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slide 1
FETs versus TBJs
Similaridades:
Amplificadores.
Diferenas:
FETs so dispositivos controlados por tenso. TBJs so
dispositivos controlados por corrente.
FETs tm maior impedncia de entrada. TBJs tm ganho mais alto.
FETs so menos sensveis a variaes de temperatura e mais.
adequados para circuitos integrados.
FETs so geralmente mais estticos que TBJs.
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Tipos de FET
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Construo do JFET
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Caractersticas da operao JFET
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Caractersticas do JFET: VGS=0V
No ponto do pinch-off:
o A ID est em saturao ou em
seu valor mximo, e referida
como IDSS..
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Caractersticas de operao da JFET
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Caractersticas de operao da JFET
ro
rd
VGS
2 medida que a VGS se torna mais negativa, a
1 resistncia (rd) aumenta.
VP
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JFETs de canal p
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Caractersticas do JFET de canal p
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Caractersticas de transferncia do JFET
2
V
ID I
DSS 1 V
GS
P
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Curva de transferncia do JFET
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Transformando a curva de transferncia
do JFET em grfico
Utilizando os valores de IDSS e Vp (VGS(desligado)) encontrados em
uma folha de dados, a curva de transferncia pode ser colocada em
um grfico conforme os passos a seguir:
2
V
ID I GS
DSS 1 V
P
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Transformando a curva de transferncia
do JFET em grfico
Esboce a curva de transferncia para um dispositivo de canal p, com
IDSS=4mA e Vp=3V .
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Folha de dados (JFETs)
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Encapsulamento e identificao dos
terminais
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MOSFETs
Tipo depleo
Tipo intensificao
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Construo do MOSFET tipo depleo
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Operao no modo depleo (D-MOSFET)
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Operao no modo depleo (D-MOSFET)
2
V
ID I
DSS 1 V
GS
P
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Smbolos de MOSFET tipo D
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Folha de dados
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Contruo do MOSFET tipo intensificao
No h canal.
O material de tipo n fica sobre um
substrato tipo p que pode ter uma conexo
terminal chamada de Substrato (SS).
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Operao MOSFET tipo intensificao
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Operao MOSFET tipo intensificao
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Operao MOSFET tipo intensificao
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Curva de transferncia do MOSFET tipo
intensificao
Para determinar a ID dada a VGS:
ID k (VGS VT )2
onde:
VT = a tenso limiar do
E-MOSFET
k, uma constante, pode ser
determinada com a utilizao de
valores de um ponto especfico
e a frmula: VDSsat pode ser calculada utilizando-se:
ID(ON)
k VDSsat VGS VT
(VGS(ON) VT)2
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MOSFETs tipo intensificao de canal p
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Folha de dados
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Manuseio de MOSFETs
Proteo
o Sempre carregue-o em uma bolsa sensvel a esttica.
o Sempre utilize uma tira esttica ao manusear MOSFETS.
o Coloque dispositivos de tenso limitada entre a ponta e a fonte,
como diodos Zener, para limitar qualquer tenso transiente.
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Tabela-resumo
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Circuitos de polarizao FET comum
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Relaes bsicas de corrente
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Configurao com polarizao fixa
VDS VDD I D RD
VS 0 V
VD VDS
VG VGS
VGS VGG
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Configurao com polarizao fixa
VDS VDD I D RD
VS 0 V
VD VDS
VG VGS
VGS VGG
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Configurao com autopolarizao
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Clculos de autopolarizao
VGS ID RS
1. Escolha um valor para ID < IDSS e utilize o valor componente de RS para calcular
a VGS. Coloque no grfico o ponto identificado por ID e VGS e trace uma linha da
origem do eixo at esse ponto.
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Clculos de autopolarizao
VGS ID RS
1. Escolha um valor para ID < IDSS e utilize o valor componente de RS para calcular
a VGS. Coloque no grfico o ponto identificado por ID e VGS e trace uma linha da
origem do eixo at esse ponto.
2. Coloque a curva de transferncia no grfico
utilizando a IDSS e a VP (VP = |VGSdesligado| em
folhas especficas) e alguns pontos como a
VGS = VP / 4 e a VGS = VP / 2 etc.
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Clculos de autopolarizao
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Clculos de autopolarizao
VGS ID RS
1. Escolha um valor para ID < IDSS e utilize o valor componente de RS para calcular
a VGS. Coloque no grfico o ponto identificado por ID e VGS e trace uma linha da
origem do eixo at esse ponto.
2. Coloque a curva de transferncia no grfico
utilizando a IDSS e a VP (VP = |VGSdesligado| em
folhas especficas) e alguns pontos como a
VGS = VP / 4 e a VGS = VP / 2 etc.
O ponto Q est localizado onde a primeira linha
interseciona a curva de transferncia. Utilizando o
valor de ID no ponto Q (IDQ):
VDS VDD ID (RS RD ) VS ID RS VD VDS VS VDD VRD
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Polarizao com divisor de
tenso
IG = 0 A
ID responde s mudanas
em VGS.
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Clculos de polarizao com divisor de
tenso
VG igual tenso ao longo do resistor
divisor R2:
R2VDD
VG
R1 R2
VGS VG ID RS
VGS = VG, ID = 0 A
VGS = 0 V, ID = VG / RS
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Circuitos de polarizao MOSFET tipo
depleo
Circuitos de polarizao
MOSFET tipo depleo so
similares quelas utilizadas
para polarizaes JFETs. A
nica diferena que os
MOSFETs tipo depleo
podem operar com valores
positivos de VGS e com
valores de ID que excedem
a IDSS.
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Ponto Q de autopolarizao (D-MOSFET)
VGS = VG, ID = 0 A
ID = VG /RS, VGS = 0 V
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Circuitos de polarizao MOSFET tipo
intensificao
A curva de transferncia para o MOSFET tipo intensificao
muito diferente daquela de um JFET simples ou de um MOSFET tipo
depleo.
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Circuitos de polarizao com
realimentao (E-MOSFET)
IG 0 A
VRG 0 V
VDS VGS
VGS VDD IDRD
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Ponto Q de polarizao com
realimentao (E-MOSFET)
Trace a linha no grfico que definida por estes dois pontos:
VGS = VDD, ID = 0 A
ID = VDD / RD , VGS = 0 V
VGSTh , ID = 0 A
VGS(on), ID(on)
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Ponto Q de polarizao com
realimentao (E-MOSFET)
R2VDD
VG
R1 R2
VGS VG ID RS
VDS VDD ID (RS RD )
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Ponto Q de polarizao com
divisor de tenso (E-MOSFET)
Trace a linha no grfico utilizando
VGS = VG , ID = 0 A
ID = VG / RS , VGS = 0 V
Utilizando estes valores da folha de dados, trace a curva de
transferncia no grfico:
VGSTh, ID = 0 A
VGS(on) , ID(on)
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Aplicaes
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