TIP140/141/142

TIP140/141/142
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.)
Industrial Use
Complement to TIP145/146/147
1 TO-3P

NPN Epitaxial Silicon Darlington Transistor 1.Base 2.Collector 3.Emitter

Absolute Maximum Ratings TC=25C unless otherwise noted

Equivalent Circuit
Symbol Parameter Value Units C
VCBO Collector-Base Voltage : TIP140 60 V
: TIP141 80 V
: TIP142 100 V
B
VCEO Collector-Emitter Voltage : TIP140 60 V
: TIP141 80 V
: TIP142 100 V
VEBO Emitter-Base Voltage 5 V
R1 R2
IC Collector Current (DC) 10 A
ICP Collector Current (Pulse) 15 A R1 8k E
R2 0.12k
IB Base Current (DC) 0.5 A
PC Collector Dissipation (TC=25C) 125 W
TJ Junction Temperature 150 C
TSTG Storage Temperature - 65 ~ 150 C

Electrical Characteristics TC=25C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage
: TIP140 IC = 30mA, IB = 0 60 V
: TIP141 80 V
: TIP142 100 V
ICEO Collector Cut-off Current
: TIP140 VCE = 30V, IB = 0 2 mA
: TIP141 VCE = 40V, IB = 0 2 mA
: TIP142 VCE = 50V, IB = 0 2 mA
ICBO Collector Cut-off Current
: TIP140 VCB = 60V, IE = 0 1 mA
: TIP141 VCB = 80V, IE = 0 1 mA
: TIP142 VCB = 100V, IE = 0 1 mA
IEBO Emitter Cut-off Current VBE = 5V, IC = 0 2 mA
hFE DC Current Gain VCE = 4V, IC = 5A 1000
VCE = 4V, IC = 10A 500
VCE(sat) Collector-Emitter Saturation Voltage IC = 5A, IB = 10mA 2 V
IC = 10A, IB = 40mA 3 V
VBE(sat) Base-Emitter Saturation Voltage IC = 10A, IB = 40mA 3.5 V
VBE(on) Base-Emitter ON Voltage VCE = 4V, IC = 10A 3 V
tD Delay Time VCC = 30V, IC = 5A 0.15 s
tR Rise Time IB1 = 20mA, IB2 = -20mA 0.55 s
RL = 6
tSTG Storage Time 2.5 s
tF Fall Time 2.5 s

2000 Fairchild Semiconductor International Rev. A, February 2000

 TIP140/141/142
Typical Characteristics

10 100k
IB = 2000uA uA
1200 0u A
9 IB = 100 IB = 800uA
V CE = 4V
IB = 1800uA IB =
IC[A], COLLECTOR CURRENT

8
IB = 1600uA IB = 600uA
10k

hFE, DC CURRENT GAIN

7 IB = 1400uA
IB = 400uA
6

5 1k

4
IB = 200uA
3
100
2

0 10
0.1 1 10 100
0 1 2 3 4 5

V CE[V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

10 1000
IC =500IB f=0.1MHz
Cob[pF], CAPACITANCE

V BE(sat)
1

V CE(sat)
100

0.1

0.01 10
0.1 1 10 100 1 10 100 1000

IC[A], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance

Collector-Emitter Saturation Voltage

100 150

125
IC[A], COLLECTOR CURRENT

PC[W], POWER DISSIPATION

10 100
D
C

75

1 50
TIP140
TIP141
25
TIP142

0.1 0
1 10 100 1000
0 25 50 75 100 125 150 175

V CE [V], COLLECTOR-EMITTER VOLTAGE o

TC[ C], CASE TEMPERATURE

Figure 5. Safe Operating Area Figure 6. Power Derating

2000 Fairchild Semiconductor International Rev. A, February 2000

 TIP140/141/142
Package Demensions

TO-3P

15.60 0.20
4.80 0.20
13.60 0.20

3.80 0.20
3.20 0.10 +0.15
9.60 0.20 1.50 0.05

18.70 0.20
12.76 0.20

19.90 0.20

23.40 0.20
13.90 0.20

2.00 0.20
3.50 0.20

3.00 0.20
16.50 0.30

1.00 0.20 1.40 0.20

+0.15
0.60 0.05
5.45TYP 5.45TYP
[5.45 0.30] [5.45 0.30]

Dimensions in Millimeters

2000 Fairchild Semiconductor International Rev. A, February 2000

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Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
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2000 Fairchild Semiconductor International Rev. E