2SK213, 2SK214, 2SK215, 2SK216

Silicon N-Channel MOS FET

ADE-208-1241 (Z)
1st. Edition
Mar. 2001

Application

High frequency and low frequency power amplifier, high speed switching.

Complementary pair with 2SJ76, J77, J78, J79

Features

Suitable for direct mounting

High forward transfer admittance
Excellent frequency response
Enhancement-mode

Outline

TO-220AB

D 1
2
3
1. Gate
G
2. Source
(Flange)
3. Drain

S
2SK213, 2SK214, 2SK215, 2SK216
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Ratings Unit
Drain to source voltage 2SK213 VDSX 140 V
2SK214 160
2SK215 180
2SK216 200
Gate to source voltage VGSS 15 V
Drain current ID 500 mA
Body to drain diode reverse drain current I DR 500 mA
Channel dissipation Pch 1.75 W
1
Pch* 30 W
Channel temperature Tch 150 C
Storage temperature Tstg 45 to +150 C
Note: 1. Value at TC = 25C

Electrical Characteristics (Ta = 25C)

Item Symbol Min Typ Max Unit Test conditions
Drain to source 2SK213 V(BR)DSX 140 V I D = 1 mA, VGS = 2 V
breakdown voltage 2SK214 160 V
2SK215 180 V
2SK216 200 V
Gate to source breakdown V(BR)GSS 15 V I G = 10 A, VDS = 0
voltag
Gate to source voltage VGS(on) 0.2 1.5 V I D = 10 mA, VDS = 10 V *1
Drain to source saturation VDS(sat) 2.0 V I D = 10 mA, VGD = 0 *1
voltage
Forward transfer admittance |yfs| 20 40 mS I D = 10 mA, VDS = 20 V *1
Input capacitance Ciss 90 pF I D = 10 mA, VDS = 10 V,
Reverse transfer capacitance Crss 2.2 pF f = 1 MHz
Note: 1. Pulse test

2
 2SK213, 2SK214, 2SK215, 2SK216
Typical Output Characteristics
Power vs. Temperature Derating
500
60 3.5 TC = 25C
3.0
Channel Dissipation Pch (W)

400

Drain Current ID (mA)

40 2.5
300
2.0
200
20 1.5

100
1.0
VGS = 0.5 V

0 50 100 150 0 4 8 12 16 20
Case Temperature TC (C) Drain to Source Voltage VDS (V)

Typical Output Characteristics Typical Transfer Characteristics

50 500
TC = 25C 0.8 VDS = 20 V

C
25
40 400

25
Drain Current ID (mA)
Drain Current ID (mA)

=
0.7

75
TC
30 300
0.6

0.5
20 200
0.4
10 0.3 100
0.2
VGS = 0.1V

0 20 40 60 80 100 0 1 2 3 4 5
Drain to Source Voltage VDS (V) Gate Source Voltage VGS (V)

3
2SK213, 2SK214, 2SK215, 2SK216
Forward Transfer Admittance
Typical Transfer Characteristics vs. Drain Current

Forward Transfer Admittance yfs (mS)

100 200
VDS = 20 V

C
100

25
80

25
Drain Current ID (mA)

75
TC =
50
60
20
40
10
TC = 25C
20 5 VDS = 20 V

0 0.4 0.8 1.2 1.6 2.0 2 5 10 20 50 100 200

Gate Source Voltage VGS (V) Drain Current ID (mA)

Forward Transfer Admittance

vs. Frequency
Forward Transfer Admittance yfs (mS)

500

100

10 TC = 25C
VDS = 20 V
ID = 10 mA
1.0

0.1
0.05
5 k 10 k 100 k 1M 10 M 50 M
Frequency f (HZ)

4
 2SK213, 2SK214, 2SK215, 2SK216

Package Dimensions

As of January, 2001
Unit: mm

11.5 MAX

10.16 0.2 4.44 0.2

2.79 0.2

9.5
3.6 -0.08
+0.1
1.26 0.15
8.0 0.1
+0.2
6.4

15.0 0.3
1.27
18.5 0.5

2.7 MAX

1.5 MAX
14.0 0.5
7.8 0.5

0.76 0.1

2.54 0.5 2.54 0.5 0.5 0.1

Hitachi Code TO-220AB

JEDEC Conforms
EIAJ Conforms
Mass (reference value) 1.8 g

5
2SK213, 2SK214, 2SK215, 2SK216

Cautions

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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachis sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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