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- Device characteristics of enhancement
mode double heterostructure DH-HEMT
with boron-doped GaN gate cap layer for
full-bridge inverter circuit
A. Mohanbabu et al
This paper reviews the physical mechanisms responsible for breakdown current in AlGaN/GaN high electron mobility transistors (HEMTs).
Through a critical comparison between experimental data and previously published results we describe the following mechanisms, which can be
responsible for the increase in drain current at high drain voltage levels, in the off-state: (i) sourcedrain breakdown, due to punch-through effects
and/or to a poor depletion of the buffer; (ii) vertical (drain-bulk) breakdown, which can be particularly prominent when the devices are grown on a
silicon substrate; (iii) breakdown of the gatedrain junction, due either to surface conduction mechanisms or to conduction through the (reverse-
biased) Schottky junction at the gate; (iv) impact ionization triggered by hot electrons, that may induce an increase in drain current due to the
lowering of the barrier for the injection of electrons from the source. 2014 The Japan Society of Applied Physics
500 500
2. Experimental methods VG=-3 V VG=-4 V
500 VG=-6 V
VG=-5.5 V
VG=-5 V
(a) 200
Decreasing VGS
Drain
100
Gate 0
600
Fig. 4. (Color online) Variation of drainsource (sub-threshold) leakage
with varying gate voltage, on a device with LGD = 4 m submitted to current-
400 controlled breakdown measurements. The pinch-off voltage of this device is
2.6 V.
200
VGS=-6V, (b)
0
0 50 100 150 200
Drain-Source Voltage (V)
Conduction band
Inter-valley
Intra-valley
Fig. 5. Equally spaced contours of the magnitude of the current density,
calculated for a device with gate length 0.17 m, with VG = 6 V and
VDS = 20 V. Material boundaries are marked by solid lines, with the
exception of the GaN/AlGaN interface, which is marked with a ne dashed
line. The gate bias is sufcient to prevent conduction in the channel beneath
the gate; however, the combination of high VDS and poor carrier connement
beneath the channel (which arises from the low NA = ND of 1.5 1016 cm3)
allows current to ow deep into the GaN buffer. In the channel beyond the
Valence band gate, the current density is up to a factor of 100 higher than in the current
loop beneath the gate. However, the contours in the channel are very closely
spaced, because the channel is narrow, and appear as a solid black line in the
-valley
gure. 2006 IEEE. Reprinted with permission from Ref. 20.
-3
10
-4 Single
10
heterostructure
Drain Current (A/mm)
-5
10
-6 Double
10 heterostructure
LGD=1m
-7
10
LGD=2m
-8 LGD=3m
10
LGD=4m
-9
10
0 20 40 60 80 100 120 140 160 180 200
Drain-Source Voltage (V)
or totally reduced, through a careful optimization of the 21) M. Meneghini, D. Bisi, D. Marcon, S. Van Hove, T.-L. Wu, S. Decoutere,
G. Meneghesso, and E. Zanoni, IEEE Trans. Power Electron. 29, 2199
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Matteo Meneghini received the Laurea degree Gaudenzio Meneghesso received the B.S. degree in
(summa cum laude) in electronics engineering, with electronic engineering, working on the failure
a thesis on the electrical and optical characterization mechanism induced by hot electrons in MSFET and
of gallium nitride light-emitting diodes (LEDs), and HEMTs, and the Ph. D. degree in electrical and
the Ph. D. degree in the optimization of GaN-based telecommunication engineering from the University
LED and laser structures from the University of of Padova, Padova, Italy, in 1992 and 1997,
Padova, Padova, Italy, in 2004 and 2008, respec- respectively. In 1995, he was with the University of
tively. He is currently assistant professor with the Twente, Enschede, The Netherlands, with a Human
Department of Information Engineering, University Capital and Mobility fellowship (within the
of Padova. He has been involved in several national SUSTAIN Network) working on the dynamic
and European projects on GaN LEDs and high-electron mobility transistors behavior of protection structures against electrostatic discharge (ESD). Since
(HEMTs). He is currently engaged in the electrooptical characterization and 2011, he has been a Full Professor with the Department of Information
modeling of the performance and reliability of InGaN LEDs and lasers and in Engineering, University of Padova. He has published about 600 technical
the characterization of power HEMTs and E-mode transistors. He published papers, of which more than 60 are invited papers and eight have won Best
more than 200 journal and conference proceedings papers and presented Paper Awards at the 1996, 1999, 2007, and 2009 European Symposium on
several invited presentations. His current research interests include the Reliability of Electron Devices, Failure Physics and Analysis (ESREF) and at
characterization, reliability, and simulation of compound semiconductor the 2006 Electrical Overstress/Electrostatic Discharge Symposium. His
devices. He was a recipient of the Carlo Offelli Award for Best Young research interests include electrical characterization, modeling, and reliability
Researcher from the Department of Information Engineering (DEI), of microwave and optoelectronic devices on IIIV and IIIN; electrical
University of Padova, in 2008. He was also a recipient of Best Paper Awards characterization, modeling, and reliability of RF MEMS switches for
at the European Symposium on Reliability of Electron Devices, Failure recongurable antenna arrays; development of ESD protection structures for
Physics and Analysis (ESREF), in 2009 and 2012, and at the International CMOS and SmartPower integrated circuits; and the characterization and
Workshop on Nitrides, in 2012. He is a member of the IEEE International reliability of organic semiconductor devices. Dr. Meneghesso was the
Electron Device Meeting committee, of the Solid State Device Research recipient of the Italian Telecom award for his thesis work in 1993. For several
Conference (ESSDERC) 2013 and 2014 Technical Program Committee and years, he has served on the Executive Committee of the IEEE International
of the technical subcommittees of the ESREF. Electron Devices Meeting as the European Arrangements Chair in 2006 and
2007. He has been serving on the Technical Program Committee (TPC) of the
Enrico Zanoni was born in Verona, Italy, in 1956. IEEE International Reliability Physics Symposium since 2005 and on the
He received the Laurea degree in physics (cum Management Committee since 2009. He is in the Steering Committee of
laude) from the University of Modena and Reggio several international conferences, including the European Solid-State Device
Emilia, Modena, Italy, in 1982, after a student Research Conference, the ESREF, the Workshop on Compound Semi-
internship with the S. Carlo Foundation, Modena. conductor Devices and Integrated Circuits (WOCSDICE), and the European
During 19851988, he was an Assistant Professor Workshop on Heterostructure Technology (HETECH), and has been serving
with the Faculty of Engineering, University of Bari, on the TPC of several international conferences. Since 2007, he has been an
Bari, Italy. From 1988 to 1993, he frequently visited Associate Editor of the IEEE ELECTRON DEVICES LETTERS for the
the U.S. and established research collaborations with compound semiconductor devices area. He has been nominated to IEEE
Bell Laboratories; Hughes Research Laboratories; Fellow Class 2013, with the following citation: for contributions to the
IBM T. J. Watson Research Center; Massachusets Institute of Technology, reliability physics of compound semiconductor devices. In 2010, he joined
Cambridge, MA, USA; TRW (currently, Northrop Grumman); University of the Administrative Committee of the IEEE Electron Devices Society.
California, Santa Barbara, CA, USA; and many other industrial and academic
laboratories. During 19961997, he was a Full Professor of industrial
electronics with the University of Modena and Reggio Emilia. He is currently
with the University of Padova, Padua, Italy, where he was an Assistant
Professor during 19881992, an Associate Professor of electronics during
19921993, a Full Professor of microelectronics during 19931996, and has
been a Full Professor of digital electronics with the Department of
Information Engineering since 1997. He has been a Representative of the
University of Padova for the European project MANPOWER and
Manufacturable Power Monolithic Microwave Integrated Circuits for
Microwave Systems Applications, a European Coordinator for the subproject
Reliability of the European project EUREKA PROMETHEUS (automotive
electronics), a Principal Investigator of the European project Procedures for
the early phase evaluation of reliability of electronic components by the
development of European Committee for Electrotechnical Standardization
(CENELEC) Electronic Components Committee rules on qualication and
reliability of integrated circuits, and a European Coordinator of the
subproject Reliability of the European Defence Agency project Key
Organization for Research on Integrated Circuits in GaN Technology. He is
nationally or locally responsible for several Italian research projects, such as
the Italian Space Agency, the Italian Research Ministry Projects, and the
Italian National Council of Research. He is the author or coauthor of
approximately 450 papers in refereed international journals and conference
roceedings, including more than 35 invited papers. His microelectronics
group is composed of ve professors, three assistant professors, and, on
average, 15 Ph. D. students and two postdoctoral researchers. This research
group publishes approximately 80 papers each year on a wide range of
research topics, including analog and RF signal CMOS design, biochip
development, the analysis of radiation hardness, and the reliability of
electronic devices and circuits. His research interests include microelec-
tronics, particularly concerning the design, characterization, reliability, and
failure analysis of electronic devices and circuits.