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Documente Profesional
Documente Cultură
Fabrication of Memristors
with Poly-Crystalline
Silicon Nanowires
dv 1
dq = C
dϕ
di =L
dq = M
dϕ
The missed equation!
Memory
Resistor
MEMRISTOR
5 µm
Sacchetto et al., ESSDERC’09 S.Carrara, EPFL Lausanne
(Switzerland)
Choi et al., J. Vac. Sci. Tech.
12 B’03
Bottom-Up Techniques for
Poly-silicon Nano-Wires
Au
Based on NW growth Cross-
NW can be differentiated: Core section
Lauhon et al.,
Nature’02
10 µm 1 µm
multi-spacers
poly-Si
spacer
Decoder Nanowires
Contact Group
Nanowire
Frontend Passivation
Testing Backend
Current/Voltage Metalization: NiCr
measurements or Cr/NiCr or Al
EGA − E 2 E − EGD
2
− −
WGA
g GA ( E ) = N GAe g GA ( E ) = N GD e WGD
-9
10
-10
10
-11
10
-20 -10 0 10 20
Gate Voltage (V)
Functionalization Backend
Grafting of bio- Metalization: NiCr
markers or Cr/NiCr or Al
Top-gate
Nitride Passivation
Nano-wire channel
Back Gate
The charging from molecules affects the Memristic
effects onto the poly-silicon channel
S.Carrara, EPFL Lausanne
28
(Switzerland)
Conclusions
• Memristors have been obtained by using poly-
silicon nano-wires
• Poly-silicon nano-wires have been fabricated by
using spacer technique
• Memristic effect has been registered in I/V
characteristics
• 2D simulations confirmed that Memristic effect is
due to charges trapped in the Channel/Gate
interface during deposition
• Future development will be in Nano-Bio-Sensing
Coordinates:
Dr. Sandro Carrara Ph.D
Integrated Laboratory Systems
Swiss Federal Institute of Technology (EPFL)
CH-1015 Lausanne
Web: http://si2.epfl.ch/~scarrara/
email: sandro.carrara@epfl.ch