Device Physics (EE- 2210)

Lecture 4
Dr. Shiv Govind Singh
Associate Professor
IIT Hyderabad
Electrical Engineering

Y-2017/18
 Course information
Out Line
PN Junction: Space Charge region, Poisson Equations,
Static analysis, Energy Band Diagrams, Biasing,
Small signal analysis, Breakdown mechanism.
Bipolar Junction transistor: Injection Efficiency, Current
base current gain, Common emitter current gain, AC
analysis, Impact Ionization, Punch through. Transit time,
Charge control description.
Theory of Field Effect Transistors: Static characteristics
of JFETs, heterojunction bipolar transistors, MOS
Capacitor analysis, C-V measurements, Drain Current,
Small signal analysis
 Reference
Text Book:
1. Physics of Semiconductor Devices, S. M. Sze, John Wiley & Sons (1981).
2. Solid State Electronics by Ben G. Streetman and Sanjay Banerjee,
Prentice Hall International , Inc.
3. Semiconductor Physics and Devices, Donald A. Neamen, Tata Mcgraw-
Hill Publishing company Limited.
4. Advanced Semiconductor Fundamentals by Pirret
Reference Book:

1. Introduction to Solid State Electronics, E. F. Y. Waug,

North Holland, 1980.
Recap
3D E-K diagram
 3-D E-k Diagram

Ge Si GaAs GaAs
 Density of states in band (1-D)
N total no of
a
atoms

L
States between E1+DE and E1=2X(Dk/dk)
E

K1+DK
=2XDk/(2p/Na)

E1+DE
E1
k1
States per unit Energy=(N.a. Dk)/(p.DE)

K
 Cont.
L

States per unit Energy=(N.a. Dk)/(p.DE)

E
With free electron approximation

K1+DK

E1+D
E1
k1

States per unit Energy @E

1
States per unit Energy per unit length @E
Graphical Representation of DOS

DOS

k1

DOS
Density of States in 2D
Semiconductors
b

HA
Interesting result :
DOS will be independent of Energy
 DOS in 3-D semiconductor
In Equilibrium:
In Equilibrium:

No of
No of states
states in
in energy
energy dE
interval dE-
interval dE-
E=0 Ecc
E
E=0 Evv
dnoo = ff ((E
dn E))gg((EE))dE
dE E

Etop

no f ( E ) g ( E )dE
0

near the bottom

Since near bottom of the band, the E-k
diagram are parabolic and we can assume
diagram
that the electrons are moving nearly freely
with mass m*n
 DensityofStatesin3DSemiconductors
Volume of single states in K-space is (2/L)3
DensityofStatesin3DSemiconductors
States between E1 +E & E1
MacroscopicSample
kz
4 4 MacroscopicSample
( k +Edk )
3
Volume ofspherical
States between + E
cell
& E
of k 3
radius k
3
and thickness
1
k+dk 3 1 V 2 H
4 = 4 =4k dk 2 = k k
( k + dk )2 2 k23 V 2
3 2

3 3W H = H 2/L W
= L k 2
k
2 2 2
States between E1+DE and
2E1
2
L
2/L
W
L W H ky
V
=4k2dk / (2/L)3 2 k L 2/L
States/unit energ y @2 E = 2 k
=Vk dk / 2 V 22
k dE
2
States/unit energy @ E = 2 k 2/H
States /energy 2 2
=(Vk2dk /dE)/2 dE 2/H 2
kx
k2 2
2m ( E E0 )
*
dk m* 2/W
2/L
E E02 k=2 2km= ( E E ) 2 dk
* =*
E E0 =
*
2mk = 0
= dE
m 2 2
( E E2/L
0)
2m* 2
dE 2 2
( E E0 )
k
States/unit energy/unit volume @ E1 K+dk
States/unit energy/unit volume @ E1
m*
2 m3 ( E E( )
E E0 )
*
DOS m= 2 m *
DOS = 2 2 2 *

2 3
0
 V 2 k
States/unit energy @ E = k
2 2 dE
Graphical representation 2
k2 2m* ( E E0 ) d
E E0 = k=
2m* 2
dE

States/unit energy/unit volume @ E1

m*
DOS = 2m* ( E E0 )
2 2 3

E AlamEC

k1

DOS
Now, consider the case of Si, Ge and GaAs
 Effectivemass
Effective massininValance
ValanceBand
Band
mn*3 / 2
gc (E) 2 3
2( E Ec )

*3 / 2
mhh
gv (E) 2 3
2( Ev E)

mlh*3 / 2
gv (E) 2 3
2( Ev E)
 Effective mass
Effective in in
mass ellipsoidal band
ellipsoidal band
K2 K2

! 2 k122 k12 ! 2 k 222 k 22 ! 2 k322 k32

E -EEc =
- Ec +* +*
2m2l ml 2m2t mt 2m2t*mt*
* * K1 K1
K3 K3

k12 k12 k 22 k 22 k32 k32

1=1 + +
( E (-EEc 2m)l2ml ( E (-EEc
-)Ec
* *
-)Ec2m)t2mt* ( E (-EEc
*
-)Ec
2m *
)t2mt*
!2 2 !2 2 !2 2

a2 a2 b2 b2 K2 K2

4 4 3
N el pab 2 pkeff
2

3 3 K1 K1
K3 K3

mm = NN (m
* *
(m
eff effmm) ) 2 / 32 / 3
el el
* * *2 *2
l l t t
1/ 31/ 3
 Density of states for case of Ge/Si in conduction band
E = Ec + Ak12 + B (k 22 + k32 ) mn*3 / 2 2( EE =EcE)c + A(k1 + k 2 + k3 )
2 2 2

gc ( E) = 3 -2
!

*
meff = 42 / 3 (ml*m *2 1/ 3
t )
AlamECE606S09
for..Ge 12

*
meff = 62 / 3 (ml*mt*2 )1/ 3 for..Si
 Density
Density of electron/holes
of electron/holes in energy
in energy interval
interval dE- dE-
Etop

no f ( E ) g ( E )dE
0

cancan
f(E)f(E) obey obeyMBMB distribution
distribution if electron
if electron behave
behave
as as classical
classical particle.
particle.
i.e.i.e.
~Ae -E/kT-E/kT
~Ae

ButBut Electron
Electron dont
dont obey
obey MBMB distribution
distribution as itasisitquantum
is quantum
particle
particle andand fermions',
fermions', hence
hence it obey
it obey Fermi
Fermi DiracDirac distributions.
distributions.
Classical
Classical MBMB
Fermions
Fermions FDFD
Boson QM QM particle
Boson BEBE particle
 Rule for filling the electron

Pauli Principle: Only one electron per state

Total number of electrons is conserved

Total energy of the system is conserved

 Electron distribution function
When T>0
At thermal equilibrium, the electrons do not simply fill the
lowest energy states first.
Fermi-Dirac statistics which gives the distribution of probability of
an electron to have an energy E at temperature T

EF is the Fermi energy and kb is the Boltzmann constant.

Fermi-Dirac statistics involves a chemical potential instead of the Fermi energy

EF. This chemical potential depends on the temperature and any applied electrical
potential. But in most cases of semiconductors, the difference between and EF is
very small at the temperatures usually considered.
 Fermi Level
Assumption: solid where there are m
energy levels and n electrons, and (m >
n)

At equilibrium, when no electron is in an

excited state (e.g. at the absolute zero
temperature, 0 K), the lowest n energy
levels will be occupied by electrons and
the next remaining m-n energy levels
remain empty.

If the highest occupied state is inside a

band, the energy of this state is called
the Fermi level and is denoted by EF.
 More
More Insight
MoreInsight
Insight
(1)At
(1)At TT ==
(1)At T00
=KK and
0 and
K E<E
and E<E
E<E FF F

(a)Fermi-Dirac
(a)Fermi-Dirac distribution
distribution
(a)Fermi-Dirac isisunity
distribution unity
is unity
AtAt
At TT==
T00
=KK and
0 and
K E>E
and E>E
E>E FF F

b)Fermi-Dirac
b)Fermi-Dirac distribution
distribution
(b)Fermi-Dirac [f[fee(E]
distribution (E]
[f isisZero
e(E]
Zero
is Zero

(2)At
(2)At TT>>
(2)At T00
>KK
0K

(a)(a)
(a) E=E
E=EE=E fee(E]=1/2
FF, ,fF
(E]=1/2
, fe(E]=1/2

(b)(b)
(b) E>E
E>E +3KT,
FF+3KT,
E>E F+3KT,
exp[(EE E-EFF))//kT
exp[( kT]] 11 ffee((EE)) exp
exp [([(EE EE-FF))//kT
kT]]
Most
Most states
states
Most with
with
states energy
energy
with above
above
energy 3KT
3KT
above from
from
3KT EEFFEwill
from will bebe
be
F will
empty.
empty.
empty.

(C)(C)
(C) E<E
E<E -3KT,
FF-3KT,
E<E F-3KT, exp[(EE EEFF))//kT
exp[( kT]] 11 ffee((EE)) 11 exp(
exp(EE EE-FF))//kT
kT]]
Most
Most states
states
Most with
with
states energy
energy
with below
below
energy 3KT
3KT
below from
from
3KT EEFFEwill
from will bebe
be
F will
filled.
filled.
filled.
(d)(d)
(d) E>>3KT,
E>>3KT, beyond
beyond
E>>3KT, EEf fthen
beyond Ethen MB
MB
f then
and
and
MB FDFD
FD
and merged
merged asas
as
merged inthe
in thethe
in case
case of Si
of
case SiSi
of
Equilibrium Distribution of Electrons and Holes

E E
gc(E). ff(E)
gc(E)
gc(E)

Ec Area n0 = electrons Ec
ff(E) concentration

EF
Area p0 = holes
concentration
EV
EV
E
gv(E)
gv(E)
gc(E). (1-ff(E))

ff(E)=0 ff(E)=1
Now again Etop

no f ( E ) g ( E )dE
Ec

mn*3 / 2
Etop
3
( E Ec dE
no May not be integrable
Ec
1 exp( E EF ) / kT

Apply MB distribution as Eg/2~16KT

mn*3 / 2
3
( E Ec dE (
Ec E f
)
kT
no Nce
E
exp( E EF ) / kT
*
m kT 3/ 2 19
Nc 2( n
2
) 10 Effective density of states in CB
 Fillednonoofofstates
Filled statesgives
givesthe
thenonoelectrons
electrons

For heavily doped the semiconductor MB distribution does not hold so,
For heavily doped the semiconductor MB distribution does not hold so,
need to solve Fermi integral for solution.
need to solve Fermi integral for solution.

e.g let us take n=1020

e.g let us take n=1020

We get E >Ec which is not possible

We get EF>EFc which is not possible

2Nc ( E EC
So
So
n0 F1/ 2
kT
 Holes
Holes in semiconductor
in semiconductor
Ev
po {(1 f ( E )}g v ( E )dE
Ebott
*3 / 2
m p
3
( Ev E dE ( E F Ev )
kT
po Nve
E
exp( E EF ) / kT
*
m kT 3/ 2
Nv 2( v
2
)
* *
Since m n m p

Nc Nc
 Fermi
Fermi level
level in
in intrinsic
intrinsic
semiconductor
semiconductor at at equilibrium
equilibrium
mn*d o s m*pd o s
Nc Nc
But at Equilibrium n0=p0
( Ec E F ) ( E F Ev )
kT
Nc Nv kT

EC EV m*pd o s
EF kT ln
2 mn*d o s
if , m*pd o s mn*d o s

EF will be in middle of band gap

 Intrinsic carrier concentration
Product of n0 and p0 Nc Nv
(/cm3) (/cm3)
- ( EF - Ev ) (1018) (1018)
m*n m *p
po = N v e kT mo mo
- ( Ec- EF ) Si 28 10.4 1.08 .56
no = N c e kT Ge 10.9 6 .55 .37
- ( E F - E v ) - ( Ec- E F ) GaAs .47 7 .067 .48
no po = N v e kT N c e kT
- ( Ec - Ev ) - Eg Eg Concentrat Concentrati
no po = N v N c e kT = N v N c e kT (eV) ion (/cm3) on (/cm3)
300K 400K
- E g

ni = N v N c e
2 kT
= no po Si 1.12 1.51010 ~1013
Ge .72 2.4X1013 ~1016
Where Eg is band gap,
GaAs 1.42 1.8X106 -
At equilibrium no=po=ni
ni depends upon temperature and band gap SiC 3.5 10 100
Some more concepts
PositionResolvedEkDiagram
Position Resolved E-k Diagram

Ec Ec Ec
E E E

AlamECE606S09 4
 EkDiagramvs.Banddiagram
E-k diagram in external field

V=0 V=V1

Eref
E = Ec Eref = qV ( x )
P.E.
P
 How to get Potential, Field and
Potential,FieldandCharge
Potential,FieldandCharge
Charge from E-K diagram
P.E. = Ec Eref
P.E. = Ec Eref
Ereff
Ereff
qV = Ec Eref
qV = Ec Eref
dV 1 dE
E = dV = 1 dE c
E = dx
d = q dx dc
d
dx q dx d
dE d 2V
= dE = d 2V2
= dx = dx2
dx dx 6
AlamECE606S09
6
 Effective
Effective Density
DensityofStates of States

2
F1 2 (c ) N C e ( Ec EF ) > 3
( Ec EF )
n = NC if

NC
gc ( E ) f ( E )
EF EF
g ( E ) 1 f ( E ) NV

As if all states are at a single level EC

AlamECE606S09 9
 E-K vs Band diagram
EkDiagramvs.Banddiagram

V=0
V 0 V=V1

EC
EV

AlamECE606S09 10
 Potential, Field
Potential,FieldandCharge
and Charge

P E = Ec Eref
P.E.
Eref

qV = Ec Eref

dV 1 dEc
E= =
dx q dx

dE d 2V
= = 2
dx dx
AlamECE606S09 11