The 2014 International Power Electronics Conference

DESIGN OF HIG H -SPEED IGBT-BASED

SWI TCHING MODULES FOR PULSED POWER
APPLICATIONS

Andreas Kluge*, Lutz Goehler+, Henry Gueldner*, Thomas Trompa, David Mory, Karl-Heinz Segsa'
*TU Dresden
Fakultaet Elektrotechnik und Informationstechnik, Elektrotechnisches Institut, Lehrstuhl Leistungselektronik, Dresden, Germany
Email: andreas.kluge@mailbox.tu-dresden.de
+HTW Dresden, Fakultaet Elektrotechnik, Professur Leistungselektronik Friedrich-List-Platz 1, 01069 Dresden, Germany
Lasertechnik Berlin GmbH, Am Studio 2c, 12489 Berlin, Germany
'Spree Hybrid & KOlmnunikationstechnik GmbH, Schkopauer Ring 24, 12681 Berlin, Germany

Abstract-This paper presents the design of IGBT-based magnitude lower than desired for pulsed power applications,
switching modules for pulsed power applications. Starting from especially for the nitrogen laser. Recently, there have been
theoretical and practical aspects for the selection of the IGBTs
some investigations into the high-speed switching behavior
the required parameters for the design of a single cell are derived.
Extended results of the characterization process for different
of IGBTs and MOSFETs ([1], [5], [6], [7]) which were
IGBTs are presented. They show that by using a special gate promising.
driving method for IGBT devices it is possible to realize the As was shown in [7], single IGBT-chips can reach the desired
required maximum values of peak current and current slope.
From the design of the single cell the conditions for a multiple cell
series connection for the target application follow. This includes

TI:..
the development of a high-speed gate drive based on a pulse

transformer. The designed cascade is used in a nitrogen gas laser

and switches a voltage of 12 kV and carries a peak current of
500 A at a maximum current slope of about 28 A ns -1.
single cell

I. INTRODUCTION
Fig. 1. Pulsed power sy stem with capacitive energy storage
A. Pulsed Power Systems

Pulsed power systems have the goal to deliver a certain

amount of energy to a load in a very short time. The applica
tions range from industrial, biological and military to medical
ones. Some typical applications are:
gas lasers e.g. excimer-, nitrogen lasers [1]
exhaust treatment, sax, NOx reduction [2]
food sterilization
radar systems [3]
lithotripsy systems
For these systems the current and voltage slopes in the load
are of great importance [4]. Therefore special pulsed power
switching devices like MCT (MOS Controlled Thyristor),
MTO (MOS Turn On) or DSRD (Drift Step Recovery Diode)
have been developed. They have limitations in reliability,
availability, life time and/or price because they are often
provided only by one manufacturer. For these reasons it is
desirable to replace these switches by widely commercially
available devices like MOSFETs or IGBTs which are not
specified for that kind of applications. Their switching speed in
typical power electronics applications is at about one order of
switching speed of some pulsed power applications when
using higher gate voltages than recommended in datasheets.
It has been found that above a gate voltage level of about
60V the switching dynamics are not improving anymore. The
switching losses reach a saturation level at this point.
Figure 1 shows the schematic of a pulsed power system
with capacitive energy storage. By turning on the switch,
the precharged energy storage Cs discharges into the load.
Due to different current and voltage demands, the switch is
realized by a series-, parallel- or series-parallel connection
of single devices with lower ratings. For the module design
it is necessary to define and to design a single cell which
depends both on the available devices and the required power
for the load. Starting from this minimum cell the module can
be designed.
The most critical parameter in power modulators is the high
required ratio between the average power and the peak power
of the switch which is caused by the short pulse lengths
and moderate repetition frequencies. This fact leads to the
high switching dynamics. A simple calculation according to

978-1-4799-2705-0/14/$31.00 2014 IEEE 2554


equation 1 results in the required switching power which must
be handled by the switch.
ELoad,req
Ps = (1)
tp
For example, the nitrogen gas laser requires an energy amount
of approximately 3 0 mJ delivered in a time of about 20ns
which results in a switching power above 1 MW.
B. Nitrogen gas laser
upper laser level
E/eV THI 40ns
10
5
1.0 1.4 1.8
Fig. 2. Energy level diagram of the N2 laser [8]
The main application for this research is the nitrogen gas
laser. Its optical output is realized by a gas filled laser tube
at low pressure. By switching of a capacitor, a transverse
electrical discharge (TE) is fired between two electrodes in
the tube and thus a laser process starts. The output is realized
by two mirrors, one at each end of the tube. The demand
for the high-dynamic switching results from the energy level
diagram of this laser which is shown in Figure 2. Due to the
electron collision caused by the TE, the upper laser level with
a lifetime of about 40ns is filled. The laser transition occurs
between the upper and the lower laser level, emitting a photon
at an ultraviolet wave length of 337.1 nm. The lower laser
level has a lifetime of about 1 0/Js. To reach the base level,
a pass through a metastable state with a lifetime of seconds
is necessary. These different lifetimes lead to the fact that
the nitrogen gas laser can only be driven in a pulsed mode.
Furthermore, the electron collisions have to be provided by the
discharge in a time which is in the order of the lifetime of the
upper laser level. The switch design is the greatest challenge
when developing such a laser. On the other hand, the nitrogen
gas laser has an extraordinary high laser gain. Thus, there is no
need for very complex mirror systems. To increase the peak
power and to decrease the beam divergence a simple high
reflective rear mirror is sufficient.
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The 2014 International Power Electronics Conference
c. CC- Topology
To provide the TE discharge to the tube, a topology called
CC-topology is used. It is already known from thyratron
systems and has been described in detail in [7]. Although there
are high speed switches like MCT or thyratron, their switching
speed is still too low for a nitrogen gas laser tube. The laser
tube requires a current slope of up to 400A ns -1 . Therefore,
the CC-topology sharpens the pulse provided by the switch
by a factor of 15 to 20 regarding current slope and factor 3
regarding peak current.
First, the storage capacitor G s is charged by a HV-charger.
During this time the peaking capacitor Gp is shorted by the
impedance ZSYM. The switch turns on and the laser tube
is ignited by an energy transfer between G s and Gp . This
transfer can be influenced by the switching speed. When the
laser tube ignites, the high speed transfer of energy to laser
tube is mainly provided by the peaking capacitance Gp . Thus,
the above mentioned gain of peak current and current slope
is observed. The switch is protected from that high current
slope due to the parasitic inductance La. A disadvantage of
the CC-topology is the greater amount of energy which has to
be charged into G s . This energy is only partially transferred
to the laser tube.
RCH Cs
HV-
Charger
iT
i)V' r'
ZSYM
laser-
tube
Fig. 3. CC- topology
II. DEV ICE SELECT ION ASPECTS FOR PULSED POWER
APPLICAT IONS
A. Theoretical aspects
Applications as described above require fast turn-on of
the main power device. Due to the moderate repetition rate,
switch-off delay and losses are of lower interest. When an
IGBT turns on, the current is determined by the n-channel
MOSFET part of the device initially. Its structure is shown in
Figure 4. It is clear, that the MOSFET should be turned on
as fast as possible and that it should feature a high saturation
current which is a function of the doping NA of the p+ -layer,
the gate-emitter voltage VCE and the aspect ratio WLMOS .
MOS
Since the transit time of an electron in the MOSFET channel
of a modern IGBT is far below one nanosecond, channel
formation itself is not decisive for MOSFET turn-on delay. The
switching delay is instead due to the effective gate-to-emitter
capacitance GIN and the effective gate resistance RC e ff, which
is a well-known fact. In the following, both are assumed to be
 The 2014 International Power Electronics Conference

E G
lel A

10
r"
- I I

f
8 -+

Fig. 4. MOSFET channel structure in a Trench IGBT

6 +

I
approximately constant. The delay can be partly compensated
by an elevated driver output voltage. If, for instance, the gate 4
is charged to a voltage VGE ON and the driver output voltage
is raised from VGl to VG2 the gate charge time is reduced by:
2

)
(2)
1-- Low NA of MOSFET region
where T RGeffCIN at the cost of a higher instantaneous o 1-- High NA of MOSFET region
current
VG2 o 0. 2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
IG(O) = (3)
RGeff tI/Js

The latter leads to higher power dissipation. In the above

discussion it is assumed, that the driver output voltage is con Fig. 5. Comparison of coUector current transients during switch-on of a
trolled so that gate oxide breakdown is avoided safely. Despite generic trench IGBT (ohmic load) with higher MOSFET saturation current
these possible improvements by the gate drive, which will be (low NA) and lower MOSFET saturation current (high NA). The gate drive
signals are equal in both cases.
discussed later in chapter III, the device of choice for a pulsed
power application should have minimum parasitic capacitances
and a high saturation current of the MOSFET part, as already
stated. Trench technology lowers RDS,ON (i.e. increases the
-
saturation current) at the cost of a higher gate capacitance, so
that a higher driver power compared to a planar gate device is
required. If possible, it is of advantage not to choose a wide I --
- High NA
Low NA
J
-\
-
trench pitch device. These devices are designed for a lower
short circuit saturation current (or lower MOSFET saturation
current). Short circuit ruggedness is no key demand here,
- r-
too. Figure 5 compares the switching transients of generic - ""
trench IGBTs with high and low MOSFET saturation current --
(low NA and high NA, respectively), as they result from a
2D device simulation with NGSpice [9]. The doping profiles
-
-- 1\ '\
- 1\\
of both structures are compared in Figure 6. To reduce the
simulation time, the compared devices have blocking voltages
of about 200 V, this way requiring a smaller calculation grid. --
When the MOSFET part conducts, it injects carriers into
the lightly doped and hence initially high-ohmic n-base. The
--
\\
increasing charge in the base lowers its resistance as time
17
proceeds, which is known as conductivity modulation. To
-
obtain a fast decrease of the n-base resistance the width of
that region should be small and the carrier lifetime (or the
-
resulting ambipolar lifetime) high. The latter demand results 1 2 3 4 5 6 7 8

-
from the simplified charge control equation:
x//Jm
.
ZMOSFE T IMOSFET =
Qn
Ta
+ -
dQn
dt
(4)
Fig. 6. Doping profiles of the MOSFET part [10] Cn-base width wn=100 !lill)
where Ta stands for the ambipolar lifetime and Qn denotes the

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TABLE I Switching with high stored energy, independent Ie ' Peak

INVESTIGATED CHIPS M
and df, Ie,Peak controlled by the gate, rectangular
current pulse [5]
Switching based on equivalent energies for a single cell
Type Ie,Peak
IGC142T120T6 1200V 4 5 0A 5n In
with maximum Ie,Peak and dJf, Ie,Peak limited by the
load and parasitics [7]
4 x IGC36T120T6 1200V 420A on In
MCT 1400V 4000A on In Both feature the gate drive strategy "Gate-Boosting" which
delivers the required gate charge faster to the gate of the IGBT
as shown in Figure 7. This method is realized by using an
stored charge. It can be seen, that if the MOSFET current is elevated gate terminal voltage of up to 80 V. According to

approximately constant and if no electron recombination oc equation 2, the gate charging time is then reduced by changing

curs at the p-emitter side (total recombination of the electrons the gate voltage level. Although the gates can withstand the

in the n-base), a given amount of charge is built up faster higher voltage, the exact timing of the gate pulse ensures

if the ambipolar lifetime assumes higher values. This is the that the gate oxide voltage of the IGBT does not exceed the

reason, why IGBT structures with field stop layer and high maximum permissible transient voltage of 30V.

carrier lifetime are favorable in practical applications. The usability of the both types of operation mentioned above

B. Practical aspects

A design for modulators with blocking voltages above v

10 kV requires a series connection of single devices. To limit
the effort for driving and symmetrization, only devices with
VCH +----
, tGl ' tG2
I IE )I I I( )0'
a blocking voltage of at least 1200V are investigated. In this : Gate-Boosting
voltage-class only IGBTs reach sufficient pulse currents for the -.oIl-"\
: classic gate drive
VC2+ +-__.2' .
target application. In comparison, there are just a few available
VC E ON +----+-----,JoH,.r
MOSFETs from IXYS with blocking voltages above 1000V.
Due to the unipolar conduction and the strong dependency
of RDs ,ON on the blocking voltage (power of 2.3) they are
specified for much smaller peak currents than IGBTs. Charge
compensated devices could be an alternative but they are t
only available for blocking voltages below 1000V. Infineon tG

IGBTs of the 1200V - and 1700V -class reach the highest peak
pulse powers among IGBTs, they are specified for peak pulse
currents of up to 6 00A. Furthermore, they are available as
single chip devices which is advantageous for a low inductive Fig. 7. Principle of Gate Boosting
assembly.
One possibility is to design a single cell for a blocking voltage
depends on the load capacitance and the required energy
of 1200V and a peak current of 4 5 0A by a single switch. An
transfer. For the nitrogen gas laser the second type is used
interesting alternative is a parallel connection of IGBTs with
because the stored energy of the application is known. A
smaller current rating. These devices do not contain an internal
typical characterization circuit for a single cell is shown in
gate resistor. Hence, it should be easier to reach high-dynamic
Figure 8. It has its origin in a CC-topology to drive the
switching in comparison to the single-chip cell and the effort
nitrogen gas laser but can be used in the same manner for
for the gate drive is reduced.
any application which requires an energy transfer from a
Infineon offers 1200V-IGBTs with a peak current of 105 A
storage capacitor to a load. The goal of characterization is
without gate resistor. A parallel connection of four such
to reach similar voltage and current slopes for a single cell
devices could carry nearly the same current as a single chip
as they would occur in the series-parallel connection for the
with a gate resistor. Table I shows the investigated IGBT
real application. To reach equivalent switching transients for a
chips. For a comparison the state of the art MCT-switch is
single device, the storage capacitor should contain an energy
investigated, too.
amount which scales down from the real application according
III. SINGLE CELL CH ARACTERIZATION AND G ATE DRIVE to equation 5.
STRATEGY EeSApp
EeSSingle = (5)
mp ns
Due to the fact that commercial datasheets do not contain
data for pulsed operation, especially the achievable switching There, ns is the number of cells in series and mp is the number
dynamics, measurements for characterization is necessary. of cells in parallel. This approach assumes equal voltage and
Two recently published types of operation are possible to current sharing of all cells which has to be ensured by the
characterize a single cell for pulsed power applications: design and gate drive of the resulting switch. The strategy

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 The 2014 International Power Electronics Conference

leads to comparable voltage and current values and slopes Is l A

during characterization.
The 1200V IGBT devices shown in table I have been mea
sured according to the characterization strategy in [7] with the 400 1--+- -'1 -\----11---+--+--+--+--+--1---1
parameters:
Ecs 13.4mJ
=

Vcs(O) 1000V (12

= stage design)
Cs =26.4nF
Cp 7.7nF
=

ns 12, mp
= 1 =

For the MCT switch, which has a higher blocking voltage, o I--=t-
-\H---Y
the energies have been adapted according to equation 5 for
ns = 10. The measurement results for the different devices
from table I are shown in Figure 9. As can be seen, the
-200 - -+---+\ --+--+--1
parallel connection of the IGBTs reach a slightly higher peak
current and higher dynamics than the single 1200V IGBT at
smaller gate voltages. A maximum di/dt of about 23A ns -1 Single-MCT VG 15 Y

-t
-- =

can be observed for the parallel connection. Furthermore, the 4xIGC36Tl20T6L VG 50Y,tG 30ns
-400
-- = = _

turn-on delay is reduced for these chips due to the smaller -- IGCl42Tl20 VG = 80Y,tG = 50ns
gate resistor. Both devices could switch a higher peak current.
Taking the damping effect of the current viewing resistor RM,s -20 0 20 40 60 80 100 120 140 160 180
into account, in the target application the maximum switching tins
performance of the IGBTs should be reached. Furthermore, the
MCT shows even a slightly better behavior than the parallel
Fig. 9. Comparison of switching currents for different IGBTs
connection of four 1200V IGBTs.
The main result from the single cell characterization is
that in the special application IGBTs, especially the parallel
connection of 1200V IGBTs can reach a switching power degrees of freedom exist and can be adapted during the design:
comparable to the MCT when using the special gate drive The switching dynamics controlled by VGE and the amount of
strategy without increasing the stored energy compared to the energy Ecs which is transferred during the switching process.
the MCT-switch. A more general way for characterization Assuming that the IGBT switches at maximum speed (e.g.
maximum VG) three different cases exist for the relationship
VCS between initial energy Ecs o and peak current:
--
Cs
The peak current will be exceeded, decrease of VGE or
Ecso necessary to stay within peak current limit.
The peak current will be reached: Design optimum
between switching speed and maximum switching power.
The peak current will not be reached, further increase of
Ecso possible.
RSYM,s

Starting from such a characterization of a single cell, the

Fig. 8. Characterization circuit
of the maximum pulsed power could be the following. It is
assumed that a single cell consists of a single IGBT (or a
MOSFET), a parasitic inductance, a damping resistor and a
capacitance charged at a certain voltage level. Furthermore,
the switch has a finite switching dynamics and a defined
peak current. This peak current can be the datasheet value
or a modified value depending on planned lifetime. Then, two
desired voltage and current level for the application can be
provided by series, parallel, or series-parallel connection. To
reduce the number of cells it is the goal to reach the second
case.
In practice, the peak current in the single cell characterization
should be about 10% to 20% below the maximum vaule in the
real application. This considers non scaling conditions for the
parasitic inductance and the current viewing resistor. Figure
9 shows, that the IGBTs, especially the IGC36Tl20T6L,
reach nearly the above mentioned design optimum between
the switching speed and the maximum switching power.
Therefore, the criteria for maximum switching power is the
peak current value from the datasheet.

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IV. DESIGN OF T HE HV-C ASC ADE
This chapter presents the design of a 12-stage series
connection of IGC36T120-based cells, the realized cascade
consists of 11 stages. Each cell has four single IGBTs in
parallel which share the gate drive and the symmetrization
network. The switch design is shown in Figure lO, a picture
of the cascade is shown in Figure 11.
RSYM,s
RSYM,s
Fig. 10. Structure of HV- cascade
Fig. 11. HV- cascade based on IGC36Tl20-IGBTs
A. Galvanically isolated gate drive
To control the IGBTs a galvanically isolated Gate-Drive
is necessary which takes the special gate drive strategy into
account. Due to the fact that gate voltage pulses of about 50V
to 80V with pulse lengths of about 50ns are required, the rise
time should be below 20ns . Although a lower gate resistor is
advantageous for higher switching dynamics, a minimum gate
resistor must be used to avoid voltage oscillations in the gate
circuit [11] . These oscillations might lead to a different turn
on behavior of the single stages and therefore asynchronous
voltage sharing. The solution of the second order differential
equation in the gate circuit with the parasitic inductance
L(J,G L and the input capacitance GIN leads to the minimum
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The 2014 International Power Electronics Conference
RG,MIN
V N
gate resistor to reach the critical damped condition:
L
RG,MIN 2
L (6)
=
For typical values of L(J,G L and GIN for a 1200V/450A
IGBT (or four parallel connected 1200V/105A-IGBTs) a
minimum gate resistor of 1n to 2n should be used. Gate
boosting is necessary to obtain the maximum dynamics of the
device without voltage oscillations. Different methods for the
realization of the gate drive are possible, three basic concepts
are:
Single pulse transformer, switching energy supply at the
primary side
Divided pulse transformer, switching energy supply at the
primary side
Single pulse transformer, switching energy supply at the
secondary side
For the nitrogen laser the first option seems to be the best
solution. Due to the required compactness and the relatively
low number of cells, the turn on energy can be transformed
by a single transformer. Furthermore, the synchronization of
a single transformer should be better than that of a distributed
system and the number of devices required is reduced. For
the pulse transformer of the nitrogen laser a toroidal core
of nanocrystaline material is used. The turns ratio of the
transformer is 4: 1. A fast primary circuit switches a voltage
of about 800V at the primary winding with a rise time of
5ns . The design process of the pulse transformer was assisted
by a 3D-FEM transient simulation. For example, Figure 12
shows the flux density in the core 28ns after applying the
voltage to the primary side. The resulting transformer realizes
an output slope of up to 6Vns -1 with a gate equivalent
5n load resistor and up to 4Vns -1 in a real cascade. The
transformer output voltages with a 5n resistive load on all
output windings is shown in Figure 13. The voltages have been
measured simultaneously with four coupled and synchronized
oscilloscopes. As can be seen, the rise time from 0V to
80V is about 15ns . The difference between the windings at
80V level is less than 3ns . Thus, the requirements regarding
dynamics and synchronization of the gate drive for a cascade
are fulfilled.
B. Measurement results
Figure 14 shows the measurement result of a IGBT-based
cascade with a blocking voltage of about 12kV. In this mode
the laser produces an output energy which is about 20 %
above a comparable MCT-based system. The first peak in the
switch current Is determines the quality of the laser output.
As planned, it reaches approximately the maximum peak pulse
current of the four parallel devices. In comparison to the
single cell characterization in chapter III it is increased by
about 20 %. This is caused by the reduced damping of the
circuit (CVR not scaled) and due to the fact that for the
measurement only a II-stage cascade has been used. Thus,
the switching energy of a single cell in the cascade is slightly
 The 2014 International Power Electronics Conference

:1 f

w A
o

151------1---
1 -+---- 600
Vs
-
Is
- h/3 - 500

I I
10
I I
10 -- 400

- 300

51---f--tt H--- -\t---1--+---- 200

- 100
lO(mm)

Fig. 12. Flux density of the pulse transformer at t = 28 ns

- -100

VjV
-5 -- -200
120
o 50 100 150 200

100 tins

80 Fig. 14. Switching waveforms of the JGC36Tl20-based switch and

Vcs (0)=11.5kV,ISPeak550A, 'fl max
30Ans-l

60

40 to the single device characterization, it is assumed that the

MCT-based switch is less synchronous than the IGBT-based
one.
20

0
V. CONCLUSION

-20
Main result of our investigations is that it is possible to
use IGBTs in compact pulsed power systems like the nitrogen
-40
20 40 60 80 100 120 gas laser which is not a standard up to now. In the target
tins application it has been proved that the IGBT-based systems can
reach and beat the performance of the MCT-based switches. A
second important achievement is the expansion and the gener
Fig. 13. Transforming a 50ns pulse to 5 rl resistive load on each output
winding alization of the results for a single device reported in former
publications. Thus, a modular design process for other pulsed
power applications is possible. The relevant design steps for
increased in comparison to the single cell characterization. the HV-cascade have been presented. Measurements show that
Figure 15 compares the different switch currents for the IGBT the results from the equivalent energy approach can be verified
cascade and the MCT cascade switching a voltage of 11kV. in the cascaded switch. Further investigations have to be done
Before igniting the laser tube, the cascade based on the parallel in the IGCl42Tl20-based cascade. Additionally, the usability
connection reaches a higher current peak than the MCT. of 1700V-IGBTs in the cascades have to be investigated. They
Hence, the energy transferred into the peaking capacitance behave less dynamic in single device characterization than
is increased which leads to the higher laser output energy. the 1200V which will lead to a lower output energy of the
Furthermore, the ratio between the first and the second current laser. The advantage would be the reduced effort due to the
peak is smaller than in the other variants. This is desired due less number of required stages. Hence, a comparison of the
to a better energy balance of the system. Owing to the fact that different cascades is possible and the best option for the target
the MCT switch current is decreased by about 20 % compared application can be chosen.

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 The 2014 International Power Electronics Conference

Is l A

500 - -+-- ---+-- + --+--1

400 -+--

300 -+--

200 - t -+-- \--+-- + --+--1

100 -+-- f--+- --+-

-100 MCT
-- IGC36Tl20T6L

-200 L--L---L--L-L--
-20 0 20 40 60 80 100 120 140 160 180

tins

Fig. 15. Comparison of switching currents of IGC36Tl20 and MCT cascades

at 11kV

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