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SBW13009-KK
High Voltage Fast-Switching NPN Power Transistor
Features
Very High Switching Speed
High Voltage Capability
Wide Reverse Bias SOA
General Description
This Device is designed for high voltage,High speed
switching characteristics required such as lighting
system,switching mode power supply.
IC Collector Current 12 A
Thermal Characteristics
Symbol Parameter Value Units
RJC Thermal Resistance Junction to Case 1.04 /W
Rev.A Jun.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
SBW13009-
SBW13009-KK
Electrical Characteristics(Tc=25 unless otherwise noted)
Value
Symbol Parameter Test Conditions Units
Min Typ Max
VCEO(sus) Collector -Emitter Breakdown Voltage Ic=10mA,Ib=0 400 - - V
Ic=5.0A,Ib=1.0A 1.0
Ic=8.0A,Ib=1.6A - - 2.0 V
VCE(sat) Collector -Emitter Saturation Voltage Ic=12A,Ib=3.0A 3.0
Ic=8.0A,Ib=1.6A
- - 2.0 V
Tc=100
Ic=5.0A,Ib=1.0A 1.2
- - V
Ic=8.0A,Ib=1.6A 1.6
VBE(sat) Base-Emitter Saturation Voltage
Ic=8.0A,Ib=1.6A
- - 1.5 V
Tc=100
IEBO Emitter-Base Cutoff Current Veb=9V,Ic=0V - - 10 uA
Vce=5V,Ic=5.0A 8 - 40
hFE DC Current Gain
Vce=5V,Ic=8.0A 5 - 30
ts Storage Time VCC=5.0V,Ic=0.5A 4 - 10
s
tf Fall Time (UI9600) - 0.8
Note :
Pulse Test : Pulse width 300,Duty cycle 2%
2/5
Steady, keep you advance
SBW13009-
SBW13009-KK
3/5
Steady, keep you advance
SBW13009-
SBW13009-KK
4/5
Steady, keep you advance
SBW13009-
SBW13009-KK
To3P(B) Package Dimension
Unit :mm
5/5
Steady, keep you advance