to name their new invention, one engineer pointed out that it acts like a resistor,
but a resistor where the voltage is transferred across the device to control the resulting current.
(http://amasci.com/amateur/trshort.html)

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

Emitter p n p Collector Emitter n p n Collector

Base Base
pnp transistor npn transistor

* Bipolar: both electrons and holes contribute to conduction

* Junction: device includes two p-n junctions (as opposed to a point-contact transistor, the first
transistor)
* Transistor: transfer resistor
When Bell Labs had an informal contest to name their new invention, one engineer pointed out that it acts like a resistor,
but a resistor where the voltage is transferred across the device to control the resulting current.
(http://amasci.com/amateur/trshort.html)
* invented in 1947 by Shockley, Bardeen, and Brattain at Bell Laboratories.

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

Emitter p n p Collector Emitter n p n Collector

Base Base
pnp transistor npn transistor

* Bipolar: both electrons and holes contribute to conduction

* Junction: device includes two p-n junctions (as opposed to a point-contact transistor, the first
transistor)
* Transistor: transfer resistor
When Bell Labs had an informal contest to name their new invention, one engineer pointed out that it acts like a resistor,
but a resistor where the voltage is transferred across the device to control the resulting current.
(http://amasci.com/amateur/trshort.html)
* invented in 1947 by Shockley, Bardeen, and Brattain at Bell Laboratories.
* BJT is still used extensively, and anyone interested in electronics must have at least a working knowledge
of this device.

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

Emitter p n p Collector Emitter n p n Collector

Base Base
pnp transistor npn transistor

* Bipolar: both electrons and holes contribute to conduction

* Junction: device includes two p-n junctions (as opposed to a point-contact transistor, the first
transistor)
* Transistor: transfer resistor
When Bell Labs had an informal contest to name their new invention, one engineer pointed out that it acts like a resistor,
but a resistor where the voltage is transferred across the device to control the resulting current.
(http://amasci.com/amateur/trshort.html)
* invented in 1947 by Shockley, Bardeen, and Brattain at Bell Laboratories.
* BJT is still used extensively, and anyone interested in electronics must have at least a working knowledge
of this device.
* A BJT is two diodes connected back-to-back.

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

Emitter p n p Collector Emitter n p n Collector

Base Base
pnp transistor npn transistor

* Bipolar: both electrons and holes contribute to conduction

* Junction: device includes two p-n junctions (as opposed to a point-contact transistor, the first
transistor)
* Transistor: transfer resistor
When Bell Labs had an informal contest to name their new invention, one engineer pointed out that it acts like a resistor,
but a resistor where the voltage is transferred across the device to control the resulting current.
(http://amasci.com/amateur/trshort.html)
* invented in 1947 by Shockley, Bardeen, and Brattain at Bell Laboratories.
* BJT is still used extensively, and anyone interested in electronics must have at least a working knowledge
of this device.
* A BJT is two diodes connected back-to-back.
WRONG! Let us see why.

M. B. Patil, IIT Bombay

Bipolar Junction Transistors
Consider a pnp BJT in the following circuit:
R1 E C R2
p n p
1k I1 I2 1k
B
I3 10 V
5V

M. B. Patil, IIT Bombay

Bipolar Junction Transistors
Consider a pnp BJT in the following circuit:
R1 E C R2
p n p
1k I1 I2 1k
B
I3 10 V
5V

If the transistor is replaced with two diodes connected back-to-back, we get

R1 E C R2

1k I1 D1 D2 I2 1k
B

5V
I3 10 V

M. B. Patil, IIT Bombay

Bipolar Junction Transistors
Consider a pnp BJT in the following circuit:
R1 E C R2
p n p
1k I1 I2 1k
B
I3 10 V
5V

If the transistor is replaced with two diodes connected back-to-back, we get

R1 E C R2

1k I1 D1 D2 I2 1k
B

5V
I3 10 V

Assuming Von = 0.7 V for D1, we get

5 V 0.7 V
I1 = = 4.3 mA,
R1
I2 = 0 (since D2 is reverse biased), and I3 I1 = 4.3 mA.
M. B. Patil, IIT Bombay
Bipolar Junction Transistors

Using a more realistic equivalent circuit for the BJT, we obtain,

R1 E C R2 R1 E I1 C R2
p n p
1k I1 I2 1k 1k I1 I2 1k
B B
I3 I3
5V 10 V 5V 10 V

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

Using a more realistic equivalent circuit for the BJT, we obtain,

R1 E C R2 R1 E I1 C R2
p n p
1k I1 I2 1k 1k I1 I2 1k
B B
I3 I3
5V 10 V 5V 10 V

We now get,
5 V 0.7 V
I1 = = 4.3 mA (as before),
R1

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

Using a more realistic equivalent circuit for the BJT, we obtain,

R1 E C R2 R1 E I1 C R2
p n p
1k I1 I2 1k 1k I1 I2 1k
B B
I3 I3
5V 10 V 5V 10 V

We now get,
5 V 0.7 V
I1 = = 4.3 mA (as before),
R1
I2 = I1 4.3 mA (since 1 for a typical BJT), and

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

Using a more realistic equivalent circuit for the BJT, we obtain,

R1 E C R2 R1 E I1 C R2
p n p
1k I1 I2 1k 1k I1 I2 1k
B B
I3 I3
5V 10 V 5V 10 V

We now get,
5 V 0.7 V
I1 = = 4.3 mA (as before),
R1
I2 = I1 4.3 mA (since 1 for a typical BJT), and
I3 = I1 I2 = (1 ) I1 0 A.

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

Using a more realistic equivalent circuit for the BJT, we obtain,

R1 E C R2 R1 E I1 C R2
p n p
1k I1 I2 1k 1k I1 I2 1k
B B
I3 I3
5V 10 V 5V 10 V

We now get,
5 V 0.7 V
I1 = = 4.3 mA (as before),
R1
I2 = I1 4.3 mA (since 1 for a typical BJT), and
I3 = I1 I2 = (1 ) I1 0 A.
The values of I2 and I3 are dramatically different than the ones obtained earlier, viz., I2 0, I3 4.3 mA.

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

Using a more realistic equivalent circuit for the BJT, we obtain,

R1 E C R2 R1 E I1 C R2
p n p
1k I1 I2 1k 1k I1 I2 1k
B B
I3 I3
5V 10 V 5V 10 V

We now get,
5 V 0.7 V
I1 = = 4.3 mA (as before),
R1
I2 = I1 4.3 mA (since 1 for a typical BJT), and
I3 = I1 I2 = (1 ) I1 0 A.
The values of I2 and I3 are dramatically different than the ones obtained earlier, viz., I2 0, I3 4.3 mA.
Conclusion: A BJT is NOT the same as two diodes connected back-to-back
(although it does have two p-n junctions).

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

What is wrong with the two-diode model of a BJT?

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

What is wrong with the two-diode model of a BJT?

* When we replace a BJT with two diodes, we assume that there is no interaction between the two diodes,
which may be expected if they are far apart.

Emitter p n p Collector

Base

Emitter Collector
D1 Base D2

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

What is wrong with the two-diode model of a BJT?

* When we replace a BJT with two diodes, we assume that there is no interaction between the two diodes,
which may be expected if they are far apart.

Emitter p n p Collector

Base

Emitter Collector
D1 Base D2

* However, in a BJT, exactly the opposite is true. For a higher performance, the base region is made as
short as possible, and the two diodes cannot be treated as independent devices.

Emitter p n p Collector

Base

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

What is wrong with the two-diode model of a BJT?

* When we replace a BJT with two diodes, we assume that there is no interaction between the two diodes,
which may be expected if they are far apart.

Emitter p n p Collector

Base

Emitter Collector
D1 Base D2

* However, in a BJT, exactly the opposite is true. For a higher performance, the base region is made as
short as possible, and the two diodes cannot be treated as independent devices.

Emitter p n p Collector

Base

* Later, we will look at the Ebers-Moll model of a BJT, which is a fairly accurate representation of the
transistor action.

M. B. Patil, IIT Bombay

BJT in active mode

E p n p C E C E n p n C E C
IE IC IE IC IE IC IE IC
IB IB IB
IB
B B B B

M. B. Patil, IIT Bombay

BJT in active mode

E p n p C E C E n p n C E C
IE IC IE IC IE IC IE IC
IB IB IB
IB
B B B B

* In the active mode of a BJT, the B-E junction is under forward bias, and the B-C junction is under
reverse bias.
- For a pnp transistor, VEB > 0 V , and VCB < 0 V .
- For an npn transistor, VBE > 0 V , and VBC < 0 V .

M. B. Patil, IIT Bombay

BJT in active mode

E p n p C E C E n p n C E C
IE IC IE IC IE IC IE IC
IB IB IB
IB
B B B B

* In the active mode of a BJT, the B-E junction is under forward bias, and the B-C junction is under
reverse bias.
- For a pnp transistor, VEB > 0 V , and VCB < 0 V .
- For an npn transistor, VBE > 0 V , and VBC < 0 V .
* Since the B-E junction is under forward bias, the voltage (magnitude) is typically 0.6 to 0.75 V .

M. B. Patil, IIT Bombay

BJT in active mode

E p n p C E C E n p n C E C
IE IC IE IC IE IC IE IC
IB IB IB
IB
B B B B

* In the active mode of a BJT, the B-E junction is under forward bias, and the B-C junction is under
reverse bias.
- For a pnp transistor, VEB > 0 V , and VCB < 0 V .
- For an npn transistor, VBE > 0 V , and VBC < 0 V .
* Since the B-E junction is under forward bias, the voltage (magnitude) is typically 0.6 to 0.75 V .
* The B-C voltage can be several Volts (or even hundreds of Volts), and is limited by the breakdown voltage
of the B-C junction.

M. B. Patil, IIT Bombay

BJT in active mode

E p n p C E C E n p n C E C
IE IC IE IC IE IC IE IC
IB IB IB
IB
B B B B

* In the active mode of a BJT, the B-E junction is under forward bias, and the B-C junction is under
reverse bias.
- For a pnp transistor, VEB > 0 V , and VCB < 0 V .
- For an npn transistor, VBE > 0 V , and VBC < 0 V .
* Since the B-E junction is under forward bias, the voltage (magnitude) is typically 0.6 to 0.75 V .
* The B-C voltage can be several Volts (or even hundreds of Volts), and is limited by the breakdown voltage
of the B-C junction.
* The symbol for a BJT includes an arrow for the emitter terminal, its direction indicating the current
direction when the transistor is in active mode.

M. B. Patil, IIT Bombay

BJT in active mode

E p n p C E C E n p n C E C
IE IC IE IC IE IC IE IC
IB IB IB
IB
B B B B

* In the active mode of a BJT, the B-E junction is under forward bias, and the B-C junction is under
reverse bias.
- For a pnp transistor, VEB > 0 V , and VCB < 0 V .
- For an npn transistor, VBE > 0 V , and VBC < 0 V .
* Since the B-E junction is under forward bias, the voltage (magnitude) is typically 0.6 to 0.75 V .
* The B-C voltage can be several Volts (or even hundreds of Volts), and is limited by the breakdown voltage
of the B-C junction.
* The symbol for a BJT includes an arrow for the emitter terminal, its direction indicating the current
direction when the transistor is in active mode.
* Analog circuits, including amplifiers, are generally designed to ensure that the BJTs are operating in the
active mode.

M. B. Patil, IIT Bombay

BJT in active mode

E p n p C E C E n p n C E C
IE IC IE IC IE IC IE IC
IB IB IB
IB
B B B B

IE IE
E C E C
IE IC IE IC
IB IB
B B

M. B. Patil, IIT Bombay

BJT in active mode

E p n p C E C E n p n C E C
IE IC IE IC IE IC IE IC
IB IB IB
IB
B B B B

IE IE
E C E C
IE IC IE IC
IB IB
B B

* In the active mode, IC = IE , 1 (slightly less than 1).

M. B. Patil, IIT Bombay

BJT in active mode

E p n p C E C E n p n C E C
IE IC IE IC IE IC IE IC
IB IB IB
IB
B B B B

IE IE
E C E C
IE IC IE IC
IB IB
B B

* In the active mode, IC = IE , 1 (slightly less than 1).

* IB = IE IC = IE (1 ) .

M. B. Patil, IIT Bombay

BJT in active mode

E p n p C E C E n p n C E C
IE IC IE IC IE IC IE IC
IB IB IB
IB
B B B B

IE IE
E C E C
IE IC IE IC
IB IB
B B

* In the active mode, IC = IE , 1 (slightly less than 1).

* IB = IE IC = IE (1 ) .
* The ratio IC /IB is defined as the current gain of the transistor.
IC
= = .
IB 1

M. B. Patil, IIT Bombay

BJT in active mode

E p n p C E C E n p n C E C
IE IC IE IC IE IC IE IC
IB IB IB
IB
B B B B

IE IE
E C E C
IE IC IE IC
IB IB
B B

* In the active mode, IC = IE , 1 (slightly less than 1).

* IB = IE IC = IE (1 ) .
* The ratio IC /IB is defined as the current gain of the transistor.
IC
= = .
IB 1
* is a function of IC and temperature. However, we will generally treat it as a constant, a useful
approximation to simplify things and still get a good insight.

M. B. Patil, IIT Bombay

BJT in active mode

E p n p C E C E n p n C E C
IE IC IE IC IE IC IE IC
IB IB IB
IB
B B B B

IE IE
E C E C
IE IC IE IC
IB IB
B B

IC
= =
IB 1

M. B. Patil, IIT Bombay

BJT in active mode

E p n p C E C E n p n C E C
IE IC IE IC IE IC IE IC
IB IB IB
IB
B B B B

IE IE
E C E C
IE IC IE IC
IB IB
B B

IC
= =
IB 1

0.9 9
0.95 19
0.99 99
0.995 199

M. B. Patil, IIT Bombay

BJT in active mode

E p n p C E C E n p n C E C
IE IC IE IC IE IC IE IC
IB IB IB
IB
B B B B

IE IE
E C E C
IE IC IE IC
IB IB
B B

IC
= =
IB 1
* increases substantially as 1.

0.9 9
0.95 19
0.99 99
0.995 199

M. B. Patil, IIT Bombay

BJT in active mode

E p n p C E C E n p n C E C
IE IC IE IC IE IC IE IC
IB IB IB
IB
B B B B

IE IE
E C E C
IE IC IE IC
IB IB
B B

IC
= =
IB 1
* increases substantially as 1.
* Transistors are generally designed to get a high value of
(typically 100 to 250, but can be as high as 2000 for
0.9 9
super- transistors).
0.95 19
0.99 99
0.995 199

M. B. Patil, IIT Bombay

BJT in active mode

E p n p C E C E n p n C E C
IE IC IE IC IE IC IE IC
IB IB IB
IB
B B B B

IE IE
E C E C
IE IC IE IC
IB IB
B B

IC
= =
IB 1
* increases substantially as 1.
* Transistors are generally designed to get a high value of
(typically 100 to 250, but can be as high as 2000 for
0.9 9
super- transistors).
0.95 19
* A large IB  IC or IE when the transistor is in the
0.99 99 active mode.
0.995 199

M. B. Patil, IIT Bombay

A simple BJT circuit

1k RC

C 10 V
100 k VCC
= 100
RB B
VBB E
2V
A simple BJT circuit

10 V VCC

1k RC 1k RC

C 10 V
VCC n
100 k 100 k p
= 100
RB B VBB RB
2V n
VBB E
2V
A simple BJT circuit
10 V VCC

10 V VCC 1k RC

1k RC 1k RC IC

C 10 V
VCC n
100 k 100 k p 100 k IE
= 100
RB B VBB RB VBB RB IB
2V n 2V
VBB E
2V IE

M. B. Patil, IIT Bombay

A simple BJT circuit
10 V VCC

10 V VCC 1k RC

1k RC 1k RC IC

C 10 V
VCC n
100 k 100 k p 100 k IE
= 100
RB B VBB RB VBB RB IB
2V n 2V
VBB E
2V IE

Assume the BJT to be in the active mode VBE = 0.7 V and IC = IE = IB .

M. B. Patil, IIT Bombay

A simple BJT circuit
10 V VCC

10 V VCC 1k RC

1k RC 1k RC IC

C 10 V
VCC n
100 k 100 k p 100 k IE
= 100
RB B VBB RB VBB RB IB
2V n 2V
VBB E
2V IE

Assume the BJT to be in the active mode VBE = 0.7 V and IC = IE = IB .

VBB VBE 2 V 0.7 V
IB = = = 13 A.
RB 100 k

M. B. Patil, IIT Bombay

A simple BJT circuit
10 V VCC

10 V VCC 1k RC

1k RC 1k RC IC

C 10 V
VCC n
100 k 100 k p 100 k IE
= 100
RB B VBB RB VBB RB IB
2V n 2V
VBB E
2V IE

Assume the BJT to be in the active mode VBE = 0.7 V and IC = IE = IB .

VBB VBE 2 V 0.7 V
IB = = = 13 A.
RB 100 k
IC = IB = 100 13 A = 1.3 mA.

M. B. Patil, IIT Bombay

A simple BJT circuit
10 V VCC

10 V VCC 1k RC

1k RC 1k RC IC

C 10 V
VCC n
100 k 100 k p 100 k IE
= 100
RB B VBB RB VBB RB IB
2V n 2V
VBB E
2V IE

Assume the BJT to be in the active mode VBE = 0.7 V and IC = IE = IB .

VBB VBE 2 V 0.7 V
IB = = = 13 A.
RB 100 k
IC = IB = 100 13 A = 1.3 mA.
VC = VCC IC RC = 10 V 1.3 mA 1 k = 8.7 V .

M. B. Patil, IIT Bombay

A simple BJT circuit
10 V VCC

10 V VCC 1k RC

1k RC 1k RC IC

C 10 V
VCC n
100 k 100 k p 100 k IE
= 100
RB B VBB RB VBB RB IB
2V n 2V
VBB E
2V IE

Assume the BJT to be in the active mode VBE = 0.7 V and IC = IE = IB .

VBB VBE 2 V 0.7 V
IB = = = 13 A.
RB 100 k
IC = IB = 100 13 A = 1.3 mA.
VC = VCC IC RC = 10 V 1.3 mA 1 k = 8.7 V .
Let us check whether our assumption of active mode is correct. We need to check whether the B-C junction is
under reverse bias.

M. B. Patil, IIT Bombay

A simple BJT circuit
10 V VCC

10 V VCC 1k RC

1k RC 1k RC IC

C 10 V
VCC n
100 k 100 k p 100 k IE
= 100
RB B VBB RB VBB RB IB
2V n 2V
VBB E
2V IE

Assume the BJT to be in the active mode VBE = 0.7 V and IC = IE = IB .

VBB VBE 2 V 0.7 V
IB = = = 13 A.
RB 100 k
IC = IB = 100 13 A = 1.3 mA.
VC = VCC IC RC = 10 V 1.3 mA 1 k = 8.7 V .
Let us check whether our assumption of active mode is correct. We need to check whether the B-C junction is
under reverse bias.
VBC = VB VC = 0.7 V 8.7 V = 8.0 V ,
i.e., the B-C junction is indeed under reverse bias.
M. B. Patil, IIT Bombay
A simple BJT circuit: continued

10 V VCC

10 V VCC 1k RC

1k RC 1k RC IC

C 10 V
VCC n
10 k 10 k p 10 k IE
= 100
RB B VBB RB VBB RB IB
2V n 2V
VBB E
2V IE

What happens if RB is changed from 100 k to 10 k?

M. B. Patil, IIT Bombay

A simple BJT circuit: continued

10 V VCC

10 V VCC 1k RC

1k RC 1k RC IC

C 10 V
VCC n
10 k 10 k p 10 k IE
= 100
RB B VBB RB VBB RB IB
2V n 2V
VBB E
2V IE

What happens if RB is changed from 100 k to 10 k?

Assuming the BJT to be in the active mode again, we have VBE 0.7 V , and IC = IB .

M. B. Patil, IIT Bombay

A simple BJT circuit: continued

10 V VCC

10 V VCC 1k RC

1k RC 1k RC IC

C 10 V
VCC n
10 k 10 k p 10 k IE
= 100
RB B VBB RB VBB RB IB
2V n 2V
VBB E
2V IE

What happens if RB is changed from 100 k to 10 k?

Assuming the BJT to be in the active mode again, we have VBE 0.7 V , and IC = IB .
VBB VBE 2 V 0.7 V
IB = = = 130 A
RB 10 k

M. B. Patil, IIT Bombay

A simple BJT circuit: continued

10 V VCC

10 V VCC 1k RC

1k RC 1k RC IC

C 10 V
VCC n
10 k 10 k p 10 k IE
= 100
RB B VBB RB VBB RB IB
2V n 2V
VBB E
2V IE

What happens if RB is changed from 100 k to 10 k?

Assuming the BJT to be in the active mode again, we have VBE 0.7 V , and IC = IB .
VBB VBE 2 V 0.7 V
IB = = = 130 A IC = IB = 100 130 A = 13 mA.
RB 10 k

M. B. Patil, IIT Bombay

A simple BJT circuit: continued

10 V VCC

10 V VCC 1k RC

1k RC 1k RC IC

C 10 V
VCC n
10 k 10 k p 10 k IE
= 100
RB B VBB RB VBB RB IB
2V n 2V
VBB E
2V IE

What happens if RB is changed from 100 k to 10 k?

Assuming the BJT to be in the active mode again, we have VBE 0.7 V , and IC = IB .
VBB VBE 2 V 0.7 V
IB = = = 130 A IC = IB = 100 130 A = 13 mA.
RB 10 k
VC = VCC IC RC = 10 V 13 mA 1 k = 3 V

M. B. Patil, IIT Bombay

A simple BJT circuit: continued

10 V VCC

10 V VCC 1k RC

1k RC 1k RC IC

C 10 V
VCC n
10 k 10 k p 10 k IE
= 100
RB B VBB RB VBB RB IB
2V n 2V
VBB E
2V IE

What happens if RB is changed from 100 k to 10 k?

Assuming the BJT to be in the active mode again, we have VBE 0.7 V , and IC = IB .
VBB VBE 2 V 0.7 V
IB = = = 130 A IC = IB = 100 130 A = 13 mA.
RB 10 k
VC = VCC IC RC = 10 V 13 mA 1 k = 3 V
VBC = VB VC = 0.7 V (3) V = 3.7 V .

M. B. Patil, IIT Bombay

A simple BJT circuit: continued

10 V VCC

10 V VCC 1k RC

1k RC 1k RC IC

C 10 V
VCC n
10 k 10 k p 10 k IE
= 100
RB B VBB RB VBB RB IB
2V n 2V
VBB E
2V IE

What happens if RB is changed from 100 k to 10 k?

Assuming the BJT to be in the active mode again, we have VBE 0.7 V , and IC = IB .
VBB VBE 2 V 0.7 V
IB = = = 130 A IC = IB = 100 130 A = 13 mA.
RB 10 k
VC = VCC IC RC = 10 V 13 mA 1 k = 3 V
VBC = VB VC = 0.7 V (3) V = 3.7 V .
VBC is not only positive, it is huge!
The BJT cannot be in the active mode, and we need to take another look at the circuit.
M. B. Patil, IIT Bombay
Ebers-Moll model for a pnp transistor
Active mode (forward active mode): B-E in f.b. B-C in r.b.

IE
E p n p C E C E C
IE IC IE IC IE IC
IB IB IB
B B B
Ebers-Moll model for a pnp transistor
Active mode (forward active mode): B-E in f.b. B-C in r.b.

IE
E p n p C E C E C
IE IC IE IC IE IC
IB IB IB
B B B

Reverse active mode: B-E in r.b. B-C in f.b.

R (IC ) IC
E p n p C E C E C
IE IC IE IC IE IC
IB IB IB
B B B

M. B. Patil, IIT Bombay

Ebers-Moll model for a pnp transistor
Active mode (forward active mode): B-E in f.b. B-C in r.b.

IE
E p n p C E C E C
IE IC IE IC IE IC
IB IB IB
B B B

Reverse active mode: B-E in r.b. B-C in f.b.

R (IC ) IC
E p n p C E C E C
IE IC IE IC IE IC
IB IB IB
B B B

In the reverse active mode, emitter collector. (However, we continue to refer to the terminals with their
original names.)

M. B. Patil, IIT Bombay

Ebers-Moll model for a pnp transistor
Active mode (forward active mode): B-E in f.b. B-C in r.b.

IE
E p n p C E C E C
IE IC IE IC IE IC
IB IB IB
B B B

Reverse active mode: B-E in r.b. B-C in f.b.

R (IC ) IC
E p n p C E C E C
IE IC IE IC IE IC
IB IB IB
B B B

In the reverse active mode, emitter collector. (However, we continue to refer to the terminals with their
original names.)
The two s, F (forward ) and R (reverse ) are generally quite different.

M. B. Patil, IIT Bombay

Ebers-Moll model for a pnp transistor
Active mode (forward active mode): B-E in f.b. B-C in r.b.

IE
E p n p C E C E C
IE IC IE IC IE IC
IB IB IB
B B B

Reverse active mode: B-E in r.b. B-C in f.b.

R (IC ) IC
E p n p C E C E C
IE IC IE IC IE IC
IB IB IB
B B B

In the reverse active mode, emitter collector. (However, we continue to refer to the terminals with their
original names.)
The two s, F (forward ) and R (reverse ) are generally quite different.
Typically, F > 0.98, and R is in the range from 0.02 to 0.5.

M. B. Patil, IIT Bombay

Ebers-Moll model for a pnp transistor
Active mode (forward active mode): B-E in f.b. B-C in r.b.

IE
E p n p C E C E C
IE IC IE IC IE IC
IB IB IB
B B B

Reverse active mode: B-E in r.b. B-C in f.b.

R (IC ) IC
E p n p C E C E C
IE IC IE IC IE IC
IB IB IB
B B B

In the reverse active mode, emitter collector. (However, we continue to refer to the terminals with their
original names.)
The two s, F (forward ) and R (reverse ) are generally quite different.
Typically, F > 0.98, and R is in the range from 0.02 to 0.5.
The corresponding current gains (F and R ) differ significantly, since = /(1 ).

M. B. Patil, IIT Bombay

Ebers-Moll model for a pnp transistor
Active mode (forward active mode): B-E in f.b. B-C in r.b.

IE
E p n p C E C E C
IE IC IE IC IE IC
IB IB IB
B B B

Reverse active mode: B-E in r.b. B-C in f.b.

R (IC ) IC
E p n p C E C E C
IE IC IE IC IE IC
IB IB IB
B B B

In the reverse active mode, emitter collector. (However, we continue to refer to the terminals with their
original names.)
The two s, F (forward ) and R (reverse ) are generally quite different.
Typically, F > 0.98, and R is in the range from 0.02 to 0.5.
The corresponding current gains (F and R ) differ significantly, since = /(1 ).
In amplifiers, the BJT is biased in the forward active mode (simply called the active mode) in order to make
use of the higher value of in that mode. M. B. Patil, IIT Bombay
Ebers-Moll model for a pnp transistor

The Ebers-Moll model combines the forward and reverse operations of a BJT in a single comprehensive model.

E p n p C IE F IE
IE IC
IE D1 IC
IB
E C
B
(p) D2 (p)
E C R IC
IE IC IB IC
IB (n) B
B

M. B. Patil, IIT Bombay

Ebers-Moll model for a pnp transistor

The Ebers-Moll model combines the forward and reverse operations of a BJT in a single comprehensive model.

E p n p C IE F IE
IE IC
IE D1 IC
IB
E C
B
(p) D2 (p)
E C R IC
IE IC IB IC
IB (n) B
B

The currents IE0 and IC0 are given by the Shockley diode equation:
       
VEB VCB
IE0 = IES exp 1 , IC0 = ICS exp 1 .
VT VT

M. B. Patil, IIT Bombay

Ebers-Moll model for a pnp transistor

The Ebers-Moll model combines the forward and reverse operations of a BJT in a single comprehensive model.

E p n p C IE F IE
IE IC
IE D1 IC
IB
E C
B
(p) D2 (p)
E C R IC
IE IC IB IC
IB (n) B
B

The currents IE0 and IC0 are given by the Shockley diode equation:
       
VEB VCB
IE0 = IES exp 1 , IC0 = ICS exp 1 .
VT VT

Mode B-E B-C

Forward active forward reverse IE0  IC0
Reverse active reverse forward IC0  IE0
Saturation forward forward IE0 and IC0 are comparable.
Cut-off reverse reverse IE0 and IC0 are negliglbe.

M. B. Patil, IIT Bombay

Ebers-Moll model

pnp transistor

E p n p C IE F IE
IE IC
IE D1 IC IE = IES [exp(VEB /VT ) 1]
IB
E C
B
(p) D2 (p) IC = ICS [exp(VCB /VT ) 1]
E C
IE IC R IC IC
IB
IB (n) B
B

npn transistor

E n p n C IE F IE
IE IC
IE D1 IC IE = IES [exp(VBE /VT ) 1]
IB
E C
B
(n) D2 (n) IC = ICS [exp(VBC /VT ) 1]
E C
IE IC R IC IC
IB
IB (p) B
B
M. B. Patil, IIT Bombay
Ebers-Moll model

pnp transistor

E p n p C IE F IE
IE IC
IE D1 IC IE = IES [exp(VEB /VT ) 1]
IB
E C
B
(p) D2 (p) IC = ICS [exp(VCB /VT ) 1]
E C
IE IC R IC IC
IB
IB (n) B
B

npn transistor
STOP
E n p n C IE F IE
IE IC
IE D1 IC IE = IES [exp(VBE /VT ) 1]
IB
E C
B
(n) D2 (n) IC = ICS [exp(VBC /VT ) 1]
E C
IE IC R IC IC
IB
IB (p) B
B
M. B. Patil, IIT Bombay
Ebers-Moll model in active mode

M. B. Patil, IIT Bombay

Ebers-Moll model in active mode

pnp transistor

E p n p C IE F IE
IE IC
IE D1 IC IE = IES [exp(VEB /VT ) 1]
IB
E C
B
(p) D2 (p) IC = ICS [exp(VCB /VT ) 1]
E C
IE IC R IC IC
IB IC = F IE = F IB
IB (n) B
B

npn transistor

E n p n C IE F IE
IE IC
IE D1 IC IE = IES [exp(VBE /VT ) 1]
IB
E C
B
(n) D2 (n) IC = ICS [exp(VBC /VT ) 1]
E C
IE IC R IC IC
IB IC = F IE = F IB
IB (p) B
B

M. B. Patil, IIT Bombay

BJT I -V characteristics

IC
VCB
p n
B VCE
IB n
VBE IE

M. B. Patil, IIT Bombay

BJT I -V characteristics

IC
VCB
p n
B VCE
IB n
VBE IE

* Since BJT is a three-terminal device, its behaviour can be described in many different ways, e.g.,

M. B. Patil, IIT Bombay

BJT I -V characteristics

IC
VCB
p n
B VCE
IB n
VBE IE

* Since BJT is a three-terminal device, its behaviour can be described in many different ways, e.g.,
- IC versus VCB for different values of IE

M. B. Patil, IIT Bombay

BJT I -V characteristics

IC
VCB
p n
B VCE
IB n
VBE IE

* Since BJT is a three-terminal device, its behaviour can be described in many different ways, e.g.,
- IC versus VCB for different values of IE
- IC versus VCE for different values of VBE

M. B. Patil, IIT Bombay

BJT I -V characteristics

IC
VCB
p n
B VCE
IB n
VBE IE

* Since BJT is a three-terminal device, its behaviour can be described in many different ways, e.g.,
- IC versus VCB for different values of IE
- IC versus VCE for different values of VBE
- IC versus VCE for different values of IB

M. B. Patil, IIT Bombay

BJT I -V characteristics

IC
VCB
p n
B VCE
IB n
VBE IE

* Since BJT is a three-terminal device, its behaviour can be described in many different ways, e.g.,
- IC versus VCB for different values of IE
- IC versus VCE for different values of VBE
- IC versus VCE for different values of IB
* The I -V relationship for a BJT is not a single curve but a family of curves or characteristics.

M. B. Patil, IIT Bombay

BJT I -V characteristics

IC
VCB
p n
B VCE
IB n
VBE IE

* Since BJT is a three-terminal device, its behaviour can be described in many different ways, e.g.,
- IC versus VCB for different values of IE
- IC versus VCE for different values of VBE
- IC versus VCE for different values of IB
* The I -V relationship for a BJT is not a single curve but a family of curves or characteristics.
* The IC -VCE characteristics for different IB values are useful in understanding amplifier biasing.

M. B. Patil, IIT Bombay

 BJT I -V characteristics

VCE
E C
IE IC
IB
B
IB0
10 A

F
F = 0.99 F = = 99
1 F
R
R = 0.5 R = =1
1 R
IES = 1 1014 A
ICS = 2 1014 A
 BJT I -V characteristics

VCE
IE F IE
VCE
IE D1 IC
E C
E C
IE IC (n) D2 (n)
IB R IC
B IB IC
IB0 (p) B
10 A IB0
10 A
F
F = 0.99 F = = 99
1 F
R IE = IES [exp(VBE /VT ) 1]
R = 0.5 R = =1
1 R
IC = ICS [exp(VBC /VT ) 1]
IES = 1 1014 A
ICS = 2 1014 A IC = F IE = F IB in active mode
 BJT I -V characteristics
1.0

VCE 0.5 VBE (Volts)

IE 0.0
F IE
VCE 0.5 VBC (Volts)
IE D1 IC
E C
E C 1.0
IE IC (n) D2 (n)
1.5
IB R IC 20
B IB IC
IB0 (p) B IC (A)
10 A IB0 10
10 A
F
F = 0.99 F = = 99
1 F
R IE = IES [exp(VBE /VT ) 1] 0
R = 0.5 R = =1
1 R 1.2
IC = ICS [exp(VBC /VT ) 1] sat lin
IES = 1 1014 A
ICS = 2 10 14
A IC = F IE = F IB in active mode 0.8

0.4
IC (mA)
0
IE (mA)

VCE :0 0.5 1 1.5 2

 BJT I -V characteristics
1.0

VCE 0.5 VBE (Volts)

IE 0.0
F IE
VCE 0.5 VBC (Volts)
IE D1 IC
E C
E C 1.0
IE IC (n) D2 (n)
1.5
IB R IC 20
B IB IC
IB0 (p) B IC (A)
10 A IB0 10
10 A
F
F = 0.99 F = = 99
1 F
R IE = IES [exp(VBE /VT ) 1] 0
R = 0.5 R = =1
1 R 1.2
IC = ICS [exp(VBC /VT ) 1] sat lin
IES = 1 1014 A
ICS = 2 10 14
A IC = F IE = F IB in active mode 0.8

0.4
* linear region: B-E under forward bias, B-C under reverse bias, IC = F IB IC (mA)
* saturation region: B-E under forward bias, B-C under forward bias, IC < F IB 0
IE (mA)

VCE :0 0.5 1 1.5 2

M. B. Patil, IIT Bombay
 BJT I -V characteristics

1.0
VCE
0.5 VBE (Volts)
IE F IE
VCE 0.0
IE D1 IC
E C VBC (Volts)
E
IE IC (n) D2 C 0.5
(n)
IB R IC
B IB IC 1.0
10 A (p) B
1.5
10 A
sat lin
2
F
F = 0.99 F = = 99
1 F
R IE = IES [exp(VBE /VT ) 1]
R = 0.5 R = =1
1 R
IC = ICS [exp(VBC /VT ) 1]
IES = 1 1014 A 1
IC = F IE = F IB in active mode IB = 10 A
ICS = 2 1014 A

* linear region: B-E under forward bias, B-C under reverse bias, IC = F IB IC (mA)
0
* saturation region: B-E under forward bias, B-C under forward bias, IC < F IB 0 0.5 1 1.5 2
VCE (Volts)
 BJT I -V characteristics

1.0
VCE
0.5 VBE (Volts)
IE F IE
VCE 0.0
IE D1 IC
E C VBC (Volts)
E
IE IC (n) D2 C 0.5
(n)
IB R IC
B IB IC 1.0
10 A (p) B
20 A 1.5
10 A
20 A sat lin
2
F IB = 20 A
F = 0.99 F = = 99
1 F
R IE = IES [exp(VBE /VT ) 1]
R = 0.5 R = =1
1 R
IC = ICS [exp(VBC /VT ) 1]
IES = 1 1014 A 1
IC = F IE = F IB in active mode IB = 10 A
ICS = 2 1014 A

* linear region: B-E under forward bias, B-C under reverse bias, IC = F IB IC (mA)
0
* saturation region: B-E under forward bias, B-C under forward bias, IC < F IB 0 0.5 1 1.5 2
VCE (Volts)

M. B. Patil, IIT Bombay

A simple BJT circuit (revisited)

10 V VCC

1k RC
= 100 IC
n
p

VBB RB I B n
2V
IE

We are now in a position to explain what happens when RB is decreased from 100 k to 10 k in the above circuit.
A simple BJT circuit (revisited)

10 V VCC

1k RC
= 100 IC
n
p

VBB RB I B n
2V
IE

We are now in a position to explain what happens when RB is decreased from 100 k to 10 k in the above circuit.
VBB 0.7 V
Let us plot IC VCE curves for IB for the two values of RB .
RB
A simple BJT circuit (revisited)
saturation

linear
10 V VCC 15

1k RC IB = 130 A (RB = 10 k)
10
= 100 IC

IC (mA)
n
p
5
VBB RB I B n
2V
IE IB = 13 A (RB = 100 k)

0
0 2 4 6 8 10
VCE (V)

We are now in a position to explain what happens when RB is decreased from 100 k to 10 k in the above circuit.
VBB 0.7 V
Let us plot IC VCE curves for IB for the two values of RB .
RB
A simple BJT circuit (revisited)
saturation

linear
10 V VCC 15

1k RC IB = 130 A (RB = 10 k)
10
= 100 IC

IC (mA)
n
p
5
VBB RB I B n
2V
IE IB = 13 A (RB = 100 k)

0
0 2 4 6 8 10
VCE (V)

We are now in a position to explain what happens when RB is decreased from 100 k to 10 k in the above circuit.
VBB 0.7 V
Let us plot IC VCE curves for IB for the two values of RB .
RB
In addition to the BJT IC VCE curve, the circuit variables must also satisfy the constraint,
VCC = VCE + IC RC , a straight line in the IC VCE plane.
A simple BJT circuit (revisited)
saturation

linear
10 V VCC 15

1k RC IB = 130 A (RB = 10 k)
10
= 100 IC

IC (mA)
n load line
p
5
VBB RB I B n
2V
IE IB = 13 A (RB = 100 k)

0
0 2 4 6 8 10
VCE (V)

We are now in a position to explain what happens when RB is decreased from 100 k to 10 k in the above circuit.
VBB 0.7 V
Let us plot IC VCE curves for IB for the two values of RB .
RB
In addition to the BJT IC VCE curve, the circuit variables must also satisfy the constraint,
VCC = VCE + IC RC , a straight line in the IC VCE plane.
A simple BJT circuit (revisited)
saturation

linear
10 V VCC 15

1k RC IB = 130 A (RB = 10 k)
10
= 100 IC

IC (mA)
n load line
p
5
VBB RB I B n
2V
IE IB = 13 A (RB = 100 k)

0
0 2 4 6 8 10
VCE (V)

We are now in a position to explain what happens when RB is decreased from 100 k to 10 k in the above circuit.
VBB 0.7 V
Let us plot IC VCE curves for IB for the two values of RB .
RB
In addition to the BJT IC VCE curve, the circuit variables must also satisfy the constraint,
VCC = VCE + IC RC , a straight line in the IC VCE plane.
The intersection of the load line and the BJT characteristics gives the solution for the circuit. For RB = 10 k,
note that the BJT operates in the saturation region, leading to VCE 0.2 V , and IC = 9.8 mA.
M. B. Patil, IIT Bombay
BJT circuit example

Assuming the transistor to be operating in the active region, find RE and RC to obtain IE = 2 mA, and
VBC = 1 V ( 1).

IE E C IC

RE B RC
5V 5V

VEE VCC

M. B. Patil, IIT Bombay

BJT circuit example

Assuming the transistor to be operating in the active region, find RE and RC to obtain IE = 2 mA, and
VBC = 1 V ( 1).

IE E C IC

RE B RC
5V 5V

VEE VCC

VEB VEE + IE RE = 0

M. B. Patil, IIT Bombay

BJT circuit example

Assuming the transistor to be operating in the active region, find RE and RC to obtain IE = 2 mA, and
VBC = 1 V ( 1).

IE E C IC

RE B RC
5V 5V

VEE VCC

VEB VEE + IE RE = 0 IE RE = 5 0.7

M. B. Patil, IIT Bombay

BJT circuit example

Assuming the transistor to be operating in the active region, find RE and RC to obtain IE = 2 mA, and
VBC = 1 V ( 1).

IE E C IC

RE B RC
5V 5V

VEE VCC

4.3 V
VEB VEE + IE RE = 0 IE RE = 5 0.7 RE = = 2.15 k.
2 mA

M. B. Patil, IIT Bombay

BJT circuit example

Assuming the transistor to be operating in the active region, find RE and RC to obtain IE = 2 mA, and
VBC = 1 V ( 1).

IE E C IC

RE B RC
5V 5V

VEE VCC

4.3 V
VEB VEE + IE RE = 0 IE RE = 5 0.7 RE = = 2.15 k.
2 mA
VBC + IC RC VCC = 0

M. B. Patil, IIT Bombay

BJT circuit example

Assuming the transistor to be operating in the active region, find RE and RC to obtain IE = 2 mA, and
VBC = 1 V ( 1).

IE E C IC

RE B RC
5V 5V

VEE VCC

4.3 V
VEB VEE + IE RE = 0 IE RE = 5 0.7 RE = = 2.15 k.
2 mA
VBC + IC RC VCC = 0 IC RC = VCC VBC .

M. B. Patil, IIT Bombay

BJT circuit example

Assuming the transistor to be operating in the active region, find RE and RC to obtain IE = 2 mA, and
VBC = 1 V ( 1).

IE E C IC

RE B RC
5V 5V

VEE VCC

4.3 V
VEB VEE + IE RE = 0 IE RE = 5 0.7 RE = = 2.15 k.
2 mA
VBC + IC RC VCC = 0 IC RC = VCC VBC .

Since 1, IC IE

M. B. Patil, IIT Bombay

BJT circuit example

Assuming the transistor to be operating in the active region, find RE and RC to obtain IE = 2 mA, and
VBC = 1 V ( 1).

IE E C IC

RE B RC
5V 5V

VEE VCC

4.3 V
VEB VEE + IE RE = 0 IE RE = 5 0.7 RE = = 2.15 k.
2 mA
VBC + IC RC VCC = 0 IC RC = VCC VBC .
4V
Since 1, IC IE IE RC 5 1 RC = = 2 k.
2 mA

M. B. Patil, IIT Bombay