DATA SHEET

MOS FIELD EFFECT TRANSISTORS

2SK2367/2SK2368
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE

DESCRIPTION
The 2SK2367/2SK2368 is N-Channel MOS Field Effect Transistor PACKAGE DIMENSIONS
designed for high voltage switching applications. (in millimeter)
4.7 MAX.
15.7 MAX. 3.20.2

1.0
FEATURES 1.5

Low On-Resistance 4

7.0
20.00.2
2SK2367: RDS (on) = 0.5 (VGS = 10 V, ID = 8.0 A)

4.50.2
6.0
2SK2368: RDS (on) = 0.6 (VGS = 10 V, ID = 8.0 A)
1 2 3
Low Ciss Ciss = 1 600 pF TYP.

19 MIN.
High Avalanche Capability Ratings

3.00.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
2.20.2 1.00.2 0.60.1 2.80.1
Drain to Source Voltage (2SK2367/2SK2368) VDSS 450/500 V
5.45 5.45
Gate to Source Voltage VGSS 30 V 1. Gate
2. Drain
Drain Current (DC) ID (DC) 15 A 3. Source
Drain Current (pulse)* ID (pulse) 60 A 4. Fin (Drain)
Total Power Dissipation (Tc = 25 C) PT1 120 W
MP-88
Total Power Dissipation (TA = 25 C) PT2 3.0 W
Channel Temperature Tch 150 C Drain

Storage Temperature Tstg 55 to +150 C

Single Avalanche Current** IAS 15 A Body
Single Avalanche Energy** EAS 161 mJ Diode
Gate
* PW 10 s, Duty Cycle 1 %
** Starting Tch = 25 C, RG = 25 , VGS = 20 V 0

Source

Document No. TC-2506

(O. D. No. TC-8065)
Date Published December 1994 P
Printed in Japan
1995
1994
 2SK2367/2SK2368

ELECTRICAL CHARACTERISTICS (TA = 25 C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS

Drain to Source On-Resistance RDS (on) 0.4 0.5 VGS = 10 V 2SK2367

0.5 0.6 ID = 8.0 A 2SK2368

Gate to Source Cutoff Voltage VGS (off) 2.5 3.5 V VDS = 10 V, ID = 1 mA
Forward Transfer Admittance | yfs | 5.0 S VDS = 10 V, ID = 8.0 A

Drain Leakage Current IDSS 100 A VDS = VDSS, VGS = 0

Gate to Source Leakage Current IGSS 100 nA VGS = 30 V, VDS = 0
Input Capacitance Ciss 1 600 pF VDS = 10 V

Output Capacitance Coss 300 pF VGS = 0

Reverse Transfer Capacitance Crss 30 pF f = 1 MHz
Turn-On Delay Time td (on) 30 ns ID = 8.0 A

Rise Time tr 40 ns VGS = 10 V

Turn-Off Delay Time td (off) 70 ns VDD = 150 V
Fall Time tf 25 ns RG = 10 RL = 18.8

Total Gate Charge QG 43 nC ID = 15 A

Gate to Source Charge QGS 10 nC VDD = 400 V
Gate to Drain Charge QGD 20 nC VGS = 10 V

Body Diode Forward Voltage VF (S-D) 1.0 V IF = 15 A, VGS = 0

Reverse Recovery Time trr 400 ns IF = 15 A, VGS = 0
Reverse Recovery Charge Qrr 1.8 C di/dt = 50 A/s

Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time

D.U.T. D.U.T.
RG = 25 L RL VGS
VGS 90 %
VGS (on)
RG Wave Form 10 %
0
PG. 50 PG. RG = 10
VDD VDD
VGS = 20 - 0 V ID 90 %
90 %
VGS ID
BVDSS I 10 % 10 %
0 D 0
Wave Form
IAS
ID VDS t td (on) tr td (off) tf
VDD
ton toff
t = 1 us
Duty Cycle 1 %
Starting Tch

Test Circuit 3 Gate Charge

D.U.T.
IG = 2 mA RL

PG. 50 VDD

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

2
 2SK2367/2SK2368

TYPICAL CHARACTERISTICS (TA = 25 C)

DERATING FACTOR OF FORWARD BIAS TOTAL POWER DISSIPATION vs.

SAFE OPERATING AREA CASE TEMPERATURE
100 120
dT - Percentage of Rated Power - %

PT - Total Power Dissipation - W

80 100

80
60
60
40
40

20
20

0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

TC - Case Temperature - C TC - Case Temperature - C

DRAIN CURRENT vs.

FORWARD BIAS SAFE OPERATING AREA
DRAIN TO SOURCE VOLTAGE
100 24
ID (pulse) PW Pulsed
d
ite =
L im 0 V) 10 20
10
=1
)
on 0 VGS = 20 V
S( s

ID - Drain Current - A

RD VGS 1 s ID - Drain Current - A 10 V

(a t m
10 ID (DC) s 16
8V
Po 10 6V
w m
er s 12
Di
ss
ipa
tio 2SK2368 8
1.0 n
Lim
ite 2SK2367
d 4
TC = 25 C
Single Pulse
0.1
1 10 100 1 000 0 4 8 12 16
VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V

DRAIN CURRENT vs.

GATE TO SOURCE VOLTAGE
100
Pulsed

10
ID - Drain Current - A

TA = 25 C
25 C
1 75 C
125 C

0.1

0 5 10 15
VGS - Gate to Source Voltage - V

3
 2SK2367/2SK2368

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1 000

rth (ch-c) (t) - Transient Thermal Resistance - C/W 100 Rth (ch-a) = 41.7 C/W

10

Rth (ch-c) = 1.04 C/W

1

0.1

0.01
TC = 25 C
Single Pulse
0.001
10 u 100 u 1m 10 m 100 m 1 10 100 1 000
PW - Pulse Width - s

FORWARD TRANSFER ADMITTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs.

RDS (on) - Drain to Source On-State Resistance -

DRAIN CURRENT GATE TO SOURCE VOLTAGE
100 1.5
| yfs | - Forward Transfer Admittance - S

VDS = 10 V Pulsed
Pulsed
TA = 25 C
25 C
10 75 C 1.0
125 C
ID = 10 A
5A
2.5 A
1.0 0.5

0.1 1.0 10 100 0 10 20 30

ID - Drain Current - A VGS - Gate to Source Voltage - V

DRAIN TO SOURCE ON-STATE GATE TO SOURCE CUTOFF VOLTAGE

RDS (on) - Drain to Source On-State Resistance -

RESISTANCE vs. DRAIN CURRENT vs. CHANNEL TEMPERATURE

2.0
VGS (off) - Gate to Source Cutoff Voltage - V

Pulsed
4.0

3.0

1.0
2.0

1.0

0 0
1.0 10 100 50 0 50 100 150
ID - Drain Current - A Tch - Channel Temperature - C

4
 2SK2367/2SK2368

DRAIN TO SOURCE ON-STATE RESISTANCE vs. SOURCE TO DRAIN DIODE

RDS (on) - Drain to Source On-State Resistance

CHANNEL TEMPERATURE FORWARD VOLTAGE
1.5
Pulsed
100

ISD - Diode Forward Current - A

1.0
10

VGS = 0
ID = 10 A
5A 1.0
0.5
VGS = 10 V
0.1
VGS = 10 V
0
50 0 50 100 150 0 0.5 1.0 1.5
Tch - Channel Temperature - C VSD - Source to Drain Voltage - V

CAPACITANCE vs. DRAIN TO

SOURCE VOLTAGE SWITCHING CHARACTERISTICS
10 000 1 000
VGS = 0
tr

td (on), tr, td (off), tf - Switching Time - ns

f = 1 MHz
Ciss, Coss, Crss - Capacitance - pF

Ciss tf
1 000 100
td(on)
td(off)

100 Coss 10

VDS = 150 V
Crss VGS = 10 V
RG = 10
10 1.0
1 10 100 1 000 0.1 1.0 10 100
VDS - Drain to Source Voltage - V ID - Drain Current - A

REVERSE RECOVERY TIME vs.

DRAIN CURRENT DYNAMIC INPUT/OUTPUT CHARACTERISTICS
400 16
di/dt = 50 A/s
VGS = 0 ID = 10 A
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns

14 VGS - Gate to Source Voltage - V

VDD = 400 V
300 250 V 12
125 V
1 000 VGS
10

200 8

100 4
100 VDS 2

0.1 1.0 10 100 0 10 20 30 40

ID - Drain Current - A Qg - Gate Charge - nC

5
 2SK2367/2SK2368

SINGLE AVALANCHE ENERGY vs. SINGLE AVALANCHE CURRENT vs.

STARTING CHANNEL TEMPERATURE INDUCTIVE LOAD
200
ID (peak) = IAS RG = 25
RG = 25
EAS - Single Avalanche Energy - mJ

VDD = 150 V

IAS - Single Avalanche Current - A

VGS = 20 V 0 V VGS = 20 V 0
161 mJ VDD = 150 V Starting Tch = 25 C
150 IAS = 15 A

10
EA
S
=1
100 61
mJ

50
1.0

25 50 75 100 125 150 175 100 u 1.0 m 10 m 100 m

Starting Tch-Starting Channel Temperature - C L - Inductive load - H

6
 2SK2367/2SK2368

REFERENCE

Document Name Document No.

NEC semiconductor device reliability/quality control system. TEI-1202

Quality grade on NEC semiconductor devices. IEI-1209

Semiconductor device mounting technology manual. IEI-1207
Semiconductor device package manual. IEI-1213

Guide to quality assurance for semiconductor devices. MEI-1202

Semiconductor selection guide. MF-1134
Power MOS FET features and application switching power supply. TEA-1034

Application circuits using Power MOS FET. TEA-1035

Safe operating area of Power MOS FET. TEA-1037

The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.

7
 2SK2367/2SK2368

[MEMO]

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
Standard, Special, and Specific. The Specific quality grade applies only to devices developed based on
a customer designated quality assurance program for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in Standard unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.

M4 94.11