Resistance Switching Mechanism

Correlated to
Topotactic Phase Transformation

Octolia Togibasa1, Chang Uk Jung2

1. Department of Physics, University of Cenderawasih, Indonesia
2. Department of Physics, Hankuk University of Foreign Studies, Korea.

Asian Physics Symposium. ITB, Bandung, August 19-20, 2015

Acknowledgement
1. Prof. Bo Wha Lee (Hankuk University of Foreign Studies)
2. Prof. Chunli Liu (Hankuk University of Foreign Studies)
3. Prof. Bae Ho Park (Konkuk University)
4. Prof. Ji-Yong Park (Ajou University)
5. Prof. Yun Daniel Park (Seoul National University)
6. Prof. Cheol Seong Hwang (Seoul National University)
7. Prof. Miyoung Kim (Seoul National University)
8. Prof. Woo Seok Choi (Sungkyunkwan University)
9. Prof. Dong Wook Kim (Ewha Womans University
10. Dr. Suyoun Lee (Korea Institute of Science and Technology)

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Outline
1) INTRODUCTION
Resistance Switching Phenomena
Non-Stoichiometric Oxides
Brownmillerite Structure
Motivation
2) EXPERIMENTAL METHODOLOGY
Device Fabrication & Characterization
3) DISCUSSION: Resistance Switching Mechanism Correlated
to Topotactic Phase Transformation
Bipolar Resistance Switching Behavior
Local Crystal Structure at Different Resistance State
VF < VS Mechanism
4) CONCLUSION

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Resistive Switching Phenomena
Definition:
Reversible changes between
an insulating state (high resistance state)
& a conducting state (low resistance state)
Classification
of behavior:

Classification Filament Interface

of mechanism:

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 Non-Stoichiometric Oxides
(1) Basic of Perovskite Oxides (2) Flexibility of Perovskite
ABO3 Structure

Examples: Large variety of compounds

CaTiO3, SrTiO3, and many others Wide range of physical properties &
application
F. C. Galasso, Science Publishers, New York (1990) S. N. Ruddlesden, Acta Crystallogr. 10, 538 (1957)
M. E. Lines & A. M. Glass, Oxford, Clarendon, (1977). A. M. Abakumov, et al. Inorg. Chem. 49, 9508 (2010)

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Brownmillerite Structure
Examples: Ca2(Al,Fe)2O5, Ba2 InGaO5, SrFeO2.5, SrCoO2,5
Brownmillerite Perovskite

MO6 Orthorhombic Cubic

a = 5.545 ac= 3.829

MO4 b = 15.738
c = 15.448
AFM FM
Insulator Metal

Methods reported:
Bulk samples :
an electrochemical cell
SrCoO 2.5 + xO 2- SrCoO 2.5+x + 2 xe- Thin-film samples :
ex-situ chemical oxidation,
in-situ/ex-situ annealing

A. Nemudry et al., Chem. Mater. 8, 2232 (1996)

R. Le Toquin et al., J. Am. Chem. Soc. 128, 13161 (2006) APS 2015, 6
Y. Long et al. J. Phys.: Condens. Matter. 23, 245601 (2011)
Motivation

Insulator (HRS) Conductor (LRS) Insulator Conductor

Resistance Switching Topotactic
Phenomena Phase Transformation
The resistance switching behavior
has not been reported
for brownmillerite-structure material.
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Device Fabrication & Characterization

Film Synthesis: Pulsed Laser Deposition (using KrF laser)

Characterization: HRXRD (Bruker D8 Discovery) & AFM (XE-100)
Device Fabrication: Photolithography, Wet Etching, Metal Deposition (E-beam evaporation)
Characterization: Device structure (TEM, JEOL 2100FS)
I-V (Room Temp., Agilent B1540)
R(T) (Keithley 2636 + CS202*I-DMX-1SS cryogenic system) APS 2015, 8
Cross Point Device: Au/SrCoO2.5 /SrRuO3 /SrTiO3

TE

Cell
area

BE

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Bipolar Resistive Switching
Filamentary-type
10-2 106
(a) 2 (b) (c)
RESET 3 HRS
10-3
SET 105

Resistance ()
-4 4
Current (A)

10 5
LRS
10-5
FORMING 104
1
10-6
VF<VS
10-7
103
-4 -3 -2 -1 0 1 2 3 0 2 4 6 102 103 104
Voltage (V) Time (103 seconds) Area (m2)
(a) IV curves of Au/BM-SCO/SRO (b) Retention data (c) cell-area dependence
The arrows indicate the direction of voltage sweep

VF < VS : indicated a novel resistance switching mechanism

observed in SrCoOx system

Octolia Togibasa Tambunan, et al. Applied Physics Letter (APL), 105, 063507 (2014) APS 2015, 10
 Local Crystal Structure Studies
R(T) for the HRS and LRS TE
BM-SCO, Mix-SCO, and P-SCO Adv. Mater. 25, 3651 (2013)

3 Cell
10 Pristine State/BM-SCO area

102 HRS BE

1 Pristine-state = BM-SCO.
10 LRS HRS ~ BM-SCO
(-cm)

lower resistance value,

100 but similar activation energy
(0.17 ~ 0.19 eV).
10-1 LRS ~ Mix-SCO.
Mix-SCO similar behavior and value
10-2
-3
P-SCO
10
10 100
T (K)
Octolia Togibasa Tambunan, et al. Applied Physics Letter (APL), 105, 063507 (2014) APS 2015, 11
Conventional Mechanism

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Novel Mechanicsm

13
PATENT NO: 10-1537396 (2015-07-10)

MEMORY DEVICE FOR RESISTANCE SWITCHING USING
MATERIAL HAVING A BROWNMILLERITE STRUCTURE

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Conclusion
1) Resistance switching behavior of Brownmillerite structure
(SCO) first observed!
2) New Resistance Switching Mechanism : VF < VS
i) Peculiar Brownmillerite structure
ii) Local topotactic phase transformation
3) Improvement in RS performance is needed
Further reading: Applied Physics Letter, 105, 063507 (2014)

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