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BCR22PN

NPN/PNP Silicon Digital Transistor Array

Switching circuit, inverter, interface circuit,


driver circuit 4
5 3
Two (galvanic) internal isolated NPN/PNP 6 2
1
Transistors in one package
Built in bias resistor NPN and PNP
(R1=22 k, R2 =22 k)
C1 B2 E2

Pb-free (RoHS compliant) package 6 5 4

Qualified according AEC Q101


R2
R1 TR2
TR1 R1

R2

1 2 3

E1 B1 C2

Tape loading orientation


EHA07176

Marking on SOT-363 package


Top View
(for example W1s)
654 corresponds to pin 1 of device
W1s
123 Position in tape: pin 1
opposite of feed hole side
Direction of Unreeling EHA07193

Type Marking Pin Configuration Package


BCR22PN WPs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

Maximum Ratings for NPN and PNP Types


Parameter Symbol Value Unit
Collector-emitter voltage VCEO 50 V
Collector-base voltage VCBO 50
Input forward voltage Vi(fwd) 60
Input reverse voltage Vi(rev) 10
DC collector current IC 100 mA
Total power dissipation, TS = 115 C Ptot 250 mW
Junction temperature Tj 150 C
Storage temperature Tstg -65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS 140 K/W
1For calculation of R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)

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BCR22PN

Electrical Characteristics at TA=25C, unless otherwise specified


Parameter Symbol Values Unit
min. typ. max.
DC Characteristics for NPN and PNP Types
Collector-emitter breakdown voltage V(BR)CEO 50 - - V
IC = 100 A, IB = 0
Collector-base breakdown voltage V(BR)CBO 50 - -
IC = 10 A, IE = 0
Collector cutoff current ICBO - - 100 nA
VCB = 40 V, IE = 0
Emitter cutoff current IEBO - - 350 A
VEB = 10 V, IC = 0
DC current gain 1) hFE 50 - - -
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage1) VCEsat - - 0.3 V
IC = 10 mA, IB = 0.5 mA
Input off voltage Vi(off) 0.8 - 1.5
IC = 100 A, VCE = 5 V
Input on Voltage Vi(on) 1 - 2.5
IC = 2 mA, VCE = 0.3 V
Input resistor R1 15 22 29 k
Resistor ratio R1/R2 0.9 1 1.1 -

AC Characteristics for NPN and PNP Types


Transition frequency fT - 130 - MHz
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance Ccb - 3 - pF
VCB = 10 V, f = 1 MHz

1) Pulse test: t < 300s; D < 2%

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BCR22PN

NPN Type
DC Current Gain hFE = f (I C) Collector-Emitter Saturation Voltage
VCE = 5V (common emitter configuration) VCEsat = f (IC ), hFE = 20

10 3 1

0.8

VCEsat
0.7
10 2
hFE

0.6
-40 C
-25 C
0.5 25 C
85 C
0.4 125 C
1
10 -40 C
-25 C 0.3
25 C
85 C 0.2
125 C
0.1

10 0 -4 -3 -2 -1 0 -3 -2 -1
10 10 10 A 10 10 10 A 10
IC IC

Input on Voltage Vi(on) = f (IC) Input off voltage Vi(off) = f (IC)


VCE = 0.3V (common emitter configuration) VCE = 5V (common emitter configuration)

10 2 10 1

V -40 C
-40 C -25 C
-25 C V 25 C
25 C 85 C
85 C 125 C
10 1
Vi(on)

Vi(off)

125 C

10 0

10 0

10 -1 -5 -4 -3 -2 -1
10 -1 -5 -4 -3 -2 -1
10 10 10 10 A 10 10 10 10 10 A 10
IC IC

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BCR22PN

PNP Type
DC Current Gain hFE = f (I C) Collector-Emitter Saturation Voltage
VCE = 5V (common emitter configuration) VCEsat = f (IC ), hFE = 20

10 3 1

0.8

VCEsat
0.7
10 2
hFE

0.6

0.5
-40 C
0.4 -25 C
10 1 -40 C 25 C
-25 C 0.3 85 C
25 C 125 C
85 C 0.2
125 C
0.1

10 0 -4 -3 -2 -1 0 -3 -2 -1
10 10 10 A 10 10 10 A 10
IC IC

Input on Voltage Vi(on) = f (IC) Input off voltage Vi(off) = f (IC )


VCE = 0.3V (common emitter configuration) VCE = 5V (common emitter configuration)

10 2 10 1

-40 C
V -25 C
25 C
-40 C V 85 C
-25 C 125 C
25 C
10 1
Vi(on)

Vi(off)

85 C
125 C

10 0

10 0

10 -1 -5 -4 -3 -2 -1
10 -1 -5 -4 -3 -2 -1
10 10 10 10 A 10 10 10 10 10 A 10
IC IC

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BCR22PN

Total power dissipation P tot = f (TS )

300
mW

250

225

200
Ptot

175

150

125

100

75

50

25

0
0 15 30 45 60 75 90 105 120 C 150
TS

Permissible Pulse Load RthJS = f (t p) Permissible Pulse Load


Ptotmax / PtotDC = f (tp )

10 3 10 3

K/W
Ptotmax / PtotDC

10 2
D=0
RthJS

10 2 0.005
0.01
0.02
10 1
0.05
0.5 0.1
0.2 0.2
0.1 0.5
0.05 10 1
0.02
10 0
0.01
0.005
D=0

10 -1 -6 -5 -4 -3 -2 0
10 0 -6 -5 -4 -3 -2 0
10 10 10 10 10 s 10 10 10 10 10 10 s 10
tp tp

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Package SOT363 BCR22PN

Package Outline
2 0.2 0.9 0.1
+0.1 6x
0.2 -0.05 0.1 MAX.
0.1 M
0.1
A
6 5 4

1.25 0.1
2.1 0.1

0.1 MIN.
1 2 3
Pin 1
marking 0.65 0.65 0.15 +0.1
-0.05

0.2 M A

Foot Print

0.3
0.9 0.7

1.6

0.65
0.65

Marking Layout (Example)


Small variations in positioning of
Date code, Type code and Manufacture are possible.

Manufacturer

2005, June
Date code (Year/Month)

Pin 1 marking BCR108S


Laser marking Type code

Standard Packing
Reel 180 mm = 3.000 Pieces/Reel
Reel 330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
4 0.2
8
2.3

Pin 1 2.15 1.1


marking

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BCR22PN

Edition 2009-11-16

Published by
Infineon Technologies AG
81726 Munich, Germany

2009 Infineon Technologies AG


All Rights Reserved.

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee


of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).

Warnings

Due to technical requirements, components may contain dangerous substances.


For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.

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